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A method of producing floating gate ROM comprises of: (1) supplying one lightly doped P- semiconductor substrate; (2) forming doped source and drain region in the substrate; (3) forming one tunnel oxide and field oxide on the substrate surface; (4) producing one PN junction floating gate from first polysilicon which includes one N doped area located on tunnel oxide, and at least one P doped area located on field oxide and next to N doped area; (5) forming one gate interlevel electrode insulator overlaying the PN floating gate; (6) producing one polysilicon control gate from second polysilicon, overlaying the gate interlevel electrode insulator; (7) forming another insulator overlaying the control gate.
TW85101926A1996-02-151996-02-15PN junction floating gate EEPROM and flash EPROM and fabrication process thereof
TW288209B
(en)