TW286416B - - Google Patents
Info
- Publication number
- TW286416B TW286416B TW84112720A TW84112720A TW286416B TW 286416 B TW286416 B TW 286416B TW 84112720 A TW84112720 A TW 84112720A TW 84112720 A TW84112720 A TW 84112720A TW 286416 B TW286416 B TW 286416B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16340394A JPH07335846A (ja) | 1994-06-11 | 1994-06-11 | Soi基板の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW286416B true TW286416B (ru) | 1996-09-21 |
Family
ID=15773237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW84112720A TW286416B (ru) | 1994-06-11 | 1995-11-29 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH07335846A (ru) |
TW (1) | TW286416B (ru) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106847739A (zh) * | 2015-12-04 | 2017-06-13 | 上海新微技术研发中心有限公司 | 一种绝缘体上硅材料的制造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10223497A (ja) * | 1997-01-31 | 1998-08-21 | Shin Etsu Handotai Co Ltd | 貼り合わせ基板の作製方法 |
US8633090B2 (en) | 2009-07-10 | 2014-01-21 | Shanghai Simgui Technology Co., Ltd. | Method for forming substrate with buried insulating layer |
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1994
- 1994-06-11 JP JP16340394A patent/JPH07335846A/ja active Pending
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1995
- 1995-11-29 TW TW84112720A patent/TW286416B/zh active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106847739A (zh) * | 2015-12-04 | 2017-06-13 | 上海新微技术研发中心有限公司 | 一种绝缘体上硅材料的制造方法 |
CN106847739B (zh) * | 2015-12-04 | 2018-08-31 | 上海新微技术研发中心有限公司 | 一种绝缘体上硅材料的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH07335846A (ja) | 1995-12-22 |