TW286416B - - Google Patents

Info

Publication number
TW286416B
TW286416B TW84112720A TW84112720A TW286416B TW 286416 B TW286416 B TW 286416B TW 84112720 A TW84112720 A TW 84112720A TW 84112720 A TW84112720 A TW 84112720A TW 286416 B TW286416 B TW 286416B
Authority
TW
Taiwan
Application number
TW84112720A
Other languages
Chinese (zh)
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Application granted granted Critical
Publication of TW286416B publication Critical patent/TW286416B/zh

Links

TW84112720A 1994-06-11 1995-11-29 TW286416B (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16340394A JPH07335846A (ja) 1994-06-11 1994-06-11 Soi基板の製造方法

Publications (1)

Publication Number Publication Date
TW286416B true TW286416B (ja) 1996-09-21

Family

ID=15773237

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84112720A TW286416B (ja) 1994-06-11 1995-11-29

Country Status (2)

Country Link
JP (1) JPH07335846A (ja)
TW (1) TW286416B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106847739A (zh) * 2015-12-04 2017-06-13 上海新微技术研发中心有限公司 一种绝缘体上硅材料的制造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10223497A (ja) * 1997-01-31 1998-08-21 Shin Etsu Handotai Co Ltd 貼り合わせ基板の作製方法
EP2461359B1 (en) 2009-07-10 2017-02-08 Shanghai Simgui Technology Co., Ltd Method for forming substrate with insulating buried layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106847739A (zh) * 2015-12-04 2017-06-13 上海新微技术研发中心有限公司 一种绝缘体上硅材料的制造方法
CN106847739B (zh) * 2015-12-04 2018-08-31 上海新微技术研发中心有限公司 一种绝缘体上硅材料的制造方法

Also Published As

Publication number Publication date
JPH07335846A (ja) 1995-12-22

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