TW285730B - - Google Patents

Info

Publication number
TW285730B
TW285730B TW084111797A TW84111797A TW285730B TW 285730 B TW285730 B TW 285730B TW 084111797 A TW084111797 A TW 084111797A TW 84111797 A TW84111797 A TW 84111797A TW 285730 B TW285730 B TW 285730B
Authority
TW
Taiwan
Application number
TW084111797A
Original Assignee
Samsung Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor Inc filed Critical Samsung Semiconductor Inc
Application granted granted Critical
Publication of TW285730B publication Critical patent/TW285730B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F5/00—Methods or arrangements for data conversion without changing the order or content of the data handled
    • G06F5/06—Methods or arrangements for data conversion without changing the order or content of the data handled for changing the speed of data flow, i.e. speed regularising or timing, e.g. delay lines, FIFO buffers; over- or underrun control therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Information Transfer Systems (AREA)
TW084111797A 1994-11-23 1995-11-07 TW285730B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/344,758 US5487049A (en) 1994-11-23 1994-11-23 Page-in, burst-out FIFO

Publications (1)

Publication Number Publication Date
TW285730B true TW285730B (zh) 1996-09-11

Family

ID=23351905

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084111797A TW285730B (zh) 1994-11-23 1995-11-07

Country Status (4)

Country Link
US (1) US5487049A (zh)
JP (1) JP2960342B2 (zh)
KR (1) KR0176422B1 (zh)
TW (1) TW285730B (zh)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3185568B2 (ja) * 1994-11-22 2001-07-11 日本電気株式会社 半導体記憶装置
US6525971B2 (en) 1995-06-30 2003-02-25 Micron Technology, Inc. Distributed write data drivers for burst access memories
US5526320A (en) 1994-12-23 1996-06-11 Micron Technology Inc. Burst EDO memory device
US5640364A (en) * 1994-12-23 1997-06-17 Micron Technology, Inc. Self-enabling pulse trapping circuit
US5682354A (en) * 1995-11-06 1997-10-28 Micron Technology, Inc. CAS recognition in burst extended data out DRAM
US5610864A (en) 1994-12-23 1997-03-11 Micron Technology, Inc. Burst EDO memory device with maximized write cycle timing
TW388982B (en) * 1995-03-31 2000-05-01 Samsung Electronics Co Ltd Memory controller which executes read and write commands out of order
US5638534A (en) * 1995-03-31 1997-06-10 Samsung Electronics Co., Ltd. Memory controller which executes read and write commands out of order
US5666494A (en) * 1995-03-31 1997-09-09 Samsung Electronics Co., Ltd. Queue management mechanism which allows entries to be processed in any order
KR0156969B1 (ko) * 1995-05-15 1998-12-01 김주용 버스트 페이지 억세스 장치
US5555214A (en) 1995-11-08 1996-09-10 Altera Corporation Apparatus for serial reading and writing of random access memory arrays
US5712992A (en) * 1995-12-06 1998-01-27 Cypress Semiconductor Corporation State machine design for generating empty and full flags in an asynchronous FIFO
US5729504A (en) * 1995-12-14 1998-03-17 Micron Technology, Inc. Continuous burst edo memory device
US5963056A (en) * 1995-12-14 1999-10-05 Cypress Semiconductor Corp. Full and empty flag generator for synchronous FIFOs
US5844423A (en) * 1995-12-14 1998-12-01 Cypress Semiconductor Corporation Half-full flag generator for synchronous FIFOs
US5850568A (en) * 1995-12-22 1998-12-15 Cypress Semiconductor Corporation Circuit having plurality of carry/sum adders having read count, write count, and offset inputs to generate an output flag in response to FIFO fullness
US7681005B1 (en) 1996-01-11 2010-03-16 Micron Technology, Inc. Asynchronously-accessible memory device with mode selection circuitry for burst or pipelined operation
US5748559A (en) * 1996-01-17 1998-05-05 Cypress Semiconductor Corporation Circuit for high speed serial programming of programmable logic devices
US5661418A (en) * 1996-03-13 1997-08-26 Cypress Semiconductor Corp. Signal generation decoder circuit and method
US6401186B1 (en) 1996-07-03 2002-06-04 Micron Technology, Inc. Continuous burst memory which anticipates a next requested start address
US6981126B1 (en) * 1996-07-03 2005-12-27 Micron Technology, Inc. Continuous interleave burst access
US5940848A (en) * 1997-01-14 1999-08-17 Intel Corporation Computer system and method for efficiently controlling the opening and closing of pages for an aborted row on page miss cycle
US6167499A (en) * 1997-05-20 2000-12-26 Vlsi Technology, Inc. Memory space compression technique for a sequentially accessible memory
US5982700A (en) * 1998-05-21 1999-11-09 Integrated Device Technology, Inc. Buffer memory arrays having nonlinear columns for providing parallel data access capability and methods of operating same
US5999478A (en) * 1998-05-21 1999-12-07 Integrated Device Technology, Inc. Highly integrated tri-port memory buffers having fast fall-through capability and methods of operating same
US6216205B1 (en) 1998-05-21 2001-04-10 Integrated Device Technology, Inc. Methods of controlling memory buffers having tri-port cache arrays therein
US5978307A (en) * 1998-05-21 1999-11-02 Integrated Device Technology, Inc. Integrated circuit memory devices having partitioned multi-port memory arrays therein for increasing data bandwidth and methods of operating same
US6026032A (en) * 1998-08-31 2000-02-15 Genroco, Inc. High speed data buffer using a virtual first-in-first-out register
EP1026595B1 (en) * 1999-01-11 2008-07-23 STMicroelectronics Limited Memory interface device and method for accessing memories
US6732223B1 (en) * 2000-04-03 2004-05-04 Micron Technology, Inc. Method and apparatus for address FIFO for high-bandwidth command/address busses in digital storage system
DE10050980A1 (de) * 2000-10-13 2002-05-02 Systemonic Ag Speicherkonfiguration mit I/O-Unterstützung
US6445635B1 (en) * 2001-06-30 2002-09-03 Cypress Semiconductor Corporation High speed asynchronous and programmable state machine for generating almost empty synchronous flags in a synchronous FIFO
US20050188125A1 (en) * 2004-02-20 2005-08-25 Lim Ricardo T. Method and apparatus for burst mode data transfers between a CPU and a FIFO
DE602005002774D1 (de) * 2004-04-08 2007-11-22 St Microelectronics Pvt Ltd Ein verbesserter on-chip Speicher zur Speicherung von variablen Datenbits
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7893772B1 (en) 2007-12-03 2011-02-22 Cypress Semiconductor Corporation System and method of loading a programmable counter

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1286421C (en) * 1987-10-14 1991-07-16 Martin Claude Lefebvre Message fifo buffer controller
US5267191A (en) * 1989-04-03 1993-11-30 Ncr Corporation FIFO memory system
JPH0478843U (zh) * 1990-11-19 1992-07-09
US5274600A (en) * 1990-12-13 1993-12-28 Texas Instruments Incorporated First-in first-out memory
JPH05165714A (ja) * 1991-12-18 1993-07-02 Matsushita Electric Ind Co Ltd データ転送装置
JPH05324452A (ja) * 1992-05-27 1993-12-07 Nec Ic Microcomput Syst Ltd 外部メモリインタフェース回路

Also Published As

Publication number Publication date
KR960018931A (ko) 1996-06-17
JPH08255475A (ja) 1996-10-01
JP2960342B2 (ja) 1999-10-06
US5487049A (en) 1996-01-23
KR0176422B1 (ko) 1999-05-15

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees