TW283789B - - Google Patents
Info
- Publication number
- TW283789B TW283789B TW084103793A TW84103793A TW283789B TW 283789 B TW283789 B TW 283789B TW 084103793 A TW084103793 A TW 084103793A TW 84103793 A TW84103793 A TW 84103793A TW 283789 B TW283789 B TW 283789B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
- H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6098548A JPH07307386A (ja) | 1994-05-12 | 1994-05-12 | 半導体集積回路装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW283789B true TW283789B (ca) | 1996-08-21 |
Family
ID=14222749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084103793A TW283789B (ca) | 1994-05-12 | 1995-04-18 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH07307386A (ca) |
| KR (1) | KR950034685A (ca) |
| CN (1) | CN1123956A (ca) |
| TW (1) | TW283789B (ca) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100328709B1 (ko) * | 1999-07-07 | 2002-03-20 | 박종섭 | 프로그래밍 부위 형성방법 |
| US7271076B2 (en) * | 2003-12-19 | 2007-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device |
| CN101562151B (zh) * | 2008-04-15 | 2012-04-18 | 和舰科技(苏州)有限公司 | 具有金属硅化物的半导体结构及形成金属硅化物的方法 |
-
1994
- 1994-05-12 JP JP6098548A patent/JPH07307386A/ja active Pending
-
1995
- 1995-04-18 TW TW084103793A patent/TW283789B/zh active
- 1995-04-24 KR KR1019950009647A patent/KR950034685A/ko not_active Withdrawn
- 1995-05-12 CN CN95106069A patent/CN1123956A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07307386A (ja) | 1995-11-21 |
| KR950034685A (ko) | 1995-12-28 |
| CN1123956A (zh) | 1996-06-05 |