TW270233B - - Google Patents
Info
- Publication number
- TW270233B TW270233B TW084104516A TW84104516A TW270233B TW 270233 B TW270233 B TW 270233B TW 084104516 A TW084104516 A TW 084104516A TW 84104516 A TW84104516 A TW 84104516A TW 270233 B TW270233 B TW 270233B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6046674A JPH07263674A (ja) | 1994-03-17 | 1994-03-17 | 電界効果型半導体装置とその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW270233B true TW270233B (hu) | 1996-02-11 |
Family
ID=12753928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084104516A TW270233B (hu) | 1994-03-17 | 1995-05-06 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH07263674A (hu) |
| KR (1) | KR0185461B1 (hu) |
| TW (1) | TW270233B (hu) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5958508A (en) * | 1997-03-31 | 1999-09-28 | Motorlola, Inc. | Process for forming a semiconductor device |
| JPH10308454A (ja) * | 1997-05-02 | 1998-11-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US6284636B1 (en) | 2000-01-21 | 2001-09-04 | Advanced Micro Devices, Inc. | Tungsten gate method and apparatus |
| US6277744B1 (en) | 2000-01-21 | 2001-08-21 | Advanced Micro Devices, Inc. | Two-level silane nucleation for blanket tungsten deposition |
| US6274472B1 (en) | 2000-01-21 | 2001-08-14 | Advanced Micro Devices, Inc. | Tungsten interconnect method |
| KR100745604B1 (ko) * | 2006-07-03 | 2007-08-02 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
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1994
- 1994-03-17 JP JP6046674A patent/JPH07263674A/ja not_active Withdrawn
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1995
- 1995-03-11 KR KR1019950005041A patent/KR0185461B1/ko not_active IP Right Cessation
- 1995-05-06 TW TW084104516A patent/TW270233B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR0185461B1 (ko) | 1999-03-20 |
| JPH07263674A (ja) | 1995-10-13 |
| KR950028175A (ko) | 1995-10-18 |