TW256940B - Thin film transistor and process thereof - Google Patents

Thin film transistor and process thereof

Info

Publication number
TW256940B
TW256940B TW83108410A TW83108410A TW256940B TW 256940 B TW256940 B TW 256940B TW 83108410 A TW83108410 A TW 83108410A TW 83108410 A TW83108410 A TW 83108410A TW 256940 B TW256940 B TW 256940B
Authority
TW
Taiwan
Prior art keywords
dielectric layer
electrode area
gate dielectric
thin film
film transistor
Prior art date
Application number
TW83108410A
Other languages
English (en)
Inventor
Jiing-Shin Yeh
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW83108410A priority Critical patent/TW256940B/zh
Application granted granted Critical
Publication of TW256940B publication Critical patent/TW256940B/zh

Links

Landscapes

  • Thin Film Transistor (AREA)
TW83108410A 1994-09-12 1994-09-12 Thin film transistor and process thereof TW256940B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83108410A TW256940B (en) 1994-09-12 1994-09-12 Thin film transistor and process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83108410A TW256940B (en) 1994-09-12 1994-09-12 Thin film transistor and process thereof

Publications (1)

Publication Number Publication Date
TW256940B true TW256940B (en) 1995-09-11

Family

ID=51401682

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83108410A TW256940B (en) 1994-09-12 1994-09-12 Thin film transistor and process thereof

Country Status (1)

Country Link
TW (1) TW256940B (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7557407B2 (en) 2006-03-15 2009-07-07 Promos Technologies Inc. Recessed gate structure and method for preparing the same
US7622352B2 (en) 2006-03-15 2009-11-24 Promos Technologies Inc. Multi-step gate structure and method for preparing the same
TWI478286B (zh) * 2008-02-20 2015-03-21 Magnachip Semiconductor Ltd 反熔絲及其形成方法和具有其之非揮發性記憶體裝置之單位單元
TWI691089B (zh) * 2017-12-15 2020-04-11 南韓商Ｌｇ顯示器股份有限公司 薄膜電晶體、製造該薄膜電晶體的方法及包含該薄膜電晶體的顯示裝置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7557407B2 (en) 2006-03-15 2009-07-07 Promos Technologies Inc. Recessed gate structure and method for preparing the same
US7622352B2 (en) 2006-03-15 2009-11-24 Promos Technologies Inc. Multi-step gate structure and method for preparing the same
TWI478286B (zh) * 2008-02-20 2015-03-21 Magnachip Semiconductor Ltd 反熔絲及其形成方法和具有其之非揮發性記憶體裝置之單位單元
TWI691089B (zh) * 2017-12-15 2020-04-11 南韓商Ｌｇ顯示器股份有限公司 薄膜電晶體、製造該薄膜電晶體的方法及包含該薄膜電晶體的顯示裝置
US10693015B2 (en) 2017-12-15 2020-06-23 Lg Display Co., Ltd. Thin film transistor, method for manufacturing the same and display device comprising the same

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