TW253069B - Process of CMOS device - Google Patents

Process of CMOS device

Info

Publication number
TW253069B
TW253069B TW83104651A TW83104651A TW253069B TW 253069 B TW253069 B TW 253069B TW 83104651 A TW83104651 A TW 83104651A TW 83104651 A TW83104651 A TW 83104651A TW 253069 B TW253069 B TW 253069B
Authority
TW
Taiwan
Prior art keywords
drain
type well
substrate
cmos device
area
Prior art date
Application number
TW83104651A
Other languages
Chinese (zh)
Inventor
Wen-Yueh Chang
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Priority to TW83104651A priority Critical patent/TW253069B/en
Application granted granted Critical
Publication of TW253069B publication Critical patent/TW253069B/en

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A CMOS device includes: - Si substrate; - P-type well formed in the substrate; - N-type well formed in the substrate; - PMOS device with P+ source area and P+ drain area formed in the N-type well; - NMOS device with N+ source area and N+ drain area formed in the P-type well; - guard ring formed in one of the well areas, located between the drain of the PMOS device and the drain of the NMOS device, and the guard ring with a junction depth larger than the source and the drain's, and collecting the base current of parasitic bipolar junction transistor formed in the CMOS device.
TW83104651A 1994-05-23 1994-05-23 Process of CMOS device TW253069B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83104651A TW253069B (en) 1994-05-23 1994-05-23 Process of CMOS device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83104651A TW253069B (en) 1994-05-23 1994-05-23 Process of CMOS device

Publications (1)

Publication Number Publication Date
TW253069B true TW253069B (en) 1995-08-01

Family

ID=51401482

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83104651A TW253069B (en) 1994-05-23 1994-05-23 Process of CMOS device

Country Status (1)

Country Link
TW (1) TW253069B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7564423B2 (en) 2005-06-03 2009-07-21 Hon Hai Precision Ind. Co., Ltd. Printed dipole antenna
TWI652821B (en) 2016-08-31 2019-03-01 創意電子股份有限公司 Gate-bounded silicon controlled rectifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7564423B2 (en) 2005-06-03 2009-07-21 Hon Hai Precision Ind. Co., Ltd. Printed dipole antenna
TWI652821B (en) 2016-08-31 2019-03-01 創意電子股份有限公司 Gate-bounded silicon controlled rectifier

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