TW253069B - Process of CMOS device - Google Patents
Process of CMOS deviceInfo
- Publication number
- TW253069B TW253069B TW83104651A TW83104651A TW253069B TW 253069 B TW253069 B TW 253069B TW 83104651 A TW83104651 A TW 83104651A TW 83104651 A TW83104651 A TW 83104651A TW 253069 B TW253069 B TW 253069B
- Authority
- TW
- Taiwan
- Prior art keywords
- drain
- type well
- substrate
- cmos device
- area
- Prior art date
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
A CMOS device includes: - Si substrate; - P-type well formed in the substrate; - N-type well formed in the substrate; - PMOS device with P+ source area and P+ drain area formed in the N-type well; - NMOS device with N+ source area and N+ drain area formed in the P-type well; - guard ring formed in one of the well areas, located between the drain of the PMOS device and the drain of the NMOS device, and the guard ring with a junction depth larger than the source and the drain's, and collecting the base current of parasitic bipolar junction transistor formed in the CMOS device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW83104651A TW253069B (en) | 1994-05-23 | 1994-05-23 | Process of CMOS device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW83104651A TW253069B (en) | 1994-05-23 | 1994-05-23 | Process of CMOS device |
Publications (1)
Publication Number | Publication Date |
---|---|
TW253069B true TW253069B (en) | 1995-08-01 |
Family
ID=51401482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW83104651A TW253069B (en) | 1994-05-23 | 1994-05-23 | Process of CMOS device |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW253069B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7564423B2 (en) | 2005-06-03 | 2009-07-21 | Hon Hai Precision Ind. Co., Ltd. | Printed dipole antenna |
TWI652821B (en) | 2016-08-31 | 2019-03-01 | 創意電子股份有限公司 | Gate-bounded silicon controlled rectifier |
-
1994
- 1994-05-23 TW TW83104651A patent/TW253069B/en active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7564423B2 (en) | 2005-06-03 | 2009-07-21 | Hon Hai Precision Ind. Co., Ltd. | Printed dipole antenna |
TWI652821B (en) | 2016-08-31 | 2019-03-01 | 創意電子股份有限公司 | Gate-bounded silicon controlled rectifier |
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