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Internal Circuitry In Semiconductor Integrated Circuit Devices
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Abstract
A fabricating method for crystal containing Mo/N diffusion barrier layer includes: 1. supplying one Si chip as substrate with outer lead bump; 2. forming one first metal pad on the outer lead bump; 3. with Mo as the target, then plating it on the first metal pad; 4. controlling power and divided pressure in plating way to form one Mo2N coating layer on the first metal pad; 5. plating the second metal pad on Mo2N layer to prevent it from diffusing with the first metal pad layer under it and influencing its conducting function.
TW83103374A1994-04-151994-04-15Fabricating method for crystal
TW243548B
(en)