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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW83108500ApriorityCriticalpatent/TW238412B/en
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Publication of TW238412BpublicationCriticalpatent/TW238412B/en
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
(AREA)
Abstract
A process for forming the N-well and P-well of semiconductor in which the dopant quantum in N-well is larger than that of P-well, includes: 1. selectively implanting N-ion to one destined N-well to form one N-well; 2. blanket implanting the P-ion to the N-well and the destined P-well to form the N-well and P-well.
TW83108500A1994-09-141994-09-14Process for semiconductor
TW238412B
(en)
Insecticidal compositions for controlling scarabid larvae,containing bacterial spored of milky disease bacillus free of sporangia,and in vitro method for producing such spores