TW233378B - - Google Patents

Info

Publication number
TW233378B
TW233378B TW082100865A TW82100865A TW233378B TW 233378 B TW233378 B TW 233378B TW 082100865 A TW082100865 A TW 082100865A TW 82100865 A TW82100865 A TW 82100865A TW 233378 B TW233378 B TW 233378B
Authority
TW
Taiwan
Application number
TW082100865A
Other languages
Chinese (zh)
Original Assignee
Canon Kk
Omi Tadahiro
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk, Omi Tadahiro filed Critical Canon Kk
Application granted granted Critical
Publication of TW233378B publication Critical patent/TW233378B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW082100865A 1992-02-10 1993-02-09 TW233378B (fi)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5752692 1992-02-10
JP4233083A JPH05303209A (ja) 1992-02-10 1992-08-07 リソグラフィ工程
JP4233081A JPH05308048A (ja) 1992-02-10 1992-08-07 リソグラフィ工程

Publications (1)

Publication Number Publication Date
TW233378B true TW233378B (fi) 1994-11-01

Family

ID=13058195

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082100865A TW233378B (fi) 1992-02-10 1993-02-09

Country Status (4)

Country Link
JP (2) JPH05308048A (fi)
KR (1) KR0123931B1 (fi)
MY (1) MY119984A (fi)
TW (1) TW233378B (fi)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4564186B2 (ja) * 2001-02-16 2010-10-20 株式会社東芝 パターン形成方法
KR100680401B1 (ko) * 2004-07-02 2007-02-08 주식회사 하이닉스반도체 이머젼 리소그래피용 액체 조성물 및 이를 이용한리소그래피 방법
JP2007150102A (ja) * 2005-11-29 2007-06-14 Fujitsu Ltd 露光装置及び光学素子の洗浄方法
WO2009150913A1 (ja) * 2008-06-12 2009-12-17 株式会社ニコン 照明装置、露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
JPH05303209A (ja) 1993-11-16
JPH05308048A (ja) 1993-11-19
KR0123931B1 (ko) 1997-11-20
MY119984A (en) 2005-08-30
KR930018679A (ko) 1993-09-22

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent