TW233370B - - Google Patents

Info

Publication number
TW233370B
TW233370B TW082110061A TW82110061A TW233370B TW 233370 B TW233370 B TW 233370B TW 082110061 A TW082110061 A TW 082110061A TW 82110061 A TW82110061 A TW 82110061A TW 233370 B TW233370 B TW 233370B
Authority
TW
Taiwan
Application number
TW082110061A
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Application granted granted Critical
Publication of TW233370B publication Critical patent/TW233370B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
    • G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
    • G05B13/0265—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric the criterion being a learning criterion
    • G05B13/027—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric the criterion being a learning criterion using neural networks only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Artificial Intelligence (AREA)
  • Evolutionary Computation (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Software Systems (AREA)
  • Automation & Control Theory (AREA)
  • Medical Informatics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Health & Medical Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Databases & Information Systems (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Drying Of Semiconductors (AREA)
TW082110061A 1992-12-14 1993-11-29 TW233370B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US99030892A 1992-12-14 1992-12-14
US08/150,261 US5467883A (en) 1992-12-14 1993-11-17 Active neural network control of wafer attributes in a plasma etch process

Publications (1)

Publication Number Publication Date
TW233370B true TW233370B (zh) 1994-11-01

Family

ID=46248235

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082110061A TW233370B (zh) 1992-12-14 1993-11-29

Country Status (3)

Country Link
US (1) US5467883A (zh)
KR (1) KR100288456B1 (zh)
TW (1) TW233370B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI487000B (zh) * 2007-08-10 2015-06-01 Quantum Global Tech Llc 電子裝置製程構件之非即時調節的方法與設備

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE163777T1 (de) * 1990-10-10 1998-03-15 Honeywell Inc Identifizierung eines prozesssystems
US5841651A (en) * 1992-11-09 1998-11-24 The United States Of America As Represented By The United States Department Of Energy Closed loop adaptive control of spectrum-producing step using neural networks
US6157900A (en) * 1994-10-19 2000-12-05 Intellisense Corp. Knowledge based system and method for determining material properties from fabrication and operating parameters
US5711843A (en) * 1995-02-21 1998-01-27 Orincon Technologies, Inc. System for indirectly monitoring and controlling a process with particular application to plasma processes
US5780315A (en) * 1995-09-11 1998-07-14 Taiwan Semiconductor Manufacturing Company, Ltd Dry etch endpoint method
US5654903A (en) * 1995-11-07 1997-08-05 Lucent Technologies Inc. Method and apparatus for real time monitoring of wafer attributes in a plasma etch process
US5658423A (en) * 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
US5681486A (en) * 1996-02-23 1997-10-28 The Boeing Company Plasma descaling of titanium and titanium alloys
US6649075B1 (en) 1996-07-23 2003-11-18 Applied Materials, Inc. Method and apparatus for measuring etch uniformity of a semiconductor wafer
US5871658A (en) * 1997-01-13 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Optical emisson spectroscopy (OES) method for monitoring and controlling plasma etch process when forming patterned layers
DE19737244A1 (de) * 1997-08-27 1999-03-04 Harald Tobies Vorrichtung und Verfahren zur Regelung der Phasenlage von Hochfrequenzelektroden bei Plasmaprozessen
US6129807A (en) 1997-10-06 2000-10-10 Applied Materials, Inc. Apparatus for monitoring processing of a substrate
US6153115A (en) * 1997-10-23 2000-11-28 Massachusetts Institute Of Technology Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra
US6169933B1 (en) 1998-04-23 2001-01-02 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6134005A (en) * 1998-04-23 2000-10-17 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6090302A (en) * 1998-04-23 2000-07-18 Sandia Method and apparatus for monitoring plasma processing operations
US6221679B1 (en) * 1998-04-23 2001-04-24 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6165312A (en) * 1998-04-23 2000-12-26 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6132577A (en) * 1998-04-23 2000-10-17 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6157447A (en) * 1998-04-23 2000-12-05 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6077386A (en) * 1998-04-23 2000-06-20 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6269278B1 (en) 1998-04-23 2001-07-31 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6192826B1 (en) * 1998-04-23 2001-02-27 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6254717B1 (en) 1998-04-23 2001-07-03 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6261470B1 (en) 1998-04-23 2001-07-17 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6223755B1 (en) 1998-04-23 2001-05-01 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6123983A (en) * 1998-04-23 2000-09-26 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6275740B1 (en) 1998-04-23 2001-08-14 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6419801B1 (en) 1998-04-23 2002-07-16 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6246473B1 (en) 1998-04-23 2001-06-12 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
US5964980A (en) * 1998-06-23 1999-10-12 Vlsi Technology, Inc. Fitted endpoint system
EP1125314A1 (en) 1998-07-10 2001-08-22 Applied Materials, Inc. Improved endpoint detection for substrate fabrication processes
US6077387A (en) * 1999-02-10 2000-06-20 Stmicroelectronics, Inc. Plasma emission detection for process control via fluorescent relay
US6238937B1 (en) * 1999-09-08 2001-05-29 Advanced Micro Devices, Inc. Determining endpoint in etching processes using principal components analysis of optical emission spectra with thresholding
US6401082B1 (en) * 1999-11-08 2002-06-04 The United States Of America As Represented By The Secretary Of The Air Force Autoassociative-heteroassociative neural network
TW452884B (en) * 1999-12-29 2001-09-01 Winbond Electronics Corp Frequency modulated endpoint detecting method and manufacturing apparatus for applying the method
US6567717B2 (en) * 2000-01-19 2003-05-20 Advanced Micro Devices, Inc. Feed-forward control of TCI doping for improving mass-production-wise, statistical distribution of critical performance parameters in semiconductor devices
JP3634734B2 (ja) 2000-09-22 2005-03-30 株式会社日立製作所 プラズマ処理装置および処理方法
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
KR100375559B1 (ko) * 2001-07-03 2003-03-10 삼성전자주식회사 공정장치의 제어방법
US6616759B2 (en) * 2001-09-06 2003-09-09 Hitachi, Ltd. Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor
WO2003025689A2 (en) * 2001-09-14 2003-03-27 Ibex Process Technology, Inc. Large scale process control by driving factor identification
AU2002364140A1 (en) * 2001-12-31 2003-07-24 Tokyo Electron Limited Method of detecting, identifying and correcting process performance
US6718221B1 (en) 2002-05-21 2004-04-06 University Of Kentucky Research Foundation Nonparametric control chart for the range
US20030236759A1 (en) * 2002-06-21 2003-12-25 Tsung-Hsuan Ho Neural network for determining the endpoint in a process
US20040019470A1 (en) * 2002-07-19 2004-01-29 Ibex Process Technology, Inc. Control of complex manufacturing processes using continuous process data
US20040076944A1 (en) * 2002-08-22 2004-04-22 Ibex Process Technology, Inc. Supervised learning in the presence of null data
US6915173B2 (en) * 2002-08-22 2005-07-05 Ibex Process Technology, Inc. Advance failure prediction
US6970857B2 (en) * 2002-09-05 2005-11-29 Ibex Process Technology, Inc. Intelligent control for process optimization and parts maintenance
TWI264043B (en) * 2002-10-01 2006-10-11 Tokyo Electron Ltd Method and system for analyzing data from a plasma process
DE10260614B4 (de) * 2002-12-23 2008-01-31 Advanced Micro Devices, Inc., Sunnyvale Plasmaparametersteuerung unter Verwendung von Lerndaten
US7020569B2 (en) * 2003-03-13 2006-03-28 Ibex Process Technology, Inc. Intelligent modelling of process and tool health
US6980875B1 (en) 2003-05-21 2005-12-27 University Of Kentucky Research Foundation Nonparametric control chart for the range
US7092922B2 (en) * 2003-05-23 2006-08-15 Computer Associates Think, Inc. Adaptive learning enhancement to automated model maintenance
US8639365B2 (en) * 2003-11-10 2014-01-28 Brooks Automation, Inc. Methods and systems for controlling a semiconductor fabrication process
US20070282480A1 (en) * 2003-11-10 2007-12-06 Pannese Patrick D Methods and systems for controlling a semiconductor fabrication process
US8639489B2 (en) * 2003-11-10 2014-01-28 Brooks Automation, Inc. Methods and systems for controlling a semiconductor fabrication process
US20050220984A1 (en) * 2004-04-02 2005-10-06 Applied Materials Inc., A Delaware Corporation Method and system for control of processing conditions in plasma processing systems
US20060036345A1 (en) * 2004-08-09 2006-02-16 An Cao Systems and method for lights-out manufacturing
US7625824B2 (en) * 2005-06-16 2009-12-01 Oerlikon Usa, Inc. Process change detection through the use of evolutionary algorithms
TWI380144B (en) * 2008-04-09 2012-12-21 Inotera Memories Inc Method of fuzzy control for semiconductor machine
US8828259B2 (en) * 2011-07-07 2014-09-09 Lam Research Corporation Methods for automatically determining capacitor values and systems thereof
US20130026136A1 (en) * 2011-07-29 2013-01-31 Qualcomm Mems Technologies, Inc. Sputter-etch tool and liners
US20150301510A1 (en) * 2014-04-22 2015-10-22 Siegmund Düll Controlling a Target System
US10001760B1 (en) * 2014-09-30 2018-06-19 Hrl Laboratories, Llc Adaptive control system capable of recovering from unexpected situations
KR20190048491A (ko) 2017-10-31 2019-05-09 삼성전자주식회사 식각 효과 예측 방법 및 입력 파라미터 결정 방법
KR102527605B1 (ko) * 2017-10-31 2023-05-02 한국전자기술연구원 다중 아날로그 제어 변수 생성을 위한 다중 뉴럴 네트워크 구성 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286947A (en) * 1992-09-08 1994-02-15 General Electric Company Apparatus and method for monitoring material removal from a workpiece

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI487000B (zh) * 2007-08-10 2015-06-01 Quantum Global Tech Llc 電子裝置製程構件之非即時調節的方法與設備

Also Published As

Publication number Publication date
KR100288456B1 (ko) 2001-05-02
KR940015894A (ko) 1994-07-22
US5467883A (en) 1995-11-21

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