TW231386B - - Google Patents

Info

Publication number
TW231386B
TW231386B TW082102814A TW82102814A TW231386B TW 231386 B TW231386 B TW 231386B TW 082102814 A TW082102814 A TW 082102814A TW 82102814 A TW82102814 A TW 82102814A TW 231386 B TW231386 B TW 231386B
Authority
TW
Taiwan
Application number
TW082102814A
Other languages
Chinese (zh)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW231386B publication Critical patent/TW231386B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
TW082102814A 1991-11-27 1993-04-14 TW231386B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79951591A 1991-11-27 1991-11-27

Publications (1)

Publication Number Publication Date
TW231386B true TW231386B (enExample) 1994-10-01

Family

ID=25176116

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082102814A TW231386B (enExample) 1991-11-27 1993-04-14

Country Status (3)

Country Link
EP (1) EP0544247A3 (enExample)
JP (1) JPH05274871A (enExample)
TW (1) TW231386B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5537346A (en) * 1994-05-20 1996-07-16 Samsung Electronics Co., Ltd. Semiconductor memory device obtaining high bandwidth and signal line layout method thereof
KR0164391B1 (ko) * 1995-06-29 1999-02-18 김광호 고속동작을 위한 회로 배치 구조를 가지는 반도체 메모리 장치
US5995404A (en) * 1996-07-11 1999-11-30 Texas Instruments Incorporated DRAM architecture with aligned data storage and bond pads
CN102497832B (zh) 2009-09-08 2015-09-09 显著外科技术公司 用于电外科装置、电外科器械的盒组件及其使用方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4656613A (en) * 1984-08-29 1987-04-07 Texas Instruments Incorporated Semiconductor dynamic memory device with decoded active loads
DE69129882T2 (de) * 1990-06-19 1999-03-04 Texas Instruments Inc., Dallas, Tex. Assoziatives DRAM-Redundanzschema mit variabler Satzgrösse

Also Published As

Publication number Publication date
EP0544247A2 (en) 1993-06-02
JPH05274871A (ja) 1993-10-22
EP0544247A3 (en) 1993-10-20

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