TW230278B - - Google Patents
Info
- Publication number
- TW230278B TW230278B TW081109345A TW81109345A TW230278B TW 230278 B TW230278 B TW 230278B TW 081109345 A TW081109345 A TW 081109345A TW 81109345 A TW81109345 A TW 81109345A TW 230278 B TW230278 B TW 230278B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP91203087 | 1991-11-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW230278B true TW230278B (en, 2012) | 1994-09-11 |
Family
ID=8208035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081109345A TW230278B (en, 2012) | 1991-11-26 | 1992-11-23 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5299216A (en, 2012) |
| EP (1) | EP0544357B1 (en, 2012) |
| JP (1) | JPH05267797A (en, 2012) |
| DE (1) | DE69213403T2 (en, 2012) |
| TW (1) | TW230278B (en, 2012) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5723871A (en) * | 1991-05-02 | 1998-03-03 | Daido Tokushuko Kabushiki Kaisha | Process of emitting highly spin-polarized electron beam and semiconductor device therefor |
| JPH08279650A (ja) * | 1995-04-06 | 1996-10-22 | Mitsubishi Electric Corp | 半導体レーザ装置、及び半導体レーザ装置の製造方法 |
| JP3195194B2 (ja) * | 1995-05-26 | 2001-08-06 | シャープ株式会社 | 半導体発光素子およびその製造方法 |
| EP0829100A1 (en) * | 1996-03-28 | 1998-03-18 | Koninklijke Philips Electronics N.V. | Radiation-emitting semiconductor diode having a separate confinement layer comprising a semiconductor material with at most 30 % aluminum or a semiconductor material free of aluminum |
| JPH10335742A (ja) * | 1997-06-04 | 1998-12-18 | Toshiba Corp | 半導体レーザ装置 |
| JP4024471B2 (ja) * | 2000-11-20 | 2007-12-19 | 株式会社東芝 | 面発光型半導体レーザ |
| US7812249B2 (en) * | 2003-04-14 | 2010-10-12 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4122407A (en) * | 1976-04-06 | 1978-10-24 | International Business Machines Corporation | Heterostructure junction light emitting or responding or modulating devices |
| US4694311A (en) * | 1985-05-22 | 1987-09-15 | Trw Inc. | Planar light-emitting diode |
| US4747108A (en) * | 1986-06-30 | 1988-05-24 | General Motors Corporation | Lead-europium-selenide-telluride diode laser |
| JP2544378B2 (ja) * | 1987-03-25 | 1996-10-16 | 株式会社日立製作所 | 光半導体装置 |
| EP0325275B1 (en) * | 1988-01-20 | 1994-09-07 | Nec Corporation | A visible light semiconductor laser with (AlxGa1-x)0.5In0.5P crystal layers and a process for growing an (AlxGa1-x)0.5In0.5P crystal |
| US5016252A (en) * | 1988-09-29 | 1991-05-14 | Sanyo Electric Co., Ltd. | Semiconductor laser device |
| JPH0422185A (ja) * | 1990-05-17 | 1992-01-27 | Mitsubishi Electric Corp | 半導体光素子 |
| EP0503211B1 (en) * | 1991-03-11 | 1994-06-01 | International Business Machines Corporation | Semiconductor device comprising a layered structure grown on a structured substrate |
-
1992
- 1992-11-18 EP EP92203545A patent/EP0544357B1/en not_active Expired - Lifetime
- 1992-11-18 DE DE69213403T patent/DE69213403T2/de not_active Expired - Fee Related
- 1992-11-23 TW TW081109345A patent/TW230278B/zh active
- 1992-11-25 JP JP33800592A patent/JPH05267797A/ja active Pending
- 1992-11-25 US US07/982,216 patent/US5299216A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69213403T2 (de) | 1997-03-20 |
| EP0544357B1 (en) | 1996-09-04 |
| DE69213403D1 (de) | 1996-10-10 |
| US5299216A (en) | 1994-03-29 |
| EP0544357A1 (en) | 1993-06-02 |
| JPH05267797A (ja) | 1993-10-15 |