TW230266B - - Google Patents
Info
- Publication number
- TW230266B TW230266B TW082110302A TW82110302A TW230266B TW 230266 B TW230266 B TW 230266B TW 082110302 A TW082110302 A TW 082110302A TW 82110302 A TW82110302 A TW 82110302A TW 230266 B TW230266 B TW 230266B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H10W20/066—
-
- H10D64/0112—
-
- H10D64/0113—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98721393A | 1993-01-26 | 1993-01-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW230266B true TW230266B (cg-RX-API-DMAC10.html) | 1994-09-11 |
Family
ID=25533110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW082110302A TW230266B (cg-RX-API-DMAC10.html) | 1993-01-26 | 1993-12-06 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5654240A (cg-RX-API-DMAC10.html) |
| EP (1) | EP0609014B1 (cg-RX-API-DMAC10.html) |
| JP (1) | JPH06318682A (cg-RX-API-DMAC10.html) |
| KR (1) | KR100311059B1 (cg-RX-API-DMAC10.html) |
| DE (1) | DE69413861T2 (cg-RX-API-DMAC10.html) |
| ES (1) | ES2122158T3 (cg-RX-API-DMAC10.html) |
| TW (1) | TW230266B (cg-RX-API-DMAC10.html) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5843815A (en) * | 1997-01-15 | 1998-12-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a MOSFET device, for an SRAM cell, using a self-aligned ion implanted halo region |
| US6562724B1 (en) * | 1997-06-09 | 2003-05-13 | Texas Instruments Incorporated | Self-aligned stack formation |
| US6043129A (en) * | 1997-06-09 | 2000-03-28 | Integrated Device Technology, Inc. | High density MOSFET with raised source and drain regions |
| US6063676A (en) * | 1997-06-09 | 2000-05-16 | Integrated Device Technology, Inc. | Mosfet with raised source and drain regions |
| US5949143A (en) * | 1998-01-22 | 1999-09-07 | Advanced Micro Devices, Inc. | Semiconductor interconnect structure with air gap for reducing intralayer capacitance in metal layers in damascene metalization process |
| US6103455A (en) * | 1998-05-07 | 2000-08-15 | Taiwan Semiconductor Manufacturing Company | Method to form a recess free deep contact |
| US6117754A (en) * | 1998-05-11 | 2000-09-12 | Texas Instruments - Acer Incorporated | Trench free process for SRAM with buried contact structure |
| US6492276B1 (en) | 1998-05-29 | 2002-12-10 | Taiwan Semiconductor Manufacturing Company | Hard masking method for forming residue free oxygen containing plasma etched layer |
| US6019906A (en) * | 1998-05-29 | 2000-02-01 | Taiwan Semiconductor Manufacturing Company | Hard masking method for forming patterned oxygen containing plasma etchable layer |
| US6007733A (en) * | 1998-05-29 | 1999-12-28 | Taiwan Semiconductor Manufacturing Company | Hard masking method for forming oxygen containing plasma etchable layer |
| US6165898A (en) * | 1998-10-23 | 2000-12-26 | Taiwan Semiconductor Manufacturing Company | Dual damascene patterned conductor layer formation method without etch stop layer |
| US6429124B1 (en) * | 1999-04-14 | 2002-08-06 | Micron Technology, Inc. | Local interconnect structures for integrated circuits and methods for making the same |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4288256A (en) * | 1977-12-23 | 1981-09-08 | International Business Machines Corporation | Method of making FET containing stacked gates |
| NL186352C (nl) * | 1980-08-27 | 1990-11-01 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
| EP0192093B1 (en) * | 1985-01-30 | 1990-06-13 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| US4994402A (en) * | 1987-06-26 | 1991-02-19 | Hewlett-Packard Company | Method of fabricating a coplanar, self-aligned contact structure in a semiconductor device |
| KR900008868B1 (ko) * | 1987-09-30 | 1990-12-11 | 삼성전자 주식회사 | 저항성 접촉을 갖는 반도체 장치의 제조방법 |
| US5210048A (en) * | 1988-10-19 | 1993-05-11 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device with offset transistor and method for manufacturing the same |
| US5110753A (en) * | 1988-11-10 | 1992-05-05 | Texas Instruments Incorporated | Cross-point contact-free floating-gate memory array with silicided buried bitlines |
| US5162262A (en) * | 1989-03-14 | 1992-11-10 | Mitsubishi Denki Kabushiki Kaisha | Multi-layered interconnection structure for a semiconductor device and manufactured method thereof |
| US4978637A (en) * | 1989-05-31 | 1990-12-18 | Sgs-Thomson Microelectronics, Inc. | Local interconnect process for integrated circuits |
| US5151387A (en) * | 1990-04-30 | 1992-09-29 | Sgs-Thomson Microelectronics, Inc. | Polycrystalline silicon contact structure |
| JPH04179239A (ja) * | 1990-11-14 | 1992-06-25 | Sony Corp | 半導体装置の製造方法 |
| US5124280A (en) * | 1991-01-31 | 1992-06-23 | Sgs-Thomson Microelectronics, Inc. | Local interconnect for integrated circuits |
| FR2677481B1 (fr) * | 1991-06-07 | 1993-08-20 | Commissariat Energie Atomique | Procede de fabrication d'une cellule de memoire non volatile et cellule de memoire obtenue. |
| US5270240A (en) * | 1991-07-10 | 1993-12-14 | Micron Semiconductor, Inc. | Four poly EPROM process and structure comprising a conductive source line structure and self-aligned polycrystalline silicon digit lines |
| US5149665A (en) * | 1991-07-10 | 1992-09-22 | Micron Technology, Inc. | Conductive source line for high density programmable read-only memory applications |
| KR940010315B1 (ko) * | 1991-10-10 | 1994-10-22 | 금성 일렉트론 주식회사 | 반도체 소자의 미세 패턴 형성 방법 |
| US5246883A (en) * | 1992-02-06 | 1993-09-21 | Sgs-Thomson Microelectronics, Inc. | Semiconductor contact via structure and method |
-
1993
- 1993-12-06 TW TW082110302A patent/TW230266B/zh not_active IP Right Cessation
-
1994
- 1994-01-19 DE DE69413861T patent/DE69413861T2/de not_active Expired - Fee Related
- 1994-01-19 EP EP94300406A patent/EP0609014B1/en not_active Expired - Lifetime
- 1994-01-19 ES ES94300406T patent/ES2122158T3/es not_active Expired - Lifetime
- 1994-01-25 KR KR1019940001235A patent/KR100311059B1/ko not_active Expired - Lifetime
- 1994-01-26 JP JP6006698A patent/JPH06318682A/ja active Pending
-
1996
- 1996-04-12 US US08/635,226 patent/US5654240A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0609014A3 (en) | 1995-01-04 |
| US5654240A (en) | 1997-08-05 |
| JPH06318682A (ja) | 1994-11-15 |
| KR100311059B1 (ko) | 2001-12-15 |
| DE69413861D1 (de) | 1998-11-19 |
| ES2122158T3 (es) | 1998-12-16 |
| DE69413861T2 (de) | 1999-04-22 |
| EP0609014A2 (en) | 1994-08-03 |
| EP0609014B1 (en) | 1998-10-14 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |