Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW82106007ApriorityCriticalpatent/TW215978B/en
Application grantedgrantedCritical
Publication of TW215978BpublicationCriticalpatent/TW215978B/en
One manufacture method of forming silicon-on-insulator by implanting oxygen ion with large angle consists of the following procedures: - grow a thin oxide layer on silicon substrate - deposit tungsten material on thin oxide layer - overlay photo-mask on definable area of silicon - etch the tungsten and silicon substrate to form protrudent silicon block - grow a thin oxide layer - deposit/etch the tungsten to form the protection layer for the side wall of silicon block - implant the oxygen ion into the silicon substrate to form a oxygen ion implant area on the outline of silicon substrate and under the silicon block - remove the tungsten material - heat and anneal to transform the implant area into oxide layer - remove the thin oxide layer
TW82106007A1993-07-271993-07-27The manufacture method of forming silicon-on-insulator
TW215978B
(en)