214601 A6 經濟部中率局B工消费合作社印製 ____B6_ 五、發明説明（） 本發明偽一種積饉電路薄型閛氣化層針孔化學檢驗方 法，主要為透過將表面含有薄型蘭氯化層之待測晶片置入 至氳氣化鉀溶液内數分鐘後，藉由氫氣化鉀僅對矽材料蝕 刻而不對二氧化矽（閘氣化/§ )蝕刻之待性下，使該氫氣 化鉀溶液可滲入位在薄型閘氧化層上之極小針孔或裂縫内 A ，而使針孔或裂缝深度延伸至晶Η基層位置，使於閘氣化 層表面形成較具明顯程度之倒正方錐形孔洞或加大原有之 裂縫，逢到便於撿驗測得該等缺陷者。 按現今對於積體電路而論，其晶Κ内部閛氣化厣因製 程各項因素所造成之缺陷，即為影饗積體電路穩定性之主 要囚素，不良的閛氣化嗶即可能造成漏_δ、绝綈性能不良 及其他問題，而造成閛氣化1不良的原因在於表面産生針 孔、裂縫等物理缺陷，於現今裂程仍無法達到完金無缺點 之情況，欲達到良好的品質及穩定性，即有賴檢駿方式予 以選出不良品，達到品管效果，然以薄型閘氣化層表面之 針孔或裂缝等缺陷，即因其直徑均為小於Ο . Ο 1 # m以 下，而傳統檢驗方式僅使用光學額微鏡或電子頚徹鏡予以 撿驗，相形下，頴然有著不易尋湣該等缺陷之困擾，且透 過全面性之尋找之檢驗方式亦極為耗時費力，故傳統檢驗 方式即無法迅速且有效地檢驗出不良品，當不符黄際需要 ，應有予以改菩之必要。 本發明人鑑於閘氣化®缺陷僅透過物理性檢驗未符效 率化之缺點，乃經悉心地試驗舆研究並一本锲而不捨之發 {請先"<!^面之注$項再$本I) Ρ -- - I I I— _____ο. 本纸張尺度適用中國國家標準（CNS)肀4规樁（210 X 297公釐〉 314601 A6 B6____ 五、發明説明（） (請先閱讀背面之注项4¾本買) 明精神，终發明出一種積體電路薄型閘氣化層針孔化學撿 驗方法，主要将含有閛氣化層之待測晶片置入於氫氣化鉀 溶液内數分鐘，透過氳氣化鉀本身僅對矽材料蝕刻而不對 二氣化矽（閘氧化層）蝕刻之特性下，可滲透ϋ入閘氣化 層該針孔或裂缝位置，並蝕刻該針孔或裂缝位置之矽材料 部份，而使閘氣化層該等針孔或裂縫绺該氫氧化鉀做矽材 料蝕刻後，令針孔或裂縫形成一較為明顯及容易査覺之倒 正方錐形較深的孔洞，據此，即可逹到輕易地由顯微鏡迅 速而有效地測得，為一極具窸用價值之化學撿驗方法。 本發明之次一目的在於提供一種積體電路薄型閘氣化 層針孔化學迨駿方ώ ,这等笕氣it评溶皎，由於其僅對δ夕 材料蝕刻而不對二氣化δ夕蝕刻之持性下，對於晶片表面之 閑氣化®部份並不造成任何影蜜，而僅有對應於針孔或裂 縫位置産生化學作用，故對於無缺陷之晶Η不致造成不良 影鬱，為一可廣泛應用於閛氯化層檢驗之化學方法者β 為使 貴審査委頁能進一步瞭解本發明之方法持歡， 兹附以圖式詳細説明如后： (—)圖式部份： 經濟部中央櫺準爲霣工消费合作社印製 第一画：偽本發明之未绠化學處理前之晶片剖面圖。 第二圖：傜本發明之化學處理後之晶片剖面圖。 第三圖：偽本發明之化學處理後之氣化層表面顯撤示圖。 (二）.圖號部份： (1 〇 )基層 （2 0 )閘氣化層 本紙張尺度適用中困國家標毕（CNS)甲4規樁（210 X 297公;t) 214601 a6 ___B6_ 五、發明説明（） (3 0 )針孔 （3 1 )倒正方錐形孔 本發明之據以使積蘐電路薄型閘氣化層之針孔或裂縫 等缺陷等現象轉變為較明顯及易於由電子顯微鏡測得之方 法上，卽為以一種揉用氫氣化鉀之化學蝕刻方式，首先以 適置之氫氣化鉀（本實施例可使用15公克）與較多量之 去離子水溶液（本實施例可使用9 0公克）相互混合成氫 氧化鉀（Κ Ο Η )溶液，於氫氧化鉀溶液置於9 0 °C之搡 作台上，將表面僅附有薄型閛氣化層之待測晶片浸泡於溶 液中，經數分鐘（本實施例可設為3分鐘）後，即可予以 取出而可由電子顯撤鏡予以檢駿，而由於前述該晶片表面 該溥型閛氧化層經浸丨包於氫氯化鉀溶液後，可使該溶液_ 透進入閛氯化層表面既有之針孔或裂缝中，並蝕刻針孔或 裂縫中所含的矽材科部份，使該等針孔或裂缝轉變為縱深 較深且呈錐度漸近缩小之倒正方錐形孔；同或裂缝，{吏其.達 由電子顯澈鏡觀測時，可較輕易地發現或察覺該針孔及裂 縫，提供一種便於撿驗出表面針孔及裂缝現象之化學檢驗 法β 關於本發明所運用之氫氣化评溶液，其本身之待性為 可對晶片之矽基層（s I L I C 0 N S I； B S T R A Τ Ε )的矽材料蝕刻214601 A6 Printed by B Industry and Consumer Cooperative of the Central Bureau of Economic Affairs ____B6_ V. Description of the invention () The present invention is a pseudo-chemical method for pinhole chemical inspection of the thin vaporized layer of the accumulated circuit, mainly by containing a thin blue chloride layer on the surface After the chip to be tested is placed in the potassium hydroxide solution for a few minutes, the potassium hydroxide will only etch the silicon material and not the silicon dioxide (gate gasification / §) etching. The solution can penetrate into the tiny pinholes or cracks A on the thin gate oxide layer, so that the depth of the pinholes or cracks extends to the position of the crystal H base layer, so that a more obvious inverted square cone is formed on the surface of the gate gasification layer. Holes or enlarged original cracks, which are convenient for inspection and detection of such defects. According to today's integrated circuit, the defects caused by various factors in the process of the internal gasification of the crystal K are the main factors that affect the stability of the integrated circuit. Poor gasification beeps may cause Leakage _δ, poor insulation performance and other problems, the reason for the bad gasification 1 is due to pinholes, cracks and other physical defects on the surface. In the current cracking process, it is still unable to achieve the complete metal without defects. To achieve a good Quality and stability, that is, the defective products are selected by the inspection method to achieve the quality control effect, but the defects such as pinholes or cracks on the surface of the thin gate gasification layer are due to their diameters being less than Ο. Ο 1 # m below However, traditional inspection methods only use optical frontal micromirrors or electronic eyepieces for inspection. In contrast, Weiran has the difficulty of finding these defects, and the comprehensive inspection method is also very time-consuming and laborious. Therefore, the traditional inspection method can not quickly and effectively detect defective products. When it does not meet the needs of Huang Ji, it should be necessary to change the bodhisattva. In view of the shortcomings of the gate gasification® defect that only the physical inspection does not meet the efficiency, the inventor has carefully tested and studied and published a perseverance {please first " <! ^ 面 之 注 $ Item then $ This I) Ρ--III— _____ ο. This paper scale is applicable to the Chinese National Standard (CNS) 4 gauge pile (210 X 297 mm) 314601 A6 B6____ V. Invention description () (please read the back first Note 4 4) The spirit of the invention finally invented a method for pinhole chemical inspection of the thin gate gasification layer of integrated circuits, which mainly puts the wafer to be tested containing the gasification layer of the nuclide into the potassium hydroxide solution for a few minutes , Through the characteristic that potassium gasification itself only etched the silicon material and not the second gasification silicon (gate oxide layer), it can penetrate into the pinhole or crack position of the gate gasification layer and etch the pinhole or crack The silicon material part of the position, and the pinholes or cracks in the gate gasification layer are etched by the potassium hydroxide as the silicon material, so that the pinholes or cracks form a more obvious and easy to detect inverted square pyramid deeper The hole of the hole can be measured easily and quickly by the microscope It is a very valuable chemical inspection method. The next object of the present invention is to provide a thin gate gasification layer pinhole chemistry of integrated circuits. This kind of gas is not suitable for evaluation because of its Etching only the δxi material and not the second gasification δxi etching does not cause any shadow honey to the idle gasification ® part of the wafer surface, but only produces chemical effects corresponding to the positions of pinholes or cracks. Therefore, the defect-free crystal H will not cause adverse shadow depression, and it is a chemical method that can be widely used in the inspection of the chloride layer of β. In order for your review committee to understand the method of the present invention, please attach the diagram The detailed description is as follows: (—) Schematic part: The Central Ministry of Economic Affairs prints the first picture for the Yugong Consumer Cooperative: the cross-sectional view of the wafer before the chemical treatment of the pseudo-present invention. The second picture: the present invention The cross-sectional view of the wafer after the chemical treatment. The third picture: the display of the surface of the vaporized layer after the chemical treatment of the present invention. (2). The part of the figure number: (1 〇) the base layer (2 0) gate gas The standard of the layered paper is applicable to the National Standard of China (CNS) Grade 4 (210 X 297 g; t) 214601 a6 ___B6_ V. Description of the invention () (3 0) Pinhole (3 1) inverted square tapered hole According to the present invention, the pinhole of the thin gate gasification layer of the circuit Cracks and other defects become more obvious and easy to measure by electron microscope. It is a kind of chemical etching method using potassium hydroxide. First, the appropriate potassium hydroxide (15 grams can be used in this embodiment) ) And a large amount of deionized aqueous solution (90 grams can be used in this embodiment) to form a potassium hydroxide (Κ Ο Η) solution, and the potassium hydroxide solution is placed on a workbench at 90 ° C, and the surface The wafer to be tested with only a thin vaporization layer of dung can be immersed in the solution, and after a few minutes (this embodiment can be set to 3 minutes), it can be taken out and can be inspected by the electronic withdrawal mirror. After immersing and encapsulating the oxide layer of Pu-type nuclei on the surface of the wafer with potassium hydrochloride solution, the solution can penetrate into the existing pinholes or cracks on the surface of the nuclide chloride layer, and etch the pinholes or cracks The silicon material section of the And the inverted square tapered hole that tapers asymptotically; the same or the crack, when it is observed by the electronic clear mirror, the pinhole and the crack can be more easily found or detected, providing a convenient way to detect the surface needle The chemical inspection method for the phenomenon of holes and cracks β The hydrogenation evaluation solution used in the present invention has its own hospitality to etch the silicon material of the silicon base layer (s ILIC 0 NSI; BSTRA Τ Ε) of the wafer
後濟部中央標準局Rx消费合作社印S (請先閲讀背面之注意事項再填寫衣頁》 (E T C Η )而不致於對二氣化矽（閘氧化層）産生蝕刻之選擇 性蝕刻持性下，當含有閑氣化層之晶Η置於氫氣化鉀溶液 中時，該閘氧化®即形同一保護層，該氫氣化鉀溶液即無 法對之進行蝕刻，然對於閑氣化層上有著凹陷之針孔或裂 本紙張尺度適用中國國家標準（CNS)甲4規格（210 X 297公釐） Α6 Β6 五、發明説明（） 縫之缺陷存在時，即如第一圖所示，位在矽基層（10) 上方之閘氣化S ( 2 0 >表面有箸一穿經閛氯化層（2 0 )而延伸至矽基層（1 〇 )之針孔（3 0 ) ( P I N Η 0 L E )時， 該氳氣化鉀溶液即經針孔（3 0 )或裂縫内並沿著該針孔 或裂縫滲入至矽基底位置，而可對該相應矽基層區域之矽 參 材料進行蝕刻作業，於適窖蝕刻去除該針孔（30)下方 之矽基層矽材料後，即同時令對應在針孔（3 0)週邊之 二氣化矽材料適窖剝離，故而形成一如第二圃所示，使原 針孔（3 0 )位置轉變為一外直徑較寬之倒正方維形孔（ 3 1)，而由閘氣化層外表經電子頭微鏡檢驗時，即呈現 一如洁三圏之外表放大11所示，该針孔（30)即呈現一 外表為矩形並向内部延伸之倒正方錐形孔（31),故以 此經氫氣化鉀處理後之針孔（3 0 )迪形，不僅形成一便 (請先閏讀背面之注意事項再壜寫本頁) -裝. 訂. 經濟部t*櫺準戽霣工消费合作社印製 及理 針述 對氣法 ， 長處.1前 生閘方性 加之。化如 産之理用 深陷者氧成 致陷處適 縱缺效極形 不缺學的 之出有閛能 而無化好 }驗及薄可 ，於之良 ο 檢便視而 刻對明有 3 迅簡亦向 蝕 ，發具 {快形形方。料性本應 孔可更造列者材持故 ， 針一驗的排孔矽之 ，内 原為檢洞格形對瓛應程 使確之孔晶雄僅影反製 更 ，陷顙之角液良良路 , 式缺明質三溶不不電 外型層等材倒鉀層何饉 態的化該矽或化化任積 型大氣述之孔氣氣生式 之寬閘前方形氮閘産各 覚較令-下錐該之致於 査現期外縫方以矽不用 驗呈，此裂正故化並適 檢其法 或倒 氣層可 於使方 孔之 二化當 0 本·纸張尺度適用中國困家揉準（CNS)甲4規格（210 X 297公货） A6 B6 五、發明説明（） 確為一具適當應用價值者，應苻專利申請要件，爰依法提 出申諳。 (請先閲讀背面之注意事项再塡寫本頁)Printed by the Rx Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling in the clothing page) (ETC Η) so as not to cause selective etching of the silicon dioxide (gate oxide layer). When the crystal H containing the idle gasification layer is placed in the potassium hydroxide solution, the gate oxide® will form the same protective layer, and the potassium hydroxide solution will not be able to etch it, but there are depressions on the idle gasification layer The size of the pinhole or cracked paper is applicable to the Chinese National Standard (CNS) A 4 specifications (210 X 297 mm) Α6 Β6 V. Description of the invention () When there is a flaw in the seam, as shown in the first picture, it is located in silicon The gate gasification S (2 0>) above the base layer (10) has a pinhole (3 0) (PIN Η 0 LE) which extends through the chrysanthemum chloride layer (2 0) and extends to the silicon base layer (1 〇) ), The potassium hydroxide gas solution penetrates into the silicon substrate through the pinhole (3 0) or crack and along the pinhole or crack, and the silicon ginseng material in the corresponding silicon base layer area can be etched, After removing the silicon material under the pinhole (30) by suitable cell etching, the corresponding The second vaporized silicon material around the hole (30) is suitable for cellar peeling, so it is formed as shown in the second garden, so that the position of the original pinhole (30) is converted into an inverted square dimensional hole (3) with a wider outer diameter. 1), when the surface of the gasification layer of the gate is inspected by the electronic head micromirror, it is as shown in the external appearance of the clean Sanhuan. The pinhole (30) shows a rectangular appearance and extends backwards to the inside. The square taper hole (31), so the pinhole (30) after the treatment with potassium hydroxide is not only formed (please read the precautions on the back before writing this page)-install. . The Ministry of Economic Affairs t * 抂 准 戣 霣 霣 霣 consumption cooperatives printed and rationalized the method of gas, strengths. 1 Pre-existing squadiness plus. The reason for the use of production is to use the deep trapped oxygen to cause the trapped to be ineffective The extreme shape does not lack learning, there is no power but good experience and thinness, Yu Zhiliang ο The inspection will be obvious to the Ming 3 quickly and also eclipse, issued with {fast shape square. Material The original hole can be made more of the material of the column, the hole of the silicon is tested for the first time, the original is the inspection hole shape, and the application process of the urn is so that the true hole Jingxiong only reflects the countermeasures, and the good corner of the corner is good. , The type of open-layer potassium layer of the three-phase non-dissolving non-electrical outer layer and other materials in the form of light-emitting silicon and the chemical-enrichment type are described in the atmosphere. Order-the lower cone should be due to the fact that the outer side of the seam is not required to be presented in the inspection period. This crack is justified and the method or the inverted gas layer can be used to make the square hole two. The paper size is applicable China Sleepy Home Standard (CNS) Grade A 4 (210 X 297 public goods) A6 B6 V. Description of invention () Those who are indeed of appropriate application value should apply for the patent application requirements and submit the application according to law. (Please first (Read the notes on the back and write this page)
Q I I -裝- 訂.Q I I-Binding-Order.
D 經濟部中央標準爲βτ工消费合作社印製 本紙張尺度適用中國國家標準（CNS)甲4规格（210 X 297公* )D The Central Standard of the Ministry of Economic Affairs is printed by the βτ Industrial Consumer Cooperative. This paper scale applies the Chinese National Standard (CNS) A4 specifications (210 X 297 g *)