TW202507090A - 坩鍋、使用其之β型三氧化二鎵單晶基板之製造方法及β型三氧化二鎵單晶基板 - Google Patents

坩鍋、使用其之β型三氧化二鎵單晶基板之製造方法及β型三氧化二鎵單晶基板 Download PDF

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Publication number
TW202507090A
TW202507090A TW113106980A TW113106980A TW202507090A TW 202507090 A TW202507090 A TW 202507090A TW 113106980 A TW113106980 A TW 113106980A TW 113106980 A TW113106980 A TW 113106980A TW 202507090 A TW202507090 A TW 202507090A
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Taiwan
Prior art keywords
single crystal
crucible
film
mentioned
crystal substrate
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TW113106980A
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English (en)
Chinese (zh)
Inventor
羽木良明
石川幸雄
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日商住友電氣工業股份有限公司
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Publication of TW202507090A publication Critical patent/TW202507090A/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW113106980A 2023-06-07 2024-02-27 坩鍋、使用其之β型三氧化二鎵單晶基板之製造方法及β型三氧化二鎵單晶基板 TW202507090A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2023/021100 2023-06-07
PCT/JP2023/021100 WO2024252544A1 (ja) 2023-06-07 2023-06-07 坩堝、それを用いたベータ型三酸化二ガリウム単結晶基板の製造方法、およびベータ型三酸化二ガリウム単結晶基板

Publications (1)

Publication Number Publication Date
TW202507090A true TW202507090A (zh) 2025-02-16

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TW113106980A TW202507090A (zh) 2023-06-07 2024-02-27 坩鍋、使用其之β型三氧化二鎵單晶基板之製造方法及β型三氧化二鎵單晶基板

Country Status (4)

Country Link
JP (1) JPWO2024252544A1 (enExample)
CN (1) CN120826501A (enExample)
TW (1) TW202507090A (enExample)
WO (1) WO2024252544A1 (enExample)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH042687A (ja) * 1990-04-18 1992-01-07 Fujikura Ltd 酸化物単結晶育成用るつぼ
JP3639147B2 (ja) * 1999-06-02 2005-04-20 日本電信電話株式会社 単結晶育成用るつぼ
JP2016117606A (ja) * 2014-12-19 2016-06-30 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶の育成方法、及び坩堝
JP7155968B2 (ja) * 2018-12-04 2022-10-19 Tdk株式会社 単結晶育成用ルツボ及び単結晶製造方法
US11674239B2 (en) * 2020-02-27 2023-06-13 Fujikoshi Machinery Corp. Gallium oxide crystal manufacturing device
CN114318503A (zh) * 2021-12-30 2022-04-12 陕西旭光晶体科技有限公司 氧化嫁晶体用的铂铱合金坩埚以及制备方法

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WO2024252544A1 (ja) 2024-12-12
JPWO2024252544A1 (enExample) 2024-12-12
CN120826501A (zh) 2025-10-21

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