TW202500600A - 感放射線性組成物及圖案形成方法 - Google Patents

感放射線性組成物及圖案形成方法 Download PDF

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Publication number
TW202500600A
TW202500600A TW113120723A TW113120723A TW202500600A TW 202500600 A TW202500600 A TW 202500600A TW 113120723 A TW113120723 A TW 113120723A TW 113120723 A TW113120723 A TW 113120723A TW 202500600 A TW202500600 A TW 202500600A
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TW
Taiwan
Prior art keywords
group
radiation
acid
structural unit
sensitive composition
Prior art date
Application number
TW113120723A
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English (en)
Chinese (zh)
Inventor
桐山和也
大宮拓也
Original Assignee
日商Ｊｓｒ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｊｓｒ股份有限公司 filed Critical 日商Ｊｓｒ股份有限公司
Publication of TW202500600A publication Critical patent/TW202500600A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Materials For Photolithography (AREA)
TW113120723A 2023-06-28 2024-06-05 感放射線性組成物及圖案形成方法 TW202500600A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-106132 2023-06-28
JP2023106132 2023-06-28

Publications (1)

Publication Number Publication Date
TW202500600A true TW202500600A (zh) 2025-01-01

Family

ID=93938193

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113120723A TW202500600A (zh) 2023-06-28 2024-06-05 感放射線性組成物及圖案形成方法

Country Status (5)

Country Link
US (1) US20260104639A1 (https=)
JP (1) JPWO2025004621A1 (https=)
KR (1) KR20260027927A (https=)
TW (1) TW202500600A (https=)
WO (1) WO2025004621A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026054063A1 (ja) * 2024-09-09 2026-03-12 三菱瓦斯化学株式会社 ヨウ素含有（メタ）アクリル酸エステル化合物及びヨウ素・水酸基含有重合体の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102395705B1 (ko) * 2017-04-21 2022-05-09 후지필름 가부시키가이샤 Euv광용 감광성 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법
JP7636178B2 (ja) * 2020-02-28 2025-02-26 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Also Published As

Publication number Publication date
KR20260027927A (ko) 2026-03-03
WO2025004621A1 (ja) 2025-01-02
JPWO2025004621A1 (https=) 2025-01-02
US20260104639A1 (en) 2026-04-16

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