KR20260027927A - 감방사선성 조성물 및 패턴 형성 방법 - Google Patents

감방사선성 조성물 및 패턴 형성 방법

Info

Publication number
KR20260027927A
KR20260027927A KR1020257042360A KR20257042360A KR20260027927A KR 20260027927 A KR20260027927 A KR 20260027927A KR 1020257042360 A KR1020257042360 A KR 1020257042360A KR 20257042360 A KR20257042360 A KR 20257042360A KR 20260027927 A KR20260027927 A KR 20260027927A
Authority
KR
South Korea
Prior art keywords
group
radiation
acid anion
acid
sensitive composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257042360A
Other languages
English (en)
Korean (ko)
Inventor
가즈야 기리야마
다쿠야 오미야
Original Assignee
제이에스알 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제이에스알 가부시키가이샤 filed Critical 제이에스알 가부시키가이샤
Publication of KR20260027927A publication Critical patent/KR20260027927A/ko
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70033Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Materials For Photolithography (AREA)
KR1020257042360A 2023-06-28 2024-05-22 감방사선성 조성물 및 패턴 형성 방법 Pending KR20260027927A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2023-106132 2023-06-28
JP2023106132 2023-06-28
PCT/JP2024/018785 WO2025004621A1 (ja) 2023-06-28 2024-05-22 感放射線性組成物及びパターン形成方法

Publications (1)

Publication Number Publication Date
KR20260027927A true KR20260027927A (ko) 2026-03-03

Family

ID=93938193

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257042360A Pending KR20260027927A (ko) 2023-06-28 2024-05-22 감방사선성 조성물 및 패턴 형성 방법

Country Status (5)

Country Link
US (1) US20260104639A1 (https=)
JP (1) JPWO2025004621A1 (https=)
KR (1) KR20260027927A (https=)
TW (1) TW202500600A (https=)
WO (1) WO2025004621A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026054063A1 (ja) * 2024-09-09 2026-03-12 三菱瓦斯化学株式会社 ヨウ素含有(メタ)アクリル酸エステル化合物及びヨウ素・水酸基含有重合体の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102395705B1 (ko) * 2017-04-21 2022-05-09 후지필름 가부시키가이샤 Euv광용 감광성 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법
JP7636178B2 (ja) * 2020-02-28 2025-02-26 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Also Published As

Publication number Publication date
WO2025004621A1 (ja) 2025-01-02
JPWO2025004621A1 (https=) 2025-01-02
TW202500600A (zh) 2025-01-01
US20260104639A1 (en) 2026-04-16

Similar Documents

Publication Publication Date Title
JP7800800B2 (ja) 感放射線性樹脂組成物及びパターン形成方法
KR20250009957A (ko) 감방사선성 수지 조성물, 패턴 형성 방법, 감방사선성 산 발생제 및 산 확산 제어제
US20260104639A1 (en) Radiation-sensitive composition and pattern forming method
KR20250110224A (ko) 감방사선성 수지 조성물, 패턴 형성 방법 및 감방사선성 산 발생제
KR20260020918A (ko) 감방사선성 조성물 및 패턴 형성 방법
JPWO2017122697A1 (ja) 感放射線性樹脂組成物、レジストパターン形成方法、酸拡散制御剤及び化合物
KR20260051003A (ko) 감방사선성 조성물, 패턴 형성 방법 및 오늄염
WO2025070124A1 (ja) 感放射線性組成物、パターン形成方法及びオニウム塩化合物
KR20250126710A (ko) 감방사선성 수지 조성물 및 패턴 형성 방법
KR20260027866A (ko) 감방사선성 조성물, 패턴 형성 방법 및 오늄염 화합물
KR20260015785A (ko) 감방사선성 조성물, 패턴 형성 방법 및 오늄염 화합물
KR20260015786A (ko) 감방사선성 조성물, 패턴 형성 방법 및 오늄염 화합물
WO2025126742A1 (ja) 感放射線性組成物及びパターン形成方法
WO2025173494A1 (ja) 感放射線性組成物、パターン形成方法及び感放射線性酸発生剤
KR20250152562A (ko) 감방사선성 조성물 및 패턴 형성 방법
WO2025047218A1 (ja) 感放射線性組成物及びパターン形成方法
KR20250136308A (ko) 감방사선성 조성물 및 패턴 형성 방법
KR20250160914A (ko) 감방사선성 조성물 및 패턴 형성 방법
KR20250093308A (ko) 감방사선성 수지 조성물 및 패턴 형성 방법
KR20250076378A (ko) 감방사선성 조성물 및 패턴 형성 방법
KR20260035137A (ko) 감방사선성 조성물, 레지스트 패턴 형성 방법, 중합체 및 그의 제조 방법, 그리고 화합물
WO2025220599A1 (ja) 感放射線性組成物、パターン形成方法、重合体及び化合物
KR20260061156A (ko) 감방사선성 조성물 및 패턴 형성 방법
WO2025070125A1 (ja) 感放射線性組成物及びパターン形成方法
WO2025263561A1 (ja) 感放射線性組成物、パターン形成方法、化合物、及び重合体

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13 Application amended

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)