TW202429625A - 半導體裝置結構及其製備方法 - Google Patents

半導體裝置結構及其製備方法 Download PDF

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Publication number
TW202429625A
TW202429625A TW112109849A TW112109849A TW202429625A TW 202429625 A TW202429625 A TW 202429625A TW 112109849 A TW112109849 A TW 112109849A TW 112109849 A TW112109849 A TW 112109849A TW 202429625 A TW202429625 A TW 202429625A
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TW
Taiwan
Prior art keywords
dielectric layer
semiconductor device
device structure
preparing
same
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TW112109849A
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English (en)
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TWI833606B (zh
Inventor
黃則堯
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南亞科技股份有限公司
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Priority claimed from US18/094,507 external-priority patent/US20240234313A1/en
Application filed by 南亞科技股份有限公司 filed Critical 南亞科技股份有限公司
Application granted granted Critical
Publication of TWI833606B publication Critical patent/TWI833606B/zh
Publication of TW202429625A publication Critical patent/TW202429625A/zh

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Abstract

本申請提供一種半導體裝置結構及其製備方法。該半導體裝置結構包含設置在一半導體基底上的一第一介電層，以及設置在該第一介電層上的一第二介電層。半導體裝置結構也包含設置在該第二介電層內的一間隙物結構，以及穿過該第二介電層且延伸進入該第一介電層的一導電結構。該導電結構由該間隙物結構環繞。半導體裝置結構更包含將該導電結構與該第一介電層、該第二介電層和該間隙物結構隔開的一襯層。該襯層具有直接接觸該第一介電層的一錐形側壁。
TW112109849A 2023-01-09 2023-03-16 半導體裝置結構及其製備方法 TWI833606B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18/094,507 US20240234313A1 (en) 2023-01-09 2023-01-09 Semiconductor device structure with liner layer having tapered sidewall and method for preparing the same
US18/094,507 2023-01-09

Publications (2)

Publication Number Publication Date
TWI833606B TWI833606B (zh) 2024-02-21
TW202429625A true TW202429625A (zh) 2024-07-16

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ID=90825132

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Application Number Title Priority Date Filing Date
TW112109849A TWI833606B (zh) 2023-01-09 2023-03-16 半導體裝置結構及其製備方法

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US (2) US20240234313A1 (zh)
CN (1) CN118315368A (zh)
DE (1) DE102023115196A1 (zh)
TW (1) TWI833606B (zh)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10014382B2 (en) * 2014-03-13 2018-07-03 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device with sidewall passivation and method of making
US9299608B2 (en) * 2014-05-19 2016-03-29 Globalfoundries Inc. T-shaped contacts for semiconductor device
US11424346B2 (en) * 2020-06-30 2022-08-23 Nanya Technology Corporation Semiconductor device with programmable feature and method for fabricating the same

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