TW202422949A - Radio wave reflector - Google Patents
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- TW202422949A TW202422949A TW112129048A TW112129048A TW202422949A TW 202422949 A TW202422949 A TW 202422949A TW 112129048 A TW112129048 A TW 112129048A TW 112129048 A TW112129048 A TW 112129048A TW 202422949 A TW202422949 A TW 202422949A
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Abstract
本發明之課題在於能夠提昇反射電波時之擴散性。 本發明之電波反射體11具備具有反射電波之導電體12之導電層16。導電體12具有:第1導電部4,其以一定之間距反覆形成有第1包圍部41,該第1包圍部41包圍未形成導電體12之第1區域R1;及第2導電部5,其包含至少1個第2包圍部51,該第2包圍部51包圍跨及相鄰之複數個第1區域R1之第2區域R2。第1包圍部41與第2包圍部51於投影至與導電層16平行之投影面之情形時,不具有彼此共有之部分。The subject of the present invention is to improve the diffusivity when reflecting radio waves. The radio wave reflector 11 of the present invention has a conductive layer 16 having a conductor 12 for reflecting radio waves. The conductor 12 has: a first conductive portion 4, which has a first enclosing portion 41 repeatedly formed at a certain interval, and the first enclosing portion 41 surrounds a first region R1 where the conductor 12 is not formed; and a second conductive portion 5, which includes at least one second enclosing portion 51, and the second enclosing portion 51 surrounds a second region R2 spanning and adjacent to a plurality of first regions R1. When projected onto a projection plane parallel to the conductive layer 16, the first enclosing portion 41 and the second enclosing portion 51 do not have a common portion with each other.
Description
本發明係關於一種電波反射體。The present invention relates to a radio wave reflector.
於行動電話或無線通訊中,使用被稱為厘米波或毫米波之3 GHz以上300 GHz以下左右之頻帶之電波。此種波長較短之電波由於直進性較強,即便存在障礙物亦不易回折,故而為了使電波到達較廣之範圍,而在建造物之牆壁或地板面、天花板、柱等建造物之表面(以下稱為「牆壁等」)設置反射板。In mobile phones and wireless communications, radio waves in the frequency band of about 3 GHz to 300 GHz, called centimeter waves or millimeter waves, are used. Since these short-wavelength radio waves have strong straightness, they are not easy to bend even if there are obstacles. Therefore, in order to make the radio waves reach a wider range, reflectors are installed on the walls, floors, ceilings, columns and other surfaces of buildings (hereinafter referred to as "walls, etc.").
例如專利文獻1中記載了一種通訊系統,其係將單極天線、及反射電波之金屬反射板配置於室內之地板下空間。藉由金屬反射板,而使自單極天線輸出之電波擴散至地板下空間,並且防止自地板下空間洩漏至起居室(建築物)外、或電波被建造物之地板部吸收。 [先前技術文獻] [專利文獻]For example, Patent Document 1 describes a communication system that places a monopole antenna and a metal reflector for reflecting radio waves in the space under the floor of a room. The metal reflector diffuses the radio waves output from the monopole antenna to the space under the floor, and prevents the radio waves from leaking from the space under the floor to the outside of the living room (building) or being absorbed by the floor of the building. [Prior Art Document] [Patent Document]
[專利文獻1]日本特開2010-258514號公報[Patent Document 1] Japanese Patent Application Publication No. 2010-258514
[發明所欲解決之課題][The problem that the invention wants to solve]
惟,專利文獻1中所記載之金屬反射板存在以下問題,即,由於其單純地為金屬製之反射板,故而反射電波時之擴散性欠佳。即,專利文獻1中所記載之金屬反射板雖然可在與正規反射對應之位置保持電波強度,但在正規反射之周圍,電波強度極度降低。However, the metal reflector described in Patent Document 1 has the following problem: since it is a reflector made of metal alone, the diffusion property when reflecting radio waves is poor. That is, although the metal reflector described in Patent Document 1 can maintain the intensity of radio waves at the position corresponding to the regular reflection, the intensity of radio waves is extremely reduced around the regular reflection.
本發明之目的在於提供一種能夠提昇反射電波時之擴散性之電波反射體。 [解決課題之技術手段]The purpose of the present invention is to provide a radio wave reflector that can improve the diffusion of radio waves when reflecting them. [Technical means to solve the problem]
為了達成上述目的,本發明包含以下項所記載之主題。In order to achieve the above-mentioned object, the present invention includes the subject matter described in the following items.
項1.一種電波反射體,其具備具有反射電波之導電體之導電層, 上述導電體具有: 第1導電部,其以一定之間距反覆形成有第1包圍部,該第1包圍部包圍未形成上述導電體之第1區域;以及 第2導電部,其包含至少1個第2包圍部,該第2包圍部包圍跨及相鄰之複數個上述第1區域之第2區域;且 上述第1包圍部與上述第2包圍部於投影至與上述導電層平行之投影面之情形時,不具有彼此共有之部分。Item 1. A radio wave reflector, comprising a conductive layer having a conductor that reflects radio waves, wherein the conductor comprises: a first conductive portion having a first surrounding portion repeatedly formed at a certain interval, the first surrounding portion surrounding a first area where the conductor is not formed; and a second conductive portion comprising at least one second surrounding portion, the second surrounding portion surrounding a second area spanning and adjacent to a plurality of the first areas; and the first surrounding portion and the second surrounding portion do not have a common portion when projected onto a projection plane parallel to the conductive layer.
項2.如項1所記載之電波反射體,其中,上述第1包圍部之周長為上述電波之波長以下之長度。Item 2. The radio wave reflector as described in Item 1, wherein the perimeter of the first surrounding portion is a length less than the wavelength of the radio wave.
項3.如項2所記載之電波反射體,其中,上述第1包圍部之周長為上述電波之波長之5/6倍以下之長度。Item 3. The radio wave reflector as described in Item 2, wherein the perimeter of the first surrounding portion is a length that is not more than 5/6 times the wavelength of the radio wave.
項4.如項1至3中任一項所記載之電波反射體,其中,上述第2包圍部之周長為上述電波之波長以下之長度。Item 4. The radio wave reflector as described in any one of Items 1 to 3, wherein the perimeter of the second surrounding portion is a length less than the wavelength of the radio wave.
項5.如項1至4中任一項所記載之電波反射體,其中,相鄰之上述第2區域之重心間之距離為上述電波之波長之0.015倍以上之長度。Item 5. The radio wave reflector as described in any one of Items 1 to 4, wherein the distance between the centers of gravity of adjacent second regions is at least 0.015 times the wavelength of the radio wave.
項6.如項1至5中任一項所記載之電波反射體,其中,在上述第2區域填充有相對介電常數為1.5以上之介電體。Item 6. The radio wave reflector as described in any one of Items 1 to 5, wherein the second region is filled with a dielectric having a relative dielectric constant of 1.5 or more.
項7.如項1至6中任一項所記載之電波反射體,其進而具備:保護層,其保護上述導電層;及 接著層,其設置於上述導電層與上述保護層之間,將上述導電層與上述保護層接著。Item 7. The radio wave reflector as described in any one of Items 1 to 6, further comprising: a protective layer that protects the conductive layer; and a bonding layer that is disposed between the conductive layer and the protective layer to bond the conductive layer to the protective layer.
項8.如項1至7中任一項所記載之電波反射體,其中,上述第1導電部與上述第2導電部形成於同一平面上。Item 8. The radio wave reflector as described in any one of Items 1 to 7, wherein the first conductive portion and the second conductive portion are formed on the same plane.
項9.如項1至8中任一項所記載之電波反射體,其中,上述第1導電部與上述第2導電部在與上述導電層正交之方向,形成於不同之位置。Item 9. The radio wave reflector as described in any one of Items 1 to 8, wherein the first conductive portion and the second conductive portion are formed at different positions in a direction orthogonal to the conductive layer.
項10.如項1至9中任一項所記載之電波反射體,其中,上述第1包圍部及上述第2包圍部之至少一者之線寬為0.3 μm以上10 μm以下。Item 10. The radio wave reflector as described in any one of Items 1 to 9, wherein the line width of at least one of the first surrounding portion and the second surrounding portion is not less than 0.3 μm and not more than 10 μm.
項11.如項1至10中任一項所記載之電波反射體,其中,上述第1包圍部及上述第2包圍部之至少一者之線的厚度為0.02 μm以上10 μm以下。 [發明之效果]
本發明之上述態樣之電波反射體具有能夠提昇反射電波時之擴散性之優點。The radio wave reflector of the present invention has the advantage of being able to improve the diffusivity when reflecting radio waves.
<實施方式> 以下,參照圖式來說明本發明之實施方式。如圖1所示,本實施方式之電波反射體11係能夠反射電波之片狀構件。電波反射體11例如構成為反射自電波產生部20輸出之電波。由電波反射體11反射之電波被接收部21接收。如圖3所示,電波反射體11依序積層有包含導電體12之導電層16、接著層14、及保護層15。<Implementation> Hereinafter, the implementation of the present invention will be described with reference to the drawings. As shown in FIG1 , the
本說明書所述之「片」意指該物體之厚度相對於俯視下之外緣間之最大長度為10%以下之形狀。於俯視下之形狀為矩形之情形時,「俯視下之外緣間之最大長度」意指對角線之長度。又,於俯視下之形狀為圓形之情形時,「俯視下之外緣間之最大長度」意指直徑之長度。本說明書中,膜、箔、薄膜等亦包含於「片」中。The "sheet" mentioned in this specification refers to a shape in which the thickness of the object is less than 10% of the maximum length between the outer edges when viewed from above. When the shape when viewed from above is a rectangle, the "maximum length between the outer edges when viewed from above" means the length of the diagonal. When the shape when viewed from above is a circle, the "maximum length between the outer edges when viewed from above" means the length of the diameter. In this specification, films, foils, thin films, etc. are also included in the "sheet".
電波產生部20係輸出電波之裝置。本實施方式之電波產生部20係具有發送天線之通訊裝置,該發送天線能夠輸出以電波作為介質之無線訊號。作為電波產生部20,例如可列舉:固定型基地台、行動電話基地台、電波式發送器、無線終端等。The
接收部21係能夠接收電波之機器。本實施方式之接收部21係具有接收天線之通訊機器。作為接收部21,例如可列舉:智慧型手機、行動電話、平板終端、筆記型PC、攜帶型遊戲機、中繼器、收音機、電視等。The
本實施方式之電波反射體11能夠反射之電波例如係入射波之頻率屬於3 GHz以上5 GHz以下、25 GHz以上30 GHz以下、及100 GHz以上300 GHz以下中之任一範圍之電波。此處所述之「能夠反射之電波」意指具有至少1個下述電波,該電波係相對於入射角為15度以上75度以下之任一入射波之強度,正規反射之出射波之強度(有時將其稱為「正規反射強度」)成為-30 dB以上0 dB以下。較佳為不論相對於入射角為15度以上75度以下中之哪個入射波,正規反射強度均成為-30 dB以上0 dB以下。The
更具體而言,較佳為於頻率28.5 GHz,正規反射強度相對於入射波成為-30 dB以上0 dB以下,更佳為於20 GHz以上60 GHz以下之整個頻帶中,正規反射強度相對於入射波成為-30 dB以上0 dB以下,進而較佳為於3 GHz以上300 GHz以下之整個頻帶中,正規反射強度相對於入射波成為-30 dB以上0 dB以下。More specifically, it is preferred that the regular reflection intensity be -30 dB or more and 0 dB or less with respect to the incident wave at a frequency of 28.5 GHz, and it is more preferred that the regular reflection intensity be -30 dB or more and 0 dB or less with respect to the incident wave in the entire frequency band from 20 GHz to 60 GHz, and it is further preferred that the regular reflection intensity be -30 dB or more and 0 dB or less with respect to the incident wave in the entire frequency band from 3 GHz to 300 GHz.
正規反射強度較佳為相對於入射波之衰減更小。相對於入射波之正規反射強度較佳為-25 dB以上0 dB以下,更佳為-22 dB以上0 dB以下,進而較佳為-20 dB以上0 dB以下,進而較佳為-15 dB以上0 dB以下。The regular reflection intensity is preferably smaller than the attenuation of the incident wave. The regular reflection intensity relative to the incident wave is preferably greater than -25 dB and less than 0 dB, more preferably greater than -22 dB and less than 0 dB, further preferably greater than -20 dB and less than 0 dB, and further preferably greater than -15 dB and less than 0 dB.
藉由使相對於入射波之正規反射強度為-30 dB以上,使得電波反射體11可於保持反射強度之狀態下反射電波。其結果為,接收部21可以具有實用性之強度接收電波。本說明書中之「反射強度」及「正規反射強度」意指反射點11a與測定點之間之距離為1 m之情形時之強度。又,正規反射強度係不使電波反射體11彎曲及曲折,而於平面狀之狀態下進行測定。By making the regular reflection intensity relative to the incident wave greater than -30 dB, the
如圖2所示,本實施方式之電波反射體11於俯視下為四邊形(包含正方形)。作為電波反射體11之一邊之長度L10,例如較佳為20 cm以上,更佳為100 cm以上,進而較佳為200 cm以上。另一方面,電波反射體11之一邊之長度L10之上限並無特別限制,例如為400 cm以下。若一邊之長度L10為20 cm以上,則容易以充分之強度反射電波。As shown in FIG. 2 , the
作為電波反射體11之形狀,並不限於四邊形,例如亦可為三角形、五邊形、六邊形、圓形、橢圓形等幾何學形狀,亦可為非幾何學形狀。於電波反射體11中,端緣間之距離中之最大值之尺寸較佳為20 cm以上400 cm以下。關於「端緣間之距離中之最大值之尺寸」,於電波反射體11為長方形之情形時,係指對角之尺寸,於電波反射體11為圓形之情形時,係指直徑之尺寸,於電波反射體11為橢圓形之情形時,係指長軸之長度。The shape of the
電波反射體11之厚度L1(圖3)較佳為0.01 mm以上,更佳為、0.05 mm以上,進而較佳為0.2 mm以上。另一方面,作為電波反射體11之厚度L1之上限,較佳為0.5 mm以下,更佳為0.4 mm以下。藉由使電波反射體11之厚度L1為0.01 mm以上,可在具有可撓性之同時保持強度。藉由使電波反射體11之厚度L1為0.5 mm以下,而在使電波反射體11彎曲時,不易彎折,結果導電體12不易發生應力集中。此處所述之「彎折」意指於電波反射體11之任一層中伴隨有塑性變形之彎曲。The thickness L1 (FIG. 3) of the
於對電波反射體11進行鉛筆硬度試驗之情形時,在對保護層15之表面負載為500 g之鉛筆硬度較佳為「F」以上,更佳為「H」以上,進而較佳為「4H」以上。本說明書所述之「鉛筆硬度試驗」係依據JIS K 5600-5-4(1999)之試驗。又,「表面負載為500 g」係指若於鉛筆硬度試驗時對表面施加之負載為500 g±10 g,則包含於其中。When the
又,電波反射體11較佳為於進行耐熱耐濕試驗後,保護層15之對被接著層之接著力之降低率為50%以下,更佳為45%以下,進而較佳為40%以下。本說明書中所述之「被接著層」意指直接接觸對象層之層。本實施方式中,保護層15之被接著層係接著層14。接著力之測定方法係藉由依據JIS K 6849(1994)之拉伸接著強度試驗進行測定。In addition, the
耐熱耐濕試驗係如下所述之試驗:將電波反射體11配置於調整為溫度60℃、濕度95%rh(相對濕度)之恆溫恆濕槽內靜置500小時後,將電波反射體11自恆溫恆濕槽內取出,於常溫靜置4小時後,確認性狀之變化。The heat and humidity resistance test is a test as follows: the
耐熱耐濕試驗後之電波反射體11之反射波之強度、與耐熱耐濕試驗前之電波反射體11之反射波之強度的差較佳為3 dB以內。此時之入射波之入射角θ1較佳為至少於15度以上75度以下之1個角度下滿足上述條件,更佳為於15度以上75度以下之角度範圍之所有角度滿足上述條件。此時之入射波之頻率較佳為3 GHz以上300 GHz以下。The difference between the intensity of the reflected wave of the
又,電波反射體11中,耐熱耐濕試驗後之表面電阻率較佳為100 Ω/□以下,更佳為50 Ω/□以下,進而較佳為20 Ω/□以下。藉由使耐熱耐濕試驗後之表面電阻率為100 Ω/□以下,使得電波反射體11即便於高溫高濕環境下放置長時間,亦不會損害反射強度,而可維持具有實用性之電波反射體11。In addition, the surface resistivity of the
又,耐熱耐濕試驗前之電波反射體11之表面電阻率較佳為0.003 Ω/□以上10 Ω/□以下,更佳為0.01 Ω/□以上9 Ω/□以下,進而較佳為0.02 Ω/□以上8 Ω/□以下。再者,本說明書中之表面電阻率只要無特別說明,便係指將電波反射體11載置於由平面所構成之載置面之狀態下所測得之值。本說明書中,表面電阻率係依據JIS K 6911而測定。In addition, the surface resistivity of the
耐熱耐濕試驗後相對於耐熱耐濕試驗前之、電波反射體11之表面電阻率之變化率較佳為20%以下,更佳為17%以下,進而較佳為15%以下。將耐熱耐濕試驗前之表面電阻率設為R1,並將耐熱耐濕試驗後之表面電阻率設為r2時,變化率r可根據r=(R1-r2)/R1×100而求出。The change rate of the surface resistivity of the
又,關於電波反射體11,使電波反射體11沿著具有曲率半徑200 mm之曲面之構件之表面彎曲之狀態前後的表面電阻率之變化率(亦稱為「彎曲時之表面電阻之變化率」)R可為-10%以上10%以下。彎曲時之表面電阻率之變化率R意指下述比率,即,相對於使電波反射體11變得平坦之狀態下之電波反射體11之表面電阻率R
1,使電波反射體11沿著具有曲率半徑200 mm之曲面之構件之表面彎曲之狀態下的表面電阻率R
2發生變化之比率。根據表面電阻率之變化率R=(R
2-R
1)/R
1×100而求出。
In addition, regarding the
電波之反射強度根據表面電阻率而變化。但是,由於電波反射體11之彎曲時之表面電阻率之變化率R為-10%以上10%以下,故而即便於使電波反射體11彎曲之狀態下,亦可與平坦狀態同樣地實現充分之電波之反射強度。The reflection intensity of radio waves varies according to the surface resistivity. However, since the change rate R of the surface resistivity when the
本說明書中,表面電阻率意指每1 cm 2之表面電阻。表面電阻率可使測定端子接觸導電薄膜層之表面,依據JIS K 6911藉由四端子法進行測定。再者,於利用樹脂片等實施了保護而未露出導電薄膜層之情形時,可使用非接觸式電阻測定器(Napson股份有限公司製造,商品名:EC-80P、或其同等品)藉由渦電流法進行測定。 In this specification, surface resistivity means the surface resistance per 1 cm2 . The surface resistivity can be measured by the four-terminal method in accordance with JIS K 6911 by bringing the measuring terminal into contact with the surface of the conductive film layer. In addition, when the conductive film layer is not exposed due to protection by a resin sheet or the like, it can be measured by the eddy current method using a non-contact resistance meter (manufactured by Napson Co., Ltd., trade name: EC-80P or its equivalent).
電波反射體11較佳為整體具有可見光穿透性。即,電波反射體11較佳為透明。導電層16、接著層14及保護層15可形成為具有可見光穿透性之材料及/或具有可見光穿透性之厚度。此處之「透明」意指能夠自另一側視認到位於電波反射體11之一側之物體,全光線穿透率可不為100%。「透明」包含半透明。又,電波反射體11可被著色。The
電波反射體11較佳為全光線穿透率為70%以上,更佳為75%以上,進而較佳為80%以上。本說明書中,「全光線穿透率」意指來自D65標準光源之光線之穿透率。全光線穿透率係依據JIS K 7375(2008)而測定。The
電波反射體11之彎曲模數較佳為0.05 GPa以上4 GPa以下。藉由使彎曲模數處於上述範圍內,而使得電波反射體11具有可撓性,可不使電波反射體11發生曲折或斷裂,而使電波反射體11彎曲並貼附於曲面或球面。彎曲模數係依據JIS K7171而測定。本說明書中,「可撓性」意指即便於常溫常壓下施加彎曲之力,亦能夠不發生斷裂或塑性變形而彎曲之性質。The bending modulus of the
電波反射體11較佳為縱向彈性模數為0.01 GPa以上80 GPa以下。藉由使縱向彈性模數處於上述範圍內,使得電波反射體11容易發生變形,可不使電波反射體11斷裂而使電波反射體11彎曲,從而貼附於曲率半徑為200 mm以上之曲面。縱向彈性模數係依據JIS K7127-1999而測定。The
本實施方式之電波反射體11至少具有能夠沿著曲率半徑為200 mm以上之曲面貼附之程度之可撓性,較佳為具有能夠沿著曲率半徑為100 mm以上之曲面貼附之程度之可撓性。The
電波反射體11可具有可塑性。可塑性意指如下性質:能夠藉由施加外壓而變形,於藉由加壓而賦予超過彈性極限之變形時,即便去掉力,亦維持變形之形狀。既可導電層16、接著層14及保護層15全部具有可塑性,又可導電層16、接著層14及保護層15中之至少1個具有可塑性。The
又,如圖1所示,電波反射體11較佳為於包含入射波A1與反射波之虛擬平面中,使反射波之接收角度位置相對於正規反射之反射波A2在-15度以上、+15度以下之角度範圍α內進行變化時,各接收角度位置處之反射波之強度之分佈之峰度成為-0.4以下。峰度更佳為-1.0以下,進而較佳為-1.1以下,進而更佳為-1.2以下。峰度之下限並無特別限定,例如為-0.5以上。虛擬平面上存在電波反射體11之反射面上之反射點11a、電波產生源20、及反射波之接收部21。峰度之測定係於使電波反射體11成為平面狀之狀態下進行。As shown in FIG1 , the
峰度係表示分佈偏離常態分佈何種程度之統計量,表示峰部之尖度與尾部之擴展度。如圖1所示,自電波產生源20輸出之電波相對於電波反射體11以入射角θ1入射,以出射角θ2進行正規反射。使接收部21之接收角度位置i相對於電波之正規反射之反射波A2,以反射點11a為中心每隔規定角度(例如每隔5度)在-15度以上+15度以下之角度範圍α內移動,測定反射強度x。接收部21之接收角度位置i位於以反射點11a為中心之圓弧上。將各接收角度位置i處之反射強度之值x
i(i:1、2、…、n)之平均值設為
, 將標準偏差設為s時,峰度可根據下式而求出。
Kurtosis is a statistic that indicates the degree to which a distribution deviates from a normal distribution. It indicates the sharpness of the peak and the spread of the tail. As shown in FIG1 , the radio wave output from the radio
於峰度為負值之情形時,表示各角度位置處之強度資料較常態分佈扁平之分佈、即資料自平均值附近分散且分佈之尾部擴展開之狀態,峰度之值越小,則分佈越扁平。本實施方式中,藉由將峰度設定為-0.4以下,而於相對於正規反射之反射波為±15度之角度範圍α內,與接收角度位置對應之反射強度之差變小。When the kurtosis is a negative value, it indicates that the intensity data at each angle position is flatter than the normal distribution, that is, the data is dispersed near the average value and the tail of the distribution is expanded. The smaller the kurtosis value, the flatter the distribution. In this embodiment, by setting the kurtosis to less than -0.4, the difference in reflection intensity corresponding to the receiving angle position becomes smaller within the angle range α of ±15 degrees relative to the reflected wave of the regular reflection.
電波反射體11較佳為耐熱耐濕試驗後之黃色指數與耐熱耐濕試驗前之黃色指數之差、即黃變度為3以下。黃色指數亦稱為黃度,意指色相自無色或白色偏向黃色方向之程度。黃色指數可藉由依據JIS K 7373之方法而求出。The
以下,更詳細地對電波反射體11之各層進行說明。以下說明中,將複數層重疊之方向定義為「上下方向」。又,於沿著上下方向觀察電波反射體11之情形時,將相互正交之2個方向定義為「縱向」及「橫向」。但是,該等方向之定義僅用於進行說明,並非特定用途。又,各圖僅為示意性圖,並非表示嚴格之縮尺。The following will describe each layer of the
(導電層16) 導電層16係具有導電體12之層。導電層16具備基材13、及用以反射電波之導電體12。(Conductive layer 16) The
(基材13) 基材13支持導電體12。本實施方式中,基材13之外形於俯視下為四邊形(更具體而言為正方形)。基材13之厚度遍及整面地均勻。但是,基材13之厚度亦可不均勻,亦可形成為三維形狀。作為三維形狀,例如可列舉:楔形、局部具有球面之形狀、具有凹凸形狀之形狀等。(Substrate 13) The
作為基材13,例如可列舉:合成樹脂、FRP(Fiber Reinforced Plastics)、碳、玻璃等。作為合成樹脂,例如可列舉由PET(聚對苯二甲酸乙二酯)、聚乙烯、聚丙烯、聚氯乙烯、聚苯乙烯、聚甲基丙烯酸甲酯、聚酯、聚甲醛、聚醯胺、聚苯醚、偏二氯乙烯、聚乙酸乙烯酯、聚乙烯縮醛、AS樹脂、ABS樹脂、丙烯酸樹脂、氟樹脂、尼龍樹脂、聚縮醛樹脂、聚碳酸酯樹脂、聚醯胺樹脂、聚胺酯樹脂(polyurethane resin)所組成之群中之一種以上。作為基材,亦可為該等合成樹脂之複合材料。本實施方式之基材13由PET片所構成。As the
作為基材13之厚度L2,例如較佳為5 μm以上,更佳為10 μm以上,進而較佳為20 μm以上。另一方面,作為基材13之厚度L2之上限值,例如較佳為500 μm以下,更佳為130 μm以下,進而較佳為100 μm以下。The thickness L2 of the
基材13較佳為具有可撓性。作為基材13之縱向彈性模數,例如較佳為0.01 GPa以上,更佳為1 GPa以上,進而較佳為8 GPa以上。另一方面,作為基材13之縱向彈性模數之上限,例如較佳為80 GPa以下,更佳為30 GPa以下,進而較佳為20 GPa以下。The
(導電體12) 導電體12係反射電波之導體。導電體12形成於基材13之上表面。作為將導電體12形成於基材13之上表面之方法,例如可列舉:將在薄膜狀介電體中嵌埋有導電體12之薄膜體積層於基材13之方法;不使用介電體而於基材13上形成導電體12之圖案之方法。關於將導電體12形成於基材13之上表面之方法,將於下文詳細敍述。(Conductor 12) The
此處所使用之介電體較佳為相對介電常數為1.5以上,更佳為2.5以上,進而較佳為3以上。作為介電體,例如可列舉:丙烯酸樹脂、PET(聚對苯二甲酸乙二酯)、丙烯酸與空氣之混合物等。若相對介電常數為1.5以上,則介電體中之電磁波之波長比介電體外之電磁波之波長短,因此可使反射強度變強。The dielectric used here preferably has a relative dielectric constant of 1.5 or more, more preferably 2.5 or more, and further preferably 3 or more. Examples of dielectrics include acrylic resin, PET (polyethylene terephthalate), and a mixture of acrylic acid and air. If the relative dielectric constant is 1.5 or more, the wavelength of the electromagnetic wave in the dielectric is shorter than the wavelength of the electromagnetic wave outside the dielectric, thereby increasing the reflection intensity.
導電體12由導體所構成。作為導電體12,例如可列舉:銀、金、銅、鉑、鋁、鈦、聚矽氧、氧化銦錫、及合金(例如含有鎳、鉻及鉬之合金)中之一種以上等。作為含有鎳、鉻及鉬之合金,例如可列舉:赫史特合金B-2、B-3、C-4、C-2000、C-22、C-276、G-30、N、W、X等各種等級。The
作為導電體12之厚度L3,較佳為20 nm以上,更佳為30 nm以上,進而較佳為100 nm以上。另一方面,作為導電體12之厚度L3之上限值,較佳為10 μm以下,更佳為5 μm以下,進而較佳為4 μm以下。若導電體12之厚度L3為20 nm以上,則可確保適當之電波強度。The thickness L3 of the
如圖4(A)所示,導電體12具備第1導電部4(以細線表示)、及第2導電部5(以粗實線表示)。本實施方式之導電體12中,第1導電部4與第2導電部5形成於同一平面上。其中,亦如下述變化例中所說明,第1導電部4與第2導電部5可在與導電層16正交之方向形成於不同之位置。As shown in FIG. 4 (A), the
此處,於圖4(B)中示出用以說明本實施方式之導電體12之示意圖。圖4(B)示出了圖4(A)之B部分之示意放大圖。第1導電部4具有複數個第1包圍部41。第1導電部4如圖4(B)所示,複數個第1包圍部41以一定之間距反覆形成。各第1包圍部41包圍作為未形成有導電體12之區域之第1區域R1。第1包圍部41由線狀導體所構成。第1包圍部41之線寬L6較佳為0.3 μm以上10 μm以下,更佳為0.3 μm以上5 μm以下,進而較佳為0.4 μm以上1 μm以下。Here, a schematic diagram of the
本實施方式之第1包圍部41形成為由平行之2個第1線狀體411、與平行之2個第2線狀體412所構成之四邊形(更詳細為正方形)。第1線狀體411與第2線狀體412相互正交。第1包圍部41在周圍方向連續,在整個周圍方向均未斷離。即,2個第1線狀體411之兩端分別連接有鄰接之第2線狀體412。The first surrounding portion 41 of the present embodiment is formed as a quadrilateral (more specifically, a square) formed by two parallel first linear bodies 411 and two parallel second linear bodies 412. The first linear body 411 and the second linear body 412 are orthogonal to each other. The first surrounding portion 41 is continuous in the circumferential direction and is not disconnected in the entire circumferential direction. That is, both ends of the two first linear bodies 411 are respectively connected to the adjacent second linear body 412.
本實施方式中,相鄰之第1區域R1之間之線狀體411、412於相鄰之第1區域R1中相互共有。即,包圍1個第1區域R1之第1包圍部41之一部分構成了包圍鄰接之其他第1區域R1之第1包圍部41之一部分。如此,本實施方式之第1導電部4中,複數個第1包圍部41在縱向與橫向以一定之間距反覆形成,具有格子狀圖案。In this embodiment, the linear bodies 411 and 412 between adjacent first regions R1 are mutually shared in the adjacent first regions R1. That is, a portion of the first enclosing portion 41 surrounding one first region R1 constitutes a portion of the first enclosing portion 41 surrounding another adjacent first region R1. In this way, in the first conductive portion 4 of this embodiment, a plurality of first enclosing portions 41 are repeatedly formed at a certain interval in the longitudinal direction and the transverse direction, and have a lattice pattern.
第1包圍部41之周長較佳為對象電波之波長以下之長度。但是,於導電體12被嵌埋於薄膜狀介電體內之情形時(即,於第1包圍部41內填充有介電體之情形時),第1包圍部41之周長更佳為對象電波之波長之5/6倍以下之長度。The perimeter of the first surrounding portion 41 is preferably less than the wavelength of the target radio wave. However, when the
例如於第1包圍部41之周長為對象電波之波長以下之長度之情形時,第1包圍部41之周長可如下例示。於以3 GHz以上5 GHz以下之範圍之頻率之入射波作為對象之情形時,第1包圍部41之周長較佳為1 cm以上10 cm以下,更佳為2 cm以上9 cm以下,進而較佳為4 cm以上8 cm以下。又,於以25 GHz以上30 GHz以下之範圍之頻率之入射波作為對象之情形時,第1包圍部41之周長較佳為1 mm以上12 mm以下,更佳為2 mm以上10 mm以下,進而較佳為5 mm以上8 mm以下。又,於以100 GHz以上300 GHz以下之範圍之頻率之入射波作為對象之情形時,第1包圍部41之周長較佳為0.25 mm以上3 mm以下,更佳為0.5 mm以上2 mm以下,進而較佳為0.75 mm以上1 mm以下。For example, when the circumference of the first enclosure 41 is a length less than the wavelength of the target radio wave, the circumference of the first enclosure 41 can be illustrated as follows. When the incident wave with a frequency in the range of 3 GHz to 5 GHz is the target, the circumference of the first enclosure 41 is preferably 1 cm to 10 cm, more preferably 2 cm to 9 cm, and further preferably 4 cm to 8 cm. Furthermore, when the incident wave with a frequency in the range of 25 GHz to 30 GHz is the target, the circumference of the first enclosure 41 is preferably 1 mm to 12 mm, more preferably 2 mm to 10 mm, and further preferably 5 mm to 8 mm. Furthermore, when the incident wave with a frequency in the range of 100 GHz to 300 GHz is targeted, the circumference of the first surrounding portion 41 is preferably 0.25 mm to 3 mm, more preferably 0.5 mm to 2 mm, and further preferably 0.75 mm to 1 mm.
第2導電部5具有複數個第2包圍部51。第2包圍部51包圍作為未形成有導電體12之區域之第2區域R2。第2包圍部51由線狀導體所構成。第2包圍部51之線寬L8較佳為0.3 μm以上10 μm以下,更佳為0.3 μm以上5 μm以下,進而較佳為0.4 μm以上1 μm以下。再者,於圖4(A)(B)中,第2包圍部51之線寬被描繪成比第1包圍部41之線寬粗,其僅為了便於說明而表現,實際上形成為相同之寬度。但是,第2包圍部51之線寬L8亦可形成為與第1包圍部41之線寬L6不同之寬度。The second conductive portion 5 has a plurality of second surrounding portions 51. The second surrounding portion 51 surrounds the second region R2 which is a region where the
第2包圍部51可相對於第1包圍部41為相同形狀相同大小,亦可為不同之形狀,亦可為不同之大小。本實施方式之第2包圍部51相對於第1包圍部41形成為相同形狀相同大小。第2包圍部51形成為由平行之2個第3線狀體511、及平行之2個第4線狀體512所構成之四邊形(更具體而言為正方形)。第3線狀體511與第4線狀體512相互正交。第2包圍部51在周圍方向連續,在整個周圍方向均未斷離。即,2個第3線狀體511之兩端分別連接有鄰接之第4線狀體512。The second enclosing portion 51 may be the same shape and size as the first enclosing portion 41, or may be a different shape or a different size. The second enclosing portion 51 of the present embodiment is formed in the same shape and size as the first enclosing portion 41. The second enclosing portion 51 is formed as a quadrilateral (more specifically, a square) formed by two parallel third linear bodies 511 and two parallel fourth linear bodies 512. The third linear bodies 511 and the fourth linear bodies 512 are orthogonal to each other. The second enclosing portion 51 is continuous in the circumferential direction and is not disconnected in the entire circumferential direction. That is, the two ends of the two third linear bodies 511 are respectively connected to the adjacent fourth linear bodies 512.
第2包圍部51所包圍之第2區域R2與相鄰之複數個第1包圍部41之第1區域R1之一部分重疊。即,第2區域R2跨及相鄰之複數個第1區域R1。本實施方式中,第2區域R2與對1個第1區域R1組合在橫向、縱向及斜方向鄰接之3個第1區域R1、合計4個第1區域R1(以下,有時稱為「相鄰之4個第1區域R1」)重疊。第2區域R2之重心配置於與相鄰之4個第1區域R1之頂點重疊之位置。再者,第2區域R2之重心亦可不配置於與相鄰之4個第1區域R1之頂點重疊之位置。The second region R2 surrounded by the second enclosing portion 51 overlaps a portion of the first regions R1 of the adjacent plurality of first enclosing portions 41. That is, the second region R2 spans across the adjacent plurality of first regions R1. In the present embodiment, the second region R2 overlaps with a combination of three first regions R1 adjacent to one first region R1 in the transverse, longitudinal and oblique directions, a total of four first regions R1 (hereinafter sometimes referred to as "four adjacent first regions R1"). The center of gravity of the second region R2 is arranged at a position overlapping with the vertices of the four adjacent first regions R1. Furthermore, the center of gravity of the second region R2 may not be arranged at a position overlapping with the vertices of the four adjacent first regions R1.
第1包圍部41與第2包圍部51於投影至與導電層16平行之虛擬投影面之情形時,不具有彼此共有之部分。本說明書中所述之「不具有彼此共有之部分」意指包圍第1區域R1之線、具有寬度之線(即面)等構成了包圍第2區域R2之線、面等之一部分。本實施方式中,第1包圍部41與第2包圍部51於投影至與導電層16平行之虛擬投影面之情形時,第1包圍部41中所含之線狀體均非與第2包圍部51中所含之全部線狀體接觸且平行之線狀體。因此,於將第1包圍部41與第2包圍部51投影至與導電層16平行之虛擬投影面之情形時,第1包圍部41之一線狀體與第2包圍部51之一線狀體交叉之情況包含於「不具有彼此共有之部分」中。The first enclosing portion 41 and the second enclosing portion 51 do not have a common part when projected onto a virtual projection plane parallel to the
第2包圍部51相對於1個第1包圍部41在複數個部位(此處為2個部位)交叉。本實施方式中,第2包圍部51與第1包圍部41在第2包圍部51與第1包圍部41之交叉點導通,但於第1導電部4與第2導電部5位於不同之高度位置之情形時,亦可彼此不導通。The second enclosing portion 51 intersects with the first enclosing portion 41 at a plurality of locations (two locations in this example). In this embodiment, the second enclosing portion 51 and the first enclosing portion 41 are electrically connected at the intersection of the second enclosing portion 51 and the first enclosing portion 41, but when the first conductive portion 4 and the second conductive portion 5 are located at different heights, they may not be electrically connected to each other.
於第1導電部4與第2導電部5位於不同之高度位置之情形時,第1導電部4與第2導電部5之間之最小距離較佳為0.05 μm以上200 μm以下,更佳為1 μm以上20 μm以下,進而較佳為5 μm以上13 μm以下。When the first conductive portion 4 and the second conductive portion 5 are located at different heights, the minimum distance between the first conductive portion 4 and the second conductive portion 5 is preferably 0.05 μm to 200 μm, more preferably 1 μm to 20 μm, and further preferably 5 μm to 13 μm.
第2包圍部51之周長較佳為對象電波之波長以下之長度。但是,於導電體12被嵌埋於薄膜狀介電體內之情形時(即,於第2包圍部內填充有介電體之情形時),第2包圍部51之周長較佳為對象電波之波長之5/6倍以下之長度。The circumference of the second surrounding portion 51 is preferably less than the wavelength of the target radio wave. However, when the
相鄰之第2包圍部51之重心間之距離L9較佳為對象電波之波長之0.015倍以上之長度。於第2包圍部51內填充有介電體之情形時,重心間之距離L9較佳為對象電波之波長之0.015倍以上之長度,於第2包圍部51內填充有介電體之情形時,重心間之距離L9更佳為0.019倍以上。The distance L9 between the centers of gravity of the adjacent second enclosures 51 is preferably 0.015 times or more of the wavelength of the target radio wave. When the second enclosure 51 is filled with a dielectric, the distance L9 between the centers of gravity is preferably 0.015 times or more of the wavelength of the target radio wave, and when the second enclosure 51 is filled with a dielectric, the distance L9 between the centers of gravity is more preferably 0.019 times or more.
例如於重心間之距離L9為對象電波之波長之0.015倍以上之長度之情形時,重心間之距離L9可如下例示。於以3 GHz以上5 GHz以下之範圍之頻率之入射波作為對象之情形時,重心間之距離L9較佳為0.15 cm以上10 cm以下,更佳為0.2 cm以上8 cm以下,進而較佳為0.3 cm以上5 cm以下。又,於以25 GHz以上30 GHz以下之範圍之頻率之入射波作為對象之情形時,重心間之距離L9較佳為0.18 mm以上12 mm以下,更佳為0.27 mm以上10 mm以下,進而較佳為0.36 mm以上8 mm以下。又,於以100 GHz以上300 GHz以下之範圍之頻率之入射波作為對象之情形時,重心間之距離L9較佳為0.045 mm以上3 mm以下,更佳為0.09 mm以上2 mm以下,進而較佳為0.15 mm以上1 mm以下。For example, when the distance L9 between the centers of gravity is 0.015 times or more of the wavelength of the target radio wave, the distance L9 between the centers of gravity can be illustrated as follows. When the incident wave with a frequency in the range of 3 GHz to 5 GHz is the target, the distance L9 between the centers of gravity is preferably 0.15 cm to 10 cm, more preferably 0.2 cm to 8 cm, and further preferably 0.3 cm to 5 cm. Furthermore, when the incident wave with a frequency in the range of 25 GHz to 30 GHz is the target, the distance L9 between the centers of gravity is preferably 0.18 mm to 12 mm, more preferably 0.27 mm to 10 mm, and further preferably 0.36 mm to 8 mm. Furthermore, when an incident wave with a frequency in the range of 100 GHz to 300 GHz is targeted, the distance L9 between the centers of gravity is preferably 0.045 mm to 3 mm, more preferably 0.09 mm to 2 mm, and further preferably 0.15 mm to 1 mm.
相鄰之第2包圍部51可相互接觸,亦可相互分離。本實施方式中,相鄰之第2包圍部51相互分離。The adjacent second surrounding parts 51 may be in contact with each other or separated from each other. In this embodiment, the adjacent second surrounding parts 51 are separated from each other.
第1區域R1中之邊緣之間之最大長度L7設定為大於可見光線之波長,且小於由電波反射體11反射之電波之波長。第1區域R1之邊中之最大長度較佳為設定為2 μm以上10 cm以下,更佳為20 μm以上1 cm以下,進而較佳為25 μm以上1 mm以下,進而較佳為30 μm以上250 μm以下。藉此,可使最大長度L7大於可見光線之波長,且小於由電波反射體11反射之電波之波長。The maximum length L7 between the edges in the first region R1 is set to be greater than the wavelength of visible light and less than the wavelength of the radio wave reflected by the
導電層16之厚度(L2+L3)中,基材13之厚度占主導地位。作為導電層16之厚度(L2+L3),例如較佳為5.02 μm以上,更佳為10 μm以上,進而較佳為20 μm以上。另一方面,作為導電層之厚度(L2+L3)之上限值,例如較佳為500.3 μm以下,更佳為130 μm以下,進而較佳為100 μm以下。The thickness of the
導電體12之表面粗糙度Sa並無特別限定,較佳為1 μm以上7 μm以下,更佳為1.03 μm以上6.72 μm以下。若表面粗糙度Sa處於該範圍內,則容易使電波漫反射。The surface roughness Sa of the
表面粗糙度Sa係利用ISO 25178之算術平均高度而求出,依據ISO 25178而測定。可使用雷射顯微鏡(製品名VK-X1000/1050,KEYENCE公司製造,或其同等品),於導電體12之表面之複數個部位測定表面粗糙度,算出所獲得之測定值之平均值,藉此求出導電體12之表面粗糙度Sa。The surface roughness Sa is obtained by using the arithmetic mean height of ISO 25178 and is measured in accordance with ISO 25178. The surface roughness Sa of the
藉由如此將導電體設為由第1導電部4與第2導電部5組合而成之形狀,能夠提昇電波之擴散性。作為其原因之一,認為藉由將第1導電部4與第2導電部5加以組合,而如圖4(C)所示,形成開口面積相對較小之部分(第1開口A1)、與大於第1開口之部分(第2開口A2)。其原因在於,反射至形成第1開口A1之導電體12之電波、與反射至形成第2開口A2之導電體12之電波中,反射角產生少許差異,因此反射面之反射有少許不均勻,正規反射強度較強之部分擴大。藉此,認為電波之擴散性提昇。By setting the conductor to a shape composed of the first conductive part 4 and the second conductive part 5, the diffusion of radio waves can be improved. One of the reasons is that by combining the first conductive part 4 and the second conductive part 5, a portion with a relatively small opening area (first opening A1) and a portion larger than the first opening (second opening A2) are formed as shown in FIG4 (C). The reason is that the reflection angle of the radio wave reflected to the
本說明書中所述之「電波之擴散性」意指正規反射強度、與正規反射之周圍之電波強度之差落在一定範圍內。正規反射之周圍之電波強度例如包含將正規反射設為0°時之±15°之位置處之電波強度。於正規反射強度、與正規反射之周圍之電波強度之差的絕對值較小之情形時,可評價為電波之擴散性較高。此處所述之「一定範圍」較佳為5 dB,更佳為4.5 dB,進而較佳為4 dB。The "radio wave diffusivity" described in this manual means that the difference between the regular reflection intensity and the radio wave intensity around the regular reflection falls within a certain range. The radio wave intensity around the regular reflection includes, for example, the radio wave intensity at a position of ±15° when the regular reflection is set to 0°. When the absolute value of the difference between the regular reflection intensity and the radio wave intensity around the regular reflection is small, it can be evaluated that the radio wave diffusivity is high. The "certain range" mentioned here is preferably 5 dB, more preferably 4.5 dB, and even more preferably 4 dB.
(導電體12之形成方法) 其次,對導電體12之形成方法進行說明。以下所示之方法僅為用以說明導電體12之形成方法之示例。(Method for Forming Conductor 12) Next, a method for forming
(1)於基材13上形成導電體12之圖案之方法 如圖5(A)所示,於基材13上塗佈光阻劑61。繼而,用形成有導電體12之圖案之光罩(未圖示)來覆蓋光阻劑61,藉由照射紫外線而進行曝光(圖5(B)),利用顯影液去除感光部分62。(1) Method for forming a pattern of the
繼而,如圖5(C)所示,於去除光阻劑61後之部分蒸鍍金屬63,如圖5(D)所示,去除光阻劑61,藉此於基材13上形成導電體12之圖案。於該情形時,光罩較佳為形成有由第1導電部4與第2導電部5兩者組合而成之圖案。Next, as shown in FIG5(C), metal 63 is partially evaporated after removing the photoresist 61, and as shown in FIG5(D), the photoresist 61 is removed to form a pattern of the
再者,此處,以利用正型光微影法之例進行了說明,但亦可使用負型光微影法。Furthermore, here, although the positive photolithography method is used as an example for explanation, the negative photolithography method may also be used.
(2)將薄膜體積層於基材13之方法 作為與將包含第1導電部4與第2導電部5之導電體12直接形成於基材13之方法不同之方法,可列舉將薄膜體積層於基材13之方法。薄膜體例如可藉由如圖6(A)~(E)所示之方法而形成。(2) Method of Laminating a Thin Film on the
首先,如圖6(A)所示,準備以凸部71之形式形成有與第1導電部4對應之圖案之模具7。本實施方式中,凸部71形成為於俯視下為格子狀。然後,以與模具7對向之方式配置基材13。First, as shown in FIG6(A), a mold 7 is prepared in which a pattern corresponding to the first conductive portion 4 is formed in the form of protrusions 71. In this embodiment, the protrusions 71 are formed in a grid shape in a plan view. Then, the
繼而,如圖6(B)所示,於模具7與基材13之間填充介電體8。介電體8較佳為光硬化性樹脂。然後,使所填充之介電體8硬化,自介電體8取下模具7(圖6(C))。Next, as shown in FIG6(B), a dielectric 8 is filled between the mold 7 and the
繼而,如圖6(D)所示,對介電體8實施無電解鍍覆,於所形成之凹部81填充金屬63。Next, as shown in FIG. 6(D) , the dielectric 8 is electrolessly plated, and the formed recess 81 is filled with the metal 63 .
然後,關於第2導電部5,使用以凸部之形式形成有與第2導電部5對應之圖案之模具,執行圖6(A)~(D)之順序,製成第2導電部5。然後,將第2導電部5自基材13剝離。將包含自基材13剝離之第2導電部5之薄膜體重疊於圖6(D)中所製作之第1導電部4之一面,藉此能夠形成具有第1導電部4及第2導電部5之導電層16。Then, regarding the second conductive portion 5, a mold having a pattern corresponding to the second conductive portion 5 formed in the form of a convex portion is used to perform the sequence of FIG. 6 (A) to (D) to form the second conductive portion 5. Then, the second conductive portion 5 is peeled off from the
再者,此處,將包含第2導電部5之薄膜體重疊於第1導電部之上,例如亦可將包含第2導電部之薄膜體重疊於第1導電部4之基材13。即,第1導電部4與第2導電部5亦可隔著基材13而位於兩側。總而言之,只要於投影至與導電層16平行之投影面之情形時,可形成包含第1導電部4與第2導電部5之導電體12之圖案即可。Furthermore, here, the thin film body including the second conductive part 5 is overlapped on the first conductive part, for example, the thin film body including the second conductive part may be overlapped on the
(導電體12之圖案之變化例) 導電體12之圖案並不限於如實施方式之格子狀,例如亦可為如圖7(A)至(E)所示之圖案。(Variations of the Pattern of the Conductor 12) The pattern of the
一變化例中,導電體12可為如圖7(A)所示之圖案。第1導電部4形成為砌磚狀,第2導電部5形成為三角形或倒三角形。第1導電部4係在橫向,複數個第1包圍部41排列在一直線上。又,第1導電部4係在縱向,相鄰之第1包圍部41相互錯開。即,複數個第1包圍部41在縱向及橫向(即,與各邊正交之方向)上以一定之間距反覆形成。In a variation, the
第2包圍部51具有三角形之第2包圍部51a、與倒三角形之第2包圍部51b。第2區域R2跨及相鄰之3個第1區域R1。The second surrounding portion 51 includes a triangular second surrounding portion 51a and an inverted triangular second surrounding portion 51b. The second region R2 spans over three adjacent first regions R1.
一變化例中,導電體12可為如圖7(B)所示之圖案。第1導電部4之第1包圍部41形成為三角形,第2導電部5之第2包圍部51形成為圓形。本變化例中,第1包圍部41具備三角形之第1包圍部41a、與倒三角形之第1包圍部41b。第1包圍部41a及第1包圍部41b在與各邊正交之方向交替地配置。如此,第1導電部4可混合存在有形狀不同之第1包圍部41a、41b。但是,構成相同形狀之第1包圍部41彼此在與各邊正交之方向,以一定之間距反覆形成。In a variation, the
第2導電部5具有圓形之複數個第2包圍部51。各第2包圍部51包圍第2區域R2。第2區域R2跨及相鄰之6個第1區域R1之一部分。The second conductive portion 5 has a plurality of circular second surrounding portions 51. Each second surrounding portion 51 surrounds the second region R2. The second region R2 extends over a portion of the six adjacent first regions R1.
再者,第1包圍部41為正三角形,例如亦可為等腰三角形或3邊之長度不同之三角形。Furthermore, the first surrounding portion 41 is an equilateral triangle, for example, it may also be an isosceles triangle or a triangle with three sides of different lengths.
一變化例中,導電體12可為如圖7(C)所示之圖案。第1導電部4之第1包圍部41形成為正六邊形。第1導電部4中,複數個第1包圍部41在與各邊正交之方向,以一定之間距反覆形成。In a variation, the
第2導電部5具有複數個第2包圍部51。第2包圍部51形成為六邊形,係與第1包圍部41相同之形狀。但是,複數個第2包圍部51形成為以某1個第1包圍部41之圖心為中心使第1導電部4旋轉90°而成之形狀。此種第2區域R2亦跨及相鄰之複數個第1區域R1。The second conductive portion 5 has a plurality of second surrounding portions 51. The second surrounding portion 51 is formed in a hexagonal shape, which is the same shape as the first surrounding portion 41. However, the plurality of second surrounding portions 51 are formed in a shape obtained by rotating the first conductive portion 4 by 90° with the centroid of a certain first surrounding portion 41 as the center. Such a second region R2 also spans over the plurality of adjacent first regions R1.
一變化例中,導電體12可為如圖7(D)所示之圖案。本變化例中,第1包圍部41具備圓形之第1包圍部41a、及各邊由圓弧所形成之大致三角形之第1包圍部41b、41c。各第1包圍部41a、41b、41c包圍第1區域R1。第1導電部4中,各個複數個第1包圍部41a、41b、41c在縱向及橫向,以一定之間距反覆形成。In a variation, the
第2導電部5具有複數個第2包圍部51。本變化例中,第2包圍部51具備圓形之第1包圍部51a、及各邊由圓弧所形成之大致三角形之第2包圍部51b、51c。第2導電部5形成為以1個第1包圍部41之圖心為中心使第1導電部4旋轉90°而成之形狀。此種第2區域R2亦跨及相鄰之複數個第1區域R1。The second conductive portion 5 has a plurality of second surrounding portions 51. In this variation, the second surrounding portion 51 has a circular first surrounding portion 51a and substantially triangular second surrounding portions 51b and 51c whose sides are formed by arcs. The second conductive portion 5 is formed into a shape obtained by rotating the first conductive portion 4 by 90° with the centroid of one first surrounding portion 41 as the center. Such a second region R2 also spans over a plurality of adjacent first regions R1.
一變化例中,導電體12可為如圖7(E)所示之圖案。本變化例中,第1導電部4形成為格子狀,第2導電部5形成為圓形。第1導電部4中,複數個第1包圍部41在縱向及橫向排列。複數個第1包圍部41在縱向及橫向,以一定之間距反覆形成。In a variation, the
第2導電部5具有圓形之複數個第2包圍部51。各第2包圍部51包圍第2區域R2。第2區域R2跨及相鄰之4個第1區域R1之一部分。複數個第2包圍部51之中心全部位於第1包圍部41之角(第1導電部4之格子之交點)。相鄰之第2包圍部51具有接點,但不具有彼此共有之部分。The second conductive portion 5 has a plurality of circular second enclosing portions 51. Each second enclosing portion 51 encloses a second region R2. The second region R2 spans a portion of the four adjacent first regions R1. The centers of the plurality of second enclosing portions 51 are all located at the corners of the first enclosing portion 41 (the intersection of the grids of the first conductive portion 4). The adjacent second enclosing portions 51 have a contact point, but do not have a common portion with each other.
圖7(B)、圖7(D)及圖7(E)之變化例中,第1包圍部41及第2包圍部51中之至少一者為圓形。若如此,第1包圍部41及第2包圍部51之至少一者為圓形,則可使俯視下對於電波反射體11之入射方向對反射強度所產生之影響變小。換言之,於該情形時,不論於俯視下電波自哪個方向入射至電波反射體11,亦可使與入射方向對應之擴散性之變動變小。In the variation examples of FIG. 7 (B), FIG. 7 (D) and FIG. 7 (E), at least one of the first surrounding portion 41 and the second surrounding portion 51 is circular. If at least one of the first surrounding portion 41 and the second surrounding portion 51 is circular, the effect of the incident direction on the reflection intensity of the
(接著層14) 接著層14設置於導電層16與保護層15之間,將導電層16與保護層15加以接著。作為接著層14,較佳為遍及導電層16與保護層15之間之整面而設置,但亦可僅設置於導電層16與保護層15之間之一部分。作為接著層14,例如可列舉:合成樹脂、橡膠製之黏著片等。作為合成樹脂,例如可列舉:丙烯酸樹脂、或聚矽氧樹脂、聚乙烯醇樹脂等。作為接著層14,可藉由在導電層與保護層之間填充具有流動性之接著劑並使其硬化而構成,亦可將具有黏著面之黏著片配置於導電層16與保護層15之間。(Adhesive layer 14) The
接著層14之厚度L4較佳為2 μm以上,更佳為5 μm以上,進而較佳為10 μm以上。作為接著層14之厚度L4之上限,較佳為250 μm以下,更佳為150 μm以下,進而較佳為100 μm以下。The thickness L4 of the
又,接著層14較佳為羥值為5 mgKOH/g以上,更佳為8 mgKOH/g以上,進而較佳為30 mgKOH/g以上,進而較佳為90 mgKOH/g以上。另一方面,接著層14之羥值之上限較佳為120 mgKOH/g以下。若接著層14之羥值為5 mgKOH/g以上,則有於高溫高濕環境下接著層14不易發泡及/或變白之優點。本說明書中,羥值係藉由依據JIS K 1557之試驗方法而測定。Furthermore, the hydroxyl value of the
又,接著層14之酸值較佳為50 mgKOH/g以下,更佳為45 mgKOH/g以下,進而較佳為30 mgKOH/g以下,進而較佳為10 mgKOH/g以下。另一方面,接著層14之酸值之下限較佳為0.1 mgKOH/g以上。若接著層14之酸值為50 mgKOH/g以下,則可防止導電體12腐蝕,可提高電波反射性之經時性穩定性。本說明書中,酸值係藉由依據JIS K 2501之試驗方法而測定。Furthermore, the acid value of the
接著層14較佳為不含有紫外線吸收劑。若接著層14不含有紫外線吸收劑,則有容易將接著層14調整為無色透明之優點。此處,「不含有」不僅包括完全不含有紫外線吸收劑之情形,亦包括接著層14含有無損無色透明之程度之少許量之情形。The
接著層14較佳為使用介電損耗正切(tanδ)為0.018以下之材料。介電損耗正切之值越低越佳。作為介電損耗正切之下限值,例如可列舉0.0001以上。藉由使用介電損耗正切為0.018以下之接著層14,使得電波反射體11中之電波之電能損耗變少,可進一步增強反射強度。The
又,接著層14之合成樹脂材料較佳為相對介電常數根據電場之頻率而變化者。相對介電常數係指介質(本實施方式中為合成樹脂材料)之介電常數與真空之介電常數之比。藉由使相對介電常數根據電場而變化,可提高特定頻率之電場中之反射波之強度。相對介電常數較佳為於1.5以上7以下之間進行變化,更佳為於1.8以上6.5以下之間進行變化。Furthermore, the synthetic resin material of the
(保護層15) 保護層15覆蓋導電層16之至少一面,保護導電層16。本實施方式之保護層15於俯視下具有與基材13對應之大小。作為保護層15,例如可列舉合成樹脂製之片(薄膜)等。作為合成樹脂,例如可列舉選自由PET(聚對苯二甲酸乙二酯)、COP(環烯烴聚合物)、聚乙烯、聚丙烯、聚氯乙烯、聚苯乙烯、聚甲基丙烯酸甲酯、聚酯、聚甲醛、聚醯胺、聚苯醚、偏二氯乙烯、聚乙酸乙烯酯、聚乙烯縮醛、AS樹脂、ABS樹脂、丙烯酸樹脂、氟樹脂、尼龍樹脂、聚縮醛樹脂、聚碳酸酯樹脂、聚醯胺樹脂、聚胺酯樹脂所組成之群中之一種以上。(Protective layer 15) The
保護層15之厚度L5較佳為20 μm以上,更佳為38 μm以上,進而較佳為50 μm以上。另一方面,作為保護層15之厚度L5之上限值,較佳為200 μm以下,更佳為150 μm以下。The thickness L5 of the
於僅對保護層15進行了鉛筆硬度試驗之情形時,在對保護層15之表面負載為500 g之鉛筆硬度較佳為「4B」以上,更佳為「B」以上,進而較佳為「F」以上。若於僅保護層15之鉛筆硬度試驗中為「4B」以上,則能夠保護導電體12。又,若於僅保護層15之鉛筆硬度試驗中為「F」以上,則可進一步堅固地保護導電體12。When only the
保護層15在溫度40℃、濕度90%rh(相對濕度)之透濕度較佳為20 g/m
2・24 h以下,更佳為16 g/m
2・24 h以下,進而較佳為12 g/m
2・24 h以下,進而較佳為10 g/m
2・24 h以下。若保護層15在溫度40℃、濕度90%rh(相對濕度)之透濕度為20 g/m
2・24 h以下,則有導電層16不易腐蝕、導電層16之表面電阻率不易上升之優點。本說明書中所述之「透濕度」係藉由依據JIS Z 0208(1976)之試驗方法而測定。
The moisture permeability of the
保護層15較佳為具有可撓性。作為保護層15之縱向彈性模數,例如較佳為0.01 GPa以上,更佳為1 GPa以上,進而較佳為8 GPa以上。另一方面,作為保護層15之縱向彈性模數之上限,例如較佳為80 GPa以下,更佳為30 GPa以下,進而較佳為20 GPa以下。The
可對保護層15進行防眩處理或抗反射處理。例如於保護層15由薄膜所構成之情形時,可對薄膜之上表面(表面)、下表面(與接著層14對向之面)之至少一者實施防眩處理或抗反射處理。The
防眩處理意指如下處理:於保護層15之至少一面形成凹凸形狀,使光散射而抑制照明等光源向保護層15之映入。作為實施防眩處理之方法,例如可列舉:將分散有微粒子之黏合劑樹脂塗佈於薄膜之面之方法、噴砂、化學蝕刻等。The anti-glare treatment means a treatment in which a concave-convex shape is formed on at least one surface of the
抗反射處理意指如下處理:於保護層15之至少一面形成抗反射膜,藉由干涉而使自抗反射膜表面反射之反射光、與自抗反射膜與薄膜之界面反射之反射光衰減,抑制照明等光源之映入。抗反射膜可為單層,亦可為交替地積層折射率不同之薄膜而成者。The anti-reflection treatment means the following treatment: an anti-reflection film is formed on at least one side of the
保護層15亦可為於合成樹脂製之薄膜之單面或兩面貼附實施過防眩處理或抗反射處理後之薄膜而成者。The
(使用方法) 上述實施方式之電波反射體11例如可用作內飾紙張或裝飾材料。內層紙係安裝於內飾材料之內表面之紙材料。作為內飾材料,例如可列舉:內壁、天花板、隔壁、地板材等。作為裝飾材料,例如可列舉:海報、裝飾貼紙、彩色玻璃風格貼紙等。裝飾材料可列舉:牆壁材料、地板材、門、照明罩、門楣、柱、電視、桌子之頂板等。圖8中,圖示了將作為裝飾材料30A之海報安裝於牆面,將裝飾材料30B安裝於照明罩之例。(Usage) The
藉由將包含電波反射體11之裝飾材料30A、30B安裝於室內之機器或建築材料,使得自室外通過窗33等進入室內之電波於裝飾材料30A、30B處反射。藉此,電波到達至室內空間S之更廣範圍,電波接收之方便性提昇。By installing the decorative materials 30A and 30B including the
又,電波反射體11並不限於用作壁紙之例,例如亦可用於印刷合板之印刷紙。於該情形時,可使用包含電波反射體11之合板來構成門、牆面、隔壁、外牆壁材料、屋頂、天花板、地板材、壁腳板等。Furthermore, the
又,作為電波反射體11,並不限於呈平板狀使用,亦可呈球面使用。例如圖8(B)係在俯視下觀察室內所得之圖。表面具有電波反射體11之建築材料30係房屋之角落之具有球面之角柱30C。自窗33進入之電波於角柱30C進行反射,在室內空間S,電波在更廣範圍內發生擴展。再者,圖8(A)、圖8(B)僅為示出出射波之示意圖,並非表示實際之電波之反射範圍。Furthermore, the
<評價試驗> 關於電波反射體11,製作實施例1~3,並且製作比較例1、2,進行擴散性之評價試驗。但是,本發明之電波反射體11並不限定於實施例1~3。<Evaluation Test> Regarding the
(實施例及比較例之說明) 於實施例1~3及比較例1、2中,以如下方式製作試驗片。相對於下述接著劑100份添加交聯劑1份,攪拌3分鐘,藉此獲得接著劑組成物。繼而,於塗佈台鋪設保護層,滴加接著劑組成物,啟動調整至厚度25 μm之塗佈機,藉此獲得接著層。將其於溫度110℃乾燥5分鐘,然後於40℃加熱熟化48小時,藉此獲得試驗片之保護層及接著層。(Explanation of Examples and Comparative Examples) In Examples 1 to 3 and Comparative Examples 1 and 2, test pieces were prepared in the following manner. 1 part of a crosslinking agent was added to 100 parts of the following adhesive, and the mixture was stirred for 3 minutes to obtain an adhesive composition. Then, a protective layer was laid on a coating table, the adhesive composition was dripped, and a coating machine adjusted to a thickness of 25 μm was started to obtain an adhesive layer. It was dried at a temperature of 110°C for 5 minutes, and then heated and aged at 40°C for 48 hours to obtain a protective layer and an adhesive layer of the test piece.
繼而,將以下條件之導電層、與之前製作之保護層及接著層於40℃真空層壓6分鐘,藉此獲得試驗片。Then, the conductive layer under the following conditions, the protective layer and the adhesive layer prepared above were vacuum-laminated at 40° C. for 6 minutes to obtain a test piece.
(1)實施例1 作為實施例1,關於上述試驗片之導電層之條件如下所述。 ・第1導電部 第1包圍部之形狀:四邊形(正方形) 第1包圍部之線寬:2 μm 第1包圍部之線之厚度:1 μm 第1包圍部之外周長:0.8 mm 外周長之長度相對於波長之比率:0.08 介電體:丙烯酸樹脂 相對介電常數:3.1 ・第2導電部 第2包圍部之形狀:四邊形(正方形) 第2包圍部之線寬:2 μm 第2包圍部之線之厚度:1 μm 重心間之距離:2.63 mm 重心間距離相對於波長之比率:0.263 第1導電部與第2導電部之構成:單層 將實施例1之導電體之圖案示於圖10。再者,在作圖上,將第1包圍部與第2包圍部之線之粗度設為不同之粗度,但數值如上所述。(1) Example 1 As Example 1, the conditions for the conductive layer of the test piece were as follows.・First conductive part Shape of the first surrounding part: quadrilateral (square) Line width of the first surrounding part: 2 μm Line thickness of the first surrounding part: 1 μm Outer perimeter of the first surrounding part: 0.8 mm Ratio of the length of the outer perimeter to the wavelength: 0.08 Dielectric: acrylic resin Relative dielectric constant: 3.1 ・Second conductive part Shape of the second surrounding part: quadrilateral (square) Line width of the second surrounding part: 2 μm Line thickness of the second surrounding part: 1 μm Distance between centers of gravity: 2.63 mm Ratio of the distance between centers of gravity to the wavelength: 0.263 Structure of the first conductive part and the second conductive part: single layer The pattern of the conductive body of Example 1 is shown in FIG. 10 . Furthermore, in the drawing, the thickness of the line of the first enclosing part and the second enclosing part is set to different thicknesses, but the values are the same as above.
(2)實施例2 作為實施例2,關於上述試驗片之導電層之條件如下所述。 ・第1導電部 第1包圍部之形狀:四邊形(正方形) 第1包圍部之線寬:1 μm 第1包圍部之線之厚度:1 μm 第1包圍部之外周長:1 mm 外周長之長度相對於波長之比率:0.1 介電體:丙烯酸樹脂 相對介電常數:3.1 ・第2導電部 第2包圍部之形狀:四邊形(正方形) 第2包圍部之線寬:1 μm 第2包圍部之線之厚度:1 μm 重心間之距離:0.5 mm 重心間距離相對於波長之比率:0.05 第1導電部與第2導電部之構成:單層 將實施例2之導電體之圖案示於圖11。圖11示出了第1導電部與第2導電部之投影圖。再者,在作圖上,將第1包圍部與第2包圍部之線之粗度設為不同之粗度,但數值如上所述。(2) Example 2 As Example 2, the conditions for the conductive layer of the above-mentioned test piece were as follows.・1st conductive part Shape of the 1st surrounding part: quadrilateral (square) Line width of the 1st surrounding part: 1 μm Line thickness of the 1st surrounding part: 1 μm Outer perimeter of the 1st surrounding part: 1 mm Ratio of the length of the outer perimeter to the wavelength: 0.1 Dielectric: acrylic resin Relative dielectric constant: 3.1 ・2nd conductive part Shape of the 2nd surrounding part: quadrilateral (square) Line width of the 2nd surrounding part: 1 μm Line thickness of the 2nd surrounding part: 1 μm Distance between centers of gravity: 0.5 mm Ratio of the distance between centers of gravity to the wavelength: 0.05 Structure of the 1st conductive part and the 2nd conductive part: single layer The pattern of the conductive body of Example 2 is shown in FIG11. FIG11 shows a projection of the 1st conductive part and the 2nd conductive part. Furthermore, in the drawing, the thickness of the line of the first enclosing part and the second enclosing part is set to different thicknesses, but the values are the same as above.
(3)實施例3 作為實施例3,關於上述試驗片之導電層之條件如下所述。 ・第1導電部 第1包圍部之形狀:四邊形(正方形) 第1包圍部之線寬:1 μm 第1包圍部之線之厚度:1 μm 第1包圍部之外周長:1 mm 外周長之長度相對於波長之比率:0.1 介電體:丙烯酸樹脂 相對介電常數:3.1 ・第2導電部 第2包圍部之形狀:四邊形(正方形) 第2包圍部之線寬:1 μm 第2包圍部之線之厚度:1 μm 重心間之距離:0.5 mm 重心間距離相對於波長之比率:0.05 第1導電部與第2導電部之構成:複層 實施例3之導電體之圖案與圖11相同。但是,於實施例3中,第1導電部與第2導電部係以不同之層形成。(3) Example 3 As Example 3, the conditions for the conductive layer of the test piece were as follows.・The first conductive part The shape of the first surrounding part: quadrilateral (square) The line width of the first surrounding part: 1 μm The thickness of the line of the first surrounding part: 1 μm The outer perimeter of the first surrounding part: 1 mm The ratio of the length of the outer perimeter to the wavelength: 0.1 Dielectric: acrylic resin Relative dielectric constant: 3.1 ・The second conductive part The shape of the second surrounding part: quadrilateral (square) The line width of the second surrounding part: 1 μm The thickness of the line of the second surrounding part: 1 μm The distance between the centers of gravity: 0.5 mm The ratio of the distance between the centers of gravity to the wavelength: 0.05 Structure of the first conductive part and the second conductive part: multilayer The pattern of the conductive body of Example 3 is the same as that of Figure 11. However, in the third embodiment, the first conductive portion and the second conductive portion are formed in different layers.
(4)實施例4 作為實施例4,關於上述試驗片之導電層之條件如下所述。 ・第1導電部 第1包圍部之形狀:四邊形(正方形) 第1包圍部之線寬:1.5 μm 第1包圍部之線之厚度:1.1 μm 第1包圍部之外周長:0.0985 mm 外周長之長度相對於波長之比率:0.00985 介電體:丙烯酸樹脂 相對介電常數:3.1 ・第2導電部 第2包圍部之形狀:圓形 第2包圍部之線寬:1.5 μm 第2包圍部之線之厚度:1.1 μm 重心間之距離:0.0985 mm 重心間距離相對於波長之比率:0.00985 第1導電部與第2導電部之構成:單層 實施例3之導電體之圖案與圖7(E)相同。再者,在作圖上,將第1包圍部與第2包圍部之線之粗度設為不同之粗度,但數值如上所述。(4) Example 4 As Example 4, the conditions for the conductive layer of the test piece were as follows.・The first conductive part The shape of the first surrounding part: quadrilateral (square) The line width of the first surrounding part: 1.5 μm The thickness of the line of the first surrounding part: 1.1 μm The outer perimeter of the first surrounding part: 0.0985 mm The ratio of the length of the outer perimeter to the wavelength: 0.00985 Dielectric: acrylic resin Relative dielectric constant: 3.1 ・The second conductive part The shape of the second surrounding part: circle The line width of the second surrounding part: 1.5 μm The thickness of the line of the second surrounding part: 1.1 μm The distance between the centers of gravity: 0.0985 mm The ratio of the distance between the centers of gravity to the wavelength: 0.00985 Structure of the first conductive part and the second conductive part: single layer The pattern of the conductive body of Example 3 is the same as that of Figure 7 (E). Furthermore, in the drawing, the thickness of the line of the first enclosing part and the second enclosing part is set to different thicknesses, but the values are the same as above.
(4)比較例1 作為比較例1,關於上述試驗片之導電層之條件如下所述。 使用對表面進行了研磨之鋁板(A1050)。(4) Comparative Example 1 As Comparative Example 1, the conditions for the conductive layer of the test piece were as follows: A surface-polished aluminum plate (A1050) was used.
(5)比較例2 作為比較例2,關於上述試驗片之導電層之條件如下所述。 ・第1導電部 第1包圍部之形狀:四邊形 第1包圍部之線寬:2 μm 第1包圍部之線之厚度:1 μm 第1包圍部之外周長:0.8 mm 外周長之長度相對於波長之比率:0.08 介電體:丙烯酸樹脂 相對介電常數:3.1 ・第2導電部:無(5) Comparative Example 2 As Comparative Example 2, the conditions for the conductive layer of the above test piece are as follows. ・1st conductive part Shape of the 1st surrounding part: quadrilateral Line width of the 1st surrounding part: 2 μm Line thickness of the 1st surrounding part: 1 μm Outer perimeter of the 1st surrounding part: 0.8 mm Ratio of the length of the outer perimeter to the wavelength: 0.08 Dielectric: acrylic resin Relative dielectric constant: 3.1 ・2nd conductive part: None
(評價方法) 使實施例1~3及比較例1、2之試驗片反射頻率為30 GHz(波長10 mm)之電波,測定正規反射強度、及將正規反射設為0°時之±15°之位置處之反射強度。為了評價擴散性,將正規反射之反射強度、與將正規反射設為0°時之±15°之位置處之反射強度的差為5 dB以下之情況評價為「○」,將大於5 dB之情況評價為「×」。(Evaluation method) The test pieces of Examples 1 to 3 and Comparative Examples 1 and 2 were made to reflect radio waves with a frequency of 30 GHz (wavelength 10 mm), and the regular reflection intensity and the reflection intensity at the position of ±15° when the regular reflection was set to 0° were measured. In order to evaluate the diffusibility, the difference between the reflection intensity of the regular reflection and the reflection intensity at the position of ±15° when the regular reflection was set to 0° was 5 dB or less was evaluated as "○", and the difference greater than 5 dB was evaluated as "×".
(試驗結果) 於表1示出試驗結果。
[表1]
自表1可知,實施例1~4之擴散性之評價為「○」,相對於此,比較例1、2中為「×」。據此可知,實施例1~4中,即便於相對於正規反射為±15°之位置處,反射強度亦未如何衰減。如此可知,藉由如實施例1~4般設置第2導電部,可獲得擴散性較高之電波反射體11。As can be seen from Table 1, the evaluation of the diffusivity of Examples 1 to 4 is "○", while that of Comparative Examples 1 and 2 is "×". It can be seen that in Examples 1 to 4, the reflection intensity is not much attenuated even at the position of ±15° relative to the normal reflection. Thus, by providing the second conductive part as in Examples 1 to 4, a
又,關於正規反射之電波強度,實施例4停留於-16,相對於此,實施例2-3中為-20。認為其原因在於,由於實施例4之線寬為1.5 μm且外周長為0.0985 mm,相對於此,實施例2-3之線寬為1 μm且外周長為1 mm,故而導電體相對於反射面整面所占之比率越高,正規反射之電波強度之衰減越小。如此可知,根據實施例4,在保持作為電波反射材之透明性之同時,較高地保持電波反射強度,並且可獲得更高之擴散性。In addition, regarding the intensity of the radio wave of the regular reflection, Example 4 remains at -16, while Example 2-3 is -20. The reason is considered to be that since the line width of Example 4 is 1.5 μm and the outer perimeter is 0.0985 mm, while the line width of Example 2-3 is 1 μm and the outer perimeter is 1 mm, the higher the ratio of the conductor to the entire reflection surface, the smaller the attenuation of the intensity of the radio wave of the regular reflection. Thus, according to Example 4, while maintaining the transparency as a radio wave reflector, the radio wave reflection intensity is maintained at a higher level, and a higher diffusivity can be obtained.
<變化例> 上述實施方式僅為本發明之各種實施方式之一種。實施方式只要可達成本發明之目的,便能夠根據設計等進行各種變更。以下,列舉實施方式之變化例。以下所說明之變化例能夠適當地組合而應用。<Variations> The above-mentioned implementation is only one of various implementations of the present invention. As long as the purpose of the present invention can be achieved, the implementation can be variously modified according to the design, etc. The following lists the variations of the implementation. The variations described below can be appropriately combined and applied.
(1)變化例1 如圖9所示,電波反射體11可在上下方向積層複數層。例如於導電層16A之上經由接著層14A而接著有其他導電層16B,於導電層16B之上經由接著層14B而接著有保護層15。再者,導電層16A與實施方式同樣地具備基材13A與導電體12A。導電層16B同樣地具備基材13B與導電體12B。(1) Modification 1 As shown in FIG. 9 , the
再者,形成於導電層16之導電體12亦可積層有3層以上。若積層導電體12之數量較多,則反射強度變大,但由於電波反射體11整體之厚度會變厚,故可撓性降低,又,可見光穿透性亦降低。因此,尤其於無需可撓性或透明性之處設置電波反射體11之情形時,可根據使用用途等適當地設定積層數,如使積層數變多等。Furthermore, the number of the
(2)其他 上述實施方式中,電波反射體11形成為片狀,但本發明中並不限於此,例如可為板狀、塊狀、球狀、箱狀等形狀。又,電波反射體11之安裝對象並不限於建築材料,亦可為電器、建築構造物、汽車、電車、飛機等。(2) Others In the above-mentioned embodiment, the
上述實施方式中,電波反射體11於導電層16與保護層15之間具備接著層14,但若保護層15具有自接著力,則亦可無接著層14。又,保護層15亦可藉由相對於導電層16以密封材料來密封外緣部,而不依賴於接著層14進行固定。再者,保護層15未必需要固定於導電層16。In the above embodiment, the
以上,對本發明之一實施方式進行了說明,但本發明並不限於上述實施方式,能夠於不偏離本發明之主旨之範圍內進行各種變更。作為實施方式而記載或示於圖式中之構成零件之尺寸、材質、形狀、其相對配置等並非旨在將本發明之範圍限定於此,僅為單純之說明例。例如「在某方向」、「沿著某方向」、「平行」、「正交」、「中心」、「同心」或「同軸」等表示相對或絕對配置之表達,不僅嚴格地表示此種配置,亦表示以公差、或能夠獲得相同功能之程度之角度或距離相對地發生了位移之狀態。例如「同一」、「相等」及「均質」等表示事物處於相等狀態之表達,不僅表示嚴格相等之狀態,亦表示存在公差、或能夠獲得相同功能之程度之差的狀態。例如四邊形或圓柱形等表示形狀之表達,不僅在幾何學上表示嚴格意義下之四邊形或圓柱形等形狀,亦表示在能夠獲得相同效果之範圍內包含凹凸部或倒角部等之形狀。「包括」、「含有」、「具備」、「包含」或「具有」一個構成要素之表達,並非將其他構成要素之存在排除在外之排他性表達。One embodiment of the present invention has been described above, but the present invention is not limited to the above-mentioned embodiment, and various changes can be made within the scope of the subject matter of the present invention. The dimensions, materials, shapes, relative configurations, etc. of the components recorded as embodiments or shown in the drawings are not intended to limit the scope of the present invention, but are merely illustrative examples. For example, expressions such as "in a certain direction", "along a certain direction", "parallel", "orthogonal", "center", "concentric" or "coaxial" that indicate relative or absolute configurations not only strictly indicate such configurations, but also indicate a state in which displacement occurs relative to each other at an angle or distance that is within a tolerance or a degree that enables the same function to be obtained. For example, expressions such as "same", "equal" and "homogeneous" that indicate that things are in an equal state do not only indicate a strictly equal state, but also indicate a state in which there is a tolerance or a difference in the degree to which the same function can be obtained. For example, expressions such as quadrilateral or cylinder that indicate shapes do not only indicate shapes such as quadrilateral or cylinder in the strict sense of geometry, but also indicate shapes that include concave and convex parts or chamfered parts within the scope of being able to obtain the same effect. The expression "includes", "contains", "has", "includes" or "has" a constituent element is not an exclusive expression that excludes the existence of other constituent elements.
本說明書中,有時使用如「大致平行」、或「大致正交」般伴隨有「大致」之表達。例如,「大致平行」意指實質上「平行」,不僅為嚴格「平行」之狀態,亦意指包含幾度左右之誤差。其他伴隨有「大致」之表達亦同樣如此。In this specification, sometimes, expressions accompanied by "approximately" are used, such as "approximately parallel" or "approximately orthogonal". For example, "approximately parallel" means substantially "parallel", not only the state of strict "parallelism", but also means including errors of several degrees. The same applies to other expressions accompanied by "approximately".
又,本說明書中,使用有如「端部」及「端」等以有無「…部」來加以區分之表達。例如,「端」意指物體之末尾部分,「端部」意指具有包含「端」之一定範圍之區域。若為處於包含端之一定範圍內之點,均視為「端部」。其他伴隨有「…部」之表達亦同樣如此。In addition, in this specification, expressions such as "end" and "end" are distinguished by the presence or absence of "part". For example, "end" means the end of an object, and "end" means a region with a certain range including the "end". Any point within a certain range including the end is considered an "end". The same applies to other expressions accompanied by "part".
11:電波反射體 12:導電體 14:接著層 15:保護層 16:導電層 4:第1導電部 41:第1包圍部 5:第2導電部 51:第2包圍部 R1:第1區域 R2:第2區域11: Radio wave reflector 12: Conductor 14: Adhesive layer 15: Protective layer 16: Conductive layer 4: 1st conductive part 41: 1st surrounding part 5: 2nd conductive part 51: 2nd surrounding part R1: 1st region R2: 2nd region
[圖1]係用以說明利用實施方式之電波反射體進行反射之反射波之角度範圍之示意圖。 [圖2]係實施方式之電波反射體之示意平面圖。 [圖3]係圖2之C-C線示意剖視圖。 [圖4]之圖4(A)係圖2之A部分之放大圖。圖4(B)係用以說明圖4(A)之B部分之示意放大圖。圖4(C)係用以說明電波之擴散性之示意說明圖。 [圖5](A)~(D)係說明導電體之製造步驟之示意圖。 [圖6](A)~(E)係說明導電體之另一製造步驟之示意圖。 [圖7](A)~(E)係表示導電體之配置圖案之變化例之示意平面圖。 [圖8]之圖8(A)係表示實施方式之電波反射體之使用例之說明圖。圖8(B)係表示建築材料在室內之應用例之示意平面圖。 [圖9]係變化例之電波反射體之示意剖視圖。 [圖10]係表示實施例1之導電體之圖案之示意平面圖。 [圖11]係表示實施例2、3之導電體之圖案之示意平面圖。[Fig. 1] is a schematic diagram for explaining the angle range of the reflected wave reflected by the radio wave reflector of the embodiment. [Fig. 2] is a schematic plan view of the radio wave reflector of the embodiment. [Fig. 3] is a schematic cross-sectional view of the C-C line of Fig. 2. [Fig. 4] Fig. 4 (A) is an enlarged view of the A part of Fig. 2. Fig. 4 (B) is a schematic enlarged view of the B part of Fig. 4 (A). Fig. 4 (C) is a schematic diagram for explaining the diffusivity of radio waves. [Fig. 5] (A) to (D) are schematic diagrams for explaining the manufacturing steps of the conductor. [Fig. 6] (A) to (E) are schematic diagrams for explaining another manufacturing step of the conductor. [Fig. 7] (A) to (E) are schematic plan views showing a variation of the configuration pattern of the conductor. FIG. 8 (A) of FIG. 8 is an explanatory diagram showing an example of use of the radio wave reflector of the embodiment. FIG. 8 (B) is a schematic plan view showing an example of indoor application of the building material. FIG. 9 is a schematic cross-sectional view of a radio wave reflector of a variation. FIG. 10 is a schematic plan view showing a pattern of the conductor of the embodiment 1. FIG. 11 is a schematic plan view showing a pattern of the conductor of the embodiments 2 and 3.
4:第1導電部 4: First conductive part
5:第2導電部 5: Second conductive part
12:導電體 12: Conductor
41:第1包圍部 41: The first encirclement
51:第2包圍部 51: Second encirclement
411:第1線狀體 411: 1st linear body
412:第2線狀體 412: Second linear body
511:第3線狀體 511: The third linear body
512:第4線狀體 512: 4th linear body
A1:第1開口 A1: Opening 1
A2:第2開口 A2: 2nd opening
R1:第1區域 R1: Area 1
R2:第2區域 R2: Area 2
L6:第1包圍部之線寬 L6: Line width of the first enclosing part
L7:第1區域中之邊緣之間之最大長度 L7: Maximum length between edges in region 1
L8:第2包圍部之線寬 L8: Line width of the second enclosing part
L9:相鄰之第2包圍部之重心間之距離 L9: The distance between the centers of gravity of the adjacent second enclosures
Claims (11)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2022-123577 | 2022-08-02 |
Publications (1)
Publication Number | Publication Date |
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TW202422949A true TW202422949A (en) | 2024-06-01 |
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