TW202422910A - 晶片級封裝光二極體 - Google Patents

晶片級封裝光二極體 Download PDF

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Publication number
TW202422910A
TW202422910A TW111147853A TW111147853A TW202422910A TW 202422910 A TW202422910 A TW 202422910A TW 111147853 A TW111147853 A TW 111147853A TW 111147853 A TW111147853 A TW 111147853A TW 202422910 A TW202422910 A TW 202422910A
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TW
Taiwan
Prior art keywords
level package
chip level
photodiode
package photodiode
conductive layer
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TW111147853A
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English (en)
Inventor
曼紐爾 施密特
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德商威世半導體公司
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Application filed by 德商威世半導體公司 filed Critical 德商威世半導體公司
Publication of TW202422910A publication Critical patent/TW202422910A/zh

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Abstract

一種晶片級封裝光二極體包括位於該晶片級封裝光二極體之一第一側處的一第一導電層。一第一接點位於該晶片級封裝光二極體之一第二側處。一摻雜劑擴散層形成於該第一導電層與該第一接點之間，從而將該第一導電層電連接至該第一接點，該摻雜劑擴散層經由該晶片級封裝光二極體之一空乏區自該晶片級封裝光二極體之該第一側完全行進至該晶片級封裝光二極體之該第二側。
TW111147853A 2022-11-15 2022-12-13 晶片級封裝光二極體 TW202422910A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17/987,507 2022-11-15

Publications (1)

Publication Number Publication Date
TW202422910A true TW202422910A (zh) 2024-06-01

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