TW202422775A - Fixture and Position Alignment Method - Google Patents

Abstract

The present invention provides a position alignment jig and a position alignment method, which are used for position alignment of an annular component when the annular component is transported to a plasma processing chamber for installation. The present invention is a jig used when the annular component is installed on an annular support surface of the installed component, and is characterized by comprising: a substrate; and a sheet component having a fixing portion fixed to the substrate and a protruding portion protruding from the side surface of the substrate.

Description

Fixture and Position Alignment Method

The present invention relates to a fixture and a position alignment method.

Patent document 1 discloses an etching device having an annular member (i.e., an edge ring) arranged to surround the outer periphery of a substrate supported by a substrate support portion in a plasma processing chamber. [Prior art document] [Patent document]

[Patent Document 1] Japanese Patent Publication No. 2022-14879

[The problem the invention is trying to solve]

In one embodiment, the present invention provides a jig and a method for aligning the position of an annular component when the annular component is transported to a plasma processing chamber for installation. [Means for solving the problem]

In order to solve the above problem, according to one embodiment, a jig is provided, which is used when an annular component is set on an annular support surface of a set component, and is characterized by comprising: a substrate; and a sheet component having a fixing portion fixed to the substrate and a protruding portion protruding from the side surface of the substrate. [Effect of the invention]

According to one embodiment, the annular member can be accurately aligned when it is transported to a plasma processing chamber and placed therein.

Hereinafter, the embodiments of the present invention will be described with reference to the drawings. In each drawing, the same components are sometimes given the same symbols and repeated descriptions are omitted.

<Plasma processing device> First, the structural example of the plasma processing device 1 is described with reference to FIG1. FIG1 is a diagram for describing the structural example of the plasma processing device 1.

The plasma processing system includes a capacitive coupling type plasma processing device 1 and a control unit 2. The capacitive coupling type plasma processing device 1 includes: a plasma processing chamber 10, a gas supply unit 20, a power supply 30 and an exhaust system 40. In addition, the plasma processing device 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is arranged in the plasma processing chamber 10. The shower head 13 is arranged above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s partitioned by a shower head 13, a side wall 10a of the plasma processing chamber 10, and a substrate support portion 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas exhaust port for exhausting the gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support portion 11 are electrically insulated from the shell of the plasma processing chamber 10.

A transfer port (not shown in the figure) is provided on the side wall 10a of the plasma processing chamber 10 for transferring the substrate W or the annular member (e.g., the edge ring 112 and the cover ring 113) described later) between the plasma processing chamber 10 and the vacuum transfer chamber (not shown in the figure) provided adjacent thereto. The transfer port is opened and closed by a gate valve (not shown in the figure).

The substrate support part 11 includes a main body 111 and an annular component 114. The main body 111 has a central area 111a for supporting a substrate W and an annular area 111b for supporting the annular component 114. A wafer is an example of a substrate W. The annular area 111b of the main body 111 surrounds the central area 111a of the main body 111 in a plan view. The substrate W is arranged on the central area 111a of the main body 111; the annular component 114 is arranged on the annular area 111b of the main body 111 in a manner of surrounding the substrate W on the central area 111a of the main body 111. Therefore, the central region 111 a is also referred to as a substrate supporting surface for supporting the substrate W; and the annular region 111 b is also referred to as an annular supporting surface for supporting the annular assembly 114 .

In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and electrostatic electrodes 1111b and 1111c disposed in the ceramic member 1111a. The electrostatic electrode 1111b is disposed in the central region 111a. The electrostatic electrode 1111c is disposed in the annular region 111b. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic component 1111a also has an annular region 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component, may also have an annular region 111b. In this case, the annular component 114 may be disposed on the annular electrostatic chuck or the annular insulating component, or may be disposed on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF/DC electrode connected to the RF (Radio Frequency) power supply 31 and/or the DC (Direct Current) power supply 32 described later may also be disposed in the ceramic component 1111a. At this time, at least one RF/DC electrode functions as a lower electrode. When the bias RF signal and/or DC signal described later is supplied to at least one RF/DC electrode, the RF/DC electrode is also called a bias electrode. In addition, the conductive component of the base 1110 and at least one RF/DC electrode can also function as a plurality of lower electrodes. In addition, the electrostatic electrode 1111b can also function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

The annular component 114 includes one or more annular components (annular components). In one embodiment, the one or more annular components include one or more edge rings 112 and at least one cover ring 113. The edge ring 112 is formed of a conductive material or an insulating material; the cover ring 113 is formed of an insulating material.

In addition, the substrate support portion 11 may also include a temperature control module, which is configured to adjust at least one of the electrostatic chuck 1111, the annular component 114 and the substrate W to a target temperature. The temperature control module may also include a heater, a heat-conducting medium, a circulation pipeline 1110a or a combination of these components. A heat-conducting fluid such as brine or gas flows in the circulation pipeline 1110a. In one embodiment, the circulation pipeline 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic component 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may also include a heat-conducting gas supply portion, which is configured to supply a heat-conducting gas to the gap between the back side of the substrate W and the central area 111a.

In addition, the substrate support part 11 may also include, for example, three lifting pins (first lifting pins) 15 that can be raised and lowered from the substrate support surface of the central area 111a. The lifting pins 15 are raised or lowered by a lifting mechanism (not shown in the figure). When the lifting pins 15 are raised from the substrate support surface, the substrate W supported by the substrate support surface is lifted up by the lifting pins 15. The transport device (not shown in the figure) receives the substrate W lifted up by the lifting pins 15. In addition, the transport device transfers the substrate W to the lifting pins 15. When the lifting pins 15 are lowered from the substrate support surface, the substrate W supported by the lifting pins 15 is transferred to the substrate support surface for support.

In addition, the substrate support portion 11 may also include, for example, three lifting pins (second lifting pins) 16 that can be raised and lowered from the annular support surface of the annular region 111b. The lifting pins 16 are raised or lowered by a lifting mechanism (not shown in the figure). When the lifting pins 16 are raised from the annular support surface, at least one annular component (e.g., edge ring 112, cover ring 113) of the annular assembly 114 supported by the annular support surface is lifted by the lifting pins 16. The transport device (not shown in the figure) receives the annular component lifted by the lifting pins 16. In addition, the transport device transfers the annular component to the lifting pins 16. When the lifting pin 16 descends from the annular supporting surface, the annular component supported by the lifting pin 16 is transferred to the annular supporting surface for support.

That is, the edge ring 112 or the cover ring 113 or other annular components consumed by the plasma processing are carried out of the plasma processing space 10s through the carrying port. In addition, a new edge ring 112 or the cover ring 113 or other annular components are carried into the plasma processing space 10s through the carrying port and are placed on the annular support surface. In this way, the edge ring 112 or the cover ring 113 or other annular components can be automatically replaced through the carrying port without opening the top of the plasma processing chamber 10.

The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. In addition, the shower head 13 includes at least one upper electrode. In addition, the gas introduction part, in addition to the shower head 13, may also include one or more side gas injection parts (SGI, Side Gas Injector), which are installed in one or more openings, and the one or more openings are formed in the side wall 10a.

The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one treatment gas from the respective gas sources 21 through the respective corresponding flow controllers 22 to the shower head 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include one or more flow modulation devices that modulate or pulse the flow of at least one treatment gas.

The power source 30 includes an RF power source 31 connected to the plasma processing chamber 10 through at least one impedance matching circuit. The RF power source 31 is configured to "supply at least one RF signal (RF power) to at least one lower electrode and/or at least one upper electrode." Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power source 31 can function as "at least a part of a plasma generating unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10." In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, and the ion components in the formed plasma can be attracted to the substrate W.

In one embodiment, the RF power source 31 includes a first RF signal generating unit 31a and a second RF signal generating unit 31b. The first RF signal generating unit 31a is configured to "be connected to at least one lower electrode and/or at least one upper electrode through at least one impedance matching circuit, and generate a source RF signal (source RF power) for plasma generation." In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF signal generating unit 31a may also be configured to "generate a plurality of source RF signals having different frequencies." The generated one or more source RF signals are supplied to at least one lower electrode and/or at least one upper electrode.

The second RF signal generating unit 31b is configured to "be connected to at least one lower electrode through at least one impedance matching circuit and generate a bias RF signal (bias RF power)". The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF signal generating unit 31b may also be configured to "generate a plurality of bias RF signals having different frequencies". The generated one or more bias RF signals are supplied to at least one lower electrode. Additionally, in various implementations, at least one of the source RF signal and the bias RF signal may be pulsed.

In addition, the power supply 30 may also include a DC power supply 32 connected to the plasma processing chamber 10. The DC power supply 32 includes a first DC signal generating unit 32a and a second DC signal generating unit 32b. In one embodiment, the first DC signal generating unit 32a is configured to be "connected to at least one lower electrode and generate a first DC signal". The generated first bias DC signal is applied to at least one lower electrode. In one embodiment, the second DC signal generating unit 32b is configured to be "connected to at least one upper electrode and generate a second DC signal". The generated second DC signal is applied to at least one upper electrode.

In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a voltage pulse sequence is applied to at least one lower electrode and/or at least one upper electrode. The voltage pulse may have a rectangular, trapezoidal, triangular or a combination thereof pulse waveform. In one embodiment, a waveform generator for generating a voltage pulse sequence from a DC signal is connected between the first DC signal generator 32a and at least one lower electrode. Therefore, the first DC signal generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC signal generating unit 32b and the waveform generating unit constitute a voltage pulse generating unit, the voltage pulse generating unit is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the voltage pulse sequence may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, the first and second DC signal generating units 32a and 32b may be added to the RF power source 31, or the first DC signal generating unit 32a may replace the second RF signal generating unit 31b.

The exhaust system 40, for example, can be connected to the gas exhaust port 10e disposed at the bottom of the plasma processing chamber 10. The exhaust system 40 can also include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump can also include a turbomolecular pump, a dry pump or a combination thereof.

The control unit 2 processes computer executable commands that cause the plasma processing device 1 to implement the various steps described in the present invention. The control unit 2 can be constructed in a manner of "controlling the various elements of the plasma processing device 1 to implement the various steps described herein." In one embodiment, a part or all of the control unit 2 can also be included in the plasma processing device 1. The control unit 2 can also include a processing unit 2a1, a memory unit 2a2, and a communication interface 2a3. The control unit 2 is, for example, implemented by a computer 2a. The processing unit 2a1 can be constructed in a manner of "reading a program from the memory unit 2a2 and executing the read program to implement various control actions." The program can be pre-stored in the memory unit 2a2, and can also be obtained through a medium when necessary. The obtained program is stored in the memory unit 2a2, and is read and executed from the memory unit 2a2 by the processing unit 2a1. The medium can be various recording media readable by the computer 2a, or a communication line connected to the communication interface 2a3. The processing unit 2a1 can also be a CPU (Central Processing Unit). The memory unit 2a2 can also include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can also communicate with the plasma processing device 1 through a communication line such as a LAN (Local Area Network).

<Position alignment jig> Next, the position alignment jig (jig) 200 is described using FIG. 2 and FIG. 3. FIG. 2 is an example of a three-dimensional view of the position alignment jig 200. FIG. 3 is an example of a partially enlarged three-dimensional view of the position alignment jig 200.

The position alignment jig 200 is a jig used for position alignment of an annular member when an annular member such as an edge ring 112 or a cover ring 113 is set on an annular support surface (annular region 111b) of a main body 111 as a member to be set. Specifically, the position alignment jig 200 aligns the position of the annular member relative to the member to be set by managing the gap between the "position alignment target surface of the annular member" and the "opposing surface of the member to be set facing the position alignment target surface". The position alignment jig 200 has a substrate 210 and a plurality of centering pieces (sheet members) 220.

The substrate 210 is a plate-shaped member. The substrate 210 is formed into a shape that can be carried by a carrying arm 500 (refer to FIG. 5 described later) of a carrying device (not shown). The substrate 210 is formed into a shape that can be set in the central area 111a of the main body 111.

The substrate 210 is preferably formed as a circular plate of a conductive member such as a material [such as silicon (Si)] that can be adsorbed by the electrostatic chuck 1111. In addition, the substrate 210 can also be formed of a material such as ceramic or resin.

In addition, the diameter of the substrate 210 is formed to be smaller than the diameter of the inner peripheral surface of the annular member to be aligned. That is, the diameter of the position alignment jig 200 used for the position alignment of the edge ring 112 is formed to be smaller than the diameter of the inner peripheral surface 112c (refer to FIG. 8 described later) of the edge ring 112. The diameter of the position alignment jig 200 used for the position alignment of the cover ring 113 is formed to be smaller than the diameter of the inner peripheral surface 113c (refer to FIG. 18 described later) of the cover ring 113. In this way, the substrate 210 can pass through the hole of the annular member.

In addition, the diameter of the substrate 210 is preferably formed smaller than the diameter of the opposing surface that is opposite to the inner peripheral surface of the ring-shaped member for position alignment. That is, the diameter of the position alignment jig 200 used for position alignment of the edge ring 112 is preferably formed smaller than the diameter of the edge ring opposing surface 111c1 (refer to FIG. 11 described later) that is opposite to the inner peripheral surface 112c of the edge ring 112. The diameter of the position alignment jig 200 used for position alignment of the cover ring 113 is preferably formed smaller than the diameter of the cover ring opposing surface 111c2 (refer to FIG. 21 described later) that is opposite to the inner peripheral surface 113c of the cover ring 113.

Here, if the handling accuracy of the handling device is X [mm], the maximum offset of the center position of the substrate 210 and the annular member (edge ring 112, cover ring 113) is 2X [mm]. Therefore, the diameter of the substrate 210 should be formed to be 2X [mm] or more smaller than the diameter of the inner circumference of the aligned annular member. Thereby, even if the center position of the substrate 210 and the annular member is offset due to the handling accuracy of the handling device, the annular member will not be interfered with, and the substrate 210 supported by the substrate support surface can pass through the hole of the annular member. For example, when the handling accuracy of the handling device is 0.3 mm, the diameter of the substrate 210 should be formed to be 0.6 mm or more smaller than the diameter of the inner circumference of the annular member.

In addition, the thickness of the substrate 210 is preferably a thickness that can be transported by the transport device. For example, the thickness of the substrate 210 can also be the same as the thickness of the substrate W. In this way, the position alignment jig 200 can be transported by the transport device that transports the substrate W.

As shown in FIG3 , the centering piece 220 has a fixing portion 221 and a protruding portion 222. The fixing portion 221 and the protruding portion 222 of the centering piece 220 are formed as one body and are formed of a flexible material. Specifically, the centering piece 220 is preferably formed of a resin material such as polyimide. In addition, the centering piece 220 is light-transmitting. The light transmittance of the centering piece 220 is preferably above 50%, and more preferably above 60%. When detecting the position of the edge of the substrate 210, etc. to detect the center position of the substrate 210, an optical sensor (position detection sensors S1 to S2, S11 to S72, etc. in FIG25 described later) can be used to see through the centering piece 220 to detect the position of the edge of the substrate 210, etc. The fixing portion 221 is fixed to the substrate 210. The protrusion 222 protrudes outward in the radial direction from the side surface of the substrate 210 .

The disc-shaped substrate 210 has a bottom surface (first surface), a top surface (second surface), and a side surface (third surface). The bottom surface of the substrate 210 is a surface that is supported by the substrate support surface (central area 111a) when the substrate 210 is arranged on the substrate support surface of the main body 111. The top surface of the substrate 210 is a surface on the opposite side of the bottom surface of the substrate 210. The side surface of the substrate 210 is a cylindrical surface with one end connected to the outer peripheral end of the bottom surface and the other end connected to the outer peripheral end of the top surface.

Grooves 211, 212, and 213 are formed on the top surface of the substrate 210. The internal space formed by the groove 211 is connected to the external space above the substrate 210 and to the external space outside the radial direction of the substrate 210. The fixing portion 221 of the centering piece 220 is configured to fit with the groove 211. Then, the centering piece 220 is fixed to the substrate 210 by bonding. The length of the protrusion 222 protruding from the side surface of the substrate 210 to the outside in the radial direction is managed by making the side wall 221a of the fixing portion 221 of the centering piece 220 abut against the side wall 211a of the groove 211.

In addition, a plurality of centering pieces 220 are provided along the outer periphery of the substrate 210. In the example shown in FIG. 2 , six centering pieces 220 are provided at equal intervals on the substrate 210. In other words, six grooves 211 are provided at equal intervals on the substrate 210, and a centering piece 220 is provided in each groove 211. In addition, the number of centering pieces 220 is not limited thereto, and a better embodiment is when there are three or more of them. In addition, the centering pieces 220 are preferably provided at equal intervals in the circumferential direction of the substrate 210. In addition, the centering pieces 220 may not be provided at equal intervals in the circumferential direction of the substrate 210.

The length of the protrusion 222 protruding from the side surface of the substrate 210 (the length of the protrusion 222 in the radial direction of the substrate 210) is formed to be a length that does not reach (does not contact) the annular support surface of the annular member when the annular member is set on the annular support surface and the protrusion 222 is bent. That is, in the position alignment jig 200 used for position alignment of the edge ring 112, the length of the protrusion 222 is formed to be a length that does not reach (does not contact) the edge ring support surface 111b1 that supports the edge ring 112 when the edge ring 112 is set on the annular support surface and the protrusion 222 is bent (refer to FIG. 11 described later). In the positioning jig 200 used for positioning the cover ring 113, the length of the protrusion 222 is formed so that when the cover ring 113 is set on the annular support surface and the protrusion 222 is bent, it will not reach (will not contact) the length of the cover ring support surface 111b2 that supports the cover ring 113 (refer to Figure 21 described later).

In addition, the length of the protrusion 222 protruding from the side surface of the substrate 210 (the length of the protrusion 222 in the radial direction of the substrate 210) is formed as the length of the gap between the position alignment object surface of the annular component and the opposing surface of the installed component that reaches the opposite position alignment object surface when the annular component is set on the annular support surface and the protrusion 222 is bent. That is, in the position alignment jig 200 used for aligning the position of the edge ring 112, the length of the protrusion 222 is formed to be the length of the gap between the inner circumferential surface 112c of the edge ring 112 set on the edge ring support surface 111b1 and the edge ring opposing surface 111c1 when the edge ring 112 is set on the annular support surface and the protrusion 222 is bent (refer to Figure 11 described later). In the position alignment jig 200 used for aligning the position of the covering ring 113, the length of the protrusion 222 is formed to be the length of the gap between the inner peripheral surface 113c of the covering ring 113 set on the covering ring support surface 111b2 and the covering ring opposing surface 111c2 when the covering ring 113 is set on the annular support surface and the protrusion 222 is bent (refer to Figure 21 described later).

In addition, the width of the protrusion 222 in the circumferential direction of the substrate 210 (the length of the protrusion 222 in the direction perpendicular to the radial direction of the substrate 210) is not limited. The width of the protrusion 222 is preferably formed to be greater than 2.1 mm and less than 4.5 mm, for example.

In addition, as shown in FIG. 2 and FIG. 3 , the width of the fixing portion 221 can also be formed to be wider than the width of the protruding portion 222. In this way, the contact area between the fixing portion 221 and the groove 211 of the substrate 210 can be increased, so that the fixing strength of the centering piece 220 fixed by bonding can be improved. In addition, by forming the width of the protruding portion 222 to be narrower than the width of the fixing portion 221, the protruding portion 222 can be easily bent.

The thickness of the protrusion 222 is designed according to the management dimension of the gap between the position alignment target surface of the annular member and the opposing surface of the member to be installed facing the position alignment target surface. The thickness of the protrusion 222 is preferably formed to be greater than 0.05 mm and less than 0.125 mm, for example.

In addition, the groove 211 may also have an inclined surface 211b on the outer peripheral side of the substrate 210. Thus, when the protrusion 222 bends downward, it can bend along the inclined surface 211b. Thus, when the protrusion 222 bends downward, it can prevent stress concentration from occurring on the bent centering piece 220.

In addition, six grooves 212 are provided at equal intervals on the substrate 210. Furthermore, six grooves 213 are provided at equal intervals on the substrate 210. The grooves 211, 212, and 213 may have different shapes or the same shape. The alignment jig 200 may be replaced with a centering piece 220 having a different shape (e.g., the length of the protrusion 222, etc.) according to the application. For example, it may be a structure in which "the lengths of the grooves 211, 212, and 213 in the radial direction are different, thereby adjusting the length of the protrusion 222 protruding from the outer periphery of the substrate 210."

In addition, the centering piece 220 is described as a component fixed to the substrate 210 by bonding, but the fixing method is not limited to this. It can also be fixed physically by bolting or clamping with other components. In addition, the alignment jig 200 can also fix the centering piece 220 in a detachable manner. Thereby, the alignment jig 200 can be configured to have a structure of "by replacing the centering piece 220, the length of the protrusion 222, the width of the protrusion 222, and the thickness of the protrusion 222 can be arbitrarily changed."

<Edge ring installation process> The process of installing the edge ring 112 in the annular region 111b of the main body 111 is described with reference to FIGS. 4 to 13. FIG. 4 is an example of a flow chart illustrating the process of installing the edge ring 112 in the annular region 111b of the main body 111. FIGS. 5 to 13 are examples of partially enlarged cross-sectional views of the substrate support portion 11 in various states. In addition, in the following description, the diagram of the inclined surface 211b formed in the groove 211 of the substrate 210 is omitted.

Here, the structure of the substrate support portion 11 will be further described with reference to FIG. 5 .

The body 111 has a central region 111a (substrate support surface) for supporting the substrate W and an annular region 111b for supporting the annular assembly 114. The annular region 111b has an edge ring support surface 111b1 for supporting the edge ring 112 and a cover ring support surface 111b2 for supporting the cover ring 113.

The edge ring supporting surface 111b1 is arranged at the outer side of the substrate supporting surface in the radial direction and is formed at a lower position than the substrate supporting surface. An edge ring facing surface 111c1 is provided between the substrate supporting surface and the edge ring supporting surface 111b1. The edge ring facing surface 111c1 is a cylindrical surface and is a surface facing the inner peripheral surface 112c (refer to FIGS. 8 to 13) of the edge ring 112 when the edge ring 112 is supported by the edge ring supporting surface 111b1.

The cover ring supporting surface 111b2 is arranged at a position that is radially outward of the substrate supporting surface and the edge ring supporting surface 111b1, and is formed at a position that is lower than the substrate supporting surface and the edge ring supporting surface 111b1. A cover ring facing surface 111c2 is provided between the edge ring supporting surface 111b1 and the cover ring supporting surface 111b2. The cover ring facing surface 111c2 is a cylindrical surface, and is a surface that faces the inner peripheral surface 113c (refer to FIG. 5) of the cover ring 113 when the cover ring 113 is supported by the cover ring supporting surface 111b2.

The cover ring 113 has a bottom surface 113a. The bottom surface 113a is a surface that is supported by the cover ring support surface 111b2 when the cover ring 113 is arranged on the annular support surface (annular area 111b) of the main body 111. A height difference is formed on the top surface of the cover ring 113, which is lower on the inner peripheral side and higher on the outer peripheral side. An edge ring support surface 113b that supports the outer peripheral side of the edge ring 112 is formed on the inner peripheral side top surface of the cover ring 113. In addition, the cover ring 113, which is an annular member, has a cylindrical inner peripheral surface 113c. In addition, the cover ring 113 has a through hole 113d that penetrates from the bottom surface 113a to the edge ring support surface 113b.

As shown in FIGS. 8 to 13 , the edge ring 112 has a bottom surface 112a. The bottom surface 112a is a surface that “when the edge ring 112 is arranged on the annular support surface (annular region 111b) of the main body 111, the inner peripheral side abuts against the edge ring support surface 111b1 and is supported, and the outer peripheral side abuts against the edge ring support surface 113b and is supported.” In addition, the edge ring 112 as an annular member has a cylindrical inner peripheral surface 112c.

Next, the process of setting the edge ring 112 in the annular region 111b of the main body 111 will be described with reference to FIG. 4 and FIG. 5 to FIG. 13 as appropriate. Here, the inner peripheral surface 112c of the edge ring 112 is used as the position alignment target surface, the edge ring opposing surface 111c1 opposing the inner peripheral surface 112c is used as the opposing surface opposing the position alignment target surface, and the gap between the position alignment target surface and the opposing surface is managed, and the edge ring 112 is set on the annular support surface (annular region 111b) of the main body 111. In this way, the edge ring 112 is set centered relative to the main body 111 as a set member.

In step S101 , the alignment jig 200 is transported to the plasma processing chamber 10 .

FIG5 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the alignment jig 200 is transported into the plasma processing chamber 10 in step S101. The control portion 2 opens the gate and controls the transport device to transport the transport arm 500 holding the alignment jig 200 from the transport port to the plasma processing chamber 10, and then disposes the alignment jig 200 on the central area 111a of the body 111.

In step S102 , the position alignment jig 200 is received from the transfer arm 500 by the lift pins 15 and is placed on the substrate supporting surface of the electrostatic chuck 1111 .

FIG6 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the lift pins 15 receive the alignment jig 200 in step S102. The control unit 2 controls the lifting mechanism (not shown in the figure) to raise the lift pins 15. As a result, the upper end of the lift pins 15 abuts against the bottom surface of the alignment jig 200, and the alignment jig 200 is lifted from the transport arm 500 by the lift pins 15, and the alignment jig 200 is supported by the lift pins 15. Then, the control unit 2 controls the transport device to withdraw the transport arm 500 from the transport port and close the gate.

FIG. 7 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the position alignment jig 200 is set on the electrostatic chuck 1111 in step S102. The control portion 2 controls the lifting mechanism (not shown in the figure) to lower the lifting pins 15. Thereby, the position alignment jig 200 supported by the lifting pins 15 is set on the substrate support surface.

In addition, the control unit 2 controls the electrostatic chuck power supply (not shown in the figure) to apply voltage to the electrostatic electrode 1111b to fix the alignment jig 200 to the main body 111. In addition, the method of fixing the alignment jig 200 to the main body 111 is not limited to this, and it can also be fixed by other fixing methods. For example, it can also be a structure of "making the gap between the back of the alignment jig 200 and the central area 111a more highly vacuumed than the plasma processing space 10s, and fixing the alignment jig 200 to the main body 111 by the pressure difference between the top side and the bottom side of the alignment jig 200". At this time, the substrate 210 can also be formed of materials such as ceramics or resins. In addition, the positioning jig 200 may be fixed to the main body 111 by its own weight.

In step S103, the edge ring 112 is transported into the plasma processing chamber 10.

FIG8 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the edge ring 112 is transported into the plasma processing chamber 10 in step S103. The control portion 2 opens the gate valve and controls the transport device to transport the transport arm 500 holding the edge ring 112 from the transport port to the plasma processing chamber 10, and then the edge ring 112 is disposed on the annular region 111b (edge ring support surface 111b1, edge ring support surface 113b) of the body portion 111.

In step S104, the edge ring 112 is received from the transfer arm 500 by the lifting pin 16 and is set on the annular supporting surface of the electrostatic chuck 1111.

FIG9 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the edge ring 112 is received by the lifting pin 16 in step S104. The control portion 2 controls the lifting mechanism (not shown in the figure) to raise the lifting pin 16. Here, the lifting pin 16 has a thin diameter portion 161 on the upper side and a thick diameter portion 162 on the lower side. The thin diameter portion 161 is inserted through the through hole 113d of the cover ring 113, and the upper end of the thin diameter portion 161 of the lifting pin 16 abuts against the bottom surface of the edge ring 112. The edge ring 112 is lifted from the transfer arm 500 by the lifting pin 16, and the edge ring 112 is supported by the lifting pin 16. Then, the control unit 2 controls the transport device to make the transport arm 500 withdraw from the transport port and close the gate.

FIG. 10 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 when the lifting pin 16 is descending in step S104. The control portion 2 controls the lifting mechanism (not shown in the figure) to make the lifting pin 16 descend. Here, the edge ring 112 descends, and the bottom surface 112a contacts the top surface of the protrusion 222. Due to the weight of the edge ring 112 itself, the protrusion 222 is deformed. Then, the protrusion 222 is further deformed, and the bottom surface of the protrusion 222 abuts against the edge of the substrate support surface and the edge ring opposing surface 111c1. Thereby, the protrusion 222 is tilted. By the tilt of the protrusion 222, the horizontal position of the descending edge ring 112 is guided. For example, when the center position of the edge ring 112 supported by the lifting pin 16 is arranged to be offset relative to the center position of the main body 111, the edge ring 112 is guided by the tilt of the protrusion 222 to adjust the horizontal position of the edge ring 112. In this way, the edge ring 112 is prevented from crossing over the substrate support surface and being unable to be set on the annular support surface.

FIG. 11 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the edge ring 112 is set on the electrostatic chuck 1111 in step S104. The control portion 2 controls the lifting mechanism (not shown in the figure) to further lower the lifting pin 16. As a result, the edge ring 112 is supported by contacting with the edge ring support surfaces 111b1 and 113b. In addition, the length of the protrusion 222 is formed to reach the length of the gap between the inner peripheral surface 112c of the edge ring 112 and the edge ring opposing surface 111c1. As a result, the protrusion 222 is configured to be clamped in the gap between the edge ring opposing surface 111c1 and the inner peripheral surface 112c. Here, a plurality of centering pieces 220 are provided in the circumferential direction, whereby the interval between the edge ring facing surface 111c1 and the inner circumferential surface 112c is controlled at a plurality of positions in the circumferential direction by the thickness of the protrusion 222. Thus, the edge ring 112 is provided to be centered relative to the main body 111.

In addition, the length of the protrusion 222 is formed to be a length that does not reach the edge ring support surface 111b1. This prevents the protrusion 222 from being sandwiched between the bottom surface 112a of the edge ring 112 and the edge ring support surface 111b1.

In step S105, the edge ring 112 is fixed. Here, a through hole for arranging the lifting pin 16 and a supply hole for supplying heat-conducting gas to the gap between the back of the edge ring 112 and the edge ring supporting surface 111b1 are provided in the annular region 111b of the main body 111. When the edge ring 112 is supported by the annular supporting surface, gas is exhausted from the through hole and/or the supply hole to reduce the pressure in the gap between the back of the edge ring 112 and the edge ring supporting surface 111b1. Thereby, the gap between the back side of the edge ring 112 and the edge ring supporting surface 111b1 is made more highly vacuum than the plasma processing space 10s, and the edge ring 112 is fixed (temporarily fixed) to the main body 111 by the pressure difference between the top side and the bottom side of the edge ring 112. Furthermore, the control unit 2 can also control the electrostatic chuck power supply (not shown in the figure) to apply voltage to the electrostatic electrode 1111c to fix (formally fix) the edge ring 112 to the main body 111. In addition, the fixing method of fixing (temporarily fixing, formally fixing) the edge ring 112 to the main body 111 is not limited to this, and it can also be fixed by other fixing methods.

Here, when the edge ring 112 is fixed (temporarily fixed, formally fixed) to the main body 111, the edge ring 112 may move in the horizontal direction due to pressure difference, and then deviate from the appropriate position. In contrast, in step S105, the edge ring 112 is fixed (temporarily fixed, formally fixed) in a state where the protrusion 222 of the centering piece 220 is sandwiched between the edge ring facing surface 111c1 and the inner peripheral surface 112c. In this way, the edge ring 112 can be prevented from deviating from the appropriate position when it is fixed to the main body 111.

In step S106 , the positioning jig 200 is supported by the lift pins 15 .

First, when the alignment jig 200 is fixed to the main body 111 in step S102, the fixation of the alignment jig 200 is released.

Next, the control unit 2 controls the lifting mechanism (not shown in the figure) to raise the lifting pin 15. As a result, the upper end of the lifting pin 15 abuts against the bottom surface of the position alignment jig 200, and the position alignment jig 200 is lifted from the substrate support surface by the lifting pin 15, so that the position alignment jig 200 leaves the substrate support surface. In addition, the protrusion 222 arranged in the gap between the edge ring facing surface 111c1 and the inner peripheral surface 112c is pulled out. At this time, the edge ring 112 is fixed (temporarily fixed or formally fixed) to the main body 111, and when the protrusion 222 is pulled out from between the edge ring facing surface 111c1 and the inner peripheral surface 112c, the position of the edge ring 112 can be prevented from being offset. Then, due to the restoring force of the centering piece 220, the protrusion 222 returns to a substantially horizontal position.

In step S107 , the alignment jig 200 is moved out of the plasma processing chamber 10 .

FIG. 12 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the alignment jig 200 is transported into the plasma processing chamber 10 in step S107. The control portion 2 opens the gate valve and controls the transport device to transport the transport arm 500 from the transport port to the plasma processing chamber 10, and then arranges it between the main body 111 and the alignment jig 200. Next, the control portion 2 controls the lifting mechanism (not shown in the figure) to lower the lifting pin 15. Thereby, the alignment jig 200 supported by the lifting pin 15 is held by the transport arm 500. Then, the control portion 2 controls the transport device to withdraw the transport arm 500 holding the alignment jig 200 from the transport port, and closes the gate valve.

In addition, in step S105, when the edge ring 112 is only temporarily fixed, the edge ring 112 can also be formally fixed before the protrusion 222 is extracted. In addition, the edge ring 112 can also be formally fixed after the protrusion 222 is extracted.

FIG. 13 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the processing of step S107 is completed. As described above, the edge ring 112 can be automatically replaced through the transfer port without opening the top of the plasma processing chamber 10. In addition, the edge ring 112 does not cross over the substrate support surface, but is set on the annular support surface. In addition, the interval between the gap between the edge ring facing surface 111c1 and the inner peripheral surface 112c is managed by the thickness of the protrusion 222 at multiple positions in the peripheral direction, and the edge ring 112 is set centered relative to the main body 111. In addition, since the centering of the edge ring 112 can be managed by the thickness of the centering piece 220, it can be centered with a higher accuracy than the edge ring 112 is transported by the transport arm 500 of the transport device.

<Setting process of the cover ring> The process of setting the cover ring 113 in the annular region 111b of the main body 111 is described with reference to FIGS. 14 to 23. FIG. 14 is an example of a flow chart for describing the process of setting the cover ring 113 in the annular region 111b of the main body 111. FIGS. 15 to 23 are examples of partially enlarged cross-sectional views of the substrate support portion 11 in various states. In addition, in the following description, the diagram of the inclined surface 211b formed in the groove 211 of the substrate 210 is omitted.

The process of setting the cover ring 113 in the annular region 111b of the main body 111 will be described with reference to FIG. 14 and FIG. 15 to FIG. 23 as appropriate. Here, the inner circumferential surface 113c of the cover ring 113 is used as the position alignment target surface, and the cover ring opposing surface 111c2 that is opposite to the inner circumferential surface 113c is used as the opposing surface opposite to the position alignment target surface. The cover ring 113 is set on the annular support surface (annular region 111b) of the main body 111 while managing the gap between the position alignment target surface and the opposing surface. In this way, the cover ring 113 is set centered with respect to the main body 111 as the installed component.

In step S201 , the alignment jig 200 is transported to the plasma processing chamber 10 .

FIG. 15 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the alignment jig 200 is transported into the plasma processing chamber 10 in step S201. The control portion 2 opens the gate and controls the transport device to transport the transport arm 500 holding the alignment jig 200 from the transport port to the plasma processing chamber 10, and then disposes the alignment jig 200 on the central area 111a of the body 111.

In step S202 , the position alignment jig 200 is received from the transfer arm 500 by the lift pins 15 and is placed on the substrate supporting surface of the electrostatic chuck 1111 .

FIG. 16 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the position alignment jig 200 is received by the lifting pins 15 in step S202. The control unit 2 controls the lifting mechanism (not shown in the figure) to raise the lifting pins 15. As a result, the upper end of the lifting pins 15 abuts against the bottom surface of the position alignment jig 200, and the position alignment jig 200 is lifted from the transport arm 500 by the lifting pins 15, and the position alignment jig 200 is supported by the lifting pins 15. Then, the control unit 2 controls the transport device to withdraw the transport arm 500 from the transport port and close the gate.

FIG. 17 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the position alignment jig 200 is set on the electrostatic chuck 1111 in step S202. The control portion 2 controls the lifting mechanism (not shown in the figure) to lower the lifting pins 15. Thereby, the position alignment jig 200 supported by the lifting pins 15 is set on the substrate support surface.

In addition, the control unit 2 controls the electrostatic chuck power supply (not shown in the figure) to apply voltage to the electrostatic electrode 1111b to fix the alignment jig 200 to the main body 111. In addition, the method of fixing the alignment jig 200 to the main body 111 is not limited to this, and it can also be fixed by other fixing methods. For example, it can also be a structure of "making the gap between the back of the alignment jig 200 and the central area 111a more highly vacuumed than the plasma processing space 10s, and fixing the alignment jig 200 to the main body 111 by the pressure difference between the top side and the bottom side of the alignment jig 200". At this time, the substrate 210 can also be formed of materials such as ceramics or resins. Alternatively, the positioning jig 200 may be fixed to the main body 111 by its own weight.

In step S203 , the cover ring 113 is transported into the plasma processing chamber 10 .

FIG18 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the cover ring 113 is transported into the plasma processing chamber 10 in step S203. The control portion 2 opens the gate valve and controls the transport device to transport the transport arm 500 holding the cover ring 113 from the transport port to the plasma processing chamber 10, and then arranges the cover ring 113 on the annular region 111b (cover ring support surface 111b2) of the body portion 111.

In step S204, the cover ring 113 is received from the transfer arm 500 by the lifting pin 16 and is set on the annular supporting surface of the electrostatic chuck 1111.

FIG. 19 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the cover ring 113 is received by the lifting pins 16 in step S204. The control portion 2 controls the lifting mechanism (not shown in the figure) to raise the lifting pins 16. Here, the lifting pins 16 have a thin diameter portion 161 on the upper side and a thick diameter portion 162 on the lower side. The thin diameter portion 161 is inserted through the through hole 113d of the cover ring 113, and the upper end of the thick diameter portion 162 of the lifting pin 16 abuts against the bottom surface of the cover ring 113. The cover ring 113 is lifted up from the transfer arm 500 by the lifting pins 16, and the cover ring 113 is supported by the lifting pins 16. Then, the control unit 2 controls the transport device to make the transport arm 500 withdraw from the transport port and close the gate.

FIG. 20 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the lifting pins 16 are descending in step S204. The control portion 2 controls the lifting mechanism (not shown in the figure) to lower the lifting pins 16. Here, the covering ring 113 descends, and the bottom surface 112a contacts the top surface of the protrusion 222, and the protrusion 222 is deformed due to the weight of the covering ring 113 itself. Then, the protrusion 222 is further deformed, whereby the bottom surface of the protrusion 222 abuts against the edge of the substrate support surface and the covering ring opposing surface 111c2. As a result, the protrusion 222 is tilted. The horizontal position of the descending covering ring 113 is guided by the tilt of the protrusion 222. For example, when the center position of the cover ring 113 supported by the lifting pins 16 is arranged to be offset relative to the center position of the main body 111, the cover ring 113 is guided by the inclination of the protrusion 222 to adjust the horizontal position of the cover ring 113. In this way, the cover ring 113 is prevented from crossing over the substrate support surface and being unable to be set on the annular support surface.

FIG. 21 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the cover ring 113 is set on the electrostatic chuck 1111 in step S204. The control portion 2 controls the lifting mechanism (not shown in the figure) to further lower the lifting pin 16. As a result, the cover ring 113 is supported by contacting with the cover ring support surface 111b2. In addition, the length of the protrusion 222 is formed to reach the length of the gap between the inner peripheral surface 113c of the cover ring 113 and the cover ring opposing surface 111c2. As a result, the protrusion 222 is configured to be clamped in the gap between the cover ring opposing surface 111c2 and the inner peripheral surface 113c. Here, a plurality of centering pieces 220 are provided in the circumferential direction, whereby the interval between the cover ring facing surface 111c2 and the inner circumferential surface 113c is controlled at a plurality of positions in the circumferential direction by the thickness of the protrusion 222. Thus, the cover ring 113 is provided centered relative to the main body 111.

In addition, the length of the protrusion 222 is formed to be not to reach the length of the cover ring support surface 111b2. Thus, the protrusion 222 is prevented from being sandwiched between the bottom surface 112a of the cover ring 113 and the cover ring support surface 111b2.

In addition, the cover ring 113 is fixed to the main body 111 by its own weight.

In step S205 , the position alignment jig 200 is supported by the lift pins 15 .

First, when the alignment jig 200 is fixed to the main body 111 in step S202, the alignment jig 200 is released.

Next, the control unit 2 controls the lifting mechanism (not shown in the figure) to raise the lifting pin 15. As a result, the upper end of the lifting pin 15 abuts against the bottom surface of the positioning jig 200, and the positioning jig 200 is lifted from the substrate support surface by the lifting pin 15, so that the positioning jig 200 leaves the substrate support surface. In addition, the protrusion 222 arranged in the gap between the covering ring opposing surface 111c2 and the inner peripheral surface 113c is pulled out. At this time, the covering ring 113 is fixed to the main body 111 by its own weight, and when the protrusion 222 is pulled out from between the covering ring opposing surface 111c2 and the inner peripheral surface 113c, the position of the covering ring 113 can be prevented from shifting. Then, by the restoring force of the centering piece 220, the protrusion 222 returns to a roughly horizontal state.

In step S206 , the alignment jig 200 is moved out of the plasma processing chamber 10 .

FIG. 22 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the alignment jig 200 is transported into the plasma processing chamber 10 in step S206. The control portion 2 opens the gate valve and controls the transport device to transport the transport arm 500 from the transport port to the plasma processing chamber 10, and then arranges it between the main body 111 and the alignment jig 200. Next, the control portion 2 controls the lifting mechanism (not shown in the figure) to lower the lifting pin 15. Thereby, the alignment jig 200 supported by the lifting pin 15 is held by the transport arm 500. Then, the control portion 2 controls the transport device to withdraw the transport arm 500 holding the alignment jig 200 from the transport port, and closes the gate valve.

FIG. 23 is an example of a partially enlarged cross-sectional view of the substrate support portion 11 in a state where the processing of step S206 is completed. As described above, the cover ring 113 can be automatically replaced through the transfer port without opening the top of the plasma processing chamber 10. In addition, the cover ring 113 does not cross over the substrate support surface, but is set on the annular support surface. In addition, the interval between the gap between the cover ring facing surface 111c2 and the inner peripheral surface 113c is managed by the thickness of the protrusion 222 at multiple positions in the peripheral direction, and the cover ring 113 is set centered relative to the main body 111. In addition, since the centering of the cover ring 113 can be managed by the thickness of the centering piece 220, it is possible to center the cover ring 113 with a higher accuracy than the conveying accuracy of the conveying arm 500 of the conveying device.

As described above, the arrangement and processing of the position alignment jig 200 and the annular component using the position alignment jig 200 are described, but the present invention is not limited thereto.

The ring-shaped components that are aligned and arranged are described with reference to the edge ring 112 and the cover ring 113 as examples, but are not limited thereto. The present invention can also be applied to other ring-shaped components arranged in the plasma processing chamber 10.

In addition, the centering pieces 220 are described as being "plural in number along the outer periphery of the substrate 210", but the present invention is not limited thereto. The centering pieces 220 may also be formed in a ring shape around the entire periphery of the substrate 210.

The electrostatic electrode 1111b can be a unipolar electrostatic chuck or a bipolar electrostatic chuck. When it is a unipolar one, the position alignment jig 200 is adsorbed and held on the main body 111 by the potential difference between the plasma and the electrostatic electrode 1111b. When it is a bipolar one, the electrostatic electrode 1111b is divided into an inner electrode and an outer electrode (not shown in the figure), and the position alignment jig 200 is adsorbed and held on the main body 111 by the potential difference between the inner electrode and the outer electrode. Similarly, the electrostatic electrode 1111c can be a unipolar electrostatic chuck or a bipolar electrostatic chuck.

In addition, the length of the protrusion 222 is described as "formed into a length in which the annular member (edge ring 112, covering ring 113) is set on the annular support surface (edge ring support surface 111b1, covering ring support surface 111b2) and the protrusion 222 does not reach (does not contact) the annular support surface of the annular member when it is bent", but is not limited to this.

FIG. 24 is another example of a partially enlarged cross-sectional view of the substrate support portion 11. The edge ring 112 may also form a circular pit (notch) 112d on the inner circumference of the bottom surface 112a. Thus, even if the protrusion 222 is formed to a length that reaches the edge ring support surface 111b1, when the edge ring 112 is placed on the edge ring support surface 111b1, the front end portion of the protrusion 222 can still be arranged in the space between the pit 112d and the edge ring support surface 111b1. In addition, the side surface 112d1 of the pit 112d is formed at a position that the front end of the protrusion 222 will not reach (will not contact). Thereby, the protrusion 222 is prevented from being caught between the bottom surface 112a of the edge ring 112 and the edge ring supporting surface 111b1.

Similarly, the cover ring 113 may also be provided with a circular pit (notch) on the inner circumference of the bottom surface 113a. Thus, even when the protrusion 222 is formed to a length that reaches the cover ring support surface 111b2, when the cover ring 113 is placed on the cover ring support surface 111b2, the front end of the protrusion 222 can be arranged in the space between the pit and the cover ring support surface 111b2. In addition, the side surface of the pit is formed at a position where the front end of the protrusion 222 does not reach (does not contact). Thus, the protrusion 222 is prevented from being sandwiched between the bottom surface 113a of the cover ring 113 and the cover ring support surface 111b2.

[Substrate processing system] Referring to FIG. 25 , a substrate processing system PS of an implementation example is described. FIG. 25 is a diagram showing an example of a substrate processing system PS of an implementation example. As shown in FIG. 25 , the substrate processing system PS is a system that can perform various processes such as plasma processing on a substrate W. The substrate W can be, for example, a semiconductor wafer.

The substrate processing system PS comprises: a vacuum transport module TM, a plurality of processing modules PM1 to PM7, a ring storage module RSM, a plurality of load lock modules LL1 to LL3, an atmosphere transport module LM, loading ports LP1 to LP4, an aligner AN, and a control unit CU. The vacuum transport module TM is also called a transfer module. The processing modules PM1 to PM7 are also called a program module. The ring storage module RSM is also called a ring storage module. The atmosphere transport module LM is also called a loading module.

The vacuum transfer module TM has a quadrangular shape in a plan view. The vacuum transfer module TM is connected to the processing modules PM1 to PM7, the load lock modules LL1 to LL3, and the ring storage module RSM. The vacuum transfer module TM has a vacuum transfer chamber. The inside of the vacuum transfer chamber maintains a vacuum environment. A transfer robot TR1 is installed in the vacuum transfer chamber (inside the vacuum transfer module TM).

The transport robot TR1 is configured to rotate, extend, and rise and fall at will. The transport robot TR1 has an upper fork FK1 and a lower fork FK2. The upper fork FK1 and the lower fork FK2 of the transport robot TR1 are configured to hold the substrate W, the annular component (edge ring 112, cover ring 113), and the position alignment fixture 100. The transport robot TR1 holds and transports the substrate W, the annular component (edge ring 112, cover ring 113), and the position alignment fixture 100 between the processing modules PM1 to PM7, the loading lock modules LL1 to LL3, and the ring storage module RSM.

A position detection sensor S1 is provided at the upper fork portion FK1. A position detection sensor S2 is provided at the lower fork portion FK2. The position detection sensors S1 and S2 detect the positions of the substrate W, the annular components (edge ring 112, the cover ring 113) and the position alignment fixture 100 carried by the processing modules PM1 to PM7. The position detection sensors S1 and S2 may be, for example, optical displacement sensors, cameras, etc. The position detection sensors S1 and S2 detect the edge of the substrate 210 at a plurality of points, for example, to calculate the center position of the substrate 210. In addition, the centering piece 220 is light-transmissive, and the position detection sensors S1 and S2 can see through the centering piece 220 to detect the edge of the substrate 210.

Position detection sensors S11 and S12 may also be provided in the vacuum transport module TM. The position detection sensors S11 and S12 are provided on the transport path of the substrate W, the annular member (edge ring 112, cover ring 113) and the position alignment jig 100 transported from the vacuum transport module TM to the processing module PM1. The position detection sensors S11 and S12 are used when "any one of the substrate W, the annular member (edge ring 112, cover ring 113) and the position alignment jig 100 is carried into the processing module PM1 from the vacuum transport module TM" and "any one of the substrate W, the annular member (edge ring 112, cover ring 113) and the position alignment jig 100 is carried out from the processing module PM1 to the vacuum transport module TM". The position detection sensors S11 and S12 are, for example, provided near a gate (not shown in the figure) that separates the vacuum transport module TM from the processing module PM1. The position detection sensors S11 and S12 are configured, for example, in such a manner that the distance between them is smaller than the outer diameter of the substrate W and smaller than the inner diameter of the edge ring 112. The position detection sensors S11 and S12 are optical sensors, and detect the edge of the substrate 210 at a plurality of points, for example, to calculate the center position of the substrate 210. In addition, the centering piece 220 is light-transmissive, and the position detection sensors S11 and S12 can see through the centering piece 220 to detect the edge of the substrate 210. Thus, when the center position of the substrate 210 detected by the position detection sensors S11 and S12 deviates from the reference position of the fork FK1 (or FK2) holding the substrate W, the control unit CU controls the transport robot TR1 to align the center of the position alignment jig 100 with the center of the substrate support 11. In the vacuum transfer module TM, position detection sensors S21, S22, S31, S32, S41, S42, S51, S52, S61, S62, S71, and S72 may be provided similarly to the position detection sensors S11 and S12.

Processing modules PM1 to PM7 are connected to vacuum transport module TM. Processing modules PM1 to PM7 have vacuum processing chambers. A substrate support portion 11 is provided inside the vacuum processing chamber (see FIG. 1 ). After substrate W is placed on substrate support portion 11, processing modules PM1 to PM7 depressurize the interior and introduce processing gas, then apply RF power to generate plasma, and then use plasma to perform plasma processing on substrate W. Vacuum transport module TM and processing modules PM1 to PM7 are separated by a gate (not shown in the figure) that can be opened and closed at will.

The ring storage module RSM is an example of a device that stores ring-shaped components (edge ring 112, cover ring 113) with a radius larger than that of the substrate W, and is connected to the vacuum transport module TM. The ring storage module RSM, for example, stores the edge ring 112 and the cover ring 113 that constitute the ring component 114. The ring storage module RSM can also be configured to store only the edge ring 112. The ring storage module RSM can also be configured to store only the cover ring 113. The edge ring 112 and the cover ring 113 are transported between the processing modules PM1 to PM7 and the ring storage module RSM by the transport robot TR1. The Vacuum Transfer Module TM and the Ring Storage Module RSM are separated by a gate valve (not shown) that can be opened and closed at will.

In addition, the ring storage module RSM stores the alignment jig 200 having a larger radius than the substrate W. The alignment jig 200 is transported by the transport robot TR1 between the processing modules PM1 to PM7 and the ring storage module RSM. In this way, the alignment jig 200 having a larger radius than the substrate W can be stored in the ring storage module RSM.

The loading lock modules LL1 to LL3 are arranged between the vacuum transport module TM and the atmospheric transport module LM. The loading lock modules LL1 to LL3 are connected to the vacuum transport module TM and the atmospheric transport module LM. The loading lock modules LL1 to LL3 have a variable internal pressure chamber that can switch between vacuum and atmospheric pressure. A platform (not shown in the figure) on which the substrate W can be placed is provided in the variable internal pressure chamber. When the substrate W is transported from the atmospheric transport module LM to the vacuum transport module TM, the loading lock modules LL1 to LL3 maintain the variable internal pressure chamber at atmospheric pressure, receive the substrate W from the atmospheric transport module LM, then depressurize the variable internal pressure chamber, and transfer the substrate W to the vacuum transport module TM. When transferring the substrate W from the vacuum transfer module TM to the atmosphere transfer module LM, the load lock modules LL1 to LL3 maintain the variable pressure chamber in vacuum, receive the substrate W from the vacuum transfer module TM, then increase the pressure of the variable pressure chamber to atmospheric pressure, and transfer the substrate W to the atmosphere transfer module LM. The load lock modules LL1 to LL3 are separated from the vacuum transfer module TM by a gate valve (not shown in the figure) that can be opened and closed at will. The load lock modules LL1 to LL3 are separated from the atmosphere transfer module LM by a gate valve (not shown in the figure) that can be opened and closed at will.

The atmospheric transport module LM is arranged to face the vacuum transport module TM. The atmospheric transport module LM may be, for example, an EFEM (Equipment Front End Module). The atmospheric transport module LM has a quadrilateral shape when viewed from above. The atmospheric transport module LM has an atmospheric transport chamber. The interior of the atmospheric transport chamber maintains an atmospheric pressure environment. A transport robot TR2 is provided inside the atmospheric transport chamber. The transport robot TR2 is configured to be able to rotate, extend, and rise and fall at will. The transport robot TR2, like the transport robot TR1, has two forks (an upper fork and a lower fork) that can hold and transport the substrate W. The transport robot TR2 holds and transports the substrate W between the loading ports LP1 to LP4, the aligner AN, and the load lock modules LL1 to LL3. The atmosphere handling module LM may also have a FFU (Fan Filter Unit).

The loading ports LP1 to LP4 are connected to the atmospheric transport module LM. A plurality of substrate storage containers CS1 are loaded on the loading ports LP1 to LP4. The substrate storage container CS1 may be, for example, a FOUP (Front-Opening Unified Pod) that stores a plurality of (for example, 25) substrates W.

The aligner AN is connected to the atmospheric transport module LM. The aligner AN is configured to adjust the position of the substrate W. The aligner AN may also be disposed inside the atmospheric transport chamber.

The control unit CU controls various parts of the substrate processing system PS. The control unit CU controls, for example, the movement of the transport robot TR1 installed in the vacuum transport module TM, the movement of the transport robot TR2 installed in the atmosphere transport module LM, and the opening and closing of the gate. The control unit CU can be, for example, a computer. The control unit CU has a CPU (Central Processing Unit) as a processor, a RAM (Random Access Memory), a ROM (Read Only Memory), an auxiliary memory device, etc. The CPU operates according to the program stored in the ROM or the auxiliary memory device to control various parts of the substrate processing system PS.

The embodiments disclosed above include, for example, the following embodiments. (Note 1) A jig used when an annular component is set on an annular support surface of a set component, characterized by comprising: a substrate; and a sheet component having a fixing portion fixed to the substrate and a protruding portion protruding from the side surface of the substrate. (Note 2) The jig as described in Note 1, wherein the substrate includes three or more sheet components. (Note 3) A jig as described in Note 1 or Note 2, wherein the protrusion has a length that reaches the gap between the position alignment target surface of the annular member and the opposing surface of the member to be set opposite to the position alignment target surface when the annular member is set on the annular support surface, and does not reach the annular support surface. (Note 4) A jig as described in any one of Notes 1 to 3, wherein the sheet member is formed of polyimide. (Note 5) A jig as described in any one of Notes 1 to 4, wherein the substrate is formed of silicon. (Note 6) A jig as described in any one of Notes 1 to 5, wherein the substrate has a groove portion for configuring the fixing portion. (Note 7) A jig as described in Note 6, wherein the substrate comprises: a first surface that is supported by contacting the substrate support surface when the substrate is configured on the substrate support surface of the component to be installed; and a second surface that is a surface on the opposite side of the first surface; and the groove portion is formed on the second surface. (Note 8) A jig as described in Note 6 or Note 7, wherein the fixing portion is fixed to the groove portion by bonding. (Note 9) A method for aligning a position, comprising: a step of setting a jig on a substrate support surface of a component to be set; the jig comprises: a substrate; and a sheet component having a fixing portion fixed to the substrate and a protruding portion protruding from a side surface of the substrate; a step of deforming the protruding portion, arranging the sheet component in a gap between a position alignment target surface of an annular component and an opposing surface of the component to be set facing the position alignment target surface, and setting the annular component on the annular support surface of the component to be set; and a step of leaving the jig from the substrate support surface and extracting the sheet component from the gap between the position alignment target surface and the opposing surface. (Note 10) As described in Note 9, the positioning member is a main body of a substrate support; the step of placing the fixture on the substrate support surface includes: raising a first lift pin that can be raised from the substrate support surface; supporting the fixture with the first lift pin; and lowering the first lift pin to place the fixture on the substrate support surface; placing the annular member The step of moving the fixture away from the substrate support surface comprises: raising the second lift pin that can be raised from the annular support surface; supporting the annular component with the second lift pin; and lowering the second lift pin to place the annular component on the annular support surface; the step of moving the fixture away from the substrate support surface comprises: raising the first lift pin to move the fixture away from the substrate support surface. (Note 11) The alignment method as described in Note 9 or Note 10, wherein the annular component is an edge ring. (Note 12) The alignment method as described in Note 9 or Note 10, wherein the annular component is a cover ring. (Note 13) The alignment method as described in any one of Notes 9 to 12, wherein after the step of placing the annular member on the annular support surface and before the step of allowing the fixture to leave the substrate support surface, further comprises the step of fixing the annular member. (Note 14) The alignment method as described in Note 13, wherein the step of fixing the annular member is to vacuum adsorb the annular member. (Note 15) The alignment method as described in Note 13, wherein the step of fixing the annular member is to electrostatically adsorb the annular member.

In addition, the structures listed in the above embodiments can be combined with other elements, but the present invention is not limited to the structures shown here. These features can be changed within the scope of the present invention and are appropriately determined according to the application.

In addition, this case claims priority based on Japanese Patent Application No. 2022-131235 filed on August 19, 2022, and this case incorporates the entire contents of that Japanese Patent Application by reference.

1: Plasma processing device 2a: Computer 2a1: Processing unit 2a2: Memory unit 2a3: Communication interface 2: Control unit 10: Plasma processing chamber 10a: Side wall 10e: Gas exhaust port 10s: Plasma processing space 11: Substrate support unit 13: Shower head 13a: Gas supply port 13b: Gas diffusion chamber 13c: Gas inlet 15: Lifting pin (first lift pin) 16: Lifting pin (second lift pin) 20: Gas supply unit 21: Gas source 22: Flow controller 30: Power supply 31: RF (radio frequency) power supply 31a: First RF signal generating unit 31b: 2nd RF signal generating unit 32: DC (direct current) power supply 32a: 1st DC signal generating unit 32b: 2nd DC signal generating unit 40: exhaust system 111a: central area 111b1: edge ring supporting surface 111b2: cover ring supporting surface 111b: annular area 111c1: edge ring facing surface (facing surface) 111c2: cover ring facing surface (facing surface) 111: body 112a: bottom surface 112c: inner peripheral surface (position alignment target surface) 112d: pit (notch) 112d1: side surface 112: edge ring (annular member) 113a: bottom surface 113b: edge ring support surface 113c: inner peripheral surface (position alignment target surface) 113d: through hole 113: cover ring (ring-shaped component) 114: ring-shaped component 161: thin diameter part 162: thick diameter part 200: position alignment fixture (fixture) 210: substrate 211a: side wall 211b: inclined surface 211~213: groove 220: centering piece 221a: side wall 221: fixed part 222: protrusion 500: transport arm 1110a: circulation pipeline 1110: base 1111a: Ceramic component 1111b, 1111c: Electrostatic electrode 1111: Electrostatic chuck AN: Alignment device CS1: Substrate storage container CU: Control unit FK1: Upper fork FK2: Lower fork LL1~LL3: Loading lock module LM: Atmospheric transport module LP1~LP4: Loading port PM1~PM7: Processing module PS: Substrate processing system RSM: Ring storage module S1, S2, S11, S12, S21, S22, S31, S32, S41, S42, S51, S52, S61, S62, S71, S72: Position detection sensor S101~S107, S201~S206: Steps TM: Vacuum handling module TR1, TR2: Handling robot W: Substrate

[FIG. 1] is an example of a diagram for explaining a structural example of a plasma processing device. [FIG. 2] is an example of a three-dimensional diagram of a positioning jig. [FIG. 3] is an example of a partially enlarged three-dimensional diagram of a positioning jig. [FIG. 4] is an example of a flow chart for explaining a process when an edge ring is set in an annular region of a main body. [FIG. 5] is an example of a partially enlarged cross-sectional diagram of a substrate support portion in each state. [FIG. 6] is an example of a partially enlarged cross-sectional diagram of a substrate support portion in each state. [FIG. 7] is an example of a partially enlarged cross-sectional diagram of a substrate support portion in each state. [FIG. 8] is an example of a partially enlarged cross-sectional diagram of a substrate support portion in each state. [FIG. 9] is an example of a partially enlarged cross-sectional diagram of a substrate support portion in each state. [FIG. 10] is an example of a partially enlarged cross-sectional diagram of a substrate support portion in each state. [Fig. 11] is an example of a partial enlarged cross-sectional view of a substrate support portion in each state. [Fig. 12] is an example of a partial enlarged cross-sectional view of a substrate support portion in each state. [Fig. 13] is an example of a partial enlarged cross-sectional view of a substrate support portion in each state. [Fig. 14] is an example of a flow chart for explaining a process when a cover ring is set in an annular region of a main body portion. [Fig. 15] is an example of a partial enlarged cross-sectional view of a substrate support portion in each state. [Fig. 16] is an example of a partial enlarged cross-sectional view of a substrate support portion in each state. [Fig. 17] is an example of a partial enlarged cross-sectional view of a substrate support portion in each state. [Fig. 18] is an example of a partial enlarged cross-sectional view of a substrate support portion in each state. [Fig. 19] is an example of a partial enlarged cross-sectional view of a substrate support portion in each state. [Fig. 20] is an example of a partially enlarged cross-sectional view of a substrate support portion in each state. [Fig. 21] is an example of a partially enlarged cross-sectional view of a substrate support portion in each state. [Fig. 22] is an example of a partially enlarged cross-sectional view of a substrate support portion in each state. [Fig. 23] is an example of a partially enlarged cross-sectional view of a substrate support portion in each state. [Fig. 24] is another example of a partially enlarged cross-sectional view of a substrate support portion. [Fig. 25] is a diagram showing an example of a substrate processing system of an implementation mode.

200: Position alignment jig (jig)

210: Substrate

211~213: Groove

220: Centering piece

Claims (15)

A jig used when placing an annular component on an annular support surface of a component to be placed, comprising: a substrate; and a sheet component having a fixing portion fixed to the substrate and a protruding portion protruding from a side surface of the substrate. As in claim 1, the jig, wherein, the substrate comprises 3 or more sheet members. A jig as claimed in claim 2, wherein, the protrusion has a length that reaches the gap between the position alignment object surface of the annular member and the opposing surface of the member to be set facing the position alignment object surface when the annular member is set on the annular support surface, and does not reach the annular support surface. A jig as claimed in claim 3, wherein the sheet member is formed of polyimide. A fixture as claimed in claim 4, wherein the substrate is formed of silicon. A fixture as claimed in claim 1, wherein the substrate has a groove for configuring the fixing portion. A jig as claimed in claim 6, wherein: the substrate has: a first surface which is supported by contacting the substrate support surface when the substrate is arranged on the substrate support surface of the component to be set; and a second surface which is a surface on the opposite side of the first surface; the groove is formed on the second surface. As in claim 6, the fixture, wherein the fixing portion is fixed to the groove portion by bonding. A position alignment method, comprising: The step of setting a jig on a substrate support surface of a component to be set; the jig comprises: a substrate; and a sheet component having a fixing portion fixed to the substrate and a protruding portion protruding from a side surface of the substrate; The step of deforming the protruding portion, arranging the sheet component in a gap between a position alignment target surface of an annular component and an opposing surface of the component to be set facing the position alignment target surface, and setting the annular component on the annular support surface of the component to be set; and The step of leaving the jig from the substrate support surface and extracting the sheet component from the gap between the position alignment target surface and the opposing surface. A method for aligning a position as claimed in claim 9, wherein: the component to be set is the main body of the substrate support; the step of setting the fixture on the substrate support surface comprises: the step of raising the first lift pin that can be raised from the substrate support surface; the step of supporting the fixture with the first lift pin; and the step of lowering the first lift pin to place the fixture on the substrate support surface; the step of setting the annular component on the annular support surface comprises: the step of raising the second lift pin that can be raised from the annular support surface; the step of supporting the annular component with the second lift pin; and the step of lowering the second lift pin to place the annular component on the annular support surface; The step of making the fixture leave the substrate support surface includes: The step of making the first lifting pin rise to make the fixture leave the substrate support surface. As in claim 10, the positioning method, wherein, the annular component is an edge ring. As in claim 10, the positioning method, wherein, the annular component is a covering ring. As in claim 11, the method for aligning the annular member further comprises a step of fixing the annular member after the step of placing the annular member on the annular support surface and before the step of making the fixture leave the substrate support surface. As in claim 13, the method for aligning the ring-shaped member, wherein the step of fixing the ring-shaped member is to vacuum-absorb the ring-shaped member. As in claim 13, the method for aligning the ring-shaped member, wherein the step of fixing the ring-shaped member is to electrostatically adsorb the ring-shaped member.

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