TW202421317A - Circuit processing system - Google Patents
Circuit processing system Download PDFInfo
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- TW202421317A TW202421317A TW111145339A TW111145339A TW202421317A TW 202421317 A TW202421317 A TW 202421317A TW 111145339 A TW111145339 A TW 111145339A TW 111145339 A TW111145339 A TW 111145339A TW 202421317 A TW202421317 A TW 202421317A
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- 238000009713 electroplating Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000010329 laser etching Methods 0.000 claims abstract description 22
- 239000002923 metal particle Substances 0.000 claims abstract description 12
- 238000007747 plating Methods 0.000 claims description 15
- 238000012544 monitoring process Methods 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
本申請涉及電路板加工,尤其涉及一種線路加工系統。The present application relates to circuit board processing, and more particularly to a circuit processing system.
鐳射加工兼有加工精度高、工藝流程簡單與綠色環保之特點,目前鐳射加工技術已經開始應用於電路板加工領域,然當前之鐳射加工系統對於線路加工之效率低,且靈活性不佳。Laser processing has the characteristics of high processing precision, simple process flow and green environmental protection. Currently, laser processing technology has begun to be applied to the field of circuit board processing. However, the current laser processing system has low efficiency and poor flexibility for circuit processing.
爲解決習知技術以上不足之處,本申請提供一種具有線路加工系統。To solve the above deficiencies of the prior art, the present application provides a circuit processing system.
一種線路加工系統,用於在絕緣基板製作線路,所述絕緣基板包括金屬顆粒,所述線路加工系統包括:A circuit processing system is used to manufacture circuits on an insulating substrate, wherein the insulating substrate includes metal particles. The circuit processing system includes:
鐳射蝕刻單元,所述鐳射蝕刻單元包括鐳射源、分光器、及多個出光組件,所述鐳射源用於發射第一鐳射束,所述分光器用於將所述第一鐳射束分爲多個第二鐳射束,每一所述出光組件用於將一所述第二鐳射束轉換爲一加工鐳射束,多個所述加工鐳射束用於分別於所述絕緣基板之不同表面同時蝕刻形成凹槽,所述加工鐳射束燒蝕所述金屬顆粒以於所述凹槽之內周形成電鍍基底層;A laser etching unit, the laser etching unit comprising a laser source, a beam splitter, and a plurality of light emitting components, the laser source is used to emit a first laser beam, the beam splitter is used to split the first laser beam into a plurality of second laser beams, each of the light emitting components is used to convert one of the second laser beams into a processing laser beam, the plurality of processing laser beams are used to simultaneously etch grooves on different surfaces of the insulating substrate, the processing laser beams ablate the metal particles to form an electroplated base layer on the inner periphery of the groove;
電鍍單元,所述電鍍單元包括電鍍夾具以及電源,所述電鍍夾具夾持所述絕緣基板且電性連接所述電鍍基底層,所述電源連接所述電鍍夾具以提供於所述電鍍基底層上形成一電鍍線路所需之電流。The electroplating unit includes an electroplating fixture and a power source. The electroplating fixture holds the insulating substrate and is electrically connected to the electroplating base layer. The power source is connected to the electroplating fixture to provide a current required to form a plating circuit on the electroplating base layer.
進一步地,每一所述出光組件包括振鏡及場鏡,所述振鏡用於偏轉所述第二鐳射束,所述場鏡用於彙聚偏置之所述第二鐳射束以形成所述加工鐳射束。Furthermore, each of the light-emitting components includes a diaphragm and a field lens, wherein the diaphragm is used to deflect the second laser beam, and the field lens is used to converge the biased second laser beam to form the processing laser beam.
進一步地,所述鐳射蝕刻單元還包括光束整形器,所述光束整形器設置於所述鐳射源與所述分光器之間。Furthermore, the laser etching unit further comprises a beam shaper, and the beam shaper is arranged between the laser source and the beam splitter.
進一步地,所述鐳射蝕刻單元還包括光遮罩組件,所述光遮罩組件設置於所述分光器與所述振鏡之間,所述光遮罩組件包括驅動件及遮光板,所述遮光板貫穿設有通光孔,所述驅動件帶動所述遮光板移動,使得所述第二鐳射束穿過所述通光孔,或者使得所述第二鐳射束被所述遮光板遮擋。Furthermore, the laser etching unit also includes a light shield assembly, which is arranged between the beam splitter and the oscillating mirror. The light shield assembly includes a driver and a light shielding plate. The light shielding plate is penetrated by a light-through hole. The driver drives the light shielding plate to move so that the second laser beam passes through the light-through hole, or the second laser beam is blocked by the light shielding plate.
進一步地,所述鐳射蝕刻單元還包括多個能量監控模塊,每一所述能量監控模塊連接所述分光器,所述能量監控模塊用於檢測每一所述第二鐳射束之能量值,並依據多個所述能量值之間之差异生産控制指令,所述分光器依據所述控制指令平均分配所述第一鐳射束之能量。Furthermore, the laser etching unit also includes a plurality of energy monitoring modules, each of which is connected to the spectrometer. The energy monitoring module is used to detect the energy value of each of the second laser beams and generate control instructions based on the difference between the plurality of energy values. The spectrometer evenly distributes the energy of the first laser beam according to the control instructions.
進一步地,每一所述能量監控模塊包括反射鏡、聚焦透鏡、感測件、以及控制器,所述反射鏡用於反射所述第二鐳射束進入所述聚焦透鏡,所述聚焦透鏡設於所述感測件與所述反射鏡之間,所述聚焦透鏡用於彙聚由所述反射鏡反射之第二鐳射束至所述感測件,所述感測件連接所述控制器,所述感測件用於感測所述第二鐳射束之能量值,所述控制器接收所述能量值並依據所述能量值形成所述控制指令。Furthermore, each of the energy monitoring modules includes a reflector, a focusing lens, a sensor, and a controller. The reflector is used to reflect the second laser beam into the focusing lens. The focusing lens is arranged between the sensor and the reflector. The focusing lens is used to converge the second laser beam reflected by the reflector to the sensor. The sensor is connected to the controller. The sensor is used to sense the energy value of the second laser beam. The controller receives the energy value and forms the control instruction according to the energy value.
進一步地,所述第一鐳射束之脉寬爲皮秒級或飛秒級。Furthermore, the pulse width of the first laser beam is in the picosecond level or the femtosecond level.
進一步地,所述電鍍夾具包括第一夾持部、與所述第一夾持部間隔設置之第二夾持部,所述電源電性連接所述第一夾持部與所述第二夾持部,所述第一夾持部與所述第二夾持部均電性連接所述電鍍基底層。Furthermore, the electroplating clamp includes a first clamping part and a second clamping part spaced apart from the first clamping part, the power source electrically connects the first clamping part and the second clamping part, and the first clamping part and the second clamping part are both electrically connected to the electroplating base layer.
進一步地,所述電鍍槽包括底板及多個側板,多個所述側板設於所述底板之周緣以形成容置空間,所述容置空間可以用於容置所述電鍍液、所述電鍍夾具、以及設有凹槽之所述絕緣基板。Furthermore, the electroplating tank includes a bottom plate and a plurality of side plates, wherein the plurality of side plates are arranged around the bottom plate to form a receiving space, and the receiving space can be used to receive the electroplating solution, the electroplating fixture, and the insulating substrate having a groove.
進一步地,所述第一鐳射束之波長爲193~355納米,所述鐳射源之功率爲0.9~2.1瓦,或者所述鐳射源之功率爲0.9~3.11瓦,所述第一鐳射束之波長爲1030~1064納米。Furthermore, the wavelength of the first laser beam is 193-355 nanometers, and the power of the laser source is 0.9-2.1 watts, or the power of the laser source is 0.9-3.11 watts, and the wavelength of the first laser beam is 1030-1064 nanometers.
本申請提供之線路加工系統藉由將所述鐳射源發射之第一鐳射束分爲多個第二鐳射束,每一所述第二鐳射束可以於絕緣基板之一側面或者兩側面加工形成至少一個所述凹槽,並於該凹槽內燒蝕所述金屬顆粒,以形成電鍍基底層,然後藉由電鍍單元於所述電鍍基底層上形成線路。該線路加工系統可以同時於絕緣基板之一側面或者兩側面形成至少一個所述凹槽,從而有利於提高線路之製作效率。The circuit processing system provided by the present application divides the first laser beam emitted by the laser source into a plurality of second laser beams, each of which can form at least one groove on one side or both sides of the insulating substrate, and ablate the metal particles in the groove to form an electroplated base layer, and then form a circuit on the electroplated base layer by an electroplating unit. The circuit processing system can simultaneously form at least one groove on one side or both sides of the insulating substrate, thereby facilitating improving the manufacturing efficiency of the circuit.
下面將結合本申請實施例中之附圖,對本申請實施例中之技術方案進行清楚、完整地描述,顯然,所描述之實施例僅僅是本申請一部分實施例,而不是全部之實施例。The following will combine the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the described embodiments are only part of the embodiments of this application, not all of the embodiments.
需要說明的是,當元件被稱爲“固定於”另一個元件,它可以直接於另一個元件上或者亦可以存於居中之元件。當一個元件被認爲是“連接”另一個元件,它可以是直接連接到另一個元件或者可能同時存於居中元件。當一個元件被認爲是“設置於”另一個元件,它可以是直接設置於另一個元件上或者可能同時存於居中元件。It should be noted that when an element is said to be "fixed to" another element, it can be directly on the other element or can also be located in a central element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or can also be located in a central element. When an element is considered to be "set on" another element, it can be directly set on the other element or can also be located in a central element.
請參見圖1與圖5,本申請一實施例提供一種線路加工系統100,所述線路加工系統100可以用於在絕緣基板200上製作電鍍線路201。所述線路加工系統100包括鐳射蝕刻單元10與電鍍單元20。所述鐳射蝕刻單元10用於藉由鐳射蝕刻所述絕緣基板200,以於所述絕緣基板200之至少一表面形成凹槽202。所述電鍍單元20用於藉由電鍍反應於所述凹槽202之內周形成所述電鍍線路201。Please refer to FIG. 1 and FIG. 5 , an embodiment of the present application provides a
請參見圖2,所述鐳射蝕刻單元10包括鐳射源11、分光器12、以及多個出光組件13。所述鐳射源11用於發射出第一鐳射束111。所述分光器12用於將所述第一鐳射束111分爲多個第二鐳射束112,每一所述第二鐳射束112射向一個所述出光組件13。所述出光組件13用於將所述第二鐳射束112轉換爲加工鐳射束113,所述加工鐳射束113用於蝕刻所述絕緣基板200以形成凹槽202。具體地,所述鐳射源11爲光纖紫外鐳射器、半導體鐳射器、或者氣體鐳射器中之一種。所述第一鐳射束111之波長爲193~355納米,所述鐳射源之功率爲0.9~2.1瓦,或者所述鐳射源之功率爲0.9~3.11瓦,所述第一鐳射束111之波長爲1030~1064納米。所述分光器12包括分光片121及第一驅動件122,所述第一驅動件122可帶動所述分光片121移動,從而改變從所述分光片121射出之每一所述第二鐳射束112之能量密度。Please refer to FIG. 2 , the
請參見圖3,所述電鍍單元20包括電鍍槽21、電鍍液22、電鍍夾具23、以及電源24。所述電鍍液22及所述電鍍夾具23設置於所述電鍍槽21。所述電鍍夾具23夾持所述絕緣基板200,所述電鍍液22浸沒所述凹槽202。所述電源24連接所述電鍍夾具23以提供於所述凹槽202內形成所述電鍍線路201所需之電流。3 , the
請參見圖2與圖5,於本實施例中,所述絕緣基板200內分散有金屬顆粒204,所述加工鐳射束113燒蝕露出於所述凹槽202內周之金屬顆粒204,從而形成所述電鍍基底層203。所述電鍍夾具23電性連接所述電鍍基底層203,當所述電源24提供電流後,所述電鍍基底層203上即可電鍍形成所述電鍍線路201。具體地,所述金屬顆粒204爲低熔點合金顆粒。Please refer to FIG. 2 and FIG. 5. In this embodiment,
本申請提供之線路加工系統100藉由將所述鐳射源11發射之第一鐳射束111分爲多個第二鐳射束112,每一所述第二鐳射束112可以於絕緣基板200之一側面或者兩側面加工形成至少一個所述凹槽202,並於該凹槽202內燒蝕所述金屬顆粒,以形成電鍍基底層203,然後藉由電鍍單元20於所述電鍍基底層203上形成電鍍線路201。該線路加工系統100可以同時於絕緣基板200之一側面或者兩側面形成至少一個所述凹槽202,從而有利於提高電鍍線路201之製作效率。The
請參見圖2,於本實施例中,每一所述出光組件13包括振鏡131與場鏡132。所述振鏡131用於偏轉所述第二鐳射束112,所述場鏡132用於彙聚偏轉之所述第二鐳射束112以形成所述加工鐳射束113。具體地,所述振鏡131爲模擬振鏡或數字振鏡,所述場鏡132爲定焦鏡頭。具體工作時,當所述第一鐳射束111之波長爲193~355納米,所述振鏡131之掃描速度爲800~1600毫米/秒,當所述第一鐳射束111之波長爲1030~1064納米,所述振鏡131之掃描速度爲400~1400毫米/秒。Please refer to FIG. 2 . In this embodiment, each of the light-emitting
請參見圖2,於本實施例中,所述鐳射蝕刻單元10還包括光束整形器14,所述光束整形器14設置於所述鐳射源11與所述分光器12之間,所述光束整形器14用於篩選出由所述鐳射源11發出之第一鐳射束111中特定之頻率及特定之偏正狀態,從而使得所述第一鐳射束111更爲均勻。具體地,所述光束整形器14包括設有刻線之反射鏡,由所述光束整形器14射出之第一鐳射束111之光斑之強度呈高斯分布。Please refer to FIG. 2 . In this embodiment, the
請參見圖2,於本實施例中,所述鐳射蝕刻單元10還包括光遮罩組件15,所述光遮罩組件15設置於分光器12與所述振鏡131之間。所述光遮罩組件15包括第二驅動件151及傳動連接所述第二驅動件151之遮光板152。所述遮光板152貫穿設有通光孔153。所述第二驅動件151可帶動所述遮光板152移動,使得所述第二鐳射束112穿過所述通光孔153,或者使得所述第二鐳射束112被所述遮光板152遮擋,藉由設置所述光遮罩組件15,使得多個所述第二鐳射束112中之至少部分可以被遮蔽,從而提高了鐳射刻槽之靈活性。具體地,當僅需要部分所述第二鐳射束112加工所述絕緣基板200一側面時,可以藉由移動所述遮光板152使得所述絕緣基板200之另一側面之另一部分之所述第二鐳射束112被遮蔽。Please refer to FIG. 2. In this embodiment, the
請參見圖2與圖4,於本實施例中,所述鐳射蝕刻單元10還包括多個能量監控模塊16,每一所述能量監控模塊16連接所述分光器12,所述能量監控模塊16用於檢測每一所述第二鐳射束112之能量值,並依據多個所述能量值之間之差异産生控制指令,所述分光器12可依據所述控制指令平均分配所述第一鐳射束111之能量密度,使得每一所述第二鐳射束112之能量密度相同,進而使得每一所述加工鐳射束113之能量密度相同,從而有利於蝕刻形成尺寸相同之所述凹槽202。Please refer to Figures 2 and 4. In this embodiment, the
請參見圖2與圖4,於本實施例中,所述能量監控模塊16包括反射鏡161、聚焦透鏡162、感測件163、以及控制器164。所述反射鏡161用於反射由所述分光器12射出之第二鐳射束112(即,對所述第二鐳射束112進行取樣),然後被反射之所述第二鐳射束112進入所述聚焦透鏡162,所述聚焦透鏡162將所述第二鐳射束112彙聚於所述感測件163(即,對所述第二鐳射束112進行測量),所述感測件163測量得到能量值並將該能量值傳送給所述控制器164,所述控制器164依據所述能量值形成所述控制指令。Please refer to FIG. 2 and FIG. 4 . In this embodiment, the
請參見圖3,於本實施例中,所述電鍍槽21大致呈長方體狀,所述電鍍槽21包括底板211及多個側板212。多個所述側板212設於所述底板211之周緣以形成容置空間213,所述容置空間213可以用於容置所述電鍍液22、所述電鍍夾具23、以及設有凹槽202之所述絕緣基板200。其中,所述電鍍液22包括硫酸銅溶液。Please refer to FIG. 3 . In this embodiment, the
請參見圖3,於本實施例中,所述電鍍夾具23包括第一夾持部231、與所述第一夾持部231間隔設置之第二夾持部232,所述絕緣基板200被夾持於所述第一夾持部231與所述第二夾持部232之間,且所述第一夾持部231與所述第二夾持部232電性連接所述電鍍基底層203。Please refer to Figure 3. In this embodiment, the
請參見圖3,於本實施例中,所述電源24藉由導線(未標示)電性連接所述第一夾持部231與所述第二夾持部232,所述電源24用於向所述第一夾持部231及所述第二夾持部232輸送直流電。Please refer to FIG. 3 . In this embodiment, the
以上說明僅僅是對本申請一種優化之具體實施方式,但於實際之應用過程中不能僅僅局限於該種實施方式。對本領域之普通技術人員來說,根據本申請之技術構思做出之其他變形與改變,均應該屬於本申請之保護範圍。The above description is only an optimized specific implementation of this application, but it cannot be limited to this implementation in the actual application process. For ordinary technical personnel in this field, other variations and changes made based on the technical concept of this application should all fall within the scope of protection of this application.
100:線路加工系統 200:絕緣基板 201:電鍍線路 202:凹槽 203:電鍍基底層 204:金屬顆粒 10:鐳射蝕刻單元 11:鐳射源 111:第一鐳射束 112:第二鐳射束 113:加工鐳射束 12:分光器 121:分光片 122:第一驅動件 20:電鍍單元 21:電鍍槽 211:底板 212:側板 213:容置空間 22:電鍍液 23:電鍍夾具 231:第一夾持部 232:第二夾持部 24:電源 13:出光組件 131:振鏡 132:場鏡 14:光束整形器 15:光遮罩組件 151:第二驅動件 152:遮光板 153:通光孔 16:能量監控模塊 161:反射鏡 162:聚焦透鏡 163:感測件 164:控制器 100: Circuit processing system 200: Insulating substrate 201: Electroplating circuit 202: Groove 203: Electroplating base layer 204: Metal particles 10: Laser etching unit 11: Laser source 111: First laser beam 112: Second laser beam 113: Processing laser beam 12: Spectrometer 121: Spectrometer 122: First driver 20: Electroplating unit 21: Electroplating tank 211: Bottom plate 212: Side plate 213: Accommodating space 22: Electroplating liquid 23: Electroplating fixture 231: First clamping part 232: Second clamping part 24: Power supply 13: Light output assembly 131: Vibrating mirror 132: Field lens 14: Beam shaper 15: Light shield assembly 151: Second driver 152: Shading plate 153: Light aperture 16: Energy monitoring module 161: Reflector 162: Focusing lens 163: Sensor 164: Controller
圖1爲本申請一實施例提供之線路加工系統之線框圖。FIG. 1 is a wireframe diagram of a circuit processing system provided in an embodiment of the present application.
圖2爲圖1所示之線路加工系統之鐳射蝕刻單元之示意圖。FIG. 2 is a schematic diagram of a laser etching unit of the circuit processing system shown in FIG. 1 .
圖3爲圖1所示之線路加工系統之電鍍單元之截面示意圖。FIG3 is a schematic cross-sectional view of the electroplating unit of the circuit processing system shown in FIG1.
圖4爲圖1所示之能量監控模塊與分光器之連接示意圖。FIG. 4 is a schematic diagram showing the connection between the energy monitoring module and the optical splitter shown in FIG. 1 .
圖5爲由圖1所示之線路加工系統加工絕緣基板後之截面示意圖。FIG. 5 is a schematic cross-sectional view of an insulating substrate after being processed by the circuit processing system shown in FIG. 1 .
200:絕緣基板 200: Insulation substrate
202:凹槽 202: Groove
10:鐳射蝕刻單元 10: Laser etching unit
11:鐳射源 11: Laser source
111:第一鐳射束 111: The first ray beam
112:第二鐳射束 112: Second laser beam
113:加工鐳射束 113: Processing laser beam
12:分光器 12:Spectrometer
121:分光片 121: Spectrometer
122:第一驅動件 122: First drive member
13:出光組件 13: Light emitting components
131:振鏡 131: Vibration mirror
132:場鏡 132: Scene
14:光束整形器 14: Beam shaper
15:光遮罩組件 15: Light mask assembly
151:第二驅動件 151: Second drive element
152:遮光板 152: Sunshade
153:通光孔 153: Light hole
16:能量監控模塊 16: Energy monitoring module
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CN202211470307.9 | 2022-11-23 | ||
CN202211470307.9A CN118106620A (en) | 2022-11-23 | 2022-11-23 | Circuit processing system |
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TW202421317A true TW202421317A (en) | 2024-06-01 |
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TW111145339A TW202421317A (en) | 2022-11-23 | 2022-11-26 | Circuit processing system |
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TW (1) | TW202421317A (en) |
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- 2022-11-23 CN CN202211470307.9A patent/CN118106620A/en active Pending
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