TW202419684A - 金屬膜上的表面氧化物之選擇性移除的方法 - Google Patents

金屬膜上的表面氧化物之選擇性移除的方法 Download PDF

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Publication number
TW202419684A
TW202419684A TW112121789A TW112121789A TW202419684A TW 202419684 A TW202419684 A TW 202419684A TW 112121789 A TW112121789 A TW 112121789A TW 112121789 A TW112121789 A TW 112121789A TW 202419684 A TW202419684 A TW 202419684A
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TW
Taiwan
Prior art keywords
substrate
ligand
native oxide
metal
metal film
Prior art date
Application number
TW112121789A
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English (en)
Chinese (zh)
Inventor
奥米德 詹迪
保羅 阿貝爾
曼吉斯提 德巴蘇
Original Assignee
日商東京威力科創股份有限公司
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Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202419684A publication Critical patent/TW202419684A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
TW112121789A 2022-06-13 2023-06-12 金屬膜上的表面氧化物之選擇性移除的方法 TW202419684A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/838,440 US12237166B2 (en) 2022-06-13 2022-06-13 Methods for selective removal of surface oxides on metal films
US17/838,440 2022-06-13

Publications (1)

Publication Number Publication Date
TW202419684A true TW202419684A (zh) 2024-05-16

Family

ID=89076688

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112121789A TW202419684A (zh) 2022-06-13 2023-06-12 金屬膜上的表面氧化物之選擇性移除的方法

Country Status (5)

Country Link
US (1) US12237166B2 (https=)
JP (1) JP2025522381A (https=)
KR (1) KR20250022009A (https=)
TW (1) TW202419684A (https=)
WO (1) WO2023244290A1 (https=)

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5030319A (en) 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
US8092707B2 (en) * 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US6706334B1 (en) 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US6730605B2 (en) * 2001-04-12 2004-05-04 Tokyo Electron Limited Redistribution of copper deposited films
US20050191858A1 (en) 2004-02-27 2005-09-01 Akira Fukunaga Substrate processing method and apparatus
US8771804B2 (en) 2005-08-31 2014-07-08 Lam Research Corporation Processes and systems for engineering a copper surface for selective metal deposition
US8318407B2 (en) * 2006-11-01 2012-11-27 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Solution processed thin films and laminates, devices comprising such thin films and laminates, and method for their use and manufacture
KR20110137400A (ko) * 2006-11-01 2011-12-22 더 스테이트 오브 오레곤 액팅 바이 앤드 쓰루 더 스테이트 보드 오브 하이어 에쥬케이션 온 비해프 오브 오레곤 스테이트 유니버시티 용액 처리된 박막들 및 적층체들, 상기 박막들 및 적층체들을 포함하는 장치들, 및 그들의 사용 방법 및 제조 방법
WO2009058278A1 (en) 2007-10-29 2009-05-07 Ekc Technology, Inc Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
WO2010013492A1 (ja) * 2008-07-31 2010-02-04 パナソニック株式会社 重合体、半導体膜、電極、電極活物質、電気化学素子および蓄電デバイス
US20100105595A1 (en) 2008-10-29 2010-04-29 Wai Mun Lee Composition comprising chelating agents containing amidoxime compounds
US8128755B2 (en) 2010-03-03 2012-03-06 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Cleaning solvent and cleaning method for metallic compound
US9017468B2 (en) * 2012-04-25 2015-04-28 Hewlett-Packard Development Company, L.P. Colorant dispersion for an ink
JP5577515B2 (ja) * 2012-09-25 2014-08-27 ステイト オブ オレゴン アクティング バイ アンド スルー ザ ステイト ボード オブ ハイヤー エデュケーション オン ビハーフ オブ オレゴン ステイト ユニバーシティー 溶液処理薄膜および積層体、薄膜および積層体を備えた装置、その使用および製造方法
US20140199497A1 (en) 2013-01-14 2014-07-17 Tighe A. Spurlin Methods for reducing metal oxide surfaces to modified metal surfaces
US9287095B2 (en) * 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9309598B2 (en) * 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
EP3601514A4 (en) 2017-03-24 2020-04-08 Fujifilm Electronic Materials USA, Inc. CLEANING COMPOSITIONS FOR REMOVING RESIDUES ON SEMICONDUCTOR SUBSTRATES
US20190385828A1 (en) 2018-06-19 2019-12-19 Lam Research Corporation Temperature control systems and methods for removing metal oxide films
US10982335B2 (en) * 2018-11-15 2021-04-20 Tokyo Electron Limited Wet atomic layer etching using self-limiting and solubility-limited reactions
WO2020251800A1 (en) 2019-06-13 2020-12-17 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions

Also Published As

Publication number Publication date
US12237166B2 (en) 2025-02-25
WO2023244290A1 (en) 2023-12-21
JP2025522381A (ja) 2025-07-15
KR20250022009A (ko) 2025-02-14
US20230402276A1 (en) 2023-12-14

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