TW202418606A - Sensor package structure - Google Patents
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- TW202418606A TW202418606A TW112110804A TW112110804A TW202418606A TW 202418606 A TW202418606 A TW 202418606A TW 112110804 A TW112110804 A TW 112110804A TW 112110804 A TW112110804 A TW 112110804A TW 202418606 A TW202418606 A TW 202418606A
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- 239000012790 adhesive layer Substances 0.000 claims abstract description 146
- 239000010410 layer Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000004806 packaging method and process Methods 0.000 claims description 36
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 230000003139 buffering effect Effects 0.000 abstract 2
- 239000002184 metal Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Computer Hardware Design (AREA)
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Abstract
Description
本發明涉及一種封裝結構,尤其涉及一種感測器封裝結構。The present invention relates to a packaging structure, and in particular to a sensor packaging structure.
現有的感測器封裝結構包含有一透光片、一感測晶片、及黏著於所述玻璃片與所述感測晶片之間的一黏著層。然而,基於所述黏著層常為較大熱膨脹係數(Coefficient of Thermal Expansion,CTE),以使現有感測器封裝結構受熱時,所述黏著層與其他構件之間會產生應力,進而造成分離(delamination)問題或構件損壞。The existing sensor package structure includes a transparent sheet, a sensor chip, and an adhesive layer adhered between the glass sheet and the sensor chip. However, since the adhesive layer usually has a relatively large coefficient of thermal expansion (CTE), when the existing sensor package structure is heated, stress will be generated between the adhesive layer and other components, thereby causing delamination problems or component damage.
於是,本發明人認為上述缺陷可改善,乃特潛心研究並配合科學原理的運用,終於提出一種設計合理且有效改善上述缺陷的本發明。Therefore, the inventors of the present invention believe that the above defects can be improved, and have conducted intensive research and applied scientific principles to finally propose the present invention which has a reasonable design and effectively improves the above defects.
本發明實施例在於提供一種感測器封裝結構,其能有效地改善現有感測器封裝結構所可能產生的缺陷。The present invention provides a sensor packaging structure that can effectively improve the defects that may occur in the existing sensor packaging structure.
本發明實施例公開一種感測器封裝結構,其包括:一基板;一感測晶片,沿一預設方向設置於所述基板上,並且所述感測晶片電性耦接於所述基板;其中,所述感測晶片的一頂面包含有一感測區域及圍繞於所述感測區域的一承載區域;一黏著層,呈環形且設置於所述感測晶片的所述承載區域上,所述黏著層具有分別位於相反兩側的一內側緣與一外側緣,並且所述內側緣與所述外側緣於垂直所述預設方向的一寬度方向上相隔有一預設寬度;其中,所述黏著層形成有L個緩衝腔、M個波浪槽、及N個矩形槽的至少其中一種,並且L為正整數,而M及N各為大於1的正整數;其中,所述黏著層於垂直所述預設方向的一橫剖面上,所述黏著層於所述寬度方向上的最小寬度不小於所述預設寬度的50%;一透光層,具有分別位於相反兩側的一外表面與一內表面,並且所述透光層設置於所述黏著層,以使所述透光層、所述黏著層的所述內側緣、及所述感測晶片共同包圍形成有一封閉空間;以及一封裝體,形成於所述基板上,並且所述感測晶片、所述黏著層、及所述透光層埋置於所述封裝體內,而所述透光層的至少部分所述外表面裸露於所述封裝體之外;其中,當所述黏著層形成有L個所述緩衝腔時,任一個所述緩衝腔位於所述黏著層之內、並沿所述預設方向貫穿所述黏著層;其中,當所述黏著層形成有M個所述波浪槽時,M個所述波浪槽分別凹設於所述內側緣與所述外側緣、並沿所述預設方向貫穿所述黏著層,彼此相鄰但分別位於所述內側緣與所述外側緣的任兩個所述波浪槽沿所述寬度方向僅部分重疊配置;其中,當所述黏著層形成有N個所述矩形槽時,N個所述矩形槽分別凹設於所述內側緣與所述外側緣、並沿所述預設方向貫穿所述黏著層,彼此相鄰但分別位於所述內側緣與所述外側緣的任兩個所述矩形槽沿所述寬度方向未重疊配置。The present invention discloses a sensor package structure, which includes: a substrate; a sensing chip, which is arranged on the substrate along a preset direction and is electrically coupled to the substrate; wherein a top surface of the sensing chip contains a sensing area and a supporting area surrounding the sensing area; an adhesive layer, which is annular and arranged on the supporting area of the sensing chip, wherein the adhesive layer has an inner edge and an outer edge located on opposite sides, respectively, and the inner edge and the outer edge have a width perpendicular to the preset direction. The adhesive layer is provided with at least one of L buffer cavities, M wave grooves, and N rectangular grooves, and L is a positive integer, and M and N are positive integers greater than 1; wherein, on a cross-section of the adhesive layer perpendicular to the preset direction, the minimum width of the adhesive layer in the width direction is not less than 50% of the preset width; a light-transmitting layer having an outer surface and an inner surface located at opposite sides, and the light-transmitting layer is disposed on the adhesive layer so that the light-transmitting layer and the adhesive layer The inner edge of the substrate and the sensing chip together surround a closed space; and a package body is formed on the substrate, and the sensing chip, the adhesive layer, and the light-transmitting layer are buried in the package body, and at least a portion of the outer surface of the light-transmitting layer is exposed outside the package body; wherein, when the adhesive layer is formed with L buffer cavities, any one of the buffer cavities is located in the adhesive layer and penetrates the adhesive layer along the preset direction; wherein, when the adhesive layer is formed with M wave grooves, the M wave grooves are The wave grooves are respectively recessed at the inner edge and the outer edge and penetrate the adhesive layer along the preset direction, and any two of the wave grooves that are adjacent to each other but respectively located at the inner edge and the outer edge are only partially overlapped along the width direction; wherein, when the adhesive layer is formed with N rectangular grooves, the N rectangular grooves are respectively recessed at the inner edge and the outer edge and penetrate the adhesive layer along the preset direction, and any two of the rectangular grooves that are adjacent to each other but respectively located at the inner edge and the outer edge are not overlapped along the width direction.
本發明實施例也公開一種感測器封裝結構,其包括:一基板;一感測晶片,沿一預設方向設置於所述基板上,並且所述感測晶片電性耦接於所述基板;其中,所述感測晶片的一頂面包含有一感測區域及圍繞於所述感測區域的一承載區域;一黏著層,呈環形且設置於所述感測晶片的所述承載區域上,所述黏著層具有分別位於相反兩側的一內側緣與一外側緣,並且所述內側緣與所述外側緣於垂直所述預設方向的一寬度方向上相隔有一預設寬度;其中,所述黏著層形成有多個波浪槽,多個所述波浪槽分別凹設於所述內側緣與所述外側緣、並沿所述預設方向貫穿所述黏著層,彼此相鄰但分別位於所述內側緣與所述外側緣的任兩個所述波浪槽沿所述寬度方向僅部分重疊配置;其中,所述黏著層於垂直所述預設方向的一橫剖面上,所述黏著層於所述寬度方向上的最小寬度不小於所述預設寬度的50%;一透光層,具有分別位於相反兩側的一外表面與一內表面,並且所述透光層設置於所述黏著層,以使所述透光層、所述黏著層的所述內側緣、及所述感測晶片共同包圍形成有一封閉空間;以及一封裝體,形成於所述基板上,並且所述感測晶片、所述黏著層、及所述透光層埋置於所述封裝體內,而所述透光層的至少部分所述外表面裸露於所述封裝體之外。The present invention also discloses a sensor package structure, which includes: a substrate; a sensing chip, which is arranged on the substrate along a preset direction and electrically coupled to the substrate; wherein a top surface of the sensing chip contains a sensing area and a carrier area surrounding the sensing area; an adhesive layer, which is annular and arranged on the carrier of the sensing chip; In the region, the adhesive layer has an inner edge and an outer edge located at opposite sides, and the inner edge and the outer edge are separated by a preset width in a width direction perpendicular to the preset direction; wherein the adhesive layer is formed with a plurality of wave grooves, the plurality of wave grooves are respectively recessed in the inner edge and the outer edge, and penetrate the adhesive layer along the preset direction, and are mutually Any two of the wave grooves adjacent to each other but located at the inner edge and the outer edge are only partially overlapped along the width direction; wherein, in a cross section of the adhesive layer perpendicular to the preset direction, the minimum width of the adhesive layer in the width direction is not less than 50% of the preset width; a light-transmitting layer having an outer surface and an inner surface located at opposite sides, and the The light-transmitting layer is arranged on the adhesive layer so that the light-transmitting layer, the inner edge of the adhesive layer, and the sensing chip together surround a closed space; and a packaging body is formed on the substrate, and the sensing chip, the adhesive layer, and the light-transmitting layer are buried in the packaging body, and at least a portion of the outer surface of the light-transmitting layer is exposed outside the packaging body.
本發明實施例另公開一種感測器封裝結構,其包括:一基板;一感測晶片,沿一預設方向設置於所述基板上,並且所述感測晶片電性耦接於所述基板;其中,所述感測晶片的一頂面包含有一感測區域及圍繞於所述感測區域的一承載區域;一黏著層,呈環形且設置於所述感測晶片的所述承載區域上,所述黏著層具有分別位於相反兩側的一內側緣與一外側緣,並且所述內側緣與所述外側緣於垂直所述預設方向的一寬度方向上相隔有一預設寬度;其中,所述黏著層形成有多個矩形槽,多個所述矩形槽分別凹設於所述內側緣與所述外側緣、並沿所述預設方向貫穿所述黏著層,彼此相鄰但分別位於所述內側緣與所述外側緣的任兩個所述矩形槽沿所述寬度方向未重疊配置;其中,所述黏著層於垂直所述預設方向的一橫剖面上,所述黏著層於所述寬度方向上的最小寬度不小於所述預設寬度的50%;一透光層,具有分別位於相反兩側的一外表面與一內表面,並且所述透光層設置於所述黏著層,以使所述透光層、所述黏著層的所述內側緣、及所述感測晶片共同包圍形成有一封閉空間;以及一封裝體,形成於所述基板上,並且所述感測晶片、所述黏著層、及所述透光層埋置於所述封裝體內,而所述透光層的至少部分所述外表面裸露於所述封裝體之外。The present invention also discloses a sensor package structure, which includes: a substrate; a sensing chip disposed on the substrate along a preset direction and electrically coupled to the substrate; wherein a top surface of the sensing chip contains a sensing area and a supporting area surrounding the sensing area; an adhesive layer in a ring shape and disposed on the supporting area of the sensing chip; The adhesive layer has an inner edge and an outer edge located on opposite sides, and the inner edge and the outer edge are separated by a preset width in a width direction perpendicular to the preset direction; wherein the adhesive layer is formed with a plurality of rectangular grooves, the plurality of rectangular grooves are respectively recessed in the inner edge and the outer edge and penetrate the adhesive layer along the preset direction, and each Any two of the rectangular grooves that are adjacent but located at the inner edge and the outer edge are not overlapped along the width direction; wherein, on a cross-section of the adhesive layer perpendicular to the preset direction, the minimum width of the adhesive layer in the width direction is not less than 50% of the preset width; a light-transmitting layer having an outer surface and an inner surface located at opposite sides, and the light-transmitting layer is arranged on the adhesive layer so that the light-transmitting layer, the inner edge of the adhesive layer, and the sensing chip together surround a closed space; and a packaging body formed on the substrate, and the sensing chip, the adhesive layer, and the light-transmitting layer are buried in the packaging body, and at least part of the outer surface of the light-transmitting layer is exposed outside the packaging body.
綜上所述,本發明實施例所公開的感測器封裝結構,其於受熱時,所述黏著層能通過形成有L個所述緩衝腔、M個所述波浪槽、及N個所述矩形槽的至少其中一種(如:所述黏著層形成多個所述波浪槽或多個所述矩形槽),以有效地降低應力的強度,進而改善分離問題且避免構件(如:所述感測晶片或所述透光層)損壞。In summary, the sensor packaging structure disclosed in the embodiment of the present invention can effectively reduce the intensity of stress by forming at least one of L buffer cavities, M wave grooves, and N rectangular grooves (such as the adhesive layer forms multiple wave grooves or multiple rectangular grooves) when heated, thereby improving the separation problem and avoiding damage to components (such as the sensor chip or the light-transmitting layer).
為能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,但是此等說明與附圖僅用來說明本發明,而非對本發明的保護範圍作任何的限制。To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, such description and drawings are only used to illustrate the present invention and do not limit the protection scope of the present invention.
以下是通過特定的具體實施例來說明本發明所公開有關“感測器封裝結構”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。The following is an explanation of the implementation of the "sensor packaging structure" disclosed in the present invention through specific concrete embodiments. Those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without deviating from the concept of the present invention. In addition, the drawings of the present invention are only for simple schematic illustrations and are not depicted according to actual sizes. Please note in advance. The following implementation will further explain the relevant technical contents of the present invention in detail, but the disclosed contents are not intended to limit the scope of protection of the present invention.
應當可以理解的是,雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號,但這些元件或者信號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件,或者一信號與另一信號。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。It should be understood that, although the terms "first", "second", "third", etc. may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" used in this document may include any one or more combinations of the related listed items depending on the actual situation.
請參閱圖1至圖11所示,其為本發明的一實施例。本實施例公開一種感測器封裝結構100;也就是說,內部非為封裝感測器的任何結構,其結構設計基礎不同於本實施例所指的感測器封裝結構100,所以兩者之間並不適於進行對比。Please refer to Figures 1 to 11, which are an embodiment of the present invention. This embodiment discloses a
如圖1至圖4所示,所述感測器封裝結構100包含有一基板1、設置於所述基板1上的一感測晶片2、電性耦接所述感測晶片2與所述基板1的多條金屬線3、呈環形且設置於所述感測晶片2上的一黏著層4、設置於所述黏著層4上的一透光層5、及形成於所述基板1上的一封裝體6。As shown in Figures 1 to 4, the
其中,所述感測器封裝結構100於本實施例中雖是以包含上述元件來做說明,但所述感測器封裝結構100也可以依據設計需求而加以調整變化。舉例來說,在本發明未繪示的其他實施例中,所述感測器封裝結構100可以省略多個所述金屬線3,並且所述感測晶片2通過覆晶或黏晶方式固定且電性耦接於所述基板1上。以下將分別就本實施例中的所述感測器封裝結構100的各個元件構造與連接關係作一說明。Among them, although the
所述基板1於本實施例中為呈正方形或矩形,但本發明不受限於此。其中,所述基板1於其上表面11的大致中央處設有一晶片固定區111,並且所述基板1於所述上表面11形成有位於所述晶片固定區111外側的多個接合墊112。多個所述接合墊112於本實施例中是大致排列成環狀,但本發明不限於此。舉例來說,在本發明未繪示的其他實施例中,多個所述接合墊112也可以是在所述晶片固定區111的相反兩側分別排成兩列。The
此外,所述基板1也可以於其下表面12設有多個焊接球7,並且所述感測器封裝結構100能通過多個所述焊接球7而焊接固定於一電子構件(圖中未示出)上,據以使所述感測器封裝結構100能夠通過多個所述焊接球7而電性連接於所述電子構件。In addition, the
所述感測晶片2於本實施例中呈方形(如:長方形或正方形)且以一影像感測晶片來說明,但不以此為限。其中,所述感測晶片2(的底面22)是沿一預設方向D(並通過固晶膠而)固定於所述基板1的所述晶片固定區111;也就是說,所述感測晶片2是位於多個所述接合墊112的內側。再者,所述感測晶片2的一頂面21包含有一感測區域211及圍繞於所述感測區域211(且呈環形)的一承載區域212,並且每條所述金屬線3的兩端分別連接於所述基板1與所述感測晶片2的所述承載區域212,以使所述基板1與所述感測晶片2彼此電性耦接。The
更詳細地說,所述感測晶片2包含有位於所述承載區域212的多個連接墊213(也就是,多個所述連接墊213位於所述感測區域211的外側)。其中,所述感測晶片2的多個所述連接墊213的數量及位置於本實施例中是分別對應於所述基板1的多個所述接合墊112的數量及位置;也就是說,多個所述連接墊213於本實施例中也是大致排列成環狀。再者,每條所述金屬線3的所述兩端分別連接於一個所述接合墊112及相對應的所述連接墊213。In more detail, the
所述黏著層4於本實施例中包含有依序相連而呈環形(如:矩形環)的多個區段4a,並且所述黏著層4設置於所述感測晶片2的所述承載區域212上並圍繞於所述感測區域211的外側,而每條所述金屬線3則是位於所述黏著層4的外側。再者,所述黏著層4具有分別位於相反兩側的一內側緣41與一外側緣42,並且所述內側緣41與所述外側緣42於垂直所述預設方向D的一寬度方向W1、W2上相隔有一預設寬度W4。於本實施例中,所述寬度方向W1、W2包含有垂直於任一個所述區段4a的方向。In this embodiment, the
進一步地說,基於所述黏著層4具有較大的熱膨脹係數(如:所述黏著層4的熱膨脹係數大致為所述透光層5或所述感測晶片2的熱膨脹係數的至少三倍),所以所述感測器封裝結構100依據不同的設計需求,於所述黏著層4(選擇性地)形成有L個緩衝腔43、M個波浪槽44、及N個矩形槽45的至少其中一種(L為正整數,而M及N各為大於1的正整數),據以有效地降低應力的強度。Furthermore, since the
進一步地說,當所述黏著層4形成有L個所述緩衝腔43時(如:圖1~圖7、圖9、及圖11),任一個所述緩衝腔43位於所述黏著層4之內、並沿所述預設方向D貫穿所述黏著層4。也就是說,L個所述緩衝腔43能夠通過上述方式形成於所述黏著層4內而被提供。Specifically, when the
再者,當所述黏著層4形成有M個所述波浪槽44時(如:圖1~圖4、圖8、及圖9),M個所述波浪槽44分別凹設於所述內側緣41與所述外側緣42、並沿所述預設方向D貫穿所述黏著層4,彼此相鄰但分別位於所述內側緣41與所述外側緣42的任兩個所述波浪槽44沿所述寬度方向W1、W2僅部分重疊配置。也就是說,M個所述波浪槽44能夠通過上述方式形成於所述內側緣41與所述外側緣42而被提供。Furthermore, when the
另外,當所述黏著層4形成有N個所述矩形槽45時(如:圖1~圖4、圖10、及圖11),N個所述矩形槽45分別凹設於所述內側緣41與所述外側緣42、並沿所述預設方向D貫穿所述黏著層4,彼此相鄰但分別位於所述內側緣41與所述外側緣42的任兩個所述矩形槽45沿所述寬度方向W1、W2未重疊配置。N個所述矩形槽45能夠通過上述方式形成於所述內側緣41與所述外側緣42而被提供。In addition, when the
需說明的是,為避免所述黏著層4的結構強度不足,所述緩衝腔43、所述波浪槽44、及/或所述矩形槽45於所述黏著層4的配置於本實施例中須要符合下述條件:所述黏著層4於垂直所述預設方向D的一橫剖面上,所述黏著層4於所述寬度方向W1、W2上的最小寬度Wmin不小於所述預設寬度W4的50%。進一步地說,所述最小寬度Wmin的位置是對應於(或標註於)所述緩衝腔43、所述波浪槽44、及/或所述矩形槽45在所述寬度方向W1、W2上佔據最高比例的所述黏著層4部位。It should be noted that, in order to avoid insufficient structural strength of the
所述透光層5於本實施例中是以一平板玻璃來說明,但本發明不受限於此。其中,所述透光層5具有分別位於相反兩側的一外表面51與一內表面52,並且所述透光層5(以所述內表面52)設置於所述黏著層4上,以使所述透光層5、所述黏著層4的所述內側緣41、及所述感測晶片2共同包圍形成有一封閉空間E,而所述黏著層4的所述內側緣41及所述感測晶片2的所述感測區域211皆是位於所述封閉空間E之內。The light-transmitting
所述封裝體6於本實施例中為不透光狀,用以阻擋可見光穿過。所述封裝體6是以一液態封膠(Liquid encapsulation)來說明,並且所述封裝體6形成於所述基板1的所述上表面11且其邊緣切齊於所述基板1的邊緣。其中,每條所述金屬線3、所述感測晶片2、所述黏著層4、及所述透光層5皆埋置於所述封裝體6內(如:所述黏著層4的所述外側緣42相連於所述封裝體6),並且所述透光層5的至少部分所述外表面51裸露於所述封裝體6之外,但本發明不受限於此。The
依上所述,本實施例所公開的所述感測器封裝結構100於受熱時,所述黏著層4能通過形成有L個所述緩衝腔43、M個所述波浪槽44、及N個所述矩形槽45的至少其中一種,以有效地降低應力的強度,進而改善分離問題且避免構件(如:所述感測晶片2或所述透光層5)損壞。As described above, when the
需額外說明的是,以上內容是以所述黏著層4可能存在的各種構型的共通特徵來說明;舉例來說:如本實施例圖1~圖4所呈現的所述黏著層4第一構型所示,當所述黏著層4形成有M個所述波浪槽44與N個所述矩形槽45時,M個所述波浪槽44形成於其中一個所述區段4a,而N個所述矩形槽45形成於其中另一個所述區段4a。再者,當所述黏著層4更進一步形成有L個所述緩衝腔43時,L個所述緩衝腔43沿所述寬度方向未與任何所述波浪槽44及任何所述矩形槽45排列。It should be noted that the above content is explained based on the common features of various possible configurations of the
進一步地說,所述黏著層4所形成的所述緩衝腔43、所述波浪槽44、及所述矩形槽45的數量與配置可依據設計需求而加以調整變化,因而難以將所述黏著層4的全部構型呈現於本實施例圖式之中,所以下僅列舉部分較佳的構型來說明,但本發明不受限於此。此外,所述黏著層4於下述多個構型皆是以L大於1的情況來說明,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,L可以是等於1。Furthermore, the number and arrangement of the
[第二構型][Second Configuration]
如圖5所示,所述黏著層4(僅)形成有多個所述緩衝腔43,多個所述緩衝腔43可以是分別形成於多個所述區段4a,並且(位於相同所述區段4a且)相鄰的任兩個所述緩衝腔43沿所述寬度方向W1、W2未重疊配置,而任一個所述緩衝腔43相較於所述感測區域211的中心較佳是與另一個所述緩衝腔43呈對稱狀配置,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述黏著層4可以僅以其中一個所述區段4a形成有多個所述緩衝腔43。As shown in FIG5 , the adhesive layer 4 (only) forms a plurality of the
此外,於所述橫剖面上,每個所述緩衝腔43呈長形(如:橢圓形),多個所述緩衝腔43的總面積不大於所述內側緣41與所述外側緣42所共同包圍的面積的50%,據以有效地避免多個所述緩衝腔43造成所述黏著層4的結構強度不足。In addition, in the cross section, each of the
[第三構型][Third Configuration]
如圖6所示,所述黏著層4(僅)形成有多個所述緩衝腔43,多個所述緩衝腔43可以是分別形成於多個所述區段4a,並且(位於相同所述區段4a的)任一個所述緩衝腔43沿所述寬度方向W1、W2重疊配置於另一個所述緩衝腔43,而任一個所述緩衝腔43相較於所述感測區域211的中心較佳是與另一個所述緩衝腔43呈對稱狀配置,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述黏著層4可以僅以其中一個所述區段4a形成有多個所述緩衝腔43。As shown in FIG6 , the adhesive layer 4 (only) forms a plurality of the
此外,於所述橫剖面上,每個所述緩衝腔43呈圓形,多個所述緩衝腔43的總面積不大於所述內側緣41與所述外側緣42所共同包圍的面積的50%,據以有效地避免多個所述緩衝腔43造成所述黏著層4的結構強度不足。進一步地說,如圖7所示,多個所述緩衝腔43也可以採用同時長形與圓形。In addition, in the cross section, each of the
[第四構型][Fourth Configuration]
如圖8所示,所述黏著層4(僅)形成有多個所述波浪槽44,多個所述波浪槽44可以是分別形成於多個所述區段4a,(於相同所述區段4a、)彼此相鄰但分別位於所述內側緣41與所述外側緣42的任兩個所述波浪槽44沿所述寬度方向W1、W2僅部分重疊配置,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述黏著層4可以僅以其中一個所述區段4a形成有多個所述波浪槽44。As shown in FIG8 , the adhesive layer 4 (only) forms a plurality of the
更詳細地說,於(相同所述區段4a、)彼此相鄰但分別位於所述內側緣41與所述外側緣42的任兩個所述波浪槽44之中,其中一個所述波浪槽44的波峰441較佳是沿所述寬度方向W1、W2對應於其中另一個所述波浪槽44的波谷442,以使得相對應的所述波峰441和所述波谷442之間能形成有所述最小寬度Wmin,進而有效地避免多個所述波浪槽44造成所述黏著層4的結構強度不足。To be more specific, in any two of the
[第五構型][Fifth Configuration]
如圖9所示,所述黏著層4形成有多個所述波浪槽44與多個所述緩衝腔43,而有關多個所述波浪槽44與多個所述緩衝腔43的構造已於上述說明,在此不加以贅述。以下僅介紹多個所述波浪槽44與多個所述緩衝腔43的配置關係。其中,多個所述波浪槽44是分別形成於其中兩個所述區段4a,並且多個所述緩衝腔43的部分(如:至少一個所述緩衝腔43)是位於多個所述波浪槽44之間,而多個所述緩衝腔43的其他部分則是位於未形成有多個所述波浪槽44的其中另兩個所述區段4a。As shown in FIG9 , the
[第六構型][Sixth Configuration]
如圖10所示,所述黏著層4(僅)形成有多個所述矩形槽45,多個所述矩形槽45可以是分別形成於多個所述區段4a,(於相同所述區段4a、)彼此相鄰但分別位於所述內側緣41與所述外側緣42的任兩個所述矩形槽45沿所述寬度方向W1、W2未重疊配置,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述黏著層4可以僅以其中一個所述區段4a形成有多個所述矩形槽45。As shown in FIG. 10 , the adhesive layer 4 (only) forms a plurality of
更詳細地說,任一個所述矩形槽45具有位於所述內側緣41或所述外側緣42的一槽口451,並且任一個所述矩形槽45還具有遠離所述槽口451的一槽底452。其中,位於相同所述區段4a但分別位於所述內側緣41與所述外側緣42的任兩個所述矩形槽45,其所述槽底452較佳是呈共平面配置,但本發明不以此為限。In more detail, any of the
換個角度來看,所述槽口451具有一槽寬W451,並且(於相同所述區段4a、)彼此相鄰但分別位於所述內側緣41與所述外側緣42的任兩個所述矩形槽45,其之間相隔有不小於所述槽寬W451的一距離D1。再者,(於相同所述區段4a、)彼此相鄰且皆位於所述內側緣41或所述外側緣42的任兩個所述矩形槽45,其之間相隔有至少三倍所述槽寬W451的一距離D2,但本發明不以此為限。From another perspective, the
[第七構型][Seventh Configuration]
如圖11所示,所述黏著層4形成有多個所述矩形槽45與多個所述緩衝腔43,而有關多個所述矩形槽45與多個所述緩衝腔43的構造已於上述說明,在此不加以贅述。以下僅介紹多個所述矩形槽45與多個所述緩衝腔43的配置關係。其中,多個所述矩形槽45是分別形成於其中兩個所述區段4a,並且多個所述緩衝腔43則是位於未形成有多個所述波浪槽44的其中另兩個所述區段4a。As shown in FIG. 11 , the
[本發明實施例的技術效果][Technical Effects of the Embodiments of the Invention]
綜上所述,本發明實施例所公開的感測器封裝結構,其於受熱時,所述黏著層能通過形成有L個所述緩衝腔、M個所述波浪槽、及N個所述矩形槽的至少其中一種(如:所述黏著層形成多個所述波浪槽或多個所述矩形槽),以有效地降低應力的強度,進而改善分離問題且避免構件(如:所述感測晶片或所述透光層)損壞。In summary, the sensor packaging structure disclosed in the embodiment of the present invention can effectively reduce the intensity of stress by forming at least one of L buffer cavities, M wave grooves, and N rectangular grooves (such as the adhesive layer forms multiple wave grooves or multiple rectangular grooves) when heated, thereby improving the separation problem and avoiding damage to components (such as the sensor chip or the light-transmitting layer).
再者,於本發明實施例所公開的感測器封裝結構之中,所述黏著層在符合特定結構條件之下(如:所述最小寬度不小於所述預設寬度的50%),所述黏著層所形成的所述緩衝腔、所述波浪槽、及所述矩形槽的數量與配置能夠調整變化,據以符合不同的設計需求。Furthermore, in the sensor packaging structure disclosed in the embodiment of the present invention, the adhesive layer can be adjusted and varied in quantity and configuration of the buffer cavity, the wavy groove, and the rectangular groove formed by the adhesive layer under certain structural conditions (such as the minimum width is not less than 50% of the preset width) to meet different design requirements.
以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的專利範圍內。The above disclosed contents are only preferred feasible embodiments of the present invention and are not intended to limit the patent scope of the present invention. Therefore, all equivalent technical changes made by using the contents of the specification and drawings of the present invention are included in the patent scope of the present invention.
100:感測器封裝結構
1:基板
11:上表面
111:晶片固定區
112:接合墊
12:下表面
2:感測晶片
21:頂面
211:感測區域
212:承載區域
213:連接墊
22:底面
3:金屬線
4:黏著層
4a:區段
41:內側緣
42:外側緣
43:緩衝腔
44:波浪槽
441:波峰
442:波谷
45:矩形槽
451:槽口
452:槽底
5:透光層
51:外表面
52:內表面
6:封裝體
7:焊接球
D:預設方向
W1:寬度方向
W2:寬度方向
E:封閉空間
Wmin:最小寬度
W4:預設寬度
W451:槽寬
D1:距離
D2:距離
100: Sensor package structure
1: Substrate
11: Upper surface
111: Chip fixing area
112: Bonding pad
12: Lower surface
2: Sensing chip
21: Top surface
211: Sensing area
212: Carrying area
213: Connecting pad
22: Bottom surface
3: Metal wire
4:
圖1為本發明實施例的感測器封裝結構的第一構型的立體示意圖。FIG1 is a three-dimensional schematic diagram of a first configuration of a sensor package structure according to an embodiment of the present invention.
圖2為圖1沿剖線II-II的剖視示意圖。FIG. 2 is a schematic cross-sectional view along section line II-II of FIG. 1 .
圖3為圖1省略透光層與封裝體之後的上視示意圖。FIG. 3 is a top view of FIG. 1 with the light-transmitting layer and the packaging body omitted.
圖4為圖3的區域IV的放大示意圖。FIG. 4 is an enlarged schematic diagram of region IV of FIG. 3 .
圖5為本發明實施例的感測器封裝結構的第二構型於省略透光層與封裝體之後的局部上視示意圖。FIG. 5 is a partial top view of the second configuration of the sensor package structure according to the embodiment of the present invention after omitting the light-transmitting layer and the package body.
圖6為本發明實施例的感測器封裝結構的第三構型於省略透光層與封裝體之後的局部上視示意圖。FIG. 6 is a partial top view of the third configuration of the sensor package structure according to the embodiment of the present invention after omitting the light-transmitting layer and the package body.
圖7為本發明實施例的感測器封裝結構的另一第三構型於省略透光層與封裝體之後的局部上視示意圖。FIG. 7 is a partial top view of another third configuration of the sensor package structure according to the embodiment of the present invention after omitting the light-transmitting layer and the package body.
圖8為本發明實施例的感測器封裝結構的第四構型於省略透光層與封裝體之後的局部上視示意圖。FIG8 is a partial top view of the fourth configuration of the sensor package structure according to the embodiment of the present invention after omitting the light-transmitting layer and the package body.
圖9為本發明實施例的感測器封裝結構的第五構型於省略透光層與封裝體之後的局部上視示意圖。FIG. 9 is a partial top view of the fifth configuration of the sensor package structure according to the embodiment of the present invention after omitting the light-transmitting layer and the package body.
圖10為本發明實施例的感測器封裝結構的第六構型於省略透光層與封裝體之後的局部上視示意圖。FIG. 10 is a partial top view of the sixth configuration of the sensor package structure according to the embodiment of the present invention after omitting the light-transmitting layer and the package body.
圖11為本發明實施例的感測器封裝結構的第七構型於省略透光層與封裝體之後的局部上視示意圖。FIG. 11 is a partial top view of the seventh configuration of the sensor package structure according to the embodiment of the present invention after omitting the light-transmitting layer and the package body.
100:感測器封裝結構 100:Sensor packaging structure
1:基板 1: Substrate
11:上表面 11: Upper surface
112:接合墊 112:Joint pad
12:下表面 12: Lower surface
2:感測晶片 2:Sensor chip
213:連接墊 213:Connection pad
3:金屬線 3:Metal wire
4:黏著層 4: Adhesive layer
4a:區段 4a: Section
43:緩衝腔 43: Buffer chamber
44:波浪槽 44: Wave trough
45:矩形槽 45: Rectangular slot
5:透光層 5: Translucent layer
6:封裝體 6: Package body
D:預設方向 D: Default direction
W1:寬度方向 W1: Width direction
W2:寬度方向 W2: Width direction
Claims (19)
Priority Applications (1)
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US18/206,153 US20240128139A1 (en) | 2022-10-17 | 2023-06-06 | Sensor package structure |
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US202263416721P | 2022-10-17 | 2022-10-17 | |
US63/416,721 | 2022-10-17 |
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TW112110804A TWI845221B (en) | 2022-10-17 | 2023-03-23 | Sensor package structure |
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FR2832252B1 (en) * | 2001-11-14 | 2004-03-12 | St Microelectronics Sa | SEMICONDUCTOR PACKAGE WITH SENSOR PROVIDED WITH A FIXING INSERT |
CN2891286Y (en) * | 2005-12-30 | 2007-04-18 | 华东科技股份有限公司 | Image sensing and encapsulation structure |
US20080191333A1 (en) * | 2007-02-08 | 2008-08-14 | Advanced Chip Engineering Technology Inc. | Image sensor package with die receiving opening and method of the same |
US8269300B2 (en) * | 2008-04-29 | 2012-09-18 | Omnivision Technologies, Inc. | Apparatus and method for using spacer paste to package an image sensor |
US8125042B2 (en) * | 2008-11-13 | 2012-02-28 | Samsung Electronics Co., Ltd. | Semiconductor package and method of manufacturing the same |
US8193555B2 (en) * | 2009-02-11 | 2012-06-05 | Megica Corporation | Image and light sensor chip packages |
TW201104747A (en) * | 2009-07-29 | 2011-02-01 | Kingpak Tech Inc | Image sensor package structure |
KR101640417B1 (en) * | 2010-01-22 | 2016-07-25 | 삼성전자 주식회사 | Semiconductor package and method for manufacturing of the same |
US9252179B2 (en) * | 2014-06-13 | 2016-02-02 | Visera Technologies Company Limited | Image sensor structures |
JP6433335B2 (en) * | 2015-02-26 | 2018-12-05 | 一般財団法人マイクロマシンセンター | Wireless sensor terminal |
EP3267485B1 (en) * | 2016-07-06 | 2020-11-18 | Kingpak Technology Inc. | Sensor package structure |
CN111048534B (en) * | 2018-10-11 | 2022-03-11 | 胜丽国际股份有限公司 | Sensor package structure |
JP2022145017A (en) * | 2021-03-19 | 2022-10-03 | セイコーホールディングス株式会社 | Package for far infrared sensor and manufacturing method thereof, and far infrared sensor and manufacturing method thereof |
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TW202418492A (en) | 2024-05-01 |
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