TW202413575A - 半導體加工用黏著片材 - Google Patents
半導體加工用黏著片材 Download PDFInfo
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- TW202413575A TW202413575A TW112127867A TW112127867A TW202413575A TW 202413575 A TW202413575 A TW 202413575A TW 112127867 A TW112127867 A TW 112127867A TW 112127867 A TW112127867 A TW 112127867A TW 202413575 A TW202413575 A TW 202413575A
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- adhesive sheet
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- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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- C09J2423/00—Presence of polyolefin
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Abstract
本發明之課題在於提供一種耐溶劑性優異之半導體加工用黏著片材。
本發明之實施方式之半導體加工用黏著片材包括：由包含基礎聚合物之黏著劑組合物形成之黏著劑層、及基材。將該黏著劑組合物在23℃下在N,N-二甲基丙醯胺溶液中浸漬1小時之膨潤度S
A為2.1倍以下。
Description
本發明係關於一種半導體加工用黏著片材。
半導體晶圓用於個人電腦、智慧型手機、汽車等各種用途。在半導體晶圓之加工步驟中，在加工時使用黏著帶以保護表面。近年來，大規模積體電路(LSI)之微細化及高功能化不斷進展，並且IC之集成不僅以二維方式進行，而且以三維方式進行。在該等技術中，將晶圓研削得較薄。由於研削得較薄之晶圓較脆，故而在搬送時使用接著劑來進行晶圓之臨時固定(temporary bonding)以保護晶圓。用於臨時固定之接著劑在搬送到下一步驟之後不再需要，因此藉由例如溶劑洗淨而被去除。然而，由於使用溶劑之去除步驟，有用於保護半導體之黏著帶之性能降低，無法充分保護晶圓之情況。在專利文獻1及2中，揭示了一種耐溶劑性優異之半導體加工用黏著帶。然而，該等黏著帶有無法充分地保護研削得更薄型(例如，50 μm左右)之晶圓之虞。
[先前技術文獻]
[專利文獻]
[專利文獻1]WO 2018/083987
[專利文獻2]日本專利第5607847號
[發明所欲解決之問題]
本發明旨在解決上述先前之問題，其目的在於提供一種耐溶劑性優異之半導體加工用黏著片材。
[解決問題之技術手段]
1. 本發明之實施方式之半導體加工用黏著片材包括：由包含基礎聚合物之黏著劑組合物形成之黏著劑層、及基材。將該黏著劑組合物在23℃下在N,N-二甲基丙醯胺溶液中浸漬1小時之膨潤度S
A為2.1倍以下。
2. 在上述1.中所記載之半導體加工用黏著片材中，在構成上述基礎聚合物之所有單體成分中，具有碳數為8以上之烷基之丙烯酸或甲基丙烯酸之酯之含有比率可為50重量%以上。
3. 在上述1.或2.中所記載之半導體加工用黏著片材中，上述基礎聚合物可為導入有碳-碳雙鍵之聚合物。
4. 在上述1.至3.中任一項中所記載之半導體加工用黏著片材中，上述基材可包含聚酯系樹脂或聚烯烴系樹脂。
5. 在上述1.至4.中任一項中所記載之半導體加工用黏著片材中，上述黏著劑組合物可進而包含磷酸酯系界面活性劑。
6. 在上述5.中所記載之半導體加工用黏著片材中，相對於100重量份之上述基礎聚合物，上述磷酸酯系界面活性劑之含量可為0.03重量份以上。
7.上述1.至6.中任一項中所記載之半導體加工用黏著片材可用於包括溶劑洗淨步驟之半導體加工步驟。
[發明之效果]
根據本發明之實施方式，能夠提供一種耐溶劑性優異之半導體加工用黏著片材。本發明之實施方式之半導體加工用黏著片材即使當在貼附於被黏著體(例如，晶圓)之狀態下進行溶劑洗淨之情形時，溶劑亦不會進入至被黏著體與黏著劑層之間，能夠維持良好之接著性。進而，即使在經過溶劑洗淨步驟之後，亦能夠抑制半導體加工用黏著片材之基材與黏著劑層之剝離。
A.半導體加工用黏著片材之整體構成
圖1係本發明之實施方式之半導體加工用黏著片材之概略剖視圖。在圖示例中，半導體加工用黏著片材100包括基材10、及配置在基材之一個面之黏著劑層20。半導體加工用黏著片材可具備任意合適之其他層(未圖示)。例如，可在基材與黏著劑層之間形成任意合適之層(例如，中間層)。在圖示例中，基材10係單一之層，但亦可為兩層以上之積層體。半導體加工用黏著片材可以保護黏著劑層之目的在黏著劑層之外側設置剝離襯墊直至供於使用前。
黏著劑層20由包含基礎聚合物之黏著劑組合物形成。將該黏著劑組合物在23℃下在N,N-二甲基丙醯胺溶液中浸漬1小時之膨潤度S
A為2.1倍以下。若膨潤度S
A為2.1倍以下，則能夠提供耐溶劑性優異之半導體加工用黏著片材。膨潤度S
A較佳為2.0倍以下，更佳為1.9倍以下，進而較佳為1.8倍以下。膨潤度S
A越接近1倍越佳。於說明書中，膨潤度S
A係指藉由以下方法測定之膨潤度。將0.1重量份之黏著劑樣品用平均孔徑為0.2 μm之多孔質聚四氟乙烯膜包裹成拉繩袋(drawstring bag)狀，然後用風箏線系住開口，作為評價樣品。作為多孔質聚四氟乙烯膜，例如，可使用商品名「Nitoflon(註冊商標)NTF1122」(日東電工公司製造，平均孔徑：0.2 μm，孔隙率：75%，厚度：85 μm)。將評價樣品在23℃下在50 mL之N,N-二甲基丙醯胺溶液中浸漬1小時後，從N,N-二甲基丙醯胺溶液中取出評價樣品。繼而，擦掉附著在外表面之N,N-二甲基丙醯胺溶液，測定評價樣品之重量。基於測定之重量由下式計算出膨潤度S
A：
膨潤度S
A(倍)＝(W4－W2－W3)/(W1)
(式中，W1表示0.1重量份之黏著劑組合物之重量，W2表示用於包裹黏著劑組合物之多孔質聚四氟乙烯膜之重量，W3表示風箏線之重量，W4表示浸漬後之評價樣品之重量)
本發明之實施方式之半導體加工用黏著片材之厚度可設定為任意合適之厚度。半導體加工用黏著片材之厚度例如較佳為20 μm～1,000 μm，更佳為50 μm～300 μm，進而較佳為100 μm～300 μm。
B. 基材
基材10可由任意合適之樹脂構成。作為構成基材之樹脂之具體例，可例舉：聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)、聚對苯二甲酸丁二酯(PBT)、聚萘二甲酸丁二酯(PBN)等聚酯系樹脂、乙烯-乙酸乙烯酯共聚物、乙烯-甲基丙烯酸甲酯共聚物、聚乙烯、聚丙烯、乙烯-丙烯共聚物等聚烯烴系樹脂、聚乙烯醇、聚偏二氯乙烯、聚氯乙烯、氯乙烯-乙酸乙烯酯共聚物、聚乙酸乙烯酯、聚醯胺、聚醯亞胺、纖維素類、氟系樹脂、聚醚、聚苯乙烯等聚苯乙烯系樹脂、聚碳酸酯、聚醚碸等。較佳為使用聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)、聚對苯二甲酸丁二酯(PBT)、聚萘二甲酸丁二酯(PBN)等聚酯系樹脂、以及聚乙烯、聚丙烯、乙烯-丙烯共聚物等聚烯烴系樹脂。藉由使用該等樹脂，能夠獲得耐溶劑性優異之半導體加工用黏著片材。基材可為單一之層，亦可為兩層以上之積層體。
基材可在無損本發明之效果之範圍內進而包含其他成分。作為其他成分，例如，可例舉：抗氧化劑、紫外線吸收劑、光穩定劑、耐熱穩定劑等。關於其他成分之種類及使用量，可根據目的以任意合適之量使用。
基材之厚度較佳為10 μm～200 μm，更佳為20 μm～150 μm。
C. 黏著劑層
黏著劑層20由包含基礎聚合物之黏著劑組合物形成。黏著劑組合物在23℃下在N,N-二甲基丙醯胺溶液中浸漬1小時之膨潤度S
A為2.1倍以下。若黏著劑組合物之膨潤度S
A為2.1倍以下，則能夠獲得耐溶劑性優異之半導體加工用黏著片材。使用膨潤度S
A為2.1倍以下之黏著劑組合物形成之黏著劑層即使當在貼附於被黏著體(例如，晶圓)之狀態下進行溶劑洗淨之情形時，溶劑亦不會進入至被黏著體與黏著劑層之間，能夠維持良好之接著性。因此，本發明之實施方式之半導體加工用黏著片材亦能夠良好地用於包括溶劑洗淨步驟之半導體加工步驟。
C-1. 基礎聚合物
基礎聚合物係藉由聚合含有任意合適之單體成分之單體組合物而獲得。作為基礎聚合物，例如，可例舉：(甲基)丙烯酸系樹脂、乙烯基烷基醚系樹脂、聚矽氧系樹脂、聚酯系樹脂、聚醯胺系樹脂、胺基甲酸酯系樹脂、苯乙烯-二烯嵌段共聚物等樹脂。較佳為使用(甲基)丙烯酸系樹脂。藉由使用(甲基)丙烯酸系樹脂，能夠獲得容易調整黏著劑層之儲存彈性模數及拉伸彈性模數，且黏著力與剝離性之平衡優異的黏著片材。進而，能夠減少源自黏著劑之成分對被黏著體之污染。再者，「(甲基)丙烯酸」係指丙烯酸及/或甲基丙烯酸。
關於作為基礎聚合物之(甲基)丙烯酸系樹脂，構成基礎聚合物之所有單體成分中，具有碳數為8以上之烷基之(甲基)丙烯酸之酯之含有比率較佳為50重量%以上，更佳為50重量%～75重量%，進而較佳為60重量%～70重量%。若構成基礎聚合物之所有單體成分中之具有碳數為8以上之烷基之(甲基)丙烯酸之酯之含有比率為上述範圍內，則能夠提供耐溶劑性優異之半導體加工用黏著片材。
碳數為8以上之烷基可為直鏈狀亦可為支鏈狀烷基，亦可為環狀烷基。較佳為具有直鏈狀或支鏈狀烷基。烷基較佳為碳數為8以上之烷基，更佳為碳數為8～30之烷基，進而較佳為碳數為8～20之烷基。作為烷基，具體而言，可例舉：2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、十五烷基、十六烷基、十七烷基、硬脂基、異硬脂基、十八烷基、十九烷基、二十烷基、十二烷基等。
作為具有碳數為8以上之烷基之(甲基)丙烯酸之酯，具體而言，可例舉：(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸硬脂酯、(甲基)丙烯酸異硬脂酯等。該等可僅使用一種，亦可組合兩種以上使用。
單體組合物亦可以凝集力、耐熱性、交聯性等之改質為目的，根據需要包含能夠與具有碳數為8以上之烷基之(甲基)丙烯酸之酯共聚之其他單體。作為此種單體，例如，可例舉：丙烯酸、甲基丙烯酸等含羧基之單體；馬來酸酐、伊康酸酐等酸酐單體；(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基丙酯等含羥基之單體；苯乙烯磺酸、烯丙基磺酸等含磺酸基之單體；(甲基)丙烯醯胺、N,N-二甲基(甲基)丙烯醯胺、丙烯醯嗎啉等含氮單體；(甲基)丙烯酸胺基乙酯等(甲基)丙烯酸胺基烷基酯系單體；(甲基)丙烯酸甲氧基乙酯等(甲基)丙烯酸烷氧基烷基酯系單體；N-環己基馬來醯亞胺、N-異丙基馬來醯亞胺等馬來醯亞胺系單體；N-甲基伊康醯亞胺、N-乙基伊康醯亞胺等伊康醯亞胺系單體；琥珀醯亞胺系單體；乙酸乙烯酯、丙酸乙烯酯、N-乙烯基吡咯啶酮、甲基乙烯基吡咯啶酮等乙烯基系單體；丙烯腈、甲基丙烯腈等氰基丙烯酸酯單體；(甲基)丙烯酸縮水甘油酯等含環氧基之丙烯酸系單體；聚乙二醇(甲基)丙烯酸酯、聚丙二醇(甲基)丙烯酸酯等二醇系丙烯酸酯單體；(甲基)丙烯酸四氫糠酯、氟(甲基)丙烯酸酯、聚矽氧(甲基)丙烯酸酯等具有雜環、鹵素原子、矽原子等之丙烯酸酯系單體；異戊二烯、丁二烯、異丁烯等烯烴系單體；乙烯醚等乙烯醚系單體等。該等單體成分可僅使用一種，亦可組合兩種以上使用。其他單體係以與上述具有碳數為8以上之烷基之(甲基)丙烯酸之酯之合計成為100重量%之含有比率使用。
較佳為在構成基礎聚合物之所有單體成分中，含極性基之單體之含有比率較佳為10重量%以下，更佳為7重量%以下，進而較佳為5重量%以下，特佳為3重量%以下。含極性基之單體並非作為構成基礎聚合物之單體成分而被包含(其含有比率亦可為0重量%)。作為含極性基之單體，例如，可例舉：丙烯酸、甲基丙烯酸等含羧基之單體。
作為基礎聚合物之(甲基)丙烯酸系樹脂之重量平均分子量較佳為30萬以上，更佳為50萬以上，進而較佳為80萬～300萬。若為此種範圍內，則能夠防止低分子量成分之滲出，獲得低污染性之黏著片材。作為基礎聚合物之(甲基)丙烯酸系樹脂之分子量分佈(重量平均分子量/數量平均分子量)較佳為1～20，更佳為3～10。藉由使用分子量分佈狹窄之聚合物，能夠防止低分子量成分之滲出，獲得低污染性之黏著片材。再者，重量平均分子量及數量平均分子量可藉由凝膠滲透層析測定(溶劑：四氫呋喃，聚苯乙烯換算)而求出。
較佳為基礎聚合物係具有碳-碳雙鍵之基礎聚合物。具有碳-碳雙鍵之基礎聚合物可在主鏈具有碳-碳雙鍵，可在側鏈具有碳-碳雙鍵，亦可在末端具有碳-碳雙鍵。
具有碳-碳雙鍵之聚合物可藉由任意合適之方法獲得。例如，可藉由使利用任意合適之聚合方法獲得之樹脂與具有碳-碳雙鍵之化合物進行反應(例如縮合反應、加成反應)而獲得。具體而言，於使用(甲基)丙烯酸系樹脂之情形時，在任意合適之溶劑中聚合具有源自具有任意合適之官能基之單體之結構單元的(甲基)丙烯酸系樹脂(共聚物)，然後使該丙烯酸系樹脂之官能基與具有能夠與該官能基反應之碳-碳雙鍵之化合物進行反應，藉此可獲得上述樹脂。相對於100重量份之上述樹脂，進行反應之具有碳-碳雙鍵之化合物之量較佳為4重量份～30重量份，更佳為4重量份～20重量份。作為溶劑，可使用任意合適之溶劑，例如，可例舉：乙酸乙酯、甲基乙基酮、甲苯等各種有機溶劑。
在如上所述使樹脂與具有碳-碳雙鍵之化合物進行反應之情形時，較佳為樹脂及具有碳-碳雙鍵之化合物各自具有能夠彼此反應之官能基。作為官能基之組合，例如，可例舉：羧基/環氧基、羧基/氮丙啶基、羥基/異氰酸基等。在該等官能基之組合中，就易於追蹤反應而言，較佳為羥基與異氰酸基之組合。如上所述，在本發明之一個實施方式中，構成基礎聚合物之所有單體成分中，含極性基之單體之含有比率較佳為10重量%以下。當基礎聚合物具有碳-碳雙鍵之情形時，較佳為以與具有碳-碳雙鍵之化合物之莫耳比等量之方式使用。
作為具有碳-碳雙鍵之化合物，例如，可例舉：甲基丙烯酸2-異氰酸基乙酯、甲基丙烯醯基異氰酸酯、異氰酸2-甲基丙烯醯氧基乙酯(甲基丙烯酸2-異氰酸基乙酯)、間異丙烯基-α,α-二甲基苄基異氰酸酯等。
C-2. 磷酸酯系界面活性劑
黏著劑組合物較佳為進而包含磷酸酯系界面活性劑。當黏著劑組合物進而包含磷酸酯系界面活性劑之情形時，能夠獲得耐溶劑性進一步提高之半導體加工用黏著片材。作為磷酸酯系界面活性劑，例如，可例舉：聚氧乙烯烷基醚或聚氧乙烯烷基芳基醚之磷酸單酯、聚氧乙烯烷基醚或聚氧乙烯烷基芳基醚之磷酸二酯、聚氧乙烯烷基醚或聚氧乙烯烷基芳基醚之磷酸三酯、烷基磷酸酯、烷基醚磷酸酯及該等之鹽。作為鹽，可例舉：鈉鹽、鉀鹽等。較佳為可使用聚氧乙烯烷基醚磷酸酯及其鹽。磷酸酯系界面活性劑可僅使用一種，亦可組合兩種以上使用。
聚氧乙烯烷基醚磷酸酯係藉由使環氧乙烷與高級醇加成聚合而獲得者之磷酸酯。高級醇之碳數較佳為8～22，更佳為10～20，進而較佳為12～18。環氧乙烷之加成莫耳數較佳為1～15，更佳為2～12，進而較佳為2～10。若為此種聚氧乙烯烷基醚磷酸酯，則能夠提供耐溶劑性優異之半導體加工用黏著片材。
相對於100重量份之上述基礎聚合物，磷酸酯系界面活性劑之含量較佳為0.03重量份以上，更佳為0.1重量份～1重量份，進而較佳為0.2重量份～0.5重量份。若磷酸酯系界面活性劑之含量為上述範圍內，則能夠提供耐溶劑性優異之半導體加工用黏著片材。
C-3. 光聚合起始劑
在一個實施方式中，本發明之黏著劑組合物係紫外線硬化型黏著劑。紫外線硬化型之黏著劑組合物進而包含光聚合起始劑。作為光聚合起始劑，可使用任意合適之起始劑。作為光聚合起始劑，例如，可例舉：2,4,6-三甲基苯偶醯苯基亞膦酸乙酯、(2,4,6-三甲基苯甲醯基)-苯基氧化膦等醯基氧化膦系光聚合起始劑；4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等α-酮醇系化合物；甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉基丙烷-1等苯乙酮系化合物；安息香乙醚、安息香異丙醚、大茴香偶姻甲醚(anisoin methyl ether)等安息香醚系化合物；苯偶醯二甲基縮酮等縮酮系化合物；2-萘磺醯氯等芳香族磺醯氯系化合物；1-苯酮-1,1-丙二酮-2-(o-乙氧羰基)肟等光活性肟系化合物；二苯甲酮、苯甲醯苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物；9-氧硫𠮿、2-氯9-氧硫𠮿、2-甲基9-氧硫𠮿、2,4-二甲基9-氧硫𠮿、異丙基9-氧硫𠮿、2,4-二氯9-氧硫𠮿、2,4-二乙基9-氧硫𠮿、2,4-二異丙基9-氧硫𠮿等9-氧硫𠮿系化合物；樟腦醌；鹵代酮；醯基膦酸酯、2-羥基-1-(4-(4-(2-羥基-2-甲基丙醯基)苄基)苯基-2-甲基丙烷-1等α-羥基苯乙酮。較佳為可使用苯乙酮系化合物。光聚合起始劑可僅使用一種，亦可組合兩種以上使用。
作為光聚合起始劑，可使用市售品。例如，可例舉IGM Resins公司製造之商品名：Omnirad 127、Omnirad 369及Omnirad 651。
光聚合起始劑可以任意合適之量使用。相對於100重量份之上述紫外線硬化型黏著劑，光聚合起始劑之含量較佳為0.5重量份～20重量份，更佳為0.5重量份～10重量份。當光聚合起始劑之含量未達0.5重量份之情形時，有在紫外線照射時不會充分硬化之虞。當光聚合起始劑之含量超過10重量份之情形時，有黏著劑之保存穩定性會降低之虞。
C-4. 添加劑
上述黏著劑組合物可根據需要包含任意合適之添加劑。作為該添加劑，例如，可例舉：交聯劑、觸媒(例如鉑觸媒)、黏著賦予劑、塑化劑、顏料、染料、填充劑、防老化劑、導電材、紫外線吸收劑、光穩定劑、剝離調整劑(輕剝離劑)、軟化劑、磷酸酯系界面活性劑以外之界面活性劑、阻燃劑、溶劑低聚物等。
在一個實施方式中，上述紫外線硬化型黏著劑進而包含交聯劑。作為交聯劑，例如，可例舉：異氰酸酯系交聯劑、環氧系交聯劑、氮丙啶系交聯劑、螯合物系交聯劑等。相對於紫外線硬化型黏著劑中所含之基礎聚合物100重量份，交聯劑之含有比率較佳為0.01重量份～10重量份，更佳為0.02重量份～5重量份，進而較佳為0.025重量份～0.5重量份。藉由交聯劑之含有比率，能夠控制黏著劑層之柔軟性。當交聯劑之含量未達0.01重量份之情形時，有黏著劑變成溶膠狀，無法形成黏著劑層之虞。當交聯劑之含量超過10重量份之情形時，有對被黏著體之密接性會降低之虞。
在一個實施方式中，較佳為使用異氰酸酯系交聯劑。異氰酸酯系交聯劑就能夠與多種官能基反應之方面而言較佳。特佳為使用具有3個以上之異氰酸基之交聯劑。藉由使用異氰酸酯系交聯劑作為交聯劑並且將交聯劑之含有比率設為上述範圍內，能夠提供對被黏著體表面之凹凸之追隨性及與基材之錨固性優異之紫外線硬化型黏著劑。
黏著劑層之厚度可設定為任意合適之值。黏著劑層之厚度較佳為10 μm～500 μm，更佳為15 μm～300 μm，進而較佳為20 μm～250 μm。藉由使黏著劑層之厚度為上述範圍內，能夠對被黏著體發揮出充分之黏著力。
紫外線硬化型黏著劑之凝膠分率較佳為20%～90%，更佳為30%～85%，進而較佳為40%～80%。凝膠分率可作為對乙酸乙酯等溶劑之不溶分而求出。具體地，可作為在將紫外線硬化型黏著劑在23℃下在乙酸乙酯中浸漬7天後不溶成分相對於浸漬前之試樣之重量分率(單位：重量%)而求出。通常，聚合物之凝膠分率等於交聯度，聚合物中之經交聯之部分之越多，則凝膠分率越大。凝膠分率(交聯結構之導入量)可藉由交聯結構之導入方法、或交聯劑之種類及量等調整至期望之範圍。
D. 半導體加工用黏著片材之製造方法
半導體加工用黏著片材可藉由任意合適之方法製造。例如，可藉由將黏著劑溶液(紫外線硬化型黏著劑)塗佈至剝離襯墊並加以乾燥而在剝離襯墊上形成黏著劑層，然後將其貼合至基材的方法來獲得。又，亦可將紫外線硬化型黏著劑塗佈至基材上並加以乾燥而獲得半導體加工用黏著片材。作為黏著劑組合物之塗佈方法，可採用棒塗、氣刀塗佈、凹版塗佈、凹版反轉塗佈、逆轉輥塗佈、唇塗、模塗、浸塗、套版印刷、軟版印刷、絲網印刷等各種方法。作為乾燥方法，可採用任意合適之方法。
E. 半導體加工用黏著片材之用途
半導體加工用黏著片材可良好地用於半導體製造步驟中。如上所述，本發明之實施方式之半導體加工用黏著片材即使當與溶劑接觸之情形時，亦能夠抑制基材與黏著劑層之錨固力降低。因此，亦能夠良好地用於包括溶劑洗淨步驟之半導體製造步驟。作為溶劑洗淨步驟中使用之溶劑，例如，可例舉：2,2-雙(羥甲基)丙酸(DBPA)、丙二醇單甲醚(PGME)、丙二醇單甲醚乙酸酯(MGMEA)、異丙醇(IPA)、甲基乙基酮(MEK)、N-甲基-2-吡咯啶酮(NMP)、氫氧化四甲基銨(TMAH)等半導體製造方法中通常使用之溶劑。
[實施例]
以下，藉由實施例具體說明本發明，但本發明不受該等實施例限定。又，於實施例中，除非另有說明，否則「份」及「%」係重量基準。
[實施例1]
將甲基丙烯酸月桂酯(LMA)/甲基丙烯酸2-羥基乙酯(HEMA)/甲基丙烯酸2-異氰酸基乙酯(MOI)＝100/22/18(莫耳比)(具有碳數為8以上之烷基之丙烯酸或甲基丙烯酸之酯之含有比率：82重量%)聚合，獲得丙烯酸系聚合物。具體地，將LMA、HEMA、0.1重量份之聚合起始劑(偶氮二異丁腈(AIBN))、及溶劑(乙酸乙酯)投入至在1升圓底可分離燒瓶配備可分離蓋、分液漏斗、溫度計、氮氣導入管、李比希冷凝器、真空密封件、攪拌棒、攪拌葉片而成的聚合用實驗裝置中(固形物成分濃度36重量%)。繼而，一面攪拌，一面進行氮氣置換，之後，在氮氣流入下，一面攪拌，一面在65℃下進行聚合，獲得樹脂溶液。繼而，進行空氣置換後，將MOI添加至所得樹脂溶液中，在40℃下進行加成反應，獲得包含丙烯酸系聚合物之溶液。
將100重量份所獲得之丙烯酸系聚合物、5重量份之黏著賦予劑(荒川化學工業公司製造，商品名：TAMANOL 526)、3重量份之輕剝離劑(日油公司製造，商品名：UNIOL D-1200)、0.2重量份之磷酸酯系界面活性劑(東邦化學工業公司製造，商品名：PHOSPHANOL RL-210)、3重量份之聚合起始劑(IGM Resins B.V.公司製造，商品名：Omnirad 379EG)、0.05重量份之交聯劑(Mitsubishi Gas Chemical公司製造，商品名：TETRAD-C)、及2.5重量份之交聯劑(Nippon Polyurethane Industry公司製造，商品名：「Coronate L」)與乙酸乙酯混合，獲得了黏著劑組合物。
將獲得之黏著劑組合物塗佈至對單面利用聚矽氧進行了玻璃處理之厚度為38 μm之聚酯膜(Mitsubishi Polyester Film股份有限公司製造，商品名：MRF)之剝離處理面，並且以120℃加熱2分鐘，形成了厚度為20 μm之黏著劑層。繼而，將該黏著劑層面轉印至作為基材之聚乙烯系膜(日東電工股份有限公司製造，厚度：80 μm)，然後在50℃下保存48小時，獲得了黏著片材。
[實施例2]
除了未添加黏著賦予劑之外，以與實施例1相同之方式獲得黏著劑組合物。
除了使用獲得之黏著劑組合物形成黏著劑層之外，以與實施例1相同之方式製作黏著片材。
[實施例3]
將丙烯酸2-乙基己酯(2EHA)/丙烯酸2-羥基乙酯(HEA)/甲基丙烯酸2-異氰酸基乙酯(MOI)＝100/20/16(莫耳比)(具有碳數為8以上之烷基之丙烯酸或甲基丙烯酸之酯之含有比率：78重量%)聚合，獲得丙烯酸系聚合物。具體地，將2EHA、HEA、0.1重量份之聚合起始劑(偶氮二異丁腈(AIBN))、及溶劑(乙酸乙酯)投入至在1升圓底可分離燒瓶配備可分離蓋、分液漏斗、溫度計、氮氣導入管、李比希冷凝器、真空密封件、攪拌棒、攪拌葉片而成的聚合用實驗裝置中(固形物成分濃度36重量%)。繼而，一面攪拌，一面進行氮氣置換，之後，在氮氣流入下，一面攪拌，一面在65℃下進行聚合，獲得樹脂溶液。繼而，進行空氣置換後，將MOI添加至所得樹脂溶液中，在40℃下進行加成反應，獲得包含丙烯酸系聚合物之溶液。
將100重量份所獲得之丙烯酸系聚合物、2重量份之聚合起始劑(IGM Resins B.V.公司製造，商品名：Omnirad 651)、及0.75重量份之交聯劑(Nippon Polyurethane Industry公司製造，商品名「Coronate L」)與乙酸乙酯混合，獲得了黏著劑組合物。
除了使用獲得之黏著劑組合物形成黏著劑層之外，以與實施例1相同之方式製作黏著片材。
[實施例4]
將丙烯酸2-乙基己酯(2EHA)/丙烯醯嗎啉(ACMO)/丙烯酸2-羥基乙酯(HEA)/甲基丙烯酸2-異氰酸基乙酯(MOI)＝75/25/20/11(莫耳比)(具有碳數為8以上之烷基之丙烯酸或甲基丙烯酸之酯之含有比率：64重量%)聚合，獲得丙烯酸系聚合物。具體地，將2EHA、ACMO、HEA、0.1重量份之聚合起始劑(偶氮二異丁腈(AIBN))、及溶劑(乙酸乙酯)投入至在1升圓底可分離燒瓶配備可分離蓋、分液漏斗、溫度計、氮氣導入管、李比希冷凝器、真空密封件、攪拌棒、攪拌葉片而成的聚合用實驗裝置中(固形物成分濃度36重量%)。繼而，一面攪拌，一面進行氮氣置換，之後，在氮氣流入下，一面攪拌，一面在65℃下進行聚合，獲得樹脂溶液。繼而，進行空氣置換後，將MOI添加至所得樹脂溶液中，在40℃下進行加成反應，獲得包含丙烯酸系聚合物之溶液。
將100重量份所獲得之丙烯酸系聚合物、0.3重量份之磷酸酯系界面活性劑(東邦化學工業公司製造，商品名：PHOSPHANOL RL-210)、3重量份之聚合起始劑(IGM Resins B.V.公司製造，商品名：Omnirad 127)、及0.5重量份之交聯劑(Nippon Polyurethane Industry公司製造，商品名「Coronate L」)與乙酸乙酯混合，獲得了黏著劑組合物。
除了使用獲得之黏著劑組合物形成黏著劑層之外，以與實施例1相同之方式製作黏著片材。
(比較例1)
將丙烯酸丁酯(BA)/丙烯酸乙酯(EA)/丙烯酸2-羥基乙酯(HEA)/甲基丙烯酸2-異氰酸基乙酯(MOI)＝50/50/22/18(莫耳比)(具有碳數為8以上之烷基之丙烯酸或甲基丙烯酸之酯之含有比率：0重量%)聚合，獲得丙烯酸系聚合物。具體地，將BA、EA、HEA、0.1重量份之聚合起始劑(偶氮二異丁腈(AIBN))、及溶劑(乙酸乙酯)投入至在1升圓底可分離燒瓶配備可分離蓋、分液漏斗、溫度計、氮氣導入管、李比希冷凝器、真空密封件、攪拌棒、攪拌葉片而成的聚合用實驗裝置中(固形物成分濃度36重量%)。繼而，一面攪拌，一面進行氮氣置換，之後，在氮氣流入下，一面攪拌，一面進行聚合，獲得樹脂溶液。繼而，進行空氣置換後，將MOI添加至所得樹脂溶液中，在40℃下進行加成反應，獲得包含丙烯酸系聚合物之溶液。
將100重量份所獲得之丙烯酸系聚合物、3重量份之聚合起始劑(IGM Resins B.V.公司製造，商品名：Omnirad 651)、及0.2重量份之交聯劑(Nippon Polyurethane Industry公司製造，商品名「Coronate L」)與乙酸乙酯混合，獲得了黏著劑組合物。
除了使用獲得之黏著劑組合物之外，以與實施例1相同之方式製作黏著片材。
(比較例2)
將由丙烯酸丁酯(BA)/丙烯腈(AN)/丙烯酸(AA)＝80/15/2.5構成之單體組合物(具有碳數為8以上之烷基之丙烯酸或甲基丙烯酸之酯之含有比率：0重量%)聚合，獲得丙烯酸系聚合物。將100重量份所獲得之丙烯酸系聚合物、60重量份之輕剝離劑(ADEKA公司製造，商品名：ADK CIZER D-810)、7重量份之交聯劑(DIC公司製造，商品名：SUPER BECKAMINE SJ820-60N)、及2重量份之交聯劑(Nippon Polyurethane Industry公司製造，商品名「Coronate L」)與乙酸乙酯混合，獲得了黏著劑組合物。
除了使用獲得之黏著劑組合物之外，以與實施例1相同之方式製作黏著片材。
(比較例3)
將由丙烯酸丁酯(BA)/丙烯腈(AN)/丙烯酸(AA)＝80/15/2.5構成之單體組合物(具有碳數為8以上之烷基之丙烯酸或甲基丙烯酸之酯之含有比率：0重量%)聚合，獲得丙烯酸系聚合物。將100重量份所獲得之丙烯酸系聚合物、20重量份之輕剝離劑(ADEKA公司製造，商品名：ADK CIZER D-810)、及10重量份之交聯劑(DIC公司製造，商品名：SUPER BECKAMINE SJ820-60N)與乙酸乙酯混合，獲得了黏著劑組合物。
除了使用獲得之黏著劑組合物之外，以與實施例1相同之方式製造黏著片材。
＜評價＞
使用實施例及比較例中獲得之黏著片材進行以下評價。結果如表1所示。
1. 膨潤度S
A將0.1重量份之用於形成實施例或比較例之黏著劑層之黏著劑組合物用平均孔徑為0.2 μm之多孔質聚四氟乙烯膜包裹成拉繩袋狀，然後用風箏線系住開口，將其作為評價樣品。作為多孔質聚四氟乙烯膜，使用商品名「Nitoflon(註冊商標)NTF1122」(日東電工公司製造，平均孔徑：0.2 μm，孔隙率：75%，厚度：85 μm)。將評價樣品在23℃下在50 mL之N,N-二甲基丙醯胺(東京化成製造)溶液中浸漬1小時，然後，從N,N-二甲基丙醯胺溶液中取出評價樣品。繼而，擦掉附著在外表面之N,N-二甲基丙醯胺溶液，測定評價樣品之重量。
膨潤度(倍)＝(W4－W2－W3)/(W1)
(式中，W1表示0.1重量份之黏著劑組合物之重量，W2表示用於包裹黏著劑組合物之多孔質聚四氟乙烯膜之重量，W3表示風箏線之重量，W4表示浸漬後之評價樣品之重量)
2. 浸漬試驗
將各實施例及比較例中獲得之黏著片材切割成50 mm×50 mm之尺寸，作為評價樣品。準備N,N-二甲基丙醯胺溶液及異丙醇。剝離黏著片材之剝離片材(經剝離處理之聚酯膜)，以不彎折評價樣品之方式在300 ml之N,N-二甲基丙醯胺溶液中浸漬24小時。浸漬後，取出評價樣品，然後在300 ml之異丙醇(東京化成製造)溶液中浸漬10分鐘。之後，取出評價樣品，在23℃下乾燥24小時。繼而，目視觀察評價樣品之狀態，將黏著劑層從基材剝離或者黏著劑層溶出至溶劑中者設為×，將維持黏著劑層形成在基材上之狀態者(黏著劑層未自基材剝離者)設為○。
[表1]
| 實施例1 | 實施例2 | 實施例3 | 實施例4 | 比較例1 | 比較例2 | 比較例3 | ||
| 黏著劑組合物 | 基礎聚合物之組成 | LMA/HEMA/MOI | LMA/HEMA/MOI | 2EHA/HEA/MOI | 2EHA/ACMO/HEA/MOI | BA/EA/HEA/MOI | BA/AN/AA | BA/AN/AA |
| 磷酸酯系界面活性劑之有無 | ○ | ○ | × | ○ | × | × | × | |
| 評價 | 膨潤度 | 1.7 | 2.0 | 1.8 | 1.7 | 2.3 | 2.7 | 2.7 |
| 浸漬試驗 | ○ | ○ | ○ | ○ | × | × | × |
本發明之半導體加工用黏著片材之耐溶劑性優異，能夠良好地用於包括溶劑洗淨步驟之半導體製造步驟。
10:基材
20:黏著劑層
100:半導體加工用黏著片材
圖1係本發明之實施方式之半導體加工用黏著片材之概略剖視圖。
10:基材
20:黏著劑層
100:半導體加工用黏著片材
Claims (7)
- 一種半導體加工用黏著片材，其包括：由包含基礎聚合物之黏著劑組合物形成之黏著劑層、及基材， 將該黏著劑組合物在23℃下在N,N-二甲基丙醯胺溶液中浸漬1小時之膨潤度S A為2.1倍以下。
- 如請求項1之半導體加工用黏著片材，其中在構成上述基礎聚合物之所有單體成分中，具有碳數為8以上之烷基之丙烯酸或甲基丙烯酸之酯之含有比率為50重量%以上。
- 如請求項1之半導體加工用黏著片材，其中上述基礎聚合物係導入有碳-碳雙鍵之聚合物。
- 如請求項1之半導體加工用黏著片材，其中上述基材包含聚酯系樹脂或聚烯烴系樹脂。
- 如請求項1之半導體加工用黏著片材，其中上述黏著劑組合物進而包含磷酸酯系界面活性劑。
- 如請求項5之半導體加工用黏著片材，其中相對於100重量份之上述基礎聚合物，上述磷酸酯系界面活性劑之含量為0.03重量份以上。
- 如請求項1至6中任一項之半導體加工用黏著片材，其用於包括溶劑洗淨步驟之半導體加工步驟。
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