TW202410738A - Pixel circuit - Google Patents

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TW202410738A
TW202410738A TW111131314A TW111131314A TW202410738A TW 202410738 A TW202410738 A TW 202410738A TW 111131314 A TW111131314 A TW 111131314A TW 111131314 A TW111131314 A TW 111131314A TW 202410738 A TW202410738 A TW 202410738A
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transistor
terminal
control
pixel circuit
signal
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TW111131314A
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TWI816519B (en
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蘇文銓
林子淵
葉佳元
陳弘基
劉匡祥
林鈺凱
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友達光電股份有限公司
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Abstract

A pixel circuit is provided. The pixel circuit includes a light-emitting diode, a current control block, a pulse width control block, and a light-emitting driving block. The light emitting diode has an anode and a cathode receiving a system low voltage. The current control block receives a current data voltage and a system high voltage to provide a driving current based on the current data voltage. The pulse width control block receives a grayscale data voltage and a sweeping signal to provide a pulse width signal based on the grayscale data voltage. The light emitting driving block is coupled to the current control block, the pulse width control block and the anode of the light emitting diode, and receives the driving current and the pulse width signal to provide the driving current to the anode of the light emitting diode based on the pulse width signal.

Description

畫素電路Pixel circuit

本發明是有關於一種畫素電路,且特別是有關於一種發光二極體畫素電路。The present invention relates to a pixel circuit, and in particular to a light emitting diode pixel circuit.

因環保意識抬頭,節能省電、使用壽命、色彩飽和度及電源品質等訴求逐漸成為消費者考慮購買的因素,同時受到半導體技術迅速發展與成本降低,驅使發光元件成為未來照明與顯示器市場的發展主流。其中,有機發光二極體(OLED)與微型發光二極體(uLED)為當下使用於自發光顯示面板的主要元件。As environmental awareness rises, energy saving, lifespan, color saturation, and power quality are gradually becoming factors that consumers consider when purchasing. At the same time, the rapid development of semiconductor technology and the reduction of costs have driven light-emitting components to become the mainstream of future lighting and display markets. Among them, organic light-emitting diodes (OLEDs) and micro-light-emitting diodes (uLEDs) are the main components currently used in self-luminous display panels.

然而,微型發光二極體(uLED)和有機發光二極體(OLED)的發光亮度曲線不一樣,亦即操作同樣亮度下,發光二極體的發光效率非常低。並且,由於有機發光二極體的驅動電路所操作的電流區間是落在微型發光二極體的低發光效率區間,因此較早發展的有機發光二極體的驅動電路無法直接應用在微型發光二極體。藉此,為了驅動微型發光二極體,需要對現有的驅動電路作相對應的改動或重新設計。However, the luminance curves of micro-LEDs (uLEDs) and organic LEDs (OLEDs) are different, that is, when operating at the same brightness, the luminous efficiency of the LEDs is very low. In addition, since the current range operated by the driving circuit of the organic LED falls within the low luminous efficiency range of the micro-LED, the driving circuit of the organic LED developed earlier cannot be directly applied to the micro-LED. Therefore, in order to drive the micro-LED, the existing driving circuit needs to be modified or redesigned accordingly.

本發明提供一種畫素電路,可以脈波寬度調變及脈衝振幅調變的方法驅動,以使發光二極體操作在效率的區間且避免發光二極體的發光波長偏移所造成的色偏。The present invention provides a pixel circuit that can be driven by pulse width modulation and pulse amplitude modulation, so that the light-emitting diode operates in an efficiency range and avoids color cast caused by the deviation of the light-emitting wavelength of the light-emitting diode. .

本發明的畫素電路,包括發光二極體、電流控制區塊、脈寬控制區塊、以及發光驅動區塊。發光二極體具有陽極及接收系統低電壓的陰極。電流控制區塊接收電流資料電壓及系統高電壓,以基於電流資料電壓提供驅動電流。脈寬控制區塊接收灰階資料電壓及擺盪信號,以基於灰階資料電壓提供脈寬信號。發光驅動區塊耦接電流控制區塊、脈寬控制區塊及發光二極體的陽極,並且接收驅動電流及脈寬信號,以基於脈寬信號將驅動電流提供至發光二極體的陽極。The pixel circuit of the present invention includes a light-emitting diode, a current control block, a pulse width control block, and a light-emitting driving block. The light-emitting diode has an anode and a cathode that receives the system's low voltage. The current control block receives the current data voltage and the system high voltage to provide driving current based on the current data voltage. The pulse width control block receives the gray-scale data voltage and the swing signal to provide a pulse width signal based on the gray-scale data voltage. The light-emitting driving block is coupled to the current control block, the pulse width control block and the anode of the light-emitting diode, and receives the driving current and the pulse width signal to provide the driving current to the anode of the light-emitting diode based on the pulse width signal.

基於上述,本發明實施例的畫素電路,電流控制區塊基於電流資料電壓提供驅動電流,並且脈寬控制區塊基於灰階資料電壓提供脈寬信號。藉此,畫素電路透過脈衝振幅調變固定驅動電流的電流密度,讓發光二極體操作在效率的區間,同時固定驅動電流的大小,避免發光二極體的發光波長偏移所造成的色偏,並且透過脈波寬度調變控制發光二極體的發光時間長短,來產生不同灰階。Based on the above, in the pixel circuit of the embodiment of the present invention, the current control block provides a driving current based on the current data voltage, and the pulse width control block provides a pulse width signal based on the grayscale data voltage. In this way, the pixel circuit fixes the current density of the driving current through pulse amplitude modulation, allowing the light-emitting diodes to operate in the efficiency range. At the same time, the size of the driving current is fixed to avoid color changes caused by the deviation of the light-emitting wavelength of the light-emitting diodes. bias, and control the length of the light-emitting diode's light-emitting time through pulse width modulation to produce different gray levels.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below and described in detail with reference to the accompanying drawings.

除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed to have meanings consistent with their meanings in the context of the relevant technology and the present invention, and are not to be construed as idealistic or excessive Formal meaning, unless expressly defined as such herein.

應當理解,儘管術語”第一”、”第二”、”第三”等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的”第一元件”、”部件”、”區域”、”層”或”部分”可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or sections or parts thereof shall not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a "first element", "component", "region", "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本文所使用的,除非內容清楚地指示,否則單數形式”一”、”一個”和”該”旨在包括複數形式,包括”至少一個”。”或”表示”及/或”。如本文所使用的,術語”及/或”包括一個或多個相關所列項目的任何和所有組合。還應當理解,當在本說明書中使用時,術語”包括”及/或”包括”指定所述特徵、區域、整體、步驟、操作、元件的存在及/或部件,但不排除一個或多個其它特徵、區域整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms including "at least one" unless the content clearly dictates otherwise. "or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will also be understood that when used in this specification, the terms "comprises" and/or "includes" designate the presence of stated features, regions, integers, steps, operations, elements and/or components but do not exclude one or more The presence or addition of other features, regions, steps, operations, elements, parts and/or combinations thereof.

圖1為依據本發明第一實施例的畫素電路的電路示意圖。請參照圖1,在本實施例中,畫素電路100包括發光二極體DEL1、電流控制區塊110、脈寬控制區塊120以及發光驅動區塊130,其中發光二極體DEL1例如包括微型發光二極體,但本發明實施例不以此為限。FIG1 is a circuit diagram of a pixel circuit according to the first embodiment of the present invention. Referring to FIG1 , in the present embodiment, the pixel circuit 100 includes a light-emitting diode DEL1, a current control block 110, a pulse width control block 120, and a light-emitting driving block 130, wherein the light-emitting diode DEL1 includes, for example, a micro light-emitting diode, but the present embodiment is not limited thereto.

發光二極體DEL1具有陽極及接收系統低電壓VSS的陰極。電流控制區塊110接收電流資料電壓DataI及系統高電壓VDD,以基於電流資料電壓DataI提供驅動電流Idrv。脈寬控制區塊120接收灰階資料電壓DataG及擺盪信號Sweep,以基於灰階資料電壓DataG提供脈寬信號PW。發光驅動區塊130耦接電流控制區塊110、脈寬控制區塊120及發光二極體DEL1的陽極,並且接收驅動電流Idrv及脈寬信號PW,以基於脈寬信號PW將驅動電流Idrv提供至發光二極體DEL1的陽極。The light-emitting diode DEL1 has an anode and a cathode receiving the system low voltage VSS. The current control block 110 receives the current data voltage DataI and the system high voltage VDD to provide a driving current Idrv based on the current data voltage DataI. The pulse width control block 120 receives the grayscale data voltage DataG and the swing signal Sweep to provide a pulse width signal PW based on the grayscale data voltage DataG. The light-emitting driving block 130 is coupled to the current control block 110, the pulse width control block 120 and the anode of the light-emitting diode DEL1, and receives the driving current Idrv and the pulse width signal PW to provide the driving current Idrv to the anode of the light-emitting diode DEL1 based on the pulse width signal PW.

藉此,畫素電路100透過脈衝振幅調變固定驅動電流Idrv的電流密度,讓發光二極體DEL1操作在效率的區間,同時固定驅動電流Idrv的大小,避免發光二極體DEL1的發光波長偏移所造成的色偏,並且透過脈波寬度調變控制發光二極體DEL1的發光時間長短,來產生不同灰階。Thereby, the pixel circuit 100 fixes the current density of the driving current Idrv through pulse amplitude modulation, allowing the light-emitting diode DEL1 to operate in the efficiency range, and at the same time fixes the size of the driving current Idrv to avoid the deviation of the emission wavelength of the light-emitting diode DEL1. The color shift caused by the shift is controlled, and the length of the light-emitting diode DEL1 is controlled through pulse width modulation to produce different gray levels.

在本實施例中,電流控制區塊110包括第一電晶體T1、第二電晶體T2、第三電晶體T3、第四電晶體T4、第五電晶體T5、第六電晶體T6、以及第一電容C1,其中第一電晶體T1、第二電晶體T2、第三電晶體T3、第四電晶體T4、第五電晶體T5、第六電晶體T6是以P型電晶體為例,但本發明實施例不以此為限。第一電晶體T1具有接收系統高電壓VDD的第一端、控制端、以及提供驅動電流Idrv的第二端。第二電晶體T2具有第一端、接收第一控制信號S1的控制端、以及接收第一參考電壓Vref1的第二端,其中第一參考電壓Vref1可以是任意的直流準位。In the present embodiment, the current control block 110 includes a first transistor T1, a second transistor T2, a third transistor T3, a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, and a first capacitor C1, wherein the first transistor T1, the second transistor T2, the third transistor T3, the fourth transistor T4, the fifth transistor T5, and the sixth transistor T6 are P-type transistors, but the present embodiment is not limited thereto. The first transistor T1 has a first end for receiving a system high voltage VDD, a control end, and a second end for providing a driving current Idrv. The second transistor T2 has a first end, a control end for receiving a first control signal S1, and a second end for receiving a first reference voltage Vref1, wherein the first reference voltage Vref1 can be any DC level.

第三電晶體T3具有接收電流資料電壓DataI的第一端、接收第二控制信號S2的控制端、以及第二端。第一電容C1耦接於第一電晶體T1的控制端與第三電晶體T3的第二端之間。第四電晶體T4具有耦接第三電晶體T3的第二端的第一端、接收發射控制信號EM的控制端、以及接收第二參考電壓Vref2的第二端,其中第二參考電壓Vref2可以是不同於第一參考電壓Vref1的直流準位。第五電晶體T5具有耦接第一電晶體T1的第二端的第一端、接收第三控制信號S3的控制端、以及耦收第二電晶體T2的第一端的第二端。第六電晶體T6具有耦接第一電晶體T1的控制端的第一端、接收第二控制信號S2的控制端、以及耦收第二電晶體T2的第一端的第二端。The third transistor T3 has a first terminal receiving the current data voltage DataI, a control terminal receiving the second control signal S2, and a second terminal. The first capacitor C1 is coupled between the control terminal of the first transistor T1 and the second terminal of the third transistor T3. The fourth transistor T4 has a first terminal coupled to the second terminal of the third transistor T3, a control terminal receiving the emission control signal EM, and a second terminal receiving the second reference voltage Vref2, where the second reference voltage Vref2 may be A DC level that is different from the first reference voltage Vref1. The fifth transistor T5 has a first terminal coupled to the second terminal of the first transistor T1, a control terminal receiving the third control signal S3, and a second terminal coupled to the first terminal of the second transistor T2. The sixth transistor T6 has a first terminal coupled to the control terminal of the first transistor T1, a control terminal receiving the second control signal S2, and a second terminal coupled to the first terminal of the second transistor T2.

在本實施例中,脈寬控制區塊120包括第七電晶體T7、第八電晶體T8、第九電晶體T9、第十電晶體T10、第十一電晶體T11、以及第二電容C2,其中第七電晶體T7、第八電晶體T8、第九電晶體T9、第十電晶體T10、第十一電晶體T11是以P型電晶體為例,但本發明實施例不以此為限。In the present embodiment, the pulse width control block 120 includes a seventh transistor T7, an eighth transistor T8, a ninth transistor T9, a tenth transistor T10, an eleventh transistor T11, and a second capacitor C2, wherein the seventh transistor T7, the eighth transistor T8, the ninth transistor T9, the tenth transistor T10, and the eleventh transistor T11 are P-type transistors, but the present embodiment is not limited thereto.

第七電晶體T7具有接收第一參考電壓Vref1的第一端、接收第一控制信號S1的控制端、以及第二端。第八電晶體T8具有接收灰階資料電壓DataG的第一端、接收第二控制信號S2的控制端、以及第二端。第九電晶體T9具有耦接第八電晶體T8的第二端的第一端、接收發射控制信號EM的控制端、以及接收擺盪信號Sweep的第二端。第二電容C2耦接於第七電晶體T7的第二端及第六電晶體T6的第二端之間。The seventh transistor T7 has a first terminal receiving the first reference voltage Vref1, a control terminal receiving the first control signal S1, and a second terminal. The eighth transistor T8 has a first terminal for receiving the grayscale data voltage DataG, a control terminal for receiving the second control signal S2, and a second terminal. The ninth transistor T9 has a first terminal coupled to the second terminal of the eighth transistor T8, a control terminal receiving the emission control signal EM, and a second terminal receiving the swing signal Sweep. The second capacitor C2 is coupled between the second terminal of the seventh transistor T7 and the second terminal of the sixth transistor T6.

第十電晶體T10,具有耦接第七電晶體T7的第二端的一第一端、接收一第三控制信號S3的一控制端、以及提供脈寬信號PW的一第二端。第十一電晶體T11具有耦接第十電晶體T10的第二端的第一端、耦接第七電晶體T7的第二端的控制端、以及接收第四控制信號S4的第二端。The tenth transistor T10 has a first terminal coupled to the second terminal of the seventh transistor T7, a control terminal receiving a third control signal S3, and a second terminal providing the pulse width signal PW. The eleventh transistor T11 has a first terminal coupled to the second terminal of the tenth transistor T10 , a control terminal coupled to the second terminal of the seventh transistor T7 , and a second terminal receiving the fourth control signal S4 .

在本實施例中,發光驅動區塊130包括第十二電晶體T12及第十三電晶體T13,其中第十二電晶體T12及第十三電晶體T13是以P型電晶體為例,但本發明實施例不以此為限。第十二電晶體T12具有接收驅動電流Idrv的第一端、接收脈寬信號PW的控制端、以及耦接發光二極體DEL1的陽極的第二端。第十三電晶體T13具有接收第一參考電壓Vref1的第一端、接收第四控制信號S4的控制端、以及耦接第十二電晶體T12的控制端的第二端。In this embodiment, the light-emitting driving block 130 includes a twelfth transistor T12 and a thirteenth transistor T13, where the twelfth transistor T12 and the thirteenth transistor T13 are P-type transistors as an example, but The embodiments of the present invention are not limited to this. The twelfth transistor T12 has a first terminal receiving the driving current Idrv, a control terminal receiving the pulse width signal PW, and a second terminal coupled to the anode of the light-emitting diode DEL1. The thirteenth transistor T13 has a first terminal receiving the first reference voltage Vref1, a control terminal receiving the fourth control signal S4, and a second terminal coupled to the control terminal of the twelfth transistor T12.

在本實施例中,由於不同發光色彩的發光二極體DEL1具有不同的發光效率,因此對於同一灰階值,電流資料電壓DataI在應用於具有不同發光色彩的發光二極體DEL1的狀態下,可以具有不同的電壓準位。In this embodiment, since the light-emitting diodes DEL1 with different light-emitting colors have different luminous efficiencies, for the same gray scale value, when the current data voltage DataI is applied to the light-emitting diodes DEL1 with different light-emitting colors, Can have different voltage levels.

圖2為依據本發明第一實施例的畫素電路在單一畫面期間中的驅動波形示意圖。請參照圖1及圖2,在單一畫面期間中,至少包括第一重置期間Rst1、補償期間Cmp、第二重置期間Rst2、發光期間Emi,並且第一參考電壓Vref1可以為P型電晶體的致能準位(例如低電準位)。FIG. 2 is a schematic diagram of the driving waveform of the pixel circuit during a single picture period according to the first embodiment of the present invention. Please refer to Figures 1 and 2. In a single picture period, it includes at least a first reset period Rst1, a compensation period Cmp, a second reset period Rst2, and a light emitting period Emi, and the first reference voltage Vref1 can be a P-type transistor. Enable level (such as low power level).

在第一重置期間Rst1中,第一控制信號S1及第二控制信號S2為致能準位(例如低壓準位),第三控制信號S3、第四控制信號S4、發射控制信號EM及擺盪信號Sweep維持於禁能準位(例如高電壓準位)。此時,第二電晶體T2、第三電晶體T3、第六電晶體T6、第七電晶體T7及第八電晶體T8呈現導通,並且第四電晶體T4、第五電晶體T5、第九電晶體T9、第十電晶體T10及第十三電晶體T13呈現截止。第一電晶體T1及第十一電晶體T11受第一參考電壓Vref1的影響而導通,並且第十二電晶體T12因為為禁能準位的第四控制信號S4而截止。In the first reset period Rst1, the first control signal S1 and the second control signal S2 are at an enable level (e.g., a low voltage level), and the third control signal S3, the fourth control signal S4, the emission control signal EM, and the swing signal Sweep are maintained at a disable level (e.g., a high voltage level). At this time, the second transistor T2, the third transistor T3, the sixth transistor T6, the seventh transistor T7, and the eighth transistor T8 are turned on, and the fourth transistor T4, the fifth transistor T5, the ninth transistor T9, the tenth transistor T10, and the thirteenth transistor T13 are turned off. The first transistor T1 and the eleventh transistor T11 are turned on by the first reference voltage Vref1, and the twelfth transistor T12 is turned off because of the fourth control signal S4 at the disable level.

在補償期間Cmp中,第二控制信號S2及第三控制信號S3為致能準位,第一控制信號S1、第四控制信號S4、發射控制信號EM、擺盪信號Sweep為禁能準位。此時,第三電晶體T3、第五電晶體T5、第六電晶體T6、第八電晶體T8及第十電晶體T10呈現導通,並且第二電晶體T2、第四電晶體T4、第七電晶體T7、第九電晶體T9、及第十三電晶體T13呈現截止。第一電晶體T1的控制端的電壓透過漏電流而上升至系統高電壓VDD-第一電晶體T1的臨界電壓,第十一電晶體T11及第十二電晶體T12的控制端的電壓透過漏電流上升至高電壓準位-第十一電晶體T11的臨界電壓。In the compensation period Cmp, the second control signal S2 and the third control signal S3 are at the enable level, and the first control signal S1, the fourth control signal S4, the emission control signal EM, and the swing signal Sweep are at the disable level. At this time, the third transistor T3, the fifth transistor T5, the sixth transistor T6, the eighth transistor T8, and the tenth transistor T10 are turned on, and the second transistor T2, the fourth transistor T4, the seventh transistor T7, the ninth transistor T9, and the thirteenth transistor T13 are turned off. The voltage of the control end of the first transistor T1 rises to the system high voltage VDD-critical voltage of the first transistor T1 through the leakage current, and the voltage of the control end of the eleventh transistor T11 and the twelfth transistor T12 rises to the high voltage level-critical voltage of the eleventh transistor T11 through the leakage current.

在第二重置期間Rst2中,第四控制信號S4及發射控制信號EM為致能準位,並且第一控制信號S1、第二控制信號S2、第三控制信號S3以及擺盪信號Sweep為禁能準位。此時,第四電晶體T4、第九電晶體T9及第十三電晶體T13呈現導通,並且第二電晶體T2、第三電晶體T3、第五電晶體T5、第六電晶體T6、第七電晶體T7、第八電晶體T8及第十電晶體T10呈現截止。並且,第一電晶體T1的控制端的電壓為系統高電壓VDD-第一電晶體T1的臨界電壓+(電流資料電壓DataI-第二參考電壓Vref2),第十一電晶體T11的控制端的電壓為高電壓準位-第十一電晶體T11的臨界電壓-(灰階資料電壓DataG-高電壓準位),並且第十二電晶體T12的控制端的電壓為第一參考電壓Vref1。During the second reset period Rst2, the fourth control signal S4 and the emission control signal EM are at the enable level, and the first control signal S1, the second control signal S2, the third control signal S3 and the swing signal Sweep are at the disabled level. accurate position. At this time, the fourth transistor T4, the ninth transistor T9, and the thirteenth transistor T13 are turned on, and the second transistor T2, the third transistor T3, the fifth transistor T5, the sixth transistor T6, and the third transistor T6 are turned on. The seventh transistor T7, the eighth transistor T8 and the tenth transistor T10 are turned off. Moreover, the voltage at the control terminal of the first transistor T1 is the system high voltage VDD - the critical voltage of the first transistor T1 + (current data voltage DataI - the second reference voltage Vref2), and the voltage at the control terminal of the eleventh transistor T11 is The high voltage level - the critical voltage of the eleventh transistor T11 - (grayscale data voltage DataG - high voltage level), and the voltage of the control terminal of the twelfth transistor T12 is the first reference voltage Vref1.

在發光期間Emi中,第一控制信號S1、第二控制信號S2、第三控制信號S3、第四控制信號S4為禁能準位,發射控制信號EM為致能準位,擺盪信號Sweep由禁能準位線性改變至致能準位。此時,第四電晶體T4及第九電晶體T9呈現導通,並且第二電晶體T2、第三電晶體T3、第五電晶體T5、第六電晶體T6、第七電晶體T7、第八電晶體T8、第十電晶體T10及第十三電晶體T13呈現截止。並且,第一電晶體T1的控制端的電壓為系統高電壓VDD-第一電晶體T1的臨界電壓+(電流資料電壓DataI-第二參考電壓Vref2),第十一電晶體T11的控制端的電壓為高電壓準位-第十一電晶體T11的臨界電壓-(灰階資料電壓DataG-高電壓準位)+擺盪信號Sweep,並且第十二電晶體T12的控制端的電壓在第十一電晶體T11導通時由低電壓準位切換至高電壓準位。During the light-emitting period Emi, the first control signal S1, the second control signal S2, the third control signal S3, and the fourth control signal S4 are at the disabled level, the emission control signal EM is at the enabled level, and the swing signal Sweep is at the disabled level. The energy level changes linearly to the enabling level. At this time, the fourth transistor T4 and the ninth transistor T9 are turned on, and the second transistor T2, the third transistor T3, the fifth transistor T5, the sixth transistor T6, the seventh transistor T7, and the eighth transistor T7 are turned on. The transistor T8, the tenth transistor T10, and the thirteenth transistor T13 are turned off. Moreover, the voltage at the control terminal of the first transistor T1 is the system high voltage VDD - the critical voltage of the first transistor T1 + (current data voltage DataI - the second reference voltage Vref2), and the voltage at the control terminal of the eleventh transistor T11 is High voltage level - critical voltage of the eleventh transistor T11 - (grayscale data voltage DataG - high voltage level) + swing signal Sweep, and the voltage of the control terminal of the twelfth transistor T12 is at the level of the eleventh transistor T11 When turned on, it switches from a low voltage level to a high voltage level.

在本實施例中,第二重置期間Rst2及發光期間Emi在單一畫面期間可重覆多次執行,亦即第十二電晶體T12及第十三電晶體T13於單一畫面期間中多次開關,其中開關的次數影響畫面的閃爍(flicker)程度。或者,第二重置期間Rst2及發光期間Emi在多個畫面期間中可重覆多次執行,亦即第十二電晶體T12及第十三電晶體T13可於多個畫面期間中多次開關。In this embodiment, the second reset period Rst2 and the luminous period Emi can be repeatedly executed multiple times in a single frame period, that is, the twelfth transistor T12 and the thirteenth transistor T13 are switched multiple times in a single frame period, wherein the number of switching affects the flicker degree of the frame. Alternatively, the second reset period Rst2 and the luminous period Emi can be repeatedly executed multiple times in multiple frame periods, that is, the twelfth transistor T12 and the thirteenth transistor T13 can be switched multiple times in multiple frame periods.

圖3為依據本發明第二實施例的畫素電路的電路示意圖。請參照圖1及圖3,畫素電路200大致相同於畫素電路100,其不同之處在於電流控制區塊210,其中相同或相似元件使用相同或相似元件。相較於電流控制區塊110,電流控制區塊210是省略第六電晶體T6,亦即電晶體T5的第二端更直接耦接第一電晶體T1的控制端。FIG3 is a circuit diagram of a pixel circuit according to a second embodiment of the present invention. Referring to FIG1 and FIG3 , the pixel circuit 200 is substantially the same as the pixel circuit 100, and the difference lies in the current control block 210, in which the same or similar components are used. Compared with the current control block 110, the current control block 210 omits the sixth transistor T6, that is, the second end of the transistor T5 is more directly coupled to the control end of the first transistor T1.

圖4為依據本發明第三實施例的畫素電路的電路示意圖。請參照圖1及圖4,畫素電路300大致相同於畫素電路100,其不同之處在於電流控制區塊310,其中相同或相似元件使用相同或相似元件。相較於電流控制區塊110,電流控制區塊310省略第六電晶體T6,並且更改第三電晶體T3及第四電晶體T4所接收的電壓。進一步來說,在本實施例中,電晶體T5的第二端更直接耦接第一電晶體T1的控制端,第三電晶體T3的第一端接收擺盪信號Sweep,並且第四電晶體T4的第二端接收電流資料電壓DataI。FIG. 4 is a schematic circuit diagram of a pixel circuit according to a third embodiment of the present invention. Referring to FIGS. 1 and 4 , the pixel circuit 300 is substantially the same as the pixel circuit 100 , except that the current control block 310 uses the same or similar components. Compared with the current control block 110, the current control block 310 omits the sixth transistor T6 and changes the voltages received by the third transistor T3 and the fourth transistor T4. Furthermore, in this embodiment, the second terminal of the transistor T5 is directly coupled to the control terminal of the first transistor T1, the first terminal of the third transistor T3 receives the swing signal Sweep, and the fourth transistor T4 The second terminal receives the current data voltage DataI.

圖5為依據本發明第四實施例的畫素電路的電路示意圖。請參照圖1及圖5,畫素電路400大致相同於畫素電路100,其不同之處在於電流控制區塊410、脈寬控制區塊420、發光驅動區塊430,其中相同或相似元件使用相同或相似元件。在本實施例中,其中第三控制信號S3是相同於第二控制信號S2。FIG5 is a circuit diagram of a pixel circuit according to a fourth embodiment of the present invention. Referring to FIG1 and FIG5 , the pixel circuit 400 is substantially the same as the pixel circuit 100, and the difference lies in the current control block 410, the pulse width control block 420, and the light-emitting drive block 430, wherein the same or similar components are used. In this embodiment, the third control signal S3 is the same as the second control signal S2.

在電流控制區塊410中,第六電晶體T6被省略,亦即電晶體T5的第二端更直接耦接第一電晶體T1的控制端,第三電晶體T3的第一端接收第二參考電壓Vref2,並且第四電晶體T4的第二端接收電流資料電壓DataI,其中第二參考電壓Vref2可以是大於系統低電壓VSS的直流準位。In the current control block 410, the sixth transistor T6 is omitted, that is, the second end of the transistor T5 is more directly coupled to the control end of the first transistor T1, the first end of the third transistor T3 receives the second reference voltage Vref2, and the second end of the fourth transistor T4 receives the current data voltage DataI, wherein the second reference voltage Vref2 can be a DC level greater than the system low voltage VSS.

在脈寬控制區塊420中,更包括第三電容C3,第三電容C3耦接於第七電晶體T7的第一端與第七電晶體T7的第二端之間,並且第十一電晶體T11的第二端是接收第二參考電壓Vref2。在發光驅動區塊430中,更包括第十四電晶體T14,第十四電晶體T14具有耦接第十二電晶體T12的第二端的第一端、接收脈寬發射信號EPWN的控制端、以及耦接發光二極體DEL1的陽極的第二端。The pulse width control block 420 further includes a third capacitor C3. The third capacitor C3 is coupled between the first terminal of the seventh transistor T7 and the second terminal of the seventh transistor T7, and the eleventh capacitor C3 is coupled between the first terminal of the seventh transistor T7 and the second terminal of the seventh transistor T7. The second terminal of the crystal T11 receives the second reference voltage Vref2. The light-emitting driving block 430 further includes a fourteenth transistor T14. The fourteenth transistor T14 has a first end coupled to the second end of the twelfth transistor T12, a control end that receives the pulse width emission signal EPWN, and a second terminal coupled to the anode of the light-emitting diode DEL1.

圖6為依據本發明第四實施例的畫素電路在單一畫面期間中的驅動波形示意圖。請參照圖5及圖6,在單一畫面期間中,至少包括第一重置期間Rst1、補償期間Cmp、第二重置期間Rst2、發光期間Emi,並且第一參考電壓Vref1可以為P型電晶體的致能準位(例如低電準位)。FIG. 6 is a schematic diagram of the driving waveform of the pixel circuit during a single picture period according to the fourth embodiment of the present invention. Please refer to Figures 5 and 6. In a single picture period, it includes at least a first reset period Rst1, a compensation period Cmp, a second reset period Rst2, and a light-emitting period Emi, and the first reference voltage Vref1 can be a P-type transistor. Enable level (such as low power level).

在第一重置期間Rst1中,第一控制信號S1及發射控制信號EM為致能準位(例如低壓準位),第二控制信號S2、第三控制信號S3、第四控制信號S4、脈寬發射信號EPWN及擺盪信號Sweep維持於禁能準位(例如高電壓準位)。此時,第二電晶體T2、第四電晶體T4及第七電晶體T7呈現導通,並且第三電晶體T3、第五電晶體T5、第八電晶體8T、第九電晶體T9、第十電晶體T10、第十三電晶體T13及第十四電晶體T14呈現截止。並且,第一電晶體T1及第十一電晶體T11受第一參考電壓Vref1的影響而導通,並且第十二電晶體T12受第二參考電壓Vref2的影響而截止。During the first reset period Rst1, the first control signal S1 and the emission control signal EM are at the enable level (such as a low voltage level), and the second control signal S2, the third control signal S3, the fourth control signal S4, and the pulse The wide emission signal EPWN and the swing signal Sweep are maintained at a disabled level (such as a high voltage level). At this time, the second transistor T2, the fourth transistor T4, and the seventh transistor T7 are turned on, and the third transistor T3, the fifth transistor T5, the eighth transistor 8T, the ninth transistor T9, and the tenth transistor T7 are turned on. The transistor T10, the thirteenth transistor T13, and the fourteenth transistor T14 are turned off. Furthermore, the first transistor T1 and the eleventh transistor T11 are turned on under the influence of the first reference voltage Vref1, and the twelfth transistor T12 is turned off under the influence of the second reference voltage Vref2.

在補償期間Cmp中,第二控制信號S2及第三控制信號S3為致能準位,第一控制信號S1、第四控制信號S4、發射控制信號EM、脈寬發射信號EPWN及擺盪信號Sweep為禁能準位。此時,第三電晶體T3、第五電晶體T5、第八電晶體T8及第十電晶體T10呈現導通,並且第二電晶體T2、第四電晶體T4、第七電晶體T7、第九電晶體T9、第十三電晶體T13及第十四電晶體T14呈現截止。第一電晶體T1的控制端的電壓透過漏電流而上升至系統高電壓VDD-第一電晶體T1的臨界電壓,第十一電晶體T11及第十二電晶體T12的控制端的電壓透過漏電流上升至第二參考電壓Vref2-第十一電晶體T11的臨界電壓。In the compensation period Cmp, the second control signal S2 and the third control signal S3 are at the enable level, and the first control signal S1, the fourth control signal S4, the emission control signal EM, the pulse width emission signal EPWN and the swing signal Sweep are at the disable level. At this time, the third transistor T3, the fifth transistor T5, the eighth transistor T8 and the tenth transistor T10 are turned on, and the second transistor T2, the fourth transistor T4, the seventh transistor T7, the ninth transistor T9, the thirteenth transistor T13 and the fourteenth transistor T14 are turned off. The voltage of the control end of the first transistor T1 rises to the system high voltage VDD-critical voltage of the first transistor T1 through the leakage current, and the voltage of the control end of the eleventh transistor T11 and the twelfth transistor T12 rises to the second reference voltage Vref2-critical voltage of the eleventh transistor T11 through the leakage current.

在第二重置期間Rst2中,第四控制信號S4及發射控制信號EM為致能準位,並且第一控制信號S1、第二控制信號S2、第三控制信號S3、脈寬發射信號EPWN及擺盪信號Sweep為禁能準位。此時,第四電晶體T4、第九電晶體T9及第十三電晶體T13呈現導通,並且第二電晶體T2、第三電晶體T3、第五電晶體T5、第六電晶體T6、第七電晶體T7、第八電晶體T8、第十電晶體T10及第十四電晶體T14呈現截止。並且,第一電晶體T1的控制端的電壓為系統高電壓VDD-第一電晶體T1的臨界電壓+(電流資料電壓DataI-第二參考電壓Vref2),第十一電晶體T11的控制端的電壓為第二參考電壓Vref2-第十一電晶體T11的臨界電壓-(灰階資料電壓DataG-高電壓準位),並且第十二電晶體T12的控制端的電壓為第一參考電壓Vref1。In the second reset period Rst2, the fourth control signal S4 and the emission control signal EM are at the enable level, and the first control signal S1, the second control signal S2, the third control signal S3, the pulse width emission signal EPWN and The swing signal Sweep is a disabled level. At this time, the fourth transistor T4, the ninth transistor T9, and the thirteenth transistor T13 are turned on, and the second transistor T2, the third transistor T3, the fifth transistor T5, the sixth transistor T6, and the third transistor T6 are turned on. The seventh transistor T7, the eighth transistor T8, the tenth transistor T10 and the fourteenth transistor T14 are turned off. Moreover, the voltage at the control terminal of the first transistor T1 is the system high voltage VDD - the critical voltage of the first transistor T1 + (current data voltage DataI - the second reference voltage Vref2), and the voltage at the control terminal of the eleventh transistor T11 is The second reference voltage Vref2 - the threshold voltage of the eleventh transistor T11 - (grayscale data voltage DataG - high voltage level), and the voltage of the control terminal of the twelfth transistor T12 is the first reference voltage Vref1.

在發光期間Emi中,第一控制信號S1、第二控制信號S2、第三控制信號S3、第四控制信號S4為禁能準位,發射控制信號EM及脈寬發射信號EPWN為致能準位,擺盪信號Sweep由禁能準位線性改變至致能準位。此時,第四電晶體T4及第九電晶體T9呈現導通,並且第二電晶體T2、第三電晶體T3、第五電晶體T5、第六電晶體T6、第七電晶體T7、第八電晶體T8、第十電晶體T10、第十三電晶體T13及第十四電晶體T14呈現截止。並且,第一電晶體T1的控制端的電壓為系統高電壓VDD-第一電晶體T1的臨界電壓+(電流資料電壓DataI-第二參考電壓Vref2),第十一電晶體T11的控制端的電壓為高電壓準位-第十一電晶體T11的臨界電壓-(灰階資料電壓DataG-高電壓準位)+擺盪信號Sweep,並且第十二電晶體T12的控制端的電壓在第十一電晶體T11導通時由低電壓準位切換至高電壓準位。In the light emission period Emi, the first control signal S1, the second control signal S2, the third control signal S3, and the fourth control signal S4 are at the disable level, the emission control signal EM and the pulse width emission signal EPWN are at the enable level, and the swing signal Sweep changes linearly from the disable level to the enable level. At this time, the fourth transistor T4 and the ninth transistor T9 are turned on, and the second transistor T2, the third transistor T3, the fifth transistor T5, the sixth transistor T6, the seventh transistor T7, the eighth transistor T8, the tenth transistor T10, the thirteenth transistor T13, and the fourteenth transistor T14 are turned off. Furthermore, the voltage of the control end of the first transistor T1 is the system high voltage VDD-the critical voltage of the first transistor T1+(the current data voltage DataI-the second reference voltage Vref2), the voltage of the control end of the eleventh transistor T11 is the high voltage level-the critical voltage of the eleventh transistor T11-(the grayscale data voltage DataG-the high voltage level)+the swing signal Sweep, and the voltage of the control end of the twelfth transistor T12 is switched from the low voltage level to the high voltage level when the eleventh transistor T11 is turned on.

綜上所述,本發明實施例的畫素電路,電流控制區塊基於電流資料電壓提供驅動電流,並且脈寬控制區塊基於灰階資料電壓提供脈寬信號。藉此,畫素電路透過脈衝振幅調變固定驅動電流的電流密度,讓發光二極體操作在效率的區間,同時固定驅動電流的大小,避免發光二極體的發光波長偏移所造成的色偏,並且透過脈波寬度調變控制發光二極體的發光時間長短,來產生不同灰階。In summary, in the pixel circuit of the embodiment of the present invention, the current control block provides the driving current based on the current data voltage, and the pulse width control block provides the pulse width signal based on the grayscale data voltage. Thus, the pixel circuit fixes the current density of the driving current through pulse amplitude modulation, so that the LED operates in the efficiency range, and at the same time fixes the size of the driving current to avoid the color shift caused by the wavelength deviation of the LED, and controls the light emission time of the LED through pulse width modulation to generate different grayscales.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above by the embodiments, they are not intended to limit the present invention. Any person with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be defined by the scope of the attached patent application.

100、200、300、400:畫素電路 110、210、310、410:電流控制區塊 120、420:脈寬控制區塊 130、430:發光驅動區塊 C1:第一電容 C2:第二電容 C3:第三電容 Cmp:補償期間 DataG:灰階資料電壓 DataI:電流資料電壓 DEL1:發光二極體 EM:發射控制信號 Emi:發光期間 EPWN:脈寬發射信號 Idrv:驅動電流 PW:脈寬信號 Rst1:第一重置期間 Rst2:第二重置期間 S1:第一控制信號 S2:第二控制信號 S3:第三控制信號 S4:第四控制信號 Sweep:擺盪信號 Sweep:擺盪信號 T1:第一電晶體 T10:第十電晶體 T11:第十一電晶體 T12:第十二電晶體 T13:第十三電晶體 T14:第十四電晶體 T2:第二電晶體 T3:第三電晶體 T4:第四電晶體 T5:第五電晶體 T6:第六電晶體 T7:第七電晶體 T8:第八電晶體 T9:第九電晶體 VDD:系統高電壓 Vref1:第一參考電壓 Vref2:第二參考電壓 VSS:系統低電壓 100, 200, 300, 400: pixel circuit 110, 210, 310, 410: current control block 120, 420: pulse width control block 130, 430: light-emitting drive block C1: first capacitor C2: second capacitor C3: third capacitor Cmp: compensation period DataG: grayscale data voltage DataI: current data voltage DEL1: light-emitting diode EM: emission control signal Emi: emission period EPWN: pulse width emission signal Idrv: drive current PW: pulse width signal Rst1: first reset period Rst2: second reset period S1: first control signal S2: second control signal S3: third control signal S4: fourth control signal Sweep: swing signal Sweep: swing signal T1: first transistor T10: tenth transistor T11: eleventh transistor T12: twelfth transistor T13: thirteenth transistor T14: fourteenth transistor T2: second transistor T3: third transistor T4: fourth transistor T5: fifth transistor T6: sixth transistor T7: seventh transistor T8: eighth transistor T9: ninth transistor VDD: system high voltage Vref1: first reference voltage Vref2: second reference voltage VSS: system low voltage

圖1為依據本發明第一實施例的畫素電路的電路示意圖。 圖2為依據本發明第一實施例的畫素電路在單一畫面期間中的驅動波形示意圖。 圖3為依據本發明第二實施例的畫素電路的電路示意圖。 圖4為依據本發明第三實施例的畫素電路的電路示意圖。 圖5為依據本發明第四實施例的畫素電路的電路示意圖。 圖6為依據本發明第四實施例的畫素電路在單一畫面期間中的驅動波形示意圖。 FIG. 1 is a schematic circuit diagram of a pixel circuit according to the first embodiment of the present invention. FIG. 2 is a schematic diagram of the driving waveform of the pixel circuit during a single picture period according to the first embodiment of the present invention. FIG. 3 is a schematic circuit diagram of a pixel circuit according to a second embodiment of the present invention. FIG. 4 is a schematic circuit diagram of a pixel circuit according to a third embodiment of the present invention. FIG. 5 is a schematic circuit diagram of a pixel circuit according to a fourth embodiment of the present invention. FIG. 6 is a schematic diagram of the driving waveform of the pixel circuit during a single picture period according to the fourth embodiment of the present invention.

100:畫素電路 100: Pixel circuit

110:電流控制區塊 110:Current control block

120:脈寬控制區塊 120: Pulse width control block

130:發光驅動區塊 130: Luminous drive block

C1:第一電容 C1: first capacitor

C2:第二電容 C2: Second capacitor

DataG:灰階資料電壓 DataG: Grayscale data voltage

DataI:電流資料電壓 DataI: current data voltage

DEL1:發光二極體 DEL1: LED

EM:發射控制信號 EM: transmit control signal

Idrv:驅動電流 Idrv: driving current

PW:脈寬信號 PW: pulse width signal

S1:第一控制信號 S1: First control signal

S2:第二控制信號 S2: Second control signal

S3:第三控制信號 S3: The third control signal

S4:第四控制信號 S4: Fourth control signal

Sweep:擺盪信號 Sweep: Swing signal

Sweep:擺盪信號 Sweep: swing signal

T1:第一電晶體 T1: First transistor

T10:第十電晶體 T10: The tenth transistor

T11:第十一電晶體 T11: Eleventh transistor

T12:第十二電晶體 T12: Twelfth transistor

T13:第十三電晶體 T13: Thirteenth transistor

T2:第二電晶體 T2: Second transistor

T3:第三電晶體 T3: The third transistor

T4:第四電晶體 T4: The fourth transistor

T5:第五電晶體 T5: The fifth transistor

T6:第六電晶體 T6: The sixth transistor

T7:第七電晶體 T7: The seventh transistor

T8:第八電晶體 T8: The eighth transistor

T9:第九電晶體 T9: Ninth transistor

VDD:系統高電壓 VDD: system high voltage

Vref1:第一參考電壓 Vref1: first reference voltage

Vref2:第二參考電壓 Vref2: Second reference voltage

VSS:系統低電壓 VSS: System low voltage

Claims (18)

一種畫素電路,包括: 一發光二極體,具有一陽極及接收一系統低電壓的一陰極; 一電流控制區塊,接收一電流資料電壓及一系統高電壓,以基於該電流資料電壓提供一驅動電流; 一脈寬控制區塊,接收一灰階資料電壓及一擺盪信號,以基於該灰階資料電壓提供一脈寬信號; 一發光驅動區塊,耦接該電流控制區塊、該脈寬控制區塊及該發光二極體的該陽極,並且接收該驅動電流及該脈寬信號,以基於該脈寬信號將該驅動電流提供至該發光二極體的該陽極。 A pixel circuit includes: a light-emitting diode having an anode and a cathode receiving a system low voltage; a current control block receiving a current data voltage and a system high voltage to provide a driving current based on the current data voltage; a pulse width control block receiving a grayscale data voltage and a swing signal to provide a pulse width signal based on the grayscale data voltage; A light-emitting driving block is coupled to the current control block, the pulse width control block and the anode of the light-emitting diode, and receives the driving current and the pulse width signal to provide the driving current to the anode of the light-emitting diode based on the pulse width signal. 如請求項1所述的畫素電路,其中該電流控制區塊包括: 一第一電晶體,具有接收該系統高電壓的一第一端、一控制端、以及提供該驅動電流的一第二端; 一第二電晶體,具有一第一端、接收第一控制信號的一控制端、以及接收一第一參考電壓的一第二端; 一第三電晶體,具有一第一端、接收第二控制信號的一控制端、以及一第二端; 一第一電容,耦接於該第一電晶體的該控制端與該第三電晶體的該第二端之間; 一第四電晶體,具有耦接該第三電晶體的該第二端的一第一端、接收一發射控制信號的一控制端、以及一第二端;以及 一第五電晶體,具有耦接該第一電晶體的該第二端的一第一端、接收一第三控制信號的一控制端、以及耦收該第二電晶體的該第一端的一第二端。 The pixel circuit of claim 1, wherein the current control block includes: A first transistor having a first terminal for receiving the high voltage of the system, a control terminal, and a second terminal for providing the driving current; a second transistor having a first terminal, a control terminal receiving a first control signal, and a second terminal receiving a first reference voltage; a third transistor having a first terminal, a control terminal receiving the second control signal, and a second terminal; a first capacitor coupled between the control terminal of the first transistor and the second terminal of the third transistor; a fourth transistor having a first terminal coupled to the second terminal of the third transistor, a control terminal receiving a transmission control signal, and a second terminal; and A fifth transistor has a first terminal coupled to the second terminal of the first transistor, a control terminal receiving a third control signal, and a first terminal coupled to the second transistor. Second end. 如請求項2所述的畫素電路,其中該電流控制區塊更包括: 一第六電晶體,具有耦接該第一電晶體的該控制端的一第一端、接收一第二控制信號的一控制端、以及耦收該第二電晶體的該第一端的一第二端。 The pixel circuit as described in claim 2, wherein the current control block further includes: A sixth transistor having a first end coupled to the control end of the first transistor, a control end receiving a second control signal, and a second end coupled to the first end of the second transistor. 如請求項2所述的畫素電路,其中該第三電晶體的該第一端接收該電流資料電壓,並且該第四電晶體的該第二端接收一第二參考電壓。The pixel circuit of claim 2, wherein the first terminal of the third transistor receives the current data voltage, and the second terminal of the fourth transistor receives a second reference voltage. 如請求項2所述的畫素電路,其中該第三電晶體的該第一端接收該擺盪信號,並且該第四電晶體的該第二端接收該電流資料電壓。The pixel circuit of claim 2, wherein the first terminal of the third transistor receives the swing signal, and the second terminal of the fourth transistor receives the current data voltage. 如請求項2所述的畫素電路,其中該第三電晶體的該第一端接收一第二參考電壓,並且該第四電晶體的該第二端接收該電流資料電壓。A pixel circuit as described in claim 2, wherein the first end of the third transistor receives a second reference voltage, and the second end of the fourth transistor receives the current data voltage. 如請求項2所述的畫素電路,其中該第三控制信號相同於該第二控制信號。The pixel circuit of claim 2, wherein the third control signal is the same as the second control signal. 如請求項1所述的畫素電路,其中該脈寬控制區塊包括: 一第七電晶體,具有接收一第一參考電壓的一第一端、接收一第一控制信號的一控制端、以及一第二端; 一第八電晶體,具有接收該灰階資料電壓的一第一端、接收一第二控制信號的一控制端、以及一第二端; 一第九電晶體,具有耦接該第八電晶體的該第二端的一第一端、接收一發射控制信號的一控制端、以及接收該擺盪信號的一第二端; 一第二電容,耦接於該第七電晶體的該第二端及第六電晶體的該第二端之間; 一第十電晶體,具有耦接該第七電晶體的該第二端的一第一端、接收一第三控制信號的一控制端、以及提供該脈寬信號的一第二端;以及 一第十一電晶體,具有耦接該第十電晶體的該第二端的一第一端、耦接該第七電晶體的該第二端的一控制端、以及一第二端。 The pixel circuit of claim 1, wherein the pulse width control block includes: a seventh transistor having a first terminal that receives a first reference voltage, a control terminal that receives a first control signal, and a second terminal; An eighth transistor has a first terminal that receives the gray-scale data voltage, a control terminal that receives a second control signal, and a second terminal; a ninth transistor having a first terminal coupled to the second terminal of the eighth transistor, a control terminal receiving a transmission control signal, and a second terminal receiving the swing signal; a second capacitor coupled between the second terminal of the seventh transistor and the second terminal of the sixth transistor; a tenth transistor having a first terminal coupled to the second terminal of the seventh transistor, a control terminal receiving a third control signal, and a second terminal providing the pulse width signal; and An eleventh transistor has a first terminal coupled to the second terminal of the tenth transistor, a control terminal coupled to the second terminal of the seventh transistor, and a second terminal. 如請求項8所述的畫素電路,其中該脈寬控制區塊更包括: 一第三電容,耦接於該第七電晶體的該第一端與該第七電晶體的該第二端之間。 The pixel circuit of claim 8, wherein the pulse width control block further includes: A third capacitor is coupled between the first terminal of the seventh transistor and the second terminal of the seventh transistor. 如請求項8所述的畫素電路,其中該第三控制信號相同於該第二控制信號。The pixel circuit of claim 8, wherein the third control signal is the same as the second control signal. 如請求項8所述的畫素電路,其中該第十一電晶體的該第二端接收一第四控制信號。The pixel circuit of claim 8, wherein the second terminal of the eleventh transistor receives a fourth control signal. 如請求項8所述的畫素電路,其中該第十一電晶體的該第二端接收一第二參考電壓。The pixel circuit of claim 8, wherein the second terminal of the eleventh transistor receives a second reference voltage. 如請求項1所述的畫素電路,其中該發光驅動區塊包括: 一第十二電晶體,具有接收該驅動電流的一第一端、接收該脈寬信號的一控制端、以及耦接該發光二極體的該陽極的一第二端;以及 一第十三電晶體,具有接收一第一參考電壓的一第一端、接收一第四控制信號的一控制端、以及耦接該第十二電晶體的該控制端的一第二端。 The pixel circuit of claim 1, wherein the light-emitting driving block includes: a twelfth transistor having a first terminal for receiving the drive current, a control terminal for receiving the pulse width signal, and a second terminal coupled to the anode of the light-emitting diode; and A thirteenth transistor has a first terminal receiving a first reference voltage, a control terminal receiving a fourth control signal, and a second terminal coupled to the control terminal of the twelfth transistor. 如請求項13所述的畫素電路,其中該發光驅動區塊更包括: 一第十四電晶體,具有耦接該第十二電晶體的該第二端的一第一端、接收一脈寬發射信號的一控制端、以及耦接該發光二極體的該陽極的一第二端。 The pixel circuit of claim 13, wherein the light-emitting driving block further includes: A fourteenth transistor having a first terminal coupled to the second terminal of the twelfth transistor, a control terminal receiving a pulse width emission signal, and a first terminal coupled to the anode of the light emitting diode. Second end. 如請求項13所述的畫素電路,其中該第十二電晶體及該第十三電晶體於單一畫面期間中多次開關。The pixel circuit of claim 13, wherein the twelfth transistor and the thirteenth transistor are switched multiple times during a single picture period. 如請求項13所述的畫素電路,其中該第十二電晶體及該第十三電晶體於多個畫面期間中多次開關。A pixel circuit as described in claim 13, wherein the twelfth transistor and the thirteenth transistor are switched multiple times during multiple frame periods. 如請求項1所述的畫素電路,其中對於同一灰階值,該電流資料電壓應用於具有不同發光色彩的該發光二極體的狀態下具有不同的電壓準位。A pixel circuit as described in claim 1, wherein for the same grayscale value, the current data voltage has different voltage levels when applied to the states of the light-emitting diodes with different luminous colors. 如請求項1所述的畫素電路,其中該發光二極體包括一微型發光二極體。The pixel circuit of claim 1, wherein the light-emitting diode includes a micro light-emitting diode.
TW111131314A 2022-08-19 2022-08-19 Pixel circuit TWI816519B (en)

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