TW202410196A - Substrate processing device and substrate processing method - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. More specifically, the present invention relates to a substrate processing apparatus and a substrate processing method that can circulate gas supplied to a chamber to reduce gas usage and adjust humidity inside the chamber. The substrate processing device includes: a chamber that provides a processing space for the substrate; a fan filter unit that is installed in the chamber; a first supply line that supplies gas toward the chamber and is provided with a first opening and closing portion; one or more An exhaust line that discharges the gas inside the chamber; a loop line that connects the exhaust line and the first supply line and is provided with a second opening and closing portion; and an exhaust line that connects the exhaust line The gas is discharged to the outside of the chamber, and a third opening and closing part is provided.

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method. More specifically, the present invention relates to a substrate processing apparatus and a substrate processing method that can circulate gas supplied to a chamber to reduce gas usage and adjust humidity inside the chamber.

Generally, a pattern corresponding to the circuit elements of an integrated circuit formed on a semiconductor manufacturing wafer is realized by a photolithography process. This photoetching process includes: a coating process, in which photoresist is coated to form a photoresist (PR) layer on the wafer; a photolithography process, in which the photoresist layer coated on the wafer is formed by A mask of the circuit pattern is exposed to develop the circuit pattern; and an etching process is used to etch the photoresist pattern through a dry or wet method to form the desired pattern on the semiconductor wafer.

In this case, in order to apply a photosensitive liquid or a developer to a semiconductor manufacturing wafer, centrifugal force is usually used to evenly apply the photosensitive liquid or developer (hereinafter referred to as "chemical liquid") to the surface of the wafer. Front coating device. That is, if a certain amount of chemical solution is dropped on a semiconductor manufacturing wafer and the rotation unit on which the wafer is placed is rotated at high speed, the chemical solution will be uniformly coated on the wafer with a certain thickness due to centrifugal force.

In this case, in order to adjust the humidity inside the chamber, clean dry air (CDA) or nitrogen (N2) is supplied to the inside of the chamber. In the case of conventional processing equipment, clean dry air (CDA) or nitrogen (N2) is supplied to the inside of the chamber and immediately exhausted, so that a large amount of clean dry air or nitrogen is used according to the process, which becomes a factor of increasing costs.

In order to solve the above problems, the object of the present invention is to provide a method that can circulate gas such as clean dry air (CDA, Clean Dry Air) or nitrogen (N2) supplied to the chamber and reduce the usage of gas. A substrate processing device and a substrate processing method that adjust the humidity inside the chamber.

The object of the present invention as described above is achieved by the following substrate processing device, which comprises: a chamber, which provides a processing space for a substrate; a fan filter unit (FFU) disposed in the chamber; a first supply line, which supplies gas to the chamber and is provided with a first opening and closing part; one or more exhaust lines, which exhaust the gas inside the chamber; a loop line, which connects the exhaust line and the first supply line and is provided with a second opening and closing part; and an exhaust line, which exhausts the gas of the exhaust line to the outside of the chamber and is provided with a third opening and closing part.

Here, the substrate processing apparatus may further include a fluid tank connected to an end of the exhaust line and connected to the loop line and the exhaust line.

Furthermore, the substrate processing apparatus may include: a sensing unit for sensing environmental conditions including humidity, temperature and pressure inside the chamber or the exhaust line.

In this case, any one or more of the first opening and closing portion, the second opening and closing portion, and the third opening and closing portion may be driven according to the environmental conditions.

In addition, the substrate processing apparatus may further include at least one of a loop fan and a loop screening program in the loop line.

On the other hand, when the humidity inside the chamber or the exhaust line is above a predetermined critical value, that is, in the first mode, the first opening and closing part and the third opening and closing part may be opened. part, and locks the second opening and closing part of the loop line. When the humidity inside the chamber or the exhaust line is below a predetermined critical value, that is, in the second mode, the second opening and closing part of the loop line is blocked. The first opening and closing part and the third opening and closing part are opened and the second opening and closing part of the loop line is opened, and the first opening and closing part is closed in the exhaust mode when the process of the substrate is completed. and the second opening and closing part, and open the third opening and closing part.

In addition, the substrate processing apparatus may further include: a second supply line that supplies clean dry air (CDA, Clean Dry Air) to the fan filter unit; and a fourth opening and closing part provided on the second supply line. .

In this case, it may be that in the first mode, the fourth opening and closing part is opened, in the second mode, the fourth opening and closing part is opened or locked, and in the exhaust mode , the fourth opening and closing part is locked.

On the other hand, the substrate processing apparatus may further include: a rotating unit for supporting and rotating the substrate inside the chamber; and a chemical liquid supplying device for supplying chemical liquid to the substrate.

On the other hand, the object of the present invention as described above is achieved by the following substrate processing method, a substrate processing method of a substrate processing device, wherein the substrate processing device comprises: a first supply line, which supplies gas toward a chamber and is provided with a first opening and closing portion; a loop line, which connects an exhaust line of the chamber and the first supply line and is provided with a second opening and closing portion; and an exhaust line, which exhausts the gas of the exhaust line to the outside of the chamber and is provided with a third opening and closing portion, wherein the humidity inside the chamber or the exhaust line is predetermined. When the humidity inside the chamber or the exhaust line is below a predetermined critical value, that is, in the first mode, the first opening and closing part and the third opening and closing part are opened, and the second opening and closing part of the loop line is closed. When the humidity inside the chamber or the exhaust line is below a predetermined critical value, that is, in the second mode, the first opening and closing part and the third opening and closing part are closed, and the second opening and closing part of the loop line is opened. In the exhaust mode for completing the process of the substrate, the first opening and closing part and the second opening and closing part are closed, and the third opening and closing part is opened.

Here, the substrate processing device may further include: a fan filter unit (FFU: Fan Filter Unit) disposed in the chamber; and a second supply line that supplies clean dry air (CDA, Clean Dry Air); and a fourth opening and closing part provided on the second supply line.

In this case, it may be that in the first mode, the fourth opening and closing part is opened, in the second mode, the fourth opening and closing part is opened or locked, and in the exhaust mode , the fourth opening and closing part is locked.

According to the present invention having the foregoing structure, gas such as clean dry air (CDA, Clean Dry Air) or nitrogen (N2) supplied to the chamber is circulated to reduce the amount of gas used, thereby saving costs and further adjusting the The humidity inside the chamber creates an environment inside the chamber that is conducive to the process, thereby improving the quality of substrate processing.

Hereinafter, the structure and operation of the substrate processing apparatus according to the embodiment of the present invention will be observed in detail with reference to the accompanying drawings.

FIG. 1 is a schematic diagram of the structure of a substrate processing apparatus 1000 according to an embodiment of the present invention.

Referring to FIG. 1 , the substrate processing apparatus 1000 may include a chamber 100 that provides a processing space 110 for the substrate 10 . The substrate 10 can be accommodated inside the chamber 100 to perform various processing processes.

For example, a rotation unit 120 for placing the substrate 10 and rotating the substrate 10 may be provided inside the chamber 100 .

The substrate 10 is placed above the rotating unit 120. When the rotating unit 120 rotates to rotate the substrate 10, when the drug solution drops onto the substrate 10, the drug solution can be evenly diffused onto the substrate 10 by centrifugal force.

In addition, a chemical solution supply device 140 for supplying chemical solution to the upper surface of the substrate 10 may be provided inside the chamber 100 .

The chemical solution supply device 140 may include a nozzle 142 for supplying chemical solution toward the substrate 10 , a nozzle arm 144 extending from the nozzle 142 , a main body 146 connected to the nozzle arm 144 , and a driving unit 148 for rotating and moving the main body 146 up and down.

Specifically, the chemical solution supply device 140 is disposed inside the chamber 100 to drop the chemical solution onto the substrate 10 .

The nozzle arm 144 may extend above the substrate 10, and the nozzle 142 may be disposed at one end of the nozzle arm 144. The nozzle arm 144 and the nozzle 142 may be configured to be rotatable and move up and down by the driving part 148.

That is, the nozzle 142 and the nozzle arm 144 are located at the edge of the chamber 100 instead of above the substrate 10 or the rotating unit 120 during normal times or process preparation.

In this state, when the substrate 10 is placed on the rotating unit 120 and chemical liquid supply is required, the nozzle 142 and the nozzle arm 144 can rotate and the nozzle 142 is located at the center of the substrate 10 Drop the liquid medicine from above. In addition, the nozzle 142 and the nozzle arm 144 can move up and down to adjust the height between the nozzle 142 and the substrate 10 .

On the other hand, although the nozzle 142 and the nozzle arm 144 are shown as one in FIG. 1 , this is just an example, and they may be configured as two or more.

The other end of the nozzle arm 144 is connected to the main body 146. The main body 146 is connected to the driving part 148 and is driven by the driving part 148 to rotate and move up and down.

In addition, although not shown, a chemical liquid supply line for supplying chemical liquid may be connected to the main body 146. The chemical liquid supplied through the chemical liquid supply line may be supplied to the substrate 10 through the nozzle arm 144 and the nozzle 142.

On the other hand, the chamber 100 may include a fan filter unit (FFU) 160 . The fan filter unit 160 may generate a flow of fluid inside the chamber 100 toward an exhaust line 230 described later, thereby exhausting foreign matter including particles inside the chamber 100 through the exhaust line 230 .

The fan filter unit 160 may be disposed at the upper portion or the side of the chamber 100 . For example, the fan filter unit 160 may be disposed at the upper portion of the chamber 100 , and the exhaust line 230 may be connected to the lower portion of the chamber 100 .

Therefore, the fan filter unit 160 can generate a strong downward airflow inside the chamber 100 , and foreign matter and the like inside the chamber 100 move toward the lower part of the chamber 100 through this downward airflow and pass through the chamber 100 . The exhaust line 230 discharges.

In addition, a first supply line 210 for supplying gas may be connected to the chamber 100 . The first supply line 210 may supply gas such as Clean Dry Air (CDA) or nitrogen (N2) to adjust the humidity inside the chamber 100 . In this case, a first opening and closing portion 212 is provided in the first supply line 210 to adjust the supply of gas through the first supply line 210 . This first opening and closing part 212 may be configured by a valve, an auto damper, or the like.

On the other hand, the substrate processing apparatus 1000 may further include a second supply line 290 that supplies clean dry air (CDA) to the fan filter unit 160 .

That is, a second supply line 290 different from the aforementioned first supply line 210 may be further provided. For example, nitrogen gas (N2) is supplied through the first supply line 210 and CDA is supplied through the second supply line 290 . In this case, a fourth opening and closing portion 292 may be provided on the second supply line 290 to adjust the supply of CDA through the second supply line 290 .

By providing the second supply line 290 for supplying clean dry air separately from the aforementioned first supply line 210, gas can be supplied more efficiently.

On the other hand, at least one exhaust line 230 for exhausting gas inside the chamber 100 may be connected to the chamber 100 . When the exhaust lines 230 are configured in plurality, they may be symmetrically connected to the lower part of the chamber 100 . When a plurality of exhaust lines 230 are configured, the gas inside the chamber 100 can be exhausted in a short time.

The exhaust line 230 may be connected to the loop line 270 and the exhaust line 250. Here, the loop line 270 connects the exhaust line 230 and the first supply line 210, thereby playing a role of circulating the gas exhausted from the inside of the chamber 100 back into the inside of the chamber 100. The loop line 270 may be provided with a second opening and closing part 272 for adjusting the flow of the gas.

In addition, the exhaust line 250 can discharge the gas of the exhaust line 230 to the outside of the chamber 100 , and is provided with a third opening and closing portion 252 .

In this case, a fluid tank 240 connected to the end of the exhaust line 230 and connected to the loop line 270 and the exhaust line 250 may be further provided.

As mentioned above, when the exhaust line 230 is configured as a plurality, the structure connecting the plurality of exhaust lines 230 to the loop line 270 and the exhaust line 250 may become complicated.

In the present invention, a fluid box 240 is provided at the end of the exhaust line 230 and the fluid box 240 is connected to the loop line 270 and the exhaust line 250 respectively, thereby simplifying the structure.

Therefore, one end of the loop wire 270 may be connected to the fluid tank 240 , and the other end of the loop wire 270 may be connected to the first supply line 210 .

In addition, an exhaust pump (not shown) may be provided in the exhaust line 230, and the exhaust pump may also be provided in the fluid tank 240. By driving the exhaust pump, the gas may be discharged more smoothly through the exhaust line 230.

On the other hand, the other end of the loop wire 270 may be connected to the first supply line 210 between the first opening and closing part 212 and the chamber 100 . That is, when considering the flow direction of the gas of the first supply line 210 , the other end of the loop line 270 may be in contact with the first supply line 210 at the rear end of the first opening and closing part 212 connection.

Because only when the other end of the loop line 270 is connected to the first supply line 210 between the first opening and closing portion 212 and the chamber 100, a flow path for circulating the gas exhausted from the chamber 100 can be formed.

On the other hand, the substrate processing apparatus 1000 may include a sensor 180 in the chamber 100 or the exhaust line 230 , and the sensor 180 senses environmental conditions including humidity, temperature, and pressure inside the chamber 100 or the exhaust line 230 .

Environmental conditions including humidity, temperature, and pressure can be sensed through the sensing part 180 , and the operating mode of the substrate processing apparatus 1000 can be selected through the control part 300 .

For example, the control part 300 may be in a first mode of supplying and discharging gas into the inside of the chamber 100 , a second mode of circulating the gas inside the chamber 100 , and the process for the substrate 10 ending. The substrate processing apparatus 1000 is driven in one of the exhaust modes. That is, the control part 300 may drive any one or more of the first opening and closing part 212 , the second opening and closing part 272 , and the third opening and closing part 252 according to the environmental conditions.

On the other hand, when the humidity inside the chamber 100 or the exhaust line 230 is above a critical value, if driven in the loop mode, that is, the second mode, the fan filter unit 160 may malfunction or be damaged. wait.

Therefore, in order to prevent this situation, the environmental conditions including humidity can be sensed by the sensing unit 180 and an appropriate operation mode can be selected for driving.

Hereinafter, a specific observation will be made on the substrate processing method of the substrate processing apparatus 1000 having the above-described structure.

First, in the process of supplying the chemical solution toward the substrate 10 through the chemical solution supply device 140 , the humidity inside the chamber 100 needs to be adjusted.

In this case, as shown in FIG. 2 , the control part 300 may drive the substrate processing apparatus 1000 in a first mode in which gas is supplied and discharged into the chamber 100 .

In the first mode, it corresponds to a situation where the humidity inside the chamber 100 or the exhaust line 230 is above a predetermined critical value.

In this first mode, the control part 300 may sense the environmental conditions including humidity, temperature and pressure inside the chamber 100 or the exhaust line 230 through the sensing part 180, thereby acting as When it exceeds a predetermined threshold value, the first opening and closing part 212 and the third opening and closing part 252 are opened, and the second opening and closing part 272 is closed. In addition, the control part 300 may open the fourth opening and closing part 292 of the second supply line 290 to supply CDA to the chamber 100 .

In FIGS. 2 to 4 , the flow path shown with a dotted line means a flow path in which gas does not flow, and the flow path shown with a solid line means a flow path in which gas flows.

Therefore, gas does not flow to the loop line 270 , and the gas supplied to the chamber 100 through the first supply line 210 or the second supply line 290 can be discharged through the exhaust line 230 and the exhaust line 250 . In this case, the gas can be exhausted by driving the exhaust pump of the exhaust line 230 .

The control unit 300 can continuously or intermittently sense the environmental condition (e.g., humidity) through the sensing unit 180, and when the humidity inside the chamber 100 or the exhaust line 230 is below a predetermined critical value, the substrate processing apparatus 1000 is driven in a second mode of circulating the gas inside the chamber 100.

In the second mode, as shown in FIG. 3 , the control unit 300 may close the first opening/closing unit 212 and the third opening/closing unit 252 , and open the second opening/closing unit 272 of the loop cable 270 .

In the second mode, gas is not supplied to the chamber 100 through the first supply line 210 , and gas is not discharged through the exhaust line 250 . That is, the loop line 270 is turned on, and the gas inside the chamber 100 is looped to the chamber 100 via the exhaust line 230 , the loop line 270 and a part of the first supply line 210 .

In this case, the gas can be circulated by driving the exhaust pump of the exhaust line 230.

On the other hand, in the second mode, the control part 300 opens the fourth opening and closing part 292 of the second supply line 290 to supply CDA to the chamber 100, or closes the fourth opening and closing part 292 292 and block the supply of CDA.

In addition, the fan filter unit 160 of the chamber 100 can also be driven in the aforementioned first mode and the second mode, so that the gas circulation inside the chamber 100 can be smoothed.

On the other hand, when the process for the substrate 10 is completed, the control part 300 may drive the substrate processing apparatus 1000 in an exhaust mode for exhausting gas inside the chamber 100 .

In the exhaust mode, as shown in FIG. 4 , the control part 300 may close the first opening and closing part 212 and the second opening and closing part 272 , and open the third opening and closing part 252 . In addition, the fourth opening and closing portion 292 of the second supply line 290 may be closed.

In this state, if the exhaust pump of the exhaust line 230 is driven, the residual gas inside the chamber 100 can be exhausted through the exhaust line 230 and the exhaust line 250.

In addition, in the exhaust mode, not only the gas inside the chamber 100 but also the gas remaining in the first supply line 210, the loop line 270 and the second supply line 290 can be exhausted together.

That is, if the exhaust pump of the exhaust line 230 is driven, the gas remaining in the first supply line 210 and the second supply line 290 can be exhausted through the chamber 100 through the exhaust line 230 and the exhaust line 250 .

Likewise, gas remaining in a portion of the loop line 270 may be exhausted through the first supply line 210 and the chamber 100 through the exhaust line 230 and the exhaust line 250 .

Through the exhaust mode, not only the chamber 100 but also the gas remaining in the first supply line 210 , the second supply line 290 and the loop line 270 can be completely exhausted.

On the other hand, FIG. 5 is a schematic diagram showing the structure of a substrate processing apparatus 1000' according to another embodiment of the present invention.

Referring to FIG. 5 , the substrate processing apparatus 1000 ′ according to this embodiment may be provided with at least one of a circulation fan 274 and a circulation screening program 276 in the circulation line 270 . In FIG. 5 , for convenience of explanation, the entire loop fan 274 and loop screening program 276 are shown.

In this way, if the loop fan 274 and the loop screening program 276 are provided in the loop line 270, when the gas loops through the loop line 270, the gas can be driven by the loop fan 274. cycle in a shorter time.

Further, as mentioned above, when gas such as clean dry air (CDA, Clean Dry Air) or nitrogen (N2) inside the chamber 100 circulates through the loop line 270, when the clean dry air ( CDA (Clean Dry Air) or nitrogen (N2) may contain chemical foreign matter, such as O3, NH3, H2O2, NH4OH, HF, solvent (Solvent), etc. In this case, through the loop screening program 276, the aforementioned foreign matter and the like of the gas looping along the loop line 270 can be removed to prevent damage or breakage of the fan filter unit 160, further minimizing Eliminate contamination of the substrate 10 inside the chamber 100 .

Although the present invention has been described above with reference to the preferred embodiments, those skilled in the art can make various modifications and changes to the present invention without departing from the spirit and scope of the invention described in the appended claims. . Therefore, if the modified implementation basically includes the constituent elements of the patentable scope of the present invention, they should be deemed to be included in the technical scope of the present invention.

10: Substrate 100: Chamber 110: Processing space 120: Rotating unit 140: Liquid supply device 160: Fan filter unit 180: Sensing unit 210: First supply line 212: First opening and closing unit 230: Exhaust line 240: Fluid box 250: Exhaust line 252: Third opening and closing unit 270: Loop line 272: Second opening and closing unit 290: Second supply line 292: Fourth opening and closing unit 300: Control unit 1000: Substrate processing device

[FIG. 1] is a schematic diagram showing the structure of a substrate processing apparatus according to an embodiment of the present invention; [FIG. 2] is a diagram showing the flow of gas according to a first mode in a substrate processing apparatus according to an embodiment of the present invention; [FIG. 3] is a diagram showing the flow of gas according to a second mode in a substrate processing apparatus according to an embodiment of the present invention; [FIG. 4] is a diagram showing the flow of gas according to an exhaust mode in a substrate processing apparatus according to an embodiment of the present invention; [FIG. 5] is a schematic diagram showing the structure of a substrate processing apparatus according to another embodiment of the present invention.

10:Substrate

100: Chamber

110: Processing space

120: Rotation unit

140: Liquid medicine supply device

160:Fan filter unit

180:Sensing unit

210:First supply line

212: First opening and closing part

230:Exhaust line

240: Fluid box

250: Discharge line

252: The third opening and closing part

270:Loop line

272: Second opening and closing part

290: Second supply line

292: The fourth opening and closing part

300:Control Department

1000: Substrate processing device

Claims (12)

A substrate processing device, comprising: a chamber providing a processing space for a substrate; a fan filter unit disposed in the chamber; a first supply line supplying gas to the chamber and provided with a first opening and closing portion; one or more exhaust lines exhausting gas from the chamber; a loop line connecting the exhaust line and the first supply line and provided with a second opening and closing portion; and an exhaust line exhausting gas from the exhaust line to the outside of the chamber and provided with a third opening and closing portion. The substrate processing apparatus according to claim 1, further comprising: a fluid tank connected to an end of the exhaust line and connected to the loop line and the exhaust line. The substrate processing apparatus according to claim 1, further comprising: a sensing unit that senses environmental conditions including humidity, temperature, and pressure inside the chamber or the exhaust line. The substrate processing apparatus according to claim 3, wherein at least one of the first opening and closing part, the second opening and closing part, and the third opening and closing part is driven according to the environmental condition. A substrate processing device as described in claim 1, wherein the substrate processing device further includes at least one of a loop fan and a loop screening program on the loop line. The substrate processing apparatus according to claim 4, wherein the first opening and closing part is opened when the humidity inside the chamber or the exhaust line is above a predetermined threshold value, that is, in the first mode. and the third opening and closing part, and locks the second opening and closing part of the loop wire, When the humidity inside the chamber or the exhaust line is below a predetermined critical value, that is, in the second mode, the first opening and closing part and the third opening and closing part are locked, and the return valve is opened. the second opening and closing portion of the coil, In the exhaust mode in which the process of the substrate is completed, the first opening and closing part and the second opening and closing part are closed, and the third opening and closing part is opened. The substrate processing device according to claim 6, wherein the substrate processing device further includes: a second supply line that supplies clean, dry air to the fan filter unit; and The fourth opening and closing part is provided on the second supply line. The substrate processing apparatus according to claim 7, wherein in the first mode, the fourth opening and closing part is opened, In the second mode, the fourth opening and closing part is opened or locked, In the exhaust mode, the fourth opening and closing portion is closed. The substrate processing device according to claim 1, wherein the substrate processing device further includes: a rotation unit that supports and rotates the substrate inside the chamber; and A chemical liquid supply device supplies chemical liquid to the substrate. A substrate processing method of a substrate processing device, wherein the substrate processing device is provided with: a first supply line that supplies gas to the chamber and is provided with a first opening and closing portion; a loop line that is connected to an exhaust line of the chamber and the first supply line, and is provided with a second opening and closing part; and a discharge line, which discharges gas from the exhaust line to the outside of the chamber, and is provided with a third opening and closing part, When the humidity inside the chamber or the exhaust line is above a predetermined critical value, that is, in the first mode, the first opening and closing part and the third opening and closing part are opened, and the return is locked. the second opening and closing portion of the coil, When the humidity inside the chamber or the exhaust line is below a predetermined critical value, that is, in the second mode, the first opening and closing part and the third opening and closing part are locked, and the return valve is opened. the second opening and closing portion of the coil, In the exhaust mode in which the process of the substrate is completed, the first opening and closing part and the second opening and closing part are closed, and the third opening and closing part is opened. The substrate processing method according to claim 10, wherein the substrate processing device further includes: A fan filter unit is provided in the chamber; a second supply line that supplies clean, dry air to the fan filter unit; and The fourth opening and closing part is provided on the second supply line. A substrate processing method as described in claim 11, wherein, in the first mode, the fourth opening and closing portion is opened, In the second mode, the fourth opening and closing portion is opened or closed, In the exhaust mode, the fourth opening and closing portion is closed.

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