TW202409351A - Stable alkaline electroplating bath with a diacid - Google Patents
Stable alkaline electroplating bath with a diacid Download PDFInfo
- Publication number
- TW202409351A TW202409351A TW112121841A TW112121841A TW202409351A TW 202409351 A TW202409351 A TW 202409351A TW 112121841 A TW112121841 A TW 112121841A TW 112121841 A TW112121841 A TW 112121841A TW 202409351 A TW202409351 A TW 202409351A
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- TW
- Taiwan
- Prior art keywords
- formula
- diacid
- electroplating bath
- electroplating
- salt
- Prior art date
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- 238000009713 electroplating Methods 0.000 title claims abstract description 66
- 150000003839 salts Chemical class 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 19
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 claims abstract description 18
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 239000000654 additive Substances 0.000 claims abstract description 11
- 150000004985 diamines Chemical class 0.000 claims abstract description 11
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 9
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 31
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 9
- 229910001453 nickel ion Inorganic materials 0.000 claims description 7
- 229910000000 metal hydroxide Inorganic materials 0.000 claims description 2
- 150000004692 metal hydroxides Chemical class 0.000 claims description 2
- 239000003212 astringent agent Substances 0.000 claims 1
- 239000008139 complexing agent Substances 0.000 abstract description 7
- 230000007062 hydrolysis Effects 0.000 abstract description 3
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 3
- 239000004902 Softening Agent Substances 0.000 abstract 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 39
- 239000000203 mixture Substances 0.000 description 19
- 238000007747 plating Methods 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 239000011701 zinc Substances 0.000 description 18
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 17
- -1 alkaline earth metal salts Chemical class 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 150000001412 amines Chemical class 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 9
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 229910052725 zinc Inorganic materials 0.000 description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 6
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 239000003446 ligand Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 3
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000003301 hydrolyzing effect Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 3
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 3
- 150000002825 nitriles Chemical class 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Chemical class 0.000 description 3
- 159000000000 sodium salts Chemical class 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 3
- 238000005160 1H NMR spectroscopy Methods 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- ICSNLGPSRYBMBD-UHFFFAOYSA-N 2-aminopyridine Chemical compound NC1=CC=CC=N1 ICSNLGPSRYBMBD-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PVNIIMVLHYAWGP-UHFFFAOYSA-N Niacin Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- AKRQHOWXVSDJEF-UHFFFAOYSA-N heptane-1-sulfonic acid Chemical class CCCCCCCS(O)(=O)=O AKRQHOWXVSDJEF-UHFFFAOYSA-N 0.000 description 2
- LELOWRISYMNNSU-UHFFFAOYSA-N hydrogen cyanide Chemical compound N#C LELOWRISYMNNSU-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- GPUMPJNVOBTUFM-UHFFFAOYSA-N naphthalene-1,2,3-trisulfonic acid Chemical compound C1=CC=C2C(S(O)(=O)=O)=C(S(O)(=O)=O)C(S(=O)(=O)O)=CC2=C1 GPUMPJNVOBTUFM-UHFFFAOYSA-N 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- ZRSNZINYAWTAHE-UHFFFAOYSA-N p-methoxybenzaldehyde Chemical compound COC1=CC=C(C=O)C=C1 ZRSNZINYAWTAHE-UHFFFAOYSA-N 0.000 description 2
- SATCULPHIDQDRE-UHFFFAOYSA-N piperonal Chemical compound O=CC1=CC=C2OCOC2=C1 SATCULPHIDQDRE-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 159000000001 potassium salts Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- TVDSBUOJIPERQY-UHFFFAOYSA-N prop-2-yn-1-ol Chemical compound OCC#C TVDSBUOJIPERQY-UHFFFAOYSA-N 0.000 description 2
- 229940079842 sodium cumenesulfonate Drugs 0.000 description 2
- QEKATQBVVAZOAY-UHFFFAOYSA-M sodium;4-propan-2-ylbenzenesulfonate Chemical compound [Na+].CC(C)C1=CC=C(S([O-])(=O)=O)C=C1 QEKATQBVVAZOAY-UHFFFAOYSA-M 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 239000011592 zinc chloride Substances 0.000 description 2
- 235000005074 zinc chloride Nutrition 0.000 description 2
- 229910000368 zinc sulfate Inorganic materials 0.000 description 2
- 229960001763 zinc sulfate Drugs 0.000 description 2
- 239000001211 (E)-4-phenylbut-3-en-2-one Substances 0.000 description 1
- LZTSCEYDCZBRCJ-UHFFFAOYSA-N 1,2-dihydro-1,2,4-triazol-3-one Chemical compound OC=1N=CNN=1 LZTSCEYDCZBRCJ-UHFFFAOYSA-N 0.000 description 1
- FCQPNTOQFPJCMF-UHFFFAOYSA-N 1,3-bis[3-(dimethylamino)propyl]urea Chemical compound CN(C)CCCNC(=O)NCCCN(C)C FCQPNTOQFPJCMF-UHFFFAOYSA-N 0.000 description 1
- YHRUOJUYPBUZOS-UHFFFAOYSA-N 1,3-dichloropropane Chemical compound ClCCCCl YHRUOJUYPBUZOS-UHFFFAOYSA-N 0.000 description 1
- VSRWCQJUAYPITR-UHFFFAOYSA-N 1-benzylpyridin-1-ium-3-carboxylic acid;chloride Chemical compound [Cl-].OC(=O)C1=CC=C[N+](CC=2C=CC=CC=2)=C1 VSRWCQJUAYPITR-UHFFFAOYSA-N 0.000 description 1
- SQAINHDHICKHLX-UHFFFAOYSA-N 1-naphthaldehyde Chemical compound C1=CC=C2C(C=O)=CC=CC2=C1 SQAINHDHICKHLX-UHFFFAOYSA-N 0.000 description 1
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- QUYPSOKUBYENRV-UHFFFAOYSA-N 1h-pyrazole;pyridine Chemical compound C=1C=NNC=1.C1=CC=NC=C1 QUYPSOKUBYENRV-UHFFFAOYSA-N 0.000 description 1
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 description 1
- GHKSKVKCKMGRDU-UHFFFAOYSA-N 2-(3-aminopropylamino)ethanol Chemical compound NCCCNCCO GHKSKVKCKMGRDU-UHFFFAOYSA-N 0.000 description 1
- OZDGMOYKSFPLSE-UHFFFAOYSA-N 2-Methylaziridine Chemical compound CC1CN1 OZDGMOYKSFPLSE-UHFFFAOYSA-N 0.000 description 1
- SHHKMWMIKILKQW-UHFFFAOYSA-N 2-formylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1C=O SHHKMWMIKILKQW-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- 229940080296 2-naphthalenesulfonate Drugs 0.000 description 1
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical class C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 1
- FPMXPTIRDWHULR-UHFFFAOYSA-N 2-pyridin-1-ium-1-ylacetate;hydrochloride Chemical compound [Cl-].OC(=O)C[N+]1=CC=CC=C1 FPMXPTIRDWHULR-UHFFFAOYSA-N 0.000 description 1
- QPVYSIXKPUDBJG-UHFFFAOYSA-N 3,3-dihydroxypropane-1-sulfonic acid Chemical class OC(O)CCS(O)(=O)=O QPVYSIXKPUDBJG-UHFFFAOYSA-N 0.000 description 1
- LMPMFQXUJXPWSL-UHFFFAOYSA-N 3-(3-sulfopropyldisulfanyl)propane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCSSCCCS(O)(=O)=O LMPMFQXUJXPWSL-UHFFFAOYSA-N 0.000 description 1
- DMNMNAYDNPXWID-UHFFFAOYSA-N 3-benzylpyridine-2-carboxylic acid Chemical compound OC(=O)C1=NC=CC=C1CC1=CC=CC=C1 DMNMNAYDNPXWID-UHFFFAOYSA-N 0.000 description 1
- JHUFGBSGINLPOW-UHFFFAOYSA-N 3-chloro-4-(trifluoromethoxy)benzoyl cyanide Chemical compound FC(F)(F)OC1=CC=C(C(=O)C#N)C=C1Cl JHUFGBSGINLPOW-UHFFFAOYSA-N 0.000 description 1
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- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
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- ABBQHOQBGMUPJH-UHFFFAOYSA-M Sodium salicylate Chemical compound [Na+].OC1=CC=CC=C1C([O-])=O ABBQHOQBGMUPJH-UHFFFAOYSA-M 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 235000009499 Vanilla fragrans Nutrition 0.000 description 1
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- 235000012036 Vanilla tahitensis Nutrition 0.000 description 1
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 1
- GWFFSJRRFHRKJX-UHFFFAOYSA-N [Na].C(=C)S(=O)(=O)C=C Chemical compound [Na].C(=C)S(=O)(=O)C=C GWFFSJRRFHRKJX-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 125000005263 alkylenediamine group Chemical group 0.000 description 1
- QPUYECUOLPXSFR-UHFFFAOYSA-N alpha-methyl-naphthalene Natural products C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- DAPUDVOJPZKTSI-UHFFFAOYSA-L ammonium nickel sulfate Chemical compound [NH4+].[NH4+].[Ni+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DAPUDVOJPZKTSI-UHFFFAOYSA-L 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical class N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- MHWVMMHIJHHXQP-UHFFFAOYSA-N benzene-1,2,3-trisulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC(S(O)(=O)=O)=C1S(O)(=O)=O MHWVMMHIJHHXQP-UHFFFAOYSA-N 0.000 description 1
- MIAUJDCQDVWHEV-UHFFFAOYSA-N benzene-1,2-disulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1S(O)(=O)=O MIAUJDCQDVWHEV-UHFFFAOYSA-N 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 150000008107 benzenesulfonic acids Chemical class 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 229950004580 benzyl nicotinate Drugs 0.000 description 1
- 229930008407 benzylideneacetone Natural products 0.000 description 1
- 229960003237 betaine Drugs 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- LXSLZSJZGMWGOL-UHFFFAOYSA-N butane-1-sulfonate;pyridin-1-ium Chemical compound C1=CC=[NH+]C=C1.CCCCS([O-])(=O)=O LXSLZSJZGMWGOL-UHFFFAOYSA-N 0.000 description 1
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 description 1
- 229910000331 cadmium sulfate Inorganic materials 0.000 description 1
- JHRWWRDRBPCWTF-OLQVQODUSA-N captafol Chemical compound C1C=CC[C@H]2C(=O)N(SC(Cl)(Cl)C(Cl)Cl)C(=O)[C@H]21 JHRWWRDRBPCWTF-OLQVQODUSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- RNFNDJAIBTYOQL-UHFFFAOYSA-N chloral hydrate Chemical compound OC(O)C(Cl)(Cl)Cl RNFNDJAIBTYOQL-UHFFFAOYSA-N 0.000 description 1
- 229960002327 chloral hydrate Drugs 0.000 description 1
- VDQQXEISLMTGAB-UHFFFAOYSA-N chloramine T Chemical compound [Na+].CC1=CC=C(S(=O)(=O)[N-]Cl)C=C1 VDQQXEISLMTGAB-UHFFFAOYSA-N 0.000 description 1
- YWMLZQYDCHFLMO-UHFFFAOYSA-N chlorobenzene formaldehyde Chemical compound C=O.ClC1=CC=CC=C1 YWMLZQYDCHFLMO-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 150000001904 cucurbitacins Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- PIGAXYFCLPQWOD-UHFFFAOYSA-N dihydrocucurbitacin I Natural products CC12C(=O)CC3(C)C(C(C)(O)C(=O)CCC(C)(O)C)C(O)CC3(C)C1CC=C1C2C=C(O)C(=O)C1(C)C PIGAXYFCLPQWOD-UHFFFAOYSA-N 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- QELUYTUMUWHWMC-UHFFFAOYSA-N edaravone Chemical compound O=C1CC(C)=NN1C1=CC=CC=C1 QELUYTUMUWHWMC-UHFFFAOYSA-N 0.000 description 1
- JOXWSDNHLSQKCC-UHFFFAOYSA-N ethenesulfonamide Chemical compound NS(=O)(=O)C=C JOXWSDNHLSQKCC-UHFFFAOYSA-N 0.000 description 1
- IIWMSIPKUVXHOO-UHFFFAOYSA-N ethyl hexyl sulfate Chemical compound CCCCCCOS(=O)(=O)OCC IIWMSIPKUVXHOO-UHFFFAOYSA-N 0.000 description 1
- 150000004675 formic acid derivatives Chemical class 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229940099596 manganese sulfate Drugs 0.000 description 1
- 239000011702 manganese sulphate Substances 0.000 description 1
- 235000007079 manganese sulphate Nutrition 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- SQQMAOCOWKFBNP-UHFFFAOYSA-L manganese(II) sulfate Chemical compound [Mn+2].[O-]S([O-])(=O)=O SQQMAOCOWKFBNP-UHFFFAOYSA-L 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- YZMHQCWXYHARLS-UHFFFAOYSA-N naphthalene-1,2-disulfonic acid Chemical compound C1=CC=CC2=C(S(O)(=O)=O)C(S(=O)(=O)O)=CC=C21 YZMHQCWXYHARLS-UHFFFAOYSA-N 0.000 description 1
- ZFIFHAKCBWOSRN-UHFFFAOYSA-N naphthalene-1-sulfonamide Chemical compound C1=CC=C2C(S(=O)(=O)N)=CC=CC2=C1 ZFIFHAKCBWOSRN-UHFFFAOYSA-N 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-M naphthalene-1-sulfonate Chemical compound C1=CC=C2C(S(=O)(=O)[O-])=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-M 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- KVBGVZZKJNLNJU-UHFFFAOYSA-M naphthalene-2-sulfonate Chemical compound C1=CC=CC2=CC(S(=O)(=O)[O-])=CC=C21 KVBGVZZKJNLNJU-UHFFFAOYSA-M 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
- HZPNKQREYVVATQ-UHFFFAOYSA-L nickel(2+);diformate Chemical compound [Ni+2].[O-]C=O.[O-]C=O HZPNKQREYVVATQ-UHFFFAOYSA-L 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 description 1
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 description 1
- BFDHFSHZJLFAMC-UHFFFAOYSA-L nickel(ii) hydroxide Chemical compound [OH-].[OH-].[Ni+2] BFDHFSHZJLFAMC-UHFFFAOYSA-L 0.000 description 1
- 235000001968 nicotinic acid Nutrition 0.000 description 1
- 229960003512 nicotinic acid Drugs 0.000 description 1
- 239000011664 nicotinic acid Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- ZMLDXWLZKKZVSS-UHFFFAOYSA-N palladium tin Chemical compound [Pd].[Sn] ZMLDXWLZKKZVSS-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000008055 phosphate buffer solution Substances 0.000 description 1
- 150000003053 piperidines Chemical class 0.000 description 1
- MXXWOMGUGJBKIW-YPCIICBESA-N piperine Chemical compound C=1C=C2OCOC2=CC=1/C=C/C=C/C(=O)N1CCCCC1 MXXWOMGUGJBKIW-YPCIICBESA-N 0.000 description 1
- 229940075559 piperine Drugs 0.000 description 1
- WVWHRXVVAYXKDE-UHFFFAOYSA-N piperine Natural products O=C(C=CC=Cc1ccc2OCOc2c1)C3CCCCN3 WVWHRXVVAYXKDE-UHFFFAOYSA-N 0.000 description 1
- 235000019100 piperine Nutrition 0.000 description 1
- 229940081310 piperonal Drugs 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 150000003141 primary amines Chemical group 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- UNYWISZSMFIKJI-UHFFFAOYSA-N prop-2-ene-1-sulfonamide Chemical compound NS(=O)(=O)CC=C UNYWISZSMFIKJI-UHFFFAOYSA-N 0.000 description 1
- AZILIHDNRMYWGT-UHFFFAOYSA-N pyridin-2-yl propane-1-sulfonate Chemical compound CCCS(=O)(=O)OC1=CC=CC=N1 AZILIHDNRMYWGT-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- OARRHUQTFTUEOS-UHFFFAOYSA-N safranin Chemical compound [Cl-].C=12C=C(N)C(C)=CC2=NC2=CC(C)=C(N)C=C2[N+]=1C1=CC=CC=C1 OARRHUQTFTUEOS-UHFFFAOYSA-N 0.000 description 1
- KYKFCSHPTAVNJD-UHFFFAOYSA-L sodium adipate Chemical compound [Na+].[Na+].[O-]C(=O)CCCCC([O-])=O KYKFCSHPTAVNJD-UHFFFAOYSA-L 0.000 description 1
- 239000001601 sodium adipate Substances 0.000 description 1
- 235000011049 sodium adipate Nutrition 0.000 description 1
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 description 1
- 239000004299 sodium benzoate Substances 0.000 description 1
- 235000010234 sodium benzoate Nutrition 0.000 description 1
- 239000000176 sodium gluconate Substances 0.000 description 1
- 235000012207 sodium gluconate Nutrition 0.000 description 1
- 229940005574 sodium gluconate Drugs 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 229960004025 sodium salicylate Drugs 0.000 description 1
- VOADVZVYWFSHSM-UHFFFAOYSA-L sodium tellurite Chemical compound [Na+].[Na+].[O-][Te]([O-])=O VOADVZVYWFSHSM-UHFFFAOYSA-L 0.000 description 1
- BWYYYTVSBPRQCN-UHFFFAOYSA-M sodium;ethenesulfonate Chemical compound [Na+].[O-]S(=O)(=O)C=C BWYYYTVSBPRQCN-UHFFFAOYSA-M 0.000 description 1
- LDHXNOAOCJXPAH-UHFFFAOYSA-M sodium;prop-2-yne-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC#C LDHXNOAOCJXPAH-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- NVBFHJWHLNUMCV-UHFFFAOYSA-N sulfamide Chemical class NS(N)(=O)=O NVBFHJWHLNUMCV-UHFFFAOYSA-N 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- YODZTKMDCQEPHD-UHFFFAOYSA-N thiodiglycol Chemical compound OCCSCCO YODZTKMDCQEPHD-UHFFFAOYSA-N 0.000 description 1
- 229950006389 thiodiglycol Drugs 0.000 description 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- BWHOZHOGCMHOBV-BQYQJAHWSA-N trans-benzylideneacetone Chemical compound CC(=O)\C=C\C1=CC=CC=C1 BWHOZHOGCMHOBV-BQYQJAHWSA-N 0.000 description 1
- MBYLVOKEDDQJDY-UHFFFAOYSA-N tris(2-aminoethyl)amine Chemical compound NCCN(CCN)CCN MBYLVOKEDDQJDY-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 239000011667 zinc carbonate Substances 0.000 description 1
- 235000004416 zinc carbonate Nutrition 0.000 description 1
- 229910000010 zinc carbonate Inorganic materials 0.000 description 1
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 1
- 229910021511 zinc hydroxide Inorganic materials 0.000 description 1
- 229940007718 zinc hydroxide Drugs 0.000 description 1
- VRGNUPCISFMPEM-ZVGUSBNCSA-L zinc;(2r,3r)-2,3-dihydroxybutanedioate Chemical compound [Zn+2].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O VRGNUPCISFMPEM-ZVGUSBNCSA-L 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/565—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of zinc
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C227/00—Preparation of compounds containing amino and carboxyl groups bound to the same carbon skeleton
- C07C227/02—Formation of carboxyl groups in compounds containing amino groups, e.g. by oxidation of amino alcohols
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C229/00—Compounds containing amino and carboxyl groups bound to the same carbon skeleton
- C07C229/02—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton
- C07C229/04—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated
- C07C229/06—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton
- C07C229/10—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton the nitrogen atom of the amino group being further bound to acyclic carbon atoms or to carbon atoms of rings other than six-membered aromatic rings
- C07C229/12—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton the nitrogen atom of the amino group being further bound to acyclic carbon atoms or to carbon atoms of rings other than six-membered aromatic rings to carbon atoms of acyclic carbon skeletons
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C253/00—Preparation of carboxylic acid nitriles
- C07C253/30—Preparation of carboxylic acid nitriles by reactions not involving the formation of cyano groups
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Abstract
Description
本發明關於一種電鍍基板之方法,其包含通過含水電鍍浴施加電流之步驟。本發明亦關於一種含水鹼性電鍍浴。本發明亦關於一種式(I)之二酸或其鹽,以及一種製備式(I)之二酸或其鹽之方法;以及一種式(I)之二酸或其鹽在電鍍期間減少氰化物之形成之用途。較佳具體實例與其他較佳具體實例之組合係在本發明之範圍內。The present invention relates to a method for electroplating a substrate, comprising the step of applying a current through an aqueous electroplating bath. The present invention also relates to an aqueous alkaline electroplating bath. The present invention also relates to a diacid of formula (I) or a salt thereof, and a method for preparing a diacid of formula (I) or a salt thereof; and a use of a diacid of formula (I) or a salt thereof to reduce the formation of cyanide during electroplating. The combination of preferred embodiments with other preferred embodiments is within the scope of the present invention.
電鍍在工業上廣泛用於改善物體之表面品質。例如,可改善物體之耐磨性及耐腐蝕性、潤滑性、反射性、導電性或外觀。Electroplating is widely used in industry to improve the surface quality of objects. For example, it can improve the wear and corrosion resistance, lubricity, reflectivity, conductivity or appearance of objects.
典型地,在電鍍期間,藉助於直流電還原金屬之陽離子,在基板上形成金屬塗層。欲塗佈之部件通常用作裝填有電鍍浴之電解槽之陰極。電鍍浴典型地為欲塗佈之金屬之鹽之溶液。陽極通常為一塊該金屬或一些惰性導電材料。Typically, during electroplating, a metallic coating is formed on a substrate by reducing the cations of the metal with the aid of direct current. The part to be coated is usually used as the cathode of an electrolytic cell filled with an electroplating bath. The electroplating bath is typically a solution of the salt of the metal to be coated. The anode is usually a piece of this metal or some inert conductive material.
電鍍浴通常含有使金屬鹽保持在溶液中之絡合劑。特別是含胺絡合劑,諸如二伸乙基三胺(diethylenetriaamine;DETA),為電鍍工業中廣泛使用之重要添加劑。然而,此類含胺絡合劑在非所欲的無氧氧化期間形成氰化物及副產物。氰化物不僅有毒,而且為太強的絡合劑,其會降低可被電沉積之金屬鹽之濃度。Electroplating baths usually contain ligands to keep the metal salt in solution. Amine-containing ligands, such as diethylenetriaamine (DETA), are important additives widely used in the electroplating industry. However, these amine-containing ligands form cyanide and byproducts during the undesirable anaerobic oxidation. Cyanide is not only toxic, but also too strong a ligand, which reduces the concentration of metal salt that can be electrodeposited.
除了在電鍍期間減少電鍍浴中氰化物之形成之外,本發明之其他目的為實現高品質光學外觀、層中金屬之均勻組成、根據電流密度梯度之沉積金屬之層厚度之線性梯度。Besides reducing the formation of cyanide in the plating bath during electroplating, other objects of the invention are to achieve high quality optical appearance, uniform composition of the metal in the layer, linear gradient of the layer thickness of the deposited metal according to the current density gradient.
本發明關於一種電鍍基板之方法,其包含通過含水電鍍浴施加電流之步驟,該含水電鍍浴包含基板及式(I)之二酸或其鹽,其中n為2、3或4。本發明亦關於一種含水鹼性電鍍浴,其包含式(I)之二酸或其鹽、金屬離子源及視需要選用之選自光亮劑、調平劑、絡合劑、水軟化劑或消泡劑之其他添加劑。本發明亦關於一種式(I)之二酸或其鹽,以及一種製備式(I)之二酸或其鹽之方法,其包含水解式(II)之二腈;以及一種製備式(II)之二腈之方法,其中n為2、3或4,其包含將丙烯腈加成至式(III)之二胺中;以及一種式(I)之二酸或其鹽在電鍍期間減少氰化物之形成之用途。The present invention relates to a method for electroplating a substrate, which includes the step of applying electric current through an aqueous electroplating bath. The aqueous electroplating bath includes a substrate and a diacid of formula (I) or a salt thereof, wherein n is 2, 3 or 4. The present invention also relates to an aqueous alkaline electroplating bath, which contains a diacid of formula (I) or a salt thereof, a metal ion source, and optionally a brightener, a leveling agent, a complexing agent, a water softener or a defoaming agent. Other additives of the agent. The present invention also relates to a diacid of formula (I) or a salt thereof, and a method for preparing the diacid of formula (I) or a salt thereof, which comprises hydrolyzing the dinitrile of formula (II); and a method of preparing the diacid of formula (II) A process for dinitriles, wherein n is 2, 3 or 4, which comprises adding acrylonitrile to a diamine of formula (III); and a diacid of formula (I) or a salt thereof to reduce cyanide during electroplating The purpose of its formation.
該等目的藉由一種電鍍基板之方法來實現,該方法包含通過含水電鍍浴施加電流之步驟,該含水電鍍浴包含基板及式(I)之二酸 (I) 或其鹽,其中n為2、3或4。 These objects are achieved by a method for electroplating a substrate, the method comprising the step of applying a current through an aqueous electroplating bath, the aqueous electroplating bath comprising the substrate and a diacid of formula (I) (I) or a salt thereof, wherein n is 2, 3 or 4.
較佳地,n為3。在另一種形式中,n為2。在另一種形式中,n為4。在另一種較佳形式中,n為3或4。Preferably, n is 3. In another form, n is 2. In another form, n is 4. In another preferred form, n is 3 or 4.
電鍍浴可包含0.1至200 g/l、1至100 g/l、2至50 g/l或3至30 g/l之二酸。The plating bath may contain 0.1 to 200 g/l, 1 to 100 g/l, 2 to 50 g/l or 3 to 30 g/l of the diacid.
二酸之合適的鹽為鹼金屬鹽、鹼土金屬鹽、銨鹽、有機鹽或其混合物。較佳的二酸之鹽為鹼金屬鹽,諸如鈉鹽或鉀鹽。取決於pH值,二酸可以酸形式、鹽形式及其混合物存在,例如在水溶液中。Suitable salts of the diacid are alkaline metal salts, alkaline earth metal salts, ammonium salts, organic salts or mixtures thereof. Preferred salts of the diacid are alkaline metal salts, such as sodium salts or potassium salts. Depending on the pH value, the diacid may be present in acid form, salt form and mixtures thereof, for example in aqueous solution.
電鍍浴通常含有 鹼性組分,諸如鹼金屬之氫氧化物。合適的鹼性組分為氫氧化鈉、氫氧化鉀或氫氧化鋰。鹼性組分之濃度可為50至250 g/l,或100至200 g/l。電鍍浴可具有>10之pH,或較佳>11之pH。 The electroplating bath usually contains an alkaline component , such as an alkaline metal hydroxide. Suitable alkaline components are sodium hydroxide, potassium hydroxide or lithium hydroxide. The concentration of the alkaline component may be 50 to 250 g/l, or 100 to 200 g/l. The electroplating bath may have a pH > 10, or preferably a pH > 11.
電流通常通過電鍍浴在 陽極與陰極之間流動。陽極可由鋅、錳、鐵、不繡鋼、鎳、碳或耐腐蝕金屬(諸如鍍鉑鈦或鈀錫合金)製成。 Electrical current usually flows between the anode and cathode through a plating bath. Anodes can be made from zinc, manganese, iron, stainless steel, nickel, carbon or corrosion-resistant metals such as platinum-coated titanium or palladium-tin alloys.
陰極可為欲電鍍之基板。 基板可由金屬或合金製成,諸如鐵、鎳及銅、其合金、或鋅酸鋁。基板可具有任何形狀,諸如板狀、長方體、實心圓柱體、空心圓柱體、球體。 The cathode can be the substrate to be electroplated. The substrate may be made of metal or alloys such as iron, nickel and copper, alloys thereof, or aluminum zincate. The substrate may have any shape, such as plate, cuboid, solid cylinder, hollow cylinder, sphere.
陰極 電流密度可為0.1至20 A/dm 2,或0.2至10 A/dm 2,或0.5至6 A/dm 2。可施加陰極電流1分鐘至5小時,或5分鐘至2小時,或10分鐘至1小時。 The cathodic current density may be 0.1 to 20 A/dm 2 , or 0.2 to 10 A/dm 2 , or 0.5 to 6 A/dm 2 . The cathodic current may be applied for 1 minute to 5 hours, or 5 minutes to 2 hours, or 10 minutes to 1 hour.
電鍍可採用滾電鍍或掛電鍍之方式進行。可在注入或不注入空氣之情況下,以及在攪拌或不攪拌基板之情況下進行電鍍。Plating can be done by roller plating or hanging plating. Plating can be done with or without air injection and with or without stirring the substrate.
陽極區或陰極區可分開或者可使用膜陽極。較佳地,在不藉由膜或隔板將陽極及陰極彼此分開之情況下進行電鍍。The anode region or cathode region may be separate or a membrane anode may be used. Preferably, electroplating is performed without separating the anode and cathode from each other by a membrane or separator.
電鍍可在5至50℃或10至40℃之溫度下進行。Electroplating can be performed at a temperature of 5 to 50°C or 10 to 40°C.
電鍍浴為含水電鍍浴,其中水含量可為至少500、600、700或800 g/l。The electroplating bath is an aqueous electroplating bath, in which the water content may be at least 500, 600, 700 or 800 g/l.
電鍍浴通常包含 金屬離子源。合適的金屬離子源為在水溶液中時能夠提供游離金屬陽離子之任何材料。金屬離子源可包括金屬之鹽或元素金屬。合適的金屬離子源為鋅、鎳、鈷、錳或鐵之離子源,其中鋅及鎳為較佳的。金屬離子源可包含單一金屬離子源或不同金屬離子源之混合物。 Electroplating baths typically contain a source of metal ions . A suitable source of metal ions is any material capable of providing free metal cations when in aqueous solution. The source of metal ions may include salts of metals or elemental metals. Suitable metal ion sources are zinc, nickel, cobalt, manganese or iron ion sources, with zinc and nickel being preferred. The metal ion source may include a single metal ion source or a mixture of different metal ion sources.
較佳地,電鍍浴包含鋅離子源,及視需要選用之其他金屬離子源,諸如鎳離子源。鋅離子源或鎳離子源可包括該等金屬之鹽,或者該等源可為提供至少一些游離鋅離子及鎳離子之任何材料,諸如元素鋅及元素鎳。鋅源及鎳源可進一步包括其他金屬合金、含鋅或含鎳化合物。Preferably, the electroplating bath contains a zinc ion source, and optionally other metal ion sources, such as a nickel ion source. The source of zinc ions or nickel ions may include salts of these metals, or the source may be any material that provides at least some free zinc ions and nickel ions, such as elemental zinc and elemental nickel. The zinc and nickel sources may further include other metal alloys, zinc-containing or nickel-containing compounds.
合適的金屬(諸如鋅或鎳)之鹽為無機金屬鹽,諸如鹵化物、碳酸鹽、氫氧化物、硫酸銨、胺基磺酸鹽、乙酸鹽、甲酸鹽、硝酸鹽及硫酸鹽,及其水合物。Suitable salts of metals such as zinc or nickel are inorganic metal salts such as halides, carbonates, hydroxides, ammonium sulfates, sulfamides, acetates, formates, nitrates and sulfates, and its hydrate.
較佳的 鋅離子源為氯化鋅、硫酸鋅、氧化鋅、氫氧化鋅、乙酸鋅、碳酸鋅、酒石酸鋅及胺基磺酸鋅,其中氯化鋅及硫酸鋅為特別較佳的。 Preferred zinc ion sources are zinc chloride, zinc sulfate, zinc oxide, zinc hydroxide, zinc acetate, zinc carbonate, zinc tartrate and zinc sulfamate, among which zinc chloride and zinc sulfate are particularly preferred.
較佳的 鎳離子源為氯化鎳、硫酸鎳、氫氧化鎳、乙酸鎳、硫酸鎳銨、碳酸鎳、甲酸鎳及胺基磺酸鎳,其中氯化鎳及硫酸鎳為特別較佳的。 Preferred nickel ion sources are nickel chloride, nickel sulfate, nickel hydroxide, nickel acetate, nickel ammonium sulfate, nickel carbonate, nickel formate and nickel sulfamate, among which nickel chloride and nickel sulfate are particularly preferred.
金屬離子源之濃度,例如鋅離子源或鎳離子源之濃度可在0.1至100 g/l、或0.5至50 g/l、或1至30 g/l範圍內。The concentration of the metal ion source, for example, the concentration of the zinc ion source or the nickel ion source may be in the range of 0.1 to 100 g/l, or 0.5 to 50 g/l, or 1 to 30 g/l.
金屬離子之濃度,例如鋅離子或鎳離子之濃度可在0.01至100 g/l、或0.1至50 g/l、或0.2至20 g/l範圍內。The concentration of metal ions, such as zinc ions or nickel ions, may range from 0.01 to 100 g/l, or from 0.1 to 50 g/l, or from 0.2 to 20 g/l.
除了二酸之外,電鍍浴可包含其他 電鍍添加劑,諸如光亮劑、調平劑、絡合劑、水軟化劑或消泡劑。 In addition to the diacids, the electroplating bath may contain other electroplating additives such as brighteners, levelers, complexing agents, water softeners or defoamers.
合適的 光亮劑為烷基萘、苯磺酸、苯二磺酸、苯三磺酸、萘二磺酸、萘三磺酸、苯磺醯胺、萘磺醯胺、苯磺醯亞胺、萘磺醯亞胺、乙烯基磺醯胺、烯丙基磺醯胺、其鹽、及其組合。 Suitable brighteners are alkyl naphthalenes, benzenesulfonic acid, benzene disulfonic acid, benzene trisulfonic acid, naphthalene disulfonic acid, naphthalene trisulfonic acid, benzene sulfonamide, naphthalene sulfonamide, benzenesulfonimide, naphthalene Sulfonimide, vinylsulfonamide, allylsulfonamide, salts thereof, and combinations thereof.
光亮劑之其他實例為哌、胍、福馬林及環氧氯丙烷之縮合產物;吡啶丙基磺酸鹽;N-芐基-3-羧基氯化吡啶;葫蘆巴鹼;炔丙基磺酸鈉;炔丙醇;乙二醇炔丙醇醚;乙氧基化丁炔二醇;二戊基磺基琥珀酸鈉;N,N'-雙[3-(二甲基胺基)丙基]脲,與1,3-二氯丙烷之聚合物;羧乙基異硫脲甜菜鹼;乙基己基硫酸鹽;苯并噻唑;N-芐基菸鹼酸酯;芐基-2-甲基咪唑;2-萘磺酸鹽之甲醛縮合物;甲基萘酮;亞苄丙酮;異丙苯磺酸鈉;乙烯基磺酸鈉;苯并噻唑鎓-2-[4-(二甲基胺基)苯基]-3,6-二甲基氯化物;N,N-二甲基二硫代胺基甲醯基丙基磺酸鈉鹽;3-巰基-1-丙磺酸,鈉鹽;O-乙基二硫代碳酸-S-(3-磺丙基)-酯,鉀鹽;雙-(3-磺丙基)-二硫化物,二鈉鹽;3-S-異硫脲丙基磺酸鹽;3-(苯并噻唑基-2-巰基)-丙基-磺酸,鈉鹽;N-(聚丙烯醯胺);番紅;結晶紫及其衍生物;二甲基苯基吡唑酮(phenazonium)染料及其衍生物;硫二甘醇乙氧化物;月桂基硫酸鈉;1-羥基乙烯-1,1-二膦酸;乙氧基化β萘酚;磺化烷基酚乙氧化物之鈉鹽;硫化苯磺酸;丁炔二醇二羥丙基磺酸鹽;糖精鈉;3-巰基-1-丙磺酸,鈉鹽;1-萘磺酸之甲醛縮合物;苯并三唑;苯甲酸鈉;2-胺基吡啶與環氧氯丙烷之含水反應產物;伸脲基季銨聚合物;咪唑及環氧氯丙烷之含水反應產物;香草精;大茴香醛;胡椒醛;硫脲;聚乙烯醇;還原聚乙烯醇;鄰氯苯甲醛;a-萘醛;縮合萘磺酸鹽;菸鹼酸;吡啶;3-羥基丙烷磺酸鹽;烯丙基氯化吡啶;二苯磺醯胺;吡啶丁烷磺酸鹽;烯丙基磺酸鈉;乙烯基磺酸鈉;萘三磺酸;異丙苯磺酸鈉;羧甲基氯化吡啶;炔丙基羥丙基醚磺酸鹽;鄰磺基苯甲醛(o-sulfobenzaldehyde);咪唑及環氧氯丙烷之含水反應產物;巰基硫醚;聚乙烯吡咯烷酮;己二酸鈉;水合氯醛;葡萄糖酸鈉;水楊酸鈉;硫酸錳;硫酸鎘;亞碲酸鈉;及甘胺酸。電鍍浴中光亮劑之濃度可為0.01 g/l至10 g/l範圍。Other examples of brighteners are piperine. , guanidine, formalin and epichlorohydrin condensation products; pyridinyl propane sulfonate; N-benzyl-3-carboxypyridinium chloride; cucurbitacin; sodium propargyl sulfonate; propargyl alcohol; ethylene glycol propargyl alcohol ether; ethoxylated butynediol; sodium diamyl sulfosuccinate; N,N'-bis[3-(dimethylamino)propyl]urea, polymer with 1,3-dichloropropane; carboxyethyl isothiourea betaine; ethylhexyl sulfate; benzothiazole; N-benzyl nicotinate; benzyl-2-methylimidazole; formaldehyde condensate of 2-naphthalenesulfonate; methyl naphthalene ketone; benzylideneacetone; sodium cumenesulfonate; vinylsulfone sodium; benzothiazolium-2-[4-(dimethylamino)phenyl]-3,6-dimethyl chloride; N,N-dimethyldithiocarbamoylpropyl sulfonate sodium salt; 3-butyl-1-propanesulfonic acid, sodium salt; O-ethyldithiocarbonate-S-(3-sulfopropyl)-ester, potassium salt; bis-(3-sulfopropyl)-disulfide, disodium salt; 3-S-isothioureapropyl sulfonate; 3-(Benzothiazolyl-2-butyl)-propyl-sulfonic acid, sodium salt; N-(polyacrylamide); safranin; crystal violet and its derivatives; phenazonium ) dyes and their derivatives; thiodiglycol ethoxylate; sodium lauryl sulfate; 1-hydroxyethylene-1,1-diphosphonic acid; ethoxylated beta-naphthol; sodium salt of sulfonated alkylphenol ethoxylate; sulfonated benzenesulfonic acid; butynediol dihydroxypropyl sulfonate; sodium saccharin; 3-butyl-1-propanesulfonic acid, sodium salt; formaldehyde condensate of 1-naphthalenesulfonic acid; benzotriazole; sodium benzoate; aqueous reaction products of 2-aminopyridine and epichlorohydrin; ureidoquaternary ammonium polymer; aqueous reaction products of imidazole and epichlorohydrin; vanilla extract; anisaldehyde; piperonal; thiourea; polyvinyl alcohol; reduced polyvinyl alcohol; o-chlorobenzene Formaldehyde; a-naphthaldehyde; condensed naphthalene sulfonate; nicotinic acid; pyridine; 3-hydroxypropane sulfonate; allylpyridinium chloride; diphenylsulfonamide; pyridine butane sulfonate; sodium allyl sulfonate; sodium vinyl sulfonate; naphthalenetrisulfonic acid; sodium cumene sulfonate; carboxymethylpyridinium chloride; propargyl hydroxypropyl ether sulfonate; o-sulfobenzaldehyde; aqueous reaction products of imidazole and epichlorohydrin; phenyl sulfide; polyvinylpyrrolidone; sodium adipate; chloral hydrate; sodium gluconate; sodium salicylate; manganese sulfate; cadmium sulfate; sodium tellurite; and glycine. The concentration of brightener in the plating bath can range from 0.01 g/l to 10 g/l.
合適的 調平劑為硫化合物,例如3-巰基-1,2,4-三唑或硫脲。電鍍浴中調平劑之濃度可為0.01 g/l至1 g/l範圍。 Suitable leveling agents are sulfur compounds, such as 3-hydroxy-1,2,4-triazole or thiourea. The concentration of the leveling agent in the plating bath may be in the range of 0.01 g/l to 1 g/l.
合適的 絡合劑為烷基烯胺化合物,諸如乙二胺、三伸乙基四胺及四伸乙基五胺;上述烷基烯胺之環氧乙烷或環氧丙烷加成物;胺醇,諸如N-(2-胺基乙基)-乙醇胺及2-羥基乙基胺基丙胺;聚(羥烷基)伸烷基二胺,諸如N-2(-羥乙基)-N,N',N'-三乙基乙二胺、N,N'-二(2-羥乙基)-N,N'-二乙基乙二胺、N,N,N',N'-肆(2-羥乙基)丙二胺及N,N,N',N'-肆(2-羥丙基)乙二胺;由乙烯亞胺、1,2-丙烯亞胺等獲得之聚(伸烷基亞胺);自乙二胺、三伸乙基四胺、乙醇胺、二乙醇胺獲得之聚(烷基烯胺)及聚(胺醇);或其混合物。絡合劑之濃度可為5至200 g/l、或30至100 g/l。 Suitable ligands are alkyl enamine compounds such as ethylenediamine, triethylenetetramine and tetraethylenepentamine; ethylene oxide or propylene oxide adducts of the above alkyl enamines; amine alcohols such as N-(2-aminoethyl)-ethanolamine and 2-hydroxyethylaminopropylamine; poly(hydroxyalkyl) alkylene diamines such as N-2(-hydroxyethyl)-N,N',N'-triethylethylenediamine, N,N'-di( N,N,N',N'-tetra(2-hydroxyethyl)-N,N'-diethylethylenediamine, N,N,N',N'-tetra(2-hydroxypropyl)ethylenediamine; poly(alkylene imine) obtained from ethyleneimine, 1,2-propyleneimine, etc.; poly(alkyleneamine) and poly(amino alcohol) obtained from ethylenediamine, triethylenetetramine, ethanolamine, diethanolamine; or mixtures thereof. The concentration of the complexing agent may be 5 to 200 g/l, or 30 to 100 g/l.
本發明亦關於一種含水鹼性電鍍浴,其包含 式(I)之二酸 (I) 或其鹽,其中n為2、3或4, 金屬離子源,及 視需要選用之選自光亮劑、調平劑、絡合劑、水軟化劑或消泡劑之其他添加劑。 The present invention also relates to an aqueous alkaline electroplating bath containing a diacid of formula (I) (I) or a salt thereof, wherein n is 2, 3 or 4, a source of metal ions, and other additives selected from the group consisting of brighteners, leveling agents, complexing agents, water softeners or defoaming agents as necessary.
本發明亦關於一種含水鹼性電鍍浴,其包含 式(I)之二酸 (I) 或其鹽,其中n為2、3或4, 金屬離子源,其為鋅離子源,及視需要選用之其他金屬離子源, 及 視需要選用之選自光亮劑、調平劑、絡合劑、水軟化劑或消泡劑之其他添加劑。 The present invention also relates to an aqueous alkaline electroplating bath containing a diacid of formula (I) (I) or its salt, wherein n is 2, 3 or 4, a metal ion source, which is a zinc ion source, and other metal ion sources selected as needed, and selected from the group consisting of brighteners, leveling agents, Other additives such as complexing agents, water softeners or defoaming agents.
含水鹼性電鍍浴較佳包含式(I)之二酸,其中n為3或4。The aqueous alkaline electroplating bath preferably comprises a diacid of formula (I) wherein n is 3 or 4.
本發明亦關於一種式(I)之二酸 (I) 其中n為2、3或4,或其鹽。較佳地,n為3。在式(I)之二酸之另一種較佳形式中,n為3或4。二酸之合適的鹽為鹼金屬鹽、鹼土金屬鹽、銨鹽、有機鹽或其混合物。較佳的二酸之鹽為鹼金屬鹽,諸如鈉鹽或鉀鹽。取決於pH值,二酸可以酸形式、鹽形式及其混合物存在,例如在水溶液中。 The present invention also relates to a di-acid of formula (I) (I) Where n is 2, 3 or 4, or a salt thereof. Preferably, n is 3. In another preferred form of the diacid of formula (I), n is 3 or 4. Suitable salts of diacids are alkali metal salts, alkaline earth metal salts, ammonium salts, organic salts or mixtures thereof. Preferred diacid salts are alkali metal salts, such as sodium or potassium salts. Depending on the pH value, diacids can exist in acid form, salt form and mixtures thereof, for example in aqueous solutions.
本發明亦關於一種製備式(I)之二酸或其鹽之方法 (I) 其中n為2、3或4, 其包含 水解式(II)之二腈 (II)。 The present invention also relates to a method for preparing the diacid of formula (I) or a salt thereof (I) wherein n is 2, 3 or 4, which contains dinitrile of hydrolyzable formula (II) (II).
通常在鹼存在下,例如在水溶液中水解二腈。鹼較佳為鹼金屬之氫氧化物,諸如氫氧化鈉、氫氧化鉀或氫氧化鋰。二腈與鹼金屬之氫氧化物之莫耳比可為1:1至1:4,或1:1.5至1:3,或1:1.7至1:2.3。通常在5至100°C、或50至100°C、或70至100°C之間之溫度下水解二腈。可藉由加熱或真空自所得之二酸中除去過量水。Dinitriles are usually hydrolyzed in the presence of a base, for example in aqueous solution. The base is preferably an alkali metal hydroxide, such as sodium hydroxide, potassium hydroxide or lithium hydroxide. The molar ratio of dinitrile to alkali metal hydroxide can be 1:1 to 1:4, or 1:1.5 to 1:3, or 1:1.7 to 1:2.3. Dinitriles are typically hydrolyzed at temperatures between 5 and 100°C, or between 50 and 100°C, or between 70 and 100°C. Excess water can be removed from the resulting diacid by heat or vacuum.
本發明亦關於一種製備式(II)二腈之方法 (II) 其中n為2、3或4, 其包含將丙烯腈 加成至式(III)之二胺中 (III)。 The present invention also relates to a method for preparing a dinitrile of formula (II) (II) wherein n is 2, 3 or 4, comprising adding acrylonitrile to a diamine of formula (III) (III).
丙烯腈及二胺通常以1.9:1至2.5:1、或2.0:1至2.4:1、或2.0:1至2.3:1之莫耳比存在。加成通常在5至100°C、或10至80°C、或15至60°C之溫度下進行。在加成期間,可冷卻反應物以保持溫度。丙烯腈與二胺之加成亦稱為麥可加成(Michael addition)。加成可在水溶液中進行,例如其中二胺存在於水中,並且丙烯腈被添加至水溶液中。Acrylonitrile and diamine are usually present in a molar ratio of 1.9:1 to 2.5:1, or 2.0:1 to 2.4:1, or 2.0:1 to 2.3:1. The addition is usually carried out at a temperature of 5 to 100°C, or 10 to 80°C, or 15 to 60°C. During the addition, the reactants can be cooled to maintain temperature. The addition of acrylonitrile and diamine is also called Michael addition. The addition can be carried out in an aqueous solution, for example where the diamine is present in the water and acrylonitrile is added to the aqueous solution.
式(III)之二胺可用作高純度級(例如至少90、95或98 wt%純度)或用作工業級(例如純度為50至90 wt%,或60至80 wt%)。工業級式(III)之二胺可包含含胺副產物,諸如支鏈胺或包含哌單元之環胺。工業級三伸乙基四胺(triethylenetetraamine;TETA)可含有參-胺基乙胺(亦稱為「支鏈TETA」)、N,N'-雙胺基乙基哌(亦稱為「雙AEP」)及/或N-[(2-胺基乙基)2-胺基乙基]哌(亦稱為「PEEDA」)。The diamine of formula (III) can be used as a high purity grade (e.g., at least 90, 95 or 98 wt% purity) or as an industrial grade (e.g., purity of 50 to 90 wt%, or 60 to 80 wt%). The industrial grade diamine of formula (III) may contain amine-containing by-products, such as branched amines or piperidines. Industrial grade triethylenetetraamine (TETA) may contain 3-aminoethylamine (also known as "branched TETA"), N,N'-bis(aminoethyl)piperidin (also known as "bis-AEP") and/or N-[(2-aminoethyl)2-aminoethyl]piperidin (Also known as "PEEDA").
當將丙烯腈加成至式(III)之二胺中時,含胺副產物可與丙烯腈反應以製備相應的二腈及視需要選用之相應的高級腈。When acrylonitrile is added to the diamine of formula (III), the amine-containing by-product can react with acrylonitrile to prepare the corresponding dinitrile and optionally the corresponding higher nitrile.
製備式(I)之二酸之方法包含水解式(II)之二腈,其可含有由丙烯腈加成至含胺副產物中產生之二腈及視需要選用之高級腈。式(I)之二酸可含有由水解二腈及視需要選用之高級腈產生之相應的二酸及視需要選用之高級酸,該等二腈及視需要選用之高級腈由丙烯腈加成至含胺副產物中產生。The method for preparing the diacid of formula (I) comprises hydrolyzing the dinitrile of formula (II), which may contain a dinitrile and optionally a higher nitrile produced by the addition of acrylonitrile to an amine-containing byproduct. The diacid of formula (I) may contain the corresponding diacid and optionally a higher acid produced by hydrolyzing the dinitrile and optionally a higher nitrile, which are produced by the addition of acrylonitrile to an amine-containing byproduct.
本發明亦關於一種式(I)之二酸或其鹽之用途 (I) 其中n為2、3或4(較佳其中n為3或4), 其用於 減少電鍍期間 氰化物之形成。可減少氰化物之形成以實現電鍍浴中低於100m g/l、或低於80m g/l、或低於50m g/l之氰化物(CN -)濃度。氰化物濃度可藉由光度法所測定,例如在充電25 Ah之後。 The present invention also relates to the use of a diacid of formula (I) or a salt thereof (I) wherein n is 2, 3 or 4 (preferably wherein n is 3 or 4), which is used to reduce the formation of cyanide during electroplating. The formation of cyanide can be reduced to achieve a cyanide (CN - ) concentration in the electroplating bath of less than 100 mg/l, or less than 80 mg/l, or less than 50 mg/l. The cyanide concentration can be determined photometrically, for example after charging for 25 Ah.
實施例實施例1-丙烯腈至線性TETA之麥可加成 EXAMPLES Example 1 - Macroaddition of acrylonitrile to linear TETA
將694.68 g(4751 mol)線性三伸乙基四胺(TETA,純度99%)冷卻並且添加140.39 g水。在40°C下添加529.34 g(9.976 mol)丙烯腈(ACN)在劑量加入ACN之後,在容器清空之前保持約一小時之後反應時間。根據NMR,產率為95 wt%。694.68 g (4751 mol) of linear triethylenetetramine (TETA, purity 99%) were cooled and 140.39 g of water were added. 529.34 g (9.976 mol) of acrylonitrile (ACN) were added at 40 °C. After the ACN was dosed, the reaction time was kept for about one hour before the vessel was emptied. The yield was 95 wt% according to NMR.
胺值及HNMR證實下式之二腈之結構: 。 實施例2-二腈之水解 The amine value and HNMR confirmed the structure of the dinitrile of the following formula: . Example 2 - Hydrolysis of dinitrile
加熱491.73 g(1947 mol)實施例1製成之二腈並且添加417.62 g水。在85°C下開始劑量加入NaOH,添加總量為623.16 g NaOH 25%(155.79 g NaOH 100%,3895 mol)。劑量加入開始之後不久就可看到氣體產生。在劑量加入NaOH完成之後,將後反應保持在90°C,直到看不到進一步氣體產生。491.73 g (1947 mol) of the dinitrile prepared in Example 1 were heated and 417.62 g of water were added. Start dosing NaOH at 85°C, and the total amount added is 623.16 g NaOH 25% (155.79 g NaOH 100%, 3895 mol). Gas production was seen shortly after dosing began. After dosing of NaOH was complete, the post-reaction was held at 90°C until no further gas evolution was seen.
將內容物冷卻至約70℃之溫度並且將容器緩慢抽空並且在加熱之同時施加緩慢的氮氣流。保持回流直到達至穩定條件。隨後開始蒸餾。持續30分鐘之後,將容器通入氮氣並且冷卻,然後補償蒸餾水量並且清空容器。The contents were cooled to a temperature of about 70°C and the container was slowly evacuated and a slow flow of nitrogen was applied while heating. Maintain reflux until stable conditions are reached. Then distillation begins. After 30 minutes, the container was purged with nitrogen and cooled, then the amount of distilled water was compensated and the container was emptied.
在純度為90%時,產率為95wt%。胺值及H-NMR證實下式之二酸之結構: 。 實施例3-丙烯腈至工業級TETA中之麥可加成 At a purity of 90%, the yield was 95wt%. The amine value and H-NMR confirmed the structure of the diacid of the following formula: Example 3 - Addition of maltose to industrial grade TETA
冷卻528.42 g(3.61 mol)工業級三伸乙基四胺(TETA,純度70%,含有約20% N,N'-雙胺基乙基哌及約10%參-胺基乙胺)並且添加106.68 g水。在40°C下添加421.36 g(7.941 mol)丙烯腈。在劑量加入ACN之後,在容器清空之前保持約一小時之後反應時間。基於工業級TETA中之所有一級胺基,產率為95wt%。 實施例4-二腈之水解 Cool 528.42 g (3.61 mol) of industrial grade triethylenetetramine (TETA, purity 70%, containing about 20% N,N'-bis(aminoethyl)piperidin and about 10% tris-aminoethylamine) and 106.68 g of water were added. 421.36 g (7.941 mol) of acrylonitrile were added at 40°C. After the ACN was dosed, the reaction time was maintained for about one hour before the container was emptied. The yield was 95 wt % based on all primary amine groups in technical grade TETA. Example 4 - Hydrolysis of dinitrile
加熱517.12 g(2048 mol)實施例3製成之二腈並且添加417.62 g水。在85°C下開始劑量加入NaOH以達到總量655.33 g NaOH 25%(175.36 g NaOH 100%,4096 mol)。劑量加入開始之後不久就可看到氣體產生。在劑量加入NaOH完成之後,將後反應保持在90°C,直到看不到進一步氣體產生。517.12 g (2048 mol) of the dinitrile prepared in Example 3 were heated and 417.62 g of water were added. Start dosing NaOH at 85°C to reach a total of 655.33 g NaOH 25% (175.36 g NaOH 100%, 4096 mol). Gas production was seen shortly after dosing began. After dosing of NaOH was complete, the post-reaction was maintained at 90°C until no further gas evolution was seen.
將內容物冷卻至約70℃之溫度並且將容器緩慢抽空並且在加熱之同時施加緩慢的氮氣流。保持回流直到達至穩定條件。隨後開始蒸餾。持續30分鐘之後,將容器通入氮氣並且冷卻,然後補償蒸餾水量並且清空容器。The contents were cooled to a temperature of about 70°C and the container was slowly evacuated and a slow flow of nitrogen was applied while heating. Maintain reflux until stable conditions are reached. Then distillation begins. After 30 minutes, the container was purged with nitrogen and cooled, then the amount of distilled water was compensated and the container was emptied.
在純度為80%時,產率為80 wt%。胺值及H-NMR證實與實施例2相同之結構。 實施例5-在標準赫爾槽(Hull cell)中之電鍍 At a purity of 80%, the yield was 80 wt%. The amine value and H-NMR confirmed the same structure as Example 2. Example 5 - Electroplating in a standard Hull cell
電鍍應用測試是在帶有整流器之標準赫爾槽中進行,每次重複2或3次。赫爾槽為一個裝有250 ml電鍍浴之梯形容器。這種形狀允許將測試鋼板放置在與不繡鋼陽極成一定角度之位置。在38°C下施加1 A之電流25分鐘。最後用水沖洗板並且用壓縮空氣乾燥。The electroplating application tests are carried out in a standard Hull cell with a rectifier, with 2 or 3 repetitions each. The Hull cell is a trapezoidal container containing 250 ml of electroplating bath. This shape allows the test steel plate to be placed at an angle to the stainless steel anode. A current of 1 A is applied for 25 minutes at 38°C. Finally the plate is rinsed with water and dried with compressed air.
含水鹼性電鍍浴含有如下表1所示之組分: - Lutron® Q 75為N,N,N',N'-肆-(2-羥丙基)-乙二胺之水溶液,pH 10-12,約25%之水含量,可購自BASF SE。 - Lugalvan® IZE為咪唑及環氧氯丙烷之加成產物之水溶液,pH 8-10,約55%之水含量,可購自BASF SE。 - Lugalvan® BPC 48為3-羧酸芐基吡啶之水溶液,pH約6,約52%之水含量,可購自BASF SE。 - DETA為二伸乙基三胺,可購自BASF SE。 The aqueous alkaline plating bath contains the components shown in Table 1 below: - Lutron® Q 75 is an aqueous solution of N,N,N',N'-tetra-(2-hydroxypropyl)-ethylenediamine, pH 10-12, about 25% water content, available from BASF SE. - Lugalvan® IZE is an aqueous solution of the addition product of imidazole and epichlorohydrin, pH 8-10, about 55% water content, available from BASF SE. - Lugalvan® BPC 48 is an aqueous solution of 3-benzylpyridine carboxylate, pH about 6, about 52% water content, available from BASF SE. - DETA is diethylenetriamine, available from BASF SE.
表1. 電鍍浴之組成(量以g/l為單位)
比較電鍍浴A包括DETA而非實施例1或2之二酸。DETA為電鍍工業中使用之標準絡合劑。Comparative plating bath A included DETA instead of the diacid of Example 1 or 2. DETA is a standard complexing agent used in the electroplating industry.
比較電鍍浴B包括TETA而非實施例1或2之二酸。所用之TETA為實施例1中之起始材料。Comparative plating bath B included TETA instead of the diacid of Example 1 or 2. TETA used was the starting material in Example 1.
在實施例6-8中進一步分析在實施例5A、B、C及D中製備之測試板。 實施例6-光學外觀 In Examples 6-8, the test panels prepared in Examples 5A, B, C, and D are further analyzed. Example 6 - Optical Appearance
當使用電鍍浴A、C及D時,測試板上Zn/Ni沉積層之光學外觀相似。觀察到均勻的灰色及暗淡表面。該結果表明,實施例1及2之二酸給出了至少相似於工業標準DETA之光學外觀。The optical appearance of the Zn/Ni deposits on the test panels was similar when using plating baths A, C and D. A uniform grey and dull surface was observed. The results show that the diacids of Examples 1 and 2 gave an optical appearance at least similar to that of the industry standard DETA.
電鍍浴B導致不合適的沉積:非常低的層厚度,以及不良且不均勻的合金組成。TETA僅比DETA多一個伸乙基胺單元,並且為製備實施例1及2中二酸之基本單元。然而,TETA顯然不適合達到所需的光學外觀。 實施例7-層厚度 Plating bath B resulted in inappropriate deposition: very low layer thickness, and poor and uneven alloy composition. TETA has only one more ethylamine unit than DETA and is the basic unit of the diacids in Preparation Examples 1 and 2. However, TETA was clearly not suitable to achieve the desired optical appearance. Example 7 - Layer thickness
赫爾槽為一個梯形容器。這種形狀允許將測試鋼板放置在與不繡鋼陽極成一定角度之位置,因此板之一側更靠近陽極(這會導致較高的電流密度),而板之另一側更遠離陽極(這導致較低的電流密度)。The Hull cell is a trapezoidal container. This shape allows the test steel plate to be placed at an angle to the stainless steel anode so that one side of the plate is closer to the anode (which results in a higher current density) and the other side of the plate is further away from the anode (which results in a lower current density).
由於存在電流密度之均勻線性梯度,因此預計沉積金屬之層厚度亦存在線性梯度。Since there is a uniform linear gradient in the current density, a linear gradient in the thickness of the deposited metal layer is also expected.
藉由來自Helmut Fischer GmbH(德國)之Fischerscope® X-Ray XDal在距左邊緣1 cm且距離為1 cm之九個點上分析來自實施例5A、C及D之電鍍板上之層厚度[μm]。結果總結在表2及圖1中。The layer thickness [μm] of the electroplated plates from Examples 5A, C and D was analyzed by Fischerscope® X-Ray XDal from Helmut Fischer GmbH (Germany) at nine points at a distance of 1 cm and 1 cm from the left edge ]. The results are summarized in Table 2 and Figure 1.
圖1顯示以µm為單位之沉積層厚度,在根據實施例5進行電鍍之後如實施例7中在板上在距左邊緣1 cm且距離為1 cm之九個點處所測定。層厚度之良好的線性梯度可參見圖1b)(實施例5D)及圖1c)(實施例5C)。相比之下,圖1a)中之比較電鍍浴實施例5A不為線性的,而是彎曲的。Figure 1 shows the thickness of the deposited layer in µm, measured as in Example 7 on the plate at nine points 1 cm from the left edge and at a distance of 1 cm after electroplating according to Example 5. Good linear gradients in layer thickness can be seen in Figure 1b) (Example 5D) and Figure 1c) (Example 5C). In contrast, comparative electroplating bath Example 5A in Figure 1a) is not linear but curved.
表2. 層厚度[µm]
如上所述,板之一側更靠近陽極(這導致較高的電流密度),而板之另一側更遠離陽極(這導致較低的電流密度)。在電鍍期間,同時沉積Zn及Ni。目標為具有與基板至陽極之距離無關之相同的鋅鎳合金組成。As mentioned above, one side of the plate is closer to the anode (which results in a higher current density), while the other side of the plate is further away from the anode (which results in a lower current density). During electroplating, Zn and Ni are deposited simultaneously. The goal is to have the same zinc-nickel alloy composition independent of the distance from the substrate to the anode.
使用來自Helmut Fischer GmbH(德國)之Fischerscope® X-Ray XDal在距左邊緣1 cm且距離為1 cm之九個點上分析來自實施例5A、C及D之電鍍板上之合金組成。結果總結在表3中。The alloy composition of the electroplated plates from Examples 5A, C and D was analyzed using a Fischerscope® X-Ray XDal from Helmut Fischer GmbH (Germany) at nine points at a distance of 1 cm from the left edge. The results are summarized in Table 3.
表3中之數據顯示,新的二酸添加劑允許合金組成具有相似的良好均勻性,而與基板至陽極之距離無關(因此與電流密度無關)。The data in Table 3 show that the new diacid addition allows similarly good uniformity of alloy composition independent of the substrate-to-anode distance (and therefore independent of current density).
表3. 合金組成
DETA等最先進之電鍍添加劑在陽極處緩慢氧化,形成氰化物(CN -)副產物。這是很有問題的,因為氰化物不僅有毒,而且亦為一種強絡合劑。因此,必須經常且費力地更換電鍍浴。 State-of-the-art plating additives such as DETA slowly oxidize at the anode to form cyanide (CN - ) as a by-product. This is very problematic because cyanide is not only toxic but also a strong chelating agent. As a result, the plating bath must be changed frequently and laboriously.
電鍍浴之長期穩定性測試在包括750 ml電鍍浴之1升直角槽(15x10x6 cm)中進行,其具有與實施例5相同之組成。使用面積為1 dm 2之鋼鍍板,及1 dm 2之二個相對電極。在35°C下施加之電流密度為5 A/dm 2,持續30分鐘。 Long-term stability tests of the electroplating bath were carried out in a 1-liter right-angle tank (15x10x6 cm) containing 750 ml of electroplating bath, which had the same composition as in Example 5. Use a steel plate with an area of 1 dm2 and two opposite electrodes of 1 dm2 . A current density of 5 A/dm 2 was applied at 35°C for 30 minutes.
電鍍期間通常會消耗添加劑,因此添加以下一些添加劑: - 在每個鍍板之後100 mg/l Lugalvan® BPC 48。 - 在每二個鍍板之後:3.25 g/l Zn(作為ZnO);24.25 g/l NaOH;33.3 mg/l Ni(作為NiSO 4)與3.33 g/l之表4中所示之二酸或比較化合物絡合;及1.5 g/l Lugalvan® IZE。 - 每四次鍍敷之後10 g/l Lutron® Q 75;及2 g/l三乙醇胺 Additives are usually consumed during electroplating, so the following additives are added: - After each plate: 100 mg/l Lugalvan® BPC 48. - After every second plate: 3.25 g/l Zn (as ZnO); 24.25 g/l NaOH; 33.3 mg/l Ni (as NiSO 4 ) in combination with 3.33 g/l of the diacid or comparative compound shown in Table 4; and 1.5 g/l Lugalvan® IZE. - After every fourth coat: 10 g/l Lutron® Q 75; and 2 g/l triethanolamine
在每5 Ah(安培小時)充電之後,取出電鍍浴樣品並且經由光度法對氰化物進行如下分析: a)樣品製備 將樣品稱入反應設備中並且與100 ml水混合。在添加10 ml硫酸銅(II)溶液及300 mg氯化錫(II)後,用回流冷凝器及裝有10 ml氫氧化鈉溶液之吸收容器封閉設備。添加10 ml鹽酸並且加熱至沸點。氮氣流轉移吸收容器中產生之氰化氫。1小時反應時間之後轉移完成。將吸收容器中之內容物用純水轉移至50 ml容量瓶中並且裝滿容量瓶。 b)測量 將所準備之樣品之等分試樣放置在100 ml之分液漏斗中,如必要,補充超純水至25 ml之體積。添加10 ml磷酸鹽緩衝溶液,檢查溶液pH值是否為約7。在添加0.5 ml氯胺T之後,搖動溶液。添加15 ml吡啶-吡唑哢試劑(3-甲基-1-苯基-2-吡唑啉-5-酮及4,4'-雙(3-甲基-1-苯基-5-吡唑哢)),靜置30分鐘。然後恰好添加20 ml正丁醇,並且棄去水相。丁醇相通過乾式折疊過濾器過濾至乾燥的25 ml容量瓶中。在10 mm比色管中在632 nm處將溶液在光度計上針對丁醇(作為零值)進行測量。校準點來自KCN參考材料,並且使用相應的等分試樣進行測量。 After every 5 Ah (ampere hours) of charge, a sample of the plating bath was removed and analyzed photometrically for cyanide as follows: a) Sample preparation The sample was weighed into the reaction device and mixed with 100 ml of water. After adding 10 ml of copper (II) sulfate solution and 300 mg of tin (II) chloride, the equipment was closed with a reflux condenser and an absorption container containing 10 ml of sodium hydroxide solution. Add 10 ml hydrochloric acid and heat to boiling point. The nitrogen flow diverts the hydrogen cyanide produced in the absorption vessel. The transfer was complete after a reaction time of 1 hour. Transfer the contents of the absorption container to a 50 ml volumetric flask with pure water and fill the volumetric flask. b) Measurement Place an aliquot of the prepared sample in a 100 ml separatory funnel and, if necessary, add ultrapure water to bring the volume to 25 ml. Add 10 ml of phosphate buffer solution and check that the solution pH is approximately 7. After adding 0.5 ml of Chloramine T, shake the solution. Add 15 ml of pyridine-pyrazolium reagent (3-methyl-1-phenyl-2-pyrazolin-5-one and 4,4'-bis(3-methyl-1-phenyl-5-pyridine) azole)) and let it sit for 30 minutes. Then exactly 20 ml of n-butanol are added and the aqueous phase is discarded. The butanol phase was filtered through a dry pleated filter into a dry 25 ml volumetric flask. The solution was measured on a photometer against butanol (as zero value) at 632 nm in a 10 mm colorimetric tube. Calibration points are derived from the KCN reference material and measurements are made using corresponding aliquots.
結果總結在表4中。其表明在實施例5C及5D之電鍍浴中所用之二酸致使了顯著較低之氰化物形成。The results are summarized in Table 4. It was shown that the diacid used in the electroplating baths of Examples 5C and 5D resulted in significantly lower cyanide formation.
此外,在實施例5A之比較電鍍浴中,在20 Ah之後觀察到沉澱物,這在使用實施例5C及5D之電鍍浴時並未觀察到。Furthermore, in the comparative plating bath of Example 5A, deposits were observed after 20 Ah, which were not observed when using the plating baths of Examples 5C and 5D.
表4. 氰化物濃度[mg/kg電鍍浴]
無without
[圖1]顯示以μm為單位之沉積層厚度。[Figure 1] shows the thickness of the deposited layer in μm.
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