TW202408710A - Wafer processing method which suppresses peeling, deterioration, and damage to a passivation film due to thermal damage, achieves high-quality processing of a pattern layer, and enables high-quality processing of wafers having a passivation film laminated on the pattern layer - Google Patents
Wafer processing method which suppresses peeling, deterioration, and damage to a passivation film due to thermal damage, achieves high-quality processing of a pattern layer, and enables high-quality processing of wafers having a passivation film laminated on the pattern layer Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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Abstract
Description
本發明是有關於一種已將型樣層以鈍化膜來覆蓋之晶圓之加工方法。The present invention relates to a method for processing a wafer having a pattern layer covered with a passivation film.
已知有以一次的雷射來加工鈍化膜與型樣層之方法(參照例如專利文獻1)。 先前技術文獻 專利文獻 It is known that there is a method for processing a passivation film and a pattern layer with a single laser (see, for example, Patent Document 1). Prior Art Document Patent Document
專利文獻1:日本特開2018-026397號公報Patent document 1: Japanese Patent Application Publication No. 2018-026397
發明欲解決之課題Invention Problems to be Solved
然而,若型樣層變厚,會需要以更大的輸出的雷射光線來形成加工溝,若以相同的輸出來進行加工,會產生有鈍化膜剝落、且變脆弱等之問題。However, if the pattern layer becomes thicker, a larger output of laser light will be required to form the processing groove. If the processing is performed with the same output, problems such as the passivation film peeling off and becoming fragile will occur.
本發明是有鑒於所述之問題點而作成的發明,其目的在於提供一種可以品質良好地對在型樣層上積層有鈍化膜之晶圓進行加工之晶圓之加工方法。 用以解決課題之手段 The present invention was made in view of the above-mentioned problems, and an object thereof is to provide a wafer processing method that can process a wafer with a passivation film laminated on a pattern layer with good quality. means to solve problems
為了解決上述之課題並達成目的,本發明之晶圓之加工方法是將在基板的正面形成有型樣層、與覆蓋該型樣層之鈍化膜的晶圓,沿著分割預定線來加工,前述晶圓之加工方法的特徵在於具備以下步驟: 鈍化膜加工步驟,沿著該分割預定線以第1輸出來照射雷射光線,而在該鈍化膜形成第1加工溝; 型樣層加工步驟,沿著該第1加工溝來照射比該第1輸出更大之第2輸出的雷射光線,而在該型樣層形成第2加工溝;及 基板加工步驟,沿著該第2加工溝對該基板進行加工。 In order to solve the above-mentioned problems and achieve the purpose, the wafer processing method of the present invention is to process a wafer having a pattern layer and a passivation film covering the pattern layer on the front side of the substrate along a predetermined dividing line. The above-mentioned wafer processing method is characterized by having the following steps: Passivation film processing step, irradiating laser light with a first output along the predetermined dividing line to form a first processing groove in the passivation film; Pattern layer processing step, irradiating laser light with a second output larger than the first output along the first processing groove to form a second processing groove in the pattern layer; and Substrate processing step, processing the substrate along the second processing groove.
亦可為:該基板加工步驟是藉由分割該基板來製造複數個晶片。Alternatively, the substrate processing step is to manufacture a plurality of chips by dividing the substrate.
亦可為:該鈍化膜為聚醯亞胺。Alternatively: the passivation film is polyimide.
亦可為:該鈍化膜加工步驟是使用具有皮秒或飛秒的範圍的脈衝寬度之雷射光線。Alternatively: the passivation film processing step uses laser light with a pulse width in the range of picoseconds or femtoseconds.
亦可為:該第1加工溝比該第2加工溝的寬度更寬。 發明效果 Alternatively, the first processing groove may be wider than the second processing groove. Effect of the invention
本發明由於是在以第1輸出的雷射光線來加工鈍化膜後,以比第1輸出更大之第2輸出的雷射光線來加工型樣層,因此既抑制對鈍化膜130之熱損害而抑制剝離或劣化、損傷,並且可以做到對型樣層之良好的品質的加工,而可以品質良好地對在型樣層上積層有鈍化膜之晶圓進行加工。The present invention processes the pattern layer with a second laser light having a larger output than the first laser light after processing the passivation film with a first laser light output. This can suppress heat damage to the passivation film 130 and prevent peeling, deterioration, or damage. It can also achieve good quality processing of the pattern layer, and can process a wafer with a passivation film deposited on the pattern layer with good quality.
用以實施發明之形態The form used to implement the invention
針對用於實施本發明之形態(實施形態),一面參照圖式一面詳細地說明。本發明並非因以下的實施形態所記載之內容而受到限定之發明。又,在以下所記載之構成要素中,包含所屬技術領域中具有通常知識者可以容易地設想得到的構成要素、實質上相同的構成要素。此外,以下所記載之構成是可合宜組合的。又,在不脫離本發明之要旨的範圍內,可以進行構成的各種省略、置換或變更。The form for implementing the present invention (implementation form) is described in detail with reference to the drawings. The present invention is not limited by the contents described in the following implementation form. Furthermore, the constituent elements described below include constituent elements that can be easily conceived by a person with ordinary knowledge in the relevant technical field and substantially the same constituent elements. In addition, the structures described below can be appropriately combined. Furthermore, various omissions, substitutions or changes in the structure can be made without departing from the gist of the present invention.
[實施形態1] 依據圖式來說明本發明的實施形態1之晶圓之加工方法。圖1是顯示實施形態1之晶圓之加工方法的處理程序的流程圖。實施形態1之晶圓之加工方法是對如後述之晶圓100進行加工之方法,且如圖1所示,具備鈍化膜加工步驟1001、型樣層加工步驟1002與基板加工步驟1003。 [Implementation Form 1] The wafer processing method of implementation form 1 of the present invention is described according to the drawings. FIG. 1 is a flow chart showing the processing procedure of the wafer processing method of implementation form 1. The wafer processing method of implementation form 1 is a method for processing a wafer 100 as described later, and as shown in FIG. 1 , it has a passivation film processing step 1001, a pattern layer processing step 1002, and a substrate processing step 1003.
圖2是顯示實施形態1之晶圓之加工方法的加工對象即晶圓100的立體圖。圖3是圖2之晶圓100的剖面圖。如圖2以及圖3所示,實施形態1之晶圓之加工方法的加工對象即晶圓100在基板110的正面111形成有型樣層120、與覆蓋型樣層120之鈍化膜130。基板110是例如,以矽為母材之圓板狀的半導體晶圓或光器件晶圓等。基板110的母材在本發明中並非限定於此,亦可為藍寶石、碳化矽(SiC)、砷化鎵等。如圖2所示,基板110在平坦的正面111的藉由形成為格子狀之複數條分割預定線112所區劃出之區域中形成有晶片尺寸的器件區域部113。FIG. 2 is a perspective view of the wafer 100 that is the object to be processed in the wafer processing method according to the first embodiment. FIG. 3 is a cross-sectional view of the wafer 100 of FIG. 2 . As shown in FIGS. 2 and 3 , a pattern layer 120 and a passivation film 130 covering the pattern layer 120 are formed on the front surface 111 of the substrate 110 on the wafer 100 , which is the object of the wafer processing method in Embodiment 1. The substrate 110 is, for example, a disc-shaped semiconductor wafer or an optical device wafer made of silicon as a base material. The base material of the substrate 110 is not limited to this in the present invention, and may also be sapphire, silicon carbide (SiC), gallium arsenide, etc. As shown in FIG. 2 , the substrate 110 has a wafer-sized device region 113 formed in a region defined by a plurality of planned division lines 112 formed in a grid shape on the flat front surface 111 .
晶圓100形成有複數個器件晶片(參照圖2),前述複數個器件晶片是分別包含基板110的各器件區域部113的部分、與已形成在各器件區域部113上之各型樣層120的部分以及各鈍化膜130的部分而構成。The wafer 100 is formed with a plurality of device wafers (see FIG. 2 ). The plurality of device wafers include portions of each device region 113 of the substrate 110 and various pattern layers 120 formed on each device region 113 . and the parts of each passivation film 130 .
在實施形態1中,型樣層120是電子電路、電極、檢查用或評價用元件(測試元件群,Test Element Group,TEG)、積體電路(Integrated Circuit,IC)等的金屬型樣層。型樣層120的厚度為10μm以上且100μm以下,且如圖3所示,比鈍化膜130更充分地厚。在已將晶圓100分割成複數個器件晶片時,型樣層120會有厚度變得和基板110相同程度或比基板110更厚之情況。In the first embodiment, the pattern layer 120 is a metal pattern layer of an electronic circuit, an electrode, an inspection or evaluation element (test element group, TEG), an integrated circuit (IC), etc. The thickness of the pattern layer 120 is greater than 10 μm and less than 100 μm, and as shown in FIG. 3 , it is substantially thicker than the passivation film 130. When the wafer 100 is divided into a plurality of device chips, the pattern layer 120 may have a thickness equal to or greater than that of the substrate 110.
鈍化膜130在實施形態1中雖然是聚醯亞胺膜,但在本發明中並非限定於此,亦可為氧化膜或氮化膜。鈍化膜130的厚度為2μm以上且10μm以下,而比型樣層120更充分地薄。鈍化膜130並非在基板加工步驟1003後去除之暫時的保護膜,而是為了保護構成器件晶片之型樣層120或基板110的器件區域部113的部分而被保留在已將晶圓100分割而製造出之複數個器件晶片的上表面。亦即,較佳的是,鈍化膜130為即使在已將晶圓100分割成複數個器件晶片時也不會剝落。Although the passivation film 130 is a polyimide film in the first embodiment, the present invention is not limited thereto and may be an oxide film or a nitride film. The thickness of the passivation film 130 is greater than 2 μm and less than 10 μm, and is substantially thinner than the pattern layer 120. The passivation film 130 is not a temporary protective film to be removed after the substrate processing step 1003, but is retained on the upper surface of a plurality of device chips manufactured by dividing the wafer 100 in order to protect the pattern layer 120 constituting the device chip or the device region 113 of the substrate 110. That is, it is preferable that the passivation film 130 does not peel off even when the wafer 100 is divided into a plurality of device chips.
在實施形態1中,晶圓100雖然如圖2所示,在基板110的正面111的背側之背面114貼附有支撐構件141,且在支撐構件141的外緣部裝設有環狀的框架142,但在本發明中並非限定於此。支撐構件141可使用黏著膠帶或片材,前述黏著膠帶具有基材層與積層於基材層之黏著層,其中前述基材層具有可撓性與非黏著性,前述黏著層具有可撓性與黏著性,前述片材是以不具有黏著層之熱可塑性的樹脂所構成。支撐構件141在為不具有黏著性之熱可塑性樹脂片材的情況下,宜為聚烯烴系片材、聚乙烯片材、聚丙烯片材、聚苯乙烯片材,且以熱壓接方式貼附於框架142或晶圓100。支撐構件141毋須從一開始就為片材形狀,亦可將粉體或液體供給到晶圓100的背面104(基板110的背面114),並藉由熱壓接或推壓、旋轉塗布來成形為覆蓋晶圓100的背面104之片狀。In the first embodiment, as shown in FIG. 2 , the wafer 100 has a supporting member 141 attached to the back surface 114 of the back side of the front surface 111 of the substrate 110, and a ring-shaped frame 142 is installed on the outer edge of the supporting member 141, but the present invention is not limited thereto. The supporting member 141 may be made of an adhesive tape or a sheet, wherein the adhesive tape has a base layer and an adhesive layer laminated on the base layer, wherein the base layer has flexibility and non-adhesion, the adhesive layer has flexibility and adhesion, and the sheet is made of a thermoplastic resin without an adhesive layer. When the supporting member 141 is a non-adhesive thermoplastic resin sheet, it is preferably a polyolefin sheet, a polyethylene sheet, a polypropylene sheet, or a polystyrene sheet, and is attached to the frame 142 or the wafer 100 by heat pressing. The supporting member 141 does not need to be in the form of a sheet from the beginning, and a powder or liquid may be supplied to the back side 104 of the wafer 100 (the back side 114 of the substrate 110), and formed into a sheet covering the back side 104 of the wafer 100 by heat pressing or by pushing or rotary coating.
圖4是說明圖1之鈍化膜加工步驟1001的剖面圖。如圖4所示,鈍化膜加工步驟1001是沿著分割預定線112以第1輸出來照射雷射光線11,而在鈍化膜130形成第1加工溝151之步驟。FIG. 4 is a cross-sectional view illustrating the passivation film processing step 1001 of FIG. 1 . As shown in FIG. 4 , the passivation film processing step 1001 is a step of irradiating the laser beam 11 with the first output along the planned division line 112 to form the first processing groove 151 in the passivation film 130 .
在鈍化膜加工步驟1001中,如圖4所示,是一邊藉由雷射照射器10,將對鈍化膜130具有吸收性之波長的雷射光線11以第1輸出來朝向晶圓100的形成有鈍化膜130之側的面(晶圓100的正面101、鈍化膜130的露出面131)照射,一邊藉由未圖示之驅動源使晶圓100相對於雷射照射器10沿著分割預定線112相對地進給移動,藉此以雷射光線11沿著分割預定線112對鈍化膜130進行雷射加工(所謂的燒蝕加工),來沿著分割預定線112去除鈍化膜130,而形成貫通鈍化膜130且到達型樣層120之深度的第1加工溝151。In the passivation film processing step 1001, as shown in FIG. 4, a laser beam 11 having a wavelength that is absorbent to the passivation film 130 is irradiated with a first output toward the side of the wafer 100 on which the passivation film 130 is formed (the front side 101 of the wafer 100, the exposed side 131 of the passivation film 130), while a driving source (not shown) is used to drive the wafer 100 to passivate the film 130. The circle 100 is fed and moved relative to the laser irradiator 10 along the predetermined dividing line 112, whereby the laser beam 11 performs laser processing (so-called ablation processing) on the passivation film 130 along the predetermined dividing line 112, thereby removing the passivation film 130 along the predetermined dividing line 112, and forming a first processing groove 151 that penetrates the passivation film 130 and reaches the depth of the pattern layer 120.
實施形態1之晶圓之加工方法由於是藉由雷射光線11的照射來加工鈍化膜130,因此變得毋須以微影製程(lithography)方式來對鈍化膜130進行加工,所以可以減低和鈍化膜130的加工有關之成本。Since the wafer processing method of Embodiment 1 processes the passivation film 130 by irradiating the laser light 11, it is no longer necessary to process the passivation film 130 by a lithography process, so the passivation and passivation costs can be reduced. There are costs associated with the processing of membrane 130.
圖5是說明圖1之型樣層加工步驟1002的剖面圖。如圖5所示,型樣層加工步驟1002是以下之步驟:沿著在鈍化膜加工步驟1001中所形成之第1加工溝151來照射比第1輸出更大之第2輸出的雷射光線21,而在型樣層120形成第2加工溝152。Fig. 5 is a cross-sectional view illustrating the pattern layer processing step 1002 of Fig. 1. As shown in Fig. 5, the pattern layer processing step 1002 is a step of irradiating the laser beam 21 having a second output greater than the first output along the first processing groove 151 formed in the passivation film processing step 1001 to form a second processing groove 152 in the pattern layer 120.
在型樣層加工步驟1002中,如圖5所示,是一邊藉由雷射照射器20,以比第1輸出更大之第2輸出,來將對型樣層120具有吸收性之波長的雷射光線21,朝向在已形成於晶圓100之第1加工溝151的底面露出之型樣層120照射,一邊藉由未圖示之驅動源使晶圓100相對於雷射照射器20沿著第1加工溝151的延伸方向相對地進給移動,藉此以雷射光線21沿著第1加工溝151的延伸方向來對型樣層120進行雷射加工(所謂的燒蝕加工),來沿著第1加工溝151的延伸方向去除型樣層120,而形成從第1加工溝151的底面進一步貫通型樣層120而到達基板110的正面111之深度的第2加工溝152。再者,第1加工溝151的延伸方向是沿著分割預定線112之方向。In the pattern layer processing step 1002, as shown in FIG. 5, the laser irradiator 20 uses a second output larger than the first output to emit wavelengths that are absorptive to the pattern layer 120. The laser beam 21 is irradiated toward the pattern layer 120 exposed on the bottom surface of the first processing trench 151 formed in the wafer 100, while the wafer 100 is moved along the laser irradiator 20 by a driving source not shown in the figure. The pattern layer 120 is relatively fed and moved along the extending direction of the first processing groove 151, thereby performing laser processing (so-called ablation processing) on the pattern layer 120 along the extending direction of the first processing groove 151 with the laser beam 21. The pattern layer 120 is removed along the extending direction of the first processing trench 151 to form a second processing trench 152 with a depth that extends from the bottom surface of the first processing trench 151 and further penetrates the pattern layer 120 to the front surface 111 of the substrate 110 . Furthermore, the extending direction of the first processing groove 151 is along the direction along the planned division line 112 .
在此,因為在鈍化膜加工步驟1001中加工之鈍化膜130為聚醯亞胺膜、氧化膜或氮化膜,且比型樣層120更薄,所以若照射平均輸出為可在型樣層120形成第2加工溝152之雷射光線,會受到熱損害而容易引發剝離或劣化、損傷,所以必須藉由比適合於對型樣層120形成第2加工溝152(型樣層120的分割)的平均輸出更小之平均輸出的雷射光線的照射來進行加工。另一方面,因為在型樣層加工步驟1002中加工之型樣層120,包含電子電路、電極、檢查用或評價用元件、積體電路等之包含金屬型樣層的配線構造,若以比適合於對鈍化膜130形成第1加工溝151(鈍化膜130的分割)的平均輸出更小之平均輸出的雷射光線來照射,並無法做到第2加工溝152的形成,所以必須藉由比適合於鈍化膜130的分割的平均輸出更大之平均輸出的雷射光線之照射來加工。因此,實施形態1之晶圓之加工方法藉由具備對鈍化膜130進行加工之鈍化膜加工步驟1001、與對型樣層120進行加工之型樣層加工步驟1002之2個步驟,且變更在2個步驟中照射之雷射光線,可既抑制對鈍化膜130之熱損害而抑制剝離或劣化、損傷,並且可實現對型樣層120之良好的品質的加工。Here, since the passivation film 130 processed in the passivation film processing step 1001 is a polyimide film, an oxide film or a nitride film, and is thinner than the pattern layer 120, if the irradiation average output is a laser light that can form the second processing groove 152 in the pattern layer 120, it will be thermally damaged and easily cause peeling or deterioration or damage. Therefore, it is necessary to perform processing by irradiating with a laser light with an average output smaller than the average output suitable for forming the second processing groove 152 (division of the pattern layer 120) in the pattern layer 120. On the other hand, because the pattern layer 120 processed in the pattern layer processing step 1002 includes a wiring structure including a metal pattern layer such as an electronic circuit, an electrode, an inspection or evaluation element, and an integrated circuit, if it is irradiated with a laser beam with an average output smaller than the average output suitable for forming the first processing groove 151 (division of the passivation film 130) on the passivation film 130, the second processing groove 152 cannot be formed. Therefore, it is necessary to process it by irradiating with a laser beam with an average output larger than the average output suitable for dividing the passivation film 130. Therefore, the wafer processing method of implementing form 1 includes two steps, namely, a passivation film processing step 1001 for processing the passivation film 130 and a pattern layer processing step 1002 for processing the pattern layer 120, and by changing the laser light irradiated in the two steps, it is possible to suppress thermal damage to the passivation film 130 and inhibit peeling, deterioration, or damage, and achieve good quality processing of the pattern layer 120.
因此,在實施形態1之晶圓之加工方法中,在鈍化膜加工步驟1001中所照射之雷射光線11的平均輸出即第1輸出,比在型樣層加工步驟1002中所照射之雷射光線21的平均輸出即第2輸出更小。或者,在鈍化膜加工步驟1001中所照射之雷射光線11的每1光斑的能量密度,比在型樣層加工步驟1002中所照射之雷射光線21的每1光斑的能量密度更小。在實施形態1中,由於鈍化膜130是較不耐熱且有因熱而熔融之疑慮的聚醯亞胺膜,因此藉由像這樣的平均輸出較小之雷射光線11的使用,不僅抑制聚醯亞胺膜的剝離或劣化、損傷也可以抑制熔融,所以成為抑制對鈍化膜130之熱損害的作用效果更加顯著之實施形態。又,即使在鈍化膜130為氧化膜或氮化膜的情況下,也可以抑制氧化膜或氮化膜的剝離或劣化、損傷。在實施形態1中,由於型樣層120的厚度厚到10μm以上且100μm以下,因此藉由使用像這樣的平均輸出較大之雷射光線21,而成為可實現對型樣層120之良好的品質的加工之作用效果更加顯著之實施形態。再者,在實施形態1中,雷射光線11的平均輸出(第1輸出)為例如1.1W,雷射光線21的平均輸出(第2輸出)為例如6.4W。Therefore, in the wafer processing method of Embodiment 1, the average output of the laser light 11 irradiated in the passivation film processing step 1001, that is, the first output, is higher than that of the laser irradiated in the pattern layer processing step 1002. The average output of the light ray 21, that is, the second output is smaller. Alternatively, the energy density per spot of the laser light 11 irradiated in the passivation film processing step 1001 is smaller than the energy density per spot of the laser light 21 irradiated in the pattern layer processing step 1002 . In Embodiment 1, since the passivation film 130 is a polyimide film that is relatively heat-resistant and may melt due to heat, the use of the laser beam 11 with a small average output not only suppresses polyimide Melting can also be suppressed even if the imide film is peeled off, deteriorated, or damaged, so this embodiment has a more significant effect of suppressing thermal damage to the passivation film 130 . Furthermore, even when the passivation film 130 is an oxide film or a nitride film, peeling, deterioration, and damage of the oxide film or the nitride film can be suppressed. In Embodiment 1, since the thickness of the pattern layer 120 is 10 μm or more and 100 μm or less, by using the laser beam 21 with such a large average output, it is possible to achieve good alignment of the pattern layer 120 . A form of implementation in which the effect of quality processing is more significant. Furthermore, in Embodiment 1, the average output (first output) of the laser beam 11 is, for example, 1.1W, and the average output (second output) of the laser beam 21 is, for example, 6.4W.
較佳的是,雷射光線11為脈衝狀,且具有皮秒或飛秒的範圍的脈衝寬度。在此,皮秒或飛秒的範圍的脈衝寬度,在實施形態1中是指10 -15秒以上且10 -12秒以下之脈衝寬度。實施形態1之晶圓之加工方法是藉由像這樣地將雷射光線11的脈衝寬度設為皮秒或飛秒的範圍,而可以進一步抑制在鈍化膜加工步驟1001中的對鈍化膜130之熱損害。再者,雷射光線11的脈衝寬度小於10 -15秒之情況,以現有技術是有困難的,另一方面,雷射光線11的脈衝寬度比10 -12秒更大之情況,會有導致對鈍化膜130之熱損害變大之疑慮。 Preferably, the laser light 11 is pulse-shaped and has a pulse width in the range of picoseconds or femtoseconds. Here, the pulse width in the range of picoseconds or femtoseconds means a pulse width of 10-15 seconds or more and 10-12 seconds or less in Embodiment 1. The wafer processing method of Embodiment 1 sets the pulse width of the laser light 11 to a range of picoseconds or femtoseconds, thereby further suppressing damage to the passivation film 130 in the passivation film processing step 1001. Thermal damage. Furthermore, when the pulse width of the laser light 11 is less than 10 -15 seconds, it is difficult with the existing technology. On the other hand, when the pulse width of the laser light 11 is greater than 10 -12 seconds, it may cause There is a concern that thermal damage to the passivation film 130 will become greater.
又,較佳的是,雷射光線11的重複頻率比雷射光線21更大。又,較佳的是,雷射光線11的聚光點對晶圓100之進給速度比雷射光線21更快。實施形態1之晶圓之加工方法是藉由像這樣地將雷射光線11的重複頻率設得比雷射光線21更大,且將雷射光線11的聚光點的進給速度設得比雷射光線21更快,而進一步既抑制在鈍化膜加工步驟1001中的對鈍化膜130之熱損害,並且可實現對型樣層120之良好的品質的加工。又,在實施形態1中,雷射光線11的重複頻率為例如3000kHz,且雷射光線21的重複頻率為例如800kHz。又,在實施形態1中,雷射光線11的聚光點的進給速度為例如1000mm/s,且雷射光線21的聚光點的進給速度為例如850mm/s。Furthermore, it is preferable that the repetition frequency of the laser light 11 is greater than that of the laser light 21 . Furthermore, it is preferable that the feeding speed of the wafer 100 through the focusing point of the laser light 11 is faster than that of the laser light 21 . The wafer processing method of Embodiment 1 is to set the repetition frequency of the laser light 11 to be greater than that of the laser light 21, and to set the feed speed of the focusing point of the laser light 11 to be greater than The laser light 21 is faster, thereby further suppressing thermal damage to the passivation film 130 in the passivation film processing step 1001, and achieving good quality processing of the pattern layer 120. Furthermore, in Embodiment 1, the repetition frequency of the laser light 11 is, for example, 3000 kHz, and the repetition frequency of the laser light 21 is, for example, 800 kHz. Furthermore, in Embodiment 1, the feeding speed of the focusing point of the laser beam 11 is, for example, 1000 mm/s, and the feeding speed of the focusing point of the laser beam 21 is, for example, 850 mm/s.
又,在鈍化膜加工步驟1001中所形成之第1加工溝151的寬度161,比在型樣層加工步驟1002中所形成之第2加工溝152的寬度162更寬。因此,實施形態1之晶圓之加工方法可以抑制在型樣層加工步驟1002中為了形成第2加工溝152而照射之雷射光線21,不小心照射第1加工溝151的邊緣或從第1加工溝151超出而照射鈍化膜130,使鈍化膜130剝離或劣化或損傷之情形。In addition, the width 161 of the first processing groove 151 formed in the passivation film processing step 1001 is wider than the width 162 of the second processing groove 152 formed in the pattern layer processing step 1002. Therefore, the wafer processing method of Embodiment 1 can prevent the laser beam 21 irradiated to form the second processing groove 152 in the pattern layer processing step 1002 from accidentally irradiating the edge of the first processing groove 151 or from the first processing groove 152 . The processing groove 151 exceeds and irradiates the passivation film 130, causing the passivation film 130 to peel off, deteriorate or be damaged.
圖6是說明圖1之基板加工步驟1003的剖面圖。如圖6所示,基板加工步驟1003是沿著第2加工溝152來加工基板110之步驟。再者,第2加工溝152的延伸方向是沿著分割預定線112之方向。Fig. 6 is a cross-sectional view illustrating the substrate processing step 1003 of Fig. 1. As shown in Fig. 6, the substrate processing step 1003 is a step of processing the substrate 110 along the second processing groove 152. Furthermore, the extending direction of the second processing groove 152 is along the direction of the predetermined dividing line 112.
在基板加工步驟1003中,是藉由各種方法,而沿著第2加工溝152的延伸方向,亦即沿著分割預定線112來加工基板110,而從第2加工溝152的底面進一步往厚度方向的下方對基板110持續挖掘來形成第3加工溝153(參照圖6)。在實施形態1中為:在基板加工步驟1003中,是進一步使第3加工溝153的底面到達基板110的背面114(晶圓100的背面104)而貫通基板110,藉此將基板110沿著分割預定線112分割,來分割晶圓100,並製造複數個器件晶片。In the substrate processing step 1003, the substrate 110 is processed along the extension direction of the second processing groove 152, that is, along the predetermined dividing line 112, by various methods, and the substrate 110 is further excavated downward in the thickness direction from the bottom surface of the second processing groove 152 to form a third processing groove 153 (refer to FIG. 6). In the first embodiment, in the substrate processing step 1003, the bottom surface of the third processing groove 153 is further made to reach the back surface 114 of the substrate 110 (the back surface 104 of the wafer 100) and penetrate the substrate 110, thereby dividing the substrate 110 along the predetermined dividing line 112, dividing the wafer 100, and manufacturing a plurality of device chips.
在實施形態1中,是在基板加工步驟1003中形成寬度163比第2加工溝152的寬度162更狹窄之第3加工溝153。因此,實施形態1之晶圓之加工方法可以抑制在基板加工步驟1003中形成第3加工溝153之時,不小心加工第1加工溝151的邊緣或從第1加工溝151超出而加工鈍化膜130,使鈍化膜130剝離或劣化或損傷之情形,並且可以抑制不小心加工第2加工溝152的邊緣或從第2加工溝152超出而加工型樣層120,使型樣層120剝離或劣化或損傷之情形。In the first embodiment, the third processing groove 153 having a width 163 narrower than the width 162 of the second processing groove 152 is formed in the substrate processing step 1003. Therefore, the wafer processing method of the first embodiment can prevent the passivation film 130 from being peeled off, deteriorated or damaged by accidentally processing the edge of the first processing groove 151 or processing beyond the first processing groove 151 when the third processing groove 153 is formed in the substrate processing step 1003, and can also prevent the pattern layer 120 from being peeled off, deteriorated or damaged by accidentally processing the edge of the second processing groove 152 or processing beyond the second processing groove 152.
在實施形態1中,基板加工步驟1003是以例如以下所說明之第1例、第2例、第3例、第4例以及第5例的方法來實施。再者,在本發明中並不限定於此,基板加工步驟1003可設成組合第1例~第5例的方法的一部分等來實施。In the first embodiment, the substrate processing step 1003 is implemented by the methods of the first, second, third, fourth and fifth examples described below. The present invention is not limited thereto, and the substrate processing step 1003 may be implemented by combining a part of the methods of the first to fifth examples.
基板加工步驟1003在第1例的方法中,是藉由電漿蝕刻來實施。具體而言,在基板加工步驟1003的第1例中,具備側面保護膜堆積步驟與深挖加工步驟,前述側面保護膜堆積步驟是以側面保護膜覆蓋第1加工溝151、第2加工溝152以及第3加工溝153的側面,前述深挖加工步驟是藉由電漿蝕刻,進一步往晶圓100的厚度方向的下方,對第2加工溝152的底面或第3加工溝153的底面持續挖掘。In the method of the first example, the substrate processing step 1003 is performed by plasma etching. Specifically, the first example of the substrate processing step 1003 includes a side protection film deposition step of covering the first processing trench 151 and the second processing trench 152 with the side protection film and a deep digging processing step. As well as the side of the third processing trench 153, the aforementioned deep-drilling processing step is to further dig downward in the thickness direction of the wafer 100 through plasma etching to continue to dig the bottom surface of the second processing trench 152 or the bottom surface of the third processing trench 153. .
側面保護膜堆積步驟是從晶圓100的正面101側供給預定的電漿氣體,並藉由所供給之電漿氣體來堆積側面保護膜之步驟。深挖加工步驟是在側面保護膜堆積步驟中堆積側面保護膜之後,從晶圓100的正面101側供給和側面保護膜堆積步驟不同之預定的電漿氣體,並藉由所供給之電漿氣體來去除已堆積於第3加工溝153的底面之側面保護膜,而對第3加工溝153的底面之基板110進行電漿蝕刻來對第3加工溝153進行深挖加工之步驟。The side protection film deposition step is a step of supplying a predetermined plasma gas from the front surface 101 side of the wafer 100 and depositing a side protection film using the supplied plasma gas. In the deep digging processing step, after the side protection film is deposited in the side protection film deposition step, a predetermined plasma gas different from that in the side protection film deposition step is supplied from the front 101 side of the wafer 100, and the supplied plasma gas is used The step of removing the side protective film accumulated on the bottom surface of the third processing trench 153 and performing plasma etching on the substrate 110 on the bottom surface of the third processing trench 153 to deeply dig the third processing trench 153.
在實施形態1中,在基板加工步驟1003的第1例中,是藉由實施以別的工序來交互地重複進行側面保護膜堆積步驟與深挖加工步驟之所謂的波希法(Bosch Process),而讓第1加工溝151、第2加工溝152以及第3加工溝153的側面之蝕刻量變得比第3加工溝153的底面之蝕刻量更充分地小,來形成較高的長寬比之第3加工溝153。再者,在本發明中並不限定於此,在基板加工步驟1003的第1例中,亦可將側面保護膜堆積步驟與電漿蝕刻步驟同時並行地實施,而形成較高的長寬比之第3加工溝153。In Embodiment 1, in the first example of the substrate processing step 1003, the so-called Bosch Process is performed by alternately repeating the side protection film deposition step and the deep digging processing step in other steps. , so that the etching amount on the side surfaces of the first processing groove 151, the second processing groove 152, and the third processing groove 153 becomes sufficiently smaller than the etching amount on the bottom surface of the third processing groove 153 to form a higher aspect ratio. The third processing ditch 153. Furthermore, the present invention is not limited to this. In the first example of the substrate processing step 1003, the side protection film deposition step and the plasma etching step can also be performed simultaneously and in parallel to form a higher aspect ratio. The third processing ditch 153.
基板加工步驟1003在第2例的方法中,是藉由使用了切削刀片之切削加工來實施。具體而言,在基板加工步驟1003的第2例中,是在使裝設於預定的主軸的前端且被主軸施加了繞著沿Y軸方向的軸心之旋轉動作的比寬度162更薄之切削刀片,藉由預定的升降單元沿著Z軸方向移動而從第2加工溝152的底面朝基板110切入預定的深度後,藉由預定的驅動源使主軸(切削刀片)相對於晶圓100沿著第2加工溝152的延伸方向相對地進給移動,藉此以切削刀片沿著分割預定線112來對基板110進行切削加工,而沿著分割預定線112形成貫通基板110且到達基板110的背面114之深度的第3加工溝153,來沿著分割預定線112分割基板110。In the method of the second example, the substrate processing step 1003 is performed by cutting using a cutting blade. Specifically, in the second example of the substrate processing step 1003, a cutting blade thinner than the width 162, which is mounted on the front end of a predetermined spindle and is applied by the spindle to a rotational motion about the axis in the Y-axis direction, is moved in the Z-axis direction by a predetermined lifting unit to cut into the substrate 110 from the bottom surface of the second processing groove 152 to a predetermined depth, and then the spindle (cutting blade) is moved by a predetermined driving source. The cutting blade 152 is fed and moved relative to the wafer 100 along the extension direction of the second processing groove 152, so that the cutting blade cuts the substrate 110 along the predetermined splitting line 112, and forms a third processing groove 153 along the predetermined splitting line 112 that penetrates the substrate 110 and reaches the back side 114 of the substrate 110, thereby splitting the substrate 110 along the predetermined splitting line 112.
基板加工步驟1003在第3例的方法中,是藉由對晶圓100的基板110具有穿透性之波長的雷射光線的照射來實施。具體而言,在基板加工步驟1003的第3例中,是一邊藉由預定的雷射照射器,將對晶圓100的基板110具有穿透性之波長的雷射光線,朝向在已形成於晶圓100之第2加工溝152的底面露出之基板110來照射,一邊藉由未圖示之驅動源使晶圓100相對於此雷射照射器沿著分割預定線112來相對地進給移動,藉此藉由此雷射光線沿著分割預定線112在基板110的內部形成改質層、及以改質層為起點而朝向正面111以及背面114伸展之裂隙,並將此改質層或裂隙當作第3加工溝153,來沿著分割預定線112分割基板110。在此,所謂的改質層是指密度、折射率、機械強度或其他的物理特性變得與周圍之該特性不同之狀態的區域,且可以例示出熔融處理區域、裂隙(crack)區域、絕緣破壞區域、折射率變化區域、以及這些區域所混合存在之區域等。In the method of the third example, the substrate processing step 1003 is performed by irradiating the substrate 110 of the wafer 100 with laser light having a wavelength that is penetrating. Specifically, in the third example of the substrate processing step 1003, a predetermined laser irradiator is used to irradiate the laser light with a wavelength that is penetrating to the substrate 110 of the wafer 100 toward the substrate 110 formed on the wafer 100. The bottom surface of the second processing trench 152 of the wafer 100 is exposed to the substrate 110 for irradiation, while the wafer 100 is relatively advanced and moved along the planned division line 112 with respect to the laser irradiator by a driving source (not shown). , whereby the laser light forms a modified layer inside the substrate 110 along the planned dividing line 112, and cracks starting from the modified layer and extending toward the front 111 and the back 114, and the modified layer or The crack serves as the third processing groove 153 and divides the substrate 110 along the planned dividing line 112 . Here, the modified layer refers to a region in which density, refractive index, mechanical strength, or other physical properties are different from those of the surroundings, and examples thereof include a melt-processed region, a crack region, and an insulating layer. Damaged areas, refractive index change areas, and areas where these areas are mixed, etc.
在第4例的方法中,基板加工步驟1003除了和第3例同樣之雷射光線的照射以外,還進一步藉由基板110的背面114側的磨削加工來實施。具體而言,在基板加工步驟1003的第4例中,是和第3例同樣地於照射雷射光線而形成改質層與裂隙之後,使裝設於預定的主軸的前端且被主軸施加了繞著沿Z軸方向的軸心之旋轉動作的呈環狀地配置有磨削磨石之磨削輪,藉由預定的升降單元而沿著Z軸方向移動,並接觸於已定位在下方之晶圓100的基板110的背面114側來進行推壓,藉此以磨削磨石將基板110磨削至預定厚度並使第3加工溝153(裂隙)到達背面114側,而將基板110沿著分割預定線112分割。In the method of the fourth example, the substrate processing step 1003 is performed by grinding the back surface 114 of the substrate 110 in addition to the same irradiation of laser light as in the third example. Specifically, in the fourth example of the substrate processing step 1003, like the third example, after the modified layer and cracks are formed by irradiating laser light, they are mounted on the front end of a predetermined spindle and are applied by the spindle. The grinding wheel with the grinding stone arranged in an annular shape around the axis along the Z-axis direction moves along the Z-axis direction by a predetermined lifting unit and comes into contact with the grinding wheel positioned below. The back surface 114 side of the substrate 110 of the wafer 100 is pressed, whereby the substrate 110 is ground to a predetermined thickness with a grinding stone and the third processing groove 153 (crack) reaches the back surface 114 side, and the substrate 110 is moved along the back surface 114 of the wafer 100 . It is divided along the planned dividing line 112.
在第5例的方法中,基板加工步驟1003是藉由對晶圓100的基板110具有吸收性之波長的雷射光線的照射來實施。具體而言,在基板加工步驟1003的第5例中,是一邊藉由預定的雷射照射器,將對晶圓100的基板110具有吸收性之波長的雷射光線,朝向在已形成於晶圓100之第2加工溝152的底面露出之基板110來照射,一邊藉由未圖示之驅動源使晶圓100相對於此雷射照射器沿著分割預定線112相對地進給移動,藉此以此雷射光線沿著分割預定線112對基板110進行雷射加工(所謂的燒蝕加工),而形成沿著分割預定線112貫通基板110且到達基板110的背面114之深度的第3加工溝153,來將基板110沿著分割預定線112分割。In the method of the fifth example, the substrate processing step 1003 is performed by irradiating the substrate 110 of the wafer 100 with laser light having an absorptive wavelength. Specifically, in the fifth example of the substrate processing step 1003, a predetermined laser irradiator is used to direct laser light of a wavelength that has an absorptive wavelength toward the substrate 110 of the wafer 100 that has been formed on the wafer. The substrate 110 with the bottom surface of the second processing groove 152 of the circle 100 exposed is irradiated, while the wafer 100 is relatively advanced and moved along the planned dividing line 112 with respect to the laser irradiator by a driving source not shown in the figure. In this way, the substrate 110 is subjected to laser processing (so-called ablation processing) with the laser light along the planned division line 112 to form a third layer that penetrates the substrate 110 along the planned division line 112 and reaches the depth of the back surface 114 of the substrate 110 . The groove 153 is processed to divide the substrate 110 along the planned dividing line 112 .
具有如以上之構成的實施形態1之晶圓之加工方法,由於是在以第1輸出的雷射光線11來加工鈍化膜130之後,以比第1輸出更大之第2輸出的雷射光線21來加工型樣層120,因此會發揮如下之作用效果:既抑制對鈍化膜130之熱損害而抑制剝離或劣化、損傷,並且可以做到對型樣層120之良好的品質的加工,而可以品質良好地對在型樣層120上積層有鈍化膜130之晶圓100進行加工。The wafer processing method of Embodiment 1 having the above configuration is to process the passivation film 130 with the laser beam 11 of the first output, and then use the laser beam of the second output which is larger than the first output. 21 to process the pattern layer 120, so the following effects will be exerted: not only suppressing thermal damage to the passivation film 130 to suppress peeling, deterioration, and damage, but also achieving good quality processing of the pattern layer 120, and The wafer 100 in which the passivation film 130 is laminated on the pattern layer 120 can be processed with high quality.
又,實施形態1之晶圓之加工方法,由於基板加工步驟1003藉由分割基板110,而形成複數個器件晶片,因此即使在已將晶圓100分割成複數個器件晶片時,仍然可以適宜地保留鈍化膜130,以用於保護構成器件晶片之型樣層120或基板110的器件區域部113之部分。In addition, in the wafer processing method of embodiment 1, since the substrate processing step 1003 forms a plurality of device chips by dividing the substrate 110, even when the wafer 100 has been divided into a plurality of device chips, the passivation film 130 can still be appropriately retained to protect the pattern layer 120 constituting the device chip or part of the device area 113 of the substrate 110.
又,實施形態1之晶圓之加工方法,由於鈍化膜130為聚醯亞胺,因此藉由平均輸出較小之雷射光線11的使用,不僅會抑制較不耐熱且具有會因熱而熔融之疑慮的聚醯亞胺膜的剝離或劣化、損傷,還可以抑制熔融,所以成為抑制對鈍化膜130之熱損害的作用效果更加顯著之實施形態。In addition, in the wafer processing method of Embodiment 1, since the passivation film 130 is made of polyimide, the use of the laser beam 11 with a smaller average output not only suppresses the risk of being less heat-resistant but also melting due to heat. It can also suppress melting of the polyimide film that is suspected of peeling off, deteriorating, or being damaged, so this embodiment has a more significant effect of suppressing thermal damage to the passivation film 130 .
又,實施形態1之晶圓之加工方法由於鈍化膜加工步驟1001使用具有皮秒或飛秒的範圍的脈衝寬度之雷射光線11,因此可以進一步抑制在鈍化膜加工步驟1001中的對鈍化膜130之熱損害。In addition, in the wafer processing method of embodiment 1, since the passivation film processing step 1001 uses the laser beam 11 having a pulse width in the picosecond or femtosecond range, the thermal damage to the passivation film 130 in the passivation film processing step 1001 can be further suppressed.
又,實施形態1之晶圓之加工方法,由於第1加工溝151的寬度161比第2加工溝152的寬度162更寬,因此可以抑制在型樣層加工步驟1002中所照射之雷射光線21不小心照射第1加工溝151的邊緣或從第1加工溝151超出而照射鈍化膜130,使鈍化膜130剝離或劣化或損傷之情形。In addition, in the wafer processing method of embodiment 1, since the width 161 of the first processing groove 151 is wider than the width 162 of the second processing groove 152, it is possible to prevent the laser light 21 irradiated in the pattern layer processing step 1002 from accidentally irradiating the edge of the first processing groove 151 or extending beyond the first processing groove 151 to irradiate the passivation film 130, thereby preventing the passivation film 130 from being peeled off, deteriorated, or damaged.
[實施形態2] 依據圖式來說明本發明之實施形態2之晶圓之加工方法。圖7、圖8以及圖9,任一圖都是說明實施形態2之晶圓之加工方法的鈍化膜加工步驟1001的剖面圖。圖10、圖11以及圖12,任一圖都是說明實施形態2之晶圓之加工方法的型樣層加工步驟1002的剖面圖。圖7~圖12對和實施形態1相同的部分會附加相同符號而省略說明。 [Embodiment 2] The wafer processing method according to Embodiment 2 of the present invention will be described based on the drawings. Each of FIGS. 7, 8 and 9 is a cross-sectional view illustrating the passivation film processing step 1001 of the wafer processing method according to Embodiment 2. Each of FIGS. 10, 11, and 12 is a cross-sectional view illustrating the pattern layer processing step 1002 of the wafer processing method according to Embodiment 2. In FIGS. 7 to 12 , the same parts as those in Embodiment 1 are denoted by the same reference numerals, and descriptions thereof are omitted.
實施形態2之晶圓之加工方法是在實施形態1中,分別變更了鈍化膜加工步驟1001以及型樣層加工步驟1002之構成。The wafer processing method of the implementation form 2 is obtained by changing the structures of the passivation film processing step 1001 and the pattern layer processing step 1002 in the implementation form 1.
實施形態2中的鈍化膜加工步驟1001,是在實施形態1中的鈍化膜加工步驟1001中變更成以下之構成:於雷射光線11的照射之前,如圖7所示,在晶圓100的正面101(鈍化膜130的露出面131)形成上表面保護膜170,且如圖8所示,照射雷射光線11,而以雷射光線11沿著分割預定線112對上表面保護膜170以及鈍化膜130進行雷射加工來形成第1加工溝151,且在第1加工溝151的形成後,如圖9所示地去除上表面保護膜170。The passivation film processing step 1001 in the implementation form 2 is changed into the following structure in the passivation film processing step 1001 in the implementation form 1: before the irradiation of the laser light 11, as shown in FIG. 7, the upper surface protective film 170 is formed on the front surface 101 of the wafer 100 (the exposed surface 131 of the passivation film 130), and as shown in FIG. 8, the laser light 11 is irradiated, and the upper surface protective film 170 and the passivation film 130 are laser-processed along the predetermined dividing line 112 by the laser light 11 to form the first processing groove 151, and after the formation of the first processing groove 151, the upper surface protective film 170 is removed as shown in FIG. 9.
在實施形態2中的鈍化膜加工步驟1001中,是例如在雷射光線11的照射之前,藉由未圖示之保持工作台將晶圓100以正面101側朝向上方來保持,且使保持工作台以繞著和鉛直方向平行的軸心的方式旋轉,藉此一邊使保持工作台上的晶圓100旋轉,一邊藉由未圖示之樹脂供給噴嘴將液狀的樹脂朝向保持工作台上的晶圓100的正面101吐出,藉此在晶圓100的鈍化膜130上塗佈液狀的樹脂,並使所塗佈之液狀樹脂乾燥,而形成保護晶圓100的鈍化膜130之上的面之上表面保護膜170。In the passivation film processing step 1001 in the implementation form 2, for example, before the irradiation of the laser beam 11, the wafer 100 is held with the front side 101 facing upward by a holding workbench not shown, and the holding workbench is rotated around an axis parallel to the lead vertical direction, thereby rotating the wafer 100 on the holding workbench while ejecting liquid resin toward the front side 101 of the wafer 100 on the holding workbench by a resin supply nozzle not shown, thereby applying liquid resin on the passivation film 130 of the wafer 100, and the applied liquid resin is dried to form a surface protection film 170 on the surface above the passivation film 130 of the protective wafer 100.
在實施形態2中的鈍化膜加工步驟1001中所塗佈之液狀的樹脂是水溶性的樹脂,可為例如聚乙烯醇(PolyVinyl Alcohol,PVA)或聚乙烯吡咯啶酮(PolyVinyl Pyrrolidone,PVP)等。實施形態2中的在鈍化膜加工步驟1001中所形成之上表面保護膜170會防止以由雷射光線11的照射所進行之雷射加工所產生之鈍化膜130的碎屑(加工屑)對鈍化膜130的上表面之附著。在實施形態2中的鈍化膜加工步驟1001中,是形成水溶性的樹脂膜來作為上表面保護膜170。The liquid resin applied in the passivation film processing step 1001 in Embodiment 2 is a water-soluble resin, which can be, for example, polyvinyl alcohol (PVA) or polyvinyl pyrrolidone (PVP). wait. The upper surface protective film 170 formed in the passivation film processing step 1001 in Embodiment 2 prevents damage to the passivation film 130 by chips (processing chips) generated by the laser processing performed by the irradiation of the laser light 11. The attachment of the passivation film 130 to the upper surface. In the passivation film processing step 1001 in Embodiment 2, a water-soluble resin film is formed as the upper surface protective film 170 .
在實施形態2中的鈍化膜加工步驟1001中,是例如在第1加工溝151的形成後,藉由未圖示之保持工作台,將晶圓100以正面101側(形成有上表面保護膜170之側)朝向上方來保持,且使保持工作台以繞著和鉛直方向平行的軸心的方式旋轉,藉此一邊使保持工作台上的晶圓100旋轉,一邊藉由未圖示之洗淨液供給噴嘴,將洗淨液朝向保持工作台上的晶圓100的正面101側的上表面保護膜170吐出,藉此去除上表面保護膜170。洗淨液可為例如純水、或混合有純水與壓縮空氣之雙流體等,並將水溶性的樹脂膜即上表面保護膜170溶解。In the passivation film processing step 1001 in implementation form 2, for example, after the formation of the first processing groove 151, the wafer 100 is held with the front side 101 (the side on which the upper surface protective film 170 is formed) facing upward by a holding workbench not shown, and the holding workbench is rotated around an axis parallel to the lead vertical direction, thereby rotating the wafer 100 on the holding workbench while discharging the cleaning liquid toward the upper surface protective film 170 on the front side 101 of the wafer 100 on the holding workbench through a cleaning liquid supply nozzle not shown, thereby removing the upper surface protective film 170. The cleaning liquid may be, for example, pure water or a double fluid mixture of pure water and compressed air, and dissolves the water-soluble resin film, i.e., the upper surface protective film 170.
實施形態2中的型樣層加工步驟1002,是在實施形態1中的型樣層加工步驟1002中變更成以下之構成:於雷射光線21的照射之前,如圖10所示,在晶圓100的正面101(鈍化膜130的露出面131)形成和實施形態2中的鈍化膜加工步驟1001同樣的上表面保護膜170,且如圖11所示,照射雷射光線21,而以雷射光線21沿著分割預定線112對上表面保護膜170以及型樣層120進行雷射加工來形成第2加工溝152,且在第2加工溝152的形成後,如圖12所示地去除上表面保護膜170。The pattern layer processing step 1002 in the implementation form 2 is changed into the following structure in the pattern layer processing step 1002 in the implementation form 1: before the irradiation of the laser light 21, as shown in FIG. 10, the upper surface protective film 170 which is the same as the passivation film processing step 1001 in the implementation form 2 is formed on the front surface 101 of the wafer 100 (the exposed surface 131 of the passivation film 130), and as shown in FIG. 11, the laser light 21 is irradiated, and the upper surface protective film 170 and the pattern layer 120 are laser processed along the predetermined dividing line 112 by the laser light 21 to form the second processing groove 152, and after the formation of the second processing groove 152, the upper surface protective film 170 is removed as shown in FIG. 12.
實施形態2之晶圓之加工方法由於是在實施形態1中變更成以下之構成:在鈍化膜加工步驟1001以及型樣層加工步驟1002中分別在雷射光線11、21的照射前形成上表面保護膜170,且在雷射光線11、21的照射後(第1加工溝151、第2加工溝152的形成後)去除上表面保護膜170,因此成為發揮和實施形態1同樣的作用效果之實施形態。The wafer processing method of implementation form 2 is changed into the following structure in implementation form 1: in the passivation film processing step 1001 and the pattern layer processing step 1002, an upper surface protective film 170 is formed before the irradiation of the laser beams 11 and 21, respectively, and the upper surface protective film 170 is removed after the irradiation of the laser beams 11 and 21 (after the formation of the first processing groove 151 and the second processing groove 152). Therefore, it becomes an implementation form that exerts the same effect as implementation form 1.
又,實施形態2之晶圓之加工方法是以下之較佳的形態:上表面保護膜170進一步抑制鈍化膜130的剝離、劣化或損傷,並且可以減少在露出面131上附著鈍化膜130或型樣層120的碎屑之疑慮。再者,在本發明中並不限定於此,在鈍化膜加工步驟1001以及型樣層加工步驟1002中各自產生之鈍化膜130以及型樣層120的碎屑較少的情況、或碎屑對鈍化膜130的露出面131之附著不會對器件晶片的品質造成影響的情況等,亦可省略上表面保護膜170的形成而實施實施形態1之晶圓之加工方法。亦即,上表面保護膜170的形成對於本發明並非是必須的。In addition, the wafer processing method of Embodiment 2 is preferably as follows: the upper surface protective film 170 further suppresses the peeling, deterioration or damage of the passivation film 130, and can reduce the attachment of the passivation film 130 or mold on the exposed surface 131. Concern about debris in sample layer 120. Furthermore, the present invention is not limited to this. In the case where the passivation film 130 and the pattern layer 120 respectively generated in the passivation film processing step 1001 and the pattern layer processing step 1002 have less debris, or the debris is In cases where the adhesion of the exposed surface 131 of the passivation film 130 will not affect the quality of the device wafer, the formation of the upper surface protective film 170 may be omitted and the wafer processing method of Embodiment 1 may be implemented. That is, the formation of the upper surface protective film 170 is not necessary for the present invention.
再者,本發明並非限定於上述實施形態之發明。亦即,在不脫離本發明之要點的範圍內,可以進行各種變形來實施。In addition, this invention is not limited to the invention of the said embodiment. That is, various modifications can be made without departing from the gist of the present invention.
10,20:雷射照射器 11,21:雷射光線 100:晶圓 101,111:正面 104,114:背面 110:基板 112:分割預定線 113:器件區域部 120:型樣層 130:鈍化膜 131:露出面 141:支撐構件 142:框架 151:第1加工溝 152:第2加工溝 153:第3加工溝 161,162,163:寬度 170:上表面保護膜 1001:鈍化膜加工步驟 1002:型樣層加工步驟 1003:基板加工步驟 10,20: Laser irradiator 11,21: Laser beam 100: Wafer 101,111: Front side 104,114: Back side 110: Substrate 112: Predetermined dividing line 113: Device area 120: Pattern layer 130: Passivation film 131: Exposed surface 141: Support member 142: Frame 151: First processing groove 152: Second processing groove 153: Third processing groove 161,162,163: Width 170: Upper surface protective film 1001: Passivation film processing step 1002: Pattern layer processing step 1003: Substrate processing step
圖1是顯示實施形態1之晶圓之加工方法的處理程序的流程圖。 圖2是顯示實施形態1之晶圓之加工方法的加工對象即晶圓的立體圖。 圖3是圖2之晶圓的剖面圖。 圖4是說明圖1之鈍化膜加工步驟的剖面圖。 圖5是說明圖1之型樣層加工步驟的剖面圖。 圖6是說明圖1之基板加工步驟的剖面圖。 圖7是說明實施形態2之晶圓之加工方法的鈍化膜加工步驟的剖面圖。 圖8是說明實施形態2之晶圓之加工方法的鈍化膜加工步驟的剖面圖。 圖9是說明實施形態2之晶圓之加工方法的鈍化膜加工步驟的剖面圖。 圖10是說明實施形態2之晶圓之加工方法的型樣層加工步驟的剖面圖。 圖11是說明實施形態2之晶圓之加工方法的型樣層加工步驟的剖面圖。 圖12是說明實施形態2之晶圓之加工方法的型樣層加工步驟的剖面圖。 FIG. 1 is a flow chart showing a processing procedure of a wafer processing method according to embodiment 1. FIG. 2 is a three-dimensional view showing a wafer that is a processing object of the wafer processing method according to embodiment 1. FIG. 3 is a cross-sectional view of the wafer according to FIG. 2. FIG. 4 is a cross-sectional view illustrating a passivation film processing step of FIG. 1. FIG. 5 is a cross-sectional view illustrating a pattern layer processing step of FIG. 1. FIG. 6 is a cross-sectional view illustrating a substrate processing step of FIG. 1. FIG. 7 is a cross-sectional view illustrating a passivation film processing step of a wafer processing method according to embodiment 2. FIG. 8 is a cross-sectional view illustrating a passivation film processing step of a wafer processing method according to embodiment 2. FIG. 9 is a cross-sectional view illustrating a passivation film processing step of a wafer processing method according to embodiment 2. FIG. 10 is a cross-sectional view illustrating a pattern layer processing step of a wafer processing method according to Embodiment 2. FIG. 11 is a cross-sectional view illustrating a pattern layer processing step of a wafer processing method according to Embodiment 2. FIG. 12 is a cross-sectional view illustrating a pattern layer processing step of a wafer processing method according to Embodiment 2.
20:雷射照射器 20: Laser irradiator
21:雷射光線 21: Laser beam
100:晶圓 100: Wafer
101,111:正面 101,111:front
104,114:背面 104,114:Back
110:基板 110: Substrate
120:型樣層 120: Pattern layer
130:鈍化膜 130: Passivation film
131:露出面 131: Reveal your face
151:第1加工溝 151: 1st processing ditch
152:第2加工溝 152: Second processing groove
161,162:寬度 161,162:width
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