TW202407827A - 積體扇出型封裝的製造方法 - Google Patents
積體扇出型封裝的製造方法 Download PDFInfo
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- TW202407827A TW202407827A TW112123715A TW112123715A TW202407827A TW 202407827 A TW202407827 A TW 202407827A TW 112123715 A TW112123715 A TW 112123715A TW 112123715 A TW112123715 A TW 112123715A TW 202407827 A TW202407827 A TW 202407827A
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- interface
- dielectric layer
- redistribution layer
- electrical contacts
- dielectric
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Abstract
在製造積體扇出型(InFO)封裝的方法中,形成穿過覆蓋介面再分佈層(RDL)的介電層以暴露介面再分佈層的電觸點的出入開口,或在出入開口中形成暴露介面再分佈層的電觸點。此後,將膠帶或其他第二介電層設置在介電層及電觸點兩者上方,且形成穿過第二介電層的對準開口,對準開口與穿過介電層的出入開口對準。每一對準開口小於對準出入開口,焊墊形成在介面再分佈層的電觸點上。
Description
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以下係關於電子裝置封裝技術、積體扇出型封裝製造技術以及相關技術。
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以下揭露內容提供用於實施所提供的主題的不同特徵的許多不同的實施例或實例。下文描述元件及配置的特定實例以簡化本揭露。當然,這些特定實例僅為實例,而不旨在進行限制。例如,在以下描述中第一特徵在第二特徵上方或上的形成可以包含第一特徵及第二特徵直接接觸地形成的實施例,且亦可以包含額外特徵可以形成於第一特徵與第二特徵之間以使得第一特徵及第二特徵可以不直接接觸的實施例。另外,本揭露可以在各種實例中重複附圖標記及/或字母。此重複係出於簡單及清楚的目的,且其本身並不指示所論述的各種實施例及/或組態之間的關係。
另外,為了便於描述,本文中可以使用空間相對術語(諸如「在...之下」、「在...下方」、「底部」、「在...上方」、「上部」及其類似者),以描述如圖式中所繪示的一個部件或特徵與另一部件或特徵的關係。除了在圖式中所描繪的定向之外,空間相對術語亦旨在涵蓋裝置在使用或操作中的不同定向。設備可以以其他方式定向(旋轉90度或處於其他定向),且因此可以相應地解釋本文中所使用的空間相對描述詞。
積體電路(integrated circuit,IC)晶圓或晶片的堆疊封裝(package-on-package,PoP)組合件在提供具有高互連密度及改善的電氣及熱效能的緊湊且低輪廓的電子組合件方面具有眾多優點。在基於積體扇出型(integrated fanout,InFO)的PoP組合件中,一個或多個「上部」IC封裝設置在「下部」基於InFO的IC封裝的頂部。基於InFO的IC封裝通常包含嵌入介電模製件中的晶圓或晶片,該介電模製件包含提供嵌入式晶圓或晶片的觸點的扇出的前側及背側電再分佈層(redistribution layer,RDL),及介電夾層,介電夾層具有與前側及背側RDL電互連的InFO通孔(through-InFO via,TIV)。其中一個RDL (本文中稱為介面RDL)亦提供安裝表面及與頂部IC封裝的電介面。例如,基於InFO的IC封裝可包含邏輯IC晶圓或晶片,與之結合的上部IC封裝可為動態隨機存取記憶體(dynamic random access memory,DRAM)封裝,從而形成具有緊密積體的邏輯及記憶體的計算系統,該計算系統適用於例如蜂巢式電話(手機)或其他行動裝置。
在一種方法中,基於InFO的PoP封裝組合件由單一製造實體製造,該單一製造實體通常為IC代工廠。然而,基於InFO的IC封裝的變體,稱為僅底部InFO封裝(即,InFO-b封裝),實現由諸如客戶、製造合作夥伴或其類似者的第三方將頂部IC封裝最終組裝至InFO-b封裝上。為了實現這一方法,介面RDL經修改以提供具有焊墊的穩定表面。隨後,將該InFO-b封裝適合裝運至第三方,在第三方處,可經由介面RDL的焊墊將頂部IC封裝焊接至InFO-b封裝上。這一配置具有眾多優點,諸如使得IC代工廠與其客戶之間能夠協作製造、使得客戶能夠將內部製造的頂部IC封裝焊接至InFO-b封裝上以形成完整的PoP組合件、使得InFO-b封裝的供應能夠保存在第三方的庫存中以便稍後與頂部IC封裝進行最終組裝,為第三方提供將InFO-b封裝與不同可能的頂部IC封裝進行組合的靈活性,以供進一步提高製造靈活性等等。
為確保InFO-b封裝的可靠性及穩定性,焊墊應堅固耐用,可防止周圍環境中的污染物進入。例如,來自污染物的外來離子的滲透可導致InFO-b封裝的故障模式,諸如Na
+/K
+離子污染物經由焊墊外圍的間隙滲入介面RDL的銅或銅基觸點而形成的銅枝晶。例如,在偏置高加速溫度及濕度(Biased Highly Accelerated Temperature and Humidity,bHAST)測試期間,觀察到此故障模式。
本文中揭露的實施例提供具有改進的介面RDL魯棒性且減少或消除此類故障模式的InFO-b封裝及對應的製造方法。
參考第1圖至第9圖,示意性地繪示用於製造僅底部類型的InFO封裝(即,InFO-b封裝)的第一非限制性說明性生產流程。(術語「第一」生產流程僅為列舉性的,而沒有實質性意義)。第1圖示意性地繪示第一生產流程的初始階段的側截面圖。製程始於載體晶圓10,諸如玻璃、藍寶石或其他晶圓。在第1圖中所示的階段,介電層12已沈積在載體晶圓10上,隨後在介電層12上形成介面再分佈層(redistribution layer,RDL) 14。例如,介電層12可包括聚合物材料。介面RDL 14通常包含由聚合物或其他介電材料18的插入層隔開的複數個圖案化金屬(或其他導電)層16。在一些實施例中,介電層12可由與介面RDL 14的介電材料18相同的聚合物或其他介電材料製成,且可替代地視為介面RDL 14的第一介電層。一種用於形成介面RDL 14的非限制性說明性處理順序包含迭代循環,其中循環的每次重複包含以下步驟:(i)沈積連續聚合物18 (或其他介電)層;(ii)利用微影術在聚合物層18中形成開口;(iii)鈦/銅晶種層沈積;(iv)光阻劑塗層及平版印刷術;及(v)利用銅(Cu)電鍍及光阻劑剝離以及晶種層移除來形成介面RDL 14的導電層18。在一些實施例中,這一循環的第一次迭代的步驟(i)形成介電層12。儘管未示出,但預期進一步包含插入介電層12與載體晶圓10之間的脫離層,諸如黏著劑塗層,以輔助載體晶圓10的後續剝離。為達到第1圖中所描繪的階段,亦在介面RDL 14上形成InFO通孔(through-InFO via,TIV) 19。可通過以下方式形成TIV 19:例如,在介面RDL 14上沈積犧牲材料,在犧牲材料中微影蝕刻對應於TIV 19的位置的開口,用形成TIV 19的銅或其他導電材料填充這些開口,及隨後蝕刻掉或以其他方式移除犧牲材料。
第2圖示意性地繪示根據第一生產流程製造InFO-b封裝的另一階段的側截面圖。為達到這一階段,積體電路(integrated circuit,IC)晶圓或晶片20嵌入介電結構中,該介電結構包含由介電層覆蓋的介面再分佈層(redistribution layer,RDL)以及在IC晶圓或晶片20周圍形成的介電夾層22及第二RDL 24。介電夾層22適當地包括模製材料26,模製材料26在IC晶圓或晶片20周圍及TIV 19周圍模製。作為非限制性說明性實例,模製材料26應為介電質,且例如可包括樹脂或其他聚合物及二氧化矽或另一填料。在一種合適的製造方法中,使用拾放(pick-and-place,PnP)或其他晶粒附件將IC晶圓或晶片20置放在介面RDL 14上。PnP置放後,模製材料26模製,研磨以平坦化表面,且在平坦化表面上沈積第二RDL 24。第二RDL 24的形成可採用前述用於形成介面RDL 14的相同迭代循環處理,且可包含相同的導電材料及介電材料。在第2圖的實施例中,IC晶圓或晶片20與第二RDL 24電連接;然而,IC晶圓或晶片20可以附加地或替代地與介面RDL 14電連接。為達到第2圖中所示的階段,處理進一步包含在第二RDL 24的電觸點上設置球柵陣列(ball grid array,BGA) 28。BGA 28允許最終InFO-b封裝進行表面安裝,以便緊固在印刷電路板(printed circuit board,PCB)或其類似者(未示出的特徵)上且與之電連接。第2圖的說明性實例進一步示出安裝至第二RDL 24的積體被動裝置(integrated passive device,IPD) 30,諸如去耦電容器。此IPD或其他積體電子元件(例如積體電感器、電阻器等等)為視情況選擇的。
應注意,雖然說明性實施例首先形成TIV 19 (第1圖),且隨後在TIV 19周圍模製模製材料26,但在變型實施例中,模製材料可在IC晶圓或晶片20周圍模製,隨後微影限定對應於TIV的開口,且用導電材料填充這些開口以形成TIV。
InFO通孔(through-InFO via,TIV) 19提供介面RDL 14與第二RDL 24之間的電接觸。第二RDL 24為積體電路晶圓或晶片20的觸點提供扇出。以類似的方式,介面RDL 24提供扇出以促進隨後耦合至待安裝至InFO-b封裝上的「頂部」IC封裝。然而,在另一預期變體中,第二RDL 24視情況地可以被省略。例如,若IC晶圓或晶片20的電觸點適合於在IC晶圓或晶片上直接形成BGA 28,則可以省略第二RDL 24。
第3圖示意性地繪示根據第一生產流程製造InFO-b封裝的另一階段的側截面圖。為達到這一階段,移除第1圖及第2圖中所示的載體晶圓10以暴露介電層12。在合適的方法中,BGA 28固定至黏著劑(且通常為有彈性的)框架帶32上,且插入載體晶圓10的表面與介電層12之間的黏著劑塗層使用雷射製程或其類似者溶解以將載體晶圓10與介電層12剝離。
第4圖示意性地繪示根據第一生產流程製造InFO-b封裝的另一階段的側截面圖。為達到這一階段,在介電層12中形成出入開口40,出入開口40穿過介電層12以暴露介面RDL 14的電觸點42。每一出入開口40因此與下伏的介面RDL電觸點42對準。在一些實施例中,出入開口40小於與相應出入開口對準的相應的下伏電觸點42。在一些實施例中,每一出入開口40的直徑小於與出入開口對準的介面RDL的電觸點42的直徑D1。
在一些實施例中,出入開口40藉由雷射鑽孔穿過介電層12的出入開口40來形成。例如,藉助於一些非限制性說明性實例,雷射鑽孔可以使用準分子雷射、Nd:YAG雷射、CO
2雷射等來執行。選擇在雷射鑽孔中使用的雷射光的波長及強度,以便鑽孔介電層12的聚合物(或其他介電材料)且不鑽孔(或至少較不激進地鑽孔)電觸點42的金屬或其他導電材料。因此,電觸點42用作形成出入開口40的雷射鑽孔的自然止動件,且雷射鑽孔因此暴露電觸點42的表面。
第5圖示意性地繪示根據第一生產流程製造InFO-b封裝的另一階段的側截面圖。為達到這一階段,在形成出入開口40之後,將第二介電層44設置在介電層12及介面RDL 14的由出入開口40暴露的電觸點42兩者上方。在一些實施例中,第二介電層44體現為膠帶44,將膠帶44黏貼至(即,黏著至)第二介電層上。膠帶44具有足夠的柔韌性以在黏貼製程期間順應地設置在出入開口40內。在一些非限制性說明性實施例中,膠帶44包括聚合物及填料。雖然此處描述使用膠帶作為第二介電層44,但替代地預期第二介電層44利用合適的介電材料的真空沈積或其類似者形成。膠帶44為InFO-b封裝的表面提供增強的保護,該表面最終將成為DRAM或其他頂部IC封裝所安裝的表面。然而,如第5圖中所見,膠帶44覆蓋出入開口40,出入開口40 (在黏貼之前)提供對介面RDL 14的電觸點42的接入。
第6圖示意性地繪示根據第一生產流程製造InFO-b封裝的另一階段的側截面圖。為達到這一階段,形成穿過膠帶或其他第二介電層44的對準開口46。對準開口46與穿過介電層12的出入開口40對準。因此,穿過介電層12的出入開口40及穿過第二介電層44的對準開口46的組合提供對介面RDL 14的下伏電觸點42的接入(即暴露)。如第6圖中所指示,穿過膠帶44的對準開口46的直徑D2小於穿過介電層12的出入開口40的直徑D1。
在一些實施例中,穿過膠帶44的對準開口46利用雷射鑽孔形成。例如,藉助於一些非限制性說明性實例,雷射鑽孔可以使用準分子雷射、Nd:YAG雷射、CO
2雷射等來執行。選擇在雷射鑽孔中使用的雷射光的波長及強度,以便鑽孔膠帶或其他第二介電層44的聚合物/填料(或其他介電材料)且不鑽孔(或至少較不激進地鑽孔)電觸點42的金屬或其他導電材料。因此,電觸點42用作形成對準開口46的雷射鑽孔的自然止動件,且雷射鑽孔因此暴露電觸點42的表面。
在一些實施例中,相同的雷射(例如,相同的準分子雷射、相同的Nd:YAG雷射、相同的CO
2雷射等)用於在介電層12中形成出入開口40的鑽孔步驟(參見第4圖)及形成穿過膠帶或其他第二介電層44的對準開口46的隨後的鑽孔步驟兩者。若如此,則與在形成出入開口40的第一鑽孔步驟期間相比,在形成對準開口46的第二鑽孔步驟期間,雷射束適當地更緊密地聚焦,以便實現與出入開口40的較大直徑D1相比對準開口46的較小直徑D2。
第7圖示意性地繪示根據第一生產流程製造的最終InFO-b封裝50的一部分的側截面圖。為完成第一生產流程,藉由在介面RDL 14的電觸點42上形成焊墊52來進一步處理第6圖中所示的階段。
繼續參考第7圖且進一步參考第8圖及第9圖,在一種方法中,這一處理包含將焊接材料54設置在由相應介電層12及第二介電層44中的出入開口40及對準開口46暴露的電觸點42上。作為非限制性說明性實例,焊接材料54可包括錫/銀(Sn/Ag)焊料或其他類型的含助熔劑材料的焊料。第8圖示意性地繪示緊接在將焊接材料54設置電觸點42上之後的製造點的介面RDL 14的一個電觸點42。視情況,處理進一步包含在將焊接材料54設置電觸點42上之後利用浸漬塗覆有機保焊(organic solderability preservative,OSP)膜56。OSP膜56與其上未設置焊接材料54的介面RDL 14的電觸點42的部分自對準。第9圖示意性地繪示第7圖的InFO-b封裝50的介面RDL 14的一個電觸點42上的完整焊墊52,完整焊墊52包含自對準OSP膜56。在電觸點42為銅或銅合金的實施例中,作為非限制性說明性實例,OSP膜56可包括松香、樹脂、吡咯等化合物,化合物選擇性沈積在銀或其他焊接材料54上方的銅上。
應注意,自在介電層12中形成出入開口40 (見第4圖)延伸至第7圖中所示的最終InFO-b封裝50的處理步驟可在相對較低的溫度下執行。雷射鑽孔步驟可在室溫下完成(其中雷射鑽孔會產生局部加熱),第二介電層44可在室溫下作為膠帶應用,且焊墊52的形成亦可在相對較低的溫度下完成。這些製程通常亦不涉及可能引入離子污染物的化學品。因此,這一處理不太可能導致外來離子的滲透,這類離子可導致故障模式,諸如歸因於 Na
+/K
+離子污染滲入介面RDL 14的銅或銅基電觸點42而形成的銅枝晶。
此外,如下所述,剛剛描述的InFO-b封裝50的製造大大降低諸如偏置高加速溫度及濕度(Biased Highly Accelerated Temperature and Humidity,bHAST)測試期間的任何後續高溫處理期間此類故障模式的可能性。
若執行單一雷射鑽孔步驟以同時鑽透介電層12及膠帶44兩者,這將導致介電層12與介面RDL 42的下伏電觸點42之間的介面直接暴露於周圍環境。介電層12與下伏電觸點42之間的這一暴露介面可為外來離子(諸如Na
+及K
+離子)滲入銅或銅基電觸點且引起bHAST測試期間銅枝晶的形成及故障來提供進入點。
相比之下,參考第1圖至第9圖所述的第一生產流程採用兩步雷射鑽孔製程。在這一製程中,在第一雷射鑽孔步驟中,在介電層12中形成直徑D1的出入開口40 (見第4圖)。這之後在介電層12及介面RDL 14的電觸點42上方設置膠帶(或其他第二介電層) 44 (見第5圖),且隨後執行第二雷射鑽孔步驟,在膠帶44中形成對準開口46 (見第6圖)。這些對準開口46具有較小的直徑D2,亦即,D2<D1。如第8圖及第9圖中所示,這使得膠帶44保護介電層12與介面RDL 14的下伏電觸點42之間的介面。隨後,形成自對準OSP膜56的後續浸漬製程填充任何剩餘間隙,如第9圖中所示。
再次參考第7圖,且進一步參考第10圖,第7圖的InFO-b封裝50適用於裝運至第三方,以用於完成堆疊封裝(package-on-package,PoP)組合件。第10圖示意性地繪示諸如藉由將IC封裝62焊接至第7圖中所示的最終InFO-b封裝50上而構建的所得PoP組合件60的側截面圖。如第10圖中所示,焊料凸塊64在IC封裝62與InFO-b封裝50的介面RDL 14的電觸點42上的焊墊52之間提供焊接連接。有利地,期望由保護介電層12與介面RDL 14的下伏電觸點42之間的介面的膠帶44提供的焊墊52的魯棒性提高因此形成的PoP組合件60的產量。作為一個非限制性說明性實施例,嵌入InFO-b封裝50中的IC晶圓或晶片20可為電腦中央處理單元(central processing unit,CPU)、圖形處理單元(graphical processing unit,GPU)或其類似者的邏輯IC,且焊接至InFO-b封裝50上的IC封裝62可為動態隨機存取記憶體(dynamic random access memory,DRAM)封裝,使得完整的PoP組合件60提供計算系統或裝置,計算系統或裝置具有其自身的板載DRAM 62。應注意,雖然第10圖繪示單一IC封裝62焊接至最終InFO-b封裝50上,但在其他實施例中,兩個或更多個此類IC封裝可焊接至最終InFO-b封裝50上。
參考第11圖至第19圖,示意性地繪示用於製造僅底部類型的InFO封裝(即,InFO-b封裝)的第二非限制性說明性生產流程。(術語「第二」生產流程僅為列舉性的,而沒有實質性意義)。在第11圖至第19圖的側截面圖中,與第1圖至第10圖的實施例中的元件類似的元件標有相似元件符號,例如,在第11圖至第19圖的製程中製造的InFO-b封裝同樣包含嵌入式IC晶圓或晶片20、介面RDL 14、介電層12、膠帶或其他第二介電層44等。然而,如下所述,在與第1圖至第9圖的第一說明性生產流程相比時,參考第11圖至第19圖所述的第二生產流程中這些特徵中的一些的形成在處理步驟及/或處理細節的順序上有所不同。
第11圖示意性地繪示根據第二生產流程製造InFO-b封裝的初始階段的側截面圖。
第12圖示意性地繪示根據第二生產流程製造InFO-b封裝的另一階段的側截面圖。與第一生產流程一樣,介電層12形成在載體晶圓10上。然而,在第二生產流程中,在介面RDL 14形成之前創建穿過介電層12的出入開口40,如第11圖中所示。在一個非限制性說明性實施例中,使用介電層12的微影控制蝕刻,創建穿過介電層12的出入開口40。亦即,將光阻劑塗覆至介電層12上,且經由限定出入開口的光罩進行曝光,以在光阻劑中創建光罩的潛像,且隨後對曝光的光阻劑進行顯影,以在光阻劑中形成對應於出入開口40的開口,其後,使用顯影的光阻劑限制介電層12的蝕刻,以僅移除出入開口的區域中的材料,從而創建出入開口40。微影蝕刻的出入開口40宜具有如第一生產流程所述的直徑D1 (與第4圖相比)。
第12圖示意性地繪示根據第二生產流程製造InFO-b封裝的另一階段的側截面圖。如圖所示,為達到第12圖的階段,形成介面RDL 14。如第12圖中進一步所示,在這一第二生產流程中,介電層12上的介面RDL 14的形成包含用導電材料填充穿過介電層12的出入開口40,以形成介面RDL 14的電觸點42。介面RDL 14的形成可採用與先前針對第一製造實施例所述相同的重複製程,且介面RDL 14同樣宜包含圖案化金屬(或其他導電)層16,圖案化金屬層16由聚合物或其他介電材料18的插入層隔開。
第13圖示意性地繪示根據第二生產流程製造InFO-b封裝的另一階段的側截面圖。為達到第13圖中所示的階段,適合執行類似於先前參考第2圖針對第一製造實施例所述的處理的處理。因此,這一處理包含將IC晶圓或晶片20設置在介面RDL 14上;在IC晶圓或晶片周圍形成介電夾層22,介電夾層包含複數個InFO通孔(through-InFO via,TIV) 19;及在IC晶圓或晶片20及介電夾層22上形成第二RDL 24。同樣,TIV 19提供介面RDL 14與第二RDL 24之間的電接觸。亦如前所述,預期省略第二RDL 24的形成。第13圖的實施例亦描繪在第二RDL 24的電觸點上形成球柵陣列(ball grid array,BGA) 28,以及提供安裝至第二RDL 24的視情況選用的積體被動裝置(integrated passive device,IPD) 30,諸如去耦電容器。
第14圖示意性地繪示根據第二生產流程製造InFO-b封裝的另一階段的側截面圖。為達到第14圖的階段,第二生產流程包含將BGA 28黏著至黏著劑(且通常為有彈性的)框架帶32上,且移除載體晶圓10,以暴露介電層12及介面RDL 14的電觸點42。如先前針對第一製造實施例所述,在一些實施例中,可藉由使用雷射製程或其類似者溶解插入載體晶圓10的表面與介電層12之間的黏著劑塗層(未示出)來移除載體晶圓10。
第14圖中所示的第二生產流程的階段的正在製造的InFO-b封裝的組態類似於第3圖中所示的第一生產流程的正在製造的InFO-b封裝。然而,不同之處在於,在第14圖中所示的第二生產流程的正在製造的InFO-b封裝中,介面RDL 14的電觸點42已暴露,且電觸點42的頂表通常與介電層12的暴露表共面(即齊平)。這係歸因於已參考第11圖及第12圖描述的處理步驟。其結果為,電觸點的暴露頂表面具有第11圖中所示(且亦如第14圖中所指示)的初始處理中形成的出入開口40的直徑D1。
第15圖示意性地繪示根據第二生產流程製造InFO-b封裝的另一階段的側截面圖。為達到這一階段,膠帶(或其他第二介電層) 44設置在介電層12及介面RDL 14的電觸點42兩者上方。這一步驟類似於參考第5圖針對第一製造實施例所述的步驟。不同之處在於,由於電觸點42的頂表面通常與介電層12的暴露表面共面(即齊平),因此膠帶44基本上平坦。
第16圖示意性地繪示根據第二生產流程製造InFO-b封裝的另一階段的側截面圖。為達到第16圖中所示的階段,例如利用雷射鑽孔在膠帶44中形成對準開口46。這一操作類似於先前參考第6圖描述的第一生產流程的(第二)雷射鑽孔步驟。在第二生產流程中,且如第16圖中所示,對準開口46形成有直徑D2,直徑D2小於對準電觸點42的暴露表面的直徑D1。
第17圖示意性地繪示根據第二生產流程製造的最終InFO-b封裝50'的一部分的側截面圖。為完成第二生產流程,藉由在介面RDL 14的電觸點42上形成焊墊52來進一步處理第16圖中所示的階段。
繼續參考第17圖且進一步參考第18圖及第19圖,在一種方法中,這一處理包含將焊接材料54設置在由膠帶(或其他第二介電層) 44中的對準開口46暴露的電觸點42上。作為非限制性說明性實例,焊接材料54可包括錫/銀(Sn/Ag)焊料或其他類型的含助熔劑材料的焊料。第18圖示意性地繪示緊接在將焊接材料54設置電觸點42上之後的第二生產流程中的點的介面RDL 14的一個電觸點42。視情況,處理進一步包含在將焊接材料54設置電觸點42上之後利用浸漬塗覆OSP膜56。OSP膜56與其上未設置焊接材料54的介面RDL 14的電觸點42的部分自對準。第19圖示意性地繪示第17圖的InFO-b封裝50'的介面RDL 14的一個電觸點42上的完整焊墊52,完整焊墊52包含自對準OSP膜56。在電觸點42為銅或銅合金的實施例中,作為非限制性說明性實例,OSP膜56可包括松香、樹脂、吡咯等化合物,化合物選擇性沈積在銀或其他焊接材料54上方的銅上。
如第19圖中所示,膠帶44中的對準開口46的直徑D2小於對準的電觸點42的暴露表面的直徑D1。與第一生產流程一樣,第二生產流程因此使得膠帶44保護介電層12與介面RDL 14的電觸點42之間的介面。隨後,形成自對準OSP膜56的後續浸漬製程填充任何剩餘間隙,如第19圖中所示。因此,亦期望第二製造實施例確保焊墊52堅固耐用,可防止周圍環境的污染物進入,諸如可以其他方式導致InFO-b封裝的故障模式的來自污染物的外來離子的滲透,諸如由Na
+/K
+離子污染物經由焊墊外圍的間隙滲入介面RDL的銅或銅基觸點而形成的銅枝晶。
在第一製造實施例或第二製造實施例中,D1>D2,以確保膠帶44保護介電層12與介面RDL 14的電觸點42之間的介面。在一些非限制性說明性實施例中,D1≥10微米。在一些非限制性說明性實施例中,D1>D2≥10微米。在一些非限制性實施例中,比率
.05。
在下文中,描述一些其他實施例。
在非限制性說明性實施例中,揭露一種製造積體扇出型(integrated fan-out,InFO)封裝的方法。方法包含:將積體電路(integrated circuit,IC)晶圓或晶片嵌入介電結構中,介電結構包含由介電層覆蓋的介面再分佈層(redistribution layer,RDL);形成穿過介電層的出入開口以暴露介面RDL的電觸點;在形成出入開口之後,在介電層及介面RDL的電觸點兩者上方設置第二介電層;形成穿過第二介電層的對準開口,對準開口與穿過介電層的出入開口對準;及在介面RDL的電觸點上形成焊墊。
在非限制性說明性實施例中,揭露一種製造InFO封裝的方法。方法包含:在載體晶圓上設置介電層;使用微影控制蝕刻創建穿過介電層的出入開口;在介電層上形成介面RDL,包含用導電材料填充穿過介電層的出入開口以形成介面RDL的電觸點;將IC晶圓或晶片設置在介面RDL上;在IC晶圓或晶片周圍形成介電夾層,介電夾層包含複數個夾層通孔;在IC晶圓或晶片及介電夾層上形成第二RDL,其中夾層通孔提供介面RDL與第二RDL之間的電接觸;移除載體晶圓以暴露介電層及介面RDL的電觸點;在移除之後,在介面RDL及介面RDL的電觸點兩者上方設置第二介電層;形成穿過第二介電層的對準開口,對準開口與介面RDL的電觸點對準;及在介面RDL的電觸點上形成焊墊。
在非限制性說明性實施例中,InFO封裝包含:IC晶圓或晶片;介電結構,IC晶圓或晶片嵌入介電結構中,介電結構包含具有RDL電觸點的介面RDL及覆蓋介面RDL且包含穿過介電層的出入開口的介電層,出入開口與相應的介面RDL電觸點對準;及第二介電層,覆蓋介電層且包含穿過第二介電層的對準開口,對準開口與介電層的相應的出入開口及相應的RDL電觸點對準。每一對準開口小於對準出入開口。
前述概述若干實施例的特徵,以使得熟習此項技術者可以較佳地理解本揭露的態樣。熟習此項技術者應當瞭解,其可以容易地將本揭露用作設計或修改其他製程及結構的基礎,以供實現本文中所引入的實施例的相同目的及/或達成相同優點。熟習此項技術者亦應該認識到,這些等效構造不脫離本揭露的精神及範疇,且在不脫離本揭露的精神及範疇的情況下,熟習此項技術者可以進行各種改變、取代及變更。
10:載體晶圓
12:介電層
14:介面再分佈層
16:圖案化金屬層
18:介電材料
19:InFO通孔
20:積體電路晶圓或晶片
22:介電夾層
24:第二RDL
26:模製材料
28:球柵陣列
30:積體被動裝置
32:框架帶
40:出入開口
42:電觸點
44:第二介電層
46:對準開口
50、50':InFO-b封裝
52:焊墊
54:焊接材料
56:有機保焊膜
60:PoP組合件
62:IC封裝
64:焊料凸塊
D1、D2:直徑
當結合隨附圖式閱讀時,根據以下詳細描述最佳地理解本揭露的態樣。應注意,根據行業中的標準實踐,未按比例繪製各種特徵。實務上,為論述清楚起見,各種特徵的尺寸可以任意增加或減小。
第1圖示意性地繪示根據第一說明性生產流程的僅底部類型(bottom-only type)的積體扇出型(integrated fanout,InFO)封裝(即,InFO-b封裝)的初始製造階段的側截面圖。
第2圖示意性地繪示根據第一生產流程製造InFO-b封裝的另一階段的側截面圖。
第3圖示意性地繪示根據第一生產流程製造InFO-b封裝的另一階段的側截面圖。
第4圖示意性地繪示根據第一生產流程製造InFO-b封裝的另一階段的側截面圖。
第5圖示意性地繪示根據第一生產流程製造InFO-b封裝的另一階段的側截面圖。
第6圖示意性地繪示根據第一生產流程製造InFO-b封裝的另一階段的側截面圖。
第7圖示意性地繪示根據第一生產流程製造的最終InFO-b封裝的一部分的側截面圖。
第8圖示意性地繪示第7圖的在將焊接材料設置在電觸點上之後但在塗覆有機保焊膜之前的製造點的InFO-b封裝的介面再分佈層(redistribution layer,RDL)的一個電觸點。
第9圖示意性地繪示第7圖的在將焊接材料設置在電觸點上之後且在塗覆有機保焊膜之後的製造點的InFO-b封裝的介面RDL的一個電觸點。
第10圖示意性地繪示藉由將IC封裝焊接至第7圖中所示的最終InFO-b封裝上而構建的堆疊封裝(package-on-package,PoP)組合件的側截面圖。
第11圖示意性地繪示根據第二說明性生產流程製造InFO-b封裝的初始階段的側截面圖。
第12圖示意性地繪示根據第二生產流程製造InFO-b封裝的另一階段的側截面圖。
第13圖示意性地繪示根據第二生產流程製造InFO-b封裝的另一階段的側截面圖。
第14圖示意性地繪示根據第二生產流程製造InFO-b封裝的另一階段的側截面圖。
第15圖示意性地繪示根據第二生產流程製造InFO-b封裝的另一階段的側截面圖。
第16圖示意性地繪示根據第二生產流程製造InFO-b封裝的另一階段的側截面圖。
第17圖示意性地繪示根據第二生產流程製造的最終InFO-b封裝的一部分的側截面圖。
第18圖示意性地繪示第17圖的在將焊接材料設置在電觸點上之後但在塗覆有機保焊膜之前的製造點的InFO-b封裝的介面RDL的一個電觸點。
第19圖示意性地繪示第17圖的在將焊接材料設置在電觸點上之後且在塗覆有機保焊膜之後的製造點的InFO-b封裝的介面RDL的一個電觸點。
國內寄存資訊(請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記)
無
12:介電層
14:介面再分佈層
16:圖案化金屬層
18:介電材料
19:InFO通孔
20:積體電路晶圓或晶片
22:介電夾層
24:第二RDL
26:模製材料
28:球柵陣列
30:積體被動裝置
32:框架帶
42:電觸點
44:第二介電層
46:對準開口
D2:直徑
Claims (20)
- 一種積體扇出型封裝的製造方法,該方法包括以下步驟: 將一積體電路晶圓或晶片嵌入一介電結構中,該介電結構包含由一介電層覆蓋的一介面再分佈層; 形成穿過該介電層的多個出入開口以暴露該介面再分佈層的多個電觸點; 在形成該些出入開口之後,在該介電層及該介面再分佈層的該些電觸點兩者上方設置一第二介電層; 形成穿過該第二介電層的多個對準開口,該些對準開口與穿過該介電層的該些出入開口對準;及 在該介面再分佈層的該些電觸點上形成多個焊墊。
- 如請求項1所述之方法,其中每一該對準開口的一直徑小於該些出入開口之一對準者的一直徑。
- 如請求項1所述之方法,其中該嵌入包含以下步驟: 在一載體晶圓上形成該介電層; 在該介電層上形成該介面再分佈層; 將該積體電路晶圓或晶片設置在該介面再分佈層上; 在該積體電路晶圓或晶片周圍形成一介電夾層,該介電夾層包含複數個夾層通孔; 在該積體電路晶圓或晶片及該介電夾層上形成一第二再分佈層,其中該些夾層通孔提供該介面再分佈層與該第二再分佈層之間的電接觸;及 移除該載體晶圓以暴露該介電層。
- 如請求項3所述之方法,進一步包括以下步驟,在該移除該載體晶圓之步驟之前,將一球柵陣列設置在該第二再分佈層的多個電觸點上。
- 如請求項1所述之方法,其中形成穿過該介電層以暴露該介面再分佈層的該些電觸點的該些出入開口之步驟包含以下步驟: 雷射鑽孔穿過該介電層的該些出入開口。
- 如請求項1所述之方法,其中將該第二介電層設置在該介電層及該介面再分佈層的該些電觸點兩者上方之步驟包含以下步驟: 將包括膠帶的該第二介電層黏著至該介電層上,其中該膠帶順應地設置在該些出入開口內部。
- 如請求項6所述之方法,其中形成穿過該第二介電層的該些對準開口之步驟包含以下步驟: 雷射鑽孔穿過包括該膠帶的該第二介電層的該些對準開口。
- 如請求項1所述之方法,其中在該介面再分佈層的該些電觸點上形成該些焊墊之步驟包含以下步驟: 將焊接材料設置在該介面再分佈層的該些電觸點上;及 在將該焊接材料設置在該介面再分佈層的該些電觸點上之後,利用浸漬塗覆一有機保焊膜,其中該有機保焊膜與該介面再分佈層的該些電觸點未設置該焊接材料的多個部分自對準。
- 如請求項1所述之方法,其中該介面再分佈層的該些電觸點包括銅。
- 一種堆疊封裝組裝方法,包括以下步驟: 藉由執行如請求項1所述之方法製造一積體扇出型封裝;及 經由該些焊墊將至少一個積體電路封裝焊接至該積體扇出型封裝上。
- 一種製造積體扇出型封裝的方法,該方法包括以下步驟: 在一載體晶圓上設置一介電層; 使用微影控制蝕刻創建穿過該介電層的多個出入開口; 在該介電層上形成一介面再分佈層,包含用導電材料填充穿過該介電層的該些出入開口以形成該介面再分佈層的多個電觸點; 將一積體電路晶圓或晶片設置在該介面再分佈層上; 在該積體電路晶圓或晶片周圍形成一介電夾層,該介電夾層包含複數個夾層通孔; 在該積體電路晶圓或晶片及該介電夾層上形成一第二再分佈層,其中該些夾層通孔提供該介面再分佈層與該第二再分佈層之間的電接觸; 移除該載體晶圓以暴露該介電層及該介面再分佈層的該些電觸點; 在該移除之後,在該介面再分佈層及該介面再分佈層的該些電觸點兩者上方設置一第二介電層; 形成穿過該第二介電層的多個對準開口,該些對準開口與該介面再分佈層的該些電觸點對準;及 在該介面再分佈層的該些電觸點上形成多個焊墊。
- 如請求項11所述之方法,其中每一該對準開口的一直徑小於與該對準開口對準的該介面再分佈層的該電觸點的一直徑。
- 如請求項11所述之方法,進一步包括以下步驟,在該移除該載體晶圓之前,將一球柵陣列設置在該第二再分佈層上。
- 如請求項11所述之方法,其中將該第二介電層設置在該介電層及該介面再分佈層的該些電觸點兩者上方之步驟包含以下步驟: 將包括膠帶的該第二介電層黏著至該介電層上。
- 如請求項14所述之方法,其中形成穿過該第二介電層的該些對準開口之步驟包含以下步驟: 雷射鑽孔穿過該膠帶的該些對準開口。
- 如請求項11所述之方法,其中在該介面再分佈層的該些電觸點上形成該些焊墊之步驟包含以下步驟: 將焊接材料設置在該介面再分佈層的該些電觸點上;及 在將該焊接材料設置在該介面再分佈層的該些電觸點上之後,利用浸漬塗覆一有機保焊膜,其中該有機保焊膜與該介面再分佈層的該些電觸點未設置該焊接材料的多個部分自對準。
- 如請求項11所述之方法,其中該介面再分佈層的該些電觸點包括銅。
- 一種堆疊封裝組裝方法,包括以下步驟: 藉由執行如請求項11所述之方法製造一積體扇出型封裝;及 經由該些焊墊將至少一個積體電路封裝焊接至該積體扇出型封裝上。
- 一種積體扇出型封裝,包括: 一積體電路晶圓或晶片; 一介電結構,該積體電路晶圓或晶片嵌入該介電結構中,該介電結構包含具有多個再分佈層電觸點的一介面再分佈層及覆蓋該介面再分佈層且包含穿過該介電層的多個出入開口的一介電層,該些出入開口與多個相應的介面再分佈層電觸點對準;及 一第二介電層,覆蓋該介電層且包含穿過該第二介電層的多個對準開口,該些對準開口與該介電層的多個出入開口及多個再分佈層電觸點分別對準; 其中每一該對準開口小於該些出入開口之一對準者。
- 如請求項19所述之積體扇出型封裝,其中嵌入該積體電路晶圓或晶片的該介電結構進一步包含: 一介電夾層,設置在該積體電路晶圓或晶片周圍,該介電夾層包含複數個夾層通孔;及 一第二再分佈層,設置在該積體電路晶圓或晶片上及該介電夾層上,其中該些夾層通孔提供介面再分佈層與該第二再分佈層之間的電接觸。
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