TW202407781A - Chip transportation method that is used to transport a plurality of chips in a processing apparatus that includes a holding worktable for holding the plurality of chips thereon and a transport-out unit for removing the chips from the holding worktable - Google Patents
Chip transportation method that is used to transport a plurality of chips in a processing apparatus that includes a holding worktable for holding the plurality of chips thereon and a transport-out unit for removing the chips from the holding worktable Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Abstract
Description
本發明是有關於一種將複數個晶片吸引保持並搬送之晶片之搬送方法。The present invention relates to a wafer transporting method that attracts, holds and transports a plurality of wafers.
例如,在半導體器件之製造程序中,已在進行的是以下作法:將在被相互正交之複數條分割預定線區劃成格子狀之複數個區域分別形成有IC或LSI等器件之封裝基板,以切削裝置沿著分割預定線來切斷,藉此分割成一個個的經封裝之複數個晶片(參照例如專利文獻1)。For example, in the manufacturing process of semiconductor devices, the following method has been carried out: packaging substrates containing devices such as ICs and LSIs are respectively formed in a plurality of areas divided into a grid shape by a plurality of mutually orthogonal dividing lines. The chip is cut along a planned division line with a cutting device, thereby being divided into a plurality of packaged wafers (see, for example, Patent Document 1).
將封裝基板沿分割預定線切斷之切削裝置具備有保持封裝基板之保持工作台,及從該保持工作台搬出複數個晶片的搬送單元。在此,搬送單元具備有搬送墊,前述搬送墊具有形成有複數個吸引孔之接觸面,且前述複數個吸引孔和已保持在保持工作台之複數個晶片的各個對應,複數個晶片是被此搬送墊吸引保持而從保持工作台搬送到其他的場所。 先前技術文獻 專利文獻 A cutting device that cuts a package substrate along a planned division line is provided with a holding table that holds the package substrate, and a transfer unit that carries out a plurality of wafers from the holding table. Here, the transfer unit is provided with a transfer pad, and the transfer pad has a contact surface on which a plurality of suction holes are formed, and the plurality of suction holes correspond to the plurality of wafers held on the holding table, and the plurality of wafers are held on the holding table. This transfer pad attracts and holds the device and carries it from the holding table to another place. Prior technical literature patent documents
專利文獻1:日本特開2013-065603號公報Patent Document 1: Japanese Patent Application Publication No. 2013-065603
發明欲解決之課題The problem to be solved by the invention
然而,會有以下問題:在藉由搬送墊吸引保持複數個晶片的情況下,若晶片變得較小,僅使搬送墊一次接觸於該晶片來進行吸引保持,並無法吸引保持全部的晶片。However, there is the following problem: when a plurality of wafers are suctioned and held by the transfer pad, if the wafer becomes smaller, all the wafers cannot be suctioned and held by only making the transfer pad contact the wafer once.
據此,本發明之目的在於提供一種可以將全部的晶片吸引保持並搬送之晶片之搬送方法。 用以解決課題之手段 Accordingly, an object of the present invention is to provide a wafer transfer method that can attract, hold, and transfer all wafers. means to solve problems
根據本發明,可提供一種晶片之搬送方法,是在加工裝置中搬送複數個晶片,前述加工裝置具備有:保持工作台,保持已分割成該複數個晶片之封裝基板;搬送單元,從該保持工作台搬出該複數個晶片;及控制器,控制該搬送單元, 該搬送單元具有:接觸面,接觸於該複數個晶片;複數個吸引孔,在該接觸面以和該複數個晶片對應的方式形成;吸引路,連接該複數個吸引孔與吸引源;及升降單元,使該接觸面升降, 該晶片之搬送方法具備以下步驟: 吸引保持步驟,將該接觸面朝已保持在該保持工作台之該複數個晶片壓附來吸引保持該複數個晶片;及 上升步驟,在該吸引保持步驟之後使該接觸面上升, 控制器控制成將該吸引保持步驟以及該上升步驟分別實施2次以上。 發明效果 According to the present invention, a wafer transportation method can be provided, which is to transport a plurality of wafers in a processing device. The processing device is provided with: a holding table that holds the packaging substrate divided into the plurality of wafers; and a transportation unit that moves the wafers from the holding table. The workbench moves out the plurality of wafers; and a controller controls the transport unit, The transfer unit has: a contact surface that contacts the plurality of wafers; a plurality of suction holes formed on the contact surface in a manner corresponding to the plurality of wafers; a suction path that connects the plurality of suction holes and the suction source; and a lift. unit to raise and lower the contact surface, The wafer transportation method includes the following steps: In the suction and holding step, the contact surface is pressed toward the plurality of wafers held on the holding workbench to attract and hold the plurality of wafers; and a rising step to raise the contact surface after the attracting and holding step, The controller controls the suction and holding step and the rising step to be performed two or more times each. Invention effect
根據本發明,因為進行成將搬送單元的接觸面朝已保持在保持工作台之複數個晶片壓附來吸引保持該晶片之吸引保持步驟、及在該吸引保持步驟之後使接觸面上升之上升步驟分別實施2次以上,所以可得到讓將全部的晶片藉由搬送單元來吸引保持並搬送之機率提高之效果。According to the present invention, the suction and holding step of pressing the contact surface of the transfer unit toward the plurality of wafers held on the holding table to attract and hold the wafers, and the rising step of raising the contact surface after the suction and holding step are performed. By performing this process twice or more, the effect of increasing the probability of attracting, holding and transporting all the wafers by the transport unit can be obtained.
用以實施發明之形態Form used to implement the invention
以下,依據附加圖式來說明本發明的實施形態。Hereinafter, embodiments of the present invention will be described based on the attached drawings.
首先,依據圖1~圖4,在以下說明用於實施本發明之晶片之搬送方法的切削裝置的基本構成。再者,在以下,是將圖1所示之箭頭方向分別設為X軸方向(左右方向)、Y軸方向(前後方向)、Z軸方向(上下方向)來說明。First, based on FIGS. 1 to 4 , the basic structure of a cutting device for implementing the wafer transport method of the present invention will be described below. In addition, in the following description, the arrow directions shown in FIG. 1 are respectively referred to as the X-axis direction (left-right direction), the Y-axis direction (front-back direction), and the Z-axis direction (up-down direction).
圖1所示之切削裝置1是用於切削矩形板狀的封裝基板W之裝置,並具備有以下來作為主要的構成要素:保持工作台10,保持封裝基板W;搬出單元20,將已容置於片匣2之封裝基板W往暫置組件3搬出;第1搬送單元30,將已暫置於暫置組件3之封裝基板W往保持工作台10搬送;切削單元40,用於沿著分割預定線切削已保持在保持工作台10之封裝基板W;上表面洗淨組件50,將已藉由該切削單元40切削之封裝基板W的上表面洗淨;下表面洗淨組件60,將封裝基板W的下表面洗淨;下表面乾燥組件70,使已藉由該下表面洗淨組件60洗淨之封裝基板W的下表面乾燥;第2搬送單元80,將已保持在保持工作台10之切削加工後的封裝基板W經由下表面洗淨組件60往下表面乾燥組件70搬送;落入組件90,用於讓已載置在下表面洗淨組件60上之封裝基板W的經分割之複數個晶片C(參照圖4)落入到該晶片容置組件4;及控制器100。The
其次,以下針對構成切削裝置1之主要的構成要素即保持工作台10、搬出單元20、第1搬送單元30、切削單元40、上表面洗淨組件50、下表面洗淨組件60、下表面乾燥組件70、第2搬送單元80、落入組件90以及控制器100之構成,來依序說明。Next, the main components constituting the
在此,封裝基板W是在被相互正交之複數條分割預定線設定成格子狀之複數個區域分別形成有IC或LSI等器件之CSP基板,且將該封裝基板W藉由切削裝置1沿著分割預定線來切斷,藉此分割成一個個的經封裝之複數個晶片C(參照圖4)。Here, the package substrate W is a CSP substrate in which devices such as ICs and LSIs are respectively formed in a plurality of areas set in a grid shape by a plurality of mutually orthogonal dividing lines, and the package substrate W is cut along the edges of the package substrate W by the
如圖1所示,保持工作台10是配置在基台1A的幾乎中央之矩形板狀的構件,在其上表面的保持面11(參照圖4)開口有分別和封裝基板W的區劃成格子狀之複數個區域對應之圓孔狀的未圖示的吸引孔。並且,如圖4所示,這些吸引孔經過形成在保持工作台10之複數條吸引路12而連接於1條吸引路13,且在吸引路13連接有配管14。在此,配管14是分歧為2個分歧管14a、14b,其中一邊的分歧管14a是透過電磁開關閥V1而連接於真空泵等的吸引源15,另一邊的分歧管14b是透過電磁開關閥V2而連接於空氣壓縮機等的空氣供給源16。再者,電磁開關閥V1、V2已電連接於控制器100,且其開關動作是分別藉由控制器100來控制。As shown in FIG. 1 , the holding table 10 is a rectangular plate-shaped member disposed almost in the center of the
又,如圖1所示,保持工作台10是被圓板狀的支撐構件17所支撐,此支撐構件17與保持工作台10可以藉由未圖示之旋轉驅動機構而繞著垂直的中心軸旋轉預定角度(90°)。Furthermore, as shown in FIG. 1 , the holding table 10 is supported by a disc-
然後,保持工作台10與支撐構件17可藉由未圖示的X軸方向移動組件而沿著X軸方向(加工進給方向)移動,且可以在對封裝基板W進行切削加工之加工位置、與交接封裝基板W之交接位置之間往返移動。再者,X軸方向移動組件是藉由習知的滾珠螺桿機構等所構成。Then, the holding table 10 and the supporting
如圖1所示,搬出單元20會實現以下功能:從配置在支柱1B內之片匣2取出1片封裝基板W,且將此封裝基板W暫置到暫置組件3,前述支柱1B是配置在基台1A上的+Y軸方向端部(後端部)且豎立於基台1A的-X軸方向端部(左端部)。As shown in FIG. 1 , the
第1搬送單元30是將暫置在暫置組件3之封裝基板W往保持工作台10搬送之構成,且具備有吸引保持封裝基板W的上表面之吸引墊31、支撐該吸引墊31並使其上下移動之氣缸機構32、支撐該氣缸機構32之作動臂33、及使該作動臂33沿Y軸方向(前後方向)移動之未圖示的移動組件。再者,亦可設成藉由具有馬達、滾珠螺桿與導引件的滾珠螺桿機構來取代氣缸機構32,使吸引墊31朝上下移動。The
並且,在上述氣缸機構32,安裝有檢測封裝基板W的應加工區域的拍攝組件34。此拍攝組件34是藉由顯微鏡或CCD相機等光學組件所構成,且將所拍攝到之圖像資料朝向控制器100發送。Furthermore, an
切削單元40是將已保持在保持工作台10之封裝基板W沿著分割預定線來切削之單元,具備有沿著分度進給方向(Y軸方向)配置之主軸殼體41、可旋轉地支撐於該主軸殼體41之未圖示的主軸、裝設在該主軸的前端的切削刀片42、與配置在該切削刀片42的兩側之未圖示的切削水供給噴嘴。The
上述主軸殼體41是藉由未圖示之Y軸方向移動組件而可在Y軸方向(分度進給方向)上移動,且未圖示之主軸與切削刀片42是藉由伺服馬達等之未圖示的旋轉驅動源而以預定的速度被旋轉驅動。再者,在本實施形態中,切削刀片42是使用已將鑽石磨粒以鍍鎳方式固定在藉由鋁而形成為圓盤狀之刀片基台的電鑄刀片。又,在封裝基板W的切削加工中,是從未圖示之切削水供給噴嘴將切削水供給到切削刀片42與封裝基板W之切削部。The above-mentioned
如圖1所示,在X軸方向(加工進給方向)上於切削單元40與保持工作台10之間,亦即,在沿著保持工作台10的X軸方向之移動路徑的上方配設有上表面洗淨組件50,前述上表面洗淨組件50是對已藉由切削單元40所進行之切削加工而被分割成一個個晶片C之封裝基板W的上表面進行洗淨。此上表面洗淨組件50是朝向已保持在保持工作台10上之切削加工後的封裝基板W的上表面噴射洗淨水來洗淨該封裝基板W之上表面之組件。As shown in FIG. 1 , it is disposed between the
下表面洗淨組件60是對已藉由切削單元40所進行之切削加工而被分割成一個個晶片C之封裝基板W的下表面進行洗淨之組件,且如圖1所示,是配置在保持工作台的-Y軸側(前側)。此下表面洗淨組件60具備有可旋轉的一對洗淨輥61、與對這些洗淨輥61供給洗淨水之未圖示的洗淨水供給組件,各洗淨輥61是藉由海綿等來構成。The lower
下表面乾燥組件70是使已藉由下表面洗淨組件60洗淨下表面之封裝基板W的下表面乾燥之組件,且如圖1所示,是在Y軸方向上相鄰於下表面洗淨組件60而配設。此下表面乾燥組件70具備有吸引保持下表面已被下表面洗淨組件60洗淨之封裝基板W之矩形板狀的乾燥工作台71、及作為加熱組件之未圖示的加熱器。The lower
第2搬送單元80是用於和保持工作台10一起實施本發明之晶片C之搬送方法的單元,且是以下之構成:將經切削加工且保持在保持工作台10上之封裝基板W的一個個的晶片C吸引保持,並將這些複數個晶片C經由下表面洗淨組件60來搬送到下表面乾燥組件70。The
在此,第2搬送單元80是包含搬送墊81、作動臂82、未圖示之移動組件與升降單元5而構成,前述搬送墊81是對已保持在保持工作台10之切削加工後的封裝基板W的已分割成一個個的複數個晶片C的上表面進行吸引保持,前述作動臂82是支撐該搬送墊81,前述移動組件是使該作動臂82和搬送墊81一起在Y軸方向(前後方向)上移動,前述升降單元5是使此等之搬送墊81與作動臂82在Z軸方向(上下方向)上升降。Here, the
上述搬送墊81是矩形板狀的構件,且在作動臂82的下端水平地安裝。並且,如圖2~圖4所示,在此搬送墊81的下表面,安裝有矩形的接觸面83,且如圖2所示,在此接觸面83以呈矩陣狀的方式開口有複數個(在圖示例中為4列×7行=28個)圓孔狀的吸引孔83a。再者,吸引孔83a的數量可以因應於要分割製造之晶片C之數量來任意地設定。The conveying
如圖4所示,在接觸面83開口之複數個吸引孔83a是經過形成在接觸面83之複數條吸引路84而連接於1條吸引路85上,且在吸引路85連接有配管86。並且,配管86是透過電磁開關閥V3而連接於真空泵等的吸引源87。再者,電磁開關閥V3是電連接於控制器100,且其開關動作是藉由控制器100來控制。As shown in FIG. 4 , a plurality of suction holes 83 a opened in the
又,如圖3所示,前述升降單元5是藉由已容置在支柱1B(參照圖1)內之滾珠螺桿機構來構成。此滾珠螺桿機構具備有螺合插通於作動臂82之垂直的滾珠螺桿軸6、連結於該滾珠螺桿軸6的上端部之旋轉驅動源即伺服馬達7、與導引作動臂82與受其支撐之搬送墊81的升降之導軌8。In addition, as shown in FIG. 3 , the
從而,因為當啟動伺服馬達7使滾珠螺桿軸6正逆轉時,會使螺合於此滾珠螺桿軸6之作動臂82沿著導軌8升降,所以會使被該作動臂82支撐之搬送墊81和作動臂82一起升降。Therefore, when the servo motor 7 is started to cause the
如圖1所示,落入組件90是用於使已保持在下表面乾燥組件70的乾燥工作台71上之封裝基板W的已分割成複數個的晶片C的上表面乾燥,並且讓這些晶片C落入相鄰於下表面乾燥組件70而配置之晶片容置組件4的投入口4a之構成。此落入組件90具備有朝向晶片C的上表面噴射暖風之暖風噴射噴嘴91、裝設於該暖風噴射噴嘴91之落入刷具92、使暖風噴射噴嘴91升降之氣缸機構93、支撐該氣缸機構93之作動臂94、與使該作動臂94在Y軸方向上移動之未圖示的移動組件。再者,於基台1A的前壁(+X軸方向端面)設置有用於讓晶片容置組件4的未圖示之晶片容置容器進出之抽屜95。As shown in FIG. 1 , the
控制器100具備有依照控制程式進行運算處理之CPU(中央處理單元,Central Processing Unit)、與ROM(唯讀記憶體,Read Only Memory)或RAM(隨機存取記憶體,Random Access Memory)等之記憶體等。此控制器100是接收來自拍攝組件34的拍攝資料,並且控制保持工作台10的未圖示的旋轉驅動機構、搬出單元20、第1搬送單元30、切削單元40、上表面洗淨組件50、下表面洗淨組件60、下表面乾燥組件70、第2搬送單元80、落入組件90等。The
其次,說明如以上所構成之切削裝置1的作用。Next, the operation of the
在藉由切削裝置1進行之封裝基板W的切削加工時,可藉由搬出單元20將已容置於片匣2內之封裝基板W取出並暫置到暫置組件3。在此暫置組件3中,封裝基板W會被對位,且此已對位之封裝基板W可被第1搬送單元30保持並搬送到保持工作台10,而被吸引保持在該保持工作台10上。During the cutting process of the package substrate W by the
另一方面,在加工位置中,當藉由以拍攝組件34所進行之封裝基板W的正面的拍攝而得到圖像時,即可藉由以該圖像為依據之型樣匹配處理來檢測應切削之分割預定線。當像這樣檢測出封裝基板W的分割預定線時,即可將切削單元40的切削刀片42的Y軸方向(分度移動方向)之位置分度移動,而藉由未圖示之分度進給組件來將切削刀片42的Y軸方向的位置對齊於封裝基板W的應切削的分割預定線之位置。On the other hand, in the processing position, when an image is obtained by photographing the front surface of the package substrate W by the
然後,從上述狀態將切削刀片42一邊以高速來旋轉驅動,一邊藉由未圖未之升降機構下降預定的切入量之量,並且藉由未圖示之X軸移動組件使保持工作台10與已保持在此保持工作台10之封裝基板W朝-X軸方向移動。又,從未圖示之水供給源將切削水供給到切削水噴嘴,並從該切削水噴嘴將切削水朝向切削刀片42噴射。Then, from the above state, the cutting
如此一來,在加工位置中,已保持在保持工作台10之封裝基板W會一邊接受切削水的供給,一邊被切削刀片42沿著分割預定線切削。並且,若沿著一個方向的全部的分割預定線進行對封裝基板W之上述切削加工後,即可藉由未圖示之旋轉驅動機構將保持工作台10與已保持在此保持工作台10之封裝基板W旋轉90°,而同樣地進行沿著和已結束切削之分割預定線正交之其他方向的分割預定線之切削加工。然後,當沿著封裝基板W之全部的分割預定線的切削結束後,即可將封裝基板W分割成一個個地搭載有器件之複數個晶片C。In this way, in the processing position, the package substrate W held on the holding table 10 is cut by the
當由以上的切削單元40所進行之封裝基板W的切削加工結束時,封裝基板W會被第2搬送單元80吸引保持且從保持工作台10經過上表面洗淨組件50與下表面洗淨組件60來搬送到下表面乾燥組件70,在此封裝基板W的搬送過程中,該封裝基板W的上表面與下表面會分別被上表面洗淨組件50與下表面洗淨組件60洗淨。並且,上表面與下表面已被洗淨之封裝基板W,會被吸引保持在下表面乾燥組件70的乾燥工作台71上,而藉由下表面乾燥組件70讓下表面乾燥,並且藉由從落入組件90的暖風噴射噴嘴91所噴射之暖風來讓上表面乾燥。然後,像這樣上表面與下表面已乾燥之封裝基板W的經分割之複數個晶片C會被落入組件90投入到晶片容置組件4的投入口4a。When the cutting process of the package substrate W by the
如此一來,在晶片容置組件4中,已投入之複數個晶片C即容置於未圖示之晶片容置容器,且對1片封裝基板W之一連串的切削加工即結束。當如此進行而連續地進行對複數片封裝基板W的切削加工而在晶片容置容器內容置預定量的晶片C時,即可將抽屜95拉出而取出晶片容置容器,並於回收晶片C後,再將空的晶片容置容器設置(set)到晶片容置組件4。In this way, in the chip
其次,說明本發明之晶片C之搬送方法的實施形態。Next, an embodiment of the method of transporting the wafer C according to the present invention will be described.
以下,針對在切削裝置1中,將已吸引保持在保持工作台10上之封裝基板W的經分割之複數個晶片C藉由第2搬送單元80來吸引保持並搬送到下表面乾燥組件70之實施形態來說明。Hereinafter, in the
第1實施形態之晶片C之搬送方法的特徵在於將以下所說明之1)吸引保持步驟與2)上升步驟,分別實施2次以上(在本實施形態中為3次)。The wafer C transfer method of the first embodiment is characterized by performing the 1) suction and holding step and the 2) lifting step described below two or more times (three times in this embodiment).
在吸引保持步驟中,控制器100是將吸引保持步驟與上升步驟的次數n設定為0(n=0)來作為初始設定(圖6的步驟S1)。其次,控制器100將圖4所示之其中一個電磁開關閥V2開啟,且將另一個電磁開關閥V1關閉(步驟S2)。如此一來,自空氣供給源16讓空氣從分歧管14b經過配管14以及吸引路13、12而從開口於保持工作台10的保持面11之複數個未圖示的吸引孔噴出。因此,已保持在保持工作台10的保持面11之封裝基板W的經分割的複數個晶片C會變得容易從保持面11脫離。In the suction and hold step, the
在上述狀態下,將第2搬送單元80的搬送墊81如圖5(a)所示地定位在封裝基板W的上方(圖6之步驟S3),且藉由圖3所示之升降單元5使搬送墊81下降,而如圖5(b)所示,利用此搬送墊81的接觸面83來推壓保持工作台10上的複數個晶片C,並將這些晶片C吸引保持於接觸面83(步驟S4:吸引保持步驟)。再者,此時,因為控制器100已將圖4所示之電磁開關閥V3開啟,所以來自吸引源87之負壓會經過配管86以及吸引路85、84而到達接觸面83的吸引孔83a(參照圖2)。因此,雖然可受此負壓吸引而將保持工作台10上之複數個晶片C吸引保持在搬送墊81的接觸面83,但會有並非全部的晶片C都被吸引保持於接觸面83之情況,而有一部分的晶片C殘留在保持工作台10的保持面11之情形。In the above state, the
在接下來的上升步驟中,搬送墊81藉由圖3所示之升降單元5而如圖5(c)所示地上升預定高度h(步驟S5:上升步驟)。在此,搬送墊81上升之預定高度h是設定為小於晶片C的厚度t(h<t)。如此,藉由將搬送墊81上升之預定高度h設定為小於晶片C之厚度t,因為已吸引保持在搬送墊81的接觸面83之晶片C與未受到吸引保持之晶片C會於高度方向上重合圖5(c)所示之Δh而在高度方向上重疊,所以可讓未受到搬送墊81的接觸面83吸引之晶片C被保持在保持工作台10的保持面11之底面,相對於保持面11傾斜之角度限制在90°以下,較佳為30°以下,而不會有在接觸面83與保持面11之間豎立之情形。In the next rising step, the conveying
其次,計數吸引保持步驟(步驟S4)與上升步驟(步驟S5)之次數n(n=n+1)(步驟S6),並判定所計數之次數n是否已達到事先設定之次數(在本實施形態中為3次)(步驟S7)。在吸引保持步驟(步驟S4)與上升步驟(步驟S5)之次數n未達到預定之次數(n=3)的情況下(步驟S7:否),重複進行吸引保持步驟(步驟S4)與上升步驟(步驟S5)以及次數n的計數(n=n+1),在次數n已達到事先設定之次數(3次)的情況下(步驟S7:是),則驅動圖3所示之升降單元5來使搬送墊81如圖5(d)所示地上升比晶片C的厚度t更大之高度(步驟S8)。Next, count the number n (n=n+1) of the suction and holding step (step S4) and the rising step (step S5) (step S6), and determine whether the counted number n has reached the preset number (in this
在此,在本實施形態中,雖然將重複吸引保持步驟(步驟S4)與上升步驟(步驟S5)之次數n設定為3次(n=3),但在經驗上已得知以下情形:只要使吸引保持步驟與上升步驟重複3次,即如圖5(d)所示,可以將全部的晶片C吸引保持在搬送墊81的接觸面83。不過,此次數n並非是依晶片C的尺寸或數量都一律地設定之次數,且只要2次以上即可,可和晶片C的尺寸或數量相應而用來設定為適當的次數。Here, in this embodiment, the number n of repeating the suction and holding step (step S4) and the rising step (step S5) is set to three times (n=3). However, it is empirically known that the following situation occurs: as long as By repeating the suction and holding step and the lifting step three times, as shown in FIG. 5(d) , all the wafers C can be suctioned and held on the
將以上的吸引保持步驟與上升步驟重複預定的次數(3次)之結果,如圖5(d)所示,於接觸面83上吸引保持有全部的晶片C之搬送墊81,會被搬送至圖1所示之下表面乾燥組件70(步驟S9),且由本實施形態之搬送方法所進行之晶片C的一連串的搬送即結束(步驟S10)。As a result of repeating the above suction and holding step and the lifting step for a predetermined number of times (three times), as shown in FIG. 5(d) , the
如以上,在本實施形態中,因為進行成將吸引保持步驟與上升步驟進行3次,所以可得到可以將全部的晶片C以搬送墊81吸引保持並搬送之效果,其中前述吸引保持步驟是將搬送墊81的接觸面83朝已保持在保持工作台10的保持面11之複數個晶片C壓附來吸引保持該晶片C之步驟,前述上升步驟是在該吸引保持步驟之後使該搬送墊81上升之步驟。As described above, in this embodiment, since the suction and holding step and the lifting step are performed three times, it is possible to obtain the effect that all the wafers C can be suctioned, held and transported by the
其次,依據圖7以及圖8來說明本發明之晶片C之搬送方法的第2實施形態。再者,在圖7中,對和圖4中所示之要素相同的要素是附加相同符號,且以下會省略針對其等的再次的說明。Next, a second embodiment of the wafer C transportation method of the present invention will be described based on FIGS. 7 and 8 . In addition, in FIG. 7 , the same elements as those shown in FIG. 4 are assigned the same reference numerals, and further description thereof will be omitted below.
在本實施形態中,是如圖7所示,在配管86的中途設置壓力計88,控制器100是設成在藉由此壓力計88所檢測之負壓P的絕對值|P|低於預定的閾值|P
0|的情況下(|P|<|P
0|),會再次實施在前述第1實施形態中所說明之吸引保持步驟與上升步驟。亦即,在負壓P的絕對值|P|低於預定之閾值|P
0|的情況下(|P|<|P
0|),是因為在吸引保持步驟中存在有未被搬送墊81的接觸面83吸引之晶片C,因而產生有空氣的洩漏。從而,在本實施形態中,若負壓P的絕對值|P|大於預定之閾值|P
0|,則判斷為全部的晶片C皆已吸引保持在搬送墊81之情形。不過,在本實施形態中,是設成:在即使將吸引保持步驟與上升步驟重複事先設定之次數(在本實施形態中為5次),負壓P的絕對值|P|依然低於預定之閾值|P
0|的情況下(|P|<|P
0|),則判斷為搬送墊81因為某種原因而無法吸引保持全部的晶片C, 並通報錯誤且中斷處理。
In this embodiment, as shown in FIG. 7 , a
以下,依照圖8所示之流程圖來說明本實施形態之晶片C之搬送方法。Hereinafter, the method of transferring the wafer C according to this embodiment will be described based on the flowchart shown in FIG. 8 .
在本實施形態之晶片C之搬送方法中,也是和前述第1實施形態同樣,控制器100將吸引保持步驟與上升步驟的次數n設定為0(n=0)來作為初始設定(步驟S11)。其次,控制器100是將圖7所示之其中一個電磁開關閥V2開啟,且將另一個電磁開關閥V1關閉(步驟S12)。如此一來,自空氣供給源16讓空氣從分歧管14b經過配管14以及吸引路13、12而從開口於保持工作台10的保持面11之複數個未圖示的吸引孔噴出。因此,已保持在保持工作台10的保持面11之封裝基板W的經分割的複數個晶片C會變得容易從保持面11脫離。In the method of transferring the wafer C in this embodiment, similarly to the first embodiment, the
在上述狀態下,將第2搬送單元80的搬送墊81如圖5(a)所示地定位到封裝基板W的上方(步驟S13),且藉由圖3所示之升降單元5使搬送墊81下降,而如圖5(b)所示,以此搬送墊81之接觸面83推壓保持工作台10上的複數個晶片C,以將這些晶片C吸引保持到搬送墊81的接觸面83(步驟S14:吸引保持步驟)。In the above state, the
其次,和前述第1實施形態同樣地執行上升步驟(步驟S15)。也就是說,在上升步驟中,搬送墊81藉由圖3所示之升降單元5而如圖5(c)所示地上升預定高度h。Next, the rising step (step S15) is executed in the same manner as in the first embodiment. That is, in the raising step, the conveying
當執行上述上升步驟(步驟S15)時,可藉由圖7所示之壓力計88測定配管86的負壓P(步驟S16)。然後,計數吸引保持步驟(步驟S14)與上升步驟(步驟S15)的次數n(n=n+1)(步驟S17),並判定藉由壓力計88所測定之配管86的負壓P的絕對值|P|是否已超過預定的閾值|P
0|(步驟S18)。
When the above-mentioned rising step (step S15) is executed, the negative pressure P of the
在藉由壓力計88所測定之配管86的負壓P的絕對值|P|已超過預定的閾值|P
0|(|P|>|P
0|)之情況下(步驟S18:是),會判斷為全部的晶片C都已吸引保持在搬送墊81的接觸面83,並驅動圖3所示之升降單元5而使搬送墊81如圖5(d)所示地上升比晶片C的厚度t更大之高度(步驟S19)。然後,將於接觸面83吸引保持有全部的晶片C之搬送墊81搬送到圖1所示之下表面乾燥組件70(步驟S20),藉由本實施形態之搬送方法所進行之晶片C之搬送即結束(步驟S21)。
When the absolute value |P| of the negative pressure P in the
另一方面,在藉由壓力計88所測定之配管86的負壓P的絕對值|P|未超過預定的閾值|P
0|(|P|<|P
0|)之情況下(步驟S18:否),會判定吸引保持步驟與上升步驟的次數n是否已達到5次(步驟S22)。在此,若吸引保持步驟與上升步驟的次數n為未達到5次的情況下(步驟S22:否),會重複包含吸引保持步驟與上升步驟之步驟S14~S18之處理。
On the other hand, when the absolute value |P| of the negative pressure P in the
並且,當吸引保持步驟與上升步驟的重複次數n達到5次的情況下(S22:是),亦即即使將吸引保持步驟與上升步驟重複5次,在藉由壓力計88所測定之配管86的負壓P的絕對值|P|皆未超過預定的閾值|P
0|(|P|<|P
0|)的情況下,會進行錯誤顯示(步驟S23),並結束處理(步驟S21)。
Furthermore, when the number n of repetitions of the suction holding step and the rising step reaches 5 times (S22: Yes), that is, even if the suction holding step and the rising step are repeated 5 times, the pressure in the
如以上,在本實施形態中,因為是設成在藉由壓力計88所檢測之負壓P的絕對值|P|低於預定的閾值|P
0|之情況下(|P|<|P
0|),會再次實施吸引保持步驟與上升步驟,所以可得到可以將全部的晶片C以搬送墊81吸引保持並搬送之效果。
As described above, in this embodiment, it is assumed that the absolute value |P| of the negative pressure P detected by the
再者,在本實施形態中,雖然將吸引保持步驟與上升步驟的重複次數n的上限設定為5次,但此重複次數n的上限只要是複數次即可,可以設定成任意的次數。Furthermore, in this embodiment, the upper limit of the number of repetitions n of the suction and holding step and the ascending step is set to 5 times. However, the upper limit of the number of repetitions n can be set to any number as long as it is a plurality of times.
又,在本實施形態中,雖然是將次數n的上限值設為n=5(5次)來進行藉由壓力計88所測定之配管86的負壓P的絕對值|P|未超過預定的閾值|P
0|(|P|<|P
0|)之情況下的吸引保持步驟與上升步驟的重複,但亦可設成計測重覆進行吸引保持步驟與上升步驟之時間,並將吸引保持步驟與上升步驟重複到所計測之時間達到上限值為止。
Furthermore, in this embodiment, although the upper limit of the number of times n is set to n=5 (5 times), the absolute value |P| of the negative pressure P of the
順道一提,以上雖然已針對將本發明適用於切削加工封裝基板W之切削裝置1中的由第2搬送單元80進行之晶片C之搬送方法之形態來作說明,但是本發明對於加工封裝基板W以外之任意的工件之加工裝置中的晶片之搬送方法也可以同樣地適用。By the way, the above description has been made on the mode in which the present invention is applied to the method of transporting the wafer C by the
又,在以上之實施形態中,雖然在吸引保持步驟中,將從保持工作台10噴出之空氣的壓力與搬送墊81對晶片C之推壓力設成固定,但亦可設成讓這些空氣壓力與推壓力隨著吸引保持步驟與上升步驟的次數n增加而變高。Furthermore, in the above embodiment, in the suction and holding step, the pressure of the air blown out from the holding table 10 and the pressing force of the
另外,本發明並不限定於以上所說明之實施形態,且當然可在申請專利範圍以及說明書與圖式所記載之技術思想的範圍內進行各種變形。In addition, the present invention is not limited to the above-described embodiments, and it goes without saying that various modifications can be made within the scope of the patent application and the technical ideas described in the specification and drawings.
1:切削裝置 1A:基台 1B:支柱 2:片匣 3:暫置組件 4:晶片容置組件 4a:投入口 5:升降單元 6:滾珠螺桿軸 7:伺服馬達 8:導軌 10:保持工作台 11:保持面 12,13,84,85:吸引路 14,86:配管 14a,14b:分歧管 15,87:吸引源 16:空氣供給源 17:支撐構件 20:搬出單元 30:第1搬送單元 31:吸引墊 32:氣缸機構 33,82,94:作動臂 34:拍攝組件 40:切削單元 41:主軸殼體 42:切削刀片 50:上表面洗淨組件 60:下表面洗淨組件 61:洗淨輥 70:下表面乾燥組件 71:乾燥工作台 80:第2搬送單元 81:搬送墊 83:接觸面 83a:吸引孔 88:壓力計 90:落入組件 91:暖風噴射噴嘴 92:落入刷具 93:氣缸機構 95:抽屜 100:控制器 C:晶片 h:搬送墊的上升高度 Δh:晶片之重疊高度 P:負壓 P 0:負壓的閾值 t:晶片厚度 V1,V2,V3:電磁開關閥 W:封裝基板 S1~S10,S11~S23:步驟 +X,-X:X軸方向 +Y,-Y:Y軸方向 +Z,-Z:Z軸方向 1: Cutting device 1A: Base 1B: Pillar 2: Cassette 3: Temporary assembly 4: Wafer accommodating assembly 4a: Inlet 5: Lifting unit 6: Ball screw shaft 7: Servo motor 8: Guide rail 10: Keep working Station 11: Holding surface 12, 13, 84, 85: Suction path 14, 86: Piping 14a, 14b: Branch pipe 15, 87: Suction source 16: Air supply source 17: Support member 20: Unloading unit 30: First transport Unit 31: Suction pad 32: Cylinder mechanism 33, 82, 94: Actuating arm 34: Shooting assembly 40: Cutting unit 41: Spindle housing 42: Cutting blade 50: Upper surface cleaning assembly 60: Lower surface cleaning assembly 61: Washing roller 70: Lower surface drying unit 71: Drying table 80: Second transport unit 81: Transport pad 83: Contact surface 83a: Suction hole 88: Pressure gauge 90: Drop unit 91: Warm air injection nozzle 92: Drop Inserting brush 93: Cylinder mechanism 95: Drawer 100: Controller C: Wafer h: Lifting height of transfer pad Δh: Overlapping height of wafer P: Negative pressure P 0 : Threshold of negative pressure t: Wafer thickness V1, V2, V3 :Solenoid switch valve W: Package substrate S1~S10, S11~S23: Step+X,-X:X-axis direction+Y,-Y:Y-axis direction+Z,-Z:Z-axis direction
圖1是用於實施本發明之晶片之搬送方法的切削裝置的局部立體圖。 圖2是搬送墊的底面圖。 圖3是圖1所示之切削裝置的升降單元的側面圖。 圖4是用於實施本發明的第1實施形態之晶片之搬送方法的搬送單元的概略構成圖。 圖5之(a)~(d)是將實施本發明之晶片之搬送方法的程序依其步驟順序來顯示之搬送單元主要部位的局部側面圖。 圖6是顯示實施本發明的第1實施形態之晶片之搬送方法的程序的流程圖。 圖7是用於實施本發明的第2實施形態之晶片之搬送方法的搬送單元的概略構成圖。 圖8是顯示實施本發明的第2實施形態之晶片之搬送方法的程序的流程圖。 FIG. 1 is a partial perspective view of a cutting device used to implement the wafer transport method of the present invention. Fig. 2 is a bottom view of the transfer pad. FIG. 3 is a side view of the lifting unit of the cutting device shown in FIG. 1 . 4 is a schematic structural diagram of a transfer unit for implementing the wafer transfer method according to the first embodiment of the present invention. 5 (a) to (d) are partial side views of the main parts of the transfer unit showing the procedure for implementing the wafer transfer method of the present invention in the order of steps. FIG. 6 is a flowchart showing a procedure for implementing the wafer transfer method according to the first embodiment of the present invention. 7 is a schematic structural diagram of a transfer unit for implementing the wafer transfer method according to the second embodiment of the present invention. FIG. 8 is a flowchart showing a procedure for implementing the wafer transfer method according to the second embodiment of the present invention.
5:升降單元 5:Lifting unit
10:保持工作台 10: Keep the workbench
11:保持面 11: Keep the surface
12,13,84,85:吸引路 12,13,84,85: Attraction Road
14,86:配管 14,86:Piping
14a,14b:分歧管 14a,14b: Branch pipe
15,87:吸引源 15,87: source of attraction
16:空氣供給源 16: Air supply source
81:搬送墊 81:Transfer pad
83:接觸面 83:Contact surface
100:控制器 100:Controller
C:晶片 C:wafer
V1,V2,V3:電磁開關閥 V1, V2, V3: electromagnetic switch valve
Claims (3)
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JP2022126263A JP2024022857A (en) | 2022-08-08 | 2022-08-08 | How to transport chips |
JP2022-126263 | 2022-08-08 |
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TW202407781A true TW202407781A (en) | 2024-02-16 |
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TW112129171A TW202407781A (en) | 2022-08-08 | 2023-08-03 | Chip transportation method that is used to transport a plurality of chips in a processing apparatus that includes a holding worktable for holding the plurality of chips thereon and a transport-out unit for removing the chips from the holding worktable |
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JP (1) | JP2024022857A (en) |
KR (1) | KR20240020672A (en) |
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