TW202405968A - A method of semiconductor processing and apparatus - Google Patents

Abstract

A method of semiconductor processing including the following steps is provided: providing a semiconductor substrate; forming an adhesive layer on a surface of the semiconductor substrate, wherein the adhesive layer includes a first area and a second area, and the second area is closer to the edge of the semiconductor substrate than the first area; and passing a light beam through an apparatus to semi-cure the second region of the adhesive layer on the surface of the semiconductor substrate, wherein the chief ray direction of the light beam directed from the apparatus to the adhesive layer is substantially parallel to the surface of the semiconductor substrate.

Description

Semiconductor processing methods and tools

The present invention relates to a semiconductor processing method and a tool, and in particular to a method of semi-curing an adhesive layer located on an edge surface of a semiconductor substrate and a corresponding tool.

In semiconductor manufacturing processes, tape is often used to temporarily protect surfaces. However, if the adhesive layer of the tape oozes or leaks, its protection of the aforementioned surface may be reduced, thereby affecting the yield and/or throughput of the process.

The present invention provides a semiconductor processing method and tool, which can improve the yield and/or production volume of the semiconductor process.

The mold of the present invention is suitable for allowing a light beam to pass through it to semi-cure the glue layer located on the edge surface of the semiconductor substrate. The tool includes a light input part and a light output part. The light incident part is suitable for directing the light beam towards the tool. The light output part is suitable for directing the light beam from the mold to the adhesive layer. The main ray direction of the light beam emitted from the mold to the adhesive layer is substantially parallel to the surface of the semiconductor substrate.

In one embodiment of the present invention, the beam angle of the light beam directed to the mold is smaller than the beam angle of the light beam emitted from the mold to the adhesive layer.

In one embodiment of the present invention, the mold includes a reflective area, and the light input part and the light output part are both located in the reflective area of the mold.

In one embodiment of the present invention, the mold includes a light-transmitting material, and the light beam is injected into the mold from the light input part to cause scattering, and then is emitted from the mold through the light exit part. The light input part and the light exit part are located on different sides of the mold. .

In one embodiment of the invention, the tool is a passive tool without a light source.

The semiconductor processing method of the present invention includes the following steps: providing a semiconductor substrate; forming an adhesive layer on the surface of the semiconductor substrate, wherein the adhesive layer includes a first area and a second area, and the second area is closer to the edge of the semiconductor substrate than the first area. ; Place the semiconductor substrate on the mold with the glue layer facing the mold; and allow the light beam to semi-solidify through only the second area of the glue layer of the mold, in which the main ray direction of the light beam emitted from the mold to the glue layer substantially parallel to the surface of the semiconductor substrate.

In one embodiment of the present invention, a method for forming an adhesive layer on a surface of a semiconductor substrate includes: coating the adhesive layer on a base material; and covering the base material and the adhesive layer thereon on the surface of the semiconductor substrate When the base material is a light-transmitting material, an opaque light-shielding material is formed between the adhesive layer and the base material or on the other side of the base material that is not covered by the adhesive layer.

In one embodiment of the present invention, in the process of allowing the light beam to pass through the mold to semi-cure only the second area of the adhesive layer, there is a distance between the mold and the adhesive layer or the semiconductor substrate, and the light source that provides the beam is There is a gap between the tools.

In an embodiment of the present invention, the semiconductor processing method further includes the following steps: after semi-curing the second area of the adhesive layer, performing an irradiation step on the first area and the second area of the adhesive layer to remove Glue layer.

In one embodiment of the present invention, the semiconductor processing method further includes the following steps: after semi-curing the second area of the adhesive layer, and before irradiating the first area and the second area of the adhesive layer, The semiconductor substrate is subjected to a wet process or a grinding process.

Based on the above, in a step or process, through the aforementioned semiconductor processing method, the adhesive layer can protect the surface of the semiconductor substrate or the components or wires located on the surface. Moreover, through the semi-cured second zone of the adhesive layer, the yield and/or production volume can be correspondingly improved. In addition, in the aforementioned semiconductor processing method, using corresponding tools can improve the yield and/or throughput of the semiconductor process.

Some embodiments are enumerated below and described in detail with the accompanying drawings, but the provided embodiments are not intended to limit the scope of the present invention. In addition, the drawings are for illustrative purposes only and may not be drawn to original size. To facilitate understanding, the same components in the following description will be labeled with the same symbols.

The terms "including", "having", etc. used in the article are all open terms; that is, they include but are not limited to. Regarding the terms "basically", "approximately", "approximately", etc. used in the text, they may include an acceptable tolerance range. The directional terms mentioned in the article, such as "up", "down", etc., are only used to refer to the direction of the drawings; therefore, the directional terms used are for explanation and not for limiting the present invention.

FIG. 1 is a partial flowchart of a semiconductor processing method according to an embodiment of the present invention. 2A and 2B are partial flow diagrams of a semiconductor processing method according to an embodiment of the present invention.

In this embodiment, the semiconductor processing method may be part of a semiconductor (such as integrated circuit (integrated circuit; IC)) manufacturing process.

Referring to FIG. 1 , in step S1 , a semiconductor substrate 700 (marked in FIG. 2A ) is provided. The semiconductor substrate 700 has an active surface (one of the surfaces of the semiconductor substrate 700 ) 701 and a back surface (the other of the surfaces of the semiconductor substrate 700 ) 702 . The active side 701 is opposite to the back side 702 .

In this embodiment, the semiconductor substrate 700 may include a silicon wafer, but the invention is not limited thereto.

In this embodiment, the active surface 701 of the semiconductor substrate 700 may include active components (such as transistors), passive components (such as capacitors, resistors or inductors) formed by common semiconductor processes, and/or corresponding Wires (such as interconnects), but the invention is not limited thereto.

Please refer to Figure 1. In an embodiment, step S2 can be selectively performed according to requirements. In other words, the present invention does not limit whether step S2 needs to be executed or not.

For example, step S2 may include placing the aforementioned semiconductor substrate 700 on a suitable platform or carrier to facilitate subsequent steps, but the invention is not limited thereto.

For another example, step S2 may include corresponding transmission steps, but the invention is not limited thereto.

Referring to FIG. 1 , in step S3 , a glue layer 520 is formed on a surface of the semiconductor substrate 700 . For example, as shown in FIG. 2A , a glue layer 520 can be formed on the active surface 701 of the semiconductor substrate 700 .

The glue layer 520 includes a first area 521a and a second area 522a. In a top view state (ie, viewed in a direction facing the active surface 701 or the back surface 702 of the semiconductor substrate 700 ), the second region 522 a is closer to the edge of the semiconductor substrate 700 than the first region 521 a. In one embodiment, the second area 522a may surround the first area 521a when viewed from above.

In step S3, the curing degree of the second region 522a is substantially the same as the curing degree of the first region 521a, and/or the viscosity of the second region 522a is substantially the same as the viscosity of the first region 521a.

In this embodiment, the adhesive layer 520 may be coated on a base material 510 first. Then, the glue layer 520 is made to face one surface of the semiconductor substrate 700 (such as the active surface 701 ), so that the aforementioned base material 510 and the glue layer 520 coated thereon can completely cover the aforementioned surface of the semiconductor substrate 700 . surface. In one embodiment, the sheet composed of the adhesive layer 520 and the base material 510 may be called a laminate sheet, but the invention is not limited thereto. In one embodiment, the aforementioned sheet (ie, laminate) may further include a release layer (not shown).

In one embodiment, the material of the aforementioned substrate 510 may include polyolefin (such as polyethylene, polypropylene or derivatives thereof) or other suitable polymer materials.

In one embodiment, the aforementioned base material 510 may be an opaque light-shielding material.

In an embodiment not shown, if the aforementioned base material (for example, structurally similar to the base material 510 but may be light-transmissive) is a light-transmissive material, then the adhesive layer can be disposed relative to its surface facing the semiconductor substrate. An opaque light-shielding material is formed on the other side. That is to say, if it is a light-transmissive base material, an opaque light-shielding material can be formed between the adhesive layer 520 and the light-transmissive base material; or on the other side of the light-transmissive base material that does not cover the adhesive layer 520 .

In one embodiment, the material of the adhesive layer 520 may include release agent, acrylic glue and photoinitiator. In one embodiment, the adhesiveness of the adhesive layer 520 may decrease relatively as the degree of curing increases. For example, the composition of the glue layer 520 can be cross-linked to a corresponding degree (such as imidization, but not limited to) by irradiating light or heating (such as irradiating infrared rays), so that the glue layer 520 can be The curing degree increases, and the adhesiveness of the adhesive layer 520 is relatively reduced.

Please refer to Figure 1. In an embodiment, step S4 can be selectively performed according to requirements. In other words, the present invention does not limit whether step S4 needs to be executed or not.

For example, as shown in FIG. 3A or FIG. 4A , step S4 may include placing the semiconductor substrate 700 covered with the adhesive layer 520 in a suitable mold (such as the mold 300 in FIG. 3A or FIG. 4A 400 (the same or similar will be described below) to facilitate subsequent steps, but the invention is not limited thereto.

For another example, step S4 may include corresponding transmission steps, but the invention is not limited thereto.

Referring to FIG. 1 , in step S5 , a semi-curing step is performed on the second area of the adhesive layer 520 (that is, the uncured second area 522a becomes a semi-cured second area 522b).

In this embodiment, the second region 522a of the adhesive layer 520 located on the semiconductor substrate 700 can be semi-cured through a mold. That is to say, in step S5, the second region 522a may be semi-cured, but the first region 521a is not substantially cured. That is to say, the semiconductor substrate 700 shown in FIG. 2B is formed through the aforementioned semi-curing step, in which the second region 522b (corresponding to the second region 522a in FIG. 2A) has a greater degree of curing than the first region 521b (corresponding to the second region 522a in FIG. 2A). The degree of solidification of the first region 521a in Figure 2A, and the viscosity of the second region 522b is smaller than the viscosity of the first region 521b.

The detailed method or the corresponding mold for performing the semi-curing step on the second region 522a of the adhesive layer 520 on the semiconductor substrate 700 may be as described in subsequent embodiments. Simply put, a light beam suitable for the glue layer semi-curing step can be passed through the mold to semi-cure the second region 522a of the glue layer 520 on the surface of the semiconductor substrate 700, wherein the light beam is emitted from the mold to The chief ray direction of the light beam of the glue layer is substantially parallel to the active surface 701 or the back surface 702 of the semiconductor substrate 700 . It is worth noting that the aforementioned "basically" term can include the acceptable allowable range in the semi-cured production of the adhesive layer, such as: ±10∘; preferably; it can be about the range of ±5∘; more preferably ; Can be in the range of approximately ±3∘.

In one embodiment, the light beam suitable for performing the glue layer semi-curing step may include ultraviolet light. In one embodiment, the wavelength range of the aforementioned ultraviolet light is approximately between 320 nanometer (nm) and 400 nanometer. In one embodiment, the wavelength range of the aforementioned ultraviolet light is approximately between 350 nm and 360 nm. In one embodiment, the wavelength of the aforementioned ultraviolet light is substantially 355 nm.

In one embodiment, the light beam suitable for performing the glue layer semi-curing step can be provided by a corresponding light source. In one embodiment, the aforementioned light source may include a mercury lamp or a light-emitting diode.

In one embodiment, the light source and the fixture may be different devices or components.

In one embodiment, during the semi-curing step of the adhesive layer, there may be a corresponding distance between the light source and the tool. That is to say, the light source and the mold may not be in contact with each other, and the light source and the mold may be separated from each other, but the invention is not limited thereto.

In one embodiment, during the semi-curing step of the glue layer, there may be a gap between the mold and the glue layer 520 or the semiconductor substrate 700 . That is to say, the mold and the glue layer 520/semiconductor substrate 700 may not be in contact with each other, and the mold and the glue layer 520/semiconductor substrate 700 may be separated from each other, but the invention is not limited thereto.

Please refer to Figure 1. In an embodiment, step S6 can be selectively performed according to requirements. In other words, the present invention does not limit whether step S6 needs to be executed or not.

For example, step S6 may include grinding the back surface 702 of the semiconductor substrate 700, but the invention is not limited thereto.

For another example, step S6 may include corresponding transmission steps, but the invention is not limited thereto.

In an embodiment, step S6 may include performing a wet process on the semiconductor substrate 700 . For example, step S6 may include immersing or flowing the semiconductor substrate 700 and the glue layer 520 (including the uncured first region 521b and the semi-cured second region 522b) into the liquid. The aforementioned liquid includes, for example, etching liquid or cleaning liquid, but the present invention is not limited thereto. In this way, when the semiconductor substrate 700 is subjected to a wet process, the adhesive layer 520 can protect the components or wires located on the active surface 701 of the semiconductor substrate 700 . Moreover, the semi-cured second area 522b of the adhesive layer 520 can reduce the outflow of the adhesive layer (such as the outflow of the uncured first area 521b), and the semi-cured second area 522b still has considerable adhesion. In this way, the yield and/or throughput of the semiconductor process can be improved.

Referring to FIG. 1 , in step S7 , the adhesive layer 520 located on the active surface 701 of the semiconductor substrate 700 can be comprehensively irradiated with light (such as ultraviolet light) to reduce the adhesion force of the adhesive layer 520 (e.g. almost completely photocured or partially carbonized). In one embodiment, the wavelength range of the aforementioned ultraviolet light is approximately between 320 nanometers and 400 nanometers. In one embodiment, the wavelength range of the aforementioned ultraviolet light is approximately between 350 nm and 360 nm. In one embodiment, the wavelength of the aforementioned ultraviolet light is substantially 355 nm.

Referring to FIG. 1 , in step S8 , the glue layer 520 is removed. For example, after step S7, the adhesive force of the glue layer 520 decreases. In this way, the adhesive layer 520 or the corresponding base material 510 can be easily separated from the active surface 701 of the semiconductor substrate 700 by peeling off.

In the aforementioned semiconductor processing method, a tool suitable for use may be as follows. That is to say, in the mold described in the subsequent embodiments, one application method is to allow the light beam to pass through it to semi-cure the glue layer located on the edge surface of the semiconductor substrate.

FIG. 3A is a schematic side view of a semiconductor processing method according to an embodiment of the present invention. FIG. 3B may be an enlarged view corresponding to the region R1 in FIG. 3A.

As shown in FIG. 3A , the semiconductor substrate 700 covered with the glue layer 520 can be placed on the mold 300 with the glue layer 520 facing the mold 300 to perform semi-curing production of the glue layer 520 . In an embodiment not shown, there may be a support member or a height adjustment member between the semiconductor substrate 700 covered with the adhesive layer 520 and the mold 300, but the invention is not limited thereto.

Referring to FIG. 3A and FIG. 3B , the mold 300 includes a light input part 310 and a light output part 320 . The light beam L1 may be adapted to be directed toward the light incident portion 310 of the mold 300 . Moreover, the optical path of the light beam can be changed by the mold 300, so that the light beam L2 is emitted from the light exit portion 320 of the mold 300 to the adhesive layer 520 located on the surface of the semiconductor substrate 700. Furthermore, the main ray direction of the light beam L2 emitted from the mold 300 to the adhesive layer 520 is substantially parallel to the surface of the semiconductor substrate 700 . It is worth noting that the aforementioned "basically" term may include an acceptable range for semi-curing the adhesive layer 520, such as: ±10∘; preferably, it can be about a range of ±5∘; more preferably Ground; can be approximately within the range of ±3∘. In addition, for simplicity of expression, the corresponding light beams in FIG. 3A and FIG. 3B are simply represented by arrows and are not labeled one by one.

In this embodiment, the tool 300 is a passive tool without a light source.

In this embodiment, the light entrance part 310 and the light exit part 320 are located on different sides of the mold 300 respectively. Moreover, the light beam L1 emitted from the light source 390 can be incident into the mold 300 from the light incident part 310 of the mold 300; then, the light beam can be scattered by the material of the mold 300; then, the scattered light beam can be scattered from the mold 300. The light emitting part 320 of the tool 300 emits out of the tool 300 to the adhesive layer 520 . That is to say, the beam angle (beam angle) of the light beam L1 emitted to the mold 300 is smaller than the beam angle of the light beam L2 emitted from the mold 300 to the adhesive layer 520 .

In this embodiment, the material of the tool 300 may include a light-transmitting material. For example, the material of the tool 300 may include glass, quartz or light-transmitting polymer (such as acrylic; but not limited to). In the process of making the aforementioned device, particles can be added to cause the light beam penetrating the interior of the device 300 to scatter accordingly; Rapid cooling is used to produce corresponding cleavage/grains/grain boundaries/grain, so that the light beam penetrating the inside of the mold 300 produces corresponding scattering. That is to say, the mold 300 can penetrate the interior of the mold 300 through the particles or cleavage/grains/grain boundaries/small particles 330 in the mold 300 in a manner similar to the Tyndall effect. The beam produces corresponding scattering.

It is worth noting that when describing the light-transmitting material of the mold 300, "light-transmitting" refers to the light that can produce at least semi-cured light in the corresponding illuminated area of the adhesive layer 520, and there is no limit to its light transmittance.

In this embodiment, the light source 390 may include a fixed light source, but the invention is not limited thereto.

FIG. 4A is a schematic side view of a semiconductor processing method according to an embodiment of the present invention. FIG. 4B may be an enlarged view corresponding to the region R2 in FIG. 4A.

As shown in FIG. 4A , the semiconductor substrate 700 covered with the glue layer 520 can be placed on the mold 400 with the glue layer 520 facing the mold 400 to perform semi-curing production of the glue layer 520 . In an embodiment not shown, there may be a support member or a height adjustment member between the semiconductor substrate 700 covered with the adhesive layer 520 and the mold 400, but the invention is not limited thereto.

Referring to FIGS. 4A and 4B , the mold 400 includes a light incident part 410 and a light output part 420 . The light beam L1 may be adapted to be directed toward the light incident portion 410 of the mold 400 . Moreover, the optical path of the light beam can be changed by the mold 400, so that the light beam L2 is emitted from the light exit portion 420 of the mold 400 to the adhesive layer 520 located on the surface of the semiconductor substrate 700. Furthermore, the main ray direction of the light beam L2 emitted from the mold 400 to the glue layer 520 is substantially parallel to the surface of the semiconductor substrate 700 . The tool 400 can be made of a light-transmitting material or an opaque material. It includes a reflective area (ie, the light-incoming part 410 and the light-emitting part 420) that can change the traveling path of the light beam. The surface outside the reflective area can include a light-absorbing material. Prevents unwanted beams from reacting. It is worth noting that the aforementioned "basically" term may include an acceptable allowable range in the semi-cured production of the adhesive layer 520, such as: ±10∘; preferably, it can be about a range of ±5∘; more preferably Ground; can be approximately within the range of ±3∘. In addition, for simplicity of expression, the corresponding light beams in FIG. 3A and FIG. 3B are simply represented by arrows and are not labeled one by one.

In this embodiment, the tool 400 is a passive tool without a light source.

In this embodiment, the light entrance part 410 and the light exit part 420 are located on the same side of the mold 400 . For example, the light input part 410 and the light output part 420 may be the same surface of the mold 400, and the light beam L1 emitted from the light source 490 may be reflected by the aforementioned surface of the mold 400 and directed to the adhesive layer 520 accordingly. of beam L2. The aforementioned surface of the mold 400 may be a haze surface with appropriate roughness, so that the beam angle of the light beam L1 directed to the mold 400 is smaller than the beam angle L2 of the light beam L2 emitted from the mold 400 to the adhesive layer 520 beam angle.

In one embodiment, the aforementioned reflective surface of the tool 400 can be covered with an appropriate film layer (such as a filter layer).

In this embodiment, the light source 490 may include a movable light source, but the invention is not limited thereto.

In summary, in a step or process, through the aforementioned semiconductor processing method, the adhesive layer can protect the surface of the semiconductor substrate or the components or wires located on the surface. Moreover, through the semi-cured second zone of the adhesive layer, the yield and/or production volume can be correspondingly improved. In addition, in the aforementioned semiconductor processing method, using corresponding tools can improve the yield and/or throughput of the semiconductor process.

300, 400: Tools 310, 410: light incident part 320, 420: light emitting part 330: Particles or cleavage/grains/grain boundaries/small particles 390, 490: light source 700:Semiconductor substrate 701: Active side 702: Back 520: Adhesive layer 521a, 521b: first area 522a, 522b: Second area L1, L2: beam S1, S2, S3, S4, S5, S6, S7, S8: steps

FIG. 1 is a partial flow diagram of a semiconductor processing method according to an embodiment of the present invention. 2A and 2B are partial flow diagrams of a semiconductor processing method according to an embodiment of the present invention. 3A to 3B are schematic side views of a semiconductor processing method according to an embodiment of the present invention. 4A to 4B are schematic side views of a semiconductor processing method according to an embodiment of the present invention.

S1, S2, S3, S4, S5, S6, S7, S8: steps

Claims (10)

A tool suitable for passing a light beam to semi-cure an adhesive layer located on an edge surface of a semiconductor substrate, and the tool includes: The light incident part is adapted to direct the light beam towards the tool; and The light emitting part is adapted to direct the light beam from the mold to the glue layer, wherein the main ray direction of the light beam from the mold to the glue layer is substantially parallel to the semiconductor substrate. the surface. The mold according to claim 1, wherein the beam angle of the light beam emitted to the mold is smaller than the beam angle of the light beam emitted from the mold to the adhesive layer. The mold according to claim 2, wherein the mold includes a reflective area, and the light incident part and the light exit part are both located in the reflective area of the mold. The mold according to claim 2, wherein the mold includes a light-transmitting material, and the light beam is incident into the mold from the light incident part, causing scattering and then emitted from the light output part of the mold. , the light entrance part and the light exit part are located on different sides of the mold. The tool according to claim 1, which is a passive tool without a light source. A method of semiconductor processing, including: Provide semiconductor substrates; Forming a glue layer on the surface of the semiconductor substrate, wherein the glue layer includes a first area and a second area, and the second area is closer to the edge of the semiconductor substrate than the first area; placing the semiconductor substrate on a mold with the adhesive layer facing the mold; and The light beam is passed through the mold to semi-cure only the second area of the glue layer, wherein the main ray direction of the light beam emitted from the mold to the glue layer is substantially parallel to the The surface of the semiconductor substrate. The method of semiconductor processing according to claim 6, wherein the method of forming the adhesive layer on the surface of the semiconductor substrate includes: Coating the adhesive layer on a substrate; and The base material and the adhesive layer thereon are covered on the surface of the semiconductor substrate, wherein when the base material is a light-transmitting material, another layer is between the adhesive layer and the base material or An opaque light-shielding material is formed on the other side of the base material that does not cover the adhesive layer. The method of semiconductor processing according to claim 6, wherein in the process of allowing the light beam to semi-cure only the second area of the adhesive layer through the tool, the tool and the There is a distance between the glue layer or the semiconductor substrate, and there is a distance between the light source that provides the light beam and the tool. The method of semiconductor processing as described in claim 6 further includes: After performing the semi-curing step on the second area of the adhesive layer, an illumination step is performed on the first area and the second area of the adhesive layer to remove the adhesive layer. The method of semiconductor processing as described in claim 9 further includes: After performing the semi-curing step on the second region of the glue layer, and before performing the illumination step on the first region and the second region of the glue layer, the semiconductor The substrate undergoes a wet process or a grinding process.

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