TWM492523U - Photomask protection film component - Google Patents

Photomask protection film component Download PDF

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Publication number
TWM492523U
TWM492523U TW103214339U TW103214339U TWM492523U TW M492523 U TWM492523 U TW M492523U TW 103214339 U TW103214339 U TW 103214339U TW 103214339 U TW103214339 U TW 103214339U TW M492523 U TWM492523 U TW M492523U
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Taiwan
Prior art keywords
frame
reticle
wafer
activated
protective film
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TW103214339U
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Chinese (zh)
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Ching-Bore Wang
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Micro Lithography Inc
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Priority to TW103214339U priority Critical patent/TWM492523U/en
Publication of TWM492523U publication Critical patent/TWM492523U/en

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Description

光罩保護膜組件Photomask protective film assembly

本創作是有關一種光罩保護膜組件,特別是一種能夠用於極紫外線(EUV)微影製程之光罩保護膜組件。The present invention relates to a reticle protective film assembly, and more particularly to a reticle protective film assembly that can be used in an extreme ultraviolet (EUV) lithography process.

隨著半導體裝置高度積體化,微影所形成的圖案也跟著微細化,現在圖案寬度達到20nm左右的裝置也進入實用階段。而目前使用193nm已經可以做到14nm製程,14nm以下仍要使用極紫外線(EUV:Extreme Ultra Violet)的微影,開始受到重視。而目前用於光罩保護薄膜組件而言,對於實現EUV用光罩保護膜組件卻仍然有許多的技術問題需要解決,如以光罩保護膜黏貼在光罩上以阻絕微塵直接掉落在光罩上,造成晶圓曝光之缺失。As the semiconductor device is highly integrated, the pattern formed by the lithography is also miniaturized, and devices having a pattern width of about 20 nm are now in practical use. At present, the 14nm process can be achieved using 193nm, and the ultra-violet (EUV: Extreme Ultra Violet) lithography is still under 14nm. At present, for the reticle protective film assembly, there are still many technical problems to be solved for implementing the reticle protective film module for EUV, such as a visor protective film adhered to the reticle to prevent the dust from falling directly on the light. On the cover, the wafer exposure is missing.

且目前一般光罩所使用的光罩保護膜都是透過有機黏接劑黏附於一框架上,有機黏劑在儲存或運送光罩過程中即會產生有害氣體,對光罩會造成損壞,且若光罩保護模是採用有機膜時,由於EUV微影主要採用波長為10-14nm的極紫外光作為光源,可使曝光波長一下子降到13.5nm,如此將能夠把微影技術擴展到20nm以下的特徵尺寸,但13.5nm波長的光當照射於有機膜或是有機黏接劑時,即會破壞有機質之結構,造成有機質被分解,而產生出有害的氣體出來,如此將會導致環境的汙染與造成設備的提早損壞的情況發生,因此如何克服以上問題,將是業界中急需解決的問題。At present, the reticle protective film used in the general reticle is adhered to a frame through an organic adhesive, and the organic adhesive generates harmful gas during the process of storing or transporting the reticle, which may cause damage to the reticle, and If the reticle protection mode is an organic film, since the EUV lithography mainly uses extreme ultraviolet light having a wavelength of 10-14 nm as a light source, the exposure wavelength can be lowered to 13.5 nm at a time, so that the lithography technology can be extended to 20 nm. The following characteristic dimensions, but when the light of 13.5 nm wavelength is irradiated on the organic film or the organic binder, the structure of the organic matter is destroyed, and the organic matter is decomposed, and harmful gases are generated, which will lead to the environment. Contamination and premature damage to equipment occur, so how to overcome the above problems will be an urgent problem in the industry.

因此,若能夠不使用有機膜與有機黏接劑,但亦能夠做為防塵薄膜使用、以及能夠黏附於一框架上,如此應為一最佳解決方案。Therefore, if the organic film and the organic adhesive can be used, but it can also be used as a dustproof film and can be adhered to a frame, this should be an optimum solution.

本創作係關於一種光罩保護膜組件,係能夠將晶矽薄膜做為防塵薄膜使用,並以離子束或快速原子束照射的方式產生黏性表面以取代有機黏接劑,避免產生有害氣體,造成環境汙染及設備損壞。The present invention relates to a reticle protective film module capable of using a wafer film as a dustproof film and generating a viscous surface by means of ion beam or fast atomic beam irradiation to replace the organic binder to avoid generation of harmful gases. Cause environmental pollution and equipment damage.

本創作所採用之光罩保護膜係利用失焦原理,使得保護膜上之微塵不會在晶圓上成像,致使良率提高,故大部分光罩均需要光罩保護膜,EUV光罩也需要。The reticle protective film used in this creation uses the principle of defocusing, so that the dust on the protective film will not be imaged on the wafer, resulting in an increase in yield, so most masks require a reticle protective film, and the EUV reticle also need.

一種光罩保護膜組件,包括:一框架,係具有二個結合面,其中一結合面係為經由離子束或快束原子束照射而活化形成的一黏性表面;以及一晶矽薄膜,係具有二個表面,其中一表面係為經由離子束照射而活化形成的一黏性表面;係將晶矽薄膜經活化後的黏性表面覆蓋於框架經活化後的結合面,使該晶矽薄膜的表面與框架結合面相黏合,該晶矽薄膜緊密結合於該框架上。A reticle protective film assembly comprising: a frame having two bonding faces, wherein a bonding surface is a viscous surface activated by irradiation with an ion beam or a fast beam atom beam; and a wafer film Having two surfaces, one of which is a viscous surface formed by activation by ion beam irradiation; the activated viscous surface of the wafer film is coated on the activated bonding surface of the frame to make the wafer film The surface is bonded to the frame bonding surface, and the wafer film is tightly bonded to the frame.

一種光罩保護膜組件製造方法,其步驟為:將一晶矽薄膜之其中一表面及一框架之其中一結合面進行離子束或快束原子束照射後,使該晶矽薄膜及框架受到離子束照射的表面會被活化形成一黏性表面;之後,則將該晶矽薄膜具有黏性之表面黏附於該框架具有黏性的結合面上,使晶矽薄膜緊密黏合於框架上。A method for manufacturing a reticle protective film module, comprising the steps of: irradiating an ion beam or a frame with one of a surface of a crystalline germanium film and a bonding surface of a frame by ion beam or a fast beam atomic beam; The surface of the beam irradiation is activated to form a viscous surface; after that, the viscous surface of the wafer film is adhered to the viscous bonding surface of the frame, so that the wafer film is closely adhered to the frame.

上述之晶矽薄膜之厚度為20~100nm。The above-mentioned wafer film has a thickness of 20 to 100 nm.

上述之說明中,更包含一光罩,該光罩至少具有一表面,係將光罩之表面與該框架未經活化之另一結合面經由離子束照射活化成為黏性表面,使該已黏附晶矽薄膜之框架則能夠再黏附於該光罩之表面上。The above description further includes a reticle having at least one surface for activating the bonding surface of the reticle and the other unbonded surface of the frame to become a viscous surface by ion beam irradiation, so that the affixed The frame of the wafer film can then be adhered to the surface of the reticle.

上述之說明中,更包含一增高框架,該增高框架具有二個結合面,係將增高框架之其中一結合面及框架未經活化之另一結合面經由離子束照射活化成為黏性表面,使該已黏附晶矽薄膜之框架則能夠再黏附於該增高框架已活化的結合面上。The above description further includes an increasing frame having two bonding faces, wherein one of the bonding faces of the elevated frame and the other bonding surface of the frame that is not activated are activated by ion beam irradiation to become a viscous surface. The frame of the adhered wafer film is capable of re-adhering to the activated bonding surface of the elevated frame.

有關於本創作其他技術內容、特點與功效,在以下配合參考圖式之較佳實施例的詳細說明中,將可清楚的呈現。Other technical contents, features, and effects of the present invention will be apparent from the following detailed description of the preferred embodiments.

請參閱第1A圖及第1B圖,為本創作光罩保護膜組件之分解結構示意圖及結合結構示意圖,由圖中可知,該光罩保護膜組件包括一框架1及一晶矽薄膜2,其中該框架1係具有一第一結合面11及一第二結合面12,而該晶矽薄膜2之其中一表面及框架1的第一結合面11經過離子束或快速原子束照射後,使該晶矽薄膜2的一表面及框架1的第一結合面11會被活化形成一黏性表面21、111,將晶矽薄膜2活化後的黏性表面21與框架1活化後之第一結合面11相覆蓋黏合,因該晶矽薄膜2之黏性表面21及框架1之第一結合面11皆具有黏性,因此,該晶矽薄膜2與該框架1之第一結合面11可緊密黏合,不易脫離,以取代傳統有機黏劑。另外,該晶矽薄膜2係為單晶矽薄膜或多晶矽薄膜。Please refer to FIG. 1A and FIG. 1B , which are schematic views of an exploded structure and a combined structure of the reticle protective film assembly. The reticle protective film assembly includes a frame 1 and a wafer film 2 , wherein The frame 1 has a first bonding surface 11 and a second bonding surface 12, and one surface of the wafer film 2 and the first bonding surface 11 of the frame 1 are irradiated by an ion beam or a fast atomic beam, so that the frame 1 A surface of the wafer 2 and the first bonding surface 11 of the frame 1 are activated to form a viscous surface 21, 111, and the first bonding surface of the viscous surface 21 activated by the wafer 2 and the frame 1 is activated. The 11-phase cover is bonded, because the viscous surface 21 of the wafer 2 and the first joint 11 of the frame 1 are viscous, so that the wafer 2 and the first joint 11 of the frame 1 can be tightly bonded. , not easy to detach, to replace the traditional organic adhesive. Further, the wafer film 2 is a single crystal germanium film or a polycrystalline germanium film.

由於該晶矽薄膜2應用於EUV微影時,80%的EUV光(13.5nm波長)通過該晶矽薄膜2,因此足以取代傳統所使用的有機膜,而當要進行EUV微影時,如第2A圖及第2B圖所示,由於該框架1係為晶矽或是鋁材料或是石英玻璃所製成,因此當照射離子束或快速原子束時,將能夠活化被照射的表面,而產生一黏性表面,如圖中所示,該框架1之第二結合面12則是經由離子束或快速原子束照射活化後形成黏性表面121,並將光罩3的一表面31也進行離子束或快速原子束照射活化,使光罩受照射的表面31也形成黏性表面311,使該已黏附有晶矽薄膜2之框架1的第二結合面12可與光罩3的表面31相黏合,致使結合有晶矽薄膜2之框架1罩蓋於光罩3上。Since the wafer 2 is applied to EUV lithography, 80% of EUV light (13.5 nm wavelength) passes through the wafer 2, so it is sufficient to replace the conventional organic film, and when EUV lithography is to be performed, As shown in Fig. 2A and Fig. 2B, since the frame 1 is made of wafer or aluminum material or quartz glass, when the ion beam or the fast atomic beam is irradiated, the irradiated surface can be activated, and Producing a viscous surface, as shown in the figure, the second bonding surface 12 of the frame 1 is activated by ion beam or rapid atomic beam irradiation to form a viscous surface 121, and a surface 31 of the reticle 3 is also performed. The ion beam or the fast atom beam irradiation is activated to cause the illuminating surface 31 of the reticle to also form the viscous surface 311, so that the second bonding surface 12 of the frame 1 to which the wafer film 2 has adhered can be combined with the surface 31 of the reticle 3. The bonding is performed such that the frame 1 incorporating the wafer film 2 is covered on the reticle 3.

且為了使框架1與光罩3日後容易相分離,使光罩3可以重複被使用,所以當框架1之第二結合面12與光罩3表面在進行離子束或快速原子束照射活化的過程中,可以縮短照射活化的時間,或縮小照射活化的面積或以點狀照射活化模式,使框架1之第二結合面12與光罩3的表面31不會產生高黏性,以利日後框架1與光罩3之分離。In order to make the frame 1 and the reticle 3 easy to be separated in the future, the reticle 3 can be repeatedly used, so when the second bonding surface 12 of the frame 1 and the surface of the reticle 3 are subjected to ion beam or rapid atom beam irradiation activation. In this case, the irradiation activation time can be shortened, or the irradiation activation area can be reduced or the activation mode can be irradiated in a point manner, so that the second bonding surface 12 of the frame 1 and the surface 31 of the photomask 3 do not have high viscosity, so as to facilitate the future frame. 1 is separated from the reticle 3.

再者,請參閱第5A圖及第5B圖,該晶矽薄膜2經離子束或快速原子束活化的範圍可為全部表面(如第5A圖所示),使晶矽薄膜2的全部表面皆為黏性表面,或只活化與框架結合的部份表面(如第5B圖所示),使晶矽薄膜2只有周緣表面形成黏性表面。Furthermore, referring to FIG. 5A and FIG. 5B, the wafer film 2 can be activated by an ion beam or a fast atomic beam in a range of all surfaces (as shown in FIG. 5A), so that all surfaces of the wafer 2 are As a viscous surface, or only a part of the surface bonded to the frame (as shown in Fig. 5B), the wafer film 2 has only a peripheral surface to form a viscous surface.

本創作為了增高該光罩保護膜組件的高度,如第3A圖及第3B圖所示,能夠再包含至少一個的增高框架4,係將該框架1之第二結合面12及增高框架4之第一結合面41經由離子束或快速原子束照射活化後形成一黏性表面121、411,並將已活化之框架1的第二結合面12與增高框架4之第一結合面41相黏合,使該已黏附晶矽薄膜2之框架1則能夠再黏附於該增高框架4表面上,進而增加框架1之整體高度,而該增高框架4由於是晶矽或是鋁材料或石英玻璃所製成,因此當要將有增高框架4之光罩保護膜組件進行應用於EUV微影時,則能夠將該增高框架4之第二結合面42與光罩3的表面進行離子束或快速原子束照射活化後,使活化後的增高框架4之第二結合面42與光罩3的表面皆會形成黏性表面421、311,並將活化後的增高框架4之第二結合面42黏附於該活化後的光罩3表面上,如此將能夠使有增高框架4之光罩保護膜組件用以進行EUV微影,如第4A圖及第4B所示。In order to increase the height of the reticle protective film assembly, as shown in FIGS. 3A and 3B, at least one of the elevated frames 4 can be further included, and the second bonding surface 12 and the elevated frame 4 of the frame 1 are The first bonding surface 41 is activated by ion beam or rapid atom beam irradiation to form a viscous surface 121, 411, and the second bonding surface 12 of the activated frame 1 is bonded to the first bonding surface 41 of the elevated frame 4, The frame 1 of the adhered wafer film 2 can be reattached to the surface of the heightening frame 4, thereby increasing the overall height of the frame 1, and the heightening frame 4 is made of wafer or aluminum material or quartz glass. Therefore, when the reticle protective film module having the elevated frame 4 is to be applied to the EUV lithography, the second bonding surface 42 of the elevated frame 4 and the surface of the reticle 3 can be subjected to ion beam or fast atom beam irradiation. After activation, the second bonding surface 42 of the activated heightening frame 4 and the surface of the mask 3 form a viscous surface 421, 311, and the second bonding surface 42 of the activated heightening frame 4 is adhered to the activation. On the surface of the rear reticle 3, this will enable Increased protection mask frame 4 of the membrane module for performing EUV lithography, as shown in Figure 4A and second 4B.

而光罩保護膜組件製造方法,如第6圖所示,其步驟為: 1.        將一晶矽薄膜之其中一表面與一框架的其中一結合面進行離子束或快速原子束照射後,使該晶矽薄膜受照射的表面與框架受照射的結合面皆經活化形成一黏性表面401; 2.        之後,則將該晶矽薄膜具有黏性之表面黏附於該框架具有黏性的結合面上,使晶矽薄膜與框架緊密黏合402。The method for manufacturing the reticle protective film assembly, as shown in FIG. 6, is as follows: 1. After one of the surfaces of the wafer and one of the frames is irradiated with an ion beam or a fast atomic beam, The irradiated surface of the wafer film and the irradiated bonding surface of the frame are activated to form a viscous surface 401; 2. Thereafter, the viscous surface of the wafer film is adhered to the viscous bonding surface of the frame. Upper, the wafer film is tightly bonded to the frame 402.

上述晶矽薄膜2或框架1或光罩3或增高框架4或框架的表面31或結合面11,12,41,42皆係由離子束或快速原子束照射活化形成黏性表面21,111,121,311,411,421,而照射活化之時間為幾秒至幾分鐘、活化之溫度為室溫,其中活化時間以30秒~5分鐘為最佳,視晶矽薄膜2大小而有所不同。The surface of the wafer 2 or the frame 1 or the reticle 3 or the frame 3 or the frame or the bonding surfaces 11, 12, 41, 42 of the frame 1 or the frame 1 or the frame 3 or the frame 3 are activated by ion beam or rapid atom beam irradiation to form a viscous surface 21, 111, 121, 311, 411, 421. The activation time is from several seconds to several minutes, and the activation temperature is room temperature, wherein the activation time is preferably from 30 seconds to 5 minutes, depending on the size of the wafer 2.

本創作所提供之光罩保護膜組件,與其他習用技術相互比較時,其優點如下: 1.  習知產品係使用有機膜或有機黏劑進行光罩保護膜與框架的黏合,所以有機質會受到破壞,產生有機氣體,進而造成汙染及破壞設備。而本創作是以離子束或快速原子速進行光罩保護膜表面及框架結合面的照射活化,使活化後的光罩保護膜表面及框架結合面皆能形成黏性表面,當活化後的晶矽薄膜表面與經活化後的框架結合面進行黏合時,完全不會產生有機氣體,以解決習知產品會產生有機氣體的問題。 2. 本創作可藉由調整框架與光罩之黏合表面的活化時間或縮小活化範圍或以點狀模式進行活化,藉以控制框架與光罩之黏性表面的黏性,使框架日後可輕易與光罩分離,以達到光罩可被重複使用的目的,藉以降低製作成本。 3. 本創作可將框架製作成數個相同或不同的高低尺寸,再藉由離子束或快速原子速對框架結合面進行照射,使框架結合面經活化而產生黏性,致使數個框架結合面可相互黏合,藉以調整框架整體高度,而不用量身訂製單一框架之高度。 本創作已透過上述之實施例揭露如上,然其並非用以限定本創作,任何熟悉此一技術領域具有通常知識者,在瞭解本創作前述的技術特徵及實施例,並在不脫離本創作之精神和範圍內,當可作些許之更動與潤飾,因此本創作之專利保護範圍須視本說明書所附之請求項所界定者為準。The advantages of the reticle protective film module provided by the present invention when compared with other conventional techniques are as follows: 1. The conventional product uses an organic film or an organic adhesive to bond the reticle protective film to the frame, so the organic matter is subject to Destruction, the production of organic gases, which in turn cause pollution and damage to equipment. The creation of the reticle protective film surface and the frame bonding surface is performed by ion beam or fast atomic velocity, so that the activated reticle protective film surface and the frame bonding surface can form a viscous surface, when the activated crystal When the surface of the tantalum film is bonded to the activated frame joint surface, no organic gas is generated at all to solve the problem that the conventional product generates organic gas. 2. The creation can be activated by adjusting the activation time of the bonding surface of the frame and the reticle or reducing the activation range or in a point mode to control the adhesion of the frame to the viscous surface of the reticle, so that the frame can be easily The mask is separated to achieve the purpose that the mask can be reused, thereby reducing the manufacturing cost. 3. This creation can make the frame into several different or different heights, and then irradiate the frame joint surface by ion beam or fast atomic velocity, so that the frame joint surface is activated to produce viscous, resulting in several frame joint faces. They can be bonded to each other to adjust the overall height of the frame without customizing the height of a single frame. The present invention has been disclosed above in the above embodiments, but it is not intended to limit the present invention. Anyone skilled in the art having ordinary knowledge will understand the foregoing technical features and embodiments of the present invention without departing from the present invention. In the spirit and scope, the scope of patent protection of this creation shall be subject to the definition of the requirements attached to this manual.

1‧‧‧框架
11‧‧‧第一結合面
111‧‧‧黏性表面
12‧‧‧第二結合面
121‧‧‧黏性表面
2‧‧‧晶矽薄膜
21‧‧‧黏性表面
3‧‧‧光罩
31‧‧‧表面
311‧‧‧黏性表面
4‧‧‧增高框架
41‧‧‧第一結合面
411‧‧‧黏性表面
42‧‧‧第二結合面
421‧‧‧黏性表面
1‧‧‧Frame
11‧‧‧ first joint
111‧‧‧Adhesive surface
12‧‧‧Second junction
121‧‧‧ Viscous surface
2‧‧‧ wafer film
21‧‧‧ Viscous surface
3‧‧‧Photomask
31‧‧‧ surface
311‧‧‧ Viscous surface
4‧‧‧Higher frame
41‧‧‧ first joint
411‧‧‧ Viscous surface
42‧‧‧Second junction
421‧‧‧ Viscous surface

[第1A圖]係本創作光罩保護膜組件之分解結構示意圖。        [第1B圖]係本創作光罩保護膜組件之組合結構示意圖。        [第2A圖]係本創作光罩保護膜組件之第一實施應用分解結構示意圖。        [第2B圖]係本創作光罩保護膜組件之第一實施應用組合結構示意圖。        [第3A圖]係本創作光罩保護膜組件之第二實施應用分解結構示意圖。        [第3B圖]係本創作光罩保護膜組件之第二實施應用組合結構示意圖。 [第4A圖]係本創作光罩保護膜組件之第三實施應用分解結構示意圖。        [第4B圖]係本創作光罩保護膜組件之第三實施應用組合結構示意圖。        [第5A圖]係本創作光罩保護膜組件之晶矽薄膜全部表面活化示意圖。        [第5B圖]係本創作光罩保護膜組件之晶矽薄膜部分表面活化示意圖。        [第6圖]係本創作光罩保護膜組件之流程示意圖。[Fig. 1A] is a schematic exploded view of the protective mask protective film assembly of the present invention. [Fig. 1B] is a schematic view showing the combined structure of the reticle protective film module. [Fig. 2A] is a schematic exploded view of the first implementation application of the present reticle protective film module. [Fig. 2B] is a schematic diagram of a first implementation application combined structure of the present reticle protective film module. [Fig. 3A] is a schematic exploded view of the second implementation application of the present reticle protective film module. [Fig. 3B] is a schematic view showing a second embodiment of the application of the reticle protective film module. [Fig. 4A] is a schematic exploded view showing the third embodiment of the present invention. [Fig. 4B] is a schematic view showing a combined structure of a third implementation application of the present reticle protective film module. [Fig. 5A] is a schematic view showing the entire surface activation of the wafer film of the present photomask protective film module. [Fig. 5B] is a schematic diagram showing the surface activation of the wafer film portion of the present photomask protective film module. [Fig. 6] is a schematic flow chart of the mask protective film assembly of the present invention.

1‧‧‧框架 1‧‧‧Frame

11‧‧‧第一結合面 11‧‧‧ first joint

111‧‧‧黏性表面 111‧‧‧Adhesive surface

12‧‧‧第二結合面 12‧‧‧Second junction

2‧‧‧晶矽薄膜 2‧‧‧ wafer film

21‧‧‧黏性表面 21‧‧‧ Viscous surface

Claims (5)

一種光罩保護膜組件,包括: 一框架,係具有二個結合面,其中一結合面係為經由離子束照射而活化形成的一黏性表面;以及 一晶矽薄膜,係具有二個表面,其中一表面係為經由離子束照射而活化形成的一黏性表面;        係將晶矽薄膜經活化後的黏性表面覆蓋於框架經活化後的結合面,使該晶矽薄膜的表面與框架結合面相黏合,該晶矽薄膜緊密結合於該框架上。A reticle protective film assembly comprising: a frame having two bonding faces, wherein one bonding surface is a viscous surface activated by ion beam irradiation; and a wafer film having two surfaces One of the surfaces is a viscous surface activated by ion beam irradiation; the activated viscous surface of the wafer is coated on the activated bonding surface of the frame to bond the surface of the wafer to the frame. The face is bonded and the wafer film is tightly bonded to the frame. 如請求項1所述之光罩保護膜組件,其中該晶矽薄膜之厚度為20~100nm。The reticle protective film module of claim 1, wherein the wafer film has a thickness of 20 to 100 nm. 如請求項1所述之光罩保護膜組件,更包含一光罩,該光罩至少具有一表面,係將光罩之表面與該框架未經活化之另一結合面經由離子束照射活化成為黏性表面,使該已黏附晶矽薄膜之框架則能夠再黏附於該光罩之表面上。The reticle protective film module of claim 1, further comprising a reticle having at least one surface, wherein the surface of the reticle and the other unbonded surface of the frame are activated by ion beam irradiation The viscous surface allows the frame of the adhered wafer to adhere to the surface of the reticle. 如請求項1所述之光罩保護膜組件,更包含一增高框架,該增高框架具有二個結合面,係將增高框架之其中一結合面及框架未經活化之另一結合面經由離子束照射活化成為黏性表面,使該已黏附晶矽薄膜之框架則能夠再黏附於該增高框架已活化的結合面上。The reticle protective film module of claim 1, further comprising a height increasing frame having two bonding faces, wherein one of the bonding faces of the elevated frame and the other bonding surface of the frame that is not activated are passed through the ion beam The activation of the radiation becomes a viscous surface, so that the frame of the adhered wafer film can be reattached to the activated bonding surface of the elevated frame. 如請求項1所述之光罩保護膜組件,其中該離子束能夠以快速原子束取代。The reticle protective film assembly of claim 1, wherein the ion beam can be replaced with a fast atomic beam.
TW103214339U 2014-08-12 2014-08-12 Photomask protection film component TWM492523U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110504160A (en) * 2018-05-16 2019-11-26 梁剑波 The manufacturing method and semiconductor devices of semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110504160A (en) * 2018-05-16 2019-11-26 梁剑波 The manufacturing method and semiconductor devices of semiconductor devices

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