TW202404184A - Dual-band and dual-polarization RF package radiation structure wherein, the dual-band and dual-polarization RF package radiation structure includes a multi-layer conductive wiring substrate, multiple RF radiation structures, and high and low-frequency RF IC chips - Google Patents

Abstract

The present invention discloses a dual-band and dual-polarization radio frequency (RF) package radiation structure, which includes a multi-layer conductive wiring substrate, multiple dual-band and dual-polarization RF radiation structures, multiple high-frequency transmitting RF integrated circuit (IC) chips, and multiple low-frequency receiving RF IC chips. The multi-layer conductive wiring substrate comprises multiple dielectric layers, conductive traces, a first group of conductive vias, and a second group of conductive vias. The dual-band and dual-polarization RF radiation structures are set on the bottom surface of the multi-layer conductive wiring substrate and embedded within the multi-layer conductive wiring substrate, while the chips are set on the top surface of the multi-layer conductive wiring substrate. The high-frequency transmitting RF IC chips are electrically connected to the first group of conductive vias, thereby separately electrically connected to the dual-band and dual-polarization RF radiation structures. The low-frequency receiving RF IC chips are electrically connected to the second group of conductive vias, thereby separately electrically connected to the dual-band and dual-polarization RF radiation structures.

Description

Dual-band and dual-polarized RF package radiation structure

The present invention relates to a packaging structure, and in particular to a dual-frequency and dual-polarization radio frequency packaging radiation structure.

Low/medium/high orbit satellite ground terminals, 5G frequency range (FR2) millimeter wave base stations, radar and long-distance communications, point-to-point microwave links and communication system fronthaul networks and other industrial applications, with long-distance and different azimuth coverage Features, active array antennas are constructed to achieve the dual functions of high gain and smart beam scanning operation. In view of the communication needs and the planning of industrial frequency bands, the need to co-construct dual-band and dual-polarized antenna characteristics is an important feature.

Traditional antenna architecture uses two sets of separate array antennas to implement dual-band antennas, or combines a single antenna architecture but shares the same polarization port. In the implementation of the array antenna, if a single antenna group is used, a dual-band antenna unit needs to be designed. The dual-band operation shares a single input and output port. In view of the broadband requirements, the antenna characteristics will be reduced, and the single antenna unit structure will Creating a dual-band structure cannot create different feed ports to separate the dual-band separate RF module feeds. When using dual-band antenna units, it is necessary to use a set of duplexers or connect RF circulators, but this will increase system complexity, loss and cost. Distance is also more difficult. However, if two separate sets of array antennas are used to feed two frequency bands, such as low-orbit satellites using dual frequency bands for uplink and downlink data transmission, two sets of antennas need to be constructed when constructing the array antenna, resulting in a larger volume and area.

Therefore, the present invention aims to solve the above problems by proposing a dual-band and dual-polarization radio frequency package radiation structure, especially for the application of active array antennas, to solve the problems caused by the conventional technology.

The present invention provides a dual-band and dual-polarization radio frequency package radiation structure, which constructs multiple input and output ports. Different frequency bands and different polarization directions correspond to different input and output ports. Different input and output ports are respectively connected to different antenna metal patches. , to operate independently and reduce dependence on duplexers and circulators, and through the existence of antenna patches in different frequency bands to create isolation, it can increase the isolation between adjacent antenna radio frequency units in the same frequency band. In addition, the metal patches of the transmitting antenna and the metal patches of the receiving antenna in different frequency bands are arranged in a staggered manner, and are physically isolated to improve isolation and reduce the occurrence of cross-polarization.

In one embodiment of the present invention, a dual-band and dual-polarized radio frequency package radiation structure includes a multi-layer conductive wiring substrate, a plurality of dual-band and dual-polarized radio frequency radiation structures, and a plurality of high-frequency transmitting radio frequency integrated circuit chips. with multiple low frequency receiving radio frequency integrated circuit chips. The multilayer conductive wiring substrate includes a multilayer dielectric layer, conductive traces, a first group of conductive vias and a second group of conductive vias, wherein the conductive traces are electrically connected to the first group of conductive vias and the second group of conductive vias. All dual-band and dual-polarized RF radiating structures are located at The bottom surface of the multi-layer conductive wiring substrate is embedded in the multi-layer conductive wiring substrate. Each high-frequency transmitting radio frequency integrated circuit chip and each low-frequency receiving radio frequency integrated circuit chip are disposed on the top surface of the multi-layer conductive wiring substrate. Each high-frequency emitting radio frequency integrated circuit chip is electrically connected to the first group of conductive vias through the first conductive structure, thereby electrically connecting all dual-band and dual-polarized radio frequency radiation structures respectively. All low-frequency receiving radio frequency integrated circuit chips are electrically connected to the second group of conductive via holes through the second conductive structure, thereby electrically connecting all dual-band and dual-polarized radio frequency radiation structures respectively.

In an embodiment of the present invention, each dual-band and dual-polarized radio frequency radiation structure includes a first antenna patch layer and a second antenna patch layer. The first antenna patch layer is disposed on the bottom surface of the multi-layer conductive wiring substrate. The second antenna patch layer is embedded between the two dielectric layers closest to the bottom surface of the multi-layer conductive wiring substrate and is electrically connected to the first group of conductive vias and the second group of conductive vias.

In one embodiment of the present invention, the first antenna patch layer includes four first transmitting antenna metal patches and four first receiving antenna metal patches, and the second antenna patch layer includes four second The transmitting antenna metal patch and the four second receiving antenna metal patches. All first transmitting antenna metals are located directly below all second transmitting antenna metal patches, and all first receiving antenna metal patches are located directly below all second receiving antenna metal patches. All the second transmitting antenna metal patches are electrically connected to the corresponding first conductive structure and the high-frequency transmitting radio frequency integrated circuit chip through the first group of conductive via holes, and all the second receiving antenna metal patches pass through the second group of conductive through holes. electrically connected to its corresponding second conductive structure and low-frequency connection Radio frequency integrated circuit chip.

In one embodiment of the present invention, all first transmitting antenna metal patches of all dual-band and dual-polarization radio frequency radiation structures are arranged in a periodic first square matrix, and all first transmitting antenna metal patches of all dual-band and dual-polarization radio frequency radiation structures are arranged in a periodic first square matrix. A receiving antenna metal patch is arranged in a periodic second square array. The rows of the first square array are alternately arranged with the rows of the second square array, and the columns of the first square array are alternately arranged with the columns of the second square array.

In one embodiment of the present invention, all first transmitting antenna metal patches, all first receiving antenna metal patches, all second transmitting antenna metal patches and all second receiving antenna metal patches are rectangular structures.

In one embodiment of the invention, a transmit signal input port and a receive signal output port are provided on the top surface of the multi-layer conductive wiring substrate. The transmitting signal input port is electrically connected to all high-frequency transmitting radio frequency integrated circuit chips through conductive traces and the first conductive structure, and the receiving signal output port is electrically connected to all low-frequency receiving radio frequency integrated circuit chips through conductive traces and the second conductive structure. circuit chip.

In one embodiment of the invention, the transmit signal input port and the receive signal output port are Sub-Miniature Push-on Micro (SMPM) ports.

In one embodiment of the invention, a first power connection port and a second power connection port are provided on the top surface of the multi-layer conductive wiring substrate. The first power connection port is electrically connected to all high-frequency transmitting radio frequency integrated circuit chips through the first group of conductive vias and the first conductive structure, and the second power connection port is All low-frequency receiving radio frequency integrated circuit chips are electrically connected through the second group of conductive via holes and the second conductive structure.

In one embodiment of the present invention, the first power connection port and the second power connection port are serial peripheral interfaces (Serial Peripheral Interface Bus, SPI).

In one embodiment of the invention, the first conductive structure and the second conductive structure are conductive solder balls.

Based on the above, the dual-band and dual-polarization RF package radiation structure uses a multi-layer conductive wiring substrate to construct multiple input and output ports. Different frequency bands and different polarization directions correspond to different input and output ports, and different input and output ports are connected to different antenna patches. array to operate independently and reduce dependence on duplexers and circulators. In addition, the metal patches of the transmitting antenna and the metal patches of the receiving antenna are arranged in a staggered manner, and are physically isolated to improve isolation and reduce the occurrence of cross-polarization.

In order to enable you, the review committee, to have a better understanding of the structural features and effects achieved by the present invention, we would like to provide you with a diagram of the preferred embodiment and a detailed description, as follows:

1: Dual-band and dual-polarized RF package radiation structure

10:Multilayer conductive wiring substrate

100:Dielectric layer

101: Conductive traces

102: The first group of conductive vias

103: The second group of conductive vias

104:Power divider

11:Dual-band and dual-polarized RF radiation structure

110: First antenna metal patch layer

1100: The first transmitting antenna metal patch

1101: First receiving antenna metal patch

111: Second antenna metal patch layer

1110: Second transmitting antenna metal patch

1111: Second receiving antenna metal patch

12: High frequency transmitting radio frequency integrated circuit chip

13: Low frequency receiving radio frequency integrated circuit chip

14: First conductive structure

15: Second conductive structure

16: Transmit signal input port

17: Receive signal output port

18:First power port

19: Second power port

2:Mother circuit board

200:Dielectric board

201:IF input port

202:First power divider

203: Upconverter

204: Second power divider

205:Third power divider

206:Downconverter

207: The fourth power divider

208:IF output port

209: First signal port

210: Second signal port

211:First power supply port

212: Second power supply port

H: Horizontally polarized signal

V: vertical polarization signal

IM: Input intermediate frequency signal

H1: The first high frequency signal

R1: first radio frequency signal

R2: The second radio frequency signal

H2: The second high frequency signal

OM: Output intermediate frequency signal

M1: The first intermediate frequency signal

U: Upconverted signal

TH: Sum of high frequency signals

M2: The second intermediate frequency signal

Figure 1 is a partial structural cross-sectional view of a radiation structure of a dual-band and dual-polarized radio frequency package according to an embodiment of the present invention.

Figure 2 is a top view of the radiation structure of a dual-band and dual-polarized radio frequency package according to an embodiment of the present invention.

Figure 3 shows a dual-band and dual-polarized radio frequency package according to an embodiment of the present invention. Bottom view of the radiating structure.

Figure 4 is a top view of a mother circuit board according to an embodiment of the present invention.

Figures 5 and 6 are circuit block diagrams corresponding to the radiation structure of a dual-band and dual-polarized radio frequency package according to an embodiment of the present invention.

Figures 7 and 8 are circuit block diagrams corresponding to the mother circuit board according to an embodiment of the present invention.

The embodiments of the present invention will be further explained below with reference to relevant drawings. Wherever possible, the same reference numbers are used in the drawings and description to refer to the same or similar components. In the drawings, shapes and thicknesses may be exaggerated for simplicity and ease of notation. It should be understood that components not specifically shown in the drawings or described in the specification are in forms known to those of ordinary skill in the art. Those skilled in the art can make various changes and modifications based on the contents of the present invention.

When an element is referred to as being "on", it can generally mean that the element is directly on the other element, or that the other element exists between them. Conversely, when an element is said to be "directly on" another element, it cannot have other elements between them. As used herein, the term "and/or" includes any combination of one or more of the associated listed items.

The following description of "one embodiment" or "an embodiment" refers to all associated specific elements of at least one embodiment. parts, structures or characteristics. Therefore, “one embodiment” or multiple descriptions of “an embodiment” appearing in multiple places below are not directed to the same embodiment. Furthermore, specific components, structures and features in one or more embodiments may be combined in an appropriate manner.

The disclosure is specifically described with the following examples. These examples are only for illustration, because for those who are familiar with this art, various modifications and modifications can be made without departing from the spirit and scope of the disclosure. Therefore, this disclosure The scope of protection of the disclosed content shall be determined by the scope of the patent application attached. Throughout the specification and claims, unless the content clearly dictates otherwise, the meaning of "a" and "the" includes such statements including "one or at least one" of the element or component. Furthermore, as used in this disclosure, the singular article also includes recitations of plural elements or ingredients unless it is obvious from the particular context that the plural is excluded. Furthermore, as applied to this description and all claims below, "in" may mean "in" and "on" unless the context clearly dictates otherwise. Unless otherwise noted, the terms used throughout the specification and patent claims generally have their ordinary meanings as used in the field, in the disclosure and in the particular context. Certain terms used to describe the disclosure are discussed below or elsewhere in this specification to provide practitioners with additional guidance in describing the disclosure. The use of examples anywhere throughout this specification, including the use of examples of any terminology discussed herein, is for illustrative purposes only and does not, of course, limit the scope and meaning of the disclosure or any exemplified terminology. Likewise, the present disclosure is not limited to this specification various embodiments proposed in .

In addition, if the term "electrical (sexual) coupling" or "electrical (sexual) connection" is used here, it includes any direct and indirect electrical connection means. For example, if a first device is described as being electrically coupled to a second device, it means that the first device can be directly connected to the second device, or indirectly connected to the second device through other devices or connections. device. In addition, if the description is about the transmission and provision of electrical signals, those familiar with this art should be able to understand that the transmission process of electrical signals may be accompanied by attenuation or other non-ideal changes, but if the source and receiving end of the transmission or provision of electrical signals are not special Description, essentially should be regarded as the same signal. For example, if an electrical signal S is transmitted (or provided) from terminal A of an electronic circuit to terminal B of an electronic circuit, it may pass through the source and drain ends of a transistor switch and/or possible stray capacitance. A voltage drop is generated, but if the purpose of this design is not to deliberately use the attenuation or other non-ideal changes produced during transmission (or provision) to achieve certain technical effects, the electrical signal S is at the endpoint A and endpoint of the electronic circuit. B should be regarded as essentially the same signal.

Unless otherwise specified, some conditional sentences or words, such as "can", "could", "might", or "may", usually try to express that the embodiment of this case has, But it can also be interpreted as features, components, or steps that may not be needed. In other embodiments, these features, elements, or steps may not be required.

The words "comprising," "including," "having," "containing," and "involving" as used herein may be understood. Etc., are open-ended, which means including but not limited to. In addition, any embodiment or patentable scope of the present invention does not necessarily achieve all the purposes, advantages or features disclosed in the present invention. In addition, the abstract part and title are only used to assist in searching for patent documents and are not used to limit the scope of the patent application for the invention.

The following will provide a dual-band and dual-polarization RF package radiation structure, which uses a multi-layer conductive wiring substrate to construct multiple input and output ports. Different frequency bands and different polarization directions correspond to different input and output ports, and different input and output ports are connected to different The antenna metal patch allows for independent operation and reduces dependence on duplexers and circulators. In addition, the metal patches of the transmitting antenna and the metal patches of the receiving antenna are arranged in a staggered manner, and physical isolation is used to improve isolation to reduce the occurrence of cross-polarization. The dual-band and dual-polarized radio frequency package radiation structure can meet the dual-band requirements for the frequency range (FR2) of low-orbit satellites above, downlink and 5G. It can construct bilinear or dual circular polarization according to various application requirements. The radiation requirements meet the antenna characteristics required for high gain and smart scanning when constructing array antennas.

Figure 1 is a structural cross-sectional view of a part of the radiation structure of a dual-band and dual-polarization radio frequency package according to one embodiment of the present invention. Figure 2 is a top view of the radiation structure of a dual-band and dual-polarization radio frequency package according to one embodiment of the present invention. Figure 3 is a bottom view of the radiation structure of a dual-band and dual-polarized radio frequency package according to an embodiment of the present invention. Referring to Figure 1, Figure 2 and Figure 3, one embodiment of the dual-band and dual-polarized radio frequency package radiation structure 1 of the present invention is introduced below. The dual-band and dual-polarization radio frequency package radiation structure 1 includes a multi-layer conductive wiring substrate 10, a plurality of dual-band and dual-polarization radio frequency radiation structures 11, and a plurality of A high-frequency transmitting radio frequency integrated circuit chip 12, a plurality of low-frequency receiving radio frequency integrated circuit chips 13, a first conductive structure 14 and a second conductive structure 15. The first conductive structure 14 and the second conductive structure 15 may be, but are not limited to, conductive solder balls. The multilayer conductive wiring substrate 10 includes a multilayer dielectric layer 100, conductive traces 101, a first group of conductive vias 102 and a second group of conductive vias 103, wherein the conductive traces 101 electrically connect the first group of conductive vias 102 and the second group of conductive vias 103. Two groups of conductive vias 103. All dual-band and dual-polarization radio frequency radiation structures 11 are provided on the bottom surface of the multi-layer conductive wiring substrate 10 and embedded in the multi-layer conductive wiring substrate 10 . All high-frequency transmitting RF integrated circuit chips 12 and all low-frequency receiving RF integrated circuit chips 13 are disposed on the top surface of the multi-layer conductive wiring substrate 10 , wherein all high-frequency transmitting RF integrated circuit chips 12 are electrically connected through the first conductive structure 14 Connect the first group of conductive vias 102 to electrically connect all dual-band and dual-polarization RF radiation structures 11 respectively, and all low-frequency receiving RF integrated circuit chips 13 are electrically connected to the second group of conductive vias 15 through the second conductive structure 15 Through holes 103 are used to electrically connect all dual-band and dual-polarized radio frequency radiation structures 11 respectively.

In some embodiments of the present invention, each dual-band and dual-polarized radio frequency radiation structure 11 may include a first antenna patch layer 110 and a second antenna patch layer 111. The first antenna patch layer 110 is disposed on the bottom surface of the multi-layer conductive wiring substrate 10, and the second antenna patch layer 111 is embedded between the two dielectric layers 100 closest to the bottom surface of the multi-layer conductive wiring substrate 10, and is electrically connected to the bottom surface of the multi-layer conductive wiring substrate 10. The first group of conductive vias 102 and the second group of conductive vias 103 are connected.

Specifically, the first antenna patch layer 110 may include four first transmitting antenna metal patches 1100 and four first receiving antenna metal patches. Piece 1101, the second antenna patch layer 111 may include four second transmitting antenna metal patches 1110 and four second receiving antenna metal patches 1111. All the first transmitting antenna metal patches 1100 , all the first receiving antenna metal patches 1101 , all the second transmitting antenna metal patches 1110 and all the second receiving antenna metal patches 1111 can be, but are not limited to, rectangular, or none. The shape of the gap. All first transmitting antenna metal patches 1100 are located directly below all second transmitting antenna metal patches 1110, and all first receiving antenna metal patches 1101 are located directly below all second receiving antenna metal patches 1111. All the second transmitting antenna metal patches 1110 are electrically connected to the corresponding first conductive structure 14 and the high-frequency transmitting radio frequency integrated circuit chip 12 through the first group of conductive vias 102, and all the second receiving antenna metal patches 1111 pass through the first group of conductive vias 102. The two groups of conductive vias 15 are electrically connected to their corresponding second conductive structures 15 and the low-frequency receiving radio frequency integrated circuit chip 13 . For example, the first group of conductive vias 102 corresponding to a high-frequency emitting radio frequency integrated circuit chip 12 can be divided into four groups, and each group of the first group of conductive vias 102 includes transmitting high-frequency levels respectively. Two sets of through holes for the polarization signal H and the high-frequency vertical polarization signal V. Each group of the first group of conductive vias 102 is electrically connected to the same second transmitting antenna metal patch 1110 . The second group of conductive vias 103 corresponding to a low-frequency receiving radio frequency integrated circuit chip 13 can be divided into four groups. Each group of the second group of conductive vias 103 includes transmitting the low-frequency horizontal polarization signal H and the low-frequency signal respectively. Two sets of through holes for the vertically polarized signal V. Each group of the second group of conductive vias 103 is electrically connected to the same second receiving antenna metal patch 1111 . Each group of sub-vias is regarded as an independent input and output port, which can operate independently to reduce frequency isolation. Interference and dependence on duplexers and circulators.

All first transmitting antenna metal patches 1100 of all dual-band and dual-polarized radio frequency radiation structures 11 are arranged in a periodic first square matrix, and all first receiving antenna metal patches 1101 of all dual-band and dual-polarized radio frequency radiation structures 11 The arrangement is a periodic second square matrix, with multiple rows of the first square matrix alternately arranged with multiple rows of the second square matrix, and multiple columns of the first square matrix alternately arranged with multiple columns of the second square matrix. Therefore, the first square array and the second square array are arranged in a staggered manner, and physical isolation is used to improve the isolation to reduce the occurrence of cross-polarization.

A transmitting signal input port 16 and a receiving signal output port 17 may be provided on the top surface of the multilayer conductive wiring substrate 10 . The transmit signal input port 16 and the receive signal output port 17 may be, but are not limited to, sub-miniature push-on micro (Sub-Miniature Push-on Micro; SMPM) ports. The transmitting signal input connection port 16 is electrically connected to all high-frequency transmitting radio frequency integrated circuit chips 12 through conductive traces 101 and the first conductive structure 14 . The receiving signal output connection port 17 is electrically connected to all low-frequency receiving radio frequency integrated circuit chips 13 through the conductive traces 101 and the second conductive structure 15 . The top surface of the multi-layer conductive wiring substrate 10 may further be provided with a first power connection port 18 and a second power connection port 19 . The first power connection port 18 and the second power connection port 19 may be, but are not limited to, serial peripheral interface (Serial Peripheral Interface Bus, SPI) or control signal lines. The first power connection port 18 is electrically connected to all high-frequency transmitting radio frequency integrated circuit chips 12 through the first group of conductive vias 102 and the first conductive structure 14, and the second power connection port 19 is connected to the second group of conductive vias 103 through the second group of conductive vias 103. two The conductive structure 15 is electrically connected to all low-frequency receiving radio frequency integrated circuit chips 13 .

The following will provide an array radio frequency system, which horizontally stacks multiple dual-band and dual-polarization radio frequency package radiating structures on a mother circuit board to simplify system complexity and reduce manufacturing costs, and increase the stability and stability of antenna characteristics. The application expansion of the product is similar to that of mainstream cars using a common chassis. This array-type radio frequency system has a reconfigurable architecture to produce different radio frequency powers corresponding to different application scenarios. When there is an abnormal problem in the array RF system, part of the dual-band and dual-polarized RF package radiation structure can be replaced to quickly detect the fault and avoid the damage caused by the failure of one module, which will cause the failure of the entire RF system, to reduce the risk of Maintenance costs. The radiation structure of the dual-band and dual-polarized radio frequency package is a module composed of radio frequency and antenna. The mother circuit board is mainly composed of system functions such as signal transmission, power supply, and the rise and fall of radio frequency signals. Therefore, the design of dual-band and dual-polarized RF package radiation structures emphasizes modularization, mass production convenience, and maintenance and replacement of RF and antenna co-constructed modules. The mother circuit board emphasizes the scalability of the system, including the size of the array antenna, the expansion of the operating voltage, the series and parallel connection of signal transmission, and the implementation of the heat dissipation mechanism. This array-type RF system uses a common interface to improve system commonality. The dual-band and dual-polarized RF package radiating structure and the interface integrated with the mother circuit board form an air channel to conduct heat dissipation, thereby reducing the system impact of thermal energy and taking into account both mechanical and Electronic properties.

Figure 4 is a top view of a mother circuit board according to an embodiment of the present invention. Referring to Figure 4 and Figure 2, one embodiment of the array radio frequency system is introduced below. The array RF system consists of a mother circuit board 2 and multiple dual Frequency and dual polarization RF package radiation structure 1. All dual-band and dual-polarized RF package radiating structures 1 are horizontally stacked on the mother circuit board 2 and arranged in an array, and are electrically connected to the mother circuit board 2 . All dual-band and dual-polarized RF package radiating structures are divided into multiple RF groups. Taking Figure 4 as an example, all dual-band and dual-polarization RF package radiating structures 1 are arranged in a 4×4 array. Each RF group includes four dual-band and dual-polarization RF package radiating structures in each row of the array. 1.

Figures 5 and 6 are circuit block diagrams corresponding to the radiation structure of a dual-band and dual-polarized radio frequency package according to one embodiment of the present invention. Figures 7 and 8 are the mother circuit board of one embodiment of the present invention. Corresponding circuit block diagram. Please refer to Figure 2, Figure 4, Figure 5, Figure 6, Figure 7 and Figure 8. In operation, the mother circuit board 2 receives an input intermediate frequency signal IM and upconverts the input intermediate frequency signal IM to thereby generate a plurality of first high frequency signals H1. The multi-layer conductive wiring substrate 10 of each dual-band and dual-polarized RF package radiating structure 1 is provided with a power divider 104. The power divider 104 is used to distribute or sum the power of high-frequency signals. All radio frequency groups of all dual-band and dual-polarized radio frequency package radiating structures 1 respectively receive all first high frequency signals H1 and transmit a plurality of first radio frequency signals R1 accordingly. All radio frequency groups of all dual-band and dual-polarized radio frequency package radiating structures 1 receive a plurality of second radio frequency signals R2, thereby respectively generating a plurality of second high frequency signals H2 corresponding to all radio frequency groups, and the mother circuit board 2 pairs All the second high frequency signals H2 are down-converted to generate an output intermediate frequency signal OM.

In some embodiments of the present invention, the mother circuit board 2 may include a dielectric board 200, an intermediate frequency input port 201, and a first power divider. 202. Multiple upconverters 203, multiple second power dividers 204, multiple third power dividers 205, multiple downconverters 206, a fourth power divider 207, an intermediate frequency output port 208, and multiple A first signal connection port 209, a plurality of second signal connection ports 210, a plurality of first power supply ports 211 and a plurality of second power supply ports 212. All the first signal ports 209 and all the second signal ports 210 may be, but are not limited to, Sub-Miniature Push-on Micro (SMPM) ports. All the first power supply ports 211 and all the second power supply ports 212 may be, but are not limited to, Serial Peripheral Interface Bus (SPI). The IF input port 201 and the IF output port 208 may be, but are not limited to, Sub-Miniature-A (SMA) connection ports.

The dielectric board 200 is provided with all dual-band and dual-polarization RF package radiation structures 1, intermediate frequency input port 201, first power divider 202, all upconverters 203, all second power dividers 204, and all third The power divider 205, all downconverters 206, the fourth power divider 207, the intermediate frequency output port 208, all the first signal ports 209, all the second signal ports 210, all the first power supply ports 211 and all the second Power supply port 212. The first power divider 202 is electrically connected to the intermediate frequency input port 201, all upconverters 203 are electrically connected to a plurality of output terminals of the first power divider 202, and all second power dividers 204 are electrically connected to all upconverters. The device 203 and all radio frequency groups of all dual-band and dual-polarized radio frequency package radiating structures 1. All third power dividers 205 are electrically connected to all radio frequency groups of all dual-band and dual-polarization radio frequency package radiation structures, and all downconverters 206 are electrically connected to all third power dividers 205 respectively. The fourth power The divider 207 is electrically connected to all downconverters 206, and the intermediate frequency output port 208 is electrically connected to the fourth power divider 207.

The first power divider 202 receives the input intermediate frequency signal IM through the intermediate frequency input port 201, and distributes the power of the input intermediate frequency signal IM according to the number of all output terminals of the first power divider 202, so that the first power divider 202 All output terminals generate a plurality of first intermediate frequency signals M1. All upconverters 203 receive all first intermediate frequency signals M1 and upconvert them to generate a plurality of upconverted signals U. Each second power divider 204 receives its corresponding upconverted signal U and distributes the corresponding upconverted signal U according to the number of output terminals of the second power divider 204 to generate the first high frequency signal H1.

Each third power divider 205 receives its corresponding second high-frequency signal H2 and sums the power of the corresponding second high-frequency signal H2 to generate a summed high-frequency signal TH. All downconverters 206 receive their corresponding summed high-frequency signals TH and downconvert them to generate a plurality of second intermediate frequency signals M2. The fourth power divider 207 receives all the second intermediate frequency signals M2 and sums the power of all the second intermediate frequency signals M2 to generate an output intermediate frequency signal OM. The intermediate frequency output port 208 is used to output the output intermediate frequency signal OM.

All the first signal ports 209 are divided into a plurality of first groups, and all the first groups are electrically connected to all the second power dividers 204 respectively, and are electrically connected to the transmission signal input ports 16 of all radio frequency groups, respectively. Each first group is electrically connected between its corresponding second power divider 204 and the transmit signal input port 16 of the radio frequency group. all The second signal connection port 210 is divided into a plurality of second groups. All second groups are electrically connected to all third power dividers 205 and are electrically connected to the receiving signal output connection ports 17 of all radio frequency groups. Each A second group is electrically connected between its corresponding third power divider 205 and the receiving signal output connection port 17 of the radio frequency group. In addition, all the first power supply ports 211 are electrically connected to the first power connection ports 18 of all dual-band and dual-polarized radio frequency package radiating structures 1, and all the second power supply ports 212 are electrically connected to all the dual-band and dual-polarized radio frequencies. The second power connection port 19 of the radiating structure 1 is packaged.

Since multiple dual-band and dual-polarization radio frequency package radiating structures 1 are stacked horizontally on the mother circuit board 2, system complexity can be simplified and manufacturing costs can be reduced, and the stability of antenna characteristics and product application expansion can be increased. This array-type radio frequency system has a reconfigurable architecture to produce different radio frequency powers corresponding to different application scenarios. When there is an abnormal problem in the array RF system, part of the dual-band and dual-polarized RF package radiation structure 1 can be replaced to quickly detect the fault and avoid the damage caused by the failure of one module, which will cause the failure of the entire RF system. Reduce maintenance costs. The integrated interface between the dual-band and dual-polarized RF package radiating structure 1 and the mother circuit board 2 forms an air channel to conduct heat and dissipate, so as to reduce the system impact of thermal energy and take into account both mechanical and electronic characteristics.

Please see Figure 1, Figure 5 and Figure 6. The power divider 104 and the high-frequency transmitting RF integrated circuit chip 12 of the multi-layer conductive wiring substrate 10 receive the first high-frequency signal H1, and accordingly transmit the first RF signal R1 through the dual-band and dual-polarized RF radiation structure 11. Multilayer conductive wiring substrate The power divider 104 of 10 and the low-frequency receiving radio frequency integrated circuit chip 13 receive the second radio frequency signal R2 through the dual-band and dual-polarized radio frequency radiation structure 11, and thereby generate the second high-frequency signal H2. The first transmitting antenna metal patch 1100 and the second transmitting antenna metal patch 1110 are used to transmit the first radio frequency signal R1, and the first receiving and transmitting antenna metal patch 1101 and the second receiving antenna metal patch 1111 are used to receive the second radio frequency. Signal R2.

According to the above embodiments, the dual-band and dual-polarization radio frequency package radiation structure uses a multi-layer conductive wiring substrate to construct multiple input and output ports. Different frequency bands and different polarization directions correspond to different input and output ports, and different input and output ports are connected to different antennas. metal patches to operate independently and reduce dependence on duplexers and circulators. In addition, the transmitting antenna patches and receiving antenna patches are arranged in a staggered manner, and are physically isolated to improve isolation and reduce the occurrence of cross-polarization.

The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, all equal changes and modifications can be made in accordance with the shape, structure, characteristics and spirit described in the patent scope of the present invention. , should be included in the patent scope of the present invention.

10:Multilayer conductive wiring substrate

100:Dielectric layer

101: Conductive traces

102: The first group of conductive vias

103: The second group of conductive vias

11:Dual-band and dual-polarized RF radiation structure

110: First antenna metal patch layer

1100: The first transmitting antenna metal patch

1101: First receiving antenna metal patch

111: Second antenna metal patch layer

1110: Second transmitting antenna metal patch

1111: Second receiving antenna metal patch

12: High frequency transmitting radio frequency integrated circuit chip

13: Low frequency receiving radio frequency integrated circuit chip

14: First conductive structure

15: Second conductive structure

18:First power port

19: Second power port

Claims (9)

A dual-band and dual-polarized radio frequency package radiation structure, including: A multilayer conductive wiring substrate includes a multilayer dielectric layer, conductive traces, a first group of conductive vias and a second group of conductive vias, wherein the conductive traces electrically connect the first group of conductive vias and the second group of conductive vias. Group conductive vias; A plurality of dual-band and dual-polarization radio frequency radiation structures are provided on the bottom surface of the multi-layer conductive wiring substrate and embedded in the multi-layer conductive wiring substrate; and A plurality of high-frequency transmitting radio frequency integrated circuit chips and a plurality of low-frequency receiving radio frequency integrated circuit chips are disposed on the top surface of the multi-layer conductive wiring substrate, wherein the high-frequency transmitting radio frequency integrated circuit chips are electrically connected through the first conductive structure Connect the first group of conductive vias to electrically connect the dual-band and dual-polarized radio frequency radiation structures respectively, and the low-frequency receiving radio frequency integrated circuit chips are electrically connected to the second group of conductive vias through the second conductive structure. Through holes are used to electrically connect the dual-band and dual-polarization radio frequency radiation structures respectively. The dual-band and dual-polarization radio frequency package radiation structure as described in claim 1, wherein each of the dual-band and dual-polarization radio frequency radiation structure includes: A first antenna metal patch layer is provided on the bottom surface of the multi-layer conductive wiring substrate; and A second antenna metal patch layer is embedded between the two dielectric layers closest to the bottom surface of the multi-layer conductive wiring substrate and electrically connects the first group of conductive vias and the second group of conductive vias. hole. The dual-band and dual-polarization radio frequency package radiation structure as described in claim 2, wherein the first antenna metal patch layer includes four first transmitting antenna metal patches and four first receiving antenna metal patches, the The second antenna metal patch layer includes four second transmitting antenna metal patches and four second receiving antenna metal patches. The first transmitting antenna patches are respectively located directly below the second transmitting antenna patches. , the first receiving antenna patches are respectively located directly below the second receiving antenna patches, and the second transmitting antenna patches are electrically connected to their corresponding first conductive structures through the first group of conductive via holes. And the high-frequency transmitting radio frequency integrated circuit chip, the second receiving antenna patches are electrically connected to the corresponding second conductive structure and the low-frequency receiving radio frequency integrated circuit chip through the second group of conductive via holes. The dual-band and dual-polarization radio frequency package radiation structure as described in claim 3, wherein the first transmitting antenna metal patches of the dual-band and dual-polarization radio frequency radiation structures are arranged in a first square matrix, and the dual-band and dual-polarization radio frequency radiation structures are arranged in a first square matrix. The metal patches of the first receiving antenna, which is also a dual-polarized radio frequency radiation structure, are arranged in a second square array. The rows of the first square array are alternately arranged with the rows of the second square array. The columns of the first square array are arranged alternately with the rows of the second square array. The alternate design of multiple columns of the second square matrix Set. The dual-band and dual-polarization radio frequency package radiation structure as described in claim 3, wherein the first transmitting antenna metal patches, the first receiving antenna metal patches, the second transmitting antenna metal patches and the The metal patches of the second receiving antenna are all rectangular. The dual-band and dual-polarized radio frequency package radiation structure as described in claim 1, wherein the top surface of the multi-layer conductive wiring substrate is provided with a transmit signal input port and a receive signal output port, and the transmit signal input port passes through The conductive traces and the first conductive structure are electrically connected to the high-frequency transmitting radio frequency integrated circuit chips, and the receiving signal output connection port is electrically connected to the low-frequency receiving radio frequency integrated circuit chips through the conductive traces and the second conductive structure. body circuit chip. The dual-band and dual-polarized radio frequency package radiation structure as described in claim 6, wherein the transmit signal input port and the receive signal output port are sub-miniature push-on Micro (SMPM) connections. port. The dual-band and dual-polarized radio frequency package radiation structure as claimed in claim 1, wherein the top surface of the multi-layer conductive wiring substrate is provided with a first power connection port and a second power connection port, and the first power connection port passes through The first group of conductive vias and the first conductive structure are electrically connected to the high-frequency transmitting radio frequency integrated circuits. The second power connection port is electrically connected to the low-frequency receiving radio frequency integrated circuit chips through the second group of conductive vias and the second conductive structure. The dual-band and dual-polarization radio frequency package radiation structure as claimed in claim 8, wherein the first power connection port and the second power connection port are serial peripheral interfaces (Serial Peripheral Interface Bus, SPI).

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