TWM634538U - RF radiation package structure - Google Patents
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Abstract
本創作係揭露一種射頻輻射封裝結構,其包含一多層導電佈線基板、多個雙頻兼雙極化射頻輻射結構、多個高頻發射射頻積體電路晶片與多個低頻接收射頻積體電路晶片。多層導電佈線基板包含多層介電層、導電跡線、第一群導電通孔與第二群導電通孔。雙頻兼雙極化射頻輻射結構設於多層導電佈線基板之底面,並嵌於多層導電佈線基板中,晶片設於多層導電佈線基板之頂面。高頻發射射頻積體電路晶片電性連接第一群導電通孔,以藉此分別電性連接雙頻兼雙極化射頻輻射結構。低頻接收射頻積體電路晶片電性連接第二群導電通孔,以藉此分別電性連接雙頻兼雙極化射頻輻射結構。 This work discloses a radio frequency radiation packaging structure, which includes a multi-layer conductive wiring substrate, multiple dual-frequency and dual-polarization radio frequency radiation structures, multiple high-frequency transmitting radio frequency integrated circuit chips and multiple low-frequency receiving radio frequency integrated circuits wafer. The multilayer conductive wiring substrate includes multiple dielectric layers, conductive traces, a first group of conductive vias and a second group of conductive vias. The dual-frequency and dual-polarization radio frequency radiation structure is arranged on the bottom surface of the multilayer conductive wiring substrate and embedded in the multilayer conductive wiring substrate, and the chip is arranged on the top surface of the multilayer conductive wiring substrate. The high-frequency transmitting radio frequency integrated circuit chip is electrically connected to the first group of conductive vias, so as to electrically connect the dual-band and dual-polarization radio frequency radiation structures respectively. The low frequency receiving radio frequency integrated circuit chip is electrically connected to the second group of conductive vias, so as to be electrically connected to the dual frequency and dual polarization radio frequency radiation structure respectively.
Description
本創作係關於一種封裝結構,且特別關於一種射頻輻射封裝結構。 The present invention relates to a packaging structure, and in particular to a radio frequency radiation packaging structure.
低/中/高軌衛星地面終端、5G之頻率範圍(FR2)毫米波基地站、雷達與遠距通訊、點對點微波鏈結與通訊系統前傳網路等產業應用,具備長距離與不同方位覆蓋之特性,建構主動陣列天線為實現此高增益與智慧波束掃瞄操作之雙重功能。鑑於通訊之需求與產業頻段之規劃,共構雙頻段與雙極化的天線特性需求為一個重要的特色。 Industrial applications such as low/medium/high-orbit satellite ground terminals, 5G frequency range (FR2) millimeter-wave base stations, radar and long-distance communications, point-to-point microwave links and communication system fronthaul networks, etc., have long-distance and different azimuth coverage. Features, the active array antenna is constructed to achieve the dual functions of high gain and intelligent beam scanning operation. In view of the needs of communication and the planning of industrial frequency bands, the requirements for co-constructing dual-band and dual-polarized antenna characteristics are an important feature.
傳統天線架構對於雙頻天線的實現採用兩組分離陣列天線來實現、或合併單一天線架構但共用相同極化之埠。在陣列天線的實現上,若使用單一天線組,則需要設計雙頻的天線單元,該雙頻操作共用一個輸出入埠,鑑於寬頻的需求,天線特性會產生減低問題,且單一天線單元結構來產生雙頻結構無法產生不同的體入埠來分開雙頻帶分離的射頻模組饋入。在使用雙頻帶的天線單元時,需要使用一組雙工器或連接射頻循環器, 但這樣會增加系統複雜度、增加損耗與增加成本,其隔離度亦較困難。然若使用兩組分離之陣列天線來針對兩個頻段饋入,如低軌衛星使用雙頻帶來進行上、下鏈資料傳送,建構陣列天線時需要建構兩組天線,故產生較大的體積與面積。 Traditional antenna architectures implement dual-band antennas by using two separate array antennas, or combining a single antenna architecture but sharing the same polarized ports. In the implementation of the array antenna, if a single antenna group is used, a dual-band antenna unit needs to be designed, and the dual-band operation shares one input and output port. In view of the broadband demand, the antenna characteristics will reduce the problem, and the single antenna unit structure Creating a dual-band structure cannot generate different body-in ports to separate the dual-band separate RF module feeds. When using a dual-band antenna unit, it is necessary to use a set of duplexers or connect a radio frequency circulator, But this will increase system complexity, increase loss and increase cost, and its isolation is also difficult. However, if two sets of separate array antennas are used to feed in two frequency bands, such as low-orbit satellites using dual frequency bands for uplink and downlink data transmission, two sets of antennas need to be constructed when constructing an array antenna, which results in a larger volume and area.
因此,本創作係在針對上述的困擾,提出一種射頻輻射封裝結構,尤其針對主動陣列天線之應用,以解決習知所產生的問題。 Therefore, this creation is aimed at the above problems, and proposes a radio frequency radiation packaging structure, especially for the application of active array antennas, so as to solve the problems caused by the prior art.
本創作提供一種射頻輻射封裝結構,其係建構多個輸出入埠,不同頻帶與不同極化方向分別對應不同輸出入埠,不同輸出入埠分別連接不同之天線金屬補片,以進行獨立運作,並減少對於雙工器與循環器的依賴,並藉由不同頻段天線補片之存在、產生隔離,可產生相鄰、相同頻段之天線射頻單元間的隔離度增加效果。此外,不同頻段之發射天線金屬補片與接收天線金屬補片呈交錯排列,並以物理性隔絕來提升隔離度,且減少交叉極化的產生。 This creation provides a radio frequency radiation packaging structure, which is constructed with multiple input and output ports. Different frequency bands and different polarization directions correspond to different output and output ports. Different output and output ports are connected to different antenna metal patches for independent operation. And reduce the dependence on duplexers and circulators, and through the existence of different frequency band antenna patches to generate isolation, it can produce the effect of increasing the isolation between adjacent and same frequency band antenna radio frequency units. In addition, the metal patches of the transmitting antenna and the metal patch of the receiving antenna of different frequency bands are arranged in a staggered manner, and are physically separated to improve the isolation and reduce the generation of cross polarization.
在本創作之一實施例中,一種射頻輻射封裝結構包含一多層導電佈線基板、多個雙頻兼雙極化射頻輻射結構、多個高頻發射射頻積體電路晶片與多個低頻接收射頻積體電路晶片。多層導電佈線基板包含多層介電層、導電跡線、第一群導電通孔與第二群導電通孔,其中導電跡線電性連接第一群導電通孔與第二群導電通 孔。所有雙頻兼雙極化射頻輻射結構設於多層導電佈線基板之底面,並嵌於多層導電佈線基板中。每一個高頻發射射頻積體電路晶片與每一個低頻接收射頻積體電路晶片設於多層導電佈線基板之頂面。每一個高頻發射射頻積體電路晶片通過第一導電結構電性連接第一群導電通孔,以藉此分別電性連接所有雙頻兼雙極化射頻輻射結構。所有低頻接收射頻積體電路晶片通過第二導電結構電性連接第二群導電通孔,以藉此分別電性連接所有雙頻兼雙極化射頻輻射結構。 In one embodiment of the present invention, a radio frequency radiation package structure includes a multilayer conductive wiring substrate, multiple dual-frequency and dual-polarized radio frequency radiation structures, multiple high-frequency transmitting radio frequency integrated circuit chips, and multiple low-frequency receiving radio frequency Integrated circuit chip. The multilayer conductive wiring substrate includes multiple dielectric layers, conductive traces, a first group of conductive vias and a second group of conductive vias, wherein the conductive traces electrically connect the first group of conductive vias and the second group of conductive vias hole. All dual-frequency and dual-polarization radio frequency radiation structures are arranged on the bottom surface of the multilayer conductive wiring substrate and embedded in the multilayer conductive wiring substrate. Each high frequency transmitting radio frequency integrated circuit chip and each low frequency receiving radio frequency integrated circuit chip are arranged on the top surface of the multilayer conductive wiring substrate. Each high-frequency emitting radio frequency integrated circuit chip is electrically connected to the first group of conductive vias through the first conductive structure, so as to electrically connect all the dual-band and dual-polarization radio frequency radiation structures respectively. All the low frequency receiving radio frequency integrated circuit chips are electrically connected to the second group of conductive vias through the second conductive structure, so as to electrically connect all the dual frequency and dual polarization radio frequency radiation structures respectively.
在本創作之一實施例中,每一雙頻兼雙極化射頻輻射結構包含一第一天線金屬補片層與一第二天線金屬補片層。第一天線金屬補片層設於多層導電佈線基板之底面。第二天線金屬補片層嵌於最靠近多層導電佈線基板之底面的兩層介電層之間,並電性連接第一群導電通孔與第二群導電通孔。 In an embodiment of the present invention, each dual-band and dual-polarized radio frequency radiation structure includes a first antenna metal patch layer and a second antenna metal patch layer. The first antenna metal patch layer is arranged on the bottom surface of the multilayer conductive wiring substrate. The second antenna metal patch layer is embedded between the two dielectric layers closest to the bottom surface of the multilayer conductive wiring substrate, and is electrically connected to the first group of conductive vias and the second group of conductive vias.
在本創作之一實施例中,第一天線金屬補片層包含四個第一發射天線金屬補片與四個第一接收天線金屬補片,第二天線金屬補片層包含四個第二發射天線金屬補片與四個第二接收天線金屬補片。所有第一發射天線金屬分別位於所有第二發射天線金屬補片之正下方,所有第一接收天線金屬補片分別位於所有第二接收天線金屬補片之正下方。所有第二發射天線金屬補片通過第一群導電通孔電性連接其對應之第一導電結構及高頻發射射頻積體電路晶片,所有第二接收天線金屬補片 通過第二群導電通孔電性連接其對應之第二導電結構及低頻接收射頻積體電路晶片。 In one embodiment of the present invention, the first antenna metal patch layer includes four first transmitting antenna metal patches and four first receiving antenna metal patches, and the second antenna metal patch layer includes four first antenna metal patches. Two transmitting antenna metal patches and four second receiving antenna metal patches. All the metal patches of the first transmitting antenna are respectively located directly under the metal patches of the second transmitting antennas, and the metal patches of all the first receiving antennas are respectively located directly below the metal patches of the second receiving antennas. All the metal patches of the second transmitting antenna are electrically connected to the corresponding first conductive structure and the high-frequency transmitting radio frequency integrated circuit chip through the first group of conductive vias, and all the metal patches of the second receiving antenna The corresponding second conductive structure and the low frequency receiving radio frequency integrated circuit chip are electrically connected through the second group of conductive via holes.
在本創作之一實施例中,所有雙頻兼雙極化射頻輻射結構之所有第一發射天線金屬補片排列為週期性之第一方陣,所有雙頻兼雙極化射頻輻射結構之所有第一接收天線金屬補片排列為週期性之第二方陣。第一方陣之多行與第二方陣之多行交替設置,第一方陣之多列與第二方陣之多列交替設置。 In one embodiment of this creation, all first transmitting antenna metal patches of all dual-frequency and dual-polarized radio frequency radiating structures are arranged in a periodic first square array, and all first transmitting antenna metal patches of all dual-frequency and dual-polarized radio frequency radiating structures A receiving antenna metal patch is arranged in a periodic second square array. Multiple rows of the first square matrix are arranged alternately with multiple rows of the second square matrix, and multiple columns of the first square matrix are alternately arranged with multiple columns of the second square matrix.
在本創作之一實施例中,所有第一發射天線金屬補片、所有第一接收天線金屬補片、所有第二發射天線金屬補片與所有第二接收天線金屬補片皆為矩形結構。 In an embodiment of the present invention, all the metal patches of the first transmitting antenna, all the metal patches of the first receiving antenna, all the metal patches of the second transmitting antenna and all the metal patches of the second receiving antenna are rectangular structures.
在本創作之一實施例中,多層導電佈線基板之頂面設有一發射訊號輸入連接埠與一接收訊號輸出連接埠。發射訊號輸入連接埠通過導電跡線與第一導電結構電性連接所有高頻發射射頻積體電路晶片,接收訊號輸出連接埠通過導電跡線與第二導電結構電性連接所有低頻接收射頻積體電路晶片。 In one embodiment of the present invention, a transmitting signal input connection port and a receiving signal output connection port are provided on the top surface of the multilayer conductive wiring substrate. The transmitting signal input connection port is electrically connected to all high-frequency transmitting radio frequency integrated circuit chips with the first conductive structure through conductive traces, and the receiving signal output connection port is electrically connected to all low-frequency receiving radio frequency integrated circuit chips through conductive traces and the second conductive structure circuit chip.
在本創作之一實施例中,發射訊號輸入連接埠與接收訊號輸出連接埠為超小型推入式微(Sub-Miniature Push-on Micro;SMPM)連接埠。 In one embodiment of the present invention, the transmitting signal input port and the receiving signal output port are sub-miniature push-on micro (SMPM) ports.
在本創作之一實施例中,多層導電佈線基板之頂面設有一第一電源連接埠與一第二電源連接埠。第一電源連接埠通過第一群導電通孔與第一導電結構電性 連接所有高頻發射射頻積體電路晶片,第二電源連接埠通過第二群導電通孔與第二導電結構電性連接所有低頻接收射頻積體電路晶片。 In one embodiment of the present invention, a first power connection port and a second power connection port are provided on the top surface of the multilayer conductive wiring substrate. The first power connection port is electrically connected to the first conductive structure through the first group of conductive vias All high frequency transmitting radio frequency integrated circuit chips are connected, and the second power connection port is electrically connected to all low frequency receiving radio frequency integrated circuit chips through the second group of conductive vias and the second conductive structure.
在本創作之一實施例中,第一電源連接埠與第二電源連接埠為串行外設介面(Serial Peripheral Interface Bus,SPI)。 In an embodiment of the present invention, the first power connection port and the second power connection port are Serial Peripheral Interface Bus (SPI).
在本創作之一實施例中,第一導電結構與第二導電結構為導電焊球。 In an embodiment of the present invention, the first conductive structure and the second conductive structure are conductive solder balls.
基於上述,射頻輻射封裝結構以多層導電佈線基板建構多個輸出入埠,不同頻帶與不同極化方向分別對應不同輸出入埠,不同輸出入埠分別連接不同之天線補片陣列,以進行獨立運作,並減少對於雙工器與循環器的依賴。此外,發射天線金屬補片與接收天線金屬補片呈交錯排列,並以物理性隔絕來提升隔離度,且減少交叉極化的產生。 Based on the above, the RF radiation package structure uses a multi-layer conductive wiring substrate to construct multiple input and output ports. Different frequency bands and different polarization directions correspond to different input and output ports. Different input and output ports are connected to different antenna patch arrays for independent operation. , and reduce the dependence on duplexers and circulators. In addition, the metal patches of the transmitting antenna and the metal patches of the receiving antenna are arranged in a staggered manner, and are physically isolated to improve isolation and reduce cross-polarization.
茲為使 貴審查委員對本創作的結構特徵及所達成的功效更有進一步的瞭解與認識,謹佐以較佳的實施例圖及配合詳細的說明,說明如後: In order to enable your review committee to have a better understanding and understanding of the structural features and the achieved effects of this creation, I would like to provide a better embodiment diagram and a detailed description, as follows:
1:射頻輻射封裝結構 1: RF radiation package structure
10:多層導電佈線基板 10: Multilayer conductive wiring substrate
100:介電層 100: dielectric layer
101:導電跡線 101: Conductive traces
102:第一群導電通孔 102: The first group of conductive vias
103:第二群導電通孔 103: The second group of conductive vias
104:功率分配器 104: Power splitter
11:雙頻兼雙極化射頻輻射結構 11: Dual frequency and dual polarization RF radiation structure
110:第一天線金屬補片層 110: The first antenna metal patch layer
1100:第一發射天線金屬補片 1100: The metal patch of the first transmitting antenna
1101:第一接收天線金屬補片 1101: The metal patch of the first receiving antenna
111:第二天線金屬補片層 111: Second antenna metal patch layer
1110:第二發射天線金屬補片 1110: Second transmitting antenna metal patch
1111:第二接收天線金屬補片 1111: Second receiving antenna metal patch
12:高頻發射射頻積體電路晶片 12: High frequency transmitting radio frequency integrated circuit chip
13:低頻接收射頻積體電路晶片 13: Low frequency receiving radio frequency integrated circuit chip
14:第一導電結構 14: The first conductive structure
15:第二導電結構 15: Second conductive structure
16:發射訊號輸入連接埠 16: Transmit signal input port
17:接收訊號輸出連接埠 17: Receive signal output port
18:第一電源連接埠 18: The first power port
19:第二電源連接埠 19:Second power port
2:母電路板 2: mother circuit board
200:介電板 200: dielectric board
201:中頻輸入埠 201: IF input port
202:第一功率分配器 202: The first power splitter
203:升頻器 203: Upconverter
204:第二功率分配器 204: Second power divider
205:第三功率分配器 205: The third power divider
206:降頻器 206: Downconverter
207:第四功率分配器 207: The fourth power divider
208:中頻輸出埠 208: IF output port
209:第一訊號連接埠 209: The first signal port
210:第二訊號連接埠 210: Second signal port
211:第一供電埠 211: The first power supply port
212:第二供電埠 212: Second power supply port
H:水平極化訊號 H: Horizontal polarization signal
V:垂直極化訊號 V: vertically polarized signal
IM:輸入中頻訊號 IM: input intermediate frequency signal
H1:第一高頻訊號 H1: the first high frequency signal
R1:第一射頻訊號 R1: the first RF signal
R2:第二射頻訊號 R2: Second RF signal
H2:第二高頻訊號 H2: Second high frequency signal
OM:輸出中頻訊號 OM: output intermediate frequency signal
M1:第一中頻訊號 M1: The first intermediate frequency signal
U:升頻訊號 U: up frequency signal
TH:加總高頻訊號 TH: sum high frequency signal
M2:第二中頻訊號 M2: Second IF signal
第1圖為本創作之一實施例之射頻輻射封裝結構之部分的結構剖視圖。 Fig. 1 is a structural cross-sectional view of a part of the RF radiation packaging structure of an embodiment of the present invention.
第2圖為本創作之一實施例之射頻輻射封裝結構之頂視圖。 Figure 2 is a top view of the RF radiation package structure of an embodiment of the present invention.
第3圖為本創作之一實施例之射頻輻射封裝結構之底視圖。 Fig. 3 is a bottom view of a radio frequency radiation package structure of an embodiment of the present invention.
第4圖為本創作之一實施例之母電路板之頂視圖。 Fig. 4 is a top view of the mother circuit board of one embodiment of the present invention.
第5圖與第6圖為本創作之一實施例之一個射頻輻射封裝結構對應之電路方塊圖。 Fig. 5 and Fig. 6 are circuit block diagrams corresponding to a radio frequency radiation package structure of an embodiment of the present invention.
第7圖與第8圖為本創作之一實施例之母電路板對應之電路方塊圖。 Fig. 7 and Fig. 8 are circuit block diagrams corresponding to the mother circuit board of one embodiment of the invention.
本創作之實施例將藉由下文配合相關圖式進一步加以解說。盡可能的,於圖式與說明書中,相同標號係代表相同或相似構件。於圖式中,基於簡化與方便標示,形狀與厚度可能經過誇大表示。可以理解的是,未特別顯示於圖式中或描述於說明書中之元件,為所屬技術領域中具有通常技術者所知之形態。本領域之通常技術者可依據本創作之內容而進行多種之改變與修改。 Embodiments of the invention will be further explained below with the help of related drawings. Wherever possible, the same reference numerals have been used throughout the drawings and description to refer to the same or similar components. In the drawings, the shape and thickness may be exaggerated for the sake of simplification and convenient labeling. It should be understood that elements not particularly shown in the drawings or described in the specification are forms known to those skilled in the art. Those skilled in the art can make various changes and modifications based on the content of this creation.
當一個元件被稱為『在...上』時,它可泛指該元件直接在其他元件上,也可以是有其他元件存在於兩者之中。相反地,當一個元件被稱為『直接在』另一元件,它是不能有其他元件存在於兩者之中間。如本文所用,詞彙『及/或』包含了列出的關聯項目中的一個或多個的任何組合。 When an element is referred to as being "on", it may generally mean that the element is directly on other elements, or there may be other elements present in between. Conversely, when an element is referred to as being "directly on" another element, it cannot have the other element in between. As used herein, the word "and/or" includes any combination of one or more of the associated listed items.
於下文中關於“一個實施例”或“一實施例” 之描述係指關於至少一實施例內所相關連之一特定元件、結構或特徵。因此,於下文中多處所出現之“一個實施例”或“一實施例”之多個描述並非針對同一實施例。再者,於一或多個實施例中之特定構件、結構與特徵可依照一適當方式而結合。 In the following about "one embodiment" or "an embodiment" The description herein refers to a particular element, structure or feature associated with at least one embodiment. Therefore, multiple descriptions of "one embodiment" or "an embodiment" appearing in various places below do not refer to the same embodiment. Furthermore, specific components, structures and features in one or more embodiments may be combined in an appropriate manner.
揭露特別以下述例子加以描述,這些例子僅係用以舉例說明而已,因為對於熟習此技藝者而言,在不脫離本揭示內容之精神和範圍內,當可作各種之更動與潤飾,因此本揭示內容之保護範圍當視後附之申請專利範圍所界定者為準。在通篇說明書與申請專利範圍中,除非內容清楚指定,否則「一」以及「該」的意義包含這一類敘述包括「一或至少一」該元件或成分。此外,如本揭露所用,除非從特定上下文明顯可見將複數個排除在外,否則單數冠詞亦包括複數個元件或成分的敘述。而且,應用在此描述中與下述之全部申請專利範圍中時,除非內容清楚指定,否則「在其中」的意思可包含「在其中」與「在其上」。在通篇說明書與申請專利範圍所使用之用詞(terms),除有特別註明,通常具有每個用詞使用在此領域中、在此揭露之內容中與特殊內容中的平常意義。某些用以描述本揭露之用詞將於下或在此說明書的別處討論,以提供從業人員(practitioner)在有關本揭露之描述上額外的引導。在通篇說明書之任何地方之例子,包含在此所討論之任何用詞之例子的使用,僅係用以舉例說明,當然不限制本揭露或任何例示 用詞之範圍與意義。同樣地,本揭露並不限於此說明書中所提出之各種實施例。 The disclosure is particularly described with the following examples, which are for illustration only, since various changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the disclosure, and therefore this The scope of protection of the disclosed content shall be subject to the definition of the appended patent application scope. Throughout the specification and claims, the meanings of "a" and "the" include that such description includes "one or at least one" of the element or component, unless the content clearly specifies otherwise. Furthermore, as used in the present disclosure, singular articles also include descriptions of plural elements or components, unless it is obvious from the specific context that the plural is excluded. Also, as applied in this description and all claims below, the meaning of "in" may include "in" and "on" unless the content clearly dictates otherwise. The terms (terms) used throughout the specification and patent claims generally have the ordinary meaning of each term used in this field, in the content of this disclosure and in the specific content, unless otherwise specified. Certain terms used to describe the disclosure are discussed below or elsewhere in this specification to provide practitioners with additional guidance in describing the disclosure. The use of examples anywhere throughout the specification, including examples of any terms discussed herein, is by way of illustration only and certainly not limiting of this disclosure or any example The scope and meaning of words used. Likewise, the present disclosure is not limited to the various embodiments presented in this specification.
此外,若使用「電(性)耦接」或「電(性)連接」一詞在此係包含任何直接及間接的電氣連接手段。舉例而言,若文中描述一第一裝置電性耦接於一第二裝置,則代表該第一裝置可直接連接於該第二裝置,或透過其他裝置或連接手段間接地連接至該第二裝置。另外,若描述關於電訊號之傳輸、提供,熟習此技藝者應該可了解電訊號之傳遞過程中可能伴隨衰減或其他非理想性之變化,但電訊號傳輸或提供之來源與接收端若無特別敘明,實質上應視為同一訊號。舉例而言,若由電子電路之端點A傳輸(或提供)電訊號S給電子電路之端點B,其中可能經過一電晶體開關之源汲極兩端及/或可能之雜散電容而產生電壓降,但此設計之目的若非刻意使用傳輸(或提供)時產生之衰減或其他非理想性之變化而達到某些特定的技術效果,電訊號S在電子電路之端點A與端點B應可視為實質上為同一訊號。 In addition, if the term "electrical (sexual) coupling" or "electrical (sexual) connection" is used herein, it includes any direct and indirect electrical connection means. For example, if it is described that a first device is electrically coupled to a second device, it means that the first device can be directly connected to the second device, or indirectly connected to the second device through other devices or connection means. device. In addition, if you describe the transmission and provision of electrical signals, those familiar with the art should be able to understand that the transmission of electrical signals may be accompanied by attenuation or other non-ideal changes, but if the source and receiver of electrical signal transmission or provision are not special In essence, it should be regarded as the same signal. For example, if an electrical signal S is transmitted (or provided) from terminal A of the electronic circuit to terminal B of the electronic circuit, it may pass through the source and drain terminals of a transistor switch and/or possible stray capacitance. A voltage drop is generated, but if the purpose of this design is not to deliberately use the attenuation or other non-ideal changes generated during transmission (or provision) to achieve certain specific technical effects, the electrical signal S is between the terminal A and the terminal of the electronic circuit. B should be considered as substantially the same signal.
除非特別說明,一些條件句或字詞,例如「可以(can)」、「可能(could)」、「也許(might)」,或「可(may)」,通常是試圖表達本案實施例具有,但是也可以解釋成可能不需要的特徵、元件,或步驟。在其他實施例中,這些特徵、元件,或步驟可能是不需要的。 Unless otherwise specified, some conditional sentences or words, such as "can (can)", "maybe (could)", "maybe (might)", or "may" are usually intended to express that the embodiments of the present case have, However, it may also be interpreted as a feature, element, or step that may not be required. In other embodiments, these features, elements, or steps may not be required.
可了解如在此所使用的用詞「包含(comprising)」、「包含(including)」、「具有 (having)」、「含有(containing)」、「包含(involving)」等等,為開放性的(open-ended),即意指包含但不限於。另外,本創作的任一實施例或申請專利範圍不須達成本創作所揭露之全部目的或優點或特點。此外,摘要部分和標題僅是用來輔助專利文件搜尋之用,並非用來限制本創作之申請專利範圍。 It will be understood that the terms "comprising", "including", "having (having)", "containing (containing)", "involving (involving)", etc., are open-ended (open-ended), which means including but not limited to. In addition, any embodiment or patent scope of this creation does not need to achieve all the purposes or advantages or characteristics disclosed in this creation. In addition, the abstract part and the title are only used to assist in the search of patent documents, and are not used to limit the patent scope of this creation.
以下將提供一種射頻輻射封裝結構,其以多層導電佈線基板建構多個輸出入埠,不同頻帶與不同極化方向分別對應不同輸出入埠,不同輸出入埠分別連接不同之天線金屬補片,以進行獨立運作,並減少對於雙工器與循環器的依賴。此外,發射天線金屬補片與接收天線金屬補片呈交錯排列,並以物理性隔絕來提升隔離度,以減少交叉極化的產生。射頻輻射封裝結構能滿足低軌衛星之上、下鏈及5G之頻率範圍(FR2)對於雙頻之需求,可以針對各項應用需求,建構雙線性或雙圓極化的輻射需求,滿足陣列天線建構時之高增益與智慧掃瞄所需要之天線特性。 The following will provide a radio frequency radiation packaging structure, which uses a multi-layer conductive wiring substrate to construct multiple input and output ports. Different frequency bands and different polarization directions correspond to different output and output ports, and different output and output ports are connected to different antenna metal patches. Operate independently and reduce dependence on duplexers and circulators. In addition, the metal patches of the transmitting antenna and the metal patches of the receiving antenna are arranged in a staggered manner, and physical isolation is used to improve the isolation and reduce the generation of cross polarization. The RF radiation package structure can meet the dual-frequency requirements of the uplink, downlink and 5G frequency range (FR2) of low-orbit satellites. It can construct dual-linear or dual-polarized radiation requirements for various application requirements to meet the array requirements. Antenna characteristics required for high gain and intelligent scanning during antenna construction.
第1圖為本創作之一實施例之射頻輻射封裝結構之部分的結構剖視圖,第2圖為本創作之一實施例之射頻輻射封裝結構之頂視圖,第3圖為本創作之一實施例之射頻輻射封裝結構之底視圖。請參閱第1圖、第2圖與第3圖,以下介紹本創作之射頻輻射封裝結構1之一實施例。射頻輻射封裝結構1包含一多層導電佈線基板10、多個雙頻兼雙極化射頻輻射結構11、多個高頻發射射頻積
體電路晶片12、多個低頻接收射頻積體電路晶片13、第一導電結構14與第二導電結構15。第一導電結構14與第二導電結構15可為,但不限於導電焊錫球。多層導電佈線基板10包含多層介電層100、導電跡線101、第一群導電通孔102與第二群導電通孔103,其中導電跡線101電性連接第一群導電通孔102與第二群導電通孔103。所有雙頻兼雙極化射頻輻射結構11設於多層導電佈線基板10之底面,並嵌於多層導電佈線基板10中。所有高頻發射射頻積體電路晶片12與所有低頻接收射頻積體電路晶片13設於多層導電佈線基板10之頂面,其中所有高頻發射射頻積體電路晶片12通過第一導電結構14電性連接第一群導電通孔102,以藉此分別電性連接所有雙頻兼雙極化射頻輻射結構11,所有低頻接收射頻積體電路晶片13通過第二導電結構15電性連接第二群導電通孔103,以藉此分別電性連接所有雙頻兼雙極化射頻輻射結構11。
Figure 1 is a structural cross-sectional view of a part of the RF radiation packaging structure of one embodiment of the invention, Figure 2 is a top view of the RF radiation packaging structure of one embodiment of the invention, and Figure 3 is an embodiment of the invention The bottom view of the RF radiation package structure. Please refer to FIG. 1 , FIG. 2 and FIG. 3 , the following introduces an embodiment of the radio frequency
在本創作之某些實施例中,每一雙頻兼雙極化射頻輻射結構11可包含一第一天線金屬補片層110與一第二天線金屬補片層111。第一天線金屬補片層110設於多層導電佈線基板10之底面,第二天線金屬補片層111嵌於最靠近多層導電佈線基板10之底面的兩層介電層100之間,並電性連接第一群導電通孔102與第二群導電通孔103。
In some embodiments of the present invention, each dual-band and dual-polarized radio
具體而言,第一天線金屬補片層110可包含四個第一發射天線金屬補片1100與四個第一接收天線金
屬補片1101,第二天線金屬補片層111可包含四個第二發射天金屬補片1110與四個第二接收天線金屬補片1111。所有第一發射天線金屬補片1100、所有第一接收天線金屬補片1101、所有第二發射天線金屬補片1110與所有第二接收天線金屬補片1111可皆為,但不限於矩形、或無缺口之形狀。所有第一發射天線金屬補片1100分別位於所有第二發射天線金屬補片1110之正下方,所有第一接收天線金屬補片1101分別位於所有第二接收天線金屬補片1111之正下方。所有第二發射天線金屬補片1110通過第一群導電通孔102電性連接其對應之第一導電結構14及高頻發射射頻積體電路晶片12,所有第二接收天線金屬補片1111通過第二群導電通孔103電性連接其對應之第二導電結構15及低頻接收射頻積體電路晶片13。舉例來說,一個高頻發射射頻積體電路晶片12對應之第一群導電通孔102可區分為四個群組,第一群導電通孔102之每一群組又包含分別傳送高頻水平極化訊號H與高頻垂直極化訊號V之兩組子通孔。第一群導電通孔102之每一群組電性連接同一個第二發射天線金屬補片1110。一個低頻接收射頻積體電路晶片13對應之第二群導電通孔103可區分為四個群組,第二群導電通孔103之每一群組又包含分別傳送低頻水平極化訊號H與低頻垂直極化訊號V之兩組子通孔。第二群導電通孔103之每一群組電性連接同一個第二接收天線金屬補片1111。每一組子通孔視為一個獨立輸出入埠,其能進行獨立運作,
以減少隔頻之干擾與對於雙工器與循環器的依賴。
Specifically, the first antenna
所有雙頻兼雙極化射頻輻射結構11之所有第一發射天線金屬補片1100排列為週期性第一方陣,所有雙頻兼雙極化射頻輻射結構11之所有第一接收天線金屬補片1101排列為週期性第二方陣,第一方陣之多行與第二方陣之多行交替設置,第一方陣之多列與第二方陣之多列交替設置。因此,第一方陣與第二方陣呈交錯排列,並以物理性隔絕來提升隔離度,以減少交叉極化的產生。
All first transmitting
多層導電佈線基板10之頂面可設有一發射訊號輸入連接埠16與一接收訊號輸出連接埠17。發射訊號輸入連接埠16與接收訊號輸出連接埠17可為、但不限於超小型推入式微(Sub-Miniature Push-on Micro;SMPM)連接埠。發射訊號輸入連接埠16通過導電跡線101與第一導電結構14電性連接所有高頻發射射頻積體電路晶片12。接收訊號輸出連接埠17通過導電跡線101與第二導電結構15電性連接所有低頻接收射頻積體電路晶片13。多層導電佈線基板10之頂面更可設有一第一電源連接埠18與一第二電源連接埠19。第一電源連接埠18與第二電源連接埠19可為,但不限於串行外設介面(Serial Peripheral Interface Bus,SPI)或控制訊號線。第一電源連接埠18通過第一群導電通孔102與第一導電結構14電性連接所有高頻發射射頻積體電路晶片12,第二電源連接埠19通過第二群導電通孔103與第二
導電結構15電性連接所有低頻接收射頻積體電路晶片13。
The top surface of the multilayer
以下將提供一種陣列式射頻系統,其將多個射頻輻射封裝結構水平堆疊在一母電路板上,以簡化系統複雜度與降低製造成本,並增加天線特性之穩定度與產品之應用擴張度,如同主流汽車採用共通底盤一樣。此陣列式射頻系統具有可重組化之架構,以對應不同應用情境,產生不同射頻功率。當陣列式射頻系統有異常問題時,可置換部分之射頻輻射封裝結構,以快速偵測故障問題,並避免一個模組失能即造成整體射頻系統失效的傷害,以降低維護成本。射頻輻射封裝結構為由射頻與天線共構的模組,母電路板由訊號傳遞、電源供應、射頻訊號之升降等系統功能為主。因此,射頻輻射封裝結構之設計強調模組化、量產方便性與維修置換性為主的射頻與天線共構模組。母電路板強調系統之擴充性,包括陣列天線的大小、運作電壓的擴充、訊號傳遞之串並聯、散熱機制之實現。此陣列式射頻系統使用通用介面來提升系統的共用性,射頻輻射封裝結構與母電路板整合的介面形成空氣通道來導熱散發,以減少熱能的系統影響,並兼顧機械與電子特性。 The following will provide an array radio frequency system, which horizontally stacks multiple radio frequency radiation package structures on a mother circuit board to simplify system complexity and reduce manufacturing costs, and increase the stability of antenna characteristics and product application expansion. Just like mainstream cars use a common chassis. This array radio frequency system has a reconfigurable structure to correspond to different application scenarios and generate different radio frequency power. When there is an abnormality in the array RF system, part of the RF radiation packaging structure can be replaced to quickly detect the fault and avoid the damage caused by the failure of one module that will cause the failure of the entire RF system to reduce maintenance costs. The RF radiation package structure is a module co-constructed by RF and antenna, and the mother circuit board is mainly responsible for system functions such as signal transmission, power supply, and RF signal rise and fall. Therefore, the design of the RF radiation package structure emphasizes modularization, mass production convenience, and maintenance and replacement-based RF and antenna co-construction modules. The mother circuit board emphasizes the scalability of the system, including the size of the array antenna, the expansion of the operating voltage, the series and parallel connection of signal transmission, and the realization of the heat dissipation mechanism. This array RF system uses a common interface to improve the commonality of the system. The integrated interface of the RF radiation package structure and the mother circuit board forms an air channel to conduct heat and dissipate heat, so as to reduce the system impact of heat energy and take into account both mechanical and electronic characteristics.
第4圖為本創作之一實施例之母電路板之頂視圖。請參閱第4圖與第2圖,以下介紹陣列式射頻系統之一實施例。陣列式射頻系統包含一母電路板2與多個射頻輻射封裝結構1。所有射頻輻射封裝結構1水平堆疊於
母電路板2上,並排列成一陣列,且電性連接母電路板2。所有射頻輻射封裝結構1區分為多個射頻群組。以第4圖為例,所有射頻輻射封裝結構1排列成4×4陣列,每一射頻群組包含此陣列之每一行的四個射頻輻射封裝結構1。
Fig. 4 is a top view of the mother circuit board of one embodiment of the present invention. Please refer to FIG. 4 and FIG. 2 , an embodiment of an array radio frequency system is introduced below. The array radio frequency system includes a
第5圖與第6圖為本創作之一實施例之一個射頻輻射封裝結構對應之電路方塊圖,第7圖與第8圖為本創作之一實施例之母電路板對應之電路方塊圖。請參閱第2圖、第4圖、第5圖、第6圖、第7圖與第8圖。在運作上,母電路板2接收一輸入中頻訊號IM,並對輸入中頻訊號IM進行升頻,以藉此產生多個第一高頻訊號H1。每一射頻輻射封裝結構1之多層導電佈線基板10設有功率分配器104,功率分配器104用以分配或加總高頻訊號之功率。所有射頻輻射封裝結構1之所有射頻群組分別接收所有第一高頻訊號H1,並據此發射多個第一射頻訊號R1。所有射頻輻射封裝結構1之所有射頻群組接收多個第二射頻訊號R2,以藉此分別對應所有射頻群組產生多個第二高頻訊號H2,母電路板2對所有第二高頻訊號H2進行降頻,以藉此產生一輸出中頻訊號OM。
Fig. 5 and Fig. 6 are circuit block diagrams corresponding to a radio frequency radiation package structure of an embodiment of the present creation, and Fig. 7 and Fig. 8 are circuit block diagrams corresponding to the mother circuit board of an embodiment of the present creation. Please refer to Figure 2, Figure 4, Figure 5, Figure 6, Figure 7 and Figure 8. In operation, the
在本創作之某些實施例中,母電路板2可包含一介電板200、一中頻輸入埠201、一第一功率分配器202、多個升頻器203、多個第二功率分配器204、多個第三功率分配器205、多個降頻器206、一第四功率分配器207、一中頻輸出埠208、多個第一訊號連接埠209、多個第二訊號連接埠210、多個第一供電埠211與多個第
二供電埠212。所有第一訊號連接埠209與所有第二訊號連接埠210可為,但不限於超小型推入式微(Sub-Miniature Push-on Micro;SMPM)連接埠。所有第一供電埠211與所有第二供電埠212可為,但不限於串行外設介面(Serial Peripheral Interface Bus,SPI)。中頻輸入埠201與中頻輸出埠208可為,但不限於超小型A(Sub-Miniature-A,SMA)連接埠。
In some embodiments of the present invention, the
介電板200上設有所有射頻輻射封裝結構1、中頻輸入埠201、第一功率分配器202、所有升頻器203、所有第二功率分配器204、所有第三功率分配器205、所有降頻器206、第四功率分配器207、中頻輸出埠208、所有第一訊號連接埠209、所有第二訊號連接埠210、所有第一供電埠211與所有第二供電埠212。第一功率分配器202電性連接中頻輸入埠201,所有升頻器203分別電性連接第一功率分配器202之多個輸出端,所有第二功率分配器204分別電性連接所有升頻器203與所有射頻輻射封裝結構1之所有射頻群組。所有第三功率分配器205分別電性連接所有射頻輻射封裝結構之所有射頻群組,所有降頻器206分別電性連接所有第三功率分配器205,第四功率分配器207電性連接所有降頻器206,中頻輸出埠208電性連接第四功率分配器207。
All radio frequency
第一功率分配器202通過中頻輸入埠201接收輸入中頻訊號IM,並依第一功率分配器202之所有輸出端的數量分配輸入中頻訊號IM之功率,以於第一功率
分配器202之所有輸出端產生多個第一中頻訊號M1。所有升頻器203接收所有第一中頻訊號M1,並對其進行升頻,以產生多個升頻訊號U。每一第二功率分配器204接收其對應之升頻訊號U,並依第二功率分配器204之多個輸出端的數量分配對應之升頻訊號U,以產生第一高頻訊號H1。
The
每一第三功率分配器205接收其對應之第二高頻訊號H2,並加總對應之第二高頻訊號H2之功率,以產生一加總高頻訊號TH。所有降頻器206接收其對應之加總高頻訊號TH,並對其進行降頻,以產生多個第二中頻訊號M2。第四功率分配器207接收所有第二中頻訊號M2,並加總所有第二中頻訊號M2之功率,以產生輸出中頻訊號OM。中頻輸出埠208用以輸出此輸出中頻訊號OM。
Each
所有第一訊號連接埠209區分為多個第一群組,所有第一群組分別電性連接所有第二功率分配器204,並分別電性連接所有射頻群組之發射訊號輸入連接埠16,每一第一群組電性連接於其對應之第二功率分配器204與射頻群組之發射訊號輸入連接埠16之間。所有第二訊號連接埠210區分為多個第二群組,所有第二群組分別電性連接所有第三功率分配器205,並分別電性連接所有射頻群組之接收訊號輸出連接埠17,每一第二群組電性連接於其對應之第三功率分配器205與射頻群組之接收訊號輸出連接埠17之間。此外,所有第一供電埠211
分別電性連接所有射頻輻射封裝結構1之第一電源連接埠18,所有第二供電埠212分別電性連接所有射頻輻射封裝結構1之第二電源連接埠19。
All the first
由於多個射頻輻射封裝結構1水平堆疊在母電路板2上,故能簡化系統複雜度與降低製造成本,並增加天線特性之穩定度與產品之應用擴張度。此陣列式射頻系統具有可重組化之架構,以對應不同應用情境,產生不同射頻功率。當陣列式射頻系統有異常問題時,可置換部分之射頻輻射封裝結構1,以快速偵測故障問題,並避免一個模組失能即造成整體射頻系統失效的傷害,以降低維護成本。射頻輻射封裝結構1與母電路板2整合的介面形成空氣通道來導熱散發,以減少熱能的系統影響,並兼顧機械與電子特性。
Since multiple radio frequency
請參閱第1圖、第5圖與第6圖。多層導電佈線基板10之功率分配器104與高頻發射射頻積體電路晶片12接收第一高頻訊號H1,並據此通過雙頻兼雙極化射頻輻射結構11發射第一射頻訊號R1。多層導電佈線基板10之功率分配器104與低頻接收射頻積體電路晶片13通過雙頻兼雙極化射頻輻射結構11接收第二射頻訊號R2,並藉此產生第二高頻訊號H2。第一發射天線金屬補片1100與第二發射天線金屬補片1110用以發射第一射頻訊號R1,第一接收發射天線金屬補片1101與第二接收天線金屬補片1111用以接收第二射頻訊號R2。
Please refer to Figure 1, Figure 5 and Figure 6. The
根據上述實施例,射頻輻射封裝結構以多層 導電佈線基板建構多個輸出入埠,不同頻帶與不同極化方向分別對應不同輸出入埠,不同輸出入埠分別連接不同之天線金屬補片,以進行獨立運作,並減少對於雙工器與循環器的依賴。此外,發射天線金屬補片與接收天線金屬補片呈交錯排列,並以物理性隔絕來提升隔離度,且減少交叉極化的產生。 According to the above-mentioned embodiments, the radio frequency radiation packaging structure is multilayered The conductive wiring substrate constructs multiple I/O ports. Different frequency bands and different polarization directions correspond to different I/O ports. Different I/O ports are connected to different antenna metal patches for independent operation and reduce the need for duplexers and loops. device dependencies. In addition, the metal patches of the transmitting antenna and the metal patches of the receiving antenna are arranged in a staggered manner, and are physically isolated to improve isolation and reduce cross-polarization.
以上所述者,僅為本創作一較佳實施例而已,並非用來限定本創作實施之範圍,故舉凡依本創作申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本創作之申請專利範圍內。 The above is only a preferred embodiment of this creation, and it is not used to limit the scope of implementation of this creation. Therefore, all equal changes and modifications are made according to the shape, structure, characteristics and spirit described in the patent scope of this creation. , should be included in the scope of the patent application for this creation.
10:多層導電佈線基板 10: Multilayer conductive wiring substrate
100:介電層 100: dielectric layer
101:導電跡線 101: Conductive traces
102:第一群導電通孔 102: The first group of conductive vias
103:第二群導電通孔 103: The second group of conductive vias
11:雙頻兼雙極化射頻輻射結構 11: Dual frequency and dual polarization RF radiation structure
110:第一天線金屬補片層 110: The first antenna metal patch layer
1100:第一發射天線金屬補片 1100: The metal patch of the first transmitting antenna
1101:第一接收天線金屬補片 1101: The metal patch of the first receiving antenna
111:第二天線金屬補片層 111: Second antenna metal patch layer
1110:第二發射天線金屬補片 1110: Second transmitting antenna metal patch
1111:第二接收天線金屬補片 1111: Second receiving antenna metal patch
12:高頻發射射頻積體電路晶片 12: High frequency transmitting radio frequency integrated circuit chip
13:低頻接收射頻積體電路晶片 13: Low frequency receiving radio frequency integrated circuit chip
14:第一導電結構 14: The first conductive structure
15:第二導電結構 15: Second conductive structure
18:第一電源連接埠 18: The first power port
19:第二電源連接埠 19:Second power port
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