TW202346437A - Fabrication method of polycrystalline phase polyvinylidene fluoride film and wearable device using polycrystalline phase polyvinylidene fluoride film - Google Patents

Fabrication method of polycrystalline phase polyvinylidene fluoride film and wearable device using polycrystalline phase polyvinylidene fluoride film Download PDF

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TW202346437A
TW202346437A TW111120191A TW111120191A TW202346437A TW 202346437 A TW202346437 A TW 202346437A TW 111120191 A TW111120191 A TW 111120191A TW 111120191 A TW111120191 A TW 111120191A TW 202346437 A TW202346437 A TW 202346437A
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polyvinylidene fluoride
fluoride film
wearable device
polycrystalline
film
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TWI828170B (en
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高治進
葉佳鎮
廖經皓
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大陸商業成科技(成都)有限公司
大陸商業成光電(深圳)有限公司
大陸商業成光電(無錫)有限公司
英特盛科技股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C41/00Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
    • B29C41/24Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of indefinite length
    • B29C41/30Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of indefinite length incorporating preformed parts or layers, e.g. moulding around inserts or for coating articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C41/00Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
    • B29C41/34Component parts, details or accessories; Auxiliary operations
    • B29C41/38Moulds, cores or other substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C41/00Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
    • B29C41/34Component parts, details or accessories; Auxiliary operations
    • B29C41/42Removing articles from moulds, cores or other substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C41/00Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
    • B29C41/34Component parts, details or accessories; Auxiliary operations
    • B29C41/52Measuring, controlling or regulating

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

The present invention proposes a fabrication method of a polycrystalline phase polyvinylidene fluoride (PVDF) film. The polycrystalline phase PVDF film obtained by the fabrication method of the present invention has both a β crystal phase and a γ crystal phase, so the polycrystalline phase PVDF film of the present invention has a good piezoelectric effect to sense pressure or tension in different directions. At the same time, the polycrystalline phase PVDF film of the present invention also has a good pyroelectric effect for sensing the surrounding temperature.

Description

多晶相聚偏氟乙烯薄膜的製作方法以及使用多晶相聚偏乙烯薄膜的穿戴式裝置Method for producing polycrystalline polyvinylidene fluoride film and wearable device using polycrystalline polyvinylidene fluoride film

本發明是有關一種聚偏氟乙烯薄膜(polyvinylidene difluoride; PVDF)的製作方法,特別是關於一種多晶相的聚偏氟乙烯薄膜的製作方法。The invention relates to a method for making a polyvinylidene difluoride (PVDF) film, and in particular to a method for making a polycrystalline polyvinylidene fluoride film.

聚偏氟乙烯(Polyvinylidene fluoride; PVDF)除具有良好的耐化學腐蝕性、耐高溫性、耐氧化性、耐候性、耐射線輻射性能外,還具有壓電效應、熱釋電效應和介電效應,因此被廣泛應用於壓電薄膜、太陽能背板膜、鋰電池隔膜等功能性薄膜。壓電效應是指,當壓電晶體在外力作用下發生形變時,在其某些相對應的表面上會出現等量異號電荷。熱釋電效應是指,極性電介質因溫度變化而發生電極化改變的現象。熱釋電效應可用於量測環境溫度或體溫。In addition to its good chemical resistance, high temperature resistance, oxidation resistance, weather resistance, and radiation resistance, polyvinylidene fluoride (PVDF) also has piezoelectric effect, pyroelectric effect, and dielectric effect. , so it is widely used in functional films such as piezoelectric films, solar backsheet films, and lithium battery separators. The piezoelectric effect means that when a piezoelectric crystal deforms under the action of external force, equal amounts of charges with different signs will appear on some corresponding surfaces. The pyroelectric effect refers to the phenomenon that the electrical polarization of a polar dielectric changes due to temperature changes. The pyroelectric effect can be used to measure ambient temperature or body temperature.

與傳統的壓電材料(如陶瓷壓電片)相比,聚偏氟乙烯具有頻響寬、動態範圍大、力點轉換靈敏度高、力學性能好、機械強度高、聲阻抗易匹配等特點,並具有重量輕、柔軟不脆、耐衝擊、不易受水和化學藥品的汙染、易製成任意形狀及面積不等的片材或管材等優勢。在力學、聲學、光學、電子、測量、紅外、安全報警、醫療保健、軍事、交通、資訊工程、辦公自動化、海洋開發、地質勘探等技術領域應用十分廣泛。Compared with traditional piezoelectric materials (such as ceramic piezoelectric sheets), polyvinylidene fluoride has the characteristics of wide frequency response, large dynamic range, high force point conversion sensitivity, good mechanical properties, high mechanical strength, and easy matching of acoustic impedance. It also has the advantages of light weight, softness and non-brittleness, impact resistance, not easily contaminated by water and chemicals, and easy to be made into sheets or pipes of any shape and area. It is widely used in technical fields such as mechanics, acoustics, optics, electronics, measurement, infrared, security alarm, medical care, military, transportation, information engineering, office automation, ocean development, geological exploration and other technical fields.

聚偏氟乙烯形成的壓電薄膜具有厚度薄、質量輕、非常柔軟以及可以在無電源下工作等優點,因此廣泛應用於醫用感測器等器件。聚偏氟乙烯形成的壓電薄膜作為一種動態應變感測器,非常適合應用於人體皮膚表面或植入人體內部進行生理狀態監測,例如監測呼吸及心跳。The piezoelectric film formed of polyvinylidene fluoride has the advantages of thin thickness, light weight, very softness, and can work without power supply, so it is widely used in medical sensors and other devices. As a dynamic strain sensor, the piezoelectric film formed of polyvinylidene fluoride is very suitable for application on the surface of human skin or implanted inside the human body for physiological status monitoring, such as monitoring breathing and heartbeat.

聚偏氟乙烯為多晶型聚合物,可以通過使用添加劑等不同方法來得到不同晶相的聚偏氟乙烯薄膜。其晶相主要包括α晶相、β晶相及γ晶相。α晶相的聚偏氟乙烯具有高熱力學穩定性,其晶格中TGTG'的分子鏈構象導致其分子鏈偶極子極性相反而不顯極性。β晶相的聚偏氟乙烯為正交晶系的全反式構象TTT,具有自發極性,壓電性能優異。γ晶相的聚偏氟乙烯的分子構象為TTTGTTTG',同一晶胞內兩條分子鏈平行排列,由於偶極距方向相同而具有極性。圖1、圖2及圖3分別顯示α晶相、β晶相及γ晶相的聚偏氟乙烯的分子結構,其中C為碳(Carbon)原子,F為氟(Fluorine)原子,H為氫(Hydrogen)原子。Polyvinylidene fluoride is a polycrystalline polymer, and polyvinylidene fluoride films with different crystal phases can be obtained by using different methods such as additives. Its crystal phases mainly include α crystal phase, β crystal phase and γ crystal phase. Polyvinylidene fluoride in the alpha crystal phase has high thermodynamic stability, and the molecular chain conformation of TGTG' in its crystal lattice causes its molecular chain dipoles to be opposite in polarity without showing polarity. Polyvinylidene fluoride in the β crystal phase is an orthorhombic all-trans conformation TTT, which has spontaneous polarity and excellent piezoelectric properties. The molecular conformation of polyvinylidene fluoride in the γ crystal phase is TTTGTTTG'. The two molecular chains in the same unit cell are arranged in parallel and have polarity due to the same dipole moment direction. Figure 1, Figure 2 and Figure 3 respectively show the molecular structure of polyvinylidene fluoride in the α crystal phase, β crystal phase and γ crystal phase, in which C is a carbon atom, F is a fluorine atom and H is hydrogen. (Hydrogen) atoms.

聚偏氟乙烯的β晶相與γ晶相具有較高的自發極化強度,是聚偏氟乙烯的重要晶相結構。β晶相與γ晶相的聚偏氟乙烯具有優異的鐵電性、熱釋電性和壓電性能。The β crystal phase and γ crystal phase of polyvinylidene fluoride have high spontaneous polarization intensity and are important crystal phase structures of polyvinylidene fluoride. Polyvinylidene fluoride in the β crystal phase and γ crystal phase has excellent ferroelectricity, pyroelectricity and piezoelectric properties.

近年來,聚偏氟乙烯薄膜也開始應用在穿戴式裝置上。然而,目前的聚偏氟乙烯薄膜只應用其某一種晶相,功能單一,因此在空間受限的穿戴式裝置上的應用受到限制。為此,本發明提出一種多晶相聚偏氟乙烯薄膜以同時提供多種功能。In recent years, polyvinylidene fluoride films have also begun to be used in wearable devices. However, current polyvinylidene fluoride films only use one of its crystal phases and have a single function, so their application in wearable devices with limited space is limited. To this end, the present invention proposes a polycrystalline polyvinylidene fluoride film to provide multiple functions at the same time.

本發明的目的之一,在於提出一種多晶相的聚偏氟乙烯薄膜的製作方法。One of the objects of the present invention is to provide a method for producing a polycrystalline polyvinylidene fluoride film.

本發明的目的之一,在於提出一種使用多晶相聚偏乙烯薄膜的穿戴式裝置。One object of the present invention is to provide a wearable device using a polycrystalline polyvinylidene film.

根據本發明,一種多晶相聚偏氟乙烯薄膜的製作方法包括:將一聚偏氟乙烯溶液塗佈於一基板上以形成膜狀,並加熱該基板上的該聚偏氟乙烯溶液至其熔點以上,以產生一第一聚偏氟乙烯薄膜;冷卻該第一聚偏氟乙烯薄膜,以得到半熔融狀態、過冷態且具有α晶相的第二聚偏氟乙烯薄膜;利用靜電紡絲製備具有β晶相的多條聚偏氟乙烯纖維;將該多條聚偏氟乙烯纖維平行排列在該第二聚偏氟乙烯薄膜上,以得到第三聚偏氟乙烯薄膜;以一固定溫度對該第三聚偏氟乙烯薄膜進行加熱退火,以使α相晶體相變為γ相晶體,最終得到具有β晶相及γ晶相的該多晶相聚偏氟乙烯薄膜。According to the present invention, a method for making a polycrystalline polyvinylidene fluoride film includes: coating a polyvinylidene fluoride solution on a substrate to form a film, and heating the polyvinylidene fluoride solution on the substrate to its melting point Above, to produce a first polyvinylidene fluoride film; cooling the first polyvinylidene fluoride film to obtain a second polyvinylidene fluoride film in a semi-molten state, a supercooled state and having an α crystal phase; using electrospinning Preparing a plurality of polyvinylidene fluoride fibers with a β crystal phase; arranging the plurality of polyvinylidene fluoride fibers in parallel on the second polyvinylidene fluoride film to obtain a third polyvinylidene fluoride film; at a fixed temperature The third polyvinylidene fluoride film is heated and annealed to change the α phase crystal to the γ phase crystal, and finally obtain the polycrystalline phase polyvinylidene fluoride film having the β crystal phase and the γ crystal phase.

在一實施例中,可以將一聚偏氟乙烯材料溶於一溶劑中以配製出該聚偏氟乙烯材料溶液,其中該溶劑可以是但不限於二甲基甲醯胺(DMF)。In one embodiment, a polyvinylidene fluoride material can be dissolved in a solvent to prepare the polyvinylidene fluoride material solution, where the solvent can be but is not limited to dimethylformamide (DMF).

在一實施例中,產生該第一聚偏氟乙烯薄膜的步驟包括將該基板上的該聚偏氟乙烯溶液加熱至熔點(如200℃)以上以產生該第一聚偏氟乙烯薄膜。In one embodiment, the step of producing the first polyvinylidene fluoride film includes heating the polyvinylidene fluoride solution on the substrate to above the melting point (eg, 200° C.) to produce the first polyvinylidene fluoride film.

在一實施例中,該固定溫度可為160℃。In one embodiment, the fixed temperature may be 160°C.

在一實施例中,產生該多條聚偏氟乙烯纖維的步驟包括對聚偏氟乙烯材料進行靜電紡絲,以產生該多條聚偏氟乙烯纖維。In one embodiment, the step of producing the plurality of polyvinylidene fluoride fibers includes electrospinning a polyvinylidene fluoride material to produce the plurality of polyvinylidene fluoride fibers.

根據本發明,一種穿戴式裝置包括一多晶相聚偏氟乙烯薄膜、一開關裝置以及一處理器。該多晶相聚偏氟乙烯薄膜具有β晶相及γ晶相。該多晶相聚偏氟乙烯薄膜可以感測溫度及壓力產生一溫度感測信號及一壓力感測信號。該處理器耦接該多晶相聚偏氟乙烯薄膜及該開關裝置,根據該溫度感測信號控制該開關裝置以啟動或關閉該穿戴式裝置,以及根據該壓力感測信號產生一電信號。According to the present invention, a wearable device includes a polycrystalline polyvinylidene fluoride film, a switch device and a processor. The polycrystalline polyvinylidene fluoride film has a β crystal phase and a γ crystal phase. The polycrystalline polyvinylidene fluoride film can sense temperature and pressure to generate a temperature sensing signal and a pressure sensing signal. The processor is coupled to the polycrystalline polyvinylidene fluoride film and the switch device, controls the switch device to turn on or off the wearable device according to the temperature sensing signal, and generates an electrical signal according to the pressure sensing signal.

在一實施例中,該多晶相聚偏氟乙烯薄膜感測到人體溫度時,該處理器根據該溫度感測信號啟動該穿戴式裝置。In one embodiment, when the polycrystalline polyvinylidene fluoride film senses human body temperature, the processor activates the wearable device according to the temperature sensing signal.

在一實施例中,該多晶相聚偏氟乙烯薄膜未感測到人體溫度時,該處理器根據該溫度感測信號關閉該穿戴式裝置。In one embodiment, when the polycrystalline polyvinylidene fluoride film does not sense human body temperature, the processor turns off the wearable device according to the temperature sensing signal.

在一實施例中,該電信號用以判斷生理狀態或產生相關資訊。In one embodiment, the electrical signal is used to determine physiological status or generate relevant information.

在一實施例中,該生理狀態包括心跳、血壓或呼吸。In one embodiment, the physiological state includes heartbeat, blood pressure, or respiration.

在一實施例中,該相關資訊包括壓力、重量或距離。In one embodiment, the relevant information includes pressure, weight or distance.

為了使本發明內容的敘述更加詳盡與完備,下文針對了本發明的實施態樣與具體實施例提出了說明性的描述,但這並非實施或運用本發明具體實施例的唯一形式。本發明可以藉由多種不同形式實現,不應解釋為僅局限於這裡所闡述的實施例。提供這些實施例是為了使本發明更為全面和完整的公開,並使本領域的技術人員更充分地瞭解本發明的範圍。In order to make the description of the present invention more detailed and complete, the following provides an illustrative description of the implementation modes and specific embodiments of the present invention, but this is not the only form of implementing or using the specific embodiments of the present invention. The present invention may be implemented in many different forms and should not be construed as limited to the embodiments set forth herein. These embodiments are provided so that this disclosure will be thorough and complete, and will enable those skilled in the art to fully understand the scope of the invention.

本文中提到的數值或範圍,除非另有明確陳述,不然的話這些數值或範圍是近似的。Numerical values or ranges mentioned herein are approximate unless otherwise expressly stated.

這裡所用的專有名詞僅用於描述特定的實施例而並非意圖限定本發明。如這裡所用的,單數形式 「一」、「一個」和「該」也意圖涵蓋複數形式,除非上下文清楚指明是其它情況。還應該理解,當在說明書中使用術語「包含」、「包括」時,指明了所述特徵、整體、步驟、操作、元件及/或部件的存在,但不排除一個或多個其它特徵、整體、步驟、操作、元件及/或部件的存在。The terminology used herein is used only to describe specific embodiments and is not intended to limit the invention. As used herein, the singular forms "a", "an" and "the" are intended to cover the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that when the terms "comprising" and "include" are used in the specification, the presence of the stated features, integers, steps, operations, elements and/or parts is specified but does not exclude one or more other features, integers. , steps, operations, components and/or parts.

除非另外定義,這裡所使用的所有術語(包括技術和科學術語)具有與本發明所述領域的並通技術人員所通常理解的含義相同的含義。還應當理解,比如在通用的辭典中所定義的那些術語,應解釋為具有與它們在相關領域的環境中的含義相一致的含義,而不應以過度理想化或過度正式的含義來解釋,除非在本文中明確地定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It is further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meaning in the context of the relevant field and should not be interpreted in an overly idealized or overly formal sense, Unless explicitly defined herein.

在本文中,詳細敘述許多特定細節以使讀者能夠充分理解以下的實施例。然而,可在無此等特定細節之情況下實踐本發明之實施例。在其他情下,為簡化圖式,熟知的結構與裝置僅示意性地繪示於圖中。In this document, numerous specific details are set forth in detail to enable the reader to fully understand the following embodiments. However, embodiments of the invention may be practiced without these specific details. In other instances, well-known structures and devices are shown schematically in the drawings for the purpose of simplifying the drawings.

在各實施例中,一個特徵、元件或電路形成於另一個特徵、元件或電路上、連接至及/或耦接至另一特徵、元件或電路,可包括這些特徵、元件或電路連接接觸的實施方式,亦可包括有另一特徵、元件或電路可成並中介於這些特徵、元件或電路之間,使得這些特徵、元件或電路可不直接接觸的實施方式。In various embodiments, one feature, element, or circuit is formed on, connected to, and/or coupled to another feature, element, or circuit, and may include connecting contacts of these features, elements, or circuits. Embodiments may also include embodiments in which another feature, component, or circuit may be incorporated between the features, components, or circuits such that the features, components, or circuits may not be in direct contact.

圖4顯示本發明製作多晶相聚偏氟乙烯薄膜的流程。在圖4的步驟S10中,配製一聚偏氟乙烯溶液,並將聚偏氟乙烯溶液塗佈在一基板上以形成膜狀,接著將基板上的聚偏氟乙烯溶液加熱至其熔點以上,以使該聚偏氟乙烯溶液平整成為一第一聚偏氟乙烯薄膜。在步驟S10所產生的第一聚偏氟乙烯薄膜為一半熔體薄膜。對該聚偏氟乙烯溶液進行加熱,除了可以產生該第一聚偏氟乙烯薄膜之外,還可以消除該聚偏氟乙烯溶液中聚偏氟乙烯材料的熱歷史,使得後續結晶時不受之前的生成條件的影響。其中熱歷史包括聚偏氟乙烯材料在成型出廠前受到的溫度、剪切及拉伸等影響。在一實施例中,可以將基板上的聚偏氟乙烯溶液加熱至約200℃以得到該第一聚偏氟乙烯薄膜。在一實施例中,該聚偏氟乙烯溶液的配製步驟包括將一聚偏氟乙烯材料溶於相應溶劑中以得到該聚偏氟乙烯溶液,其中該溶劑包括但不限於二甲基甲醯胺(DMF)。Figure 4 shows the process for producing a polycrystalline polyvinylidene fluoride film according to the present invention. In step S10 of Figure 4, a polyvinylidene fluoride solution is prepared, and the polyvinylidene fluoride solution is coated on a substrate to form a film, and then the polyvinylidene fluoride solution on the substrate is heated to above its melting point. To smooth the polyvinylidene fluoride solution into a first polyvinylidene fluoride film. The first polyvinylidene fluoride film produced in step S10 is a half melt film. Heating the polyvinylidene fluoride solution, in addition to producing the first polyvinylidene fluoride film, can also eliminate the thermal history of the polyvinylidene fluoride material in the polyvinylidene fluoride solution, so that subsequent crystallization is not affected by the previous The influence of the generation conditions. The thermal history includes the effects of temperature, shearing and stretching on the polyvinylidene fluoride material before it is molded and shipped from the factory. In one embodiment, the polyvinylidene fluoride solution on the substrate can be heated to about 200° C. to obtain the first polyvinylidene fluoride film. In one embodiment, the step of preparing the polyvinylidene fluoride solution includes dissolving a polyvinylidene fluoride material in a corresponding solvent to obtain the polyvinylidene fluoride solution, wherein the solvent includes but is not limited to dimethylformamide. (DMF).

在步驟S10完成產生該第一聚偏氟乙烯薄膜後,進行圖4的步驟S12。在步驟S12中,讓該第一聚偏氟乙烯薄膜進行冷卻以形成半熔融態的第二聚偏氟乙烯薄膜。該第二聚偏氟乙烯薄膜具有α晶相。在一實施例中,該第一聚偏氟乙烯薄膜會從約為200℃的溫度冷卻至約為160℃的溫度以得到該第二聚偏氟乙烯薄膜。步驟S12的冷卻方式包括但不限於自然冷卻。After the first polyvinylidene fluoride film is produced in step S10, step S12 of FIG. 4 is performed. In step S12, the first polyvinylidene fluoride film is cooled to form a second polyvinylidene fluoride film in a semi-molten state. The second polyvinylidene fluoride film has an α crystal phase. In one embodiment, the first polyvinylidene fluoride film is cooled from a temperature of about 200°C to a temperature of about 160°C to obtain the second polyvinylidene fluoride film. The cooling method in step S12 includes but is not limited to natural cooling.

在圖4的步驟S14中,將一聚偏氟乙烯材料放置到一靜電紡絲設備中進行靜電紡絲,以產生具有β晶相的多條聚偏氟乙烯纖維。在靜電紡絲過程中,該聚偏氟乙烯材料將被熔融以消除該聚偏氟乙烯材料的熱歷史,以避免對後續的結晶造成影響。靜電紡絲為透過高電場來製備纖維的一項技術,透過靜電紡絲所製成的聚偏氟乙烯纖維的β晶相較穩定且容易製備,主要是因為靜電紡絲給予聚偏氟乙烯材料電極化時會同時進行拉伸固化。靜電紡絲為常見的技術,因此其具體操作及原理於此不再贅述。在圖4的實施例中,使用靜電紡絲方式來產生具有β晶相的多條聚偏氟乙烯纖維,但本發明不限於此,其他可以產生具有β晶相的聚偏氟乙烯纖維的方式也適用於本發明。In step S14 of FIG. 4 , a polyvinylidene fluoride material is placed into an electrospinning device for electrospinning to produce a plurality of polyvinylidene fluoride fibers with a β crystal phase. During the electrospinning process, the polyvinylidene fluoride material will be melted to eliminate the thermal history of the polyvinylidene fluoride material to avoid affecting subsequent crystallization. Electrospinning is a technology for preparing fibers through high electric fields. The β crystal phase of polyvinylidene fluoride fibers produced by electrospinning is relatively stable and easy to prepare, mainly because electrospinning gives polyvinylidene fluoride materials Stretch curing occurs simultaneously with electropolarization. Electrospinning is a common technology, so its specific operations and principles will not be described again here. In the embodiment of FIG. 4 , electrospinning is used to produce multiple polyvinylidene fluoride fibers with β crystalline phase. However, the present invention is not limited to this. Other methods can be used to produce polyvinylidene fluoride fibers with β crystalline phase. Also applicable to the present invention.

在圖4的實施例中,步驟S10和步驟S14可以同時進行,或是其中一個步驟完成後再進行另一個。例如先進行步驟S10及S12後再進行步驟S14,或者先進行步驟S14後再進行步驟S10及S12。In the embodiment of FIG. 4 , step S10 and step S14 may be performed simultaneously, or one step may be completed before the other. For example, steps S10 and S12 are performed first and then step S14 is performed, or step S14 is performed first and then steps S10 and S12 are performed.

在圖4的實施例中,步驟S10中使用的聚偏氟乙烯溶液中的聚偏氟乙烯材料與步驟S14中使用的聚偏氟乙烯材料可以相同,也可以不同。In the embodiment of FIG. 4 , the polyvinylidene fluoride material in the polyvinylidene fluoride solution used in step S10 and the polyvinylidene fluoride material used in step S14 may be the same or different.

在得到該第二聚偏氟乙烯薄膜以及該多條聚偏氟乙烯纖維後進行步驟S16。在步驟S16中,將該第二聚偏氟乙烯薄膜放置於一收集台上,並將該多條聚偏氟乙烯纖維平行排列在該第二聚偏氟乙烯薄膜上,以得到具有α晶相及β晶相的第三聚偏氟乙烯薄膜。在一實施例中,該收集台可以是靜電紡絲收集臺。Step S16 is performed after obtaining the second polyvinylidene fluoride film and the plurality of polyvinylidene fluoride fibers. In step S16, the second polyvinylidene fluoride film is placed on a collection platform, and the plurality of polyvinylidene fluoride fibers are arranged in parallel on the second polyvinylidene fluoride film to obtain an α crystal phase. And the third polyvinylidene fluoride film with β crystal phase. In one embodiment, the collection station may be an electrospinning collection station.

在一實施例中,當步驟S10完成以得到該第一聚偏氟乙烯薄膜後,可以將該第一聚偏氟乙烯薄膜轉移至該收集台上,在此轉移過程中,該第一聚偏氟乙烯薄膜有足夠時間自然冷卻以形成半熔融態的該第二聚偏氟乙烯薄膜。In one embodiment, after step S10 is completed to obtain the first polyvinylidene fluoride film, the first polyvinylidene fluoride film can be transferred to the collection stage. During this transfer process, the first polyvinylidene fluoride film The vinyl fluoride film has sufficient time to naturally cool to form the second polyvinylidene fluoride film in a semi-molten state.

在得到該第三聚偏氟乙烯薄膜後,進行步驟S18。在圖4的步驟S18中,將該第三聚偏氟乙烯薄膜放置在加熱台上,並以一固定溫度對該第三聚偏氟乙烯薄膜進行加熱退火。在步驟S18的加熱退火過程中,由於第三聚偏氟乙烯薄膜具有β晶相的聚偏氟乙烯纖維,因此第三聚偏氟乙烯薄膜中的α相晶體將相變為γ相晶體,進而產生具有β晶相及γ晶相的多晶相聚偏氟乙烯薄膜。在一實施例中,步驟S18使用的固定溫度約為160℃,而持續加熱時間約為48小時。After obtaining the third polyvinylidene fluoride film, step S18 is performed. In step S18 of FIG. 4 , the third polyvinylidene fluoride film is placed on the heating stage, and the third polyvinylidene fluoride film is heated and annealed at a fixed temperature. During the heating annealing process in step S18, since the third polyvinylidene fluoride film has polyvinylidene fluoride fibers in the β crystal phase, the α phase crystals in the third polyvinylidene fluoride film will change phase into γ phase crystals, and then A polycrystalline polyvinylidene fluoride film having a β crystal phase and a γ crystal phase is produced. In one embodiment, the fixed temperature used in step S18 is about 160°C, and the continuous heating time is about 48 hours.

本發明的多晶相聚偏氟乙烯薄膜同時具有β晶相及γ晶相,由於β晶相及γ晶相的排佈呈90℃夾角,因此多晶相聚偏氟乙烯薄膜在不同方向(如d31及d33)都具有良好的壓電效應。換言之,當本發明的多晶相聚偏氟乙烯薄膜應用在環狀穿戴式裝置時,可以感測各個不同方向的壓力或張力。此外,由於β晶相及γ晶相都具有熱釋電效應,因此本發明的多晶相聚偏氟乙烯薄膜也可以達成溫度的感測。在穿戴式裝置中,多晶相聚偏氟乙烯薄膜的溫度感測功能可以用來感測人體溫度,當多晶相聚偏氟乙烯薄膜感測到體溫或感測到的溫度高於一預設值時,穿戴式裝置將被啟動。相反的,當多晶相聚偏氟乙烯薄膜未感測到體溫或感測到的溫度低於一預設值時,穿戴式裝置將被關閉。此自動啟動及關閉穿戴式裝置的功能,可以避免使用者忘記關閉穿戴式裝置,導致電力浪費,而且還可以延長穿戴式裝置的使用壽命。The polycrystalline polyvinylidene fluoride film of the present invention has both a β crystal phase and a γ crystal phase. Since the β crystal phase and the γ crystal phase are arranged at an included angle of 90°C, the polycrystalline phase polyvinylidene fluoride film can move in different directions (such as d31 and d33) all have good piezoelectric effects. In other words, when the polycrystalline polyvinylidene fluoride film of the present invention is applied to a ring-shaped wearable device, pressure or tension in various directions can be sensed. In addition, since both the β crystal phase and the γ crystal phase have pyroelectric effects, the polycrystalline polyvinylidene fluoride film of the present invention can also achieve temperature sensing. In wearable devices, the temperature sensing function of the polycrystalline polyvinylidene fluoride film can be used to sense human body temperature. When the polycrystalline polyvinylidene fluoride film senses body temperature or the sensed temperature is higher than a preset value , the wearable device will be activated. On the contrary, when the polycrystalline polyvinylidene fluoride film does not sense body temperature or the sensed temperature is lower than a preset value, the wearable device will be turned off. This function of automatically turning on and off the wearable device can prevent users from forgetting to turn off the wearable device, resulting in a waste of power, and can also extend the service life of the wearable device.

圖5顯示使用本發明多晶相聚偏氟乙烯薄膜12的穿戴式裝置10。在圖5的實施例中,穿戴式裝置10包括多晶相聚偏氟乙烯薄膜12、處理器14及開關裝置16。多晶相聚偏氟乙烯薄膜12同時具有β晶相及γ晶相。處理器14連接多晶相聚偏氟乙烯薄膜12及開關裝置16。開關裝置16是用以控制穿戴式裝置10的啟動及關閉。穿戴式裝置10可以是但不限於脈搏感測器。Figure 5 shows a wearable device 10 using the polycrystalline polyvinylidene fluoride film 12 of the present invention. In the embodiment of FIG. 5 , the wearable device 10 includes a polycrystalline polyvinylidene fluoride film 12 , a processor 14 and a switching device 16 . The polycrystalline polyvinylidene fluoride film 12 has both a β crystal phase and a γ crystal phase. The processor 14 connects the polycrystalline polyvinylidene fluoride film 12 and the switching device 16 . The switch device 16 is used to control the startup and shutdown of the wearable device 10 . The wearable device 10 may be, but is not limited to, a pulse sensor.

圖5的處理器14可以是利用硬體、韌體及/或軟體的機器,並且實體上適於透過布林邏輯(或稱布爾邏輯)在形成特定的實體電路的複數個邏輯閘上操作以執行藉由可執行的機器指令所定義的特定的任務。處理器可以利用機械,氣動,液壓,電,磁,光,資訊,化工,與/或生物學原理,機制,適應,信號,輸入,與/或輸出以執行任務。處理器可以是通用的裝置,如微控制器及/或微處理器。在某些實施方式,處理器可以是專門用途的裝置,如特定應用積體電路(ASIC)或現場可程式閘列(FPGA)。The processor 14 of FIG. 5 may be a machine using hardware, firmware and/or software, and is physically adapted to operate on a plurality of logic gates forming a specific physical circuit through Boolean logic. Perform specific tasks defined by executable machine instructions. The processor may utilize mechanical, pneumatic, hydraulic, electrical, magnetic, optical, information, chemical, and/or biological principles, mechanisms, adaptations, signals, inputs, and/or outputs to perform tasks. The processor may be a general-purpose device, such as a microcontroller and/or a microprocessor. In some embodiments, the processor may be a special purpose device, such as an application specific integrated circuit (ASIC) or a field programmable gate array (FPGA).

圖5的開關裝置16為一種打開/關閉電路用以切斷或導通電流路徑。在一實施例中,開關裝置16可以是但不限於由一個電晶體所形成的開關。The switching device 16 of Figure 5 is an opening/closing circuit for cutting off or conducting a current path. In one embodiment, the switching device 16 may be, but is not limited to, a switch formed by a transistor.

圖6顯示圖5的穿戴式裝置10的操作的第一實施例。如圖6的步驟S20及S22所示,當使用者將穿戴式裝置10配戴在手腕上時,穿戴式裝置10的多晶相聚偏氟乙烯薄膜12感測到使用者的體溫,多晶相聚偏氟乙烯薄膜12因而輸出一溫度感測信號至處理器14。處理器14在接收到來自多晶相聚偏氟乙烯薄膜12的溫度感測信號後,處理器14會控制開關裝置16來啟動穿戴式裝置10,如圖6的步驟S24所示。當使用者將穿戴式裝置10取下時,穿戴式裝置10的多晶相聚偏氟乙烯薄膜12無法感測到使用者的體溫,因此多晶相聚偏氟乙烯薄膜12停止輸出溫度感測信號至處理器14,如圖6的步驟S26及S28所示。在多晶相聚偏氟乙烯薄膜12停止輸出溫度感測信號後,處理器14會控制開關裝置16來關閉穿戴式裝置10,如圖6的步驟S29所示。Figure 6 shows a first embodiment of the operation of the wearable device 10 of Figure 5 . As shown in steps S20 and S22 of FIG. 6 , when the user wears the wearable device 10 on the wrist, the polycrystalline polyvinylidene fluoride film 12 of the wearable device 10 senses the user's body temperature, and the polycrystalline phase polymerizes The vinylidene fluoride film 12 thus outputs a temperature sensing signal to the processor 14 . After the processor 14 receives the temperature sensing signal from the polycrystalline polyvinylidene fluoride film 12 , the processor 14 controls the switch device 16 to start the wearable device 10 , as shown in step S24 of FIG. 6 . When the user takes off the wearable device 10 , the polycrystalline polyvinylidene fluoride film 12 of the wearable device 10 cannot sense the user's body temperature, so the polycrystalline polyvinylidene fluoride film 12 stops outputting the temperature sensing signal to The processor 14 is shown in steps S26 and S28 of FIG. 6 . After the polycrystalline polyvinylidene fluoride film 12 stops outputting the temperature sensing signal, the processor 14 controls the switch device 16 to turn off the wearable device 10 , as shown in step S29 of FIG. 6 .

圖7顯示圖5的穿戴式裝置10的操作的第二實施例。當使用者將穿戴式裝置10配戴在手腕上時,穿戴式裝置10的多晶相聚偏氟乙烯薄膜12可以感測到手腕上的壓力或張力,如圖7的步驟S30所示。手腕上的壓力或張力是來自於脈搏的跳動或手臂的擺動。依據感測到的壓力或張力,多晶相聚偏氟乙烯薄膜12產生一壓力感測信號給處理器14。處理器14依據壓力感測信號決定一電信號,如步驟S32所示。穿戴式裝置10依據該電信號判斷使用者的生理狀態或產生相關資訊。最後穿戴式裝置10可以將得到的生理狀態或相關資訊反饋給使用者,如步驟S34所示。反饋給使用者的方式包括但不限於將生理狀態或相關資訊顯示在一顯示器上,其中該顯示器可以設置在穿戴式裝置10上或外接。依據穿戴式裝置10的類型,穿戴式裝置10得到的生理狀態會不同,例如當穿戴式裝置10為脈搏感測器時,生理狀態可以是使用者的心跳或血壓。當穿戴式裝置10為呼吸感測器時,生理狀態可以是使用者的呼吸。同樣的,依據穿戴式裝置10的類型不同,穿戴式裝置10得到的相關資訊可以是但不限於壓力、重量或距離。Figure 7 shows a second embodiment of the operation of the wearable device 10 of Figure 5 . When the user wears the wearable device 10 on the wrist, the polycrystalline polyvinylidene fluoride film 12 of the wearable device 10 can sense the pressure or tension on the wrist, as shown in step S30 of FIG. 7 . Pressure or tension on the wrist comes from the beating of the pulse or the swing of the arm. Based on the sensed pressure or tension, the polycrystalline polyvinylidene fluoride film 12 generates a pressure sensing signal to the processor 14 . The processor 14 determines an electrical signal according to the pressure sensing signal, as shown in step S32. The wearable device 10 determines the user's physiological state or generates relevant information based on the electrical signal. Finally, the wearable device 10 can feed back the obtained physiological state or related information to the user, as shown in step S34. Methods of feedback to the user include but are not limited to displaying physiological status or related information on a display, where the display can be provided on the wearable device 10 or externally connected. Depending on the type of the wearable device 10 , the physiological state obtained by the wearable device 10 will be different. For example, when the wearable device 10 is a pulse sensor, the physiological state may be the user's heartbeat or blood pressure. When the wearable device 10 is a breathing sensor, the physiological state may be the user's breathing. Similarly, depending on the type of the wearable device 10 , the relevant information obtained by the wearable device 10 may be but is not limited to pressure, weight or distance.

以上所述僅是本發明的實施例而已,並非對本發明做任何形式上的限制,雖然本發明已以實施例揭露如上,然而並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明技術方案的範圍內,當可利用上述揭示的技術內容作出些許更動或修飾為等同變化的等效實施例,但凡是未脫離本發明技術方案的內容,依據本發明的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾,均仍屬於本發明技術方案的範圍內。The above are only embodiments of the present invention, and do not limit the present invention in any form. Although the present invention has been disclosed in the embodiments above, they are not used to limit the present invention. Anyone with ordinary knowledge in the technical field, Without departing from the scope of the technical solution of the present invention, the technical content disclosed above can be used to make some changes or modifications to equivalent embodiments with equivalent changes. Any simple modifications, equivalent changes and modifications made to the above embodiments still fall within the scope of the technical solution of the present invention.

10:穿戴式裝置 12:多晶相聚偏氟乙烯薄膜 14:處理器 16:開關裝置 S10:步驟 S12:步驟 S14:步驟 S16:步驟 S18:步驟 S20:步驟 S22:步驟 S24:步驟 S26:步驟 S28:步驟 S29:步驟 S30:步驟 S32:步驟 S34:步驟 C:碳原子 F:氟原子 H:氫原子 10: Wearable devices 12: Polycrystalline polyvinylidene fluoride film 14: Processor 16: Switching device S10: Steps S12: Steps S14: Steps S16: Steps S18: Steps S20: Steps S22: Steps S24: Steps S26: Steps S28: Steps S29: Steps S30: Steps S32: Steps S34: Steps C: carbon atom F: fluorine atom H: Hydrogen atom

圖1顯示α晶相的聚偏氟乙烯的分子結構。 圖2顯示β晶相的聚偏氟乙烯的分子結構。 圖3顯示γ晶相的聚偏氟乙烯的分子結構。 圖4顯示本發明製作多晶相聚偏氟乙烯薄膜的流程。 圖5顯示使用本發明多晶相聚偏氟乙烯薄膜的穿戴式裝置。 圖6顯示圖5的穿戴式裝置的操作的第一實施例。 圖7顯示圖5的穿戴式裝置的操作的第二實施例。 Figure 1 shows the molecular structure of polyvinylidene fluoride in the alpha crystal phase. Figure 2 shows the molecular structure of polyvinylidene fluoride in the β crystal phase. Figure 3 shows the molecular structure of polyvinylidene fluoride in the gamma crystal phase. Figure 4 shows the process for producing a polycrystalline polyvinylidene fluoride film according to the present invention. Figure 5 shows a wearable device using the polycrystalline polyvinylidene fluoride film of the present invention. Figure 6 shows a first embodiment of the operation of the wearable device of Figure 5. Figure 7 shows a second embodiment of the operation of the wearable device of Figure 5.

S10:步驟 S10: Steps

S12:步驟 S12: Steps

S14:步驟 S14: Steps

S16:步驟 S16: Steps

S18:步驟 S18: Steps

Claims (11)

一種多晶相聚偏氟乙烯薄膜的製作方法,包括下列步驟: 將一聚偏氟乙烯溶液塗佈於一基板上以形成膜狀,並加熱該基板上的該聚偏氟乙烯溶液至其熔點以上,以產生一第一聚偏氟乙烯薄膜; 冷卻該第一聚偏氟乙烯薄膜,以得到半熔融狀態、過冷態且具有α晶相的第二聚偏氟乙烯薄膜; 產生具有β晶相的多條聚偏氟乙烯纖維; 將該多條聚偏氟乙烯纖維平行排列在該第二聚偏氟乙烯薄膜上,以得到具有α晶相及β晶相的第三聚偏氟乙烯薄膜;以及 以一固定溫度對該第三聚偏氟乙烯薄膜進行加熱退火,以產生具有β晶相及γ晶相的該多晶相聚偏氟乙烯薄膜。 A method for making a polycrystalline polyvinylidene fluoride film, including the following steps: Coating a polyvinylidene fluoride solution on a substrate to form a film, and heating the polyvinylidene fluoride solution on the substrate to above its melting point to produce a first polyvinylidene fluoride film; Cooling the first polyvinylidene fluoride film to obtain a second polyvinylidene fluoride film in a semi-molten state, a supercooled state and having an α crystal phase; Produce multiple polyvinylidene fluoride fibers with β crystalline phase; Arranging the plurality of polyvinylidene fluoride fibers in parallel on the second polyvinylidene fluoride film to obtain a third polyvinylidene fluoride film having an α crystal phase and a β crystal phase; and The third polyvinylidene fluoride film is heated and annealed at a fixed temperature to produce the polycrystalline polyvinylidene fluoride film having a β crystal phase and a γ crystal phase. 如請求項1所述的製作方法,更包括將一聚偏氟乙烯材料溶於一溶劑中以配製出該聚偏氟乙烯溶液。The manufacturing method as described in claim 1 further includes dissolving a polyvinylidene fluoride material in a solvent to prepare the polyvinylidene fluoride solution. 如請求項1所述的製作方法,其中產生該第一聚偏氟乙烯薄膜的步驟包括將該基板上的該聚偏氟乙烯溶液加熱至200℃以產生該第一聚偏氟乙烯薄膜。The production method of claim 1, wherein the step of producing the first polyvinylidene fluoride film includes heating the polyvinylidene fluoride solution on the substrate to 200° C. to produce the first polyvinylidene fluoride film. 如請求項1所述的製作方法,其中該固定溫度為160℃。The production method as described in claim 1, wherein the fixed temperature is 160°C. 如請求項1所述的製作方法,其中產生該多條聚偏氟乙烯纖維的步驟包括對一聚偏氟乙烯材料進行靜電紡絲,以產生該多條聚偏氟乙烯纖維。The production method of claim 1, wherein the step of producing the plurality of polyvinylidene fluoride fibers includes electrospinning a polyvinylidene fluoride material to produce the plurality of polyvinylidene fluoride fibers. 一種穿戴式裝置,包括: 一多晶相聚偏氟乙烯薄膜,具有β晶相及γ晶相,該多晶相聚偏氟乙烯薄膜感測溫度及壓力產生一溫度感測信號及一壓力感測信號; 一開關裝置;以及 一處理器,耦接該多晶相聚偏氟乙烯薄膜及該開關裝置,根據該溫度感測信號控制該開關裝置以啟動或關閉該穿戴式裝置,以及根據該壓力感測信號產生一電信號。 A wearable device including: A polycrystalline polyvinylidene fluoride film has a beta crystal phase and a gamma crystal phase. The polycrystalline polyvinylidene fluoride film senses temperature and pressure to generate a temperature sensing signal and a pressure sensing signal; a switching device; and A processor is coupled to the polycrystalline polyvinylidene fluoride film and the switch device, controls the switch device to activate or deactivate the wearable device according to the temperature sensing signal, and generates an electrical signal according to the pressure sensing signal. 如請求項6所述的穿戴式裝置,其中該多晶相聚偏氟乙烯薄膜感測到人體溫度時,該處理器根據該溫度感測信號啟動該穿戴式裝置。The wearable device of claim 6, wherein when the polycrystalline polyvinylidene fluoride film senses human body temperature, the processor activates the wearable device according to the temperature sensing signal. 如請求項6所述的穿戴式裝置,其中該多晶相聚偏氟乙烯薄膜未感測到人體溫度時,該處理器根據該溫度感測信號關閉該穿戴式裝置。The wearable device of claim 6, wherein when the polycrystalline polyvinylidene fluoride film does not sense human body temperature, the processor turns off the wearable device according to the temperature sensing signal. 如請求項6所述的穿戴式裝置,其中該電信號用以判斷生理狀態或產生相關資訊。The wearable device of claim 6, wherein the electrical signal is used to determine physiological status or generate relevant information. 如請求項9所述的穿戴式裝置,其中該生理狀態包括心跳、血壓或呼吸。The wearable device of claim 9, wherein the physiological state includes heartbeat, blood pressure or respiration. 如請求項9所述的穿戴式裝置,其中該相關資訊包括壓力、重量或距離。The wearable device of claim 9, wherein the relevant information includes pressure, weight or distance.
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