TW202345208A - Substrate processing device and substrate processing method - Google Patents

Abstract

A heat processing device according to one aspect of the invention has a heating plate which performs a heat treatment by supporting and heating a substrate on which a film has been formed, a chamber which covers the substrate supported by the heating plate, a gas discharge section which comprises a head section in which a plurality of discharge openings are scattered along the surface facing the substrate supported by the heating plate and which discharges a gas toward the surface of the substrate from the plurality of discharge openings, an outer peripheral exhaust section which exhausts the processing space inside the chamber from a peripheral region outward of the periphery of the substrate supported by the heating plate, and a control section. The control section controls the outer peripheral exhaust section so as to increase the amount exhausted by the outer peripheral exhaust section while the substrate is being heated.

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method.

Patent Document 1 discloses a substrate processing apparatus that includes a heating unit that heats a coating film formed on a substrate. The heating unit described in Patent Document 1 includes: a heating unit provided in a processing container for heating a substrate; a pipe for supplying gas into the unit from the outer peripheral side of the substrate; and an exhaust pipe from near the center of the substrate. The exhaust from the unit is carried out above. [Known technical documents] [Patent Document]

Patent Document 1: Japanese Patent Application Publication No. 2018-56182

[Problems to be solved by this invention]

The present invention provides a technology that can suppress substrate defects generated during heat treatment. [Technical means to solve problems]

A substrate processing apparatus according to one aspect of the present invention includes: a hot plate that performs heat treatment and supports and heats a substrate on which a coating film is formed; a chamber that covers the substrate supported by the hot plate; and a gas ejection unit that includes A nozzle head is formed with a plurality of ejection holes dispersedly arranged along the surface facing the substrate supported by the hot plate, and ejects gas from the plurality of ejection holes to the surface of the substrate; The outer peripheral area of the edge of the substrate supported by the plate exhausts the processing space in the chamber; and a control part; the control part controls the peripheral exhaust part so that in a state of heating the substrate, The amount of exhaust gas from the outer peripheral exhaust portion is increased. [Effects of the present invention]

According to the present invention, a technology that can suppress substrate defects generated during heat treatment is provided.

[Exemplary embodiment] Hereinafter, an embodiment will be described with reference to the drawings. In the description, the same elements or elements with the same function are given the same symbols, and repeated explanations are omitted.

Referring to FIGS. 1 to 5 , a substrate processing system according to an embodiment will be described. The substrate processing system 1 shown in FIG. 1 is a system that performs formation of a photosensitive coating on a substrate, exposure of the photosensitive coating, and development of the photosensitive coating. The substrate to be processed is, for example, a semiconductor workpiece W. The photosensitive coating film is, for example, a photoresist film. The substrate processing system 1 includes a coating and developing device 2 and an exposure device 3 . The exposure device 3 is a device that exposes the photoresist film (photosensitive coating film) formed on the workpiece W (substrate). Specifically, the exposure device 3 irradiates energy rays to the exposure target portion of the photoresist film by a method such as liquid immersion exposure. The coating and developing device 2 performs a process of applying a photoresist (chemical solution) to the surface of the workpiece W on which the underlying film is formed before the exposure process by the exposure device 3 to form a photoresist film; after the exposure process, the coating and developing device 2 performs a photoresist process. Development treatment of resist film.

[Substrate processing equipment] Hereinafter, the structure of the coating and developing device 2 will be described as an example of a substrate processing device. As shown in FIGS. 1 and 2 , the coating and developing device 2 includes a carrier block 4 , a processing block 5 , an interface block 6 , and a control device 100 (control unit).

The carrier block 4 carries out the introduction of the workpiece W into the coating and developing device 2 and the removal of the workpiece W from the coating and developing device 2 . For example, the carrier block 4 can support a plurality of carriers C for the workpiece W, and has a built-in transfer device A1 including a transfer arm. The carrier C stores, for example, a plurality of circular workpieces W. The conveying device A1 takes out the workpiece W from the carrier C and conveys it to the processing block 5, receives the workpiece W from the processing block 5, and returns it to the carrier C. The processing block 5 is provided with a plurality of processing modules 11, 12, 13, and 14.

The processing module 11 has a coating unit U1, a heat treatment unit U2, and a transport device A3 for transporting the workpiece W in these units. The processing module 11 forms an underlying film on the surface of the workpiece W through the coating unit U1 and the heat treatment unit U2. The coating unit U1 applies the treatment liquid for forming the lower layer film on the workpiece W. The heat treatment unit U2 performs various heat treatments accompanying the formation of the lower layer film. That is, the heat treatment unit U2 performs heat treatment on the workpiece W on which the coating film of the treatment liquid is formed. Thereby, an underlying film is formed on the surface of the workpiece W. Specific examples of the lower layer film include a so-called hard cover such as a spin-coated carbon (SOC) film. When the workpiece W on which the coating film is formed is heated during the heat treatment, sublimates (unnecessary products) are generated from the coating film. Therefore, the heat treatment unit U2 is provided with an exhaust portion for discharging the sublimated matter.

The processing module 12 has a built-in coating unit U3, a heat treatment unit U4, and a transport device A3 for transporting the workpiece W in these units. The processing module 12 forms a photoresist film on the lower film through the coating unit U3 and the heat treatment unit U4. The coating unit U3 applies a treatment liquid for photoresist film formation on the lower film. The heat treatment unit U4 performs various heat treatments accompanying the formation of the coating film.

The processing module 13 has a built-in coating unit U5, a heat treatment unit U6, and a transport device A3 for transporting the workpiece W in these units. The processing module 13 forms an upper layer film on the photoresist film through the coating unit U5 and the heat treatment unit U6. The coating unit U5 applies a liquid for forming an upper layer film on the photoresist film. The heat treatment unit U6 performs various heat treatments accompanying the formation of the upper layer film.

The processing module 14 has a built-in developing unit U7, a heat treatment unit U8, and a transport device A3 for transporting the workpiece W in these units. The processing module 14 uses the developing unit U7 and the heat treatment unit U8 to perform development processing on the exposed photoresist film and heat treatment accompanying the development processing. The developing unit U7 applies the developer solution on the surface of the exposed workpiece W, and then washes it away with the rinse solution, thereby performing the development process of the photoresist film. The heat treatment unit U8 performs various heat treatments accompanying the development process. Specific examples of the heat treatment include heat treatment before development (PEB: Post Exposure Bake), heat treatment after development (PB: Post Bake), and the like.

A scaffolding unit U10 is provided on the side of the carrier block 4 in the processing block 5 . The scaffolding unit U10 is divided into a plurality of small units arranged side by side in the up and down direction. A transport device A7 including a lifting arm is provided near the scaffolding unit U10. The conveying device A7 raises and lowers the workpiece W between the small units of the rack unit U10.

A scaffolding unit U11 is provided on the interface block 6 side in the processing block 5 . The scaffolding unit U11 is divided into a plurality of small units arranged side by side in the up and down direction.

The interface block 6 transfers the workpiece W between the exposure device 3 and the workpiece W. For example, the interface block 6 is connected to the exposure device 3 and has a built-in transport device A8 including a transfer arm. The conveying device A8 conveys the workpiece W arranged in the rack unit U11 to the exposure device 3 . The conveyance device A8 receives the workpiece W from the exposure device 3 and returns it to the rack unit U11.

In addition, the specific structure of the substrate processing apparatus is not limited to the structure of the coating and developing device 2 illustrated above. The substrate processing device may be any device as long as it has a heat treatment unit that performs heat treatment of a coating film such as an underlayer film, and a control device that can control the heat treatment unit.

(heat treatment unit) Next, an example of the heat treatment unit U2 of the treatment module 11 will be described in detail with reference to FIGS. 3 and 4 . As shown in FIG. 3 , the heat treatment unit U2 includes a housing 90 , a heating unit 20 , a chamber 30 , and an outer peripheral exhaust unit 60 . The housing 90 accommodates at least the heating unit 20 and the chamber 30 . In this case, the chamber 30 is arranged in the storage space V formed by the housing 90 . In addition, in Figure 3, except for some elements, the hatching indicating the cross section is omitted.

The chamber 30 includes an upper chamber 31 and a lower chamber 32 . The upper chamber 31 is located on the upper side, and the lower chamber 32 is located on the lower side. In addition, the lower chamber 32 accommodates the heating unit 20 inside.

The heating unit 20 supports the workpiece W and heats it. The heating unit 20 includes, for example, a hot plate 22 and a hot plate heater 24. The hot plate 22 supports the workpiece W to be heat treated, and transfers heat to the supported workpiece W. The hot plate heater 24 increases the temperature of the hot plate 22. As an example, the temperature of the hot plate 22 is maintained at approximately 300° to 500° during the heat treatment. The hot plate heater 24 is, for example, provided in the hot plate 22 . The hot plate 22 is formed in a substantially disk shape, as an example. The diameter of the hot plate 22 can also be larger than the diameter of the workpiece W. The hot plate 22 has a placement surface 22a and supports the workpiece W in a state where the workpiece W is placed at a predetermined position on the placement surface 22a. The hot plate 22 may also be made of metal such as aluminum, silver, or copper with high thermal conductivity. Above the mounting surface 22a of the hot plate 22, a processing space S for performing heat treatment of the workpiece W is formed.

The hot plate 22 is provided with a plurality of adsorption holes 22b for adsorbing the workpiece W, for example. Each adsorption hole 22b is formed to penetrate the hot plate 22 in the thickness direction.

In addition, each adsorption hole 22b is connected to the relay hole 41a of the relay member 41. Each relay hole 41a is connected to the exhaust line 27 for performing exhaust gas for adsorption.

The adsorption hole 22b and the relay hole 41a are connected via the metal member 42 and the resin spacer 43. Specifically, the adsorption hole 22b and the relay hole 41a are connected through the flow path in the metal member 42 and the flow path in the resin gasket 43.

The metal member 42 is located on the adsorption hole 22b side, and the resin gasket 43 is located on the relay hole 41a side. One end of the metal member 42 is directly connected to the hot plate 22 (specifically, the adsorption hole 22b), and the other end is directly connected to one end of the corresponding resin gasket 43. In other words, each resin pad 43 communicates with the corresponding adsorption hole 22b and is connected to the hot plate 22 via the metal member 42. In addition, the other end of the resin gasket 43 is directly connected to the relay member 41 (specifically, the relay hole 41a).

The metal member 42 has a large diameter portion 42a on the resin gasket 43 side. The inside of the large-diameter portion 42a is provided with a flow path space 42b with a larger cross-sectional area than the connection portion (upper end) of the metal member 42 with the hot plate 22, thereby reducing the risk of clogging caused by sublimation produced during heat treatment. In addition, by the flow path space 42b having a large cross-sectional area, the heat of the gas sucked from the processing space S when adsorbing the workpiece W is relaxed, and the gas flows to the exhaust line 27 for adsorption. That is, the risk of deterioration due to high temperature reaching the equipment constituting the exhaust flow path to the resin gasket 43 and the exhaust line 27 can be suppressed.

In addition, in the lower chamber 32, below the hot plate 22, for example, three lifting pins (not shown) are provided to support the workpiece W from below to lift it up and down. The lifting pin is raised and lowered by a lifting mechanism (not shown) equipped with a driving source such as a motor. The lifting mechanism is controlled by the control device 100 . In addition, a through hole (not shown) through which the above-mentioned lifting pin passes is formed in the center of the hot plate 22 . The lifting pin can protrude from the top surface of the hot plate through the through hole.

The lower chamber 32 that accommodates the heating unit 20 holds the hot plate 22 of the heating unit 20 in a predetermined position. The lower chamber 32 includes, for example, a supporting bottom wall 321 and a peripheral wall portion 322. The support bottom wall 321 is formed in a disc shape having a diameter approximately the same as that of the hot plate 22 . The peripheral wall portion 322 is formed to extend upward from the outer edge of the supporting bottom wall 321 . The peripheral wall portion 322 is formed in an annular shape and extends to the same height as the mounting surface 22 a of the hot plate 22 . The peripheral wall portion 322 surrounds the hot plate 22 . For example, the inner peripheral surface of the peripheral wall portion 322 faces the outer peripheral surface of the hot plate 22 . A gap may also be formed between the inner peripheral surface of the peripheral wall portion 322 and the outer peripheral surface of the hot plate 22 .

The hot plate 22 of the heating part 20 is supported by, for example, the supporting bottom wall 321 of the lower chamber 32 . Specifically, the hot plate 22 is supported by the supporting bottom wall 321 of the lower chamber 32 via the supporting portion 330 . The support part 330 includes, for example, a support column 331 whose upper end is connected to the hot plate 22 , an annular member 332 that supports the support column 331 , and a foot member 333 that supports the annular member 332 on the bottom wall of the lower chamber 32 .

The annular member 332 is made of metal, and is provided with a gap equal to the height of the support column 331 across most of the back surface of the hot plate 22 . By arranging the resin gasket 43 below the thus arranged annular member 332, the annular member 332 effectively blocks the heat from the hot plate 22, making the resin gasket 43 less likely to be exposed to high temperatures (harder heat). deterioration).

In addition, an inlet 323 is provided in the peripheral wall portion 322 of the lower chamber 32 . The inlet 323 functions as a gas supply portion that introduces gas into the chamber 30 from outside the chamber 30 .

The upper chamber 31 is formed in a disc shape, for example. When forming the processing space S, the upper chamber 31 is disposed with a gap g provided between the upper chamber 31 and the lower chamber 32 so as to cover the workpiece W on the heating unit 20 from above. The upper chamber 31 includes, for example, a ceiling 311 and side walls 312 .

The upper chamber 31 includes a gas ejection part 50 . The gas injection unit 50 injects gas from above to the workpiece W on the hot plate 22 in the processing space S in the chamber 30 . The gas ejection part 50 ejects gas to substantially the entire surface of the workpiece W, for example. The type of gas ejected by the gas ejection part 50 is not limited. For example, air, gas with an adjusted moisture content, or inert gas (nitrogen) may also be used. The gas injection unit 50 is connected to a gas supply source via a supply path 56 . The gas ejection part 50 may also include a nozzle head 52 provided on the top plate 311. The nozzle head 52 is formed with: a gas distribution space provided on the underside of the top plate 311; and a plurality of ejection holes 54 provided on the bottom surface facing the workpiece W on the hot plate 22, penetrating between the gas distribution space and the processing space S. . The gas distribution space is a space that connects the plurality of ejection holes 54 and the supply path 56 .

FIG. 4 is a schematic diagram of the upper chamber 31 illustrated in FIG. 3 viewed from below. As shown in FIG. 4 , a plurality of ejection holes 54 are scattered along the bottom surface of the top plate 311 . The plurality of ejection holes 54 are scattered at a substantially uniform density in, for example, the portion (opposing portion) of the hot plate 22 on the bottom surface of the top plate 311 that faces the workpiece W. In addition, when viewed from above, the ejection hole 54 may also be provided outside the opposing portion (outside the edge of the workpiece W). A plurality of ejection holes 54 are dispersedly arranged in the opposing portions. When gas such as air is ejected from the gas ejection part 50 , a plurality of ejection holes 54 may be scattered so that the ejection amount per unit time becomes approximately uniform over the entire surface of the workpiece W.

The opening areas of the plurality of nozzle holes 54 may be approximately the same as each other. When the opening areas of the plurality of ejection holes 54 are approximately the same, the plurality of ejection holes 54 may be scattered so that the ratio of the opening areas of the ejection holes 54 per unit area of the opposing portions becomes uniform. The shape of the ejection hole 54 may be circular or elliptical when viewed from the up and down direction. It is also possible to scatter a plurality of ejection holes 54 so that the intervals between adjacent ejection holes 54 are approximately the same. As an example, as shown in FIG. 4 , when a plurality of ejection holes 54 are two-dimensionally arranged in the transverse direction and the longitudinal direction, the spacing between adjacent ejection holes 54 in the transverse direction can be made uniform, and the spacing between adjacent ejection holes 54 in the longitudinal direction can be made uniform. The holes 54 are evenly spaced from each other. The distance between adjacent ejection holes 54 in the lateral direction and the distance between adjacent ejection holes 54 in the longitudinal direction can also be made approximately the same.

The side wall 312 is formed to extend downward from the outer edge of the top plate 311 . The side wall 312 is formed in an annular shape and surrounds the placement surface 22a. FIG. 3 shows an example of the arrangement of the upper chamber 31 when forming the processing space S. In this arrangement, the lower end surface 312a of the side wall 312 and the upper end surface of the peripheral wall portion 322 of the lower chamber 32 face each other in a close state. . Specifically, a gap g is formed between the lower end surface 312 a of the side wall 312 and the upper end surface of the peripheral wall portion 322 , and this gap g connects the processing space S with the space outside the chamber 30 .

The inner peripheral surface 312b of the side wall 312 may be inclined in the up-down direction such that the distance in the horizontal direction from the center of the top plate 311 becomes smaller as it approaches the top plate 311 from the lower end of the side wall 312. In this case, the inner diameter of the side wall 312 becomes smaller as it approaches the top plate 311 from the lower end of the side wall 312 .

The upper chamber 31 further includes an outer peripheral exhaust portion 60 . The outer peripheral exhaust part 60 exhausts the gas in the processing space S from the outer peripheral area outside the edge of the workpiece W supported by the heating part 20 . The outer peripheral exhaust part 60 includes a plurality of first exhaust holes 61 and a plurality of second exhaust holes 62 provided outside the nozzle head 52 of the gas injection part 50 .

The plurality of first exhaust holes 61 are provided in the side wall 312 of the upper chamber 31, and each opens on the inclined inner peripheral surface 312b of the side wall 312. As shown in FIG. 4 , the plurality of first exhaust holes 61 may also be arranged in an annular shape outside the top plate 311 . In addition, the plurality of first exhaust holes 61 may be provided in the top plate 311 and each may be opened at the outer peripheral portion of the bottom surface of the top plate 311 .

The plurality of second exhaust holes 62 are provided in the side wall 312 of the upper chamber 31, and each opens in the lower end surface 312a of the side wall 312. The plurality of second exhaust holes 62 are opened in the gap g between the upper chamber 31 (side wall 312) and the lower chamber 32 (peripheral wall portion 322) when the chamber 30 is in the closed state. The plurality of second exhaust holes 62 may be arranged annularly outside the plurality of first exhaust holes 61 . The height position of the second exhaust hole 62 is lower than the height position of the first exhaust hole 61 .

The first exhaust hole 61 and the second exhaust hole 62 are connected to the exhaust pump via the exhaust duct 65 . The exhaust duct 65 may be formed so that the exhaust flow paths respectively connected to the plurality of first exhaust holes 61 and the exhaust flow paths respectively connected to the plurality of second exhaust holes 62 are integrated in the upper chamber 31 For a flow path. In addition, the exhaust duct 65 may be provided with a valve 67 for controlling the exhaust state. The exhaust volume from the first exhaust hole 61 and the second exhaust hole 62 can also be controlled by controlling the opening and closing of the valve 67 with the control device 100 . The valve 67 is, for example, a solenoid valve.

The outer peripheral exhaust part 60 having the above-mentioned structure exhausts the gas in the processing space S through the second exhaust hole 62 opened in the gap g and the gap g, and exhausts the gas in the processing space S through the first exhaust hole 61. . In addition, the outer peripheral exhaust part 60 does not need to have the plurality of first exhaust holes 61, and the gas in the processing space S can be exhausted through the second exhaust hole 62 and the gap g.

The chamber drive unit 38 moves the upper chamber 31 in the up and down direction. The chamber drive unit 38 lowers the upper chamber 31 until the side wall 312 of the upper chamber 31 approaches the peripheral wall portion 322 , thereby forming the processing space S by the chamber 30 (the chamber 30 is in a closed state). The upper chamber 31 is raised by the chamber driving part 38, so that the side wall 312 of the upper chamber 31 is separated from the peripheral wall part 322, thereby opening the space on the hot plate 22 to the space outside the chamber 30 (the chamber 30 becomes open state).

In the chamber 30 , in addition to supplying gas from the nozzle head 52 of the gas ejection part 50 to the processing space S, external gas is also introduced through the inlet 323 provided in the lower chamber 32 . The gas introduced from the inlet 323 can rise outside the hot plate 22 and move toward the processing space S.

In addition, the processing space S is defined as the space above the hot plate 22 in the chamber 30 and the space inside the side wall 312 . On the other hand, the space below the hot plate 22 is defined as the buffer space B. The buffer space B is defined as a space below the hot plate 22 and above the annular member 332 . In addition, the buffer space B is connected to the flow path of the gas introduced into the processing space S. At this time, the buffer space B is made larger in volume than the processing space S.

The heat treatment unit U2 may further be equipped with a cooling plate having the function of cooling the workpiece W. At this time, the cooling plate can also move back and forth between the cooling position outside the chamber 30 and the loading and unloading position of at least a part of the workpiece W arranged in the chamber 30 . Alternatively, the cooling plate may be fixed at a position parallel to the hot plate 22 in the horizontal direction; the heat treatment unit U2 may also have a transfer arm that moves and transfers the workpiece W between the cooling plate and the hot plate 22 .

(control device) The control device 100 controls each part of the coating and developing device 2 including the heat treatment unit U2. The control device 100 is configured to perform the following steps: a heating step, in which the workpiece W covered by the chamber 30 is supported on the heating unit 20 and heated; and a gas injection step, in which the workpiece W supported on the heating unit 20 is heated from a plurality of injection holes. 54. Spraying gas onto the surface of the workpiece W; an exhausting step to exhaust the processing space S from a peripheral area further outside the edge; and a spraying amount and exhausting amount control step.

As shown in FIG. 2 , the control device 100 includes a memory unit 102 and a control unit 104 as functional components. The memory unit 102 stores a program for operating each unit of the coating and developing device 2 including the heat treatment unit U2. The memory unit 102 also stores various data (for example, information on an instruction signal for operating the heat treatment unit U2) and information from sensors provided in each unit. The memory unit 102 is, for example, a semiconductor memory, an optical disk, a magnetic disk, or a magneto-optical disk. The program may be included in an external memory device that is a different device from the memory unit 102, or in an invisible medium that transmits signals or the like. The program can also be installed into the memory unit 102 from other media, and the program can be stored in the memory unit 102 . The control unit 104 controls the operations of each unit of the coating and developing device 2 based on the program read from the memory unit 102 .

The control device 100 is composed of one or a plurality of control computers. For example, the control device 100 includes the circuit 110 shown in FIG. 5 . The circuit 110 includes one or a plurality of processors 112, a memory 114, a storage 116, a timer 122, and an input/output port 118. The storage 116 includes, for example, a recording medium such as a hard disk that can be read by a computer. The recording medium stores a program for causing the control device 100 to execute a substrate processing program including a heat treatment program described later. The recording medium can also be removable media such as non-volatile semiconductor memory, magnetic disks, and optical disks. The memory 114 temporarily stores programs loaded from the recording medium of the storage 116 and calculation results generated by the processor 112 . The processor 112 cooperates with the memory 114 to execute the above program, thereby forming each of the above functional modules. The timer 122, for example, calculates a reference pulse wave of a certain period to measure the elapsed time. The input/output port 118 performs input/output of electrical signals with the heat treatment unit U2 according to instructions from the processor 112 .

In addition, the hardware structure of the control device 100 is not limited to the fact that each functional module must be composed of a program. For example, each functional module of the control device 100 can also be composed of a dedicated logic circuit or an integrated ASIC (Application Specific Integrated Circuit).

[Substrate processing program] FIG. 6 is a flowchart showing an example of a substrate processing procedure including coating and development processing. The control device 100 controls, for example, the coating and developing device 2 so as to perform coating and developing processing on one workpiece W through the following procedure. First, the control unit 104 of the control device 100 controls the transport device A1 to transport the workpiece W in the carrier C to the shelf unit U10, and controls the transport device A7 to place the workpiece W in the small unit for the processing module 11.

Next, the control unit 104 controls the transport device A3 to transport the workpiece W in the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 11 . In addition, the control unit 104 controls the coating unit U1 and the heat treatment unit U2 to form an underlying film on the surface of the workpiece W (step S01 ). The heat treatment accompanying the formation of the lower layer film (hereinafter referred to as the "heat treatment process") performed in step S01 will be described later. Then, the control unit 104 controls the transfer device A3 so that the workpiece W on which the lower layer film is formed returns to the rack unit U10 , and controls the transfer device A7 so that the workpiece W is placed in the small unit for the processing module 12 .

Next, the control unit 104 controls the transport device A3 to transport the workpiece W in the shelf unit U10 to the coating unit U3 and the heat treatment unit U4 in the processing module 12 . In addition, the control unit 104 controls the coating unit U3 and the heat treatment unit U4 to form a photoresist film on the underlying film of the workpiece W (step S02 ). Then, the control unit 104 controls the transfer device A3 to return the workpiece W to the rack unit U10 and controls the transfer device A7 to place the workpiece W in the small unit for the processing module 13 .

Next, the control unit 104 controls the transport device A3 to transport the workpiece W of the shelf unit U10 to each unit in the processing module 13 . In addition, the control unit 104 controls the coating unit U5 and the heat treatment unit U6 to form an upper layer film on the photoresist film of the workpiece W (step S03 ). Then, the control device 100 controls the transport device A3 to transport the workpiece W to the shelf unit U11.

Next, the control unit 104 controls the transport device A8 to send the workpiece W stored in the rack unit U11 to the exposure device 3 . Thereafter, in the exposure device 3, the coating film formed on the workpiece W is exposed (step S04). Then, the control unit 104 controls the transport device A8 to receive the overexposed workpiece W from the exposure device 3 and arrange the workpiece W in the small unit for the processing module 14 in the rack unit U11.

Next, the control unit 104 controls the transport device A3 to transport the workpiece W in the shelf unit U11 to the heat treatment unit U8 in the processing module 14 . Thereafter, the control device 100 controls the heat treatment unit U8 to perform heat treatment on the coating film of the workpiece W before development (step S05 ). Next, the control unit 104 controls the developing unit U7 and the heat treatment unit U8 so that the coating film of the workpiece W that has been heat-treated by the heat treatment unit U8 is subjected to a development process and a heat treatment after the development process (steps S06 and S07). Then, the control unit 104 controls the conveying device A3 so that the workpiece W returns to the rack unit U10, and controls the conveying device A7 and the conveying device A1 so that the workpiece W returns to the carrier C. In the above manner, the substrate processing including coating and development processing is completed. The control unit 104 may also repeat the processing of steps S01 to S07 for other workpieces W (subsequent workpieces W).

(heat treatment procedure) FIG. 7 is a flowchart showing an example of the heat treatment process performed in the heat treatment unit U2. The flowchart illustrated in FIG. 7 shows the procedure of sequentially performing heat treatment on one workpiece W in the heat treatment unit U2. In addition, the hot plate 22 is assumed to be maintained at a predetermined temperature.

In addition, FIGS. 8( a ) to 8 ( c ) illustrate the flow of gas in the chamber 30 during the heat treatment process. Furthermore, FIG. 9 illustrates the relationship between the gas ejection amount from the gas ejection part 50 of the chamber 30, the gas exhaust amount from the outer peripheral exhaust part 60, and the temperature of the workpiece W in the heat treatment process.

First, the control unit 104 controls the heat treatment unit U2 so that the workpiece W, which is a processing target on which a coating film of the processing liquid is formed, is loaded into the chamber 30 (step S11).

For example, the control unit 104 controls the chamber drive unit 38 so as to switch the closed state in which the processing space S is formed in the chamber 30 to the open state in which the upper chamber 31 is separated from the lower chamber 32 . Furthermore, the control unit 104 controls the heat treatment unit U2 so that the cooling plate on which the workpiece W, which is the processing target, is placed, is inserted between the hot plate 22 and the upper chamber 31 (disposed in the unloading and unloading position). Thereafter, the control unit 104 raises the support pin so that the support pin receives the workpiece W on the cooling plate arranged above the hot plate 22 . Thereby, the workpiece W to be processed is loaded into the chamber 30 . Then, the control unit 104 lowers the support pin supporting the workpiece W to lower the workpiece W so that the workpiece W is placed on the placement surface 22 a of the hot plate 22 . Furthermore, the chamber driving part 38 is controlled to lower the upper chamber 31, whereby the chamber 30 is in a closed state, and the processing space S is formed on the workpiece W.

Next, the control unit 104 controls the heat treatment unit U2 so that both the exhaust volume of the outer peripheral exhaust unit 60 (outer peripheral exhaust gas) and the gas injection volume (gas supply) from the gas injection unit 50 become a "weak" state (step S12). For example, the control unit 104 switches the on-off valve provided in the supply path 56 from a closed state to an open state, thereby supplying gas from the gas supply source into the gas distribution space of the nozzle head 52 . Thereby, gas is ejected from the plurality of ejection holes 54 formed in the nozzle head 52 . In addition, the control unit 104 can adjust the opening and closing valve to a predetermined opening, so that the gas injection amount can be brought into a "weak" state. Similarly, for the outer peripheral exhaust portion 60, the gas injection amount can be brought into a "weak" state by adjusting the valve 67 to a predetermined opening.

In addition, the adjustment of the exhaust gas from the outer peripheral exhaust part 60 and the air supply from the gas injection part 50, for example, the adjustment of the exhaust volume of the outer peripheral exhaust part 60, may be performed before the workpiece W is loaded.

The heat treatment is started in a state where gas is ejected from the gas ejection part 50 and exhaust is performed from the outer peripheral exhaust part 60 . At this time, the gas ejected from the gas ejection part 50 and the gas entering the processing space S from the gap formed between the peripheral wall part 322 of the lower chamber 32 and the hot plate 22 are exhausted from the outer peripheral exhaust part 60 .

Fig. 8(a) is a diagram illustrating the flow of air supply and exhaust to the processing space S. As shown in FIG. 8( a ), the gas flow F1 supplied from the gas ejection part 50 to the entire top surface of the workpiece W is made weak, and the gas flow F2 discharged from the outer periphery of the workpiece W is made weak. As a result, a gentle flow of gas toward the outer peripheral side is formed on the surface of the workpiece W.

Next, the control unit 104 starts heating the workpiece W and then waits until the first predetermined period elapses (step S13 ). The first predetermined period is a period stored in the memory unit 102 and corresponds to the period from time 0 to time t1 shown in FIG. 9 . The first predetermined period is set to an extent that the coating film on the workpiece W is cured at a predetermined level. As an example, the first predetermined period may be set based on the time t1 after reaching the temperature at which the solvent in the coating film on the workpiece W evaporates. In addition, for example, the time t1 can also be set based on the cured state of the coating film on the workpiece W, for example, the time sequence when the surface state reaches a predetermined state is time t1. As an example, time t1 can be set in a time zone of 1/5 to 1/3 of the heat treatment time of the workpiece W (between time 0 and time t3 shown in FIG. 9 ). Time t1 can also be determined by repeatedly performing an experiment using a test workpiece that is identical to the workpiece W.

In FIG. 9 , a line L1 represents the exhaust gas amount (outer peripheral exhaust gas) of the outer peripheral exhaust unit 60 , and a line L2 represents the gas injection amount (gas supply) from the gas injection unit 50 . Furthermore, FIG. 9 illustrates the temperature change of the workpiece W during processing. As shown in FIG. 9 , between time 0 and time t1 (initial stage), the temperature of the workpiece W placed on the hot plate is increased. At this stage, as the temperature of the workpiece W rises, the coating film gradually solidifies slowly. At this time, sublimates derived from cross-linking reactions of components in the coating film are gradually generated and may scatter in the processing space S. In particular, the time zone Tc shown in FIG. 9 is a time zone before the surface of the coating film is sufficiently cured, and a large amount of sublimation products derived from cross-linking reactions and the like are produced.

While the control unit 104 waits until the first predetermined period elapses, both the exhaust volume of the outer peripheral exhaust unit 60 (outer peripheral exhaust gas) and the gas injection volume (air supply) from the gas injection unit 50 continue to be "weak". state. During this period, in the early stage from the start of heating of the workpiece W, the solidification (formation) of the coating on the workpiece W progresses. As described above, by placing both the air supply and the exhaust gas in a weak state, the influence of the air flow caused by the air supply and exhaust gas on the formation of the coating film can be suppressed.

After the first predetermined period has elapsed, the control unit 104 controls the heat treatment unit U2 so that the exhaust volume (outer peripheral exhaust) of the outer peripheral exhaust unit 60 becomes a "strong" state (step S14). For example, the control unit 104 can adjust the opening of the valve 67 of the outer peripheral exhaust unit 60 to increase the gas injection amount to a "strong" state. In addition, the gas ejection amount (gas supply) from the gas ejection part 50 continues to maintain the "weak" state.

At this time, as shown in FIG. 8( b ), the flow F1 of the gas supplied from the gas ejection part 50 to the entire top surface of the workpiece W is weak, and the flow F2 of the gas discharged from the outer periphery of the workpiece W is strong. As a result, a flow of gas toward the outer peripheral side is still formed on the surface of the workpiece W, and this flow becomes larger. Therefore, the gas above the workpiece W goes to the outer peripheral side and is exhausted outside the processing space S.

In this state, the control unit 104 waits until the second predetermined period elapses (step S15). The second predetermined period is a period stored in the memory unit 102 and corresponds to the period from time t1 to time t2 shown in FIG. 9 . The second predetermined period is set to an extent where the curing of the coating film on the workpiece W further progresses and the entire coating is stably cured. As an example, the second predetermined period may be set based on time t2 when the temperature of the workpiece W becomes within ±1° C. of the set temperature that is the target of the heat treatment. In addition, for example, the time t2 can also be set based on the curing state of the coating on the workpiece W, for example, the time sequence when the surface state is cured to a certain extent and the thickness of the coating is stable is the time t2. As an example, time t2 can be set in a time zone of 1/3 to 3/4 of the heat treatment time for the workpiece W (between time 0 and time t3 shown in FIG. 9 ). Time t2 can also be determined by repeating the experiment using a test workpiece identical to the workpiece W.

As shown in FIG. 9 , between time t1 and time t2 (mid-term), the temperature of the workpiece W placed on the hot plate gradually becomes stable. During this period, the solidification (formation) of the coating film on the workpiece W also progresses, and the coating film becomes a more stable state. At this stage, the amount of sublimation produced from the coating of the workpiece W gradually decreases, but the sublimation may continue to be produced until the coating is completely cured. Therefore, the sublimated substance may remain in the processing space S to a certain extent.

In this regard, while the control unit 104 waits until the second predetermined period has elapsed, the exhaust volume (outer peripheral exhaust) of the outer peripheral exhaust unit 60 continues to be "strong", and the gas injection amount from the gas injection unit 50 is ( air supply) is in a "weak" state. Thereby, the sublimates and the like from the coating film remaining above the workpiece W are discharged out of the chamber 30 . In particular, by adjusting the exhaust gas amount on the outer peripheral side to a large amount, the discharge of sublimated matter generated in and after the time zone Tc shown in FIG. 9 is promoted.

After the second predetermined period has elapsed, the control unit 104 controls the heat treatment unit U2 so that the gas ejection amount (gas supply) from the gas ejection unit 50 becomes a "strong" state (step S16). For example, the control unit 104 can adjust the opening of the on-off valve provided in the supply path 56 to increase the supply amount of gas (the injection amount from the gas injection unit) to a "strong" state. As a result, both the exhaust volume of the outer peripheral exhaust unit 60 (outer peripheral exhaust gas) and the gas injection amount (gas supply) from the gas injection unit 50 become "strong" states.

At this time, as shown in FIG. 8( c ), the gas flow F1 of the gas supplied from the gas ejection part 50 to the entire top surface of the workpiece W and the gas flow F2 of the gas discharged from the outer periphery of the workpiece W become strong. As a result, the flow of gas toward the outer peripheral side on the surface of the workpiece W becomes larger.

In this state, the control unit 104 waits until the third predetermined period elapses (step S17). The third predetermined period is a period stored in the memory unit 102 and corresponds to the period from time t2 to time t3 shown in FIG. 9 . The third predetermined period is set to a level where the curing of the coating film on the workpiece W is almost completed. As an example, the third predetermined period may be set based on the time t3 when the predetermined period has elapsed since the temperature of the workpiece W became within ±1°C of the set temperature that is the target of the heat treatment. In addition, for example, the time t3 may be set so that the coating film on the workpiece W can be completely cured as time t3. Time t3 can also be determined by repeating the experiment using a test workpiece that is identical to the workpiece W.

As shown in FIG. 9 , between time t2 and time t3 (late period), the temperature of the workpiece W placed on the hot plate is in a very stable state. During this period, the entire coating of the workpiece W is solidified. At this stage, the amount of sublimation produced from the coating of the workpiece W decreases, and new sublimation is not supplied to the processing space S.

While the control unit 104 waits until the third predetermined period elapses, the exhaust volume (outer peripheral exhaust) of the outer peripheral exhaust unit 60 and the gas injection amount (air supply) from the gas injection unit 50 continue to be "strong". condition. Therefore, the gas supplied from above the workpiece W into the processing space S by the gas ejection part 50 has a larger flow than the gas that moves above the workpiece W and is discharged from the outer circumferential side, and sublimates and the like remaining above the workpiece W are more likely to be ejected. Riding on this air flow, it is discharged out of the chamber 30 .

After the third predetermined period has elapsed, the control unit 104 performs an unloading operation of the workpiece W (step S18). Specifically, the control unit 104 controls the chamber driving unit 38 to switch from a closed state in which the chamber 30 is close to the hot plate 22 to an open state in which the upper chamber 31 and the hot plate 22 are separated, so that the processing space S is opposite to the chamber 30 Open outside. In this way, after the workpiece W is brought close to the top plate 311 of the upper chamber 31 (more specifically, after the state of being close to the top plate 311 is continued), the control unit 104 switches the state from the off state to the off state by the chamber driving unit 38 . open state. In this state, the control unit 104 operates the support pin to lift the workpiece W, and controls the cooling plate and the like to move the workpiece W out of the chamber 30 . As a result, the workpiece W is transferred from between the chamber 30 and the hot plate 22 to the cooling plate inserted into the chamber 30 , and the workpiece W is moved out of the chamber 30 . In the above manner, a series of heat treatments for one workpiece W is completed.

In addition, after unloading the workpiece W and before loading the next workpiece W, the control unit 104 determines the exhaust gas amount of the outer peripheral exhaust unit 60 (outer peripheral exhaust gas) and the gas injection amount from the gas injection unit 50 (supply gas supply). Qi) switches to "weak" state. This is to suppress the air flow disturbance in the processing space S when the next workpiece W is loaded.

While the workpiece W, which is the processing target, is replaced, by switching the exhaust volume (outer peripheral exhaust) of the outer peripheral exhaust unit 60 and the gas injection amount (gas supply) from the gas injection unit 50 to the "weak" state, This prevents the uncured coating film from being affected by the air flow when the next workpiece W is brought in.

[effect] The coating and developing device 2 of the above embodiment includes a heat treatment unit U2 that performs heat treatment on a workpiece W on which a coating film is formed, and a control device 100 that controls the heat treatment unit U2. The heat treatment unit U2 includes: a heating unit 20 including a hot plate 22 that supports and heats the workpiece W; a chamber 30 that covers the workpiece W supported by the heating unit 20; and a gas ejection unit 50 that includes a heating unit and a heating unit. The nozzle part 52 of the plurality of ejection holes 54 dispersedly arranged facing the workpiece W supported by 20 ejects gas from the plurality of ejection holes 54 to the surface of the workpiece W; and the outer peripheral exhaust part 60 ejects gas from the relatively heated part 20 The peripheral area further outside the edge of the supported workpiece W exhausts the processing space S in the chamber 30 . At this time, the control device 100 controls the outer peripheral exhaust portion 60 so as to increase the amount of exhaust gas from the outer peripheral exhaust portion 60 while the workpiece W is being heated.

In addition, the substrate treatment process of the above-mentioned embodiment includes the step of subjecting the workpiece W on which the coating film is formed to heat treatment. The step of performing heat treatment on the workpiece W includes a heating step in which the workpiece W covered by the chamber 30 is supported on the hot plate 22 of the heating part 20 and heated; and an exhaust step in which the workpiece W supported by the hotter plate 22 is removed. The processing space S in the chamber 30 is exhausted from the peripheral area further outside the edge; and in the gas ejection step, a plurality of ejection holes 54 are dispersedly arranged along the surface facing the workpiece W supported by the hot plate 22 , spraying gas onto the surface of the substrate; in the state of performing the heating step, the exhausting step and the gas spraying step are simultaneously performed, and further includes a step of increasing the amount of exhausting gas in the exhausting step.

When the above-mentioned coating and developing device 2 and the substrate processing program perform heat treatment on the workpiece W as the processing target, exhaust is performed from the outer peripheral exhaust portion 60, so the air flow that may be generated when the exhaust is performed from the central area can be reduced. This leads to its impact on the coating film, especially on the film thickness. In addition, by increasing the amount of exhaust gas from the peripheral exhaust portion 60 while the workpiece W is being heated, the sublimated matter can be efficiently recovered in the later stage of the heat treatment, so that damage to the workpiece W caused by the sublimated matter can be suppressed. Defect.

In addition, the control device 100 can also control the gas ejection part 50 to increase the ejection amount from the gas ejection part 50 while the workpiece W is being heated. By adopting such a structure, the flow of the air flow near the surface of the workpiece W can be used to move the sublimate efficiently, so that defects of the workpiece W produced during the heat treatment can be suppressed.

In addition, the control performed by the control device 100 to increase the ejection volume from the gas ejection part 50 may be performed after the control to increase the exhaust volume from the outer peripheral exhaust part 60 . By adopting such a structure, it is possible to avoid the influence of the coating film due to an increase in the amount of gas ejected to the surface of the workpiece W, and to efficiently recover the sublimated matter, so that it is possible to further suppress the damage caused by the sublimated matter. Defect of workpiece W.

In addition, a buffer space B below the hot plate 22 connected to the processing space S may be formed in the chamber 30; an inlet 323 may also be provided to supply gas to the buffer space B from outside the chamber 30. gas supply department. At this time, the buffer space B can also be made larger in volume than the processing space S. With this configuration, the gas supplied from the inlet 323 is heated in the buffer space B and then supplied to the processing space S, thereby preventing the temperature of the workpiece W in the processing space S from changing. In addition, the gas supplied from the inlet 323 prevents components around the processing space S such as the upper chamber 31 from cooling. Therefore, the sublimate in the processing space S is also prevented from solidifying due to contact with the cooling member. Furthermore, since the volume of the processing space S is small, the heat capacity of the gas inside the processing space S also becomes small. Therefore, the temperature of the processing space S can be easily stabilized, and the heat treatment of the workpiece W itself can be performed stably.

The hot plate 22 may be provided with an adsorption hole 22b for adsorbing the workpiece W to the hot plate. It may further be provided with a resin liner 43 having a flow path connected to the adsorption hole 22b. At this time, the resin gasket 43 may communicate with the adsorption hole 22b and be connected to the hot plate 22 via the metal member 42. In this case, compared with the case where the resin gasket 43 and the hot plate 22 are directly connected, the deterioration of the resin gasket 43 caused by the heat from the hot plate 22 can be suppressed.

Furthermore, the metal member 42 may have a large diameter portion 42a. In addition, a flow path space 42b with a large cross-sectional area may be provided inside the large diameter portion 42a. By having such a structure, the risk of clogging due to sublimation produced during heat treatment is reduced. In addition, the heat of the gas sucked from the processing space S when the workpiece W is adsorbed is relaxed by the flow path space 42b with a large cross-sectional area inside the large-diameter portion 42a. Therefore, the risk of deterioration due to high temperature of the equipment constituting the exhaust flow path reaching the resin gasket 43 and the exhaust line 27 on the downstream side can be suppressed.

Furthermore, an annular member 332 may be further provided, which is connected to the bottom of the hot plate 22 via a support column 331 . At this time, the resin gasket 43 may be located below the annular member 332 . With this configuration, the annular member 332 can effectively block the heat from the hot plate 22, so the resin gasket 43 becomes less likely to be exposed to high temperatures, and deterioration due to heat can be suppressed.

In addition, in the above embodiment, all the gases ejected from the plurality of ejection holes 54 provided in the nozzle head 52 of the gas ejection part 50 are distributed in the gas distribution space, so the same type of gas and the same temperature are ejected. In this regard, the control device 100 can also control the gas ejection part 50 so that the gas ejected from the plurality of ejection holes 54 provided in the nozzle head 52 of the gas ejection part 50 is opposite to the outer periphery of the workpiece W. The temperature is higher than the temperature of the gas ejected from the ejection hole 54 facing the center of the workpiece W. By adopting such a structure, the solidification of the coating film can be accelerated especially on the outer peripheral side of the workpiece W. In the above-mentioned heat treatment unit U2, since exhaust is exhausted through the outer peripheral exhaust part 60, an air flow is generated from the center side of the workpiece W to the outside. Therefore, the solvent concentration in the space above the outer peripheral side of the workpiece W tends to become higher than that in the center. The space on the side is higher. That is, since exhaust is performed through the outer peripheral exhaust portion 60, the volatilization of the solvent on the center side of the workpiece W is more easily accelerated, and the volatilization of the solvent on the outer peripheral side of the workpiece W may be slower. The difference in the volatilization speed of the solvent may affect the uniformity of the coating on the workpiece W. Therefore, by controlling the gas ejection part 50 as described above, the temperature of the gas ejected from the ejection hole 54 is made higher, thereby reducing the volatilization speed difference of the solvent inside and outside the workpiece W and improving the uniformity of the coating film. The control of making the temperature of the gas different between the center side and the outer peripheral side of the workpiece W as described above is effective in any of the early stage to the late stage of the heat treatment (see FIG. 9 ).

The control device 100 can also control the gas ejection part 50 so that the gas flow rate ejected from the plurality of ejection holes 54 provided in the nozzle head 52 of the gas ejection part 50 and opposite to the outer periphery of the workpiece W is relatively high. The flow rate of the gas ejected from the ejection hole 54 opposite to the center of the workpiece W is larger. For example, in FIG. 4 , the ejection holes 54 included in the predetermined central area opposite to the center of the workpiece W are collectively regarded as the central ejection area (not shown), and will be formed into a circle on the outside. The areas of the spout holes 54 are collectively regarded as the peripheral spout area (not shown). This is achieved by dividing the interior of the nozzle head 52 into a central ejection area and an outer peripheral ejection area by partition walls, and connecting different gas supply flow paths (not shown) to each of them. By having such a structure, it is possible to suppress defects of the workpiece W caused by the sublimated material particularly on the outer peripheral side of the workpiece W. In the heat treatment unit U2, exhaust is performed through the outer peripheral exhaust part 60, so the sublimated matter generated in the center side of the workpiece W moves to the outer peripheral side, so defects caused by the sublimated matter are likely to occur on the outer peripheral side. In this regard, by controlling the gas ejection part 50 as described above, the flow rate of the gas ejected from the ejection hole 54 is increased to promote the movement of the sublimated material on the outer peripheral side of the workpiece W, thereby improving the recovery efficiency of the sublimated material. As described above, the control of making the flow rate of the gas different between the center side and the outer peripheral side of the workpiece W is effective, for example, in the later stage after the heat treatment (refer to FIG. 9 ).

[Modification] The structure of the heat treatment unit U2 described above is just an example and can be changed as appropriate. For example, the shapes of the upper chamber 31 and the lower chamber 32 of the chamber 30 may be suitably changed, and the structure is not limited to the configuration described in the above embodiment.

In addition, in the above-mentioned heat treatment process, although both the exhaust volume of the outer peripheral exhaust portion 60 (outer peripheral exhaust gas) and the gas ejection amount (gas supply) from the gas ejection portion 50 are changed during the heat treatment, only the change may be performed. The exhaust volume of the outer peripheral exhaust portion 60 (outer peripheral exhaust) is configured. Furthermore, in the above-mentioned procedure, although the case of changing in two stages of "weak" and "strong" is demonstrated, it may also be a structure which switches to three or more stages in multiple stages.

As can be seen from the above description, the various embodiments disclosed in the present invention are described in this specification for the purpose of illustration, and it should be understood that various changes can be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to limit the invention. The true scope and gist of the invention are disclosed by the patent scope of the invention.

[Note] Here, various exemplary embodiments included in the present invention are described as follows.

[1] A substrate processing apparatus including: a hot plate that performs heat treatment and supports and heats a substrate on which a coating film is formed; a chamber that covers the substrate supported by the hot plate; and a gas ejection portion that has an edge formed on the substrate. The nozzle head of a plurality of ejection holes is dispersedly arranged on the surface opposite to the substrate supported by the hot plate, and ejects gas from the plurality of ejection holes to the surface of the substrate; The peripheral area further outside the edge of the substrate exhausts the processing space in the chamber; and a control part; the control part controls the peripheral exhaust part so that when the substrate is heated, the exhaust gas from the The exhaust volume of the peripheral exhaust portion increases.

The above-mentioned substrate processing apparatus exhausts air from the outer peripheral exhaust portion when performing heat treatment on the substrate to be processed, so it can reduce damage to the coating film caused by air flow that may occur when exhausting air from the central area. effects, especially on film thickness. In addition, by increasing the amount of exhaust gas from the peripheral exhaust portion while the substrate is being heated, sublimates can be efficiently recovered in the later stage of the heat treatment, thereby suppressing defects in the substrate caused by sublimates.

[2] The substrate processing apparatus according to [1], wherein the control part controls the gas ejection part so that the ejection amount from the gas ejection part is increased while the substrate is being heated.

According to the above structure, the flow of the air flow near the substrate surface can be used to efficiently move the sublimate, so substrate defects generated during heat treatment can be suppressed.

[3] The substrate processing apparatus according to [2], wherein the control performed by the control unit to increase the ejection amount from the gas ejection part is a control to increase the exhaust amount from the outer peripheral exhaust part. Implemented later.

According to the above structure, it is possible to prevent the coating film from being affected by an increase in the amount of gas ejected to the substrate surface, and the sublimated matter is efficiently recovered, so that defects of the substrate caused by the sublimated matter can be further suppressed.

[4] The substrate processing apparatus according to any one of [1] to [3], wherein a buffer space connected to the processing space and below the hot plate is further formed in the chamber; and further equipped with a gas supply part, which supplies gas to the buffer space from outside the chamber; the volume of the buffer space is larger than that of the processing space.

According to the above configuration, the gas supplied from the gas supply unit is heated in the buffer space and then supplied to the processing space, thereby preventing the temperature of the substrate in the processing space from changing. In addition, the gas supplied from the gas supply part prevents components around the processing space from cooling, and also prevents sublimates from contacting and solidifying with the cooled components.

[5] The substrate processing apparatus according to any one of [1] to [4], wherein the hot plate is provided with an adsorption hole for adsorbing the substrate to the hot plate; the substrate processing apparatus further includes a resin-made The gasket has a flow path communicating with the adsorption hole; the resin gasket communicates with the adsorption hole and is connected to the hot plate via a metal member.

According to the above configuration, compared with a case where the resin liner is directly connected to the hot plate, the deterioration of the resin liner caused by the heat from the hot plate can be suppressed.

[6] The substrate processing apparatus according to [5], wherein the metal member has a large-diameter portion.

According to the above structure, a flow path space with a large cross-sectional area can be formed inside the large-diameter portion, thereby reducing the risk of clogging due to sublimation produced during heat treatment. In addition, the flow path space with a large cross-sectional area relaxes the heat of the gas sucked from the processing space when adsorbing the substrate, so the risk of deterioration caused by the flow of high-temperature gas to the downstream side can be suppressed.

[7] The substrate processing apparatus according to [5], further comprising an annular member connected below the hot plate via a support column; and the resin gasket is located below the annular member.

With this configuration, the annular member 332 can effectively block the heat from the hot plate 22, so the resin gasket 43 becomes less likely to be exposed to high temperatures, and deterioration due to heat can be suppressed.

[8] The substrate processing apparatus according to any one of [1] to [7], wherein the control unit controls the gas ejection unit so that a plurality of ejection holes are provided from the nozzle head of the gas ejection unit. The temperature of the gas ejected from the ejection holes facing the outer periphery of the substrate is higher than the temperature of the gas ejected from the ejection holes opposite the center of the substrate.

[9] The substrate processing apparatus according to any one of [1] to [7], wherein the control unit controls the gas ejection unit so that the plurality of ejection holes provided in the nozzle head of the gas ejection unit The flow rate of the gas ejected from the ejection holes opposite to the outer periphery of the substrate is greater than the flow rate of the gas ejected from the ejection holes opposite to the center of the substrate.

By having the above-mentioned structure, it is possible to suppress defects of the substrate caused by sublimation particularly on the outer peripheral side of the substrate.

In addition, the exemplary embodiments of the substrate processing apparatuses of the above-mentioned [1] to [9] can also be described as the exemplary embodiments of the substrate processing methods of the above-mentioned [10] to [18]. The substrate processing methods described in [10] to [18] can achieve the same effects as the substrate processing devices of [1] to [9] respectively.

[10] A substrate processing method, which includes a step of subjecting a substrate with a coating film to heat treatment; subjecting the substrate to heat treatment includes a heating step of supporting the substrate in a state of being covered by a chamber on a heating unit a hot plate for heating; an exhaust step for exhausting the processing space in the chamber from a peripheral area further outside than the edge of the substrate supported by the hot plate; A plurality of ejection holes dispersedly arranged on the opposite surface of the substrate supported by the board eject gas on the surface of the substrate; in the state of performing the heating step, the exhaust step and the gas ejection step are simultaneously performed, and further include A step to increase the exhaust volume in this exhaust step.

[11] The substrate processing method according to [10], wherein the exhaust step and the gas injection step are simultaneously performed while the heating step is being performed, and further includes a step of increasing the injection amount in the gas injection step. .

[12] The substrate processing method according to [11], wherein the step of increasing the ejection volume in the gas ejection step is performed after the step of increasing the exhaust volume in the evacuation step.

[13] The substrate processing method according to any one of [10] to [12], wherein a buffer space connected to the processing space and lower than the hot plate is further formed in the chamber; and further includes a gas supply In the step, gas is supplied to the buffer space from outside the chamber; the volume of the buffer space is larger than that of the processing space.

[14] The substrate processing method according to any one of [10] to [13], wherein the hot plate is provided with adsorption holes for adsorbing the substrate to the hot plate; and further is provided with a resin liner, It has a flow path connected to the adsorption hole; the resin liner communicates with the adsorption hole and is connected to the hot plate through a metal member.

[15] The substrate processing method according to [14], wherein the metal member has a large-diameter portion.

[16] The substrate processing method according to [14], further comprising a ring-shaped member connected to the bottom of the hot plate via a support column; and the resin gasket is located below the ring-shaped member.

[17] The substrate processing method according to any one of [10] to [16], wherein in the gas ejection step, gas is ejected from the ejection holes of the plurality of ejection holes that are opposed to the outer periphery of the substrate. The temperature of the gas is higher than the temperature of the gas ejected from the ejection hole facing the center of the substrate.

[18] The substrate processing method according to any one of [10] to [16], wherein in the gas ejection step, gas is ejected from the ejection holes of the plurality of ejection holes that are opposed to the outer periphery of the substrate. The flow rate of the gas is greater than the flow rate of the gas ejected from the ejection hole opposite to the center of the substrate.

1:Substrate processing system 2: Coating and developing device 3: Exposure device 4: Vehicle block 5: Processing blocks 6:Interface block 11,12,13,14: Processing module 20:Heating part 22:Hot plate 22a:Placement surface 22b: Adsorption hole 24:Hot plate heater 27:Exhaust pipe 30: Chamber 31: Upper chamber 311:top plate 312:Side wall 312a: Lower end surface 312b: Inner peripheral surface 32:Lower chamber 321: Support bottom wall 322: Peripheral wall 323:Inlet 330:Support Department 331:Support column 332: Ring member 333: Foot member 38: Chamber drive unit 41:Relay component 41a:Relay hole 42:Metal components 42a: Large diameter part 42b: Flow path space 43:Padding 50: Gas injection part 52:Nozzle head 54:Spit hole 56:Supply Road 60: Peripheral exhaust part 61: 1st exhaust hole 62: 2nd exhaust hole 65:Exhaust duct 67:Valve 90:Case 100:Control device 102:Memory department 104:Control Department 110:Circuit 112: Processor 114:Memory 116:Storage 122: timer 118:Input/output port A1, A3, A7, A8: handling device B: Buffer space C:Vehicle F1, F2: air flow g: gap S: processing space U1, U3, U5: coating unit U2, U4, U6, U8: heat treatment unit U7:Developing unit U10,U11:Scaffolding unit V: storage space W: workpiece

FIG. 1 is a schematic diagram of an example of a substrate processing system. FIG. 2 is a schematic diagram of an example of a coating and developing device. Figure 3 is a schematic diagram of an example of a heat treatment unit. FIG. 4 is a schematic diagram of an example of a gas ejection part. FIG. 5 is a block diagram showing an example of the hardware configuration of the control device. FIG. 6 is a flowchart showing an example of a substrate processing procedure. FIG. 7 is a flow chart showing an example of the heat treatment procedure. 8(a) to 8(c) are schematic diagrams illustrating an example of the movement of each component and the flow of gas in the heat treatment process. FIG. 9 is a diagram showing an example of the relationship between the size of the air flow and the temperature of the workpiece in the heat treatment process.

20:Heating part

22:Hot plate

22a:Placement surface

22b: Adsorption hole

24:Hot plate heater

27:Exhaust pipe

30: Chamber

31: Upper chamber

311:top plate

312:Side wall

312a: Lower end surface

312b: Inner peripheral surface

32:Lower chamber

321: Support bottom wall

322: Peripheral wall

323:Inlet

330:Support Department

331:Support column

332: Ring member

333: Foot member

38: Chamber drive unit

41:Relay component

41a:Relay hole

42:Metal components

42a: Large diameter part

42b: Flow path space

43:Padding

50: Gas injection part

52:Nozzle head

54:Spit hole

56:Supply Road

60: Peripheral exhaust part

61: 1st exhaust hole

62: 2nd exhaust hole

65:Exhaust duct

67:Valve

90:Case

g: gap

S: processing space

U2: Heat treatment unit

V: storage space

W: workpiece

B: Buffer space

Claims (18)

A substrate processing device including: The hot plate performs heat treatment and supports and heats the substrate on which the coating film is formed; a chamber covering the substrate supported by the hot plate; The gas ejection part has a nozzle head, the nozzle head is formed with a plurality of ejection holes dispersedly arranged along the surface facing the substrate supported by the hot plate, and the gas is ejected from the plurality of ejection holes to the surface of the substrate; The peripheral exhaust part exhausts the processing space in the chamber from a peripheral area further outside the edge of the substrate supported by the hot plate; and control department; The control unit controls the outer peripheral exhaust unit to increase the amount of exhaust gas from the outer peripheral exhaust unit while the substrate is being heated. The substrate processing device of claim 1, wherein, The control part controls the gas ejection part so that the ejection amount from the gas ejection part is increased while the substrate is being heated. The substrate processing device of claim 2, wherein, The control performed by the control unit to increase the ejection volume from the gas ejection unit is performed after the control to increase the exhaust volume from the outer peripheral exhaust unit. The substrate processing device according to any one of claims 1 to 3, wherein, In the chamber, a buffer space connected to the processing space and lower than the hot plate is further formed; The substrate processing device further includes a gas supply part that supplies gas to the buffer space from outside the chamber; The buffer space is larger in volume than the processing space. The substrate processing device according to any one of claims 1 to 3, wherein, The hot plate is provided with adsorption holes for adsorbing the substrate to the hot plate; The substrate processing device further includes a resin liner having a flow path connected to the adsorption hole; The resin liner communicates with the adsorption hole and is connected to the hot plate via a metal member. The substrate processing device of claim 5, wherein, This metal member has a large diameter portion. The substrate processing device of claim 5, wherein, It further includes an annular member, which is connected to the bottom of the hot plate through the support column; The resin gasket is located below the annular member. The substrate processing device according to any one of claims 1 to 3, wherein, The control part controls the gas ejection part so that the temperature of the gas ejected from the ejection holes opposite to the outer periphery of the substrate among the plurality of ejection holes provided in the nozzle head of the gas ejection part is closer to that of the substrate. The gas ejected from the nozzle hole opposite to the center has a higher temperature. The substrate processing device according to any one of claims 1 to 3, wherein, The control part controls the gas ejection part so that the flow rate of the gas ejected from the ejection holes opposite to the outer periphery of the substrate among the plurality of ejection holes provided in the nozzle head of the gas ejection part is relatively consistent with the substrate. The flow rate of the gas ejected from the opposite nozzle hole in the center is greater. A substrate processing method, including the step of performing heat treatment on a substrate on which a coating film is formed; The steps of performing the heat treatment on the substrate include: In the heating step, the substrate covered by the chamber is supported on the hot plate of the heating unit and heated; The exhausting step is to exhaust the processing space in the chamber from a peripheral area further outside the edge of the substrate supported by the hot plate; and The gas spraying step is to spray gas onto the surface of the substrate from a plurality of spray holes dispersedly arranged along the surface facing the substrate supported by the hot plate; It further includes a step of increasing the exhaust volume in the exhaust step while performing the exhaust step and the gas injection step simultaneously while performing the heating step. For example, the substrate processing method of claim 10 further includes: A step of increasing the ejection amount in the gas ejection step while performing the exhaust step and the gas ejection step simultaneously while the heating step is being performed. Such as the substrate processing method of claim 11, wherein, The step of increasing the ejection amount in the gas ejection step is performed after the step of increasing the exhaust amount in the exhaust step. The substrate processing method of any one of claims 10 to 12, wherein, In the chamber, a buffer space connected to the processing space and lower than the hot plate is further formed; It further includes: a gas supply step, supplying gas to the buffer space from outside the chamber; The buffer space is larger in volume than the processing space. The substrate processing method of any one of claims 10 to 12, wherein, The hot plate includes adsorption holes for adsorbing the substrate to the hot plate; It further includes a resin liner, which has a flow path connected with the adsorption hole; The resin liner communicates with the adsorption hole and is connected to the hot plate via a metal member. Such as the substrate processing method of claim 14, wherein, This metal member has a large diameter portion. Such as the substrate processing method of claim 14, wherein, It further includes an annular member, which is connected to the hot plate through the support column to the bottom; The resin gasket is located below the annular member. The substrate processing method of any one of claims 10 to 12, wherein, In the gas ejection step, the temperature of the gas ejected from the ejection holes opposite to the outer periphery of the substrate is made higher than the temperature of the gas ejected from the ejection holes opposite to the center of the substrate. . The substrate processing method of any one of claims 10 to 12, wherein, In the gas ejection step, the flow rate of the gas ejected from the ejection holes opposite to the outer periphery of the substrate is made greater than the flow rate of the gas ejected from the ejection holes opposite to the center of the substrate. .

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