JP2022007534A - Heat treatment unit, substrate processing device, heat treatment method, and storage medium - Google Patents

Abstract

To achieve both efficient collection of a sublimate and heat treatment in a low oxygen state.SOLUTION: A heat treatment unit includes: a heating part which supports and heats a substrate having a film formed thereon; a chamber having a peripheral wall part which surrounds the periphery of the heating part, and a lid part which covers the heating part in a state of having a gap with respect to the peripheral wall part to form a processing space on the heating part; a housing which accommodates the heating part and the chamber; a first gas supply part which supplies a first gas lower in oxygen concentration than the atmosphere, to a processing space; an exhaust part by which the processing space is exhausted with a displacement larger than the supply amount of the first gas; a second gas supply part which supplies a second gas lower in oxygen concentration than the atmosphere to the gap between the peripheral wall part and the lid part; and a third gas supply part which supplies a third gas lower in oxygen concentration than the atmosphere to the outside of the chamber in the housing.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to a heat treatment unit, a substrate processing apparatus, a heat treatment method, and a storage medium.

Patent Document 1 describes a heating plate on which a substrate is placed and heated, and a hypoxic atmosphere forming gas for creating a hypoxic atmosphere when heating the substrate from one end to the other end of the processing space. A substrate heating device including a gas supply unit to be supplied toward is disclosed.

International Publication No. 2020/022069

The present disclosure provides a heat treatment unit, a substrate processing apparatus, a heat treatment method, and a storage medium capable of achieving both efficient recovery of sublimated products and heat treatment in a low oxygen state.

The heat treatment unit according to one aspect of the present disclosure is heated in a state where a gap is provided between the heating portion that supports and heats the substrate on which the coating is formed, the peripheral wall portion that surrounds the heating portion, and the peripheral wall portion. A chamber having a lid portion that forms a processing space on the heating portion by covering the portion, a housing accommodating the heating portion and the chamber, and a first gas having an oxygen concentration lower than that of the atmosphere are supplied to the processing space. 1 gas supply unit, an exhaust unit that exhausts the treatment space with an exhaust volume larger than the supply amount of the first gas, and a second gas having an oxygen concentration lower than that of the atmosphere are supplied to the gap between the peripheral wall portion and the lid portion. A second gas supply unit is provided, and a third gas supply unit that supplies a third gas having an oxygen concentration lower than that of the atmosphere to the outside of the processing space inside the housing is provided.

According to the present disclosure, there are provided a heat treatment unit, a substrate processing apparatus, a heat treatment method, and a storage medium capable of achieving both efficient recovery of sublimated products and heat treatment in a low oxygen state.

FIG. 1 is a schematic diagram showing an example of a substrate processing system. FIG. 2 is a schematic view showing an example of a coating and developing apparatus. FIG. 3 is a side view schematically showing an example of the heat treatment unit. FIG. 4 is a side view schematically showing an example of the heat treatment unit. FIG. 5 is a plan view schematically showing an example of the lid portion of the chamber. FIG. 6 is an enlarged schematic view of an example of the heat treatment unit. FIG. 7 is a plan view schematically showing a part of the heat treatment unit and an example of the gas supply unit. FIG. 8 is a side view schematically showing an example of the pin exhaust unit. FIG. 9 is a block diagram showing an example of the hardware configuration of the control device. FIG. 10 is a flowchart showing an example of the heat treatment method. FIG. 11 is a flowchart showing an example of heat treatment. 12 (a) and 12 (b) are schematic views for explaining an example of the heat treatment method. 13 (a) and 13 (b) are schematic views for explaining an example of heat treatment. 14 (a) and 14 (b) are schematic views for explaining an example of heat treatment. FIG. 15A is a schematic diagram for explaining an example of heat treatment. FIG. 15B is a schematic diagram for explaining an example of the cooling process.

Hereinafter, various exemplary embodiments will be described.

In the heat treatment unit according to one exemplary embodiment, a gap is provided between the heating portion that supports and heats the substrate on which the coating is formed, the peripheral wall portion that surrounds the heating portion, and the peripheral wall portion. A chamber having a lid portion that forms a treatment space on the heating portion by covering the heating portion, a housing accommodating the heating portion and the chamber, and a first gas having an oxygen concentration lower than that of the atmosphere are supplied to the treatment space. A first gas supply part, an exhaust part that exhausts the treatment space with an exhaust amount larger than the supply amount of the first gas, and a second gas having an oxygen concentration lower than that of the atmosphere in the gap between the peripheral wall part and the lid part. It includes a second gas supply unit for supplying a third gas, and a third gas supply unit for supplying a third gas having an oxygen concentration lower than that of the atmosphere to the outside of the chamber inside the housing.

In this heat treatment unit, since the amount of exhaust gas by the exhaust unit is larger than the amount of supply of the first gas, the heat treatment unit is exhausted so that the processing space has a negative pressure. As a result, the sublimated material generated from the coating film due to the heating of the substrate can be efficiently recovered. On the other hand, since a gap is provided between the peripheral wall portion and the lid portion, gas is drawn into the processing space from the outside of the processing space so as to eliminate the negative pressure state of the processing space. Specifically, the second gas supplied from the second gas supply portion to the gap between the peripheral wall portion and the lid portion is drawn into the treatment space. Further, even when a gas larger than the supply amount of the second gas is drawn into the treatment space, the second gas from the second gas supply section and the gas outside the chamber that has been made hypoxic by the third gas supply section Is drawn into the processing space. Therefore, the processing space is maintained in a low oxygen state. Therefore, it is possible to achieve both efficient recovery of sublimated products and heat treatment in a low oxygen state.

The exhaust section exhausts the processing space from the outer peripheral region outside the peripheral edge of the substrate supported by the heating section and the central region inside the peripheral edge of the substrate supported by the heating section. It may have a central exhaust section. In the pre-stage of the process of solidifying the film on the substrate with heating, the influence of the exhaust of the treatment space on the film thickness is large, and in the latter stage of the process of solidifying the film, the effect of the exhaust of the treatment space on the film thickness is small. In the above configuration, it is possible to exhaust from the outer peripheral region in the previous stage of the solidification process, and it is possible to suppress the influence on the film thickness caused by the exhaust of the processing space. Further, in the latter stage of the solidification process in which the degree of influence on the film thickness is small, the sublimated material can be efficiently recovered because it can be exhausted from the central region. Therefore, it is possible to improve the in-plane uniformity of the film thickness while efficiently recovering the sublimated product.

The first gas supply unit has a head unit in which a plurality of discharge holes scattered along a surface facing the substrate supported by the heating unit are formed, and the plurality of discharge holes are directed toward the substrate on the heating unit. The first gas may be supplied. In this case, the influence of the first gas from the first gas supply unit on the film thickness is made uniform. Therefore, it is possible to improve the in-plane uniformity of the film thickness.

The peripheral wall portion may be arranged with a gap between it and the heating portion. The exhaust portion may have a peripheral exhaust portion that exhausts the processing space from the gap between the peripheral wall portion and the heating portion. In this case, it is possible to suppress an increase in the oxygen concentration in the treatment space due to the gas existing in the gap between the heating portion and the peripheral wall portion, and it is possible to more reliably perform the heat treatment in a low oxygen state. Become.

At least a part of the exhaust passage included in the peripheral exhaust portion and at least a part of the supply air passage included in the second gas supply portion may be arranged in a state of being close to each other. In this case, the temperature of the second gas supplied through the air supply passage of the second gas supply section rises, and the second gas from the second gas supply section is sucked into the treatment space, so that the treatment space becomes It is possible to prevent the temperature from dropping.

The heat treatment unit includes a plurality of support pins individually inserted into a plurality of through holes penetrating the heating portion along the vertical direction, and a plurality of substrate elevating portions having an elevating drive portion for raising and lowering the plurality of support pins. A pin exhaust portion for exhausting the processing space from the through hole of the above may be further provided. In this case, when the substrate is separated from the heating portion, it is possible to suppress an increase in the oxygen concentration in the processing space due to the gas from the through hole into which the support pin is inserted, and it is possible to more reliably reduce the oxygen concentration. It is possible to perform heat treatment in the state.

The pin exhaust section may include a plurality of individual exhaust passages individually connected to a plurality of through holes below the heating portion, and a common exhaust passage connected to the plurality of individual exhaust passages. In this case, the space of the pin exhaust portion can be saved as compared with the case where the exhaust space connected to the plurality of through holes is provided below the heating portion and the air is exhausted from the plurality of through holes.

The individual exhaust passage of one of the plurality of individual exhaust passages intersects the first region extending downward from the corresponding one through hole of the plurality of through holes in the extending direction of the first region. It may include a second region extending along the. The pin exhaust portion may include a first exhaust passage forming portion forming the first region and a second exhaust passage forming portion forming the second region. One of the support pins among the plurality of support pins is arranged in the first region along the extending direction of the first region in one individual exhaust passage, and is provided at the bottom of the second exhaust passage forming portion. It may be inserted into the connection hole. The first exhaust passage forming portion may include a bellows that can be expanded and contracted along the extending direction of the first region. The pin exhaust may include a sealing member that is arranged to close the connection hole and is movable with respect to the connection hole. In this case, hypoxia is achieved by absorbing the contraction or expansion of the exhaust passage forming portion due to the temperature rise of the heating portion by the bellows, and by closing the connection hole connected to the lower end of the individual exhaust passage with a sealing member. It is possible to suppress the inflow of non-gas into the processing space through the individual exhaust passages.

The coating film may be a coating film formed by applying a treatment liquid to the surface of the substrate. In this case, it is possible to improve the characteristics of the coating film by heat treatment under low oxygen while efficiently recovering the sublimated product generated by the temperature rise of the coating film.

The substrate processing apparatus according to one exemplary embodiment includes the heat treatment unit and a control unit for controlling the heat treatment unit. The control unit has the supply amount of the first gas and the supply amount of the second gas from the first state in which the treatment space is exhausted with an exhaust amount smaller than the sum of the supply amount of the first gas and the supply amount of the second gas. The heat treatment unit is controlled so as to switch to the second state in which the processing space is exhausted with a displacement larger than the sum of the above.

It tends to take time for the area outside the processing space and the gap in the housing to have an oxygen concentration as low as in the processing space. However, if the substrate is started to be heated after waiting until the processing space and the region outside the gap have a sufficiently low oxygen concentration, the efficiency of the substrate processing is lowered. On the other hand, in the above configuration, in the first state, the processing space is exhausted with an amount of exhaust gas other than the second gas from the second gas supply unit so as not to enter the processing space. Then, in the second state after switching from the first state, the gas in a sufficiently low oxygen state can be drawn into the processing space from the gap and the region outside the processing space. Therefore, it is possible to improve the efficiency of the substrate processing including the processing of heating the substrate under low oxygen.

The exhaust section exhausts the processing space from the outer peripheral region outside the peripheral edge of the substrate supported by the heating section and the central region inside the peripheral edge of the substrate supported by the heating section. It may have a central exhaust section. The control unit may control the exhaust unit so that the processing space is exhausted by at least the outer peripheral exhaust unit in the first state and the processing space is exhausted by at least the central exhaust unit in the second state. In this case, by exhausting the processing space from the outer peripheral region in the first state in the first stage of the solidification process related to the coating film on the substrate, the influence of the exhaust on the film thickness can be suppressed. On the other hand, in the latter stage of the solidification process in which the degree of influence on the film thickness is small, the sublimated material can be efficiently recovered because it can be exhausted from the central region in the second state. Therefore, it is possible to improve the in-plane uniformity of the film thickness while efficiently recovering the sublimated product.

The heat treatment method according to one exemplary embodiment is a treatment formed on the heating portion by a chamber having a peripheral wall portion surrounding the heating portion and a lid portion arranged with a gap between the peripheral wall portion. In the space, the heating part is used to heat the substrate on which the film is formed, the first gas having a lower oxygen concentration than the atmosphere is supplied to the treatment space, and the exhaust amount is larger than the supply amount of the first gas. Exhaust the treatment space with, supply the second gas with a lower oxygen concentration than the atmosphere to the gap between the peripheral wall and the lid, and supply the third gas with a lower oxygen concentration than the atmosphere to the heating unit. And supplying outside the chamber within the housing accommodating the chamber. In this heat treatment method, as in the heat treatment unit described above, it is possible to achieve both efficient recovery of sublimated products and heat treatment in a low oxygen state.

The storage medium according to one exemplary embodiment is a computer-readable storage medium that stores a program for causing the apparatus to execute the heat treatment method.

Hereinafter, one embodiment will be described with reference to the drawings. In the description, the same elements or elements having the same function are designated by the same reference numerals, and duplicate description will be omitted.

The substrate processing system 1 shown in FIG. 1 is a system for forming a photosensitive film, exposing the photosensitive film, and developing the photosensitive film on the work W. The work W to be processed is, for example, a substrate or a substrate in which a film, a circuit, or the like is formed by being subjected to a predetermined treatment. The substrate included in the work W is, for example, a wafer containing silicon. The work W (substrate) may be formed in a circular shape. The work W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like, or may be an intermediate obtained by subjecting these substrates or the like to a predetermined treatment. The photosensitive film is, for example, a resist film.

The substrate processing system 1 includes a coating / developing device 2 and an exposure device 3. The coating / developing apparatus 2 applies a resist (chemical solution) to the surface of the work W to form a resist film before the exposure process by the exposure apparatus 3, and develops the resist film after the exposure process. The exposure apparatus 3 is an apparatus for exposing a resist film (photosensitive film) formed on the work W (substrate). Specifically, the exposure apparatus 3 irradiates the exposed portion of the resist film with energy rays by a method such as immersion exposure.

[Board processing equipment]
Hereinafter, the configuration of the coating / developing device 2 will be described as an example of the substrate processing device. As shown in FIGS. 1 and 2, the coating / developing device 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 200 (control unit).

The carrier block 4 introduces the work W into the coating / developing device 2 and derives the work W from the coating / developing device 2. For example, the carrier block 4 can support a plurality of carriers C for the work W, and has a built-in transfer device A1 including a transfer arm. The carrier C accommodates, for example, a plurality of circular workpieces W. The transport device A1 takes out the work W from the carrier C, passes it to the processing block 5, receives the work W from the processing block 5, and returns it to the carrier C. The processing block 5 has processing modules 11, 12, 13, and 14.

The processing module 11 incorporates a liquid processing unit U1, a heat treatment unit U2, and a transfer device A3 for transporting the work W to these units. The treatment module 11 forms an underlayer film on the surface of the work W by the liquid treatment unit U1 and the heat treatment unit U2. Examples of the lower layer film include an SOC (Spin On Carbon) film. The liquid treatment unit U1 applies a treatment liquid for forming an underlayer film onto the work W. The heat treatment unit U2 performs various heat treatments accompanying the formation of the underlayer film. The heat treatment unit U2, for example, heat-treats the coating film (film) formed by applying the treatment liquid for forming the SOC film to the surface of the work W. By heating the film of the treatment liquid for forming the SOC film, the film is cured by the cross-linking reaction in the film. As a result, an SOC film is formed on the surface of the work W.

The processing module 12 incorporates a liquid processing unit U1, a heat treatment unit U2, and a transfer device A3 for transporting the work W to these units. The treatment module 12 forms a resist film on the lower layer film by the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 forms a film of the treatment liquid on the surface of the work W by applying the treatment liquid for forming a resist film on the lower layer film. The heat treatment unit U2 performs various heat treatments accompanying the formation of the resist film.

The processing module 13 incorporates a liquid processing unit U1, a heat treatment unit U2, and a transfer device A3 for transporting the work W to these units. The treatment module 13 forms an upper layer film on the resist film by the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 applies a treatment liquid for forming an upper layer film onto the resist film. The heat treatment unit U2 performs various heat treatments accompanying the formation of the upper layer film.

The processing module 14 incorporates a liquid processing unit U1, a heat treatment unit U2, and a transfer device A3 for transporting the work W to these units. The processing module 14 uses the liquid treatment unit U1 and the heat treatment unit U2 to develop the exposed resist film and perform heat treatment associated with the development treatment. The liquid treatment unit U1 develops a resist film by applying a developing solution on the surface of the exposed work W and then rinsing it with a rinsing solution. The heat treatment unit U2 performs various heat treatments associated with the development process. Specific examples of the heat treatment include heat treatment before development (PEB: Post Exposure Bake), heat treatment after development (PB: Post Bake), and the like.

A shelf unit U8 is provided on the carrier block 4 side in the processing block 5. The shelf unit U8 is divided into a plurality of cells arranged in the vertical direction. A transport device A7 including an elevating arm is provided in the vicinity of the shelf unit U8. The transport device A7 raises and lowers the work W between the cells of the shelf unit U8.

A shelf unit U9 is provided on the interface block 6 side in the processing block 5. The shelf unit U9 is divided into a plurality of cells arranged in the vertical direction.

The interface block 6 transfers the work W to and from the exposure apparatus 3. For example, the interface block 6 has a built-in transfer device A8 including a transfer arm, and is connected to the exposure device 3. The transport device A8 passes the work W arranged in the shelf unit U9 to the exposure device 3. The transport device A8 receives the work W from the exposure device 3 and returns it to the shelf unit U9.

The control device 200 controls the coating / developing device 2 so as to execute the coating / developing process in the following procedure, for example. First, the control device 200 controls the transfer device A1 so as to transfer the work W in the carrier C to the shelf unit U8, and controls the transfer device A7 so as to arrange the work W in the cell for the processing module 11.

Next, the control device 200 controls the transfer device A3 so as to transfer the work W of the shelf unit U8 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 11. Further, the control device 200 controls the liquid treatment unit U1 and the heat treatment unit U2 so as to form a lower layer film (for example, an SOC film) on the surface of the work W. After that, the control device 200 controls the transport device A3 so as to return the work W on which the lower layer film is formed to the shelf unit U8, and controls the transport device A7 so as to arrange the work W in the cell for the processing module 12. ..

Next, the control device 200 controls the transfer device A3 so as to transfer the work W of the shelf unit U8 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 12. Further, the control device 200 controls the liquid treatment unit U1 and the heat treatment unit U2 so as to form a resist film on the surface of the work W. After that, the control device 200 controls the transfer device A3 so as to return the work W to the shelf unit U8, and controls the transfer device A7 so as to arrange the work W in the cell for the processing module 13.

Next, the control device 200 controls the transfer device A3 so as to transfer the work W of the shelf unit U8 to each unit in the processing module 13. Further, the control device 200 controls the liquid treatment unit U1 and the heat treatment unit U2 so as to form an upper layer film on the resist film of the work W. After that, the control device 200 controls the transfer device A3 so as to transfer the work W to the shelf unit U9.

Next, the control device 200 controls the transfer device A8 so as to send the work W of the shelf unit U9 to the exposure device 3. After that, the control device 200 controls the transfer device A8 so as to receive the exposed work W from the exposure device 3 and arrange it in the cell for the processing module 14 in the shelf unit U9.

Next, the control device 200 controls the transfer device A3 so as to transfer the work W of the shelf unit U9 to each unit in the processing module 14, and the liquid processing unit U1 so as to develop the resist film of the work W. And control the heat treatment unit U2. After that, the control device 200 controls the transfer device A3 so as to return the work W to the shelf unit U8, and controls the transfer device A7 and the transfer device A1 so as to return the work W to the carrier C. This completes the coating / developing process for one piece of work W. After the coating / developing process, a process of etching the surface of the work W may be performed using a lower layer film such as an SOC film as a mask. The work W control device 200 causes the coating / developing device 2 to execute the coating / developing process for each of the plurality of work Ws in the same manner as described above.

The specific configuration of the substrate processing apparatus is not limited to the configuration of the coating / developing apparatus 2 exemplified above. The substrate processing apparatus may be any as long as it includes a heat treatment unit that heat-treats the film of the treatment liquid and a control device that can control the heat treatment unit.

(Heat treatment unit)
Subsequently, an example of the heat treatment unit U2 of the processing module 11 will be described in detail with reference to FIGS. 3 to 8. The heat treatment unit U2 shown in FIG. 3 may be provided in an atmospheric atmosphere. The heat treatment unit U2 is configured so that the work W can be heat-treated in a state where the periphery of the work W is in a low oxygen atmosphere. In the present disclosure, the "low oxygen atmosphere (state)" means an atmosphere (state) having a lower oxygen concentration than the atmosphere.

In one example, the heat treatment unit U2 heat-treats the work W in a low oxygen state where the oxygen concentration is 400 ppm or less. The oxygen concentration in the atmosphere around the work W at the time of performing the heat treatment in the heat treatment unit U2 may be 200 ppm or less, 100 ppm or less, or 50 ppm or less. For example, by heat-treating the coating film (coating film) of the treatment liquid for forming the SOC film in a low oxygen atmosphere, the denseness of the SOC film cured by the heat treatment is improved, and after the coating / developing treatment. The resistance in the etching process (difficulty of etching) is increased.

The heat treatment performed by the heat treatment unit U2 shown in FIG. 3 includes a heat treatment for applying heat to the work W (coating) to be treated and a cooling treatment for cooling the heat-treated work W (coating). included. The heat treatment unit U2 includes, for example, an accommodating unit 20, a cooling treatment unit 30, a heat treatment unit 50, and a transfer unit 190 that conveys a work W between the cooling treatment unit 30 and the heat treatment unit 50.

The accommodating portion 20 accommodates each member of the heat treatment unit U2. The accommodating portion 20 includes, for example, a housing 22, a bottom plate 24, a shutter 26, and a shutter driving unit 28. The housing 22 is a container that houses a part of the cooling treatment unit 30, a part of the heat treatment unit 50, and a transport unit 190. The housing 22 is formed in a rectangular parallelepiped shape, for example. The bottom wall of the housing 22 may be placed on a horizontal surface (for example, a floor) in the processing module 11. In a plan view, the shape of the housing 22 may be rectangular.

The bottom plate 24 divides the space formed by the housing 22 into an upper region V1 and a lower region V2 arranged in the vertical direction. A heat treatment and a cooling treatment are performed in the upper region V1, and a drive device or the like for driving each member is arranged in the lower region V2. The bottom plate 24 may be a cooling plate having a heat shielding function (for example, a water cooling plate). In one example, the bottom plate 24 is made of metal, and a cooling flow path through which cooling water flows is provided inside the bottom plate 24.

A carry-in entrance 22a for carrying in / out the work W is formed on a side wall located at one end in the longitudinal direction of the housing 22 in a plan view, and the shutter 26 is configured to be able to open and close the carry-in entrance 22a. Has been done. The shutter drive unit 28 moves the shutter 26 in the vertical direction by a power source such as an electric motor. The shutter drive unit 28 moves the shutter 26 between a position where the carry-in inlet 22a is closed and a position where the carry-in entrance 22a is not closed.

The cooling processing unit 30 performs a processing for cooling the work W in the upper region V1. The cooling processing unit 30 is arranged in the longitudinal direction inside the housing 22 closer to the carry-in inlet 22a than the side wall opposite to the side wall on which the carry-in inlet 22a is provided. In the example shown in FIG. 3, the carry-in inlet 22a, the cooling treatment section 30, and the heat treatment section 50 are arranged in this order along the longitudinal direction. The cooling processing unit 30 includes, for example, a cooling plate 32, a work elevating unit 34, and a gas supply unit 40.

The cooling plate 32 is a plate on which the work W heated by the heat treatment unit 50 is placed and the work W is cooled. The cooling plate 32 may be formed in a substantially disk shape. The cooling plate 32 is made of, for example, a metal such as aluminum, silver, or copper having high thermal conductivity. Inside the cooling plate 32, a cooling flow path for flowing cooling water or a cooling gas for lowering the temperature of the work W is provided.

The work elevating part 34 raises and lowers the work W above the cooling plate 32. The work elevating portion 34 is, for example, between the processing position where the work W is placed on the support surface 32a (upper surface of the cooling plate 32) of the cooling plate 32 and the transport portion 190 or the like above the cooling plate 32. The work W is moved up and down to and from the delivery position where the work W is delivered. The work elevating unit 34 has a plurality of (for example, three) support pins 36 and an elevating drive unit 38.

The support pin 36 is a pin that supports the work W from below. The support pin 36 is inserted into a through hole formed in the cooling plate 32, and is formed so as to extend in the vertical direction. The plurality of support pins 36 are arranged at equal intervals from each other in the circumferential direction around the center of the cooling plate 32. The elevating drive unit 38 raises and lowers a plurality of support pins 36 by a power source such as an electric motor or an elevating cylinder. The elevating drive unit 38 raises the work W to the delivery position by raising the support pin 36 so that the upper end of the support pin 36 projects above the support surface 32a of the cooling plate 32, for example. Further, the elevating drive unit 38 lowers the work W to the processing position by lowering the support pin 36 so that the upper end of the support pin 36 is located below the support surface 32a (the work W is lowered to the processing position). It is placed on the support surface 32a). The elevating drive unit 38 is provided on the bottom plate 24.

The gas supply unit 40 supplies a gas having an oxygen concentration lower than that of the atmosphere to the space around the cooling plate 32 in order to keep the space around the cooling plate 32 in a hypoxic state during the cooling process for the work W. For example, the gas supply unit 40 supplies a gas having an oxygen concentration lower than that of the atmosphere (low oxygen gas) toward the support surface 32a of the cooling plate 32. The low oxygen gas supplied by the gas supply unit 40 may be any kind of gas as long as the oxygen concentration is lower than that of the atmosphere. Specific examples of the low oxygen gas supplied by the gas supply unit 40 include an inert gas (for example, nitrogen gas). The gas supply unit 40 has, for example, a head unit 42, a supply path 44, a gas source 46, and an on-off valve 48.

The head portion 42 is provided above the cooling plate 32, and discharges low oxygen gas from above toward the cooling plate 32 (work W on the cooling plate 32). The head portion 42 discharges gas from above toward substantially the entire surface of the support surface 32a of the cooling plate 32, for example. A horizontally extending discharge space is formed in the head portion 42, and the lower surface of the head portion 42 (the surface facing the cooling plate 32) penetrates between the discharge space and the space outside the head portion 42. A plurality of discharge holes 42a are formed. The plurality of discharge holes 42a may be scattered on the lower surface of the head portion 42.

The heat treatment unit 50 performs a process of heating the work W in the upper region V1. The heat treatment unit 50 is arranged side by side with the cooling treatment unit 30 along the longitudinal direction of the housing 22. The heat treatment unit 50 includes, for example, a heating unit 52, a work elevating unit 60 (substrate elevating unit), and a chamber 70.

The heating unit 52 supports and heats the work W on which the film is formed. Specifically, as shown in FIG. 4, the heating unit 52 supports the back surface Wb of the work W on which the coating film of the treatment liquid is formed on the front surface Wa, and heats the supporting work W. The heating unit 52 is arranged in the housing 22 (in the upper region V1). The heating unit 52 has, for example, a hot plate 54, a heat shield plate 56, and a support bottom wall 58. The support bottom wall 58, the heat shield plate 56, and the heat plate 54 are laminated in this order from the bottom.

The hot plate 54 has a support surface 54a on which the work W is placed, and transfers heat to the supporting work W. A heater 54b is provided inside the hot plate 54. The hot plate 54 is made of, for example, a metal such as aluminum, silver, or copper having high thermal conductivity. The hot plate 54 is formed in a disk shape, and is arranged so that the support surface 54a (upper surface) is horizontal. The diameter of the hot plate 54 is larger than the diameter of the work W.

The heat shield plate 56 supports the back surface of the heat plate 54 opposite to the support surface 54a, and blocks the heat from the heat plate 54 from being transferred downward. The heat shield plate 56 is formed in a disk shape like the heat plate 54, and the diameter of the heat shield plate 56 is about the same as the diameter of the heat plate 54. The support bottom wall 58 is formed in a disk shape and is larger than the diameter of the heat plate 54 (heat shield plate 56). The support bottom wall 58 supports the hot plate 54 and the heat shield plate 56. The support bottom wall 58 is arranged above the bottom plate 24 at intervals. The support bottom wall 58 may be connected (fixed) to the bottom plate 24 via a fixing member (not shown).

The work elevating part 60 raises and lowers the work W above the hot plate 54. The work elevating portion 60 is, for example, a processing position where the work W is placed on the support surface 54a of the hot plate 54 and a delivery position where the work W is delivered between the transport portion 190 above the hot plate 54. Move the work W up and down between and. As shown in FIG. 3, the work elevating unit 60 has a plurality of (for example, three) support pins 62 and an elevating drive unit 64.

The support pin 62 is a pin that supports the work W from below. The plurality of support pins 62 are formed so as to extend in the vertical direction. As shown in FIG. 4, the plurality of support pins 62 are individually inserted into the plurality of through holes 52a provided in the heating portion 52. That is, each support pin 62 of the plurality of support pins 62 is inserted into the corresponding through hole 52a of the plurality of through holes 52a. The through hole 52a is formed so as to penetrate the hot plate 54, the heat shield plate 56, and the support bottom wall 58 in the vertical direction, respectively. The plurality of support pins 62 (plurality of through holes 52a) are arranged at equal intervals from each other in the circumferential direction around the center CP of the hot plate 54 (see also FIG. 7).

The elevating drive unit 64 shown in FIG. 3 raises and lowers a plurality of support pins 62 by a power source such as an electric motor or an elevating cylinder. The elevating drive unit 64 raises the work W to the delivery position by raising the support pin 62 so that the upper end of the support pin 62 projects above the support surface 54a of the hot plate 54, for example. Further, the elevating drive unit 64 lowers the work W to the processing position by lowering the support pin 62 so that the upper end of the support pin 62 is located below the support surface 54a (the work W is lowered to the processing position (the work W is lowered to the processing position). Placed on the support surface 54a). The elevating drive unit 64 is arranged in the lower region V2 below the bottom plate 24. Each support pin 62 is also inserted into a through hole provided in the bottom plate 24.

As shown in FIG. 4, the chamber 70 covers the periphery and above the heating section 52 (particularly the hot plate 54). The chamber 70 has a peripheral wall portion 72 and a lid portion 74. The peripheral wall portion 72 surrounds the periphery (side) of the heating portion 52. The peripheral wall portion 72 extends upward from the peripheral edge portion of the support bottom wall 58 of the heating portion 52, and is formed in an annular shape. The height (length in the vertical direction) of the peripheral wall portion 72 may be equal to or greater than the sum of the height of the heat plate 54 and the height of the heat shield plate 56. The side surfaces (peripheral surfaces) of the hot plate 54 and the heat shield plate 56 face the peripheral wall portion 72. The peripheral wall portion 72 is arranged in a state where a gap g1 is provided between the peripheral wall portion 72 and the heating portion 52 (more specifically, the hot plate 54 and the heat shield plate 56). The gap g1 (the space between the peripheral wall portion 72 and the heating portion 52) is formed in an annular shape so as to surround the entire circumference of the hot plate 54 (see also FIG. 7).

The lid portion 74 covers the heating portion 52 with a gap g2 provided between the lid portion 74 and the peripheral wall portion 72 (more specifically, covers the work W supported by the hot plate 54). Since the lid portion 74 does not come into contact with the peripheral wall portion 72, it is possible to prevent the generation of foreign matter due to the contact between these members. By covering the work W on the hot plate 54 with the lid portion 74, a processing space S for performing the heat treatment is formed above the hot plate 54. The processing space S is a space closed to such an extent that the coating film formed on the work W can be sufficiently heated in a state where a part of the processing space S is connected to the outside space via the gap g2. The lid portion 74 is provided in the housing 22 so as to be movable in the vertical direction.

As shown in FIG. 3, the heat treatment unit 50 has an elevating drive unit 68 that moves the lid unit 74 in the vertical direction. The elevating drive unit 68 is arranged in the lower region V2, and for example, the lid unit 74 is moved along the vertical direction by a power source such as an electric motor. The elevating drive unit 68 lowers the lid portion 74 until it approaches the peripheral wall portion 72, so that the processing space S is formed by the lid portion 74. The elevating drive unit 68 raises the lid portion 74 (separates from the lid portion 74) to such an extent that the work W cannot be sufficiently heated, so that the space above the hot plate 54 is opened to the upper region V1.

As shown in FIG. 4, the lid portion 74 includes, for example, a top plate 76 and a side wall 78. The top plate 76 is formed in a disk shape having a diameter similar to that of the support bottom wall 58. The top plate 76 is arranged so as to face the support surface 54a of the hot plate 54 in the vertical direction. That is, the top plate 76 covers the support surface 54a from above. The side wall 78 is an annular member formed so as to extend downward from the outer edge of the top plate 76, and is arranged so as to face the peripheral wall portion 72 in the vertical direction. The annular side wall 78 surrounds the support surface 54a of the hot plate 54.

In a state where the lid portion 74 is close to the peripheral wall portion 72, a gap g2 is formed between the lower end of the side wall 78 and the upper end of the peripheral wall portion 72. The gap g2 (the space between the side wall 78 and the peripheral wall portion 72) is formed in an annular shape so as to surround the periphery of the hot plate 54 (treatment space S). The gap g2 and the processing space S are connected, and the distance between the inner end g21 near the processing space S in the gap g2 is narrower than the distance between the outer end g22 far from the processing space S. (See FIG. 6).

The heat treatment unit 50 further includes a gas supply unit that supplies a low oxygen gas in order to keep the treatment space S in a low oxygen atmosphere during the heat treatment of the work W. Specifically, the heat treatment unit 50 further includes a first gas supply unit 80, a second gas supply unit 90, and a third gas supply unit 100.

The first gas supply unit 80 shown in FIG. 4 supplies a gas having an oxygen concentration lower than that of the atmosphere to the processing space S. The low oxygen gas supplied by the first gas supply unit 80 (hereinafter referred to as “first gas”) may be any kind of gas as long as the oxygen concentration is lower than that of the atmosphere. Specific examples of the first gas include an inert gas (for example, nitrogen gas). In the state where the processing space S is formed, the supply of the first gas from the first gas supply unit 80 continues, so that the processing space S becomes in a hypoxic state. The first gas supply unit 80 includes, for example, a head unit 82, a supply path 84, a gas source 86, and an on-off valve 88.

The head portion 82 constitutes a part of the lid portion 74 (top plate 76). The head portion 82 discharges gas from above toward the work W on the hot plate 54 in the processing space S in the chamber 70. The head portion 82 discharges the first gas toward substantially the entire surface Wa of the work W, for example. A discharge space extending in a horizontal plane is formed in the head portion 82, and a discharge space and a processing space S are formed on the lower surface of the top plate 76 (the surface of the head portion 82 facing the work W on the hot plate 54). A plurality of discharge holes 82a are formed so as to penetrate between the two.

FIG. 5 shows a schematic view of the lid portion 74 illustrated in FIG. 4 as viewed from below. As shown in FIG. 5, the plurality of discharge holes 82a are scattered along the lower surface of the top plate 76. The plurality of discharge holes 82a are scattered at a portion of the lower surface of the top plate 76 facing the work W on the hot plate 54 (hereinafter, referred to as “opposing portion”) at a substantially uniform density. The plurality of discharge holes 82a are arranged scattered in the facing portions.

The opening areas of the plurality of discharge holes 82a may be substantially the same as each other. When the opening areas of the plurality of discharge holes 82a are substantially the same as each other, the plurality of discharge holes 82a are scattered so that the ratio of the opening area of the discharge holes 82a per unit area of the facing portions is uniform. You may. Seen from below, the shape of the discharge hole 82a may be circular or elliptical. A plurality of discharge holes 82a may be scattered so that the distance between the adjacent discharge holes 82a is substantially constant. As an example, when a plurality of discharge holes 82a are two-dimensionally arranged along the horizontal direction and the vertical direction, the intervals between the discharge holes 82a adjacent to each other in the horizontal direction may be uniform, and the discharge holes adjacent to each other in the vertical direction may be uniform. The spacing between the holes 82a may be uniform.

Returning to FIG. 4, the plurality of discharge holes 82a are connected to the supply path 84 via the discharge space. The gas source 86, which is the supply source of the first gas, supplies the first gas to the discharge space through the supply path 84. The on-off valve 88 is provided in the supply path 84, and switches the open / closed state of the supply path 84. When the on-off valve 88 is in the open state, the first gas is supplied (discharged) from the plurality of discharge holes 82a, and when the on-off valve 88 is in the closed state, the first gas is supplied from the plurality of discharge holes 82a. Stops.

FIG. 6 shows an example of the second gas supply unit 90. The second gas supply unit 90 supplies a gas having an oxygen concentration lower than that of the atmosphere to the gap g2 between the peripheral wall portion 72 and the lid portion 74. The low oxygen gas supplied by the second gas supply unit 90 (hereinafter referred to as “second gas”) may be any kind of gas as long as the oxygen concentration is lower than that of the atmosphere. Specific examples of the second gas include an inert gas (for example, nitrogen gas). The second gas supplied from the second gas supply unit 90 to the gap g2 flows into the processing space S through the inner end portion g21 of the gap g2, or flows into the processing space S through the outer end portion g22 of the gap g2, or the chamber 70. It flows into the outer region (inside the upper region V1 and outside the processing space S and the gap g2). As described above, when the opening at the end g21 is smaller than the opening at the end g22, the second gas supplied to the gap g2 tends to flow into the region outside the chamber 70 as compared with the processing space S. The second gas supply unit 90 includes, for example, a gas discharge unit 92, a supply path 94, a gas source 96, and an on-off valve 98.

The gas discharge portion 92 is provided at the upper end portion of the peripheral wall portion 72, and discharges the second gas from the inside of the peripheral wall portion 72 toward the gap g2. The gas discharge unit 92 includes a plurality of discharge holes 92a and a supply path 92b (supply air passage). The plurality of discharge holes 92a are provided on the upper end surface of the peripheral wall portion 72. The plurality of discharge holes 92a are arranged at predetermined intervals along the circumferential direction around the center CP of the hot plate 54 (see FIG. 7). The supply path 92b is provided inside the upper end portion of the peripheral wall portion 72, and is formed in an annular shape so as to extend along the circumferential direction around the central CP of the hot plate 54. The supply path 92b and the gap g2 are connected via a plurality of discharge holes 92a, and the second gas supplied to the supply path 92b is discharged to the gap g2 through the plurality of discharge holes 92a.

The supply path 92b inside the peripheral wall portion 72 is connected to the supply path 94 extending to the outside of the peripheral wall portion 72. The gas source 96, which is a supply source of the second gas, supplies the second gas to the plurality of discharge holes 92a via the supply paths 94 and 92b. The on-off valve 98 is provided in the supply path 94, and switches the open / closed state of the supply path 94. When the on-off valve 98 is in the open state, the second gas is supplied (discharged) from the plurality of discharge holes 92a, and when the on-off valve 98 is in the closed state, the second gas is supplied from the plurality of discharge holes 92a. Stops.

The third gas supply unit 100 shown in FIG. 3 or FIG. 7 supplies a gas having an oxygen concentration lower than that of the atmosphere to the outside of the processing space S inside the housing 22. Specifically, the third gas supply unit 100 supplies a low oxygen gas to the space outside the chamber 70 (outside the processing space S and the gap g2) in the upper region V1. The low oxygen gas supplied by the third gas supply unit 100 (hereinafter referred to as “third gas”) may be any kind of gas as long as the oxygen concentration is lower than that of the atmosphere. Specific examples of the third gas include an inert gas (for example, nitrogen gas). The third gas supply unit 100 supplies the third gas so that the periphery of the chamber 70 is filled with the third gas in the upper region V1 (so that the periphery of the chamber 70 is in a hypoxic state). The third gas supply unit 100 includes, for example, a head unit 102, a supply path 104, a gas source 106, and an on-off valve 108.

The head portion 102 is provided above the chamber 70 (cover portion 74). The head portion 102 is arranged between the chamber 70 and the cooling treatment section 30 in the direction in which the heat treatment section 50 and the cooling treatment section 30 are arranged side by side. As shown in FIG. 7, the head portion 102 is formed in a rod shape so as to extend along a direction in which the heat treatment section 50 and the cooling treatment section 30 are arranged and orthogonal to the vertical direction. The shape of the head portion 102 in the cross section orthogonal to the extending direction is a quadrangle (for example, a square). A discharge space extending in the extending direction is formed in the head portion 102. On one side surface of the head portion 102 (the side surface of the head portion 102 opposite to the side surface facing the cooling processing portion 30), a plurality of discharge holes 102a penetrating between the discharge space and the upper region V1 are formed. ing. The plurality of discharge holes 102a are arranged at predetermined intervals along the extending direction of the head portion 102.

The plurality of discharge holes 102a are connected to the supply path 104 via the discharge space in the head portion 102. The gas source 106, which is a supply source of the third gas, supplies the third gas to the discharge space in the head portion 102 via the supply path 104. The on-off valve 108 is provided in the supply path 104, and switches the open / closed state of the supply path 104. When the on-off valve 108 is in the open state, the third gas is supplied (discharged) from the plurality of discharge holes 102a, and when the on-off valve 108 is in the closed state, the third gas is supplied from the plurality of discharge holes 102a. Stops.

As described above, in the heat treatment unit U2 exemplified in FIG. 3, a gas supply unit 40 is provided in order to bring the periphery of the work W into a low oxygen state in the cooling treatment, and the periphery of the work W is in a low oxygen state in the heat treatment. A first gas supply unit 80, a second gas supply unit 90, and a third gas supply unit 100 are provided. The first gas, the second gas, the third gas, and the low oxygen gas from the gas supply unit 40 (hereinafter, referred to as “fourth gas”) may be the same type of gas as each other. When the same type of gas is used, the concentrations of the main components (for example, nitrogen) of the hypoxic gas may be the same or different from each other. When gas of the same type and the same concentration of the principal component is used, the four gas supply units may share one gas source.

The heat treatment unit 50 further includes an exhaust unit that exhausts the treatment space S in order to recover the sublimated material generated during the heat treatment of the work W or to keep the treatment space S in a low oxygen state. Specifically, as shown in FIG. 4, the heat treatment unit 50 further includes a first exhaust unit 110 and a second exhaust unit 150.

The first exhaust unit 110 (exhaust unit) discharges the gas existing in the processing space S to the outside of the processing space S (outside the housing 22). The first exhaust unit 110 exhausts the processing space S with an exhaust amount (gas discharge amount per unit time) larger than the supply amount (supply amount per unit time) of the first gas from the first gas supply unit 80. It is configured to be possible. The first exhaust unit 110 has, for example, an outer peripheral exhaust unit 120, a central exhaust unit 130, and a peripheral exhaust unit 140.

The outer peripheral exhaust portion 120 exhausts the processing space S from the outer peripheral region outside the peripheral edge Wc of the work W supported by the heating portion 52 (hot plate 54). The outer peripheral exhaust unit 120 has, for example, a plurality of exhaust holes 122, an exhaust passage 124, and an on-off valve 126. The plurality of exhaust holes 122 are provided on the outside of the first gas supply unit 80, and the outer peripheral exhaust unit 120 is a processing space on the outer periphery of the processing space S via the plurality of exhaust holes 122 and the exhaust passage 124. The gas in S is discharged from above the processing space S to the outside of the housing 22. The plurality of exhaust holes 122 are provided on the outside of the head portion 82 of the first gas supply portion 80, as illustrated in FIG.

The plurality of exhaust holes 122 are provided in the top plate 76 of the lid portion 74, and are open to the outer peripheral portion of the lower surface of the top plate 76 (that is, the outer peripheral portion of the upper surface of the processing space S). The plurality of exhaust holes 122 are arranged in an annular shape on the outside of the head portion 82. The plurality of exhaust holes 122 are located outside the peripheral edge Wc of the work W on the hot plate 54 when viewed from above. In other words, the plurality of exhaust holes 122 do not overlap with the work W on the hot plate 54 when viewed from above. The shape of the exhaust hole 122 in the top plate 76 is not particularly limited.

An exhaust pump is provided in the exhaust passage 124, and the gas in the processing space S is discharged to the outside of the housing 22 through the plurality of exhaust holes 122 by the suction of the exhaust pump. The on-off valve 126 is provided in the exhaust passage 124, and switches the open / closed state of the exhaust passage 124. When the on-off valve 126 is in the open state, the gas in the processing space S is discharged from the plurality of exhaust holes 122, and when the on-off valve 126 is in the closed state, the gas in the processing space S via the plurality of exhaust holes 122 is discharged. The exhaust of gas stops.

The central exhaust unit 130 discharges the gas in the processing space S upward from the central region inside the peripheral edge Wc of the work W supported by the heating unit 52. Seen from above, the outer edge of the central region is defined by, for example, a circle having a radius of about half the radius of the work W. However, the central region is not limited to the above, and for example, the central exhaust portion 130 may be used to exhaust air from the outside of about half the radius of the work W. The central exhaust unit 130 has, for example, an exhaust hole 132, an exhaust passage 134, and an on-off valve 136.

The exhaust hole 132 is provided in the head portion 82 of the first gas supply portion 80, and the central CP of the hot plate 54 is located in the exhaust hole 132. As illustrated in FIG. 5, the center of the exhaust hole 132 may substantially coincide with the center CP of the hot plate 54. Alternatively, the center of the exhaust hole 132 may be eccentric with respect to the center CP of the hot plate 54 in the central region. The central exhaust portion 130 may have a plurality of exhaust holes provided in a region of the head portion 82 facing the central region in place of or in addition to one exhaust hole 132. The plurality of exhaust holes (for example, four exhaust holes) may be arranged at equal intervals along the circumferential direction around the central CP.

The exhaust hole 132 is provided in the head portion 82 so as to open into the processing space S. Specifically, the exhaust hole 132 is provided in the top plate 76 including the head portion 82, and is opened in the central portion of the lower surface of the top plate 76. The shape of the exhaust hole 132 in the top plate 76 including the head portion 82 is not particularly limited. As an example, when viewed from the vertical direction, the shape of the exhaust hole 132 is a circle or an ellipse. The size (diameter) of the exhaust hole 132 may be larger than the size (diameter) of the discharge hole 82a of the first gas supply unit 80, or may be larger than the exhaust hole 132 of the outer peripheral exhaust unit 120. The central exhaust unit 130 discharges the gas in the processing space S from above the processing space S to the outside of the housing 22 in the central region of the processing space S through the exhaust holes 132 and the exhaust passage 134.

An exhaust pump is provided in the exhaust passage 134, and the gas in the processing space S is discharged to the outside of the housing 22 through the exhaust hole 132 by suction of the exhaust pump. The on-off valve 136 is provided in the exhaust passage 134, and switches the open / closed state of the exhaust passage 134. When the on-off valve 136 is in the open state, the gas in the processing space S is discharged from the exhaust hole 132, and when the on-off valve 136 is in the closed state, the gas in the processing space S is discharged through the exhaust hole 132. Stops.

The peripheral exhaust portion 140 exhausts the processing space S from the gap g1 between the peripheral wall portion 72 and the heating portion 52 (hot plate 54). The peripheral exhaust portion 140 discharges the gas in the processing space S from the upper end portion (the end portion that opens into the processing space S) of the gap g1. As shown in FIG. 6, the peripheral exhaust portion 140 has, for example, exhaust passages 142 and 144 and an on-off valve 146.

The exhaust passage 142 is provided inside the peripheral wall portion 72, and is formed in an annular shape so as to extend along the circumferential direction around the central CP of the hot plate 54. The gap g1 and the exhaust passage 142 are connected by a plurality of exhaust holes 142a opened in the gap g1. The plurality of exhaust holes 142a are provided on the inner peripheral surface of the peripheral wall portion 72, and are arranged at predetermined intervals along the circumferential direction. Inside the peripheral wall portion 72, the exhaust passage 142 is arranged below the supply passage 92b of the second gas supply portion 90. The supply path 92b and the exhaust path 142 may be arranged in close proximity to each other. For example, the supply passage 92b and the exhaust passage 142 are arranged to such an extent that the temperature of the second gas supplied to the gap g2 through the supply passage 92b and the discharge hole 92a rises due to the exhaust gas through the exhaust passage 142.

The exhaust passage 142 inside the peripheral wall portion 72 is connected to an exhaust passage 144 extending to the outside of the peripheral wall portion 72. An exhaust pump is provided in the exhaust passage 144, and the gas in the processing space S is discharged to the outside of the housing 22 through the gap g1 and the exhaust passages 142 and 144 by the suction of the exhaust pump. The on-off valve 146 is provided in the exhaust passage 144. When the on-off valve 146 is in the open state, the gas in the processing space S is discharged from the gap g1, and when the on-off valve 146 is in the closed state, the outflow of the gas in the processing space S through the gap g1 is stopped. ..

In the first exhaust unit 110 exemplified above, the total displacement of the outer peripheral exhaust unit 120 and the peripheral exhaust unit 140 is larger than the supply amount of the first gas from the first gas supply unit 80, and the first gas It is configured to be smaller than the sum of the supply amount and the supply amount of the second gas from the second gas supply unit 90. Further, the first exhaust section 110 is configured such that the total displacement of the outer peripheral exhaust section 120, the central exhaust section 130 and the peripheral exhaust section 140 is larger than the sum of the supply amounts of the first gas and the second gas. ing.

As shown in FIG. 4, the second exhaust unit 150 (pin exhaust unit) is configured so that the processing space S can be exhausted from a plurality of through holes 52a into which a plurality of support pins 62 for raising and lowering the work W are inserted. Has been done. Since the work W is placed on the support surface 54a of the hot plate 54 while the work W is being heated, the plurality of through holes 52a are closed by the work W. Therefore, when the work W is located above the support surface 54a, the processing space S can be exhausted by the second exhaust unit 150. The second exhaust unit 150 has, for example, a plurality of individual exhaust passages 152, a common exhaust passage 154, and an on-off valve 156.

The plurality of individual exhaust passages 152 are arranged below the heating portion 52 (support bottom wall 58) and are individually connected to the plurality of through holes 52a. The individual exhaust passage 152 of one of the plurality of individual exhaust passages 152 is connected to the through hole 52a (corresponding through hole 52a) of one of the plurality of through holes 52a. The common exhaust passage 154 is connected to a plurality of individual exhaust passages 152. The gas discharged by the second exhaust section 150 passes through each of the plurality of individual exhaust passages 152, joins the common exhaust passage 154, and then flows out of the housing 22.

An exhaust pump is provided in the common exhaust passage 154, and the suction of the exhaust pump enables the gas in the processing space S to be discharged to the outside of the housing 22 through the plurality of through holes 52a. The on-off valve 156 is provided in the common exhaust passage 154, and switches the open / closed state of the common exhaust passage 154. When the open / close valve 156 is in the open state when the work W is not placed on the support surface 54a of the hot plate 54, the gas in the processing space S is discharged from the plurality of through holes 52a, and the open / close valve 126 is opened. When in the closed state, the discharge of gas in the processing space S through the plurality of through holes 52a is stopped.

Here, with reference to FIG. 8, an example of an exhaust passage forming portion forming one individual exhaust passage 152 will be described. As shown in FIG. 8, the individual exhaust passage 152 is connected to the corresponding through hole 52a, and is connected to the first region 152a extending downward (for example, vertically downward) from the through hole 52a and the first region 152a. A second region 152b extending along a direction (for example, a horizontal direction) intersecting the extending direction of the first region 152a is included. Further, the second exhaust passage unit 150 further includes a first exhaust passage forming portion 162 forming the first region 152a and a second exhaust passage forming portion 166 forming the second region 152b.

The first exhaust passage forming portion 162 is formed in a cylindrical shape (for example, a cylindrical shape) and extends in the vertical direction. The upper end of the first exhaust passage forming portion 162 is connected (fixed) to the lower surface of the support bottom wall 58. When viewed from the vertical direction, the first exhaust passage forming portion 162 is arranged so as to surround the outer edge of the corresponding through hole 52a. A part of the first exhaust passage forming portion 162 (for example, an intermediate portion in the vertical direction) includes a bellows 164 that can be expanded and contracted along the extending direction of the first region 152a. By including the bellows 164 in the first exhaust passage forming portion 162, the first exhaust passage forming portion 162 expands and contracts in the vertical direction, and is between the support bottom wall 58 and the upper end of the first exhaust passage forming portion 162. Adhesion is maintained. One end of the second exhaust passage forming portion 166 is connected to the lower end of the first exhaust passage forming portion 162.

The second exhaust passage forming portion 166 is formed in a cylindrical shape (for example, a square tubular shape) and extends along the horizontal direction. The second exhaust passage forming portion 166 is provided on the bottom plate 24 that separates the upper region V1 and the lower region V2. The second exhaust passage forming portion 166 includes a bottom portion 168 facing (or contacting) the bottom plate 24. At one end of the second exhaust passage forming portion 166 (the connecting portion with the first exhaust passage forming portion 162), a connection hole 168a is formed in the bottom portion 168. The connection hole 168a is provided at a position overlapping the through hole 52a and the through hole 24a of the bottom plate 24. One support pin 62 is inserted into the connection hole 168a and the through hole 24a in addition to the through hole 52a. Further, the support pin 62 is arranged in the first region 152a along the extending direction of the first region 152a.

The connection hole 168a is, for example, circular, and the size (diameter) of the opening of the connection hole 168a is larger than the diameter of the support pin 62. When the size of the opening of the connection hole 168a is larger than the diameter of the support pin 62, the support pin 62 can be displaced in the horizontal direction. For example, the size of the opening of the connection hole 168a is set to about 1.5 to 3 times that of the support pin 62. The size of the through hole 24a connecting the upper region V1 and the lower region V2 is larger than the size of the connection hole 168a. In the above configuration of the exhaust passage forming portion, since a gap is formed between the support pin 62 and the inner peripheral surface of the connection hole 168a, gas can flow from the lower region V2 into the individual exhaust passage 152.

In order to suppress the inflow of gas from the lower region V2, the second exhaust portion 150 further includes a sealing member 170 that closes the connection hole 168a. The sealing member 170 is arranged on the bottom 168 so as to cover the connection hole 168a from above around the support pin 62. The sealing member 170 is formed, for example, in a circular shape or a polygonal shape in a plan view, and has an insertion hole 170a into which a support pin 62 is inserted at substantially the center thereof. The insertion hole 170a is set to be smaller than the diameter of the connection hole 168a and slightly larger than the diameter of the support pin 62.

The sealing member 170 is movable with respect to the connection hole 168a, and moves with the horizontal displacement of the support pin 62. The outer diameter (width) of the sealing member 170 is larger than that of the connection hole 168a, and is set to such an extent that the support pin 62 can cover the connection hole 168a even if it is displaced horizontally in the connection hole 168a. .. At the end of the second exhaust passage forming portion 166 where the sealing member 170 is arranged, a regulating portion for restricting the movement of the sealing member 170 in the vertical direction may be provided, and the bottom portion 168 may be provided. A part (a part where the connection hole 168a is provided) may be located above the other part.

Returning to FIG. 3, the transport unit 190 that transports the work W between the cooling treatment unit 30 and the heat treatment unit 50 has, for example, a holding arm 192 and a horizontal drive unit 194. The holding arm 192 is arranged above the cooling plate 32 and the heating portion 52 in the upper region V1 and holds the work W horizontally. The holding arm 192 is configured so that the work W can be transferred to and from the plurality of support pins 36 or the plurality of support pins 62.

The horizontal drive unit 194 is arranged in the lower region V2, and the holding arm 192 is moved along the direction in which the cooling processing unit 30 and the heat processing unit 50 are aligned by a power source such as an electric motor. The horizontal drive unit 194 has a holding arm 192 between a position where the holding arm 192 is arranged vertically above the cooling plate 32 and a position where the holding arm 192 is arranged vertically above the heating unit 52 (hot plate 54). To move.

(Control device)
The control device 200 controls the coating / developing device 2 including the heat treatment unit U2. As shown in FIG. 2, the control device 200 has a storage unit 202 and a control unit 204 as a functional configuration. The storage unit 202 stores a program for operating each unit of the coating / developing device 2 including the heat treatment unit U2. The storage unit 202 also stores various data (for example, information related to an instruction signal for operating the heat treatment unit U2) and information from sensors and the like provided in each unit. The storage unit 202 is, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an optical magnetic recording disk. The program may also be included in an external storage device separate from the storage unit 202, or an intangible medium such as a propagating signal. The program may be installed in the storage unit 202 from these other media, and the program may be stored in the storage unit 202. The control unit 204 controls the operation of each unit of the coating / developing device 2 based on the program read from the storage unit 202.

The control device 200 is composed of one or a plurality of control computers. For example, the control device 200 has the circuit 210 shown in FIG. The circuit 210 has one or more processors 212, a memory 214, a storage 216, a timer 222, and an input / output port 218. The storage 216 has a storage medium readable by a computer, such as a hard disk. The storage medium stores a program for causing the control device 200 to execute the heat treatment method described later. The storage medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk. The memory 214 temporarily stores the program loaded from the storage medium of the storage 216 and the calculation result by the processor 212. The processor 212 constitutes each of the above-mentioned functional modules by executing the above program in cooperation with the memory 214. The timer 222 measures the elapsed time, for example, by counting a reference pulse having a fixed cycle. The input / output port 218 inputs / outputs an electric signal to / from the heat treatment unit U2 according to a command from the processor 212.

The hardware configuration of the control device 200 is not necessarily limited to that constituting each functional module by a program. For example, each functional module of the control device 200 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) in which the logic circuit is integrated.

[Board processing method]
Subsequently, the heat treatment method executed in the heat treatment unit U2 will be described as an example of the substrate processing method with reference to FIGS. 10 to 15. FIG. 10 is a flowchart showing an example of a heat treatment method for one work W. First, in a state where the supply of the low oxygen gas and the exhaust from the exhaust unit are stopped, the control unit 204 of the control device 200 carries the work W to be processed into the heat treatment unit U2 and the transfer device A3 and the heat treatment unit U2. Is controlled (step S11). For example, the control unit 204 controls the transfer device A3 and the work elevating unit 34 so that the work W is delivered from the transfer device A3 to the plurality of support pins 36 of the cooling processing unit 30. Then, the control unit 204 moves the shutter 26 by the shutter drive unit 28 to close the carry-in inlet 22a, so that the inside of the heat treatment unit U2 is sealed.

Next, the control unit 204 controls a plurality of gas supply units so as to start supplying the low oxygen gas into the heat treatment unit U2 (step S12). Specifically, the control unit 204 opens / closes the opening / closing valve 48 of the gas supply unit 40, the opening / closing valve 88 of the first gas supply unit 80, the opening / closing valve 98 of the second gas supply unit 90, and the third gas supply unit 100. The valve 108 is switched from the closed state to the open state. As a result, as shown in FIG. 12A, the low oxygen gas Gd begins to be supplied into the upper region V1 of the heat treatment unit U2, and the oxygen concentration in the heat treatment unit U2 (upper region V1) begins to decrease.

Next, the control unit 204 controls the first exhaust unit 110 and the second exhaust unit 150 so as to start exhaust from various exhaust units other than the central exhaust unit 130 of the first exhaust unit 110 (step S13). Specifically, the control unit 204 switches the opening / closing valve 126 of the outer peripheral exhaust unit 120, the opening / closing valve 146 of the peripheral exhaust unit 140, and the opening / closing valve 156 of the second exhaust unit 150 from the closed state to the open state. As a result, the processing space S can be exhausted from the exhaust hole 122 of the outer peripheral exhaust portion 120, the gap g1, and the plurality of through holes 52a.

Next, the control unit 204 transports the work W to be processed from the cooling treatment unit 30 to the heat treatment unit 50 by the work elevating unit 34 of the cooling treatment unit 30, the work elevating unit 60 of the heat treatment unit 50, and the transfer. The unit 190 is controlled (step S14). Specifically, as shown in FIG. 12B, the control unit 204 has the work W in the heating unit 52 (hot plate) in a state where the lid portion 74 is open (a state in which the processing space S is not formed). The work elevating portion 60, the transport portion 190, and the like are controlled so as to be placed on the support surface 54a) of the 54.

Next, the control unit 204 controls the heat treatment unit 50 so that the work W to be processed is heat-treated (step S15). The heat treatment unit 50 is controlled in advance so that the temperature of the hot plate 54 becomes a temperature suitable for the heat treatment. FIG. 11 shows an example of the heat treatment in step S15. In the heat treatment of step S15, for example, the control unit 204 moves the lid portion 74 downward by the elevating drive unit 68 so that the processing space S for the heat treatment is formed above the hot plate 54 (step). S21). As shown in FIG. 13A, the lid portion 74 descends to form the processing space S, so that heating of the work W is started.

The treatment space S is narrower than the region outside the chamber 70 in the upper region V1, and a low oxygen gas is supplied to the upper region V1 before the start of the heat treatment. Therefore, immediately after the processing space S is formed, the processing space S becomes in a low oxygen state to the extent that the coating film on the work W can obtain a desired etching resistance. Immediately after the processing space S is formed, in order to bring the processing space S into a sufficiently low oxygen state, the lid portion 74 is temporarily closed before the work W is carried into the heat treatment unit 50. Substitution of gas in the processing space S may be performed. After the lid portion 74 is lowered, the work W is placed on the hot plate 54, so that the processing space S is substantially exhausted by the outer peripheral exhaust portion 120 and the peripheral exhaust portion 140.

Next, the control unit 204 waits until a predetermined first heating time elapses after the lowering of the lid unit 74 is completed (step S22). The first heating time is stored in advance in the storage unit 202. The first heating time is set to such that the film on the work W solidifies to a predetermined level, and is set in advance to, for example, about several tens of seconds. By executing step S22, the exhaust by the peripheral exhaust section 120 and the peripheral exhaust section 140, the supply of the first gas from the first gas supply section 80 to the processing space S, and the gap g2 from the second gas supply section 90 The supply of the second gas is continued for the first heating time.

During execution in step S22, the total displacement (displacement amount of the first exhaust unit 110) by the peripheral exhaust unit 120 and the peripheral exhaust unit 140 is larger than the supply amount of the first gas by the first gas supply unit 80. In addition, the state is smaller than the sum of the supply amount and the supply amount of the second gas by the second gas supply unit 90 (hereinafter, referred to as "first state"). Since the displacement of the first exhaust unit 110 in this first state is larger than the supply amount of the first gas, if the processing space S is assumed to be a closed space, the processing space S is in a negative pressure state. In the chamber 70 of the present disclosure, since the processing space S and the outside of the processing space S are connected via the gap g2, gas is supplied to the processing space S through the gap g2 so as to eliminate the negative pressure state in the processing space S. Flows in. Since the displacement of the first exhaust unit 110 in this state is smaller than the sum of the supply amounts of the first gas and the second gas, a part of the second gas supplied from the second gas supply unit 90 has a gap g2. The inner end g21 of the gap flows into the processing space S, and the remaining portion flows out of the chamber 70 through the outer end g22 of the gap g2. Therefore, as shown in FIG. 13A, gas is discharged from the gap g2 into the space outside the chamber 70, and the inflow of gas from outside the chamber 70 into the processing space S is prevented. During the execution period of steps S21 and S22, the third gas is supplied from the third gas supply unit 100 to the periphery of the chamber 70.

Next, the control unit 204 controls the first exhaust unit 110 so as to start the exhaust of the processing space S from the central exhaust unit 130 while continuing the exhaust by the outer peripheral exhaust unit 120 and the peripheral exhaust unit 140. Step S23). Specifically, the control unit 204 switches the open / close valve 136 of the central exhaust unit 130 from the closed state to the open state. Since the work W is placed on the hot plate 54, the processing space S is substantially exhausted by the outer peripheral exhaust portion 120, the central exhaust portion 130, and the peripheral exhaust portion 140.

Next, the control unit 204 waits until a predetermined second heating time elapses after starting the exhaust from the central exhaust unit 130 (step S24). The second heating time is stored in advance in the storage unit 202. The second heating time is set to such that the film on the work W solidifies to a desired level in the heat treatment, and is set in advance to, for example, about several tens of seconds. The second heating time may be longer than the first heating time, and in one example, it is set to about 2 to 5 times the first heating time. By executing steps S23 and S24, exhaust by the outer peripheral exhaust unit 120, the central exhaust unit 130, and the peripheral exhaust unit 140, supply of the first gas from the first gas supply unit 80 to the processing space S, and supply of the second gas. The supply of the second gas from the portion 90 to the gap g2 is continued for the second heating time.

During the execution of step S24, the total displacement of the outer peripheral exhaust unit 120, the central exhaust unit 130, and the peripheral exhaust unit 140 (the displacement of the first exhaust unit 110) is the supply amount of the first gas and the supply of the second gas. It is considered to be a state larger than the sum of the quantities (hereinafter referred to as "second state"). In this case, substantially all of the second gas from the second gas supply unit 90 flows into the processing space S, and as shown in FIG. 13B, the gas further passes through the gap g2 from the outside of the chamber 70 into the processing space S. It flows in.

By executing the above steps S21 to S24, the control unit 204 exhausts the processing space S with an exhaust amount smaller than the sum of the supply amount of the first gas and the supply amount of the second gas. The first state is switched to the second state in which the processing space S is exhausted with an exhaust amount larger than the sum of the supply amount of the first gas and the supply amount of the second gas. Further, the control unit 204 uses the first exhaust unit 110 so that at least the outer peripheral exhaust unit 120 exhausts the processing space S in the first state and at least the processing space S is exhausted by the central exhaust unit 130 in the second state. Control.

Next, as shown in FIG. 14A, the control unit 204 raises the work W to an intermediate position while forming the processing space S (with the lid portion 74 lowered). 60 is controlled (step S25). Then, the control unit 204 waits until the predetermined collection time elapses after raising the work W to the intermediate position (step S26). The collection time is stored in advance in the storage unit 202. The recovery time is set to such an extent that the generation of sublimated matter from the coating film on the work W is sufficiently reduced by lowering the temperature of the work W heated by the hot plate 54. In one example, the recovery time is set to about several seconds to several tens of seconds. The intermediate position is set to such an extent that the sublimated material from the work W can be efficiently recovered by the outer peripheral exhaust unit 120 and the central exhaust unit 130.

The intermediate position is, for example, a delivery position where the work W is delivered between the transport portion 190 and the plurality of support pins 62 of the work elevating portion 60 in a state where the lid portion 74 is open, and the support surface 54a of the hot plate 54. It is set to the position (height position) between and. When the work W rises away from the hot plate 54 in the state where the processing space S is formed, the plurality of through holes 52a into which the plurality of support pins 62 are inserted are connected to the processing space S. Since the second exhaust unit 150 continues exhausting through the plurality of through holes 52a, the processing space S is further exhausted through the plurality of through holes 52a.

Next, the control unit 204 controls the first exhaust unit 110 so as to stop the exhaust by the central exhaust unit 130 (step S27). For example, the control unit 204 stops the discharge of gas from the exhaust hole 132 of the central exhaust unit 130 by switching the open / close valve 136 of the central exhaust unit 130 from the open state to the closed state.

Next, as shown in FIG. 14B, the control unit 204 opens the space on the hot plate 54 to the upper region V1 while holding the work W at the intermediate position by the plurality of support pins 62. As described above, the lid portion 74 is raised by the elevating drive portion 68 (step S28). Next, as shown in FIG. 15A, the control unit 204 raises the work W by the work elevating unit 60 to the delivery position where the work W is delivered to and from the transport unit 190 (step S29). .. As a result, the heat treatment in step S14 is completed.

Returning to FIG. 10, after the execution of step S15, the control unit 204 has the work elevating unit 34 and the heat treatment unit of the cooling treatment unit 30 so as to convey the work W to be processed from the heat treatment unit 50 to the cooling treatment unit 30. The work elevating unit 60 and the transport unit 190 of 50 are controlled (step S16). Specifically, as shown in FIG. 15B, the control unit 204 works so that the heat-treated work W is placed on the cooling plate 32 (support surface of the cooling plate 32). It controls the elevating unit 34, the transport unit 190, and the like.

Next, the control unit 204 waits until a predetermined cooling time elapses after the work W is placed on the cooling plate 32 (step S17). The cooling time is stored in advance in the storage unit 202, and is set to such an extent that the heat-treated work W is cooled to a desired temperature. By executing steps S16 and S17, the work W is cooled. Since the space around the cooling plate 32 is in a hypoxic state due to the supply of the fourth gas from the gas supply unit 40, the cooling process under low oxygen is executed.

Next, the control unit 204 controls a plurality of gas supply units so as to stop the supply of the low oxygen gas in the heat treatment unit U2 (step S18). Specifically, the control unit 204 opens / closes the opening / closing valve 48 of the gas supply unit 40, the opening / closing valve 88 of the first gas supply unit 80, the opening / closing valve 98 of the second gas supply unit 90, and the third gas supply unit 100. The valve 108 is switched from the open state to the closed state.

The control unit 204 controls the transfer device A3 and the heat treatment unit U2 so that the work W subjected to the heat treatment (heat treatment and cooling treatment) is carried out from the heat treatment unit U2 (step S19). For example, the control unit 204 moves the shutter 26 by the shutter drive unit 28 so that the carry-in inlet 22a is opened, and then the work W is delivered from the plurality of support pins 36 of the cooling processing unit 30 to the transfer device A3. The transport device A3 and the work elevating part 34 are controlled so as to be so.

As a result, a series of heat treatments for one work W is completed. The control unit 204 may sequentially execute the same processes as in steps S11 to S19 for each of the plurality of subsequent work Ws. The process of step S13 may be omitted for the second and subsequent work Ws.

[Effect of embodiment]
The heat treatment unit U2 according to the above embodiment has a gap g2 between the heating portion 52 that supports and heats the work W on which the film is formed, the peripheral wall portion 72 that surrounds the periphery of the heating portion 52, and the peripheral wall portion 72. A chamber 70 having a lid portion 74 that forms a processing space S on the heating portion 52 by covering the heating portion 52 with the heating portion 52 provided, a housing 22 accommodating the heating portion 52 and the chamber 70, and the atmosphere. The first gas supply unit 80 that supplies the first gas having a low oxygen concentration to the treatment space, the exhaust unit (first exhaust unit 110) that exhausts the treatment space with an exhaust amount larger than the supply amount of the first gas, and the atmosphere. A second gas supply unit 90 that supplies a second gas having a lower oxygen concentration to the gap g2 between the peripheral wall portion 72 and the lid portion 74, and a third gas having a lower oxygen concentration than the atmosphere are provided in the housing 22. A third gas supply unit 100 that supplies gas to the outside of the chamber 70 is provided.

In this heat treatment unit U2, the amount of exhaust gas by the first exhaust unit 110 is larger than the amount of supply of the first gas, so that the processing space S is exhausted so as to have a negative pressure. As a result, the sublimated material generated from the coating film due to the heating of the work W can be efficiently recovered. On the other hand, since the gap g2 is formed between the peripheral wall portion 72 and the lid portion 74, gas is drawn into the processing space S from the outside of the processing space S so as to eliminate the negative pressure state of the processing space S. Specifically, the second gas supplied from the second gas supply unit 90 to the gap g2 between the peripheral wall portion 72 and the lid portion 74 is drawn into the processing space S. Further, even when a gas larger than the supply amount of the second gas is drawn into the processing space S, the chamber 70 is in a hypoxic state by the second gas from the second gas supply unit 90 and the third gas supply unit 100. The outside gas is drawn into the processing space S. Therefore, even if the gas flows into the processing space S from the outside, the processing space S is maintained in a low oxygen state. Therefore, it is possible to achieve both efficient recovery of sublimated products and heat treatment in a low oxygen state.

As a method of performing heat treatment on the film of the work W under low oxygen, the amount of low oxygen gas supplied to the treatment space is adjusted so that the gas outside the chamber is not drawn into the treatment space, and the gas is discharged from the treatment space. It is possible to make it more than the amount. However, in this method, the sublimated material may leak out of the chamber through the gap between the peripheral edge portion and the lid portion in the state where the processing space is formed. In addition, the recovery of the sublimated material in the processing space becomes insufficient, and the sublimated material may leak out of the chamber when the processing space is opened. On the other hand, in the above configuration, since the displacement by the first exhaust unit 110 is larger than the supply amount of the first gas, the sublimated product can be efficiently recovered. Further, by supplying the second gas to the gap g2 between the peripheral wall portion 72 and the lid portion 74 and supplying the third gas to the outside of the processing space S, the processing space S is kept in a low oxygen state while being described above. It is possible to prevent the sublimated material from leaking to the outside of the chamber 70 through the gap g2.

In the above embodiment, the first exhaust unit 110 is supported by the outer peripheral exhaust unit 120 that exhausts the processing space S from the outer peripheral region outside the peripheral edge Wc of the work W supported by the heating unit 52, and the heating unit 52. It has a central exhaust portion 130 that exhausts the processing space S from the central region inside the peripheral edge Wc of the work W. In the pre-stage of the process in which the film formed on the surface Wa of the work W is solidified by heating, the film thickness due to the exhaust of the treatment space S is greatly affected, and in the latter stage of the process of solidification of the film, the film thickness due to the exhaust of the treatment space S is large. The effect on is small. In the above configuration, by switching the operation of the first exhaust unit 110, it is possible to exhaust from the outer peripheral region in the previous stage of the solidification process, and it is possible to suppress the influence on the film thickness caused by the exhaust of the processing space S. Further, in the latter stage of the solidification process in which the degree of influence on the film thickness is small, the sublimated material can be efficiently recovered because it can be exhausted from the central region. Therefore, it is possible to improve the in-plane uniformity of the film thickness while efficiently recovering the sublimated product.

In the above embodiment, the first gas supply unit 80 has a head unit 82 in which a plurality of discharge holes 82a scattered along a surface facing the work W supported by the heating unit 52 are formed. The first gas is supplied from the discharge hole 82a of the above toward the work W on the heating unit 52. In this case, since the first gas is uniformly supplied from the first gas supply unit 80 to the surface Wa of the work W, the influence of the first gas on the film thickness is made uniform. Therefore, it is possible to improve the in-plane uniformity of the film thickness.

In the above embodiment, the peripheral wall portion 72 is arranged with a gap g1 between the peripheral wall portion 72 and the heating portion 52. The first exhaust portion 110 has a peripheral exhaust portion 140 that exhausts the processing space S from the gap g1 between the peripheral wall portion 72 and the heating portion 52. In this case, it is possible to suppress an increase in the oxygen concentration in the processing space S due to the gas existing in the gap g1 between the heating portion 52 and the peripheral wall portion 72, and the heat treatment is performed more reliably in a low oxygen state. Is possible.

In the above embodiment, at least a part of the exhaust passage 142 included in the peripheral exhaust portion 140 and at least a part of the supply air passage (supply passage 92b) included in the second gas supply portion 90 are in close proximity to each other. It is arranged in. In this case, the temperature of the second gas supplied through the air supply path (supply path 92b) of the second gas supply section 90 rises, and the second gas from the second gas supply section 90 is sucked into the processing space S. It is possible to prevent the temperature of the processing space S from dropping due to this.

The heat treatment unit U2 according to the above embodiment has a plurality of support pins 62 individually inserted into a plurality of through holes 52a penetrating the heating portion 52 along the vertical direction, and a plurality of support pins 62 are moved up and down. A work elevating unit 60 having a drive unit 64 and a pin exhaust unit (second exhaust unit 150) for exhausting the processing space S from the plurality of through holes 52a are further provided. In this case, when the work W is separated from the heating portion 52, it is possible to suppress an increase in the oxygen concentration in the processing space S due to the gas from the through hole 52a into which the support pin 62 is inserted. The heat treatment can be performed more reliably in a low oxygen state.

In the above embodiment, the pin exhaust unit (second exhaust unit 150) is provided in the plurality of individual exhaust passages 152 individually connected to the plurality of through holes 52a below the heating unit 52 and in the plurality of individual exhaust passages 152. Includes a common exhaust channel 154 to be connected. In this case, the space of the pin exhaust portion can be saved as compared with the case where the exhaust space connected to the plurality of through holes 52a is provided below the heating portion 52 and the air is exhausted from the plurality of through holes 52a.

In the above embodiment, the individual exhaust passage 152 of the plurality of individual exhaust passages 152 has a first region 152a extending downward from the corresponding through hole 52a of the plurality of through holes 52a. Includes a second region 152b extending along a direction intersecting the extending direction of the first region 152a. The second exhaust passage portion 150 includes a first exhaust passage forming portion 162 forming the first region 152a and a second exhaust passage forming portion 166 forming the second region 152b. The support pin 62 of one of the plurality of support pins 62 is arranged in the first region 152a along the extending direction of the first region 152a in the one individual exhaust passage 152, and forms the second exhaust passage. It is inserted into a connection hole 168a provided in the bottom portion 168 of the portion 166. The first exhaust passage forming portion 162 includes a bellows 164 that can be expanded and contracted along the extending direction of the first region 152a. The second exhaust portion 150 includes a sealing member 170 that is arranged so as to close the connection hole 168a and is movable with respect to the connection hole 168a. In this case, the first region can be more reliably sealed by absorbing the contraction or expansion of the exhaust passage forming portion due to the temperature rise of the heating portion 52 by the bellows. Further, by closing the connection hole 168a provided at the bottom with a sealing member 170 movable with respect to the connection hole 168a, the support pin 62 can be moved within the connection hole 168a, and at low oxygen. It is possible to suppress the inflow of no gas into the processing space S through the connection hole 168a.

In the above embodiment, the coating film is a coating film formed by applying a treatment liquid to the surface Wa of the work W. In this case, it is possible to improve the characteristics of the coating film (for example, etching resistance) by heat treatment under low oxygen while efficiently recovering the sublimated product generated by the temperature rise of the coating film.

The coating / developing device 2 according to the above embodiment includes a heat treatment unit U2 and a control device 200 for controlling the heat treatment unit U2. The control device 200 supplies the first gas and the second gas from the first state in which the processing space S is exhausted with an exhaust amount smaller than the sum of the supply amount of the first gas and the supply amount of the second gas. The heat treatment unit U2 is controlled so as to switch to the second state of exhausting the processing space S with an exhaust amount larger than the sum of the amounts.

It tends to take time for the region outside the processing space S and the gap g2 in the housing 22 to reach a state where the oxygen concentration is as low as in the processing space S. However, if the heat treatment is started after waiting until the region outside the treatment space S and the gap g2 has a sufficiently low oxygen concentration, the efficiency (throughput) of the substrate treatment decreases. On the other hand, in the above configuration, in the first state, the processing space S is exhausted with an exhaust amount that does not allow gas other than the second gas from the second gas supply unit 90 to enter the processing space S. Then, in the second state after switching from the first state, the gas in a sufficiently low oxygen state can be drawn into the processing space S from the gap g2 and the region outside the processing space S. Therefore, it is possible to improve the efficiency of substrate processing including heat treatment under low oxygen.

In the above embodiment, in the control device 200, the processing space S is exhausted by at least the outer peripheral exhaust unit 120 in the first state, and the processing space S is exhausted by at least the central exhaust unit 130 in the second state. The exhaust unit 110 is controlled. In the pre-stage of the process of solidifying the film on the surface Wa of the work W with heating, the influence of the exhaust gas of the processing space S on the film thickness is large, and in the latter stage of the solidification process, the influence of the exhaust gas on the film thickness is small. In the above configuration, by exhausting the processing space S from the outer peripheral region in the first state in the first stage of the solidification process, the influence of the exhaust on the film thickness can be suppressed. On the other hand, in the latter stage of the solidification process in which the degree of influence on the film thickness is small, the processing space S can be exhausted from the central region in the second state, and the sublimated material can be efficiently recovered. Therefore, it is possible to improve the in-plane uniformity of the film thickness while efficiently recovering the sublimated product.

[Modification example]
The disclosure herein should be considered exemplary and not restrictive in all respects. Various omissions, substitutions, changes, etc. may be made to the above examples within the scope of the claims and the gist thereof.

The configuration of the first exhaust unit 110 is not limited to the above examples. The first exhaust unit 110 may be configured in any way as long as it is possible to exhaust the processing space S in a state where the work W on the hot plate 54 is placed. For example, the first exhaust unit 110 may not have at least one of the outer peripheral exhaust unit 120, the central exhaust unit 130, and the peripheral exhaust unit 140. The heat treatment unit 50 does not have to include the second exhaust unit 150.

In the above example, in the second state after switching from the first state, the processing space S is exhausted from the outer peripheral exhaust unit 120, the central exhaust unit 130, and the peripheral exhaust unit 140, but the exhaust method in the second state. Is not limited to this. In the second state, the exhaust from the central exhaust unit 130 may be performed without exhausting from at least one of the peripheral exhaust unit 120 and the peripheral exhaust unit 140.

The configuration of the second gas supply unit 90 is not limited to the above example. The second gas supply unit 90 may supply the second gas to the gap g2 from the gas discharge unit provided inside the side wall 78 of the lid portion 74 in place of or in addition to the inside of the peripheral wall portion 72. In the above example, the gap g2 is formed between the upper end of the peripheral wall portion 72 and the lower end of the side wall portion 78, but the side wall 78 covers the side of the peripheral wall portion 72, so that the inner peripheral surface and the peripheral wall portion of the side wall portion 78 are formed. A gap g2 may be formed between the outer peripheral surface of 72 and the outer peripheral surface of 72.

2 ... Coating / developing device, U2 ... Heat treatment unit, W ... Work, 52 ... Heating part, 52a ... Through hole, 60 ... Work elevating part, 62 ... Support pin, 64 ... Elevating drive part, 70 ... Chamber, 72 ... Peripheral wall Unit, 74 ... lid, S ... processing space, g1, g2 ... gap, 80 ... first gas supply unit, 82 ... head unit, 82a ... discharge hole, 90 ... second gas supply unit, 100 ... third gas supply Unit, 110 ... 1st exhaust unit, 120 ... outer peripheral exhaust unit, 130 ... central exhaust unit, 140 ... peripheral exhaust unit, 150 ... second exhaust unit, 152 ... individual exhaust passage, 152a ... first region, 152b ... second Area 154 ... common exhaust passage, 162 ... first exhaust passage forming portion, 164 ... bellows, 166 ... second exhaust passage forming portion, 168 ... bottom, 168a ... connection hole, 170 ... sealing member, 200 ... control device.

Claims (13)

A heating part that supports and heats the substrate on which the film is formed,
A chamber having a peripheral wall portion that surrounds the periphery of the heating portion and a lid portion that forms a processing space on the heating portion by covering the heating portion with a gap provided between the peripheral wall portion.
A housing that houses the heating unit and the chamber,
A first gas supply unit that supplies a first gas having a lower oxygen concentration than the atmosphere to the processing space,
An exhaust unit that exhausts the processing space with an exhaust amount larger than the supply amount of the first gas,
A second gas supply unit that supplies a second gas having a lower oxygen concentration than the atmosphere to the gap between the peripheral wall portion and the lid portion,
A heat treatment unit including a third gas supply unit that supplies a third gas having a lower oxygen concentration than the atmosphere to the outside of the chamber inside the housing. The exhaust part is
An outer peripheral exhaust portion that exhausts the processing space from an outer peripheral region outside the peripheral edge of the substrate supported by the heating portion.
The heat treatment unit according to claim 1, further comprising a central exhaust portion that exhausts the processing space from a central region inside the peripheral edge of the substrate supported by the heating portion. The first gas supply unit has a head unit in which a plurality of discharge holes scattered along a surface facing the substrate supported by the heating unit are formed, and the heating unit is formed from the plurality of discharge holes. The heat treatment unit according to claim 1 or 2, wherein the first gas is supplied toward the substrate. The peripheral wall portion is arranged with a gap between the peripheral wall portion and the heating portion.
The heat treatment unit according to any one of claims 1 to 3, wherein the exhaust portion has a peripheral exhaust portion that exhausts the processing space from a gap between the peripheral wall portion and the heating portion. The fourth aspect of claim 4, wherein at least a part of the exhaust passage included in the peripheral exhaust portion and at least a part of the supply air passage included in the second gas supply portion are arranged in a state of being close to each other. Heat treatment unit. A substrate elevating part having a plurality of support pins individually inserted into a plurality of through holes penetrating the heating part along the vertical direction, and an elevating drive part for raising and lowering the plurality of support pins.
The heat treatment unit according to any one of claims 1 to 5, further comprising a pin exhaust unit for exhausting the processing space from the plurality of through holes. 6. The pin exhaust portion includes a plurality of individual exhaust passages individually connected to the plurality of through holes below the heating portion, and a common exhaust passage connected to the plurality of individual exhaust passages, claim 6. The heat treatment unit described in. The individual exhaust passage of one of the plurality of individual exhaust passages has a first region extending downward from the corresponding one through hole of the plurality of through holes and a extending direction of the first region. Includes a second region extending along the intersecting direction
The pin exhaust portion includes a first exhaust passage forming portion forming the first region and a second exhaust passage forming portion forming the second region.
One of the plurality of support pins is arranged in the first region along the extending direction of the first region in the one individual exhaust passage, and the second exhaust passage forming portion is formed. It is inserted into the connection hole provided at the bottom of the
The first exhaust passage forming portion includes a bellows that can be expanded and contracted along the extending direction of the first region.
The heat treatment unit according to claim 7, wherein the pin exhaust unit is arranged so as to close the connection hole and includes a sealing member movable with respect to the connection hole. The heat treatment unit according to any one of claims 1 to 8, wherein the coating film is a coating film formed by applying a treatment liquid to the surface of the substrate. The heat treatment unit according to claim 1 and
A control unit for controlling the heat treatment unit is provided.
The control unit has the supply amount of the first gas and the first gas from the first state in which the processing space is exhausted with an exhaust amount smaller than the sum of the supply amount of the first gas and the supply amount of the second gas. 2 A substrate processing apparatus that controls the heat treatment unit so as to switch to a second state of exhausting the processing space with an exhaust amount larger than the total amount of gas supplied. The exhaust portion includes an outer peripheral exhaust portion that exhausts the processing space from an outer peripheral region outside the peripheral edge of the substrate supported by the heating portion, and a center inside the peripheral edge of the substrate supported by the heating portion. It has a central exhaust section that exhausts the processing space from the area.
The control unit controls the exhaust unit so that the processing space is exhausted by at least the outer peripheral exhaust unit in the first state, and the processing space is exhausted by at least the central exhaust unit in the second state. , The substrate processing apparatus according to claim 10. In a processing space formed on the heating portion by a chamber having a peripheral wall portion surrounding the periphery of the heating portion and a lid portion arranged with a gap between the peripheral wall portion, the heating portion is used to coat the coating. By heating the substrate on which it was formed,
Supplying the first gas, which has a lower oxygen concentration than the atmosphere, to the processing space,
Exhausting the processing space with an exhaust amount larger than the supply amount of the first gas,
Supplying a second gas having a lower oxygen concentration than the atmosphere to the gap between the peripheral wall portion and the lid portion, and
A heat treatment method comprising supplying a third gas having a oxygen concentration lower than that of the atmosphere to the outside of the chamber in a housing accommodating the heating unit and the chamber. A computer-readable storage medium in which a program for causing an apparatus to execute the heat treatment method according to claim 12 is stored.

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