TW202343820A - System and method for processing micro light-emitting devices - Google Patents
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Abstract
Description
本發明是有關於一種用於處理發光元件的系統及方法,且特別是有關於一種用於處理微型發光元件的系統及方法。The present invention relates to a system and method for processing light-emitting elements, and in particular, to a system and method for processing micro-light-emitting elements.
微型發光元件(micro light emitting diode;Micro-LED)顯示裝置具有省電、高效率、高亮度及反應時間快等優點。由於微型發光元件的尺寸極小,目前製作微型發光元件顯示裝置的方法是採用巨量轉移(Mass Transfer)技術,亦即利用微機電陣列技術進行微型發光元件的取放,以將大量的微型發光元件一次搬運到具有畫素電路的驅動基板上。目前持續有各種新的巨量轉移技術被發表,其中雷射轉移技術因具有效率上的優勢而獲青睞。Micro light emitting diode (Micro-LED) display devices have the advantages of power saving, high efficiency, high brightness and fast response time. Since the size of micro-light-emitting elements is extremely small, the current method of manufacturing micro-light-emitting element display devices is to use mass transfer technology, that is, micro-electromechanical array technology is used to pick and place micro-light-emitting elements to transfer a large number of micro-light-emitting elements. Once transported to the drive circuit board with the pixel circuit. Currently, various new mass transfer technologies continue to be announced, among which laser transfer technology is favored due to its efficiency advantages.
雷射轉移技術藉由雷射光束與連接材發生光-物質反應而實現微型發光元件的分離,同時產生的衝擊力或驅動力可使微型發光元件脫離,並推動微型發光元件朝目標基板轉移。然而,由於雷射光束的照射範圍不夠精準,導致預期轉移的微型發光元件無法被精準地轉移至目標基板上,或是非預期轉移的微型發光元件被不當擊落或損傷,造成微型發光元件的轉移精準度降低。Laser transfer technology achieves the separation of micro-light-emitting components through a light-matter reaction between the laser beam and the connecting material. At the same time, the impact force or driving force generated can detach the micro-light-emitting components and push the micro-light-emitting components towards the target substrate. However, due to the inaccurate irradiation range of the laser beam, the intended transfer of micro-light-emitting elements cannot be accurately transferred to the target substrate, or the unintended transfer of micro-light-emitting elements may be improperly shot down or damaged, resulting in inaccurate transfer of micro-light-emitting elements. degree decreased.
本發明提供一種用於處理微型發光元件的系統,具有提高的微型發光元件的轉移精準度。The present invention provides a system for processing micro-light-emitting elements with improved transfer accuracy of micro-light-emitting elements.
本發明提供一種用於處理微型發光元件的方法,能夠提高微型發光元件的轉移精準度。The present invention provides a method for processing micro-light-emitting elements, which can improve the transfer accuracy of micro-light-emitting elements.
本發明的一個實施例提出一種用於處理微型發光元件的系統,包括:光源;第一光罩,位於所述光源下方,且具有多個第一開口;以及第二光罩,位於所述第一光罩下方,且具有多個第二開口,其中,所述多個第二開口分別重疊所述多個第一開口,所述第一開口的尺寸大於所述第二開口的尺寸,且所述第二開口的尺寸大於所述微型發光元件的尺寸。One embodiment of the present invention proposes a system for processing micro-light emitting elements, including: a light source; a first photomask located below the light source and having a plurality of first openings; and a second photomask located on the first Under a photomask, there are a plurality of second openings, wherein the plurality of second openings respectively overlap the plurality of first openings, the size of the first opening is larger than the size of the second opening, and the The size of the second opening is larger than the size of the micro-light emitting element.
在本發明的一實施例中,上述的第二開口的尺寸與微型發光元件的尺寸之差等於或大於10 μm,且小於或等於微型發光元件之間的間距。In an embodiment of the present invention, the difference between the size of the second opening and the size of the micro-light-emitting elements is equal to or greater than 10 μm, and is less than or equal to the spacing between the micro-light-emitting elements.
在本發明的一實施例中,上述的第二開口之間的間距為n個微型發光元件的尺寸加上(n+1)個微型發光元件之間的間距減去10 μm,其中n為自然數。In an embodiment of the present invention, the distance between the above-mentioned second openings is the size of n micro-light-emitting elements plus the distance between (n+1) micro-light-emitting elements minus 10 μm, where n is the natural Count.
在本發明的一實施例中,上述的光源發射光時,微型發光元件完全重疊第二開口。In an embodiment of the present invention, when the above-mentioned light source emits light, the micro-light-emitting element completely overlaps the second opening.
在本發明的一實施例中,上述的用於處理微型發光元件的系統還包括載板,承載微型發光元件,且載板位於微型發光元件與第二光罩之間。In an embodiment of the present invention, the above-mentioned system for processing micro-light-emitting elements further includes a carrier plate, which carries the micro-light-emitting elements, and the carrier plate is located between the micro-light-emitting elements and the second photomask.
在本發明的一實施例中,上述的第二光罩實體接觸載板。In an embodiment of the present invention, the above-mentioned second photomask physically contacts the carrier plate.
在本發明的一實施例中,上述的用於處理微型發光元件的系統還包括投影元件,位於第一光罩與第二光罩之間,且第一開口經投影元件縮小後的尺寸至少比微型發光元件的尺寸大30 μm。In an embodiment of the present invention, the above-mentioned system for processing micro-light-emitting elements further includes a projection element located between the first mask and the second mask, and the size of the first opening after being reduced by the projection element is at least larger than The size of the micro light-emitting element is 30 μm larger.
在本發明的一實施例中,上述的用於處理微型發光元件的系統還包括目標基板,且微型發光元件位於目標基板與第二光罩之間。In an embodiment of the present invention, the above-mentioned system for processing micro-light-emitting elements further includes a target substrate, and the micro-light-emitting elements are located between the target substrate and the second photomask.
在本發明的一實施例中,上述的目標基板還包括黏著層,且黏著層位於目標基板的面對微型發光元件的表面上。In an embodiment of the present invention, the above-mentioned target substrate further includes an adhesive layer, and the adhesive layer is located on a surface of the target substrate facing the micro-light-emitting element.
在本發明的一實施例中,上述的目標基板以第一速率持續移動。In an embodiment of the present invention, the above-mentioned target substrate continues to move at a first speed.
在本發明的一實施例中,上述的第二光罩及微型發光元件以第二速率短暫移動,且第二速率大於第一速率。In an embodiment of the present invention, the above-mentioned second photomask and micro-light-emitting element move briefly at a second speed, and the second speed is greater than the first speed.
本發明的一個實施例提出一種用於處理微型發光元件的方法,包括:步驟S1:設置光源、第一光罩、第二光罩以及多個微型發光元件,其中,第一光罩位於光源與第二光罩之間,第二光罩位於第一光罩與多個微型發光元件之間,第一光罩具有多個第一開口,第二光罩具有多個第二開口,且各微型發光元件完全重疊各第二開口;步驟S2:提供具有接收區域的目標基板,其中多個微型發光元件位於第二光罩與目標基板之間;以及步驟S3:當多個微型發光元件對準目標基板的接收區域時,使光源發射光。One embodiment of the present invention proposes a method for processing micro-light-emitting elements, including: step S1: setting a light source, a first photomask, a second photomask and a plurality of micro-light-emitting elements, wherein the first photomask is located between the light source and between the second photomask, the second photomask is located between the first photomask and the plurality of micro light-emitting elements, the first photomask has a plurality of first openings, the second photomask has a plurality of second openings, and each micro The light-emitting elements completely overlap each second opening; Step S2: Provide a target substrate with a receiving area, wherein a plurality of micro-light-emitting elements are located between the second mask and the target substrate; and Step S3: When the multiple micro-light-emitting elements are aligned with the target The light source is caused to emit light when in the receiving area of the substrate.
在本發明的一實施例中,當上述的目標基板以第一速率移動時,在步驟S3之後還包括:步驟S4:以第二速率移動第二光罩及多個微型發光元件,且第二速率大於第一速率;以及重複步驟S3。In an embodiment of the present invention, when the above-mentioned target substrate moves at a first speed, after step S3, it also includes: step S4: moving the second photomask and the plurality of micro-light-emitting elements at a second speed, and second The rate is greater than the first rate; and step S3 is repeated.
在本發明的一實施例中,上述的目標基板具有多個接收區域。In an embodiment of the present invention, the above-mentioned target substrate has multiple receiving areas.
在本發明的一實施例中,上述的目標基板位於以第一速率移動的載具上,且第一速率不大於100mm/s。In an embodiment of the present invention, the above-mentioned target substrate is located on a carrier moving at a first speed, and the first speed is not greater than 100 mm/s.
在本發明的一實施例中,上述的第二開口的尺寸與微型發光元件的尺寸之差除以第一速率為1.5x10 -4秒至2.5x10 -4秒。 In an embodiment of the present invention, the difference between the size of the second opening and the size of the micro-light-emitting element divided by the first rate is 1.5x10 -4 seconds to 2.5x10 -4 seconds.
在本發明的一實施例中,上述的多個微型發光元件位於載板上,且載板位於第二光罩與多個微型發光元件之間。In an embodiment of the present invention, the plurality of micro-light-emitting elements are located on a carrier, and the carrier is located between the second photomask and the plurality of micro-light-emitting elements.
在本發明的一實施例中,上述的第二光罩實體接觸載板。In an embodiment of the present invention, the above-mentioned second photomask physically contacts the carrier plate.
在本發明的一實施例中,上述的步驟S1還包括設置投影元件於第一光罩與第二光罩之間,且當光源發射光時,各第二開口完全重疊各第一開口經投影元件至第二光罩之投影。In an embodiment of the present invention, the above-mentioned step S1 also includes disposing a projection element between the first mask and the second mask, and when the light source emits light, each second opening completely overlaps each first opening and is projected Projection of the component onto the second mask.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.
在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。在整個說明書中,相同的附圖標記表示相同的元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反地,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本文所使用的,「連接」可以指物理及/或電性連接。再者,「電性連接」或「耦接」可為二元件間存在其它元件。In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout this specification, the same reference numbers refer to the same elements. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrical connection" or "coupling" can mean the presence of other components between two components.
應當理解,儘管術語「第一」、「第二」、「第三」等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、層及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的第一「元件」、「部件」、「區域」、「層」或「部分」可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections /or parts shall not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first "element", "component", "region", "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.
這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本文所使用的,除非內容清楚地指示,否則單數形式「一」、「一個」和「該」旨在包括複數形式,包括「至少一個」或表示「及/或」。如本文所使用的,術語「及/或」包括一個或多個相關所列項目的任何和所有組合。還應當理解,當在本說明書中使用時,術語「包含」及/或「包括」指定所述特徵、區域、整體、步驟、操作、元件及/或部件的存在,但不排除一個或多個其它特徵、區域、整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms including "at least one" or "and/or" unless the content clearly dictates otherwise. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will also be understood that when used in this specification, the terms "comprising" and/or "including" designate the presence of stated features, regions, integers, steps, operations, elements and/or parts, but do not exclude the presence of one or more The presence or addition of other features, regions, integers, steps, operations, elements, parts and/or combinations thereof.
此外,諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其他元件的「下」側的元件將被定向在其他元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件「下」或「下方」的元件將被定向為在其它元件「上方」。因此,示例性術語「下」或「下方」可以包括上方和下方的取向。Additionally, relative terms, such as "lower" or "bottom" and "upper" or "top," may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation illustrated in the figures. For example, if the device in one of the figures is turned over, elements described as "below" other elements would then be oriented "above" the other elements. Thus, the exemplary term "lower" may include both "lower" and "upper" orientations, depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "lower" or "lower" may include both upper and lower orientations.
考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制),本文使用的「約」、「近似」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值。例如,「約」可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的「約」、「近似」、或「實質上」可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "about," "approximately," or "substantially" includes the stated value and those within ordinary skill in the art, given the specific amount of error associated with the measurement in question (i.e., the limitations of the measurement system). An average within a range of acceptable deviations for a specific value determined by a person. For example, "about" may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the terms "approximately", "approximately", or "substantially" used in this article can be used to select a more acceptable deviation range or standard deviation based on optical properties, etching properties, or other properties, and one standard deviation does not apply to all. nature.
除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed to have meanings consistent with their meanings in the context of the relevant technology and the present invention, and are not to be construed as idealistic or excessive Formal meaning, unless expressly defined as such herein.
本文參考作為理想化實施例的示意圖的截面圖來描述示例性實施例。因此,可以預期到作為例如製造技術及/或公差的結果的圖示的形狀變化。因此,本文所述的實施例不應被解釋為限於如本文所示的區域的特定形狀,而是包括例如由製造導致的形狀偏差。例如,示出或描述為平坦的區域通常可以具有粗糙及/或非線性特徵。此外,所示的銳角可以是圓的。因此,圖中所示的區域本質上是示意性的,並且它們的形狀不是旨在示出區域的精確形狀,並且不是旨在限制權利要求的範圍。Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. Accordingly, variations in the shape of the illustrations, for example as a result of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, regions shown or described as flat may typically have rough and/or non-linear characteristics. Additionally, the acute angles shown may be rounded. Accordingly, the regions shown in the figures are schematic in nature and their shapes are not intended to show the precise shapes of the regions and are not intended to limit the scope of the claims.
圖1是依照本發明一實施例的用於處理微型發光元件120的系統10的剖面示意圖。在本實施例中,用於處理微型發光元件120的系統10包括:光源110;第一光罩130,位於光源110下方,且具有多個第一開口O1;以及第二光罩140,位於第一光罩130下方,且具有多個第二開口O2,其中,多個第二開口O2分別重疊多個第一開口O1,第一開口O1的尺寸W1大於第二開口O2的尺寸W2,且第二開口O2的尺寸W2大於微型發光元件120的尺寸Wd。FIG. 1 is a schematic cross-sectional view of a
在本發明的一實施例的用於處理微型發光元件120的系統10中,利用第一光罩130的第一開口O1搭配第二光罩140的第二開口O2來對光源110發出的光束112進行塑形,以進行微型發光元件120的轉移,能夠具有提高的微型發光元件120的轉移精準度。以下,配合圖1繼續說明用於處理微型發光元件的系統10的各個元件的實施方式,但本發明不以此為限。In the
在本實施例中,用於處理微型發光元件120的系統10可以是用於巨量轉移微型發光元件120的系統。多個微型發光元件120可被承載於載板CA上。舉例而言,被轉移的多個微型發光元件120可以生長於載板CA(例如藍寶石基板)上,且各個微型發光元件120可以藉由例如連接層BL固定於載板CA上,但不限於此。在一些實施例中,多個微型發光元件120可以是被從其他的生長基板轉移至載板CA之後藉由連接層BL固定於載板CA上。多個微型發光元件120可以規則(例如陣列)的方式排列於載板CA上,以便利轉移過程中的對位。In this embodiment, the
光源110可以提供光束112。在轉移多個微型發光元件120的過程中,多個微型發光元件120可以位於光源110的下方,以接收來自光源110的光束112,且光束112的能量能夠促使連接層BL發生例如燒蝕等光-物質反應,使得微型發光元件120能夠脫離載板CA。光源110的種類並無特別的限制,可以視連接層BL的材質而定。光源110可以是雷射光源。舉例而言,在本實施例中,光源110可為氣態雷射器,且光源110提供的光束112可以是例如約248nm的KrF、約353nm的XeF、約193nm的ArF、約308nm的XeCl、或約157nm的F
2的準分子雷射,但不限於此。在一些實施例中,光束112也可例如是提供約632.8nm的氦氖雷射、約1064nm的二氧化碳雷射、約6000nm至約8000nm的一氧化碳雷射、約337.1nm的氮氣雷射、約442nm的氦鎘雷射、金屬蒸氣雷射、金屬鹵化物雷射或混合氣體雷射。在一些實施例中,光束112可為Nd:YAG、Nd:YVO
4或Yb:YAG的固態雷射,其可提供約266nm、355nm、532nm的峰值波長(peakwavelength)。在某些實施例中,光源110可為鈦藍寶石雷射器,其可具有較寬的波長調節範圍,例如約670nm至約1200nm之間的波長。在其他實施例中,光源110可為摻有稀土元素的玻璃(SiO
2)光纖作為增益介質的光纖雷射器。
第一光罩130位於光源110下方,第一光罩130僅允許光束112通過其多個第一開口O1。換句話說,第一光罩130能夠藉由其多個第一開口O1來對光束112進行塑形。多個第一開口O1的排列方式並無特別限制。在本實施例中,多個第一開口O1可以以陣列的方式排列於第一光罩130中,但不限於此。在一些實施例中,多個第一開口O1可以以其他規則或不規則的方式排列於第一光罩130中。The
第一開口O1的形狀並無特別限制,且可以配合微型發光元件120的形狀進行調整。舉例而言,在本實施例中,第一開口O1可以具有矩形的輪廓,但不限於此。在一些實施例中,第一開口O1可以具有圓形、多邊形或其他不規則的形狀。第一開口O1可以具有尺寸W1,尺寸W1可以視需要進行調整,且尺寸W1至少需大於第二光罩140的第二開口O2的尺寸W2。The shape of the first opening O1 is not particularly limited and can be adjusted to match the shape of the
在本實施例中,第二光罩140可以位於第一光罩130的下方,且第一光罩130可以位於光源110與第二光罩140之間。另外,微型發光元件120可以位於第二光罩140下方,第二光罩140可以位於第一光罩130與微型發光元件120之間,且載板CA可以位於第二光罩140與微型發光元件120之間,第二光罩140可以實體接觸載板CA。In this embodiment, the
第二光罩140具有多個第二開口O2,且第二光罩140僅允許光束112通過其多個第二開口O2。第二光罩140能夠藉由其多個第二開口O2來對通過第一開口O1的光束112進行再次塑形,且僅允許通過第二開口O2的光束112抵達載板CA。當位於載板CA與微型發光元件120之間的連接層BL接收光束112而產生反應(例如燒蝕)時,可使微型發光元件120脫離載板CA。在本實施例中,藉由使各個第二開口O2僅重疊單個微型發光元件120,能夠使光束112通過第二開口O2之後的作用範圍侷限於單個微型發光元件120,藉以避免損傷鄰近的微型發光元件120。The second
第二開口O2的排列方式並無特別限制,且第二開口O2可配合預訂轉移的微型發光元件120進行設置。在本實施例中,多個第二開口O2可以以陣列的方式排列於第二光罩140中,但不限於此。在一些實施例中,多個第二開口O2可以以其他規則或不規則的方式排列於第二光罩140中。The arrangement of the second openings O2 is not particularly limited, and the second openings O2 can be arranged in conjunction with the micro-light-emitting
第二開口O2的形狀並無特別限制,且可以配合微型發光元件120的形狀進行調整。舉例而言,在本實施例中,第二開口O2可以具有矩形的輪廓,但不限於此。在一些實施例中,第二開口O2可以具有圓形、多邊形或其他不規則的形狀。The shape of the second opening O2 is not particularly limited and can be adjusted to match the shape of the micro light-emitting
第二開口O2可以具有尺寸W2,尺寸W2可以視需要進行調整,且尺寸W2至少需大於微型發光元件120的尺寸Wd。在一些實施例中,第二開口O2的尺寸W2至少比每一微型發光元件120的尺寸Wd大10μm,且尺寸W2與尺寸Wd之差應不大於微型發光元件120之間的間距W3,也就是說,10μm ≤(W2-Wd) ≤ W3。在一些實施例中,第二開口O2之間的間距W4可以是n個微型發光元件120的尺寸Wd加上(n+1)個微型發光元件120的間距W3減去10μm,也就是說,W4=(nWd+(n+1)W3-10μm),其中n為自然數。The second opening O2 may have a size W2, and the size W2 may be adjusted as needed, and the size W2 must be at least larger than the size Wd of the micro-light-emitting
在本實施例中,系統10可以將多個微型發光元件120同時轉移至目標基板TS上,因此,目標基板TS可以設置於微型發光元件120下方,且微型發光元件120可以位於第二光罩140與目標基板TS之間。在一些實施例中,目標基板TS面對微型發光元件120的表面F1上可以設置有黏著層GL,且被轉移至目標基板TS的微型發光元件120可以藉由黏著層GL固定於目標基板TS上。在某些實施例中,黏著層GL可以是導電膠,以使微型發光元件120電性連接至目標基板TS。In this embodiment, the
當光源110發射光束112時,微型發光元件120完全重疊第二開口O2,且第二開口O2完全重疊第一開口O1,如此一來,能夠精準地使預定轉移的微型發光元件120脫離載板CA而落至目標基板TS上。另外,在光源110發射光束112時,目標基板TS及黏著層GL上僅有重疊第二開口O2、但不重疊微型發光元件120的區域A1、A2會受到光束112的熱作用,因此,能夠精準控制目標基板TS以及黏著層GL受光束112影響的範圍,且使之最小化。When the
以下,使用圖2至圖4繼續說明本發明的其他實施例,並且,沿用圖1的實施例的元件標號與相關內容,其中,採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明,可參考圖1的實施例,在以下的說明中不再重述。Below, other embodiments of the present invention will be continued to be described using FIGS. 2 to 4 , and the component numbers and related content of the embodiment of FIG. 1 will be used. The same numbers will be used to represent the same or similar elements, and the same elements will be omitted. Description of technical content. For descriptions of omitted parts, reference may be made to the embodiment of FIG. 1 and will not be repeated in the following description.
圖2是依照本發明一實施例的用於處理微型發光元件120的系統20的剖面示意圖。用於處理微型發光元件120的系統20包括光源110、第一光罩130、第二光罩140、以及表面設置有黏著層GL的目標基板TS,且多個微型發光元件120位於載板CA上,載板CA位於第二光罩140與多個微型發光元件120之間。圖2所示的系統20與如圖1所示的系統10的主要差異在於:系統20還包括載具YB,且目標基板TS放置於載具YB上。載具YB可以以第一速率沿方向D1持續移動,使得目標基板TS也以第一速率沿方向D1持續移動。FIG. 2 is a schematic cross-sectional view of a system 20 for processing micro-light emitting
當系統20進行巨量轉移操作時,光源110可以接收來自例如控制器的訊號而發射光束112,隨後通過第一開口O1以及第二開口O2的光束112可以到達載板CA上的第一區域,使得在第一區域中的特定微型發光元件120脫離載板CA,而落至移動中的目標基板TS上。之後,第二光罩140、載板CA以及微型發光元件120可以第二速率移動而到達預定位置,接著,當光源110再次接收訊號而發射光束112時,光束112可以到達載板CA上的第二區域,且目標基板TS正好移動至準備接收微型發光元件120的位置。也就是說,可以使載板CA上第二區域中的微型發光元件120先到達預定位置,之後控制器再依目標基板TS到達接收微型發光元件120的位置的時間來控制光源110發射光束112。When the system 20 performs a mass transfer operation, the
在一些實施例中,第二光罩140、載板CA以及微型發光元件120可以在目標基板TS移動至準備接收微型發光元件120的位置之前以第二速率短暫移動到達預定位置,且第二光罩140、載板CA以及微型發光元件120到達預定位置之後可以停止一段時間,待光源110發射光束112之後再移動至下一個預定位置。在一些實施例中,第二速率可以大於第一速率,但不以此為限。In some embodiments, the
在一些實施例中,前述的第二區域可以鄰接第一區域,但不以此為限。在一些實施例中,第二光罩140、載板CA以及微型發光元件120可以沿方向D1移動。在某些實施例中,第二光罩140、載板CA以及微型發光元件120的移動方向可以不同於目標基板TS的移動方向D1。In some embodiments, the aforementioned second area may be adjacent to the first area, but is not limited to this. In some embodiments, the
另外,在一些實施例中,可以將第一開口O1的尺寸W1定義為第一開口O1在目標基板TS的移動方向D1上的最大長度。同樣地,可以將第二開口O2的尺寸W2定義為第二開口O2在目標基板TS的移動方向D1上的最大長度。在一些實施例中,當目標基板TS以第一速率R1移動時,第二開口O2的尺寸W2與微型發光元件120的尺寸Wd之差除以第一速率(即(W2-Wd)/R1)可以為1.5x10
-4秒至2.5x10
-4秒。換句話說,本實施例的系統20藉由第二開口O2的尺寸設計而能夠允許微型發光元件120的轉移有1.5x10
-4秒至2.5x10
-4秒的時間誤差。
In addition, in some embodiments, the size W1 of the first opening O1 may be defined as the maximum length of the first opening O1 in the moving direction D1 of the target substrate TS. Similarly, the size W2 of the second opening O2 may be defined as the maximum length of the second opening O2 in the moving direction D1 of the target substrate TS. In some embodiments, when the target substrate TS moves at the first speed R1, the difference between the size W2 of the second opening O2 and the size Wd of the
在一些實施例中,當目標基板TS以第一速率R1移動時,第一開口O1的尺寸W1與微型發光元件120的尺寸Wd之差(即(W1-Wd))可以隨著第一速率R1增加而增大,換句話說,(W1-Wd)與第一速率R1之間可以具有正比關係。舉例而言,如以下表一的實施例A所示,當目標基板TS靜止時,(W1-Wd)可以為約10μm。如實施例B所示,當目標基板TS以50 mm/s的速率移動時,(W1-Wd)可以為約20μm。如實施例C所示,當目標基板TS以100 mm/s的速率移動時,(W1-Wd)可以為約30μm。
圖3是依照本發明一實施例的用於處理微型發光元件的系統30的立體示意圖。用於處理微型發光元件的系統30包括光源110、第一光罩130、第二光罩140、以及表面設置有黏著層GL的目標基板TS,且多個微型發光元件120位於載板CA上,載板CA位於第二光罩140與多個微型發光元件120之間。圖3所示的系統30與如圖2所示的系統20的主要差異在於:系統30還包括投影元件PT,且投影元件PT可以設置於第一光罩130與第二光罩140之間。FIG. 3 is a three-dimensional schematic diagram of a system 30 for processing micro-light emitting devices according to an embodiment of the present invention. The system 30 for processing micro-light-emitting elements includes a
在本實施例中,光源110發射的光束112中僅光束114通過第一光罩130的第一開口O1。接著,光束114經投影元件PT縮小為光束116,接著,光束116再投射至第二光罩140而通過第二開口O2,其中,通過一個第一開口O1的光束114經投影元件PT縮小後的尺寸(也就是第一開口O1經投影元件PT的縮小倍率縮小後的尺寸)至少比微型發光元件120的尺寸大30μm,且第二開口O2的尺寸至少比微型發光元件120的尺寸大10μm。舉例而言,當微型發光元件120的尺寸為34μm*58μm時,第二開口O2的尺寸可為44μm*68μm,且通過一個第一開口O1的光束114經投影元件PT縮小後投射至第二光罩140的尺寸可約為64μm*88μm。假使投影元件PT的縮小倍率為1/3,則第一開口O1的尺寸可為192μm*264μm。如此一來,能夠便利第一光罩130的製作及操作。In this embodiment, only the light beam 114 of the light beam 112 emitted by the
圖4是依照本發明一實施例的用於處理微型發光元件的方法40的流程圖。以下將同時參照圖3以及圖4舉例說明依照本發明一實施例的用於處理微型發光元件的方法40。FIG. 4 is a flowchart of a method 40 for processing micro-light emitting devices according to an embodiment of the present invention. The following will illustrate a method 40 for processing micro-light emitting devices according to an embodiment of the present invention with reference to FIGS. 3 and 4 simultaneously.
在本實施例中,用於處理微型發光元件的方法40可以包括以下步驟。首先,在步驟S1設置光源110、第一光罩130、第二光罩140以及多個微型發光元件120,其中,第一光罩130位於光源110與第二光罩140之間,第二光罩140位於第一光罩130與多個微型發光元件120之間,第一光罩130具有多個第一開口O1,第二光罩140具有多個第二開口O2,且各微型發光元件120完全重疊各第二開口O2。In this embodiment, the method 40 for processing micro-light emitting elements may include the following steps. First, in step S1, the
在一些實施例中,多個微型發光元件120可以位於載板CA上,且載板CA可以位於第二光罩140與多個微型發光元件120之間。在一些實施例中,第二光罩140可以疊置於載板CA上且實體接觸載板CA。In some embodiments, the plurality of micro light-emitting
在本實施例中,在步驟S1還可以設置投影元件PT於第一光罩130與第二光罩140之間,藉以調整通過第一開口O1的光束投射至第二光罩140的尺寸。舉例而言,當光源110發射光束112時,通過第一開口O1的光束114可藉由投影元件PT縮小尺寸為光束116之後再投射至第二光罩140,且各第二開口O2可完全位於光束116於第二光罩140的投影內,因此,在此情況下,各第二開口O2可不重疊各第一開口O1。In this embodiment, in step S1, the projection element PT can also be disposed between the
接著,在步驟S2提供具有接收區域RA的目標基板TS,其中多個微型發光元件120位於第二光罩140與目標基板TS之間。在一些實施例中,目標基板TS面對微型發光元件120的表面上可以設置有黏著層GL。Next, in step S2, a target substrate TS having a receiving area RA is provided, in which a plurality of
接著,在步驟S3,當多個微型發光元件120對準目標基板TS的接收區域RA時,使光源110發射光束112。由於各微型發光元件120完全重疊各第二開口O2,且各第二開口O2完全重疊光束116於第二光罩140的投影,第二開口O2能夠將光束116的照射範圍精準地控制於各個預定轉移的微型發光元件120。如此一來,被光束116照射到的微型發光元件120可以脫離載板CA而精準地轉移至目標基板TS的接收區域RA,且藉由黏著層GL固定於目標基板TS上,而未與第二開口O2重疊的微型發光元件120則不會被光束116照射到而損傷或掉落,藉以提高微型發光元件120的轉移精準度。Next, in step S3, when the plurality of micro light-emitting
在一些實施例中,目標基板TS可以具有多個接收區域RA,且可以將目標基板TS放置於載具YB上,例如輸送帶上,當載具YB以第一速率移動時,可同時使目標基板TS以第一速率隨之移動,使得目標基板TS的多個接收區域RA可於不同時間點接收轉移的微型發光元件120。在一些實施例中,第一速率可以不大於100mm/s,例如50mm/s,但不限於此。In some embodiments, the target substrate TS may have multiple receiving areas RA, and the target substrate TS may be placed on a carrier YB, such as a conveyor belt. When the carrier YB moves at the first speed, the target substrate TS may be simultaneously The substrate TS moves accordingly at a first speed, so that the multiple receiving areas RA of the target substrate TS can receive the transferred micro-light-emitting
當目標基板TS以第一速率移動時,在步驟S3之後還可以包括:步驟S4:以第二速率移動第二光罩140及多個微型發光元件120,且第二速率大於第一速率;以及重複步驟S3。When the target substrate TS moves at the first speed, step S3 may also include: step S4: moving the
舉例而言,在一些實施例中,可以使用夾持工具(圖未式)夾持第二光罩140以及載板CA,並以第二速率移動第二光罩140以及載板CA。載板CA上的微型發光元件120可以分區進行轉移,且不同區的微型發光元件120可被分次轉移至目標基板TS上對應的接收區域RA。因此,第二速率並無特別限制,只要能夠在目標基板TS的預定接收區域RA對準載板CA上預定轉移的微型發光元件120之前使第二光罩140的第二開口O2完全落入光束116的投影範圍內即可。接著,可回到步驟S3,當載板CA上預定轉移的微型發光元件120對準目標基板TS的預定接收區域RA時,發送訊號使光源110發射光束112,即可使預定轉移的微型發光元件120脫離載板CA而轉移至目標基板TS的接收區域RA。For example, in some embodiments, a clamping tool (not shown) may be used to clamp the
綜上所述,本發明藉由使各個第二開口僅重疊單個微型發光元件,能夠精準控制通過第二開口的光束的作用範圍,進而避免損傷鄰近的微型發光元件。另外,本發明利用第一光罩的第一開口搭配第二光罩的第二開口來對光源發出的光束進行塑形以進行微型發光元件的巨量轉移,能夠提高微型發光元件的轉移精準度。To sum up, by making each second opening overlap only a single micro-light-emitting element, the present invention can accurately control the scope of the light beam passing through the second opening, thereby avoiding damage to adjacent micro-light-emitting elements. In addition, the present invention uses the first opening of the first mask and the second opening of the second mask to shape the light beam emitted by the light source to transfer a large amount of micro-light-emitting elements, which can improve the transfer accuracy of micro-light-emitting elements. .
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.
10,20,30:系統 40:方法 110:光源 112,114,116:光束 120:微型發光元件 130:第一光罩 140:第二光罩 A1,A2:區域 BL:連接層 CA:載板 D1:方向 GL:黏著層 O1:第一開口 O2:第二開口 PT:投影元件 F1:表面 RA:接收區域 S1~S4:步驟 TS:目標基板 W1,W2,Wd:尺寸 W3,W4:間距 YB:載具 10,20,30:System 40:Method 110:Light source 112,114,116:Beam 120:Micro light-emitting components 130: First mask 140: Second mask A1,A2:Area BL: connection layer CA: carrier board D1: direction GL: adhesive layer O1: First opening O2: Second opening PT: projection element F1: Surface RA: receiving area S1~S4: steps TS: target substrate W1,W2,Wd: size W3, W4: spacing YB: Vehicle
圖1是依照本發明一實施例的用於處理微型發光元件的系統10的剖面示意圖。
圖2是依照本發明一實施例的用於處理微型發光元件的系統20的剖面示意圖。
圖3是依照本發明一實施例的用於處理微型發光元件的系統30的立體示意圖。
圖4是依照本發明一實施例的用於處理微型發光元件的方法40的流程圖。
FIG. 1 is a schematic cross-sectional view of a
10:系統 10:System
110:光源 110:Light source
112:光束 112:Beam
120:微型發光元件 120:Micro light-emitting components
130:第一光罩 130: First mask
140:第二光罩 140: Second mask
A1,A2:區域 A1,A2:Area
BL:連接層 BL: connection layer
CA:載板 CA: carrier board
GL:黏著層 GL: adhesive layer
O1:第一開口 O1: First opening
O2:第二開口 O2: Second opening
F1:表面 F1: Surface
TS:目標基板 TS: target substrate
W1,W2,Wd:尺寸 W1,W2,Wd: size
W3,W4:間距 W3, W4: spacing
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