TW202342713A - Cleaning composition for metal mask and cleaning method using the same - Google Patents
Cleaning composition for metal mask and cleaning method using the same Download PDFInfo
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- TW202342713A TW202342713A TW112115614A TW112115614A TW202342713A TW 202342713 A TW202342713 A TW 202342713A TW 112115614 A TW112115614 A TW 112115614A TW 112115614 A TW112115614 A TW 112115614A TW 202342713 A TW202342713 A TW 202342713A
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- Prior art keywords
- cleaning
- metal mask
- composition
- metal
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- Prior art date
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- 238000004140 cleaning Methods 0.000 title claims abstract description 170
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 162
- 239000002184 metal Substances 0.000 title claims abstract description 162
- 239000000203 mixture Substances 0.000 title claims abstract description 124
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000002738 chelating agent Substances 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000005260 corrosion Methods 0.000 claims description 51
- 230000007797 corrosion Effects 0.000 claims description 51
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 30
- 229910045601 alloy Inorganic materials 0.000 claims description 28
- 239000000956 alloy Substances 0.000 claims description 28
- 239000003112 inhibitor Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- 239000012964 benzotriazole Substances 0.000 claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 21
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 21
- 229910001374 Invar Inorganic materials 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 12
- 239000011572 manganese Substances 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- -1 DTPMPA) Chemical compound 0.000 claims description 11
- 238000007598 dipping method Methods 0.000 claims description 9
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 9
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 229910001026 inconel Inorganic materials 0.000 claims description 6
- 229910000833 kovar Inorganic materials 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 claims description 4
- YSMRWXYRXBRSND-UHFFFAOYSA-N TOTP Chemical compound CC1=CC=CC=C1OP(=O)(OC=1C(=CC=CC=1)C)OC1=CC=CC=C1C YSMRWXYRXBRSND-UHFFFAOYSA-N 0.000 claims description 3
- JCXKHYLLVKZPKE-UHFFFAOYSA-N benzotriazol-1-amine Chemical compound C1=CC=C2N(N)N=NC2=C1 JCXKHYLLVKZPKE-UHFFFAOYSA-N 0.000 claims description 3
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 claims 2
- KATSEUSPUVTAAQ-UHFFFAOYSA-N 2h-benzotriazole;5-methyl-2h-benzotriazole Chemical compound C1=CC=C2NN=NC2=C1.CC1=CC=C2NN=NC2=C1 KATSEUSPUVTAAQ-UHFFFAOYSA-N 0.000 claims 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 21
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- 238000012360 testing method Methods 0.000 description 14
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- 238000012545 processing Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- VPTUPAVOBUEXMZ-UHFFFAOYSA-N (1-hydroxy-2-phosphonoethyl)phosphonic acid Chemical compound OP(=O)(O)C(O)CP(O)(O)=O VPTUPAVOBUEXMZ-UHFFFAOYSA-N 0.000 description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 7
- 229940120146 EDTMP Drugs 0.000 description 7
- 229910019142 PO4 Inorganic materials 0.000 description 7
- 229940090960 diethylenetriamine pentamethylene phosphonic acid Drugs 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 7
- 239000010452 phosphate Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- KIDJHPQACZGFTI-UHFFFAOYSA-N [6-[bis(phosphonomethyl)amino]hexyl-(phosphonomethyl)amino]methylphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCCCCCN(CP(O)(O)=O)CP(O)(O)=O KIDJHPQACZGFTI-UHFFFAOYSA-N 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 6
- 239000012634 fragment Substances 0.000 description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 5
- 239000013522 chelant Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 239000004480 active ingredient Substances 0.000 description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000000599 controlled substance Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 150000007522 mineralic acids Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000011086 high cleaning Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- JKTORXLUQLQJCM-UHFFFAOYSA-N 4-phosphonobutylphosphonic acid Chemical compound OP(O)(=O)CCCCP(O)(O)=O JKTORXLUQLQJCM-UHFFFAOYSA-N 0.000 description 1
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 description 1
- PRWNQYPCHBWLIB-UHFFFAOYSA-N CC1=CC2=C(NN=N2)C=C1.CC1=CC2=C(NN=N2)C=C1 Chemical compound CC1=CC2=C(NN=N2)C=C1.CC1=CC2=C(NN=N2)C=C1 PRWNQYPCHBWLIB-UHFFFAOYSA-N 0.000 description 1
- 101000580354 Rhea americana Rheacalcin-2 Proteins 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001565 benzotriazoles Chemical class 0.000 description 1
- LOGBRYZYTBQBTB-UHFFFAOYSA-N butane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CCC(C(O)=O)CC(O)=O LOGBRYZYTBQBTB-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229940125368 controlled substance Drugs 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/12—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by mechanical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D11/00—Special methods for preparing compositions containing mixtures of detergents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
實施例涉及一種金屬掩模清洗用組合物以及使用其的清洗方法。The embodiments relate to a metal mask cleaning composition and a cleaning method using the same.
有機發光二極管(Organic Light Emitting Diodes,OLED)是一種其中通過接收電能發光的有機化合物以薄膜形式層壓的電子元件,其具有用作下一代照明和顯示器材料的各種優點。OLED顯示器由諸如薄膜晶體管(Thin Film Transistor,TFT)元件、有機材料、封裝層和覆蓋窗等若干層構成,並且這種多層結構可以通過使用掩模(Mask)的沉積方法形成。製造OLED顯示器時在沉積工藝中使用的掩模包括開放式掩模(Open Mask,OM)和高精度金屬掩模板(Fine Metal Mask,FMM),並且通常使用金屬材料。在顯示器製造工藝中,開放式掩模用於通過在OLED基板上沉積有機膜來形成發光層的工藝中,並且高精度金屬掩模板是具有超微細孔(Hole)的薄金屬板,其起到誘導紅(Red)、綠(Green)、藍(Blue)有機發光材料通過孔並分別沉積在基板上所需位置的作用。由於通過這種掩模進行的沉積的精確度直接關係到生產收率,因此掩模的精確加工很重要。Organic Light Emitting Diodes (OLED) are electronic components in which organic compounds that emit light by receiving electrical energy are laminated in the form of thin films, and have various advantages for use as next-generation lighting and display materials. OLED displays are composed of several layers such as thin film transistor (TFT) elements, organic materials, encapsulation layers and cover windows, and this multi-layer structure can be formed by a deposition method using a mask. The masks used in the deposition process when manufacturing OLED displays include open masks (OM) and high-precision metal masks (Fine Metal Masks, FMM), and metal materials are usually used. In the display manufacturing process, an open mask is used in the process of forming a light-emitting layer by depositing an organic film on an OLED substrate, and a high-precision metal mask is a thin metal plate with ultra-fine holes (Hole), which plays the role of The function of inducing red (Red), green (Green), and blue (Blue) organic light-emitting materials to pass through the holes and deposit on the desired positions on the substrate respectively. Since the accuracy of deposition through such a mask is directly related to production yield, precise processing of the mask is important.
作為製造金屬掩模的代表性方法,包括將金屬板壓延薄然後切掉不需要的部分的蝕刻(Etching)方式,或者利用電鍍原理在圖案化的基板上電鍍的電鑄(Electro-forming)方式。然而,存在諸如選擇性蝕刻等其他限制,為了實現繼超高清(UHD)級800 ppi之後適用於虛擬現實(VR)和增強現實(AR)實現的高分辨率1000 ppi,通過使用激光鑽孔來製造圖案的激光圖案化方法受到關注。Typical methods for manufacturing metal masks include the etching method, which rolls a metal plate thin and then cuts off the unnecessary parts, or the electroforming method, which uses the principle of electroplating to electroplat on a patterned substrate. . However, there are other limitations such as selective etching, and in order to achieve high resolution 1000 ppi suitable for virtual reality (VR) and augmented reality (AR) implementations following Ultra High Definition (UHD) grade 800 ppi, by using laser drilling Laser patterning methods for creating patterns are receiving attention.
在使用激光進行金屬掩模加工的工藝中,由於激光的高溫反應,會產生大量的金屬雜質和金屬氧化物。這些金屬氧化物可能會夾在金屬掩模的加工面而作為缺陷像素存在,並且有時會污染加工像素的周圍,因此難以確保均一的加工區域。In the process of using laser for metal mask processing, a large amount of metal impurities and metal oxides will be produced due to the high temperature reaction of the laser. These metal oxides may be sandwiched on the processing surface of the metal mask and exist as defective pixels, and may contaminate the periphery of the processing pixels, making it difficult to ensure a uniform processing area.
這種金屬雜質和金屬氧化物的去除在現有技術中通過使用RCA-2清洗工藝和包括其他無機酸的清洗溶液的清洗工藝來進行,但所述工藝由於使用的鹽酸和其他無機酸可能對金屬掩模材料本身產生強烈的腐蝕影響,特別是在清洗工藝中使用的清洗設備也可能具有腐蝕性,成為問題。此外,由於無機酸多為環境管制物質,其應用存在諸多限制。因此,需要一種能夠解決上述問題的新型清洗用組合物和清洗方法。This kind of removal of metal impurities and metal oxides is carried out in the prior art by using the RCA-2 cleaning process and the cleaning process including other inorganic acids. However, the process may have harmful effects on the metal due to the use of hydrochloric acid and other inorganic acids. The mask material itself has a strong corrosive effect, especially the cleaning equipment used in the cleaning process, which may also be corrosive and become a problem. In addition, since most inorganic acids are environmentally controlled substances, there are many restrictions on their application. Therefore, there is a need for a new cleaning composition and cleaning method that can solve the above problems.
[先前技術文獻][Prior technical literature]
[技術文獻][Technical Documentation]
(專利文獻)KR 10-1761736 B(Patent document) KR 10-1761736 B
[技術問題][Technical Issue]
為解決上述技術問題,實施例目的在於提供一種不包括環境管制物質的清洗用組合物以及清洗方法,所述清洗用組合物作為在不損傷激光加工的金屬掩模的基材(base material)的同時能夠選擇性清洗的清洗用組合物。In order to solve the above technical problems, the purpose of the embodiments is to provide a cleaning composition and a cleaning method that do not include environmentally controlled substances, and the cleaning composition serves as a base material of a metal mask for laser processing without damaging it. A cleaning composition capable of selective cleaning at the same time.
為了解決上述技術問題,實施例提出一種金屬掩模清洗用組合物,其基於組合物的總重量包括70重量%至90重量%的膦酸金屬螯合劑;和剩餘量的水。In order to solve the above technical problems, the embodiment proposes a metal mask cleaning composition, which includes 70 to 90 wt% of phosphonic acid metal chelating agent based on the total weight of the composition; and the remaining amount of water.
此外,在一具體實施例中,提供一種金屬掩模清洗用組合物,其基於組合物的總重量進一步包括0.001重量%至1重量%的腐蝕抑製劑。In addition, in a specific embodiment, a metal mask cleaning composition is provided, which further includes 0.001% to 1% by weight of a corrosion inhibitor based on the total weight of the composition.
在另一具體實施例中,提供一種金屬掩模清洗用組合物,其基於組合物的總重量進一步包括0.01重量%至0.1重量%的腐蝕抑製劑。In another specific embodiment, a metal mask cleaning composition is provided, which further includes 0.01% to 0.1% by weight of a corrosion inhibitor based on the total weight of the composition.
在金屬掩模清洗用組合物中,所述膦酸金屬螯合劑特徵在於包括選自由二乙烯三胺五亞甲基膦酸(DTPMPA)、氨基三亞甲基膦酸(ATMP)、羥基亞乙基二膦酸(HEDP)、己二胺四甲叉膦酸(HMDTMPA)、2-膦酸丁烷-1,2,4-三羧酸(PBTCA)、和乙二胺四亞甲基膦酸(EDTMP)組成的組中的至少一個。In the metal mask cleaning composition, the phosphonic acid metal chelating agent is characterized in that it includes diethylene triamine pentamethylene phosphonic acid (DTPMPA), aminotrimethylene phosphonic acid (ATMP), hydroxyethylene Diphosphonic acid (HEDP), hexamethylenediaminetetramethylenephosphonic acid (HMDTMPA), 2-phosphonic acid butane-1,2,4-tricarboxylic acid (PBTCA), and ethylenediaminetetramethylenephosphonic acid ( EDTMP).
此外,在金屬掩模清洗用組合物中,所述腐蝕抑製劑特徵在於包括選自由苯並三唑(Benzotriazole)、1-氨基苯並三唑(1-Amino-benzotriazole)、1-羥基苯並三唑(1-Hydroxy-benzotriazole)、5-甲基苯並三氮唑(5-Methyl-1H-benzotriazole)和5-羧基苯並三唑(Benzotriazole-5-carboxylic acid)組成的組中的至少一個。Furthermore, in the metal mask cleaning composition, the corrosion inhibitor is characterized in that it includes benzotriazole, 1-Amino-benzotriazole, 1-hydroxybenzotriazole. At least one of the group consisting of triazole (1-Hydroxy-benzotriazole), 5-methylbenzotriazole (5-Methyl-1H-benzotriazole) and 5-carboxybenzotriazole (Benzotriazole-5-carboxylic acid) a.
在金屬掩模清洗用組合物中,所述清洗可以是去除當激光照射到所述金屬掩模上時形成的氧化物。In the metal mask cleaning composition, the cleaning may be to remove oxides formed when laser light is irradiated onto the metal mask.
在金屬掩模清洗用組合物中,所述氧化物可以是選自由鐵(Fe)、鈷(Co)、鉻(Cr)、錳(Mn)、鎳(Ni)、鈦(Ti)、鉬(Mo)、不銹鋼(Steel Use Stainless, SUS)合金、铬镍铁(Inconel)合金、可伐(Kovar)合金、和因瓦(Invar)合金組成的組中的至少一個金屬的氧化物。In the metal mask cleaning composition, the oxide may be selected from iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), nickel (Ni), titanium (Ti), molybdenum ( An oxide of at least one metal in the group consisting of Mo), stainless steel (Steel Use Stainless, SUS) alloy, Inconel alloy, Kovar alloy, and Invar alloy.
在金屬掩模清洗用組合物中,所述金屬掩膜的基材(base material)可以包括選自由鐵(Fe)、鈷(Co)、鉻(Cr)、錳(Mn)、鎳(Ni)、鈦(Ti)、鉬(Mo)、不銹鋼(SUS)合金、铬镍铁(Inconel)合金、可伐(Kovar)合金、和因瓦(Invar)合金組成的組中的至少一個金屬。In the metal mask cleaning composition, the base material of the metal mask may include iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), and nickel (Ni). At least one metal from the group consisting of titanium (Ti), molybdenum (Mo), stainless steel (SUS) alloy, Inconel alloy, Kovar alloy, and Invar alloy.
另外,提供一種金屬掩模的清洗方法,包括使所述清洗用組合物與金屬掩模接觸的步驟。In addition, a method for cleaning a metal mask is provided, which includes the step of bringing the cleaning composition into contact with the metal mask.
根據一具體實施例的清洗方法可通過使用噴塗法、浸漬法和超聲法中的至少一種方法使所述清洗用組合物與所述金屬掩模接觸來進行。The cleaning method according to a specific embodiment may be performed by contacting the cleaning composition with the metal mask using at least one of a spraying method, a dipping method, and an ultrasonic method.
根據一具體實施例的清洗方法可以包括使用所述浸漬法在10°C至50°C的溫度下執行5分鐘至30分鐘的第一步驟。The cleaning method according to a specific embodiment may include using the dipping method to perform a first step at a temperature of 10°C to 50°C for 5 minutes to 30 minutes.
根據一具體實施例的清洗方法可以在所述第一步驟之後包括通過使用蒸餾水在10°C至50°C的溫度下施加超聲波5分鐘至30分鐘來進行的第二步驟。The cleaning method according to a specific embodiment may include a second step performed by applying ultrasonic waves using distilled water at a temperature of 10°C to 50°C for 5 minutes to 30 minutes after the first step.
[有益效果][beneficial effect]
根據實施例的金屬掩模清洗用組合物及清洗方法,可以提供一種在不損傷激光加工的金屬掩膜的基材(base material)的同時能夠選擇性清洗的清洗用組合物及清洗方法。特別地,本發明的清洗用組合物和使用其的清洗方法能夠以更高的清洗力去除金屬氧化物,而不會損傷激光加工的精細金屬掩膜的基材。The metal mask cleaning composition and cleaning method according to the embodiment can provide a cleaning composition and cleaning method that can selectively clean without damaging the base material of a laser-processed metal mask. In particular, the cleaning composition of the present invention and the cleaning method using the same can remove metal oxides with higher cleaning power without damaging the substrate of a laser-processed fine metal mask.
另外,實施例可以提供不包括環境管制物質的清洗用組合物和清洗方法。In addition, embodiments may provide cleaning compositions and cleaning methods that do not include environmentally regulated substances.
以下,為了使本領域技術人員能夠容易地實施,將參照附圖對本實施例進行詳細說明。在描述實施例時,如果判斷相關已知構成或功能的具體描述可能模糊實施例的主旨,則將省略其詳細描述。Hereinafter, in order to enable those skilled in the art to easily implement the present embodiment, this embodiment will be described in detail with reference to the accompanying drawings. When describing the embodiments, if it is judged that detailed description of relevant known components or functions may obscure the gist of the embodiments, the detailed description thereof will be omitted.
此外,在本申請中,諸如“包括”或“具有”等術語意在表示存在說明書中描述的特徵、數字、步驟、操作、構成要素、部分或其組合,但應當理解不排除存在或添加一個或多個其他的特徵、數字、步驟、操作、構成要素、部分或其組合。在本申請中,單數表達可以包括複數表達,除非上下文另有明確規定。In addition, in this application, terms such as "comprising" or "having" are intended to indicate the presence of the features, numbers, steps, operations, constituent elements, parts or combinations thereof described in the specification, but it should be understood that the presence or addition of a or multiple other features, numbers, steps, operations, constituent elements, parts or combinations thereof. In this application, singular expressions may include plural expressions unless the context clearly dictates otherwise.
在下文中,將詳細描述根據實施例的金屬掩模清洗用組合物和使用其的清洗方法。Hereinafter, the metal mask cleaning composition according to the embodiment and the cleaning method using the same will be described in detail.
根據一實施例的所述金屬掩模清洗用組合物基於組合物的總重量包括70重量%至90重量%的膦酸金屬螯合劑;和剩餘量的水。The metal mask cleaning composition according to an embodiment includes 70 to 90 wt% of a phosphonic acid metal chelating agent based on the total weight of the composition; and the remaining amount of water.
所述膦酸金屬螯合劑的含量相對較高,即基於組合物的總重量包括70重量%至90重量%,從而可以表現出改善的金屬掩模清洗能力。現有的清洗用組合物中包括的強酸如硫酸、磷酸和鹽酸在清洗工藝中會產生有害物質如SO x和NO x,並且當含量高時,則強酸的性質對金屬掩模的腐蝕產生不利影響,但實施例的金屬掩模清洗用組合物可以表現出優異的清洗能力而不會損傷金屬掩模基材,並且不屬於環境管制物質。另外,實施例的清洗用組合物具有對不銹鋼(SUS)系列的超聲波槽材料無腐蝕性的優點。 The content of the phosphonate metal chelating agent is relatively high, that is, 70 to 90 wt% based on the total weight of the composition, so that improved metal mask cleaning ability can be exhibited. Strong acids such as sulfuric acid, phosphoric acid and hydrochloric acid included in existing cleaning compositions will produce harmful substances such as SO x and NO x during the cleaning process, and when the content is high, the properties of the strong acid will have an adverse effect on the corrosion of the metal mask. , but the metal mask cleaning composition of the embodiment can exhibit excellent cleaning ability without damaging the metal mask base material, and is not an environmentally controlled substance. In addition, the cleaning composition of the embodiment has the advantage of being non-corrosive to stainless steel (SUS) series ultrasonic tank materials.
特別地,實施例的金屬掩模清洗用組合物可以通過包括膦酸金屬螯合劑來在表現出pH 1.0或更小的強酸性的同時表現出非常有效的清洗能力,特別是在不損傷因瓦基材的金屬掩模的同時表現出高清洗能力。In particular, the metal mask cleaning compositions of the embodiments can exhibit very effective cleaning capabilities while exhibiting a strong acidity of pH 1.0 or less by including a phosphonic acid metal chelating agent, particularly without damaging the invar. The metal mask of the substrate simultaneously exhibits high cleaning capabilities.
根據一具體實施例的所述膦酸金屬螯合劑特徵在於包括選自由二乙烯三胺五亞甲基膦酸(DTPMPA)﹑氨基三亞甲基膦酸(ATMP)﹑羥基亞乙基二膦酸(HEDP)﹑己二胺四甲叉膦酸(HMDTMPA)﹑2-膦酸丁烷-1,2,4-三羧酸(PBTCA)﹑和乙二胺四亞甲基膦酸(EDTMP)組成的組中的一個或多個。According to a specific embodiment, the phosphonic acid metal chelating agent is characterized in that it includes diethylene triamine pentamethylene phosphonic acid (DTPMPA), aminotrimethylene phosphonic acid (ATMP), hydroxyethylene diphosphonic acid ( HEDP), hexamethylenediaminetetramethylenephosphonic acid (HMDTMPA), 2-butane-1,2,4-tricarboxylic acid (PBTCA), and ethylenediaminetetramethylenephosphonic acid (EDTMP) One or more of the group.
如上所述,在基於組合物的總重量包括70重量%至90重量%的膦酸金屬螯合劑;和剩餘量的水的根據一具體實施例的所述金屬掩模清洗用組合物中,所述剩餘量的水是指清洗用組合物為100重量%時除去所述金屬螯合劑的剩餘重量%。As mentioned above, in the metal mask cleaning composition according to a specific embodiment including 70 to 90 wt% of phosphonic acid metal chelating agent based on the total weight of the composition; and the remaining amount of water, the The remaining amount of water refers to the remaining weight % after removing the metal chelating agent when the cleaning composition is 100% by weight.
根據一具體實施例的所述金屬掩模清洗用組合物可以基於組合物的總重量進一步包括0.001重量%至1重量%的腐蝕抑製劑,更優選地為基於組合物的總重量的0.01重量%至0.1重量%。The metal mask cleaning composition according to a specific embodiment may further include 0.001% to 1% by weight of a corrosion inhibitor based on the total weight of the composition, more preferably 0.01% by weight based on the total weight of the composition. to 0.1% by weight.
換言之,可以基於組合物的總重量包括70重量%至90重量%的膦酸金屬螯合劑;0.001重量%至1重量%的腐蝕抑製劑;以及剩餘量的水。更優選地,可以基於組合物的總重量包括70重量%至90重量%的膦酸金屬螯合劑;0.01重量%至0.1重量%的腐蝕抑製劑劑;以及剩餘量的水。In other words, 70 to 90 wt% of the phosphonate metal chelating agent; 0.001 to 1 wt% of the corrosion inhibitor; and the remaining amount of water may be included based on the total weight of the composition. More preferably, 70% to 90% by weight of phosphonate metal chelating agent; 0.01% to 0.1% by weight of corrosion inhibitor agent; and the remaining amount of water may be included based on the total weight of the composition.
所述剩餘量的水是指基於清洗用組合物100重量%時除去膦酸金屬螯合劑和腐蝕抑製劑的含量後的剩餘重量%。The remaining amount of water refers to the remaining weight % after excluding the contents of the phosphonic acid metal chelating agent and the corrosion inhibitor based on 100% by weight of the cleaning composition.
根據一具體實施例的所述金屬掩模清洗用組合物根據包括所述含量範圍內的腐蝕抑製劑來具有幾乎沒有對金屬掩模基材的腐蝕性的優點。The metal mask cleaning composition according to a specific embodiment has the advantage of having almost no corrosion to the metal mask base material by including the corrosion inhibitor within the content range.
所述腐蝕抑製劑的特徵在於包括唑基(Azol)和乙醇胺基(Ethanolamine)基腐蝕抑製劑中的至少一個,但不限於此。The corrosion inhibitor is characterized by including at least one of an azol-based (Azol)-based and an ethanolamine-based (Ethanolamine)-based corrosion inhibitor, but is not limited thereto.
所述唑基腐蝕抑製劑可以包括選自由三唑化合物、苯並三唑化合物、咪唑化合物、四唑化合物、噻唑化合物、噁唑化合物和吡唑化合物組成的組中的至少一個。The azole-based corrosion inhibitor may include at least one selected from the group consisting of triazole compounds, benzotriazole compounds, imidazole compounds, tetrazole compounds, thiazole compounds, oxazole compounds, and pyrazole compounds.
所述乙醇胺基腐蝕抑製劑可以包括選自由單乙醇胺、二乙醇胺和三乙醇胺組成的組中的至少一個。The ethanolamine-based corrosion inhibitor may include at least one selected from the group consisting of monoethanolamine, diethanolamine, and triethanolamine.
更優選地,所述腐蝕抑製劑包括苯並三唑化合物。具體地,可以包括選自由苯並三唑(Benzotriazole)﹑1-氨基苯並三唑(1-Amino-benzotriazole)﹑1-羥基苯並三唑(1-Hydroxy-benzotriazole)﹑5-甲基苯並三氮唑(5-Methyl-1H-benzotriazole)﹑和5-羧基苯並三唑(Benzotriazole-5-carboxylic acid)組成的組中的一個或多個。More preferably, the corrosion inhibitor includes a benzotriazole compound. Specifically, it may include a group selected from benzotriazole, 1-Amino-benzotriazole, 1-Hydroxy-benzotriazole, 5-methylbenzene One or more of the group consisting of 5-Methyl-1H-benzotriazole and 5-carboxybenzotriazole-5-carboxylic acid.
特別地,實施例的金屬掩模清洗用組合物更優選基於組合物的總重量包括0.01重量%至0.1重量%的所述苯並三唑化合物,具有這種組成的金屬掩模清洗用組合物特別地對因瓦材料的金屬掩模本身不表現出蝕刻或凹坑(Pit)腐蝕性,同時也不表現出對清洗設備的腐蝕性。In particular, the metal mask cleaning composition of the embodiment more preferably includes 0.01 to 0.1 wt% of the benzotriazole compound based on the total weight of the composition. The metal mask cleaning composition having this composition In particular, metal masks made of Invar materials themselves do not exhibit etching or pitting (pit) corrosion, nor do they exhibit corrosion to cleaning equipment.
例如,所述清洗設備可以是通常用作超聲波浴的材料的SUS 304或SUS 316,但不限於此。For example, the cleaning equipment may be SUS 304 or SUS 316, which is commonly used as a material for ultrasonic baths, but is not limited thereto.
根據一具體實施例的金屬掩模清洗用組合物的目的在於去除金屬掩模加工過程中激光照射金屬掩模時形成的氧化物。也就是說,當用激光照射金屬掩模時,金屬掩模基材被激光的高溫反應氧化而生成金屬氧化物,並且實施例的清洗用組合物去除這種氧化物。相應地,所述氧化物可以是選自鐵(Fe)、鈷(Co)、鉻(Cr)、錳(Mn)、鎳(Ni)、鈦(Ti)、鉬(Mo)、不銹鋼(SUS)合金、铬镍铁(Inconel)合金、可伐(Kovar)合金、和因瓦(Invar)合金中的至少一個金屬的氧化物。The purpose of the metal mask cleaning composition according to a specific embodiment is to remove oxides formed when laser irradiates the metal mask during metal mask processing. That is, when a metal mask is irradiated with a laser, the metal mask base material is oxidized by the high-temperature reaction of the laser to generate a metal oxide, and the cleaning composition of the embodiment removes this oxide. Correspondingly, the oxide may be selected from iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), nickel (Ni), titanium (Ti), molybdenum (Mo), stainless steel (SUS) An oxide of at least one metal among alloys, Inconel alloys, Kovar alloys, and Invar alloys.
另外,所述金屬掩膜的基材可以包括選自鐵(Fe)、鈷(Co)、鉻(Cr)、錳(Mn)、鎳(Ni)、鈦(Ti)、鉬(Mo)、不銹鋼(SUS)合金、铬镍铁(Inconel)合金、可伐(Kovar)合金、和因瓦(Invar)合金中的至少一個金屬。In addition, the base material of the metal mask may include iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), nickel (Ni), titanium (Ti), molybdenum (Mo), stainless steel At least one metal selected from (SUS) alloy, Inconel alloy, Kovar alloy, and Invar alloy.
例如,所述金屬掩模基材可以是因瓦合金。因瓦合金的主要成分是鐵(Fe)和鎳(Ni),與SUS合金相比,其熱膨脹小,即使在高溫下張力也不會明顯減少,因此更優選用作金屬掩模基材。另外,當將實施例的清洗用組合物用於以因瓦合金為基材的金屬掩模時,腐蝕性低,清洗性高,因此更優選。For example, the metal mask substrate may be Invar alloy. The main components of Invar alloy are iron (Fe) and nickel (Ni). Compared with SUS alloy, its thermal expansion is small and the tension will not be significantly reduced even at high temperatures, so it is more preferably used as a metal mask base material. In addition, when the cleaning composition of the Example is used for a metal mask using an Invar alloy as a base material, it is more preferable because it has low corrosiveness and high cleaning properties.
一方面,可以提供根據一具體實施例的金屬掩模的清洗方法。例如,本發明的清洗方法包括使基於組合物總重量包括70重量%至90重量%的膦酸金屬螯合劑;和剩餘量的水的清洗用組合物與金屬掩模接觸的步驟。In one aspect, a method for cleaning a metal mask according to a specific embodiment may be provided. For example, the cleaning method of the present invention includes the step of contacting a cleaning composition including 70 to 90 wt% of a phosphonic acid metal chelating agent based on the total weight of the composition; and the remaining amount of water with the metal mask.
在根據一具體實施例的金屬掩模清洗方法可以通過使用噴塗法、浸漬法和超聲法中的至少一種方法使所述清洗用組合物與金屬掩模接觸來進行,但不限於上述方法。所述噴塗法可以是將所述清洗用組合物噴霧到金屬掩模基材上的方法,所述浸漬法可以是將所述清洗用組合物填充到清洗槽中並浸漬所述金屬掩模基材的方法,且所述超聲波法可以通過將所述金屬掩模基材浸漬到所述清洗用組合物中並施加超聲波來進行。The metal mask cleaning method according to a specific embodiment can be performed by contacting the cleaning composition with the metal mask using at least one of spraying, dipping and ultrasonic methods, but is not limited to the above method. The spraying method may be a method of spraying the cleaning composition onto a metal mask base material, and the dipping method may be a method of filling a cleaning tank with the cleaning composition and immersing the metal mask base material. The ultrasonic method can be performed by dipping the metal mask base material into the cleaning composition and applying ultrasonic waves.
在根據一具體實施例的金屬掩模清洗方法中,所述使清洗用組合物與金屬掩模接觸的步驟可以通過使用浸漬法在10℃至50℃的溫度下進行5分鐘至30分鐘,但不限於此。In the metal mask cleaning method according to a specific embodiment, the step of contacting the cleaning composition with the metal mask can be performed by using a dipping method at a temperature of 10°C to 50°C for 5 minutes to 30 minutes, but Not limited to this.
另外,可以以在所述使用浸漬法的第一步驟之後進一步進行通過使用蒸餾水在10°C至50°C的溫度下施加超聲波5分鐘至30分鐘來進行的第二步驟的方法來清洗金屬掩模。In addition, the metal mask may be cleaned in a method in which the first step using the dipping method is further followed by a second step performed by applying ultrasonic waves using distilled water at a temperature of 10°C to 50°C for 5 minutes to 30 minutes. mold.
根據一具體實施例的金屬掩模清洗方法可以包括使基於組合物總重量包括70重量%至90重量%的膦酸金屬螯合劑;0.01重量%至0.1重量%的腐蝕抑製劑;和剩餘量的水的清洗用組合物與金屬掩模接觸的步驟,並且可以使用所有上述清洗方法。A metal mask cleaning method according to a specific embodiment may include 70% to 90% by weight of a phosphonic acid metal chelating agent based on the total weight of the composition; 0.01% to 0.1% by weight of a corrosion inhibitor; and the remaining amount. The step of contacting the metal mask with the aqueous cleaning composition, and all of the above cleaning methods can be used.
以下,將通過實施例進行更詳細的描述。然而,以下實施例僅用於具體例示本發明,並不用於限制發明申請專利範圍。也就是說,本實施例所屬領域的技術人員可以容易地對實施例進行簡單的修改或改變,並且所有這樣的修改或改變可以被認為包括在實施例的範圍內。Hereinafter, a more detailed description will be given through examples. However, the following examples are only used to specifically illustrate the present invention and are not intended to limit the patentable scope of the invention. That is, those skilled in the art to which this embodiment belongs can easily make simple modifications or changes to the embodiments, and all such modifications or changes can be considered to be included within the scope of the embodiments.
<實施例1><Example 1>
如下所述,在根據表中的組成製造金屬掩模清洗組合物後,進行金屬掩模的清洗,並評估i)超聲波浴(材質SUS 304、316)清洗設備的腐蝕性﹑ii)金屬掩模腐蝕性(蝕刻性)﹑iii)金屬掩模腐蝕性(凹坑腐蝕性)﹑以及iv)外觀上清洗性。As follows, after manufacturing a metal mask cleaning composition according to the composition in the table, the metal mask is cleaned, and i) the corrosiveness of the ultrasonic bath (material SUS 304, 316) cleaning equipment is evaluated; ii) the metal mask Corrosiveness (etching), iii) Metal mask corrosiveness (pitting corrosiveness), and iv) Appearance cleanability.
1. 評估方法1. Assessment methods
i)對超聲波浴(材質SUS 304、316)清洗設備的腐蝕性的評估是測試超聲波清洗設備是否由於清洗用組合物引起腐蝕。固定各清洗用組合物至50°C後,浸漬(dipping)SUS 304和316碎片,並在1小時後如下觀察和評估腐蝕性。i) The evaluation of the corrosiveness of ultrasonic bath (material SUS 304, 316) cleaning equipment is to test whether the ultrasonic cleaning equipment is corroded due to the cleaning composition. After fixing each cleaning composition to 50°C, SUS 304 and 316 pieces were dipped, and the corrosiveness was observed and evaluated after 1 hour as follows.
[表1]
ii)對金屬掩模腐蝕性(蝕刻性)的評估是評估金屬掩模基材自身是否被蝕刻。將激光加工的因瓦材質的精細金屬掩模(FMM)浸漬到各清洗用組合物中後,將超聲波裝置加熱至50℃並清洗10分鐘,並以SEM(截面)如下觀察和評估蝕刻率。ii) The assessment of metal mask corrosiveness (etchability) is to assess whether the metal mask substrate itself is etched. After immersing the laser-processed Invar fine metal mask (FMM) in each cleaning composition, the ultrasonic device was heated to 50°C and cleaned for 10 minutes, and the etching rate was observed and evaluated with SEM (cross-section) as follows.
[表2]
iii)對金屬掩模腐蝕性(凹坑腐蝕性)的評估是評估在金屬掩模基材中是否形成凹坑(Pit)即小孔。將激光加工的因瓦材質的高精度金屬掩模板(FMM)浸漬到各清洗用組合物中後,將超聲波裝置加熱至50℃並清洗10分鐘,並以SEM(截面)如下觀察和評估蝕刻率。iii) The evaluation of metal mask corrosiveness (pit corrosion) is to evaluate whether pits (pits), that is, small holes, are formed in the metal mask base material. After immersing the laser-processed high-precision metal mask (FMM) made of Invar into each cleaning composition, the ultrasonic device was heated to 50°C and cleaned for 10 minutes, and the etching rate was observed and evaluated with SEM (cross-section) as follows .
[表3]
iv)在對外觀上清洗性的評估中,將各清洗用組合物和金屬掩模放入超聲波裝置中,然後在50℃下清洗10分鐘,並且如下觀察和評估外觀上清洗性。iv) In the evaluation of the apparent cleanability, each cleaning composition and the metal mask were put into an ultrasonic device, and then cleaned at 50° C. for 10 minutes, and the apparent cleanability was observed and evaluated as follows.
[表4]
2. 根據是否包括磷酸基金屬螯合劑的清洗測試2. Cleaning test based on whether phosphate-based metal chelating agents are included
根據下表5的組成製造清洗用組合物後,進行清洗測試。#1-1至#1-8為分別依次包括二乙烯三胺五亞甲基膦酸(DTPMPA)﹑氨基三亞甲基膦酸(ATMP)﹑羥基亞乙基二膦酸(HEDP)﹑己二胺四甲叉膦酸(HMDTMPA)﹑2-膦酸丁烷-1,2,4-三羧酸(PBTCA)﹑和乙二胺四亞甲基膦酸(EDTMP)的情況,#2-1至#2-6為包括清洗用組合物中常用的強酸(磷酸、鹽酸)的情況,#2-7為使用作為另一種螯合劑的乙二胺四乙酸(EDTA)的情況。此外,作為腐蝕抑製劑,使用苯並三唑(Benzotriazole, BTA)或三乙醇胺(Triethanolamine, TEA)。After preparing the cleaning composition according to the composition in Table 5 below, a cleaning test was performed. #1-1 to #1-8 include diethylene triamine pentamethylene phosphonic acid (DTPMPA), aminotrimethylene phosphonic acid (ATMP), hydroxyethylene diphosphonic acid (HEDP), and hexane diphosphonic acid, respectively. The case of amine tetramethylene phosphonic acid (HMDTMPA), 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTCA), and ethylenediamine tetramethylenephosphonic acid (EDTMP), #2-1 To #2-6 are cases where strong acids commonly used in cleaning compositions (phosphoric acid, hydrochloric acid) are included, and #2-7 are cases where ethylenediaminetetraacetic acid (EDTA) is used as another chelating agent. In addition, as corrosion inhibitors, benzotriazole (BTA) or triethanolamine (TEA) is used.
[表5]
通過上述結果,確認包括磷酸基金屬螯合劑的#1-1至#1-8的組合物在清洗性和腐蝕性方面表現出更優異的效果。特別是在使用磷酸、鹽酸等強酸的情況下,即使是包括相對少含量(10重量%),金屬掩模和清洗設備也會發生嚴重的腐蝕。From the above results, it was confirmed that the compositions #1-1 to #1-8 including the phosphate-based metal chelating agent showed more excellent effects in terms of cleaning properties and corrosive properties. Especially when strong acids such as phosphoric acid and hydrochloric acid are used, even in relatively small amounts (10% by weight), severe corrosion can occur on metal masks and cleaning equipment.
圖1為使用現有的清洗用組合物清洗後拍攝超聲波清洗設備的照片。具體地,其為使用根據所述#2-4的清洗用組合物,並且可以通過圖1確認清洗後超聲波浴中發生腐蝕。Figure 1 is a photo of ultrasonic cleaning equipment taken after cleaning with an existing cleaning composition. Specifically, the cleaning composition according to #2-4 was used, and it can be confirmed from Figure 1 that corrosion occurred in the ultrasonic bath after cleaning.
圖2A至圖2B為用於確認外觀上清洗性而拍攝的清洗金屬掩模前後的照片。2A to 2B are photos taken before and after cleaning the metal mask to confirm the cleaning properties in appearance.
圖2A為拍攝在進行激光加工後的金屬掩模的照片,其為清洗前的狀態。圖2B為根據後述的實施例5,表示LV1(良好的外觀光澤和清洗力)程度的外觀上清洗性,圖2C對應於表5的#1-7,表示LV2(外觀略暗,存在一些破片(debris))程度的外觀上清洗性。圖2D對應於所述表5中的#1-8,表示LV3(外觀暗,存在很多破片)程度的外觀上清洗性,且圖2E對應於所述表5中的#2-7,表示LV4(外觀無變化,無清洗效果)程度的外觀上清洗性。FIG. 2A is a photo of the metal mask after laser processing, which is the state before cleaning. Figure 2B shows the cleaning properties in appearance at the level of LV1 (good appearance gloss and cleaning power) according to Example 5 described later. Figure 2C corresponds to #1-7 in Table 5 and shows LV2 (slightly dark appearance with some fragments). (debris)) degree of appearance cleanability. Figure 2D corresponds to #1-8 in Table 5, indicating LV3 (dark appearance, many fragments) appearance cleaning properties, and Figure 2E corresponds to #2-7 in Table 5, indicating LV4 (No change in appearance, no cleaning effect) Appearance cleanability.
通過圖2可以確認包括膦酸基金屬螯合劑的清洗用組合物在外觀上表現出更優異的清洗性。From Figure 2, it can be confirmed that the cleaning composition including the phosphonic acid-based metal chelating agent exhibits more excellent cleaning properties in appearance.
根據上述結果,在下文中,製造並測試了具有包括ATMP的各種組成的清洗用組合物。Based on the above results, in the following, cleaning compositions having various compositions including ATMP were manufactured and tested.
3. 試驗例1:根據磷酸金屬螯合物含量的清洗試驗3. Test Example 1: Cleaning test based on phosphate metal chelate content
根據下表6的組成,通過調節磷酸金屬螯合物的含量製備清洗用組合物,然後進行清洗試驗。According to the composition of Table 6 below, prepare a cleaning composition by adjusting the content of phosphate metal chelate, and then conduct a cleaning test.
[表6]
在包括70重量%或更高的膦酸金屬螯合劑的實施例1至3中,確認了相比於比較例1和比較例2,在超聲波浴清洗設備的腐蝕性、金屬掩模腐蝕性(蝕刻性)﹑金屬掩模腐蝕性(凹坑腐蝕性)﹑和外觀上清洗性方面均表現出優異的效果。In Examples 1 to 3 including 70% by weight or more of the phosphonic acid metal chelating agent, it was confirmed that the corrosivity of the ultrasonic bath cleaning equipment, the metal mask corrosivity ( Etching properties), metal mask corrosion properties (pitting corrosion properties), and appearance cleaning properties show excellent results.
圖3A和圖3B分別為使用根據所述比較例1的組合物清洗金屬掩模前後的SEM照片。圖3A為進行激光加工後拍攝清洗前的金屬掩模的照片。圖3B為拍攝通過使用所述比較例1的組合物清洗的金屬掩模的照片。3A and 3B are SEM photos before and after cleaning the metal mask using the composition according to Comparative Example 1, respectively. Figure 3A is a photo of the metal mask taken after laser processing and before cleaning. 3B is a photograph of a metal mask cleaned by using the composition of Comparative Example 1.
圖4為通過使用所述比較例1和實施例2的組合物清洗金屬掩模後的SEM照片。圖4A為拍攝通過使用根據所述比較例1的組合物清洗的金屬掩模的照片,圖4B為拍攝通過使用根據所述實施例2的組合物清洗的金屬掩模的照片。參照圖4A,可以確認當使用根據比較例1的組合物進行清洗時出現凹坑腐蝕。4 is an SEM photograph of a metal mask after cleaning by using the composition of Comparative Example 1 and Example 2. 4A is a photograph taken of a metal mask cleaned by using the composition according to Comparative Example 1, and FIG. 4B is a photograph taken of a metal mask cleaned by using the composition according to Example 2. Referring to FIG. 4A , it can be confirmed that pit corrosion occurs when the composition according to Comparative Example 1 is used for cleaning.
4. 試驗例2:根據磷酸基金屬螯合物含量的清洗試驗4. Test Example 2: Cleaning test based on phosphate-based metal chelate content
根據下表7的組成,通常以0.01重量%包括作為腐蝕抑製劑的BTA,但通過調節磷酸金屬螯合物的含量製造清洗用組合物後,進行清洗測試。According to the composition of Table 7 below, BTA as a corrosion inhibitor is usually included at 0.01% by weight, but after the cleaning composition is manufactured by adjusting the content of the phosphate metal chelate, a cleaning test is performed.
[表7]
如上述試驗例1,在包括小於70重量%的膦酸金屬螯合劑的比較例3的情況下,確認外觀上清洗性不好,並且在包括超過90重量%的膦酸金屬螯合劑的比較例4和比較例5的情況下,確認了外觀上清洗性也不好。As in the above-mentioned Test Example 1, in the case of Comparative Example 3 containing less than 70% by weight of the phosphonic acid metal chelating agent, it was confirmed that the cleanability was not good in appearance, and in the case of the comparative example containing more than 90% by weight of the phosphonic acid metal chelating agent In the case of Comparative Example 4 and Comparative Example 5, it was confirmed that the cleanability was not good in terms of appearance.
圖5為通過使用所述實施例5的組合物清洗金屬掩模前後的SEM照片。圖5A為拍攝在進行激光加工後清洗前的金屬掩模的照片,圖5B為拍攝通過使用根據所述實施例5的組合物清洗的金屬掩模的照片。另外,圖5C為拍攝在進行激光加工後清洗前的金屬掩模的照片,圖5D為拍攝通過使用根據所述實施例5的組合物清洗的金屬掩模的照片。與圖3相比,從觀察值可以確認,使用比較例1的組合物清洗時,金屬掩模本身的腐蝕程度更為嚴重。Figure 5 is a SEM photograph before and after cleaning a metal mask by using the composition of Example 5. 5A is a photograph taken of a metal mask before cleaning after laser processing, and FIG. 5B is a photograph taken of a metal mask cleaned by using the composition according to Example 5. In addition, FIG. 5C is a photograph taken of the metal mask before cleaning after laser processing, and FIG. 5D is a photograph taken of the metal mask cleaned by using the composition according to Example 5. Compared with Figure 3, it can be confirmed from the observation values that when the composition of Comparative Example 1 is used for cleaning, the corrosion degree of the metal mask itself is more serious.
圖6A為使用比較例4的組合物清洗金屬掩模後的SEM照片。圖6B為使用比較例5的組合物清洗金屬掩模後的SEM照片。通過圖6A和圖6B可以確認,清洗用組合物中包括的ATMP含量超過90重量%時,微細區域中會出現清洗不良,這被判斷為隨著粘度增加,滲透微細區域存在限制,導致清洗力反而減少。FIG. 6A is an SEM photo after cleaning the metal mask using the composition of Comparative Example 4. FIG. 6B is an SEM photo after cleaning the metal mask using the composition of Comparative Example 5. It can be confirmed from Figures 6A and 6B that when the content of ATMP included in the cleaning composition exceeds 90% by weight, cleaning failure occurs in the fine areas. This is judged to be due to the increase in viscosity, which limits penetration into the fine areas, resulting in cleaning power. On the contrary, it decreases.
5. 試驗例3:根據腐蝕抑製劑含量的清洗試驗5. Test Example 3: Cleaning test based on corrosion inhibitor content
根據下表8的組成,通常以80重量%包括磷酸金屬螯合物,但通過調節作為腐蝕抑製劑的BTA的含量製造清洗用組合物後,進行清洗測試。According to the composition of Table 8 below, the phosphate metal chelate is usually included at 80% by weight, but the cleaning composition is manufactured by adjusting the content of BTA as a corrosion inhibitor, and then a cleaning test is performed.
[表8]
由此可以確認,從腐蝕性方面更優選地包括腐蝕抑製劑,但當含量太高時,外觀上清洗性變差。From this, it can be confirmed that it is more preferable to include a corrosion inhibitor in terms of corrosiveness, but when the content is too high, the cleanability becomes poor in appearance.
上述實施例的描述僅是示例性的,本領域的技術人員將理解由此可以進行各種修改和等同的其他實施例。因此,本發明的真正保護範圍應以所附發明申請專利範圍為準,在發明申請專利範圍所記載的等同範圍內的所有差異點均應視為包含在發明申請專利範圍所界定的保護範圍內。The above description of the embodiments is illustrative only, and those skilled in the art will understand that various modifications and equivalent other embodiments may be made thereby. Therefore, the true protection scope of the present invention should be subject to the appended invention application patent scope. All differences within the equivalent scope recorded in the invention application patent scope should be deemed to be included in the protection scope defined by the invention application patent scope. .
無without
圖1為在使用現有的清洗用組合物的清洗後通過拍攝超聲波浴(bath)來確認腐蝕性的照片。 圖2A至圖2E為在使用根據一試驗例的清洗用組合物的清洗後通過拍攝金屬掩模來確認外觀上清洗性的照片。 圖3A和圖3B分別為使用比較例1的組合物清洗金屬掩模前後的掃描電子顯微鏡(SEM)照片(清洗前:圖3A,清洗後:圖3B)。 圖4A為使用比較例1的組合物清洗金屬掩模後的SEM照片。圖4B為使用實施例2的組合物清洗金屬掩模後的SEM照片。 圖5A和圖5B分別為使用根據實施例5的組合物清洗金屬掩模前後的SEM照片。 另外,圖5C和圖5D分別為使用根據實施例5的組合物清洗金屬掩模前後的SEM照片。 圖6A為使用比較例4的組合物清洗金屬掩模後的SEM照片。圖6B為使用比較例5的組合物清洗金屬掩模後的SEM照片。 Figure 1 is a photograph taken in an ultrasonic bath to confirm corrosiveness after cleaning using a conventional cleaning composition. 2A to 2E are photographs of a metal mask taken to confirm the apparent cleaning properties after cleaning using the cleaning composition according to one test example. Figures 3A and 3B are scanning electron microscope (SEM) photos of the metal mask before and after cleaning using the composition of Comparative Example 1 (before cleaning: Figure 3A, after cleaning: Figure 3B). FIG. 4A is an SEM photo after cleaning the metal mask using the composition of Comparative Example 1. Figure 4B is an SEM photo after cleaning the metal mask using the composition of Example 2. 5A and 5B are SEM photos before and after cleaning the metal mask using the composition according to Example 5 respectively. In addition, FIG. 5C and FIG. 5D are respectively SEM photos before and after cleaning the metal mask using the composition according to Example 5. FIG. 6A is an SEM photo after cleaning the metal mask using the composition of Comparative Example 4. FIG. 6B is an SEM photo after cleaning the metal mask using the composition of Comparative Example 5.
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US20100261632A1 (en) * | 2007-08-02 | 2010-10-14 | Advanced Technology Materials, Inc. | Non-fluoride containing composition for the removal of residue from a microelectronic device |
KR20120029526A (en) * | 2010-09-17 | 2012-03-27 | 동우 화인켐 주식회사 | Metal-cleaning composition for manufacturing flat panel display |
KR102536249B1 (en) * | 2016-07-15 | 2023-05-25 | 삼성디스플레이 주식회사 | Cleaning composition for removing oxide and method of cleaning using the same |
-
2023
- 2023-04-25 WO PCT/KR2023/005599 patent/WO2023211110A1/en unknown
- 2023-04-26 TW TW112115614A patent/TW202342713A/en unknown
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WO2023211110A1 (en) | 2023-11-02 |
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