KR20120029526A - Metal-cleaning composition for manufacturing flat panel display - Google Patents
Metal-cleaning composition for manufacturing flat panel display Download PDFInfo
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Abstract
Description
본 발명은 평판표시장치(FPD) 제조공정, 특히 유기전계발광표시장치(OLED) 제조공정에서 있어서, 금속마스크 및 금속기판 세정용 조성물에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal mask and a metal substrate cleaning composition in a flat panel display (FPD) manufacturing process, particularly in an organic light emitting display (OLED) manufacturing process.
액정표시장치로 대표되는 평판표시장치(FPD)는 성막, 노광, 에칭 등의 공정을 거쳐 제조되며, 각 제조공정에서 기판 표면에 각종 유기물이나 무기물 등 크기가 1㎛이하의 매우 작은 파티클(Particle)들이 부착되어 오염이 야기된다. 이러한 파티클에 의한 오염은 디바이스의 수율을 저하시키기 때문에, 후공정에 들어가기 전에 최대한 저감시킬 필요가 있다.A flat panel display (FPD), which is represented by a liquid crystal display, is manufactured through processes such as film formation, exposure, and etching, and in each manufacturing process, very small particles having a size of 1 μm or less, such as various organic materials and inorganic materials, on the substrate surface. Are attached, causing contamination. Since contamination by these particles lowers the yield of the device, it is necessary to reduce as much as possible before entering the post-process.
따라서 오염물을 제거하기 위한 세정이 각 공정간에 행해지고 있고, 이를 위한 세정액에 대해서도 많은 제안이 이루어지고 있다. Therefore, cleaning to remove contaminants is performed between the steps, and many proposals have been made for cleaning liquids for this purpose.
특히, 대한민국 공개특허 2008-0046632호에는 금속마스크에 들러붙은 유기 물질을 용해하는 유기용제로 금속마스크를 세척하는 단계와, 순수로 세척된 금속마스크를 진공건조하는 단계를 포함하는 금속마스크 세척방법이 개시되어 있다. 그러나, 이러한 방법은 금속마스크에 들러붙은 금속의 제거에 효과적이지 않고, 유기용제를 사용하기 때문에 유기용제가 잔류하기 쉽고, 금속마스크의 건조공정에 진공건조를 요하므로, 건조시간이 길며, 비용이 많이 드는 단점이 있다.In particular, Korean Patent Laid-Open Publication No. 2008-0046632 discloses a method for cleaning a metal mask, which comprises washing the metal mask with an organic solvent that dissolves organic substances adhered to the metal mask, and vacuum drying the metal mask washed with pure water. Is disclosed. However, this method is not effective for removing metal adhered to the metal mask, organic solvents tend to remain due to the use of organic solvents, and vacuum drying is required for the drying process of the metal mask. There are a lot of disadvantages.
본 발명은 평판표시장치(FPD) 제조공정, 특히 유기전계발광표시장치(OLED) 제조공정에서 유기물 증착공정 중 금속마스크 및 금속기판상에 부착되는 금속의 제거에 탁월하며, 하부금속판을 부식시키지 않는 금속 세정용 조성물을 제공하는 것을 목적으로 한다.The present invention is excellent in the removal of metal attached to the metal mask and the metal substrate during the organic material deposition process in the manufacturing process of the flat panel display (FPD), in particular the organic light emitting display (OLED) manufacturing process, the metal does not corrode the lower metal plate It is an object to provide a cleaning composition.
이에 본 발명은 무기 알칼리, 유기산, 아졸계 화합물, 유기 인산 또는 그의 염 및 물을 포함하는 금속 세정용 조성물을 제공한다.Thus, the present invention provides a metal cleaning composition comprising an inorganic alkali, an organic acid, an azole compound, an organic phosphoric acid or a salt thereof, and water.
본 발명의 세정액 조성물은 평판표시장치 제조공정 중 금속마스크 및 금속 기판상에 부착되는 금속, 그 중에서도 알칼리토금속과 구리족 원소 제거력이 우수하고, 스테인레스와 같은 하부금속판에 대한 부식방지 효과가 우수하며, 다량의 탈이온수를 포함하고 있어 취급이 용이하며 환경적으로 유리하다.The cleaning liquid composition of the present invention is excellent in removing the metal attached to the metal mask and the metal substrate during the manufacturing process of the flat panel display device, inter alia, alkaline earth metal and copper group elements, excellent corrosion protection effect on the lower metal plate, such as stainless, It contains a large amount of deionized water, which is easy to handle and environmentally beneficial.
도 1은 인바(Invar) 상에 마그네슘과 실버가 동시증착(cosputter)으로 증착된 금속기판의 SEM 사진이다.
도 2는 비교예 3의 잔여물이 남은 금속기판의 SEM 사진이다.
도 3은 실시예 5의 잔사가 없고, 손상이 거의 없는 금속기판의 SEM 사진이다.1 is a SEM photograph of a metal substrate on which Invar is deposited by cosputtering magnesium and silver.
2 is an SEM photograph of a metal substrate having a residue of Comparative Example 3. FIG.
3 is an SEM photograph of a metal substrate having no residue and almost no damage in Example 5. FIG.
이하 본 발명을 보다 상세하게 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명의 금속 세정액 조성물은 무기 알칼리, 유기산, 아졸계 화합물, 유기 인산 또는 그의 염 및 물을 포함하는 것을 특징으로 한다.The metal cleaning liquid composition of the present invention is characterized by containing an inorganic alkali, an organic acid, an azole compound, an organic phosphoric acid or a salt thereof, and water.
상기 무기 알칼리는 금속을 세정하는 주 성분으로, 상기 무기 알칼리의 함량은 조성물 총 중량에 대하여, 0.1 ~ 80 중량%이며, 바람직하게는 1 ~ 50 중량%이다. The inorganic alkali is a main component for cleaning the metal, and the content of the inorganic alkali is 0.1 to 80% by weight, preferably 1 to 50% by weight based on the total weight of the composition.
상기 무기 알칼리의 함량이 0.1 중량% 미만이면 세정력이 떨어져, 금속막의 제거가 용이하지 않으며, 80 중량%를 초과하면 금속의 부식 가능성이 있고, 세정액의 제조비용이 상승하여 경제성이 떨어지며, 환경적인 문제를 유발할 수 있다. If the content of the inorganic alkali is less than 0.1% by weight, the cleaning power is poor, and the removal of the metal film is not easy. If the content of the inorganic alkali exceeds 80% by weight, there is a possibility of corrosion of the metal. May cause.
상기 무기 알칼리는 수산화암모늄, 수산화나트륨, 수산화칼륨 및 이들의 혼합물로 이루어진 군으로부터 선택된 1종 이상인 것이 바람직하다.The inorganic alkali is preferably at least one selected from the group consisting of ammonium hydroxide, sodium hydroxide, potassium hydroxide and mixtures thereof.
상기 유기산은 금속막을 세정하는 또 다른 주성분으로, 상기 유기산의 함량은 조성물 총 중량에 대하여, 0.1 ~ 50 중량%이며, 바람직하게는 0.5 ~ 20 중량%이다.The organic acid is another main component for cleaning the metal film, and the content of the organic acid is 0.1 to 50% by weight, preferably 0.5 to 20% by weight based on the total weight of the composition.
상기 유기산의 함량이 0.1 중량% 미만이면 금속막의 제거가 용이하지 않으며, 50 중량% 초과이면, 실리콘 및 금속의 부식 가능성이 있고, 세정액의 제조비용이 상승하여 경제성이 떨어지며, 환경적인 문제를 유발할 수 있다.If the content of the organic acid is less than 0.1% by weight, it is not easy to remove the metal film. If the content of the organic acid is more than 50% by weight, there is a possibility of corrosion of silicon and metal, and the manufacturing cost of the cleaning solution is increased, resulting in low economical efficiency and environmental problems. have.
상기 유기산은 바람직하게는 카르복실기를 포함하는 산이며, 그 예로 포름산, 아세트산, 프로피온산, 글리옥실산, 피루브산, 글루콘산, 2-케토굴론산, 1,3-아세톤디카르본산, 옥살산, 말론산, 숙신산, 글루타르산, 아디프산, 피메르산, 마레인산, 포말산, 프탈산, 히드록시낙산, p-톨루엔술폰산, 락트산, 살리실산, 말산, 타타르산, 시트르산, 아스파라긴산 및 글루탐산 등을 들 수 있다. The organic acid is preferably an acid containing a carboxyl group, for example, formic acid, acetic acid, propionic acid, glyoxylic acid, pyruvic acid, gluconic acid, 2-ketogulonic acid, 1,3-acetone dicarboxylic acid, oxalic acid, malonic acid, Succinic acid, glutaric acid, adipic acid, pimer acid, maleic acid, formic acid, phthalic acid, hydroxybutyric acid, p-toluenesulfonic acid, lactic acid, salicylic acid, malic acid, tartaric acid, citric acid, aspartic acid and glutamic acid. .
상기 아졸계 화합물은 금속기판의 부식방지성분으로, 무기 알칼리와 유기산의 세정력에 의한 하부 금속기판의 피해를 막아주는 역할을 한다. 또한 금속막 세정을 돕는 부세정제로서도 작용한다.The azole compound is a corrosion preventing component of the metal substrate, and serves to prevent damage to the lower metal substrate by the cleaning power of the inorganic alkali and organic acid. It also acts as an auxiliary cleaner to help clean the metal film.
상기 아졸계 화합물의 함량은 조성물 총 중량에 대하여, 0.01 ~ 10 중량% 이다.The content of the azole compound is 0.01 to 10% by weight based on the total weight of the composition.
상기 아졸계 화합물의 함량이 0.01 중량% 미만이면, 부식 방지력이 저하되어, 하부 금속막이나 절연막에 피해를 주게 되고, 금속 세정력도 감소된다. 만일 10 중량% 초과이면, 세정력을 급격히 저하시키고, 환경문제와 비용 상승으로 경제성이 떨어지게 된다.If the content of the azole compound is less than 0.01% by weight, the corrosion protection is lowered, damaging the lower metal film or the insulating film, and the metal cleaning power is also reduced. If it is more than 10% by weight, the cleaning power is drastically lowered and economical efficiency is lowered due to environmental problems and rising costs.
상기 아졸계 화합물은 톨릴트리아졸, 벤조트리아졸, 트리아졸, 아미노트리아졸, 아미노테트라졸, 이미다졸, 히드록시벤조트리아졸, 메틸벤조트리아졸, 벤조트리아졸카르본산, 니트로벤조트리아졸, 피리미딘, 피롤, 피롤리딘, 피롤린 및 부틸페놀으로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하나, 이에 한정되는 것은 아니다.The azole compound is tolyltriazole, benzotriazole, triazole, aminotriazole, aminotetrazole, imidazole, hydroxybenzotriazole, methylbenzotriazole, benzotriazole carboxylic acid, nitrobenzotriazole, pyri It is preferably one or two or more selected from the group consisting of midine, pyrrole, pyrrolidine, pyrroline and butylphenol, but is not limited thereto.
상기 유기 인산 또는 그의 염은 금속기판의 부식방지성분으로, 무리 알칼리와 유기산의 세정력에 의한 하부 금속기판의 피해를 막아주는 역할을 한다. 또한 금속기판 세정을 돕는 부세정제로서도 작용한다.The organic phosphoric acid or a salt thereof is a corrosion preventing component of the metal substrate, and serves to prevent damage of the lower metal substrate due to the cleaning power of the alkali alkali and the organic acid. It also acts as a sub-cleaner to help clean metal substrates.
상기 유기 인산 또는 그의 염의 함량은 조성물 총 중량에 대하여, 0.01 ~ 10 중량%이다.The content of the organic phosphoric acid or salts thereof is 0.01 to 10% by weight, based on the total weight of the composition.
상기 유기 인산 또는 그의 염의 함량이 0.01 중량% 미만이면, 부식 방지력이 저하되어, 하부 금속기판이나 절연막에 피해를 주게 되고, 금속 세정력도 감소된다. If the content of the organic phosphoric acid or its salt is less than 0.01% by weight, the corrosion protection is lowered, damaging the lower metal substrate or the insulating film, and the metal cleaning power is also reduced.
또한, 상기 유기 인산 또는 그의 염의 함량이 10 중량% 초과이면, 세정력을 급격히 저하시키고, 환경문제를 야기하며, 비용 상승으로 인해 경제성이 떨어지게 된다.In addition, when the content of the organic phosphoric acid or its salt is more than 10% by weight, the cleaning power is sharply lowered, causing environmental problems, and the cost is lowered due to the increased cost.
상기 유기 인산 또는 그의 염은 메틸디포스폰산, 아미노트리(메틸렌포스폰산), 에틸리덴디포스폰산, 1-히드록시에틸리덴-1,1-디포스폰산, 1-히드록시프로필리덴-1,1-디포스폰산, 1-히드록시부틸리덴-1,1-디포스폰산, 에틸아미노비스(메틸렌포스폰산), 1,2-프로필렌디아민테트라(메틸렌포스폰산), 도데실아미노비스(메틸렌포스폰산), 니트로트리스(메틸렌포스폰산), 에틸렌디아민비스(메틸렌포스폰산), 에틸렌디아민테트라(메틸렌포스폰산), 헥센디아민테트라(메틸렌포스폰산) 및 디에틸렌트리아민펜타(메틸렌포스폰산), 시클로헥산디아민테트라(메틸렌포스폰산) 및 그의 염으로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하나, 이에 한정되는 것은 아니다. 여기서, 상기 유기인산의 염은 칼륨염 또는 나트륨염인 것이 바람직하다. The organic phosphoric acid or salt thereof is methyldiphosphonic acid, aminotri (methylenephosphonic acid), ethylidenediphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, 1-hydroxypropylidene-1 , 1-diphosphonic acid, 1-hydroxybutylidene-1,1-diphosphonic acid, ethylaminobis (methylenephosphonic acid), 1,2-propylenediaminetetra (methylenephosphonic acid), dodecylaminobis ( Methylenephosphonic acid), nitrotris (methylenephosphonic acid), ethylenediaminebis (methylenephosphonic acid), ethylenediaminetetra (methylenephosphonic acid), hexenediaminetetra (methylenephosphonic acid) and diethylenetriaminepenta (methylenephosphonic acid) , Cyclohexanediaminetetra (methylenephosphonic acid) and salts thereof are preferably one or two or more selected from the group consisting of, but is not limited thereto. Here, the salt of the organophosphoric acid is preferably a potassium salt or a sodium salt.
상기 물은 조성물 총 중량에 대하여 잔량으로 포함되며, 탈이온수로서, 금속 불순물이 없는 것이 바람직하다.The water is contained in the remaining amount relative to the total weight of the composition, and as deionized water, it is preferable that there is no metallic impurities.
본 발명의 세정액 조성물은 통상적으로 공지된 방법에 의해서 제조가 가능하며, 반도체 공정용의 순도를 가지는 것이 바람직하다.The cleaning liquid composition of the present invention can be produced by a conventionally known method, and preferably has a purity for a semiconductor process.
본 발명에 따른 금속 세정용 조성물이 적용되는 세정방법은 특별히 한정되지 않으며, 침지 세정법, 요동 세정법, 초음파 세정법, 샤워?스프레이 세정법, 퍼들 세정법, 브러쉬 세정법, 교반 세정법 등의 방법에 적용될 수 있다. 본 발명에서는 특히 침지 세정법 또는 초음파 세정법이 바람직하다.The cleaning method to which the metal cleaning composition according to the present invention is applied is not particularly limited, and can be applied to methods such as immersion cleaning, rocking cleaning, ultrasonic cleaning, shower-spray cleaning, puddle cleaning, brush cleaning, and stirring cleaning. In the present invention, an immersion cleaning method or an ultrasonic cleaning method is particularly preferable.
본 발명에서 세정하고자 하는 금속은 평판표시장치(FPD) 제조공정, 특히 유기전계발광표시장치(OLED) 제조공정에서 유기물 증착공정 중 금속마스크 및 금속기판에 부착되는 금속, 그 중에서도 특히 알칼리토금속과 구리족 원소이다. 본 발명의 세정용 조성물은 상기 금속의 제거에 탁월하며, 스테인레스와 같은 하부금속판을 부식시키지 않는다.
The metal to be cleaned in the present invention is a metal attached to a metal mask and a metal substrate during the organic material deposition process in a flat panel display (FPD) manufacturing process, in particular, an organic electroluminescent display (OLED) manufacturing process, in particular alkaline earth metal and copper It is a group element. The cleaning composition of the present invention is excellent for the removal of the metal and does not corrode the lower metal plate such as stainless.
이하에서, 실시예를 통하여 본 발명을 보다 상세히 설명한다. 그러나, 하기의 실시예는 본 발명을 더욱 구체적으로 설명하기 위한 것으로서, 본 발명의 범위가 하기의 실시예에 의하여 한정되는 것은 아니다. Hereinafter, the present invention will be described in more detail with reference to Examples. However, the following examples are intended to illustrate the present invention more specifically, but the scope of the present invention is not limited by the following examples.
실시예Example 1 ~ 10 및 1 to 10 and 비교예Comparative example 1 ~ 4 1-4 : 금속 세정용 조성물의 제조 및 세정: Preparation and Cleaning of Metal Cleaning Composition
표 1에 기재된 구성성분 및 조성으로 혼합하고 교반하여, 세정용 조성물을 제조하였다.
It mixed and stirred with the component and composition of Table 1, and prepared the cleaning composition.
*1): 시트르산* 1): citric acid
*2): 글리옥실산* 2): glyoxylic acid
*3): 글루콘산* 3): Gluconic Acid
*4): 옥살산* 4): Oxalic acid
*5): 숙신산* 5): Succinic acid
*6): 살리실산* 6): salicylic acid
*7): p-톨루엔술폰산* 7): p-toluenesulfonic acid
*8): 마레인산* 8): maleic acid
*9): 벤조트리아졸* 9): Benzotriazole
*10): 아미노트리아졸* 10) aminotriazole
*11): 아미노테트라졸* 11) aminotetrazole
*12): 이미다졸* 12): imidazole
*13): 피롤* 13): Pyrrole
*14): 1-히드록시프로필리덴 * 14): 1-hydroxypropylidene
*15): 1,2-프로필렌디아민테트라(메틸렌포스폰산)* 15) 1,2-propylenediaminetetra (methylenephosphonic acid)
*16): 에틸렌디아민비스(메틸렌포스폰산)* 16): ethylenediaminebis (methylenephosphonic acid)
*17): 디에틸렌트리아민펜타(메틸렌포스폰산)* 17): diethylenetriamine penta (methylenephosphonic acid)
시험예Test Example : 금속 세정용 조성물의 특성 평가: Evaluation of Properties of Metal Cleaning Composition
본 발명의 세정용 조성물의 특성 평가를 위해 인바(Invar) 위에 마그네슘(Mg)과 은(Ag)이 동시증착(cosputter)된 금속기판을 사용하였다(도 1). 침지 방식에 의하여, 실시예 1 내지 10 및 비교예 1 내지 4에서 제조된 세정용 조성물을 각각 넣고 온도를 20 ~ 80℃로 설정하여 가온한 후, 상기 금속기판을 침지시켰다. 그 다음 상기 금속막을 꺼내어 탈이온수로 세정한 후, 건조장치를 이용하여 건조하였다. 세정 및 건조 후 전자주사현미경 및 에너지 분산 분광분석 (SEM 및 EDS: HITACHI사 제조, 모델명: S-4700)을 이용하여 표면의 부식 및 손상과 같은 거칠기, 잔여물 확인 및 성분 분석을 실시하여 하기 표 2에 나타내었다.In order to evaluate the properties of the cleaning composition of the present invention, a metal substrate co-deposited with magnesium (Mg) and silver (Ag) on Invar was used (FIG. 1). By the immersion method, each of the cleaning compositions prepared in Examples 1 to 10 and Comparative Examples 1 to 4 were put, and the temperature was set to 20 to 80 ° C., followed by heating, and the metal substrate was immersed. Then, the metal film was taken out, washed with deionized water, and dried using a drying apparatus. After cleaning and drying, the surface roughness, residues such as corrosion and damage of the surface and residues were analyzed by using an electron scanning microscope and energy dispersion spectroscopy (SEM and EDS: manufactured by Hitachi, model name: S-4700). 2 is shown.
시
예
1room
city
Yes
One
시
예
2room
city
Yes
2
시
예
3room
city
Yes
3
시
예
4room
city
Yes
4
시
예
5room
city
Yes
5
시
예
6room
city
Yes
6
시
예
7room
city
Yes
7
시
예
8room
city
Yes
8
시
예
9room
city
Yes
9
시
예
10room
city
Yes
10
교
예
1ratio
School
Yes
One
교
예
2ratio
School
Yes
2
교
예
3ratio
School
Yes
3
교
예
4ratio
School
Yes
4
유무Residue
The presence or absence
유무damaged
The presence or absence
◎: 매우 우수 ○: 우수◎: very good ○: excellent
△: 양호 ×: 불량 (금속막 소실 및 잔사 발생)△: Good X: Poor (metal film disappeared and residues occurred)
표 2에 나타난 바와 같이, 본 발명에 따른 세정용 조성물은 금속에 대한 세정력이 우수하고, 금속기판의 부식 등의 손상을 일으키지 않음을 확인하였다.As shown in Table 2, the cleaning composition according to the present invention was excellent in the cleaning power for the metal, it was confirmed that does not cause damage, such as corrosion of the metal substrate.
Claims (9)
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WO2023211110A1 (en) * | 2022-04-27 | 2023-11-02 | (주)엠티아이 | Composition for cleaning metal mask and cleaning method using same |
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2010
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