TW202341513A - 太陽能電池組件 - Google Patents
太陽能電池組件 Download PDFInfo
- Publication number
- TW202341513A TW202341513A TW111147423A TW111147423A TW202341513A TW 202341513 A TW202341513 A TW 202341513A TW 111147423 A TW111147423 A TW 111147423A TW 111147423 A TW111147423 A TW 111147423A TW 202341513 A TW202341513 A TW 202341513A
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive
- conductive element
- solar cell
- conductive elements
- area
- Prior art date
Links
- 210000004027 cell Anatomy 0.000 claims description 89
- 210000003850 cellular structure Anatomy 0.000 claims description 15
- 239000010410 layer Substances 0.000 description 77
- 239000004020 conductor Substances 0.000 description 68
- 239000010408 film Substances 0.000 description 59
- 239000000758 substrate Substances 0.000 description 37
- 239000004065 semiconductor Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 15
- 239000002800 charge carrier Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 230000003667 anti-reflective effect Effects 0.000 description 5
- 230000000712 assembly Effects 0.000 description 5
- 238000000429 assembly Methods 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- -1 polysene Polymers 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229920000297 Rayon Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000002964 rayon Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical group C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
- H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/215—Geometries of grid contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
Landscapes
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2119064.0 | 2021-12-29 | ||
| GBGB2119064.0A GB202119064D0 (en) | 2021-12-29 | 2021-12-29 | Solar cell assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202341513A true TW202341513A (zh) | 2023-10-16 |
Family
ID=80111817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111147423A TW202341513A (zh) | 2021-12-29 | 2022-12-09 | 太陽能電池組件 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20250072160A1 (https=) |
| EP (1) | EP4457871A1 (https=) |
| JP (1) | JP2024545822A (https=) |
| KR (1) | KR20240125674A (https=) |
| CN (1) | CN118476036A (https=) |
| AU (1) | AU2022429461A1 (https=) |
| GB (1) | GB202119064D0 (https=) |
| TW (1) | TW202341513A (https=) |
| WO (1) | WO2023126150A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN121712123A (zh) * | 2026-02-05 | 2026-03-20 | 晶科能源(海宁)有限公司 | 一种光伏组件 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10239845C1 (de) * | 2002-08-29 | 2003-12-24 | Day4 Energy Inc | Elektrode für fotovoltaische Zellen, fotovoltaische Zelle und fotovoltaischer Modul |
| JP2004363293A (ja) * | 2003-06-04 | 2004-12-24 | Sharp Corp | 太陽電池モジュール及びその製造方法 |
| KR101889842B1 (ko) * | 2014-11-26 | 2018-08-20 | 엘지전자 주식회사 | 태양 전지 모듈 |
| JP2018056145A (ja) * | 2015-02-06 | 2018-04-05 | 長州産業株式会社 | 光発電モジュール |
| KR20200039184A (ko) * | 2018-10-05 | 2020-04-16 | 엘지전자 주식회사 | 태양 전지 패널 |
-
2021
- 2021-12-29 GB GBGB2119064.0A patent/GB202119064D0/en not_active Ceased
-
2022
- 2022-12-09 WO PCT/EP2022/085154 patent/WO2023126150A1/en not_active Ceased
- 2022-12-09 TW TW111147423A patent/TW202341513A/zh unknown
- 2022-12-09 AU AU2022429461A patent/AU2022429461A1/en active Pending
- 2022-12-09 KR KR1020247025292A patent/KR20240125674A/ko active Pending
- 2022-12-09 CN CN202280086872.7A patent/CN118476036A/zh active Pending
- 2022-12-09 EP EP22835304.1A patent/EP4457871A1/en active Pending
- 2022-12-09 US US18/725,081 patent/US20250072160A1/en active Pending
- 2022-12-09 JP JP2024539318A patent/JP2024545822A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023126150A1 (en) | 2023-07-06 |
| AU2022429461A1 (en) | 2024-06-06 |
| CN118476036A (zh) | 2024-08-09 |
| GB202119064D0 (en) | 2022-02-09 |
| JP2024545822A (ja) | 2024-12-12 |
| US20250072160A1 (en) | 2025-02-27 |
| KR20240125674A (ko) | 2024-08-19 |
| EP4457871A1 (en) | 2024-11-06 |
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