TW202339404A - Power supply device with high output stability - Google Patents
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Description
本發明係關於一種電源供應器,特別係關於一種高輸出穩定度之電源供應器。The present invention relates to a power supply, and in particular to a power supply with high output stability.
在傳統電源供應器中,若要提升其電壓增益,則必須地降低其切換頻率。然而,假使調整切換頻率之時機不恰當,有可能導致電源供應器之對應電容電位發生嚴重震盪,從而導致電源供應器之能量供應中斷。有鑑於此,勢必要提出一種全新之解決方案,以克服先前技術所面臨之困境。In a traditional power supply, to increase its voltage gain, its switching frequency must be reduced. However, if the timing of adjusting the switching frequency is inappropriate, it may cause serious oscillations in the corresponding capacitor potential of the power supply, resulting in interruption of the energy supply of the power supply. In view of this, it is necessary to propose a new solution to overcome the difficulties faced by previous technologies.
在較佳實施例中,本發明提出一種高輸出穩定度之電源供應器,包括:一輸入切換電路,根據一輸入電位、一第一脈波寬度調變電位,以及一第二脈波寬度調變電位來產生一切換電位;一變壓器,包括一主線圈、一第一副線圈,以及一第二副線圈,其中該變壓器內建一漏電感器和一激磁電感器,而該主線圈係經由該漏電感器接收該切換電位;一第一電容器,耦接至該主線圈;一輸出級電路,耦接至該第一副線圈和該第二副線圈,並用於產生一輸出電位;一脈波寬度調變積體電路,產生該第一脈波寬度調變電位和該第二脈波寬度調變電位;以及一延遲控制電路,包括耦接至該輸出級電路之一第一電阻器,其中若偵測到無任何電流流經該第一電阻器,則該延遲控制電路將於一延遲時間內暫時禁能該激磁電感器。In a preferred embodiment, the present invention proposes a power supply with high output stability, including: an input switching circuit that modulates the potential according to an input potential, a first pulse width, and a second pulse width. Modulating the potential to generate a switching potential; a transformer including a main coil, a first auxiliary coil, and a second auxiliary coil, wherein the transformer has a built-in leakage inductor and a magnetizing inductor, and the main coil The switching potential is received through the leakage inductor; a first capacitor is coupled to the main coil; an output stage circuit is coupled to the first secondary coil and the second secondary coil and is used to generate an output potential; a pulse width modulation integrated circuit that generates the first pulse width modulation potential and the second pulse width modulation potential; and a delay control circuit including a first pulse width modulation circuit coupled to the output stage circuit A resistor, if it is detected that no current flows through the first resistor, the delay control circuit will temporarily disable the exciting inductor within a delay time.
為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are listed below and described in detail with reference to the accompanying drawings.
在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。Certain words are used in the specification and patent claims to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same component. This specification and the patent application do not use differences in names as a way to distinguish components, but differences in functions of components as a criterion for distinction. The words "include" and "include" mentioned throughout the specification and the scope of the patent application are open-ended terms, and therefore should be interpreted as "include but not limited to." The term "approximately" means that within an acceptable error range, those skilled in the art can solve the technical problem and achieve the basic technical effect within a certain error range. In addition, the word "coupling" in this specification includes any direct and indirect electrical connection means. Therefore, if a first device is coupled to a second device, it means that the first device can be directly electrically connected to the second device, or indirectly electrically connected to the second device via other devices or connections. Two devices.
第1圖係顯示根據本發明一實施例所述之電源供應器100之示意圖。例如,電源供應器100可應用於桌上型電腦、筆記型電腦,或一體成形電腦。如第1圖所示,電源供應器100包括:一輸入切換電路110、一變壓器120、一第一電容器C1、一輸出級電路130、一脈波寬度調變積體電路(Pulse Width Modulation Integrated Circuit,PWM IC)140,以及一延遲控制電路150。必須注意的是,雖然未顯示於第1圖中,但電源供應器100更可包括其他元件,例如:一穩壓器或(且)一負回授電路。Figure 1 is a schematic diagram of a
輸入切換電路110可根據一輸入電位VIN、一第一脈波寬度調變電位VM1,以及一第二脈波寬度調變電位VM2來產生一切換電位VW。輸入電位VIN可來自一外部輸入電源,其中輸入電位VIN可為具有任意位準之一直流電位。例如,直流電位之電位位準可介於380V至420V之間,但亦不僅限於此。變壓器120包括一主線圈121、一第一副線圈122,以及一第二副線圈123,其中變壓器120更可內建一漏電感器LR和一激磁電感器LM。主線圈121、漏電感器LR,以及激磁電感器LM皆可位於變壓器120之同一側,而第一副線圈122和第二副線圈123則皆可位於變壓器120之相對另一側。主線圈121可經由漏電感器LR來接收切換電位VW,而第一副線圈122和第二副線圈123皆可回應於切換電位VW來進行操作。第一電容器C1係耦接至主線圈121。例如,漏電感器LR、激磁電感器LM,以及第一電容器C1三者可共同形成一諧振槽(Resonant Tank)。輸出級電路130係耦接至第一副線圈122和第二副線圈123,並可用於產生一輸出電位VOUT,例如,輸出電位VOUT可為另一直流電位,其電位位準可介於18V至20V之間,但亦不僅限於此。脈波寬度調變積體電路140可用於產生第一脈波寬度調變電位VM1和第二脈波寬度調變電位VM2。延遲控制電路150包括耦接至輸出級電路130之一第一電阻器R1。延遲控制電路150可持續地監控其第一電阻器R1之操作狀態。若偵測到無任何電流流經第一電阻器R1,則延遲控制電路150將可於一延遲時間TD內暫時禁能激磁電感器LM。在此設計下,延遲控制電路150可藉由延後激磁電感器LM參與前述諧振槽之共振操作來有效地避免第一電容器C1之電容電位VR發生非理想震盪。根據實際量測結果,本發明之設計將能大幅提升電源供應器100之輸出穩定度。The
以下實施例將介紹電源供應器100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。The following embodiments will introduce the detailed structure and operation of the
第2圖係顯示根據本發明一實施例所述之電源供應器200之電路圖。在第2圖之實施例中,電源供應器200具有一輸入節點NIN和一輸出節點NOUT,並包括:一輸入切換電路210、一變壓器220、一第一電容器C1、一輸出級電路230、一脈波寬度調變積體電路240,以及一延遲控制電路250。電源供應器200之輸入節點NIN可由一外部輸入電源處接收一輸入電位VIN,而電源供應器200之輸出節點NOUT可用於輸出一輸出電位VOUT至一電子裝置(未顯示)。Figure 2 is a circuit diagram of a
輸入切換電路210包括一第一電晶體M1和一第二電晶體M2。例如,第一電晶體M1和第二電晶體M2可各自為一N型金氧半場效電晶體(N-type Metal-Oxide-Semiconductor Field-Effect Transistor,NMOSFET)。第一電晶體M1具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第一電晶體M1之控制端係用於接收一第一脈波寬度調變電位VM1,第一電晶體M1之第一端係耦接至一第一節點N1以輸出一切換電位VW,而第一電晶體M1之第二端係耦接至輸入節點NIN。第二電晶體M2具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第二電晶體M2之控制端係用於接收一第二脈波寬度調變電位VM2,第二電晶體M2之第一端係耦接至一接地電位VSS(例如:0V),而第二電晶體M2之第二端係耦接至第一節點N1。The
變壓器220包括一主線圈221、一第一副線圈222,以及一第二副線圈223,其中變壓器220更內建一漏電感器LR和一激磁電感器LM。漏電感器LR和激磁電感器LM皆可為變壓器220製造時所附帶產生之固有元件,其並非外部獨立元件。漏電感器LR、主線圈221,以及激磁電感器LM皆可位於變壓器220之同一側(例如:一次側),而第一副線圈222和第二副線圈223則皆可位於變壓器220之相對另一側(例如:二次側,其可與一次側互相隔離開來)。漏電感器LR具有一第一端和一第二端,其中漏電感器LR之第一端係耦接至第一節點N1以接收切換電位VW,而漏電感器LR之第二端係耦接至一第二節點N2。主線圈221具有一第一端和一第二端,其中主線圈221之第一端係耦接至第二節點N2,而主線圈221之第二端係耦接至一第三節點N3。激磁電感器LM具有一第一端和一第二端,其中激磁電感器LM之第一端係耦接至第二節點N2,而激磁電感器LM之第二端係耦接至一第四節點N4。第一電容器C1具有一第一端和一第二端,其中第一電容器C1之第一端係耦接至第三節點N3,而第一電容器C1之第二端係耦接至接地電位VSS。在一些實施例中,漏電感器LR、激磁電感器LM,以及第一電容器C1三者可共同形成一諧振槽,其可用於決定電源供應器200之諧振頻率及對應之增益值。另外,一諧振電流IR可流經漏電感器LR,而一電容電位VR可形成於第三節點N3處。第一副線圈222具有一第一端和一第二端,其中第一副線圈222之第一端係耦接至一第五節點N5,而第一副線圈222之第二端係耦接至一共同節點NCM。例如,共同節點NCM可視為另一接地電位,其可與前述之接地電位VSS相同或相異。第二副線圈223具有一第一端和一第二端,其中第二副線圈223之第一端係耦接至共同節點NCM,而第二副線圈223之第二端係耦接至一第六節點N6。The
輸出級電路230包括一第一二極體D1、一第二二極體D2,以及一第二電容器C2。第一二極體D1具有一陽極和一陰極,其中第一二極體D1之陽極係耦接至第五節點N5,而第一二極體D1之陰極係耦接至輸出節點NOUT。第二二極體D2具有一陽極和一陰極,其中第二二極體D2之陽極係耦接至第六節點N6,而第二二極體D2之陰極係耦接至輸出節點NOUT。第二電容器C2具有一第一端和一第二端,其中第二電容器C2之第一端係耦接至輸出節點NOUT,而第二電容器C2之第二端係耦接至一第七節點N7。The
脈波寬度調變積體電路240可產生第一脈波寬度調變電位VM1和第二脈波寬度調變電位VM2。第一脈波寬度調變電位VM1和第二脈波寬度調變電位VM2於電源供應器200初始化時可維持於一固定電位,而在電源供應器200進入正常使用階段後則可提供週期性之時脈波形。在一些實施例中,第一脈波寬度調變電位VM1和第二脈波寬度調變電位VM2可具有互補(Complementary)之邏輯位準。在另一些實施例中,第一脈波寬度調變電位VM1和第二脈波寬度調變電位VM2可具有相同波形但其間存在一相位差,使得兩者不會同時為高邏輯位準。必須理解的是,第一脈波寬度調變電位VM1和第二脈波寬度調變電位VM2之操作頻率皆可視為電源供應器200之切換頻率。The pulse width modulation integrated
延遲控制電路250包括一減法器252、一計時器254、一第三電晶體M3、一第四電晶體M4、一第一電阻器R1,以及一第二電阻器R2。例如,第三電晶體M3和第四電晶體M4可各自為一N型金氧半場效電晶體。The
第一電阻器R1具有一第一端和一第二端,其中第一電阻器R1之第一端係耦接至共同節點NCM,而第一電阻器R1之第二端係耦接至第七節點N7。減法器252可取得第七節點N7處之一第一電位V1和共同節點NCM處之一第二電位V2,並可計算出第一電位V1和第二電位V2之間之一電位差ΔV(例如:
,抑或
)。必須理解的是,此電位差ΔV即等同於第一電阻器R1之兩端跨壓。在一些實施例中,若電位差ΔV恰等於0,則代表無任何電流流經第一電阻器R1,而減法器252將可輸出具有高邏輯位準之一第一控制電位VC1。在另一些實施例中,若電位差ΔV不等於0,則減法器252將可輸出具有低邏輯位準之第一控制電位VC1,或是完全不輸出第一控制電位VC1。
The first resistor R1 has a first terminal and a second terminal, wherein the first terminal of the first resistor R1 is coupled to the common node NCM, and the second terminal of the first resistor R1 is coupled to the seventh Node N7. The
計時器254係耦接至減法器252。當計時器254接收到來自減法器252之具有高邏輯位準之第一控制電位VC1時,計時器254將可於一延遲時間TD內提供具有高邏輯位準之一第二控制電位VC2。例如,延遲時間TD可介於460ns至540ns之間,但亦不僅限於此。反之,在前述之延遲時間TD以外,第二控制電位VC2皆可維持於低邏輯位準。
第三電晶體M3具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第三電晶體M3之控制端係耦接至一第八節點N8,第三電晶體M3之第一端係耦接至第三節點N3,而第三電晶體M3之第二端係耦接至第四節點N4。第四電晶體M4具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第四電晶體M4之控制端係用於接收第二控制電位VC2,第四電晶體M4之第一端係耦接至接地電位VSS,而第四電晶體M4之第二端係耦接至第八節點N8。第二電阻器R2具有一第一端和一第二端,其中第二電阻器R2之第一端係耦接至一驅動節點NE,而第二電阻器R2之第二端係耦接至第八節點N8。The third transistor M3 has a control terminal (for example: a gate), a first terminal (for example: a source), and a second terminal (for example: a drain), wherein the control terminal of the third transistor M3 The terminal is coupled to an eighth node N8, the first terminal of the third transistor M3 is coupled to the third node N3, and the second terminal of the third transistor M3 is coupled to the fourth node N4. The fourth transistor M4 has a control terminal (for example: a gate), a first terminal (for example: a source), and a second terminal (for example: a drain), wherein the control terminal of the fourth transistor M4 The terminal is used to receive the second control potential VC2, the first terminal of the fourth transistor M4 is coupled to the ground potential VSS, and the second terminal of the fourth transistor M4 is coupled to the eighth node N8. The second resistor R2 has a first terminal and a second terminal, wherein the first terminal of the second resistor R2 is coupled to a driving node NE, and the second terminal of the second resistor R2 is coupled to the driving node NE. Eight nodes N8.
初始時,脈波寬度調變積體電路240更可先產生一驅動電位VE和一供應電位VDD,其中具有高邏輯位準之驅動電位VE可輸出至驅動節點NE,而減法器252則可由供應電位VDD來進行供電。接著,在一些實施例中,電源供應器200將可依序操作於一第一階段T1、一第二階段T2、一第三階段T3,以及一第四階段T4,其操作原理可分別如下列所述。Initially, the pulse width modulation integrated
第3圖係顯示根據本發明一實施例所述之電源供應器200之信號波形圖,其中橫軸代表時間,而縱軸代表電位位準或電流值。首先,在第一階段T1期間,第一電晶體M1被導通,而第二電晶體M2被關閉。此時,僅有漏電感器LR與第一電容器C1發生共振。另外,流經第一二極體D1之一第一電流I1先逐漸變大,然後再逐漸變小。Figure 3 shows a signal waveform diagram of the
在第二階段T2期間,第一電晶體M1仍被導通,而第二電晶體M2仍被關閉。由於第一二極體D1之第一電流I1已下降至0且無任何電流流經第一電阻器R1,故計時器254將可於延遲時間TD內提供具有高邏輯位準之第二控制電位VC2,以暫時導通第四電晶體M4。亦即,於延遲時間TD內,第三電晶體M3將會暫時被關閉,使得激磁電感器LM無法參與前述之諧振槽。接著,當延遲時間TD已屆滿時,第二控制電位VC2會由高邏輯位準切換回低邏輯位準。此時,激磁電感器LM和漏電感器LR會同時與第一電容器C1發生共振。During the second phase T2, the first transistor M1 is still turned on, and the second transistor M2 is still turned off. Since the first current I1 of the first diode D1 has dropped to 0 and no current flows through the first resistor R1, the
在第三階段T3期間,第一電晶體M1被關閉,而第二電晶體M2被導通。此時,僅有漏電感器LR與第一電容器C1發生共振。另外,流經第二二極體D2之一第二電流I2先逐漸變大,然後再逐漸變小。During the third phase T3, the first transistor M1 is turned off and the second transistor M2 is turned on. At this time, only the leakage inductor LR resonates with the first capacitor C1. In addition, the second current I2 flowing through the second diode D2 first gradually becomes larger, and then gradually becomes smaller.
在第四階段T4期間,第一電晶體M1仍被關閉,而第二電晶體M2仍被導通。由於第二二極體D2之第二電流I2已下降至0且無任何電流流經第一電阻器R1,故計時器254將可於延遲時間TD內提供具有高邏輯位準之第二控制電位VC2,以暫時導通第四電晶體M4。亦即,於延遲時間TD內,第三電晶體M3將會暫時被關閉,使得激磁電感器LM無法參與前述之諧振槽。接著,當延遲時間TD已屆滿時,第二控制電位VC2會由高邏輯位準切換回低邏輯位準。此時,激磁電感器LM和漏電感器LR會同時與第一電容器C1發生共振。During the fourth phase T4, the first transistor M1 is still turned off, and the second transistor M2 is still turned on. Since the second current I2 of the second diode D2 has dropped to 0 and no current flows through the first resistor R1, the
第4圖係顯示傳統電源供應器之信號波形圖,其中橫軸代表時間,而縱軸代表電位位準或電流值。如第4圖所示,若於第二階段T2期間調整傳統電源供應器之切換頻率,則對應之諧振電流IR可能下滑,且對應之電容電位VR可能發生嚴重震盪,此將對傳統電源供應器之輸出穩定度造成較大之負面影響。Figure 4 shows a signal waveform diagram of a traditional power supply, in which the horizontal axis represents time and the vertical axis represents potential level or current value. As shown in Figure 4, if the switching frequency of the traditional power supply is adjusted during the second stage T2, the corresponding resonant current IR may decline, and the corresponding capacitor potential VR may oscillate severely, which will have a negative impact on the traditional power supply. The output stability will have a greater negative impact.
第5圖係顯示根據本發明一實施例所述之電源供應器200之信號波形圖,其中橫軸代表時間,而縱軸代表電位位準或電流值。根據第5圖之量測結果,若激磁電感器LM參與前述諧振槽之共振操作已實質延後一延遲時間TD,則將可完全避免諧振電流IR之下滑及電容電位VR之非理想震盪。換言之,即使所提之電源供應器200於第二階段T2或第四階段T4期間進行切換頻率之調整,其整體仍可提供極高之輸出穩定度,從而可克服傳統設計之重大缺陷。Figure 5 shows a signal waveform diagram of the
本發明提出一種新穎之電源供應器。根據實際量測結果,使用前述設計之電源供應器其輸出穩定度將可大幅提升,故其很適合應用於各種各式之裝置當中。The present invention proposes a novel power supply. According to the actual measurement results, the output stability of the power supply using the above-mentioned design can be greatly improved, so it is very suitable for use in various devices.
值得注意的是,以上所述之電位、電流、電阻值、電感值、電容值,以及其餘元件參數均非為本發明之限制條件。設計者可以根據不同需要調整這些設定值。本發明之電源供應器並不僅限於第1-5圖所圖示之狀態。本發明可以僅包括第1-5圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之電源供應器當中。雖然本發明之實施例係使用金氧半場效電晶體為例,但本發明並不僅限於此,本技術領域人士可改用其他種類之電晶體,例如:接面場效電晶體,或是鰭式場效電晶體等等,而不致於影響本發明之效果。It is worth noting that the above-mentioned potential, current, resistance value, inductance value, capacitance value, and other component parameters are not limiting conditions of the present invention. Designers can adjust these settings according to different needs. The power supply of the present invention is not limited to the state shown in Figures 1-5. The present invention may only include any one or multiple features of any one or multiple embodiments of Figures 1-5. In other words, not all features shown in the figures need to be implemented in the power supply of the present invention at the same time. Although the embodiment of the present invention uses a metal oxide semi-field effect transistor as an example, the present invention is not limited thereto. Those skilled in the art can use other types of transistors, such as junction field effect transistors or fins. type field effect transistor, etc., without affecting the effect of the present invention.
在本說明書以及申請專利範圍中的序數,例如「第一」、「第二」、「第三」等等,彼此之間並沒有順序上的先後關係,其僅用於標示區分兩個具有相同名字之不同元件。The ordinal numbers in this specification and the scope of the patent application, such as "first", "second", "third", etc., have no sequential relationship with each other. They are only used to distinguish two items with the same Different components with names.
本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention is disclosed above in terms of preferred embodiments, they are not intended to limit the scope of the present invention. Anyone skilled in the art can make slight changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.
100,200:電源供應器 110,210:輸入切換電路 120,220:變壓器 121,221:主線圈 122,222:第一副線圈 123,223:第二副線圈 130,230:輸出級電路 140,240:脈波寬度調變積體電路 150,250:延遲控制電路 252:減法器 254:計時器 C1:第一電容器 C2:第二電容器 D1:第一二極體 D2:第二二極體 I1:第一電流 I2:第二電流 IR:諧振電路 LM:激磁電感器 LR:漏電感器 M1:第一電晶體 M2:第二電晶體 M3:第三電晶體 M4:第四電晶體 N1:第一節點 N2:第二節點 N3:第三節點 N4:第四節點 N5:第五節點 N6:第六節點 N7:第七節點 N8:第八節點 NCM:共同節點 NIN:輸入節點 NE:驅動節點 NOUT:輸出節點 R1:第一電阻器 R2:第二電阻器 T1:第一階段 T2:第二階段 T3:第三階段 T4:第四階段 TD:延遲時間 V1:第一電位 V2:第二電位 VC1:第一控制電位 VC2:第二控制電位 VDD:供應電位 VE:驅動電位 VIN:輸入電位 VM1:第一脈波寬度調變電位 VM2:第二脈波寬度調變電位 VOUT:輸出電位 VR:電容電位 VSS:接地電位 VW:切換電位 ΔV:電位差 100,200:Power supply 110,210: Input switching circuit 120,220:Transformer 121,221: Main coil 122,222: first secondary coil 123,223: Second secondary coil 130,230: Output stage circuit 140,240: Pulse width modulation integrated circuit 150,250: Delay control circuit 252:Subtractor 254: timer C1: first capacitor C2: Second capacitor D1: first diode D2: Second diode I1: first current I2: second current IR: resonant circuit LM: Magnetizing inductor LR: leakage inductor M1: the first transistor M2: Second transistor M3: The third transistor M4: The fourth transistor N1: first node N2: second node N3: The third node N4: fourth node N5: fifth node N6: The sixth node N7: The seventh node N8: The eighth node NCM: common node NIN: input node NE: driver node NOUT: output node R1: first resistor R2: second resistor T1: first stage T2: The second stage T3: The third stage T4: The fourth stage TD: delay time V1: first potential V2: second potential VC1: first control potential VC2: second control potential VDD: supply potential VE: drive potential VIN: input potential VM1: first pulse width modulation potential VM2: second pulse width modulation potential VOUT: output potential VR: capacitor potential VSS: ground potential VW: switching potential ΔV: potential difference
第1圖係顯示根據本發明一實施例所述之電源供應器之示意圖。 第2圖係顯示根據本發明一實施例所述之電源供應器之電路圖。 第3圖係顯示根據本發明一實施例所述之電源供應器之信號波形圖。 第4圖係顯示傳統電源供應器之信號波形圖。 第5圖係顯示根據本發明一實施例所述之電源供應器之信號波形圖。 Figure 1 is a schematic diagram of a power supply according to an embodiment of the present invention. Figure 2 is a circuit diagram showing a power supply according to an embodiment of the present invention. Figure 3 shows a signal waveform diagram of a power supply according to an embodiment of the present invention. Figure 4 shows the signal waveform diagram of a traditional power supply. Figure 5 shows a signal waveform diagram of a power supply according to an embodiment of the present invention.
100:電源供應器 100:Power supply
110:輸入切換電路 110: Input switching circuit
120:變壓器 120:Transformer
121:主線圈 121: Main coil
122:第一副線圈 122: First secondary coil
123:第二副線圈 123: Second secondary coil
130:輸出級電路 130:Output stage circuit
140:脈波寬度調變積體電路 140: Pulse width modulation integrated circuit
150:延遲控制電路 150: Delay control circuit
C1:第一電容器 C1: first capacitor
LM:激磁電感器 LM: Magnetizing inductor
LR:漏電感器 LR: leakage inductor
R1:第一電阻器 R1: first resistor
TD:延遲時間 TD: delay time
VIN:輸入電位 VIN: input potential
VM1:第一脈波寬度調變電位 VM1: first pulse width modulation potential
VM2:第二脈波寬度調變電位 VM2: second pulse width modulation potential
VOUT:輸出電位 VOUT: output potential
VR:電容電位 VR: capacitor potential
VW:切換電位 VW: switching potential
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