TW202339044A - Apparatus for heating chemical liquid and system for treating substrate with the apparatus - Google Patents

Apparatus for heating chemical liquid and system for treating substrate with the apparatus Download PDF

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TW202339044A
TW202339044A TW111110161A TW111110161A TW202339044A TW 202339044 A TW202339044 A TW 202339044A TW 111110161 A TW111110161 A TW 111110161A TW 111110161 A TW111110161 A TW 111110161A TW 202339044 A TW202339044 A TW 202339044A
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chemical liquid
mentioned
heating element
heating device
substrate
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TW111110161A
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史允基
金度延
許弼覠
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韓商細美事有限公司
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Abstract

There are provided an apparatus for heating a chemical liquid that heats a chemical liquid using a heating element with a light source as a medium, and a system for treating a substrate with the apparatus. The apparatus for heating a chemical liquid includes: a flow path provided as a path through which a chemical liquid used to treat a substrate passes; a heating element disposed to surround at least a portion of the flow path; and a light source irradiating the heating element with light, wherein the heating element is heated using photon excitation, and heats the chemical liquid.

Description

化學液加熱裝置以及具有該加熱裝置的基板處理系統Chemical liquid heating device and substrate processing system having the same

本發明是有關化學液加熱裝置以及具有該加熱裝置的基板處理系統。更詳細的說是在清洗基板時會適用之化學液加熱裝置以及具有該加熱裝置的基板處理系統。The present invention relates to a chemical liquid heating device and a substrate processing system having the heating device. More specifically, there is a chemical liquid heating device suitable for cleaning substrates and a substrate processing system having the heating device.

製作半導體元件之製程,可在半導體生產設備內連續進行,並分為前製程與後製程。The process of manufacturing semiconductor components can be carried out continuously in semiconductor production equipment and is divided into pre-process and post-process.

半導體生產設備為生產半導體元件,一般都設置在定義為FAB的空間。Semiconductor production equipment is used to produce semiconductor components and is generally set up in a space defined as FAB.

前製程是指在晶圓 (Wafer) 上形成電路圖形以完成晶片 (Chip) 的過程。前製程會包含晶圓上形成薄膜之沈積製程 (Deposition Process),利用光罩 (Photo Mask) 在薄膜上轉刻光阻劑 (Photo Resist) 微影製程 (Photo-Lithography Process),在晶圓上為形成電路圖形,利用化學物或是反應性氣體,將不必要的部位,以選擇性清除之蝕刻製程 (Etching Process),去除蝕刻後殘留的光阻劑之灰化(Ashing) 的灰化製程 (Ashing Process),在連接電路圖形的部位離子注入,使其持有電子元件之特性的離子注入製程 (Ion Implantation Process),在晶圓上去除汙染源之清洗製程 (Cleaning Process)。The front-end process refers to the process of forming circuit patterns on the wafer to complete the chip. The pre-process will include the Deposition Process to form a thin film on the wafer, using a photo mask to transfer the photoresist to the thin film, and the Photo-Lithography Process to transfer the photoresist to the wafer. In order to form circuit patterns, chemicals or reactive gases are used to selectively remove unnecessary parts through the etching process (Etching Process), and the ashing process (Ashing) to remove the photoresist remaining after etching. (Ashing Process), the ion implantation process (Ion Implantation Process) that injects ions into the area connected to the circuit pattern so that it has the characteristics of electronic components, and the cleaning process (Cleaning Process) that removes contamination sources on the wafer.

後製程是將前製程所完成的製品性能做評鑑。由後製程來檢查晶圓上各個晶片是否會啟動並選出良品和不良品的晶圓檢查製程、切割 (Dicing)、黏晶 (Die Bonding)、焊線(Wire Bonding),封裝(Molding)、刻印(Marking)等,將各個晶片切段或分割,使其具備製品形狀之包裝製程 (Package Process),經過電力特性檢查、燒機 (Burn-In) 檢查等,最終確定製品特性和安全性之最終檢查製程等。The post-processing process is to evaluate the performance of the products completed by the previous process. The post-processing process is used to check whether each chip on the wafer will start and select good and defective wafer inspection processes, cutting (Dicing), die bonding (Die Bonding), wire bonding (Wire Bonding), packaging (Molding), and marking (Marking), etc., the packaging process of slicing or dividing each chip into product shapes (Package Process). After electrical characteristics inspection, burn-in inspection, etc., the final product characteristics and safety are determined. Check the manufacturing process, etc.

解決之課題:Problems solved:

為引起晶圓外型上之變化而進行FAB 製程時,會在晶圓表面殘留化學性/物理性殘留物,要清除此殘留物的製程為清洗製程。When the FAB process is performed to cause changes in the wafer appearance, chemical/physical residues will remain on the wafer surface. The process to remove this residue is the cleaning process.

清洗製程大致分為三種,利用化學溶液之溼式洗淨 (Wet Cleaning),利用溶液以外之媒體的乾式洗淨 (Dry Cleaning),溼式洗淨與乾式洗淨之間的中間型態為蒸氣洗淨 (Vapor Cleaning) 等。Cleaning processes are roughly divided into three types: wet cleaning using chemical solutions, and dry cleaning using media other than solutions. The intermediate type between wet cleaning and dry cleaning is steam. Vapor Cleaning, etc.

溼式洗淨來說,利用異丙醇(IPA)、去離子 (DI) 水等之化學液可以洗淨基板,此時化學液經過加熱後可使用於基板之清洗。但是在過去由於使用阻抗體 (電阻器) 來加熱化學液,而清洗製程時會產生雜質(Particle),造成良率降低。For wet cleaning, chemical liquids such as isopropyl alcohol (IPA) and deionized (DI) water can be used to clean the substrate. At this time, the chemical liquid can be used to clean the substrate after being heated. However, in the past, due to the use of resistors (resistors) to heat chemical liquids, impurities (particles) were produced during the cleaning process, resulting in lower yields.

在本發明中要解決之課題是,利用以光源為媒介之發熱體來加熱化學液的化學液加熱裝置以具有此加熱裝置之基板處理系統之提供。The problem to be solved in the present invention is to provide a chemical liquid heating device that uses a heating element using a light source as a medium to heat a chemical liquid, and a substrate processing system having the heating device.

本發明的課題不只侷限於上述課題,在上述未提起的其他課題,本區技術人員將從以下描述清楚理解。The subjects of the present invention are not limited to the above-mentioned subjects, and other subjects not mentioned above will be clearly understood by those skilled in the art from the following description.

解決方式:Solution:

為達成上述課題,本發明的化學液加熱裝置的一實施態樣 (aspect) 是處理基板時使用之化學液通過的路徑之流道;將上述流道 (流動路徑) 配置成圍繞至少其一部份的發熱體;並包含在上述發熱體照射光之光源,上述發熱體是利用光子激發 (Photon Excitation) 來發熱,並加熱於上述化學液。In order to achieve the above object, an aspect of the chemical liquid heating device of the present invention is a flow channel through which a chemical liquid used when processing a substrate passes; the flow channel (flow path) is arranged to surround at least a part thereof. and a light source that irradiates light on the above-mentioned heating element. The above-mentioned heating element generates heat by photon excitation and is heated in the above-mentioned chemical liquid.

上述化學液加熱裝置,也會包含覆蓋上述發熱體之覆蓋配件。The above-mentioned chemical liquid heating device will also include a covering accessory covering the above-mentioned heating element.

上述覆蓋配件可以使上述光通過。The above-mentioned covering fitting allows the above-mentioned light to pass through.

上述覆蓋配件也可以包含石英 (Quartz) 來製作。The above covering accessories can also be made containing Quartz.

上述發熱體在上述化學液通過上述流道之前,可以升溫至預先規定的溫度。The heating element may be heated to a predetermined temperature before the chemical liquid passes through the flow channel.

上述發熱體亦可以不會與上述化學液反應之物質為素材來製作。The above-mentioned heating element may also be made of a material that does not react with the above-mentioned chemical liquid.

上述發熱體亦可以用單晶矽製作。The above-mentioned heating element can also be made of single crystal silicon.

上述發熱體是從矽 (Si)、碳化矽 (SiC)、二氧化矽 (SiO 2) 及氮化鋁 (AlN) 中,至少包含其一成分來製作。 The above-mentioned heating element is made from silicon (Si), silicon carbide (SiC), silicon dioxide (SiO 2 ), and aluminum nitride (AlN), and contains at least one component thereof.

上述發熱體在寬度方向是以十字形態或是環狀形態的其中一個型態。The above-mentioned heating element has one of a cross shape or an annular shape in the width direction.

上述化學液加熱裝置,更包含連接在上述流道之排放口,而量測上述化學液的溫度的溫度感應器,以上述化學液的量測溫度為基礎,可確認上述發熱體是否有升溫。The above-mentioned chemical liquid heating device further includes a temperature sensor connected to the discharge port of the above-mentioned flow channel and measuring the temperature of the above-mentioned chemical liquid. Based on the measured temperature of the above-mentioned chemical liquid, it can confirm whether the above-mentioned heating element has heated up.

上述光源是可以包含發光二極體(LED)光源以及雷射二極體(LD)光源中的其中一個光源。The above-mentioned light source may include one of a light-emitting diode (LED) light source and a laser diode (LD) light source.

上述化學液加熱裝置在上述發熱體配置成包圍部份流道時,還可以包含側壁配件來包圍其剩餘部分。When the heating element is configured to surround part of the flow channel, the chemical liquid heating device may further include a side wall fitting to surround the remaining portion.

上述側壁配件亦可是與上述化學液,不會反應之物質作為素材來製作。The above-mentioned side wall fittings can also be made of materials that do not react with the above-mentioned chemical liquid.

為達成上述課題,本發明的化學液加熱裝置之另一實施態樣為,處理基板用化學液要流過的流道;配置成為至少包圍上述流道的一部份的發熱體;在上述發熱體照射光之光源;以及覆蓋住上述發熱體,並使上述光通過的覆蓋配件,上述發熱體是利用光子激發 (Photon Excitation) 來發熱,並加熱上述化學液。In order to achieve the above object, another embodiment of the chemical liquid heating device of the present invention is: a flow channel through which a chemical liquid for processing a substrate flows; a heating element arranged to surround at least a part of the flow channel; in the above-mentioned heat generating A light source that irradiates the body with light; and a covering accessory that covers the above-mentioned heating element and allows the above-mentioned light to pass through. The above-mentioned heating element uses photon excitation to generate heat and heat the above-mentioned chemical liquid.

為達成上述課題,本發明的基板處理系統的一實施態樣是處理基板時使用之化學液的儲存化學液裝置;在上述基板噴射上述化學液以處理上述基板的噴射配件;並包含上述化學液在上述化學液儲存裝置上移動至上述噴射配件之途徑上設置的化學液加熱裝置,上述化學液加熱裝置是上述化學液通過之路徑之流道;配置成為至少包圍上述流道的一部份之發熱體;並包含在上述發熱體照射光之光源,上述發熱體是由光子激發 (Photon Excitation) 發熱,並加熱上述化學液。In order to achieve the above object, an embodiment of the substrate processing system of the present invention is a chemical liquid device for storing a chemical liquid used when processing a substrate; a spray assembly for spraying the chemical liquid on the substrate to process the substrate; and includes the chemical liquid. A chemical liquid heating device is provided on the path from the chemical liquid storage device to the injection fitting. The chemical liquid heating device is a flow channel of the path through which the chemical liquid passes; and is configured to surround at least a part of the flow channel. A heating element; and including a light source that irradiates light on the heating element. The heating element generates heat by photon excitation and heats the chemical liquid.

其他實施例的具體事項則包含在詳細說明與圖面。Specific matters of other embodiments are included in the detailed description and drawings.

以下參照附加圖面,詳細說明本發明的理想實施例。本發明的優點及特徵,以及實現它們的方法,可參照以下附加圖面以及在後續說明的實施例,會更加明確。但本發明不會侷限在以下揭示的實施例,亦可透過各樣的型態來呈現,只是本實施例會更加完整告知本發明的內容,在本發明所屬的技術領域中,對於具備其通常知識者等於是提供其完整告知發明的範疇,本發明僅藉由請求項的範疇做出定義。整個說明書內的相同符號,是指稱同一組成要素。Preferred embodiments of the present invention are described in detail below with reference to the accompanying drawings. The advantages and features of the present invention, as well as the methods for realizing them, will be more clear with reference to the following additional drawings and the embodiments described subsequently. However, the present invention is not limited to the embodiments disclosed below, and can also be presented in various forms. However, this embodiment will more completely inform the content of the present invention. In the technical field to which the present invention belongs, those with common knowledge This is equivalent to providing a complete notice of the scope of the invention, which is defined solely by the scope of the claims. The same symbols throughout this specification refer to the same component.

指稱為元件 (elements) 或是不同層的元件或是指稱為層的「其上方 (on)」或是「在上方 (on)」者則不僅包含在其他元件或是層的正上方,亦或在其中間有其他層或是載有其他元件時的所有情形。相反的,元件指稱為「直接上方 (directly on)」或是 「正上方」者,就意味者在其中間沒有載有其他元件或是層。References to elements or components being on different layers or being referred to as "on" or "on" a layer do not only include being directly on top of other components or layers, but also being directly on top of other components or layers. All situations when there are other layers or other components in between. In contrast, a component that is "directly on" or "directly above" means that there are no other components or layers between it.

空間上的相對性字彙如「下 (below)」、「上 (beneath)」、「下部 (lower)」、「上 (above)」、「上部 (upper)」等如圖面所示,是為簡易記述一個元件或是一些組成要素與其他元件或是一些組成要素之間的相關關係。空間上的相對性字彙追加在圖面所示的方向使用時或是動作時,應將其理解為元件的相互不同方向亦包含在內之字彙。例如,將圖面所示之元件倒反時,有可能使原先位於其他元件的「下方 (below)」或是「下方 (beneath)」之元件,卻成為位於其他元件的「上 (above)」。因此,例示性字彙之「下方」,亦可包含下方與上方之意思。元件亦可背向成為其他方向,因此在空間上的相對性字彙,可依其背向情形來解釋。Relative words in space such as "below", "beneath", "lower", "above", "upper", etc. are shown in the figure. Briefly describe the correlation between one component or some components and other components or some components. When the spatially relative terms are used in the direction shown in the drawing or when used in motion, it should be understood that these terms also include the mutually different directions of the components. For example, when the components shown in the drawing are turned upside down, it is possible that components that were originally located "below" or "beneath" other components may become "above" other components. . Therefore, the illustrative word "below" can also include the meanings of below and above. Components can also be oriented in other directions, so spatially relative terms can be interpreted according to their oriented orientation.

雖然第1,第2等各樣元件是為敘述其組成要素以及/或部分Sections而使用,這些元件、組成要素以及/或是區段,不會因其字彙而受侷限。這些字彙只是將一個元件,組成要素或是區段與其他元件、組成要素或是部分做區別而使用。因此,在以下提起的第1元件、第1組成要素或是第1區段,在本發明的技術思維中,當然可視為第2元件、第2組成要素或是第2區段。Although the first and second elements are used to describe their components and/or sections, these components, components and/or sections will not be limited by their vocabulary. These words are used only to distinguish one component, component or section from other components, components or parts. Therefore, the first element, the first component or the first section mentioned below can of course be regarded as the second element, the second component or the second section in the technical thinking of the present invention.

本說明書中使用之字彙是為說明實施例,並不是要限制本發明。本說明書中的單數型亦可包含複數型,除非有特別的提起。The vocabulary used in this specification is for describing the embodiments and is not intended to limit the invention. The singular form in this specification may also include the plural form, unless otherwise mentioned.

說明書中使用之「包含」以及/或是「包含的」對於提起之組成要素、步驟、操作以及/或是元件,不排除其他一個以上的組成要素、步驟、操作以及/或是元件的存在或追加。The use of "comprises" and/or "includes" in the specification does not exclude the existence or existence of one or more other constituent elements, steps, operations and/or components for the mentioned components, steps, operations and/or components. Append.

若未做出其他定義則本說明書中使用之所有字彙 (包含技術及科學性字彙) 是在本發明所屬的技術領域中具有通常知識者,可共通理解之意義來使用。且一般在使用而於字典上有已定義者,則依照其原來意思,不會超出或做出過度的解釋,除非做出其他明確的定義。If no other definition is made, all words (including technical and scientific words) used in this specification are used with the meaning commonly understood by those with ordinary knowledge in the technical field to which the present invention belongs. And if it is generally used and has been defined in the dictionary, its original meaning will not be exceeded or over-interpreted unless other clear definitions are made.

以下藉由所附圖面對於本發明的實施例做出詳細說明,參照圖面作說明時,不管圖面符號如何,只要相同或對應的組成要素,則給予相同的參考編號,並省略對其做重複說明。The embodiments of the present invention will be described in detail below with reference to the accompanying drawings. When describing with reference to the drawings, regardless of the drawing symbols, as long as the same or corresponding constituent elements are the same, the same reference numbers will be given, and their identification will be omitted. Make repeated instructions.

本發明是利用光源為媒介的發熱體來加熱於化學液的化學液加熱裝置以及具備這些之基板處理系統。具體來說,本實施例中之化學液加熱裝置,亦可以利用光子激發 (Photon Excitation) 的方式之高純淨化學液加熱器來呈現。以下是參照圖面等,對本發明做詳細說明。The present invention is a chemical liquid heating device that uses a light source as a medium to heat a chemical liquid, and a substrate processing system equipped with the same. Specifically, the chemical liquid heating device in this embodiment can also be implemented using a high-purity chemical liquid heater using photon excitation. The present invention will be described in detail below with reference to drawings and the like.

圖1是依本發明的一實施例之基板處理系統的內部結構概略斷面圖。FIG. 1 is a schematic cross-sectional view of the internal structure of a substrate processing system according to an embodiment of the present invention.

基板處理系統 (100) 是以濕式洗淨 (Wet Cleaning) 基板。基板處理系統 (100) 是例如,可利用化學液洗淨基板。基板處理系統 (100) 是在半導體生產設備中,在製程室 (Process Chamber) 提供。The substrate processing system (100) uses wet cleaning (Wet Cleaning) substrates. The substrate processing system (100) is, for example, capable of cleaning the substrate using a chemical solution. The substrate processing system (100) is provided in a process chamber in a semiconductor manufacturing facility.

基板處理系統 (100) 是利用化學液來洗淨基板時像是包含杯 (110)、支撐用配件 (120)、起降單元 (130)、噴射配件 (140) 以及控制器 (150) 來組成。The substrate processing system (100) uses chemical liquid to clean the substrate and is composed of a cup (110), a supporting accessory (120), a lifting unit (130), a spray accessory (140) and a controller (150). .

杯 (110) 是提供基板 (W) 處理製程之進行空間。這樣的杯 (110) 是其上部為開放式。The cup (110) provides a space for the substrate (W) processing process. Such a cup (110) has an open upper part.

杯 (110) 可包含內部回收桶 (111)、中間回收桶 (112) 以及外部回收桶 (113) 組成。此時,各個回收桶 (111, 112, 113) 可將製程中使用之相互不同的處理液。The cup (110) may comprise an inner recycling bin (111), a middle recycling bin (112) and an outer recycling bin (113). At this time, each recovery barrel (111, 112, 113) can contain different treatment liquids used in the process.

內部回收桶 (111) 可用包住支撐用配件 (120) 的環狀型態形成。此時,內部回收桶 (111) 的內側空間 (114) 也會作為,使處理液流入內部回收桶 (111) 的流入口。The internal recycling bin (111) may be formed in a ring shape surrounding the supporting fitting (120). At this time, the inner space (114) of the internal recovery barrel (111) also serves as an inlet for the treatment liquid to flow into the internal recovery barrel (111).

中間回收桶 (112) 亦可作為包住內部回收桶 (111) 的環狀型態形成。此時,內部回收桶 (111) 和中間回收桶 (112) 之間的空間 (115) 可以作為,使處理液流入中間回收桶 (112) 的流入口。The middle recycling bin (112) may also be formed in a ring shape surrounding the inner recycling bin (111). At this time, the space (115) between the inner recovery barrel (111) and the intermediate recovery barrel (112) can be used as an inlet for the treatment liquid to flow into the intermediate recovery barrel (112).

外部回收桶 (113) 亦可作為包住中間回收桶 (112) 的環狀型態形成。此時,中間回收桶 (112) 和外部回收桶 (113) 之間的空間 (116) 亦可作為處理液流入外部回收桶 (113) 的流入口。The outer recycling bin (113) may also be formed in the form of a ring surrounding the middle recycling bin (112). At this time, the space (116) between the middle recovery barrel (112) and the outer recovery barrel (113) can also be used as an inlet for the treatment liquid to flow into the outer recovery barrel (113).

各個回收桶 (111, 112, 113) 可以各自連接垂直延長於其底面下方方向的回收管線 (117, 118, 119)。各自的回收管線 (117, 118, 119) 可透過各自的回收桶 (111, 112, 113),將流入的處理液,向外部排放。排放到外部的處理液,透過處理液再生系統 (未圖示) 來再利用。Each recovery barrel (111, 112, 113) can be connected to a recovery pipeline (117, 118, 119) extending vertically below its bottom surface. Respective recovery lines (117, 118, 119) can discharge the inflowing treatment liquid to the outside through respective recovery barrels (111, 112, 113). The treatment liquid discharged to the outside is reused through the treatment liquid regeneration system (not shown).

支撐用配件 (120) 是在進行製程中,支撐基板 (W) 使基板 (W) 迴轉。此支撐用配件 (120) 可配置在杯 (110) 的內部。The support accessory (120) supports the substrate (W) and allows the substrate (W) to rotate during the manufacturing process. This support fitting (120) can be arranged inside the cup (110).

支撐用配件 (120) 可包含機體 (121)、支撐銷 (Support Pin) (122)、導針 (Guide pin) (123) 以及第1支撐軸 (124) 組成。The support accessories (120) may include the body (121), the support pin (122), the guide pin (123) and the first support shaft (124).

機體 (121) 由上面看下去,多半具有圓形的上部面。此機體 (121) 的底面,有可透過馬達 (125) 迴轉的第1支撐軸 (124) 做固定的結合。一方面,機體 (121) 的上面,可設置後噴嘴(Back Nozzle) (未圖示)。The body (121), viewed from above, mostly has a circular upper surface. The bottom surface of the body (121) is fixedly coupled with the first support shaft (124) that can be rotated by the motor (125). On the one hand, a back nozzle (not shown) can be provided on the top of the body (121).

支撐銷 (Support Pin) (122) 是在機體 (121) 上支撐基板 (W) 的底面。此支撐銷 (Support Pin) (122) 可有複數個在機體 (121) 上。The Support Pin (122) is the bottom surface that supports the base plate (W) on the body (121). There can be multiple support pins (122) on the body (121).

複數個的支撐銷 (Support Pin) (122) 亦可在機體 (121) 的上部面,向左邊方向突出形成。並且,複數個的支撐銷 (Support Pin) (122) 在機體 (121) 的上部面的邊緣,以一定的間隔隔離配置。A plurality of support pins (122) may also be formed on the upper surface of the body (121), protruding toward the left. Furthermore, a plurality of support pins (122) are arranged at regular intervals on the edge of the upper surface of the body (121).

複數個的支撐銷 (Support Pin) (122) 就像是透過相互之間的組合,整體上可配置成為環狀的型態。複數個的支撐銷 (Support Pin) (122) 則透過這些組成,使基板 (W) 自機體 (121) 的上部面,離開一段距離而支撐基板 (W) 的後面邊緣。A plurality of support pins (122) can be arranged into a ring shape as a whole through combination with each other. Through these components, a plurality of support pins (122) move the base plate (W) away from the upper surface of the body (121) at a certain distance to support the rear edge of the base plate (W).

導針 (123) 亦稱為夾針 (Chuck Pin),支撐用配件 (120) 在迴轉時,為使基板 (W) 避免自正上方偏移到側邊,而做基板 (W) 側部的支撐。此導針 (123) 有如支撐銷 (Support Pin) (122),在機體 (121) 上可有複數個,在機體 (121) 的上部面,往上方以突出狀形成。The guide pin (123), also known as the Chuck Pin, is used to prevent the base plate (W) from shifting from directly above to the side when the supporting accessory (120) rotates. support. This guide pin (123) is like a support pin (122), there may be a plurality of them on the body (121), and they are formed in a protruding shape upward on the upper surface of the body (121).

導針 (123) 由機體 (121) 的中心處,比支撐銷 (Support Pin) (122) 更遠處配置。導針 (123) 依照機體 (121) 的半徑方向,在待機位置和支撐位置之間,以可直線移動方式提供。在此待機位置是意味著,比起支撐位置,自機體 (121) 的中心處更加遠離的位置。The guide pin (123) is disposed further from the center of the body (121) than the support pin (122). The guide pin (123) is provided in a linearly movable manner between the standby position and the support position according to the radial direction of the body (121). The standby position here means a position further away from the center of the body (121) than the support position.

導針 (123) 是基板 (W) 在裝上或卸下 (Loading/Unloading) 於支撐用配件 (120) 時,位於待機位置上,基板 (W) 在進行製程時,會位於支撐位置上。導針 (123) 在支撐位置上,可接觸於基板 (W) 的側部。The guide pin (123) is located in the standby position when the substrate (W) is loaded or unloaded (Loading/Unloading) on the supporting accessory (120). The substrate (W) will be located in the supporting position during the process. In the supporting position, the guide pin (123) can contact the side of the base plate (W).

起降單元 (130) 是將杯 (110),以上下方向直線移動。隨著杯 (110) 以上下方向直線移動,對於支撐用配件 (120) 的杯 (110) 之相對高度會有所變動。The lifting unit (130) moves the cup (110) in a straight line in the up and down direction. As the cup (110) moves straight up and down, the relative height of the cup (110) to the supporting fitting (120) will change.

起降單元 (130) 可包含托架(Bracket) (131)、移動軸 (132) 以及第1驅動器 (133) 來組成。The lifting unit (130) may include a bracket (131), a moving axis (132) and a first drive (133).

Bracket (131) 是設置固定在杯 (110) 的外牆。此 Bracket (131) 是透過第1驅動器 (133) 以上下方向移動的移動軸 (132) 結合。Bracket (131) is provided fixed to the outer wall of cup (110). This Bracket (131) is combined with a moving axis (132) that moves in the up and down direction via the first driver (133).

基板 (W) 放在支撐用配件 (120) 上,或由支撐用配件 (120) 抬起時,為使支撐用配件 (120) 由杯 (110) 的上部突出,可使杯 (110) 下降。並且進行製程時,依照供應到基板 (W) 的處理液種類,為使處理液流入至已設定之回收桶 (111, 112, 113),可調整將杯 (110) 的高度調整。When the base plate (W) is placed on the support fitting (120) or lifted up by the support fitting (120), the cup (110) can be lowered so that the support fitting (120) protrudes from the upper part of the cup (110). . And during the process, according to the type of processing liquid supplied to the substrate (W), the height of the cup (110) can be adjusted so that the processing liquid flows into the set recovery barrel (111, 112, 113).

例如,以第1處理液處理基板 (W) 時,基板 (W) 可位在對應於內部回收桶 (111) 內側的空間 (114) 之高度。並且,以第2處理液處理基板 (W) 的時間,基板 (W) 會位於對應在內部回收桶 (111) 和中間回收桶 (112) 之間的空間 (115) 高度。並且,以第3處理液處理基板 (W) 的時間,基板 (W) 會位於對應在中間回收桶 (112) 和外部回收桶 (113) 之間的空間 (116) 的高度。For example, when the substrate (W) is treated with the first treatment liquid, the substrate (W) can be located at a height corresponding to the space (114) inside the internal recovery barrel (111). Furthermore, when the substrate (W) is treated with the second treatment liquid, the substrate (W) will be located at a height corresponding to the space (115) between the inner recovery barrel (111) and the intermediate recovery barrel (112). Furthermore, when the substrate (W) is treated with the third treatment liquid, the substrate (W) will be located at a height corresponding to the space (116) between the middle recovery barrel (112) and the outer recovery barrel (113).

另外,起降單元 (130) 亦可取代杯 (110),以支撐用配件 (120) 上下方向移動。In addition, the lifting unit (130) can also replace the cup (110) to support the accessory (120) to move up and down.

噴射配件 (140) 是基板在處理製程時,向基板 (W) 供應處理液。噴射配件 (140) 為此可由包含噴嘴支撐台 (141)、噴嘴 (142)、第2支撐軸 (143) 以及第2驅動器 (144) 所組成。The spray accessory (140) supplies processing fluid to the substrate (W) during the substrate processing process. The spray accessory (140) may for this purpose consist of a nozzle support (141), a nozzle (142), a second support shaft (143) and a second driver (144).

噴射配件 (140) 可有一個或是複數個。噴射配件 (140) 以複數個提供時,可透過化學液、潤洗液、有機溶劑等相互不同之噴射配件 (140) 來提供。潤洗液可以是第1流體、有機溶劑,可以是異丙醇蒸氣和惰性氣體的混合物,也可以是異丙醇液體。There can be one or more spray accessories (140). When the spray parts (140) are provided in plural, they can be provided by different spray parts (140) such as chemical liquids, cleaning fluids, organic solvents, etc. The rinsing liquid may be the first fluid, an organic solvent, a mixture of isopropyl alcohol vapor and an inert gas, or isopropyl alcohol liquid.

噴嘴支撐台 (141) 的長度方向可以沿著第2方向 (20)。噴嘴支撐台 (141) 是垂直於第2支撐軸 (143) 的長度方向結合於第2支撐軸 (143) 的一端。第2驅動器 (144) 可結合於第2支撐軸 (143) 的另一端。The length direction of the nozzle support platform (141) may be along the second direction (20). The nozzle support base (141) is an end connected to the second support shaft (143) perpendicular to the length direction of the second support shaft (143). The second driver (144) can be coupled to the other end of the second support shaft (143).

噴嘴 (142) 可設置於噴嘴支撐台 (141) 的尾端底面。此噴嘴 (142) 可透過第2驅動器 (144) 移動至製程位置和待機位置。在此,製程位置是意味著,使噴嘴 (142) 可以向基板 (W) 上吐出處理液的支撐用配件 (120) 的垂直上方區,待機位置是意味著,支撐用配件 (120) 的垂直上方區以外的區,也就是由支撐用配件 (120) 的垂直上方區,向外側脫離之區。The nozzle (142) can be arranged on the bottom surface of the rear end of the nozzle support platform (141). This nozzle (142) can be moved to the process position and the standby position by the second drive (144). Here, the process position means the vertical upper area of the support fitting (120) that allows the nozzle (142) to discharge the processing liquid onto the substrate (W), and the standby position means the vertical area of the support fitting (120). The area other than the upper area is the area separated from the vertical upper area of the support fitting (120) to the outside.

第2支撐軸 (143) 之長度方向可以沿著第3方向 (30)。此第2支撐軸 (143) 在其下端,結合於第2驅動器 (144)。The length direction of the second support shaft (143) can be along the third direction (30). This second support shaft (143) is coupled to the second driver (144) at its lower end.

第2驅動器 (144) 可以迴轉及升降操作第2支撐軸 (143)。此第2驅動器 (144) 連接在控制器 (150) 而透過控制器 (150) 來控制。The second driver (144) can rotate and lift the second support shaft (143). This second driver (144) is connected to the controller (150) and is controlled by the controller (150).

另外在圖1顯示,控制器 (150) 連接於第2驅動器 (144)。但是本實施例不會將其限定於此。控制器 (150) 不僅可以在第2驅動器 (144) 亦可連接在第1驅動器 (133),以驅動第1驅動器 (133)。Also shown in Figure 1, the controller (150) is connected to the second driver (144). However, this embodiment is not limited to this. The controller (150) can be connected not only to the 2nd drive (144) but also to the 1st drive (133) to drive the 1st drive (133).

噴射配件 (140) 是為提供化學液於基板 (W) 上,連接在化學液儲存裝置 (210)。The spray accessory (140) is for providing chemical liquid on the base plate (W) and is connected to the chemical liquid storage device (210).

圖2是依本發明的一實施例,將組成基板處理系統之化學液儲存裝置、化學液加熱裝置以及噴射配件之間的連接關係圖示的圖面。以下說明則參照圖2。FIG. 2 is a diagram illustrating the connection relationship between a chemical liquid storage device, a chemical liquid heating device and a spray accessory constituting a substrate processing system according to an embodiment of the present invention. The following description refers to Figure 2.

化學液儲存裝置 (210) 是儲存洗淨基板 (W) 用化學液 (例如,IPA,有機溶媒等)。此化學液儲存裝置 (210) 為噴射配件 (140) 供應化學液,可透過一定長度排管連接於噴射配件 (140)。The chemical liquid storage device (210) stores chemical liquid (for example, IPA, organic solvent, etc.) for cleaning the substrate (W). The chemical liquid storage device (210) supplies chemical liquid to the spray fitting (140) and can be connected to the spray fitting (140) through a certain length of pipe.

化學液加熱裝置 (220) 加熱化學液用。化學液加熱裝置 (220) 可加熱由化學液儲存裝置 (210) 移動至噴射配件 (140) 之化學液。為此,化學液加熱裝置 (220) 可設在連接化學液儲存裝置 (210) 和噴射配件 (140) 的排管上。Chemical liquid heating device (220) is used to heat chemical liquid. The chemical liquid heating device (220) can heat the chemical liquid moved from the chemical liquid storage device (210) to the spray assembly (140). For this purpose, the chemical liquid heating device (220) can be provided on the drain pipe connecting the chemical liquid storage device (210) and the injection fitting (140).

化學液加熱裝置 (220) 可利用光子激發方式來加熱化學液。透過此,化學液加熱裝置 (220) 可呈現為高純淨化學液加熱器。在以下對於化學液加熱裝置 (220) 的結構,做出詳細說明。The chemical liquid heating device (220) can use photon excitation to heat the chemical liquid. Through this, the chemical liquid heating device (220) can be presented as a high-purity chemical liquid heater. The structure of the chemical liquid heating device (220) is described in detail below.

圖3是依本發明的一實施例的組成基板處理系統之化學液加熱裝置的內部結構圖示的斷面圖,圖4是依本發明的一實施例之組成基板處理系統的化學液加熱裝置的內部結構圖示的平面圖。3 is a cross-sectional view illustrating the internal structure of a chemical liquid heating device constituting a substrate processing system according to an embodiment of the present invention. FIG. 4 is a chemical liquid heating device constituting a substrate processing system according to an embodiment of the present invention. A floor plan illustration of the interior structure.

依據圖3以及圖4,化學液加熱裝置 (220) 的組成可包含光源 (310)、覆蓋配件 (320) 以及發熱體 (Heating Element) (330)。According to Figures 3 and 4, the chemical liquid heating device (220) may include a light source (310), a covering assembly (320), and a heating element (330).

光源 (310) 是為光的照射。此光源 (310) 配置在發熱體 (330) 的周邊,而可向發熱體 (330) 照射光。The light source (310) is for the illumination of light. This light source (310) is arranged around the heating element (330) and can irradiate the heating element (330) with light.

發熱體 (330) 可插入在覆蓋配件 (320) 的內部。光源 (310) 可斟酌此結構後,可配置成為包圍整個覆蓋配件 (320) 的外側。此時,光源 (310) 可配置成為,避免接觸於覆蓋配件 (320) 的外側。The heating element (330) can be inserted inside the covering fitting (320). The light source (310) can be configured to surround the entire outside of the covering accessory (320) taking into account this structure. At this time, the light source (310) can be configured to avoid contact with the outside of the covering fitting (320).

但是,本實施例並不將其限定。光源 (310) 有如圖5之圖示,配置成僅包住覆蓋配件 (320) 的部分外側,也是可行的。此時,光源 (310) 可考慮覆蓋配件 (320) 內之發熱體 (330) 的位置,可配置成為將覆蓋配件 (320) 的外側部分覆蓋。圖5是組成圖3以及圖4所圖示的化學液加熱裝置的光源之各樣配置結構說明用例示圖。However, this embodiment does not limit it. The light source (310) is as shown in Figure 5, and it is also feasible to configure it to only cover part of the outside of the covering accessory (320). At this time, the light source (310) can consider the position of the heating element (330) in the covering accessory (320), and can be configured to cover the outer part of the covering accessory (320). FIG. 5 is a diagram illustrating examples of various arrangements of light sources constituting the chemical liquid heating device shown in FIGS. 3 and 4 .

再以圖3以及圖4來做說明。Let's use Figure 3 and Figure 4 for explanation.

光源 (310) 為照射發熱體 (330),可利用LED光源或LD光源來呈現。本實施例中,光源 (310) 向發熱體 (330) 照射光後,可使發熱體 (330) 發熱的話,使用任何光源來呈現都無妨的。光源 (310) 像是UV光源或鹵素燈也是可行的。The light source (310) irradiates the heating element (330), which can be presented using an LED light source or an LD light source. In this embodiment, if the light source (310) can cause the heating element (330) to generate heat after irradiating light onto the heating element (330), any light source can be used for presentation. Light sources (310) such as UV light sources or halogen lamps are also possible.

覆蓋配件 (320) 是提供化學液 (Chemical Liquid;CL) 的移動路徑。覆蓋配件 (320) 為此,可具備貫通其內部之流道 (340)。The covering accessory (320) provides a moving path for chemical liquid (CL). For this purpose, the covering fitting (320) may be provided with a flow channel (340) extending through its interior.

覆蓋配件 (320) 可內藏,透過光源 (310) 發熱之發熱體 (330)。此時,發熱體 (330) 可內藏於覆蓋配件 (320),以包圍化學液 (CL) 移動之流道 (340)。The covering accessory (320) can contain a heating element (330) that generates heat through the light source (310). At this time, the heating element (330) can be built into the cover fitting (320) to surround the flow channel (340) where the chemical liquid (CL) moves.

覆蓋配件 (320) 可由透光素材製作,覆蓋配件 (320)像是以石英 (Quartz) 為素材來製作。以使光源 (310) 照射之光,可透到發熱體 (330) 內。覆蓋配件 (320) 可由像是石英 (Quartz) 為素材製造。Covering accessories (320) can be made of translucent materials, and covering accessories (320) are made of quartz (Quartz). So that the light irradiated by the light source (310) can penetrate into the heating element (330). Cover accessories (320) can be crafted from materials such as Quartz.

發熱體 (330) 是利用,由光源 (310) 照射的光來發熱。發熱體 (330) 是透過流道 (340) 在化學液 (CL) 移動時,透過發熱產生的熱能,傳遞至化學液 (CL)。The heating element (330) generates heat using light irradiated by the light source (310). The heating element (330) transmits heat energy generated through the flow channel (340) to the chemical liquid (CL) when the chemical liquid (CL) moves.

發熱體 (330) 有如上述,可內藏於覆蓋配件 (320)。此時,若透過發熱體 (330) 可提供流道 (340) 時, (例如,發熱體 (330) 圍繞 (包住) 流道 (340) 時),化學液加熱裝置 (220) 就不具備覆蓋配件 (320) 亦無妨。The heating element (330) is as mentioned above and can be built into the cover fitting (320). At this time, if the flow channel (340) can be provided through the heating element (330) (for example, when the heating element (330) surrounds (encloses) the flow channel (340)), the chemical liquid heating device (220) does not have It doesn't hurt to cover the accessory (320).

發熱體 (330) 從上側觀望時 (Top-View),以十字狀插入於覆蓋配件 (320) 的內部。但是並不限定於本實施例。發熱體 (330) 為傳遞熱能於化學液 (CL),若可設置於流道 (340) 附近處,以如何型態形成都無妨。發熱體 (330) 亦可像是,如,圖6所示,由上側觀看時,亦可由環狀插入於覆蓋配件 (320) 的內部。圖6是為說明 圖3以及圖4所示的組成化學液加熱裝置的發熱體的各樣現象相關第1例示圖。The heating element (330) is inserted into the cover fitting (320) in a cross shape when viewed from the top side (Top-View). However, it is not limited to this Example. In order to transfer heat energy to the chemical liquid (CL), the heating element (330) can be arranged in the vicinity of the flow channel (340), and it can be formed in any shape. The heating element (330) may also be, as shown in Figure 6, when viewed from the upper side, and may also be inserted into the inside of the covering fitting (320) in a ring shape. FIG. 6 is a first example diagram for explaining various phenomena of the heating element constituting the chemical liquid heating device shown in FIGS. 3 and 4 .

發熱體 (330) 可形成為,在覆蓋配件 (320) 內將流道 (340) 全部圍住。但是本實施例並不將其限定。發熱體 (330) 亦可。The heating element (330) may be formed to completely surround the flow channel (340) within the covering fitting (320). However, this embodiment does not limit it. Heating element (330) is also available.

有如圖7所示,在覆蓋配件 (320) 內圍住一部份的流道 (340)。此時,有可能在覆蓋配件 (320) 內,追加覆蓋流道 (340) 的剩餘部分之側壁配件 (350)。側壁配件 (350) 是以,不會與化學液 (CL) 反應之素材所形成。圖7是為說明圖3以及圖4所示之組成化學液加熱裝置之發熱體的各樣現象相關第2例示圖。As shown in Figure 7, a part of the flow channel (340) is enclosed in the covering fitting (320). At this time, it is possible to add a side wall fitting (350) that covers the remaining portion of the flow channel (340) to the covering fitting (320). The side wall fittings (350) are made of materials that do not react with chemical liquid (CL). FIG. 7 is a second illustration for explaining various phenomena of the heating element constituting the chemical liquid heating device shown in FIGS. 3 and 4 .

發熱體 (330) 是為由光源 (310) 照射之光來發熱,而由吸收光之物質作為素材來製作。並且,發熱體 (330) 可由,不會與化學液 (CL) 反應之物質作為素材來製作。如上所述,若發熱體 (330) 會吸收光,且與化學液 (CL) 不會反應之物質為素材製作時。就不會形成雜質 (Particle) 並有效達到加熱化學液 (CL) 之效果。The heating element (330) generates heat by the light irradiated by the light source (310), and is made of a material that absorbs light. Furthermore, the heating element (330) can be made of a material that does not react with the chemical liquid (CL). As mentioned above, if the heating element (330) is made of a material that absorbs light and does not react with the chemical liquid (CL). Impurities (Particles) will not be formed and the effect of heating chemical liquid (CL) can be effectively achieved.

發熱體 (330) 為得到上述效果亦可含入矽 (Si) 成分來製造。發熱體 (330) 則像是由單晶矽來製造,或包含碳化矽 (SiC;Silicon Carbide),二氧化矽 (SiO 2;Silicon Dioxide) 等的成分來製造。但本實施例不會將其限定。發熱體 (330) 亦可由包含氮化鋁 (AlN;Aluminium Nitride) 成分來製造。 In order to obtain the above-mentioned effects, the heating element (330) may also be manufactured by containing a silicon (Si) component. The heating element (330) may be made of single crystal silicon, or may include silicon carbide (SiC; Silicon Carbide), silicon dioxide (SiO 2 ; Silicon Dioxide), or other components. However, this embodiment will not limit it. The heating element (330) can also be made of a component containing aluminum nitride (AlN; Aluminum Nitride).

發熱體 (330) 是以矽成分為素材製作時,是由Si的光吸收率(Intensity) 產生熱能。本實施例中,發熱體 (330) 可在化學液通過流道 (340) 之前,預先使溫度上升。When the heating element (330) is made of silicon, it generates heat energy based on the light absorption rate (Intensity) of Si. In this embodiment, the heating element (330) can raise the temperature in advance before the chemical liquid passes through the flow channel (340).

一方面,發熱體 (330) 是由光源 (310) 照射的光來發熱,其本身可作為永久性加熱元件 (Permanent Heating Element) 來使用。On the one hand, the heating element (330) generates heat by the light irradiated by the light source (310), and itself can be used as a permanent heating element (Permanent Heating Element).

一方面,為確認發熱體 (330) 是否有升溫,而量測化學液 (CL) 溫度時,可在流道 (340) 的排放口 (Outlet) 連接溫度感應器,以量測化學液 (CL) 的溫度。On the one hand, in order to confirm whether the heating element (330) has heated up and measure the temperature of the chemical liquid (CL), a temperature sensor can be connected to the outlet (Outlet) of the flow channel (340) to measure the temperature of the chemical liquid (CL). ) temperature.

化學液加熱裝置 (220) 如上述說明,是依照光子激發方式,利用誘導光子 (Photon) 吸收的 (Absorption-Induced) 發熱體 (330),加熱於化學液 (CL) 的浸入 (Immersion) 方式來呈現的加熱器。化學液加熱裝置 (220) 有如上述結構,可從起初就阻斷雜質 (particle) 光源,可達到半導體生產效率之效果提高。並且,化學液加熱裝置 (220) 是藉由發光來加熱的方式,而不會產生潛熱 (latent heat),具有高度穩定性,熱傳導的損失也低,可達到信賴度高的加熱器。As described above, the chemical liquid heating device (220) is based on the photon excitation method and uses the Absorption-Induced heating element (330) to heat the chemical liquid (CL) by immersion. Heater presented. The chemical liquid heating device (220) has the above-mentioned structure and can block the impurity (particle) light source from the beginning, thereby achieving the effect of improving semiconductor production efficiency. Furthermore, the chemical liquid heating device (220) heats by emitting light without generating latent heat. It is highly stable and has low heat conduction loss, making it a highly reliable heater.

過去的化學液加熱裝置是利用電阻器來加熱化學液。這種的化學液加熱裝置為阻斷金屬雜質 (Metal Particle) 的產生,以鎳-鉻 (Ni-Cr) 合金為素材製造成的熱元件 (Heat Element) 上,塗層鐵氟龍成分 (Teflon-Coated Ni-Cr)。In the past, chemical liquid heating devices used resistors to heat chemical liquids. This kind of chemical liquid heating device blocks the generation of metal impurities (Metal Particles). The heat element (Heat Element) made of nickel-chromium (Ni-Cr) alloy is coated with Teflon. -Coated Ni-Cr).

但是過去的化學液加熱裝置塗層在熱元件 (Heat Element) 的鐵氟龍材質 (PTFE) 會在高溫下湧出雜質。並且PFA (管),PTFE,O-型環 (Viton + FEP) 等的接液部 (流體端) 分採用O型環而有可能產生雜質 (particle) 光源。因此過去的化學液加熱裝置是利用IPA,去離子(DI)水等的化學液來洗淨基板,這時由於雜質 (particle) 增加而良率下降。However, in the past, the Teflon material (PTFE) coating on the heat element of chemical liquid heating devices would emit impurities at high temperatures. In addition, PFA (tube), PTFE, O-ring (Viton + FEP), etc. use O-rings for the wetted parts (fluid end), which may generate impurity (particle) light sources. Therefore, in the past, chemical liquid heating devices used chemical liquids such as IPA and deionized (DI) water to clean the substrates. At this time, the yield rate decreased due to the increase in impurities (particles).

依照本實施例的化學液加熱裝置 (220) 有如圖3至圖7所做的說明,將LED光源,LD光源等照射於矽(Si)而經過光子激發 (Photon Absorption)產生熱能而使矽(Si)加熱。化學液加熱裝置 (220) 可採用不會與化學液 (例如,異丙醇(IPA) 起反應之單晶矽(Si)作為熱源,而在關閉LED時不會產生潛熱,可降低IPA 氣化或防爆風險。According to the chemical liquid heating device (220) of this embodiment, as explained in Figures 3 to 7, the LED light source, LD light source, etc. are irradiated on silicon (Si) to generate thermal energy through photon excitation (Photon Absorption) to cause the silicon (Si) to Si) heating. The chemical liquid heating device (220) can use monocrystalline silicon (Si) that does not react with chemical liquids (such as isopropyl alcohol (IPA)) as a heat source, and does not generate latent heat when the LED is turned off, which can reduce the vaporization of IPA. or explosion risk.

本實施例的化學液加熱裝置 (220) 是可由PFA(Polyfluoroalkoxy,中文:四氟乙烯)、覆蓋配件 (320) 像是石英 (Quartz)、發熱體 (330) 像矽(Si) 等來組成接液部 (流體端),而由此可以去除,在接液部 (流體端) 產生雜質 (partical) 光源的O型環,PTFE(Polytetrafluoroethylene中文:聚四氟乙烯)等。The chemical liquid heating device (220) in this embodiment can be composed of PFA (Polyfluoroalkoxy, Chinese: tetrafluoroethylene), a covering component (320) such as quartz (Quartz), a heating element (330) such as silicon (Si), etc. The liquid part (fluid end) can be removed, and the impurities (partial) produced in the liquid part (fluid end) are the O-ring of the light source, PTFE (Polytetrafluoroethylene in Chinese: polytetrafluoroethylene), etc.

另外,化學液加熱裝置 (220) 亦可用石英 (Quartz) 素材的化學浴 (Bath) 去除雜質 (particle) 光源,也同時達到維持光透率之效果。In addition, the chemical liquid heating device (220) can also use a chemical bath (Bath) made of quartz (Quartz) to remove impurities (particles) from the light source, while also achieving the effect of maintaining light transmittance.

圖8是組成本發明的一實施例之基板處理系統的化學液加熱Figure 8 is a diagram illustrating the chemical liquid heating components of the substrate processing system according to an embodiment of the present invention.

裝置的性能評估相關第1 試驗設置 (set up) 結構圖。 對於依本實施例的化學液加熱裝置 (220),為透過化學液升溫試驗,評估其妥當性與否,在玻璃基板 (Glass;410) 上配置矽晶圓 (Si Wafer;420),並利用LED陣列 (LED Array;430) 在其上部試著加熱發熱體 (420)。, Structural diagram of the first test setup (set up) related to device performance evaluation. For the chemical liquid heating device (220) according to this embodiment, in order to evaluate its adequacy through a chemical liquid temperature rising test, a silicon wafer (Si Wafer; 420) is placed on the glass substrate (Glass; 410), and using The LED array (LED Array; 430) attempts to heat the heating element (420) on its upper part. ,

玻璃基板 (410) 是採用厚度 (t) 為7mm之Ø300玻璃床 (Glass Bath),發熱體 (420) 則使用Ø200 矽晶圓 (Si Wafer)。並且光源 (430) 採用了Ø300的 LED Array 加熱器。The glass substrate (410) uses a Ø300 glass bath with a thickness (t) of 7mm, and the heating element (420) uses a Ø200 silicon wafer (Si Wafer). And the light source (430) uses a Ø300 LED Array heater.

其他試驗條件如下:Other test conditions are as follows:

- 發熱體 (420) 和光源 (430) 間的距離:30mm- Distance between heating element (420) and light source (430): 30mm

- 使用化學液:水 3L- Use chemical liquid: water 3L

- 加熱時間:5分 ~ 10分- Heating time: 5 minutes ~ 10 minutes

加熱時間經過後,我們在發熱體 (420) 的上部表面,測量了溫度。試驗結果,發熱體 (420) 的上部表面約在5分鐘後上升為50度,以表面為基準時,經過9分鐘後約上升到75度。以 IPA作為化學液來使用評鑑時,可預期發熱體 (420) 會更加快速升溫。After the heating time elapsed, we measured the temperature on the upper surface of the heating element (420). The test results show that the upper surface of the heating element (420) rises to 50 degrees after approximately 5 minutes, and based on the surface, rises to approximately 75 degrees after 9 minutes. When using IPA as a chemical liquid for evaluation, it can be expected that the heating element (420) will heat up more quickly.

圖9是依本發明的一實施例的組成基板處理系統之化學液加熱裝置性能的評鑑用第2試驗設置 (set up) 結構圖。9 is a structural diagram of a second test setup (set up) for evaluating the performance of a chemical liquid heating device constituting a substrate processing system according to an embodiment of the present invention.

依照在圖9標示的試驗設置 (set up) 結構,利用LED 加熱器,我們評估用Si時的升溫情形。According to the experimental setup (set up) structure marked in Figure 9, using the LED heater, we evaluate the temperature rise when using Si.

機體 (121) (像是在夾頭 (Chuck) ) 上配置了複數個的LED (520) 作為光源,在其上部作出覆蓋狀的石英圓窗 (Quartz Window;510) 以覆蓋複數個的LED (520)。以及利用支撐銷 (Support Pin) (122) 和導針 (123),使基板 (W) 位在其上部。A plurality of LEDs (520) are arranged on the body (121) (such as a Chuck) as a light source, and a covering-shaped quartz round window (Quartz Window; 510) is made on the upper part to cover the plurality of LEDs ( 520). And use the Support Pin (122) and Guide Pin (123) to position the base plate (W) on top of it.

依照圖9所示的試驗 設置 (set up) 結構利用熱顯像儀 (530),我們量測了基板 (W) 的表面溫度時,有如圖10所示經過升溫 (Rising Time) (640) 之後在基板 (W) 的各區 (1 點 (Point) (610)、2 點 (Point) (620)、3 點 (Point) (630) ) 可以確認到一定溫度的升溫。圖10是依照本發明的一實施例之組成基板處理系統而顯示化學液加熱裝置的性能之第1 試驗報告。從上述,1 點 (Point) (610) 意味著,基板 (W) 的中心區 (Center Zone) 上的點,2 點 (Point) (620) 意味著,基板 (W) 的中間區 (Middle Zone) 上的點 3 點 (Point) (630) 意味著,基板 (W) 的邊際區 (Edge Zone) 上的點。According to the test setup (set up) structure shown in Figure 9, using the thermal imager (530), when we measured the surface temperature of the substrate (W), after the Rising Time (640) as shown in Figure 10 A certain temperature rise can be confirmed in each area of the substrate (W) (Point 1 (610), Point 2 (620), Point 3 (630)). FIG. 10 is a first test report showing the performance of a chemical liquid heating device configured in a substrate processing system according to an embodiment of the present invention. From the above, point 1 (610) means the point on the center zone of the substrate (W), and point 2 (620) means the middle zone of the substrate (W). ) Point 3 Point (630) means a point on the edge zone of the substrate (W).

一方面,有如圖11所示圖,由上述的試驗可以發現到中心區到邊際之間有V字狀的Recipe可作控制。圖11是本發明一實施例的組成基板處理系統之化學液加熱裝置的性能的第2試驗報告。On the one hand, there is a picture as shown in Figure 11. From the above experiments, it can be found that there is a V-shaped recipe between the center area and the edge that can be controlled. FIG. 11 is a second test report on the performance of the chemical liquid heating device constituting the substrate processing system according to one embodiment of the present invention.

參照以上並附加圖面,作出本發明的實施例的說明,但在本發明所屬的技術領域中具有常見知識者,在本發明的技術思維或必備特徵沒有作變更下,以其他具體的型態來呈現是可行的。因此上述的實施例在所有層面只是作為範例並不將其限定。The embodiments of the present invention are described with reference to the above and attached drawings. However, those with common knowledge in the technical field to which the present invention belongs may adopt other specific forms without changing the technical thinking or essential features of the present invention. It is possible to present. Therefore, the above-mentioned embodiments are only examples in all aspects and are not limiting.

100:基板處理系統 110:杯 111:內部回收桶 112:中間回收桶 113:外部回收桶 120:支撐用配件 121:機體 122:支撐銷 123:導針 124:第1支撐軸 130:升降單元 140:噴射配件 150:控制器 210:化學液儲存裝置 220:化學液加熱裝置 310:光源 320:覆蓋配件 330:發熱體 340:流道 350:側壁配件 410:玻璃基板 510:LED 520:石英圓窗 530:熱顯像儀 W:基板 CL:化學液 100:Substrate processing system 110:Cup 111: Internal recycling bin 112: Intermediate recycling bin 113:External recycling bin 120: Support accessories 121: Body 122: Support pin 123: Guide pin 124: 1st support shaft 130:Lifting unit 140:Jet accessories 150:Controller 210:Chemical liquid storage device 220:Chemical liquid heating device 310:Light source 320: Cover accessories 330: Heating element 340:Flow channel 350: Side wall accessories 410:Glass substrate 510: LED 520: Quartz round window 530:Thermal imager W: substrate CL: chemical liquid

圖1是依本發明的實施例之基板處理系統的內部結構的概略圖示的斷面圖。FIG. 1 is a cross-sectional view schematically illustrating the internal structure of a substrate processing system according to an embodiment of the present invention.

圖2是依本發明的實施例之組成基板處理系統的化學液儲存裝置,化學液加熱裝置以及噴射配件之間的連結關係的圖示。FIG. 2 is a diagram illustrating the connection relationship between the chemical liquid storage device, the chemical liquid heating device and the spray assembly constituting the substrate processing system according to an embodiment of the present invention.

圖3是本發明的是依實施例之組成基板處理系統化學液加熱裝置的內部結構之斷面圖圖示。3 is a cross-sectional view illustrating the internal structure of a chemical liquid heating device constituting a substrate processing system according to an embodiment of the present invention.

圖4是本發明一實施例的組成基板處理系統之化學液加熱裝置的內部結構的平面圖圖示。4 is a plan view illustrating the internal structure of a chemical liquid heating device constituting a substrate processing system according to an embodiment of the present invention.

圖5是圖3及圖4所示的組成化學液加熱裝置的光源的各樣配置結構的說明例示圖。FIG. 5 is an explanatory diagram illustrating various arrangements of light sources constituting the chemical liquid heating device shown in FIGS. 3 and 4 .

圖6是圖3及圖4所示的組成化學液加熱裝置之發熱體的各樣現象之說明相關第一例示圖。FIG. 6 is a first example diagram for explaining various phenomena of the heating element constituting the chemical liquid heating device shown in FIGS. 3 and 4 .

圖7是圖3及圖4所示的組成化學液加熱裝置之發熱體的各樣形狀之說明相關第2例示圖。FIG. 7 is a second illustrative diagram illustrating various shapes of heating elements constituting the chemical liquid heating device shown in FIGS. 3 and 4 .

圖8是依本發明的一個實施例的組成基板處理系統之化學液加熱裝置的性能評估用第一試驗設置 (set up) 結構圖。8 is a structural diagram of a first test setup (set up) for performance evaluation of a chemical liquid heating device constituting a substrate processing system according to one embodiment of the present invention.

圖9是依本發明的一個實施例的組成基板處理系統之化學液加熱裝置的性能評估用第二試驗設置 (set up) 結構圖。FIG. 9 is a structural diagram of a second test setup (set up) for performance evaluation of the chemical liquid heating device constituting the substrate processing system according to one embodiment of the present invention.

圖10是依本發明的一實施例的組成基板處理系統之化學液加熱裝置的性能結果之第1試驗報告。FIG. 10 is a first test report showing performance results of a chemical liquid heating device constituting a substrate processing system according to an embodiment of the present invention.

圖11是依本發明的一實施例的組成基板處理系統之化學液加熱裝置的性能結果之第2試驗報告。FIG. 11 is a second test report showing performance results of a chemical liquid heating device constituting a substrate processing system according to an embodiment of the present invention.

220:化學液加熱裝置 220:Chemical liquid heating device

310:光源 310:Light source

320:覆蓋配件 320: Cover accessories

330:發熱體 330: Heating element

340:流道 340:Flow channel

Claims (20)

一種化學液加熱裝置,包含: 一流道,提供處理基板時利用的一化學液流過的路徑; 一發熱體,包圍上述流道的至少一部分;以及 一光源,在上述發熱體照射光, 其中,上述發熱體是利用光子激發來發熱,以加熱於上述化學液。 A chemical liquid heating device including: A channel provides a path for a chemical liquid used when processing the substrate to flow; a heating element surrounding at least a part of the above-mentioned flow channel; and A light source irradiates light on the above-mentioned heating element, Wherein, the above-mentioned heating element generates heat by photon excitation to heat the above-mentioned chemical liquid. 根據請求項1所述的化學液加熱裝置,其中, 更包含覆蓋上述發熱體之一覆蓋配件。 The chemical liquid heating device according to claim 1, wherein, It also includes a covering accessory that covers one of the above heating elements. 根據請求項2所述的化學液加熱裝置,其中, 上述覆蓋配件可使上述光通過。 The chemical liquid heating device according to claim 2, wherein, The above-mentioned covering fitting allows the above-mentioned light to pass through. 根據請求項3所述的化學液加熱裝置,其中, 上述覆蓋配件係石英製成的。 The chemical liquid heating device according to claim 3, wherein, The above-mentioned covering accessories are made of quartz. 根據請求項1所述的化學液加熱裝置,其中, 上述發熱體是在上述化學液通過上述流道之前,預先將溫度達到規定溫度。 The chemical liquid heating device according to claim 1, wherein, The temperature of the heating element is set to a predetermined temperature in advance before the chemical liquid passes through the flow channel. 根據請求項1所述的化學液加熱裝置,其中, 上述發熱體是與上述化學液不會反應的物質作為素材來製作。 The chemical liquid heating device according to claim 1, wherein, The heating element is made of a material that does not react with the chemical liquid. 根據請求項6所述的化學液加熱裝置,其中, 上述發熱體是以單晶矽所製作。 The chemical liquid heating device according to claim 6, wherein, The above-mentioned heating element is made of single crystal silicon. 根據請求項6所述的化學液加熱裝置,其中, 上述發熱體在矽 (Si)、碳化矽 (SiC)、二氧化矽 (SiO 2) 以及氮化鋁 (AlN) 中至少包含其一的成分來製造。 The chemical liquid heating device according to claim 6, wherein the heating element contains at least one component of silicon (Si), silicon carbide (SiC), silicon dioxide (SiO 2 ), and aluminum nitride (AlN). to manufacture. 根據請求項1所述的化學液加熱裝置,其中, 上述發熱體在寬度方向是具有以十字形態或環狀型態之其中一個型態。 The chemical liquid heating device according to claim 1, wherein, The above-mentioned heating element has one of a cross shape or an annular shape in the width direction. 根據請求項1所述的化學液加熱裝置,更包含 一溫度感應器,連結在上述流道的排放口,以測量上述化學液的溫度,且上述化學液加熱裝置以上述化學液的一量測溫度為基礎,確認上述發熱體是否升溫。 The chemical liquid heating device according to claim 1, further comprising A temperature sensor is connected to the discharge port of the flow channel to measure the temperature of the chemical liquid, and the chemical liquid heating device confirms whether the heating element has heated up based on a measured temperature of the chemical liquid. 根據請求項1所述的化學液加熱裝置,其中, 上述光源為發光二極體光源以及雷射二極體光源中,至少包含其中一個的光源。 The chemical liquid heating device according to claim 1, wherein, The above-mentioned light source is a light source including at least one of a light-emitting diode light source and a laser diode light source. 根據請求項1所述的化學液加熱裝置,其中, 上述發熱體配置成為圍繞上述流道的一部份時,會另包含將上述剩餘部分圍繞之側壁配件。 The chemical liquid heating device according to claim 1, wherein, When the above-mentioned heating element is arranged to surround a part of the above-mentioned flow channel, a side wall fitting is further included to surround the above-mentioned remaining part. 根據請求項12所述的化學液加熱裝置,其中, 上述側壁配件是與上述化學液不會起反應之物質為素材來製作。 The chemical liquid heating device according to claim 12, wherein, The above-mentioned side wall fittings are made of materials that do not react with the above-mentioned chemical liquid. 一種化學液加熱裝置,包含: 一流道,供處理基板用化學液通過的途經; 一發熱體,該發熱體配置成為至少包圍上述流道的一部份; 一光源,在上述發熱體上照射光;以及 一覆蓋配件,覆蓋上述發熱體,且使上述光透過, 其中,上述發熱體是利用光子激發來發熱,以加熱於上述化學液。 A chemical liquid heating device including: A channel, a path for the chemical liquid used to process the substrate to pass; A heating element configured to surround at least a portion of the flow channel; A light source that irradiates light on the above-mentioned heating element; and A covering accessory that covers the above-mentioned heating element and allows the above-mentioned light to pass through, Wherein, the above-mentioned heating element generates heat by photon excitation to heat the above-mentioned chemical liquid. 一種基板處理系統,包含: 一化學液儲存裝置,儲存處理基板用一化學液; 一噴射配件,在上述基板噴射上述化學液以處理上述基板;以及 一化學液加熱裝置,將上述化學液由上述化學液儲存裝置移動至上述噴射配件, 其中,上述化學液加熱裝置, 供上述化學液通過之途徑的流道; 配置成為至少包圍上述流道的一部分之發熱體;以及 並包含在上述發熱體照射光的光源, 上述發熱體是利用光子激發來發熱,以加熱上述化學液。 A substrate processing system including: A chemical liquid storage device for storing a chemical liquid for processing the substrate; A spray accessory for spraying the chemical liquid on the substrate to process the substrate; and A chemical liquid heating device moves the chemical liquid from the chemical liquid storage device to the spray accessory, Wherein, the above-mentioned chemical liquid heating device, The flow channel for the passage of the above-mentioned chemical liquid; A heating element configured to surround at least a part of the flow channel; and and includes a light source that irradiates light on the above-mentioned heating element, The above-mentioned heating element uses photon excitation to generate heat to heat the above-mentioned chemical liquid. 根據請求項15所述的基板處理系統,其中,上述化學液加熱裝置更包含一覆蓋配件,上述覆蓋配件覆蓋上述發熱體,使上述光透過。The substrate processing system according to claim 15, wherein the chemical liquid heating device further includes a covering fitting, and the covering fitting covers the heating element to allow the light to pass through. 根據請求項15所述的基板處理系統,其中, 上述發熱體是在上述化學液通過上述流道之前,升溫至事先設定之溫度。 The substrate processing system according to claim 15, wherein, The heating element is heated to a preset temperature before the chemical liquid passes through the flow channel. 根據請求項15所述的基板處理系統,其中, 上述發熱體是與上述化學液不會反應之物質作為素材來製作。 The substrate processing system according to claim 15, wherein, The heating element is made of a material that does not react with the chemical liquid. 根據請求項15所述的基板處理系統,其中, 上述發熱體是在寬度方向具有十字形態或是環狀型態之其中一個型態。 The substrate processing system according to claim 15, wherein, The above-mentioned heating element has one of a cross shape or an annular shape in the width direction. 根據請求項15所述的基板處理系統,其中, 上述化學液加熱裝置,更包含: 一溫度感應器,連接在上述流道的排放口以量測上述化學液的溫度, 上述化學液加熱裝置以上述化學液的量測溫度為基礎,確認上述發熱體的升溫與否。 The substrate processing system according to claim 15, wherein, The above-mentioned chemical liquid heating device also includes: A temperature sensor is connected to the discharge port of the above-mentioned flow channel to measure the temperature of the above-mentioned chemical liquid, The above-mentioned chemical liquid heating device confirms whether the temperature of the above-mentioned heating element is raised based on the measured temperature of the above-mentioned chemical liquid.
TW111110161A 2022-03-18 2022-03-18 Apparatus for heating chemical liquid and system for treating substrate with the apparatus TW202339044A (en)

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