TW202336928A - Preformed conductive pillar structure and method of manufacturing the same - Google Patents
Preformed conductive pillar structure and method of manufacturing the same Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims description 245
- 229910052751 metal Inorganic materials 0.000 claims description 245
- 230000002093 peripheral effect Effects 0.000 claims description 37
- 238000005530 etching Methods 0.000 claims description 10
- 230000000994 depressogenic effect Effects 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- YTAHJIFKAKIKAV-XNMGPUDCSA-N [(1R)-3-morpholin-4-yl-1-phenylpropyl] N-[(3S)-2-oxo-5-phenyl-1,3-dihydro-1,4-benzodiazepin-3-yl]carbamate Chemical compound O=C1[C@H](N=C(C2=C(N1)C=CC=C2)C1=CC=CC=C1)NC(O[C@H](CCN1CCOCC1)C1=CC=CC=C1)=O YTAHJIFKAKIKAV-XNMGPUDCSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 10
- 238000012858 packaging process Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
本發明是有關於一種半導體封裝結構及其製作方法,且特別是有關於一種預成型導電柱結構及其製作方法。The present invention relates to a semiconductor packaging structure and a manufacturing method thereof, and in particular to a preformed conductive pillar structure and a manufacturing method thereof.
如圖1所示,先提供導電架a1,導電架a1具有板體a2及形成在板體a2上的複數導電柱a3;再提供晶片b1,晶片b1具有複數電極部b2,將晶片b1置放在導電架a1上方,並將複數電極部b2焊接於複數導電柱a3上方;最後提供封裝體c,將封裝體c包覆在晶片b1及複數導電柱a3的外部,再將裸露出封裝體c的板體a2移除,即完成一種常見的單晶封裝製程。As shown in Figure 1, a conductive frame a1 is provided first. The conductive frame a1 has a plate body a2 and a plurality of conductive pillars a3 formed on the plate body a2. Then a wafer b1 is provided. The wafer b1 has a plurality of electrode portions b2. Place the wafer b1 Above the conductive frame a1, the plurality of electrode parts b2 are welded on the plurality of conductive pillars a3; finally, a package c is provided, and the package c is wrapped around the chip b1 and the plurality of conductive pillars a3, and then the package c is exposed By removing the board a2, a common single crystal packaging process is completed.
然而,上述單晶封裝製程具有以下缺點,其一、需移除板體a2後才可檢測晶片b1,所以晶片b1發生接鏈不良時,因晶片b1已被封裝體c包覆而有回收重製困難之問題;其二、在焊接過程中,錫球容易自導電柱a3的頂部滾落,造成焊接不便;其三、單晶封裝製程後段需要移除板體a2,導致製程步驟繁瑣複雜。However, the above-mentioned single crystal packaging process has the following shortcomings. First, the chip b1 needs to be removed before the board a2 can be detected. Therefore, when the chip b1 has a poor connection, it will be recycled because the chip b1 has been covered by the package c. Secondly, during the welding process, the solder ball easily rolls off the top of the conductive pillar a3, causing welding inconvenience; thirdly, the board a2 needs to be removed in the later stage of the single crystal packaging process, making the process steps cumbersome and complicated.
有鑑於此,本發明人遂針對上述現有技術,特潛心研究並配合學理的運用,盡力解決上述之問題點,即成為本發明人開發之目標。In view of this, the inventor has devoted himself to research on the above-mentioned existing technology and cooperated with the application of academic theory to try his best to solve the above-mentioned problems, which has become the development goal of the inventor.
本發明提供一種預成型導電柱結構及其製作方法,其係利用預成型導電柱結構已對導電柱封裝,又導電柱兩端裸露於封裝體,以達到單晶封裝製程後段具有製程步驟簡單、縮短及提高成品良率之優點。The present invention provides a preformed conductive pillar structure and a manufacturing method thereof. The preformed conductive pillar structure is used to encapsulate the conductive pillars, and both ends of the conductive pillars are exposed to the package body, so as to achieve the simple process steps in the latter part of the single crystal packaging process. The advantages of shortening and improving the yield of finished products.
於本發明實施例中,本發明係提供一種預成型導電柱結構,包括:複數導電柱,彼此直立設置且間隔並列;以及一封裝體,包覆在該複數導電柱的外部,該封裝體具有一頂面及一底面,每一該導電柱的一端裸露於該頂面及另一端裸露於該底面。In an embodiment of the present invention, the present invention provides a preformed conductive pillar structure, including: a plurality of conductive pillars, which are arranged upright and spaced apart from each other; and a package body covering the outside of the plurality of conductive pillars, the package body having A top surface and a bottom surface, one end of each conductive pillar is exposed on the top surface and the other end is exposed on the bottom surface.
於本發明實施例中,本發明係提供一種預成型導電柱結構的製作方法,其步驟包括:a)提供一金屬板體,對該金屬板體進行蝕刻處理,以令該金屬板體在一面形成有一被蝕刻面及留存於該被蝕刻面上的複數金屬柱;以及b)對該金屬板體進行封裝處理,以令一封裝體結合於該金屬板體上,該封裝體包覆該被蝕刻面與該複數金屬柱的外周面,每一該金屬柱在一端具有裸露且齊平於該封裝體的頂面的一端面。In an embodiment of the present invention, the present invention provides a method for manufacturing a preformed conductive pillar structure. The steps include: a) providing a metal plate body and etching the metal plate body so that the metal plate body is Forming an etched surface and a plurality of metal pillars remaining on the etched surface; and b) encapsulating the metal plate body so that a package body is combined with the metal plate body, and the package body covers the metal plate body The etched surface and the outer peripheral surface of the plurality of metal pillars, each metal pillar has an end surface exposed at one end and flush with the top surface of the package.
於本發明實施例中,本發明係提供一種預成型導電柱結構的製作方法,其步驟包括:e)提供一第一金屬板體,對該第一金屬板體進行蝕刻處理,以令該第一金屬板體在一面形成有一第一被蝕刻面及留存於該第一被蝕刻面上的複數第一金屬柱;f)提供一第二金屬板體,對該第二金屬板體進行蝕刻處理,以令該第二金屬板體在一面形成有一第二被蝕刻面及留存於該第二被蝕刻面上的複數第二金屬柱;g)將該複數第一金屬柱與該複數第二金屬柱上、下相疊,並使各該第一金屬柱的一端與各該第二金屬柱的一端焊接;以及h)對該第一金屬板體與該第二金屬板體進行封裝處理,以令一封裝體結合於該第一金屬板體與該第二金屬板體之間,該封裝體包覆該第一被蝕刻面、該第二被蝕刻面、該複數第一金屬柱的外周面與該複數第二金屬柱的外周面。In an embodiment of the present invention, the present invention provides a method for manufacturing a preformed conductive pillar structure. The steps include: e) providing a first metal plate body and etching the first metal plate body so that the first metal plate body is etched. A metal plate body is formed with a first etched surface and a plurality of first metal pillars remaining on the first etched surface on one side; f) providing a second metal plate body and etching the second metal plate body , so that the second metal plate body forms a second etched surface on one side and a plurality of second metal pillars remaining on the second etched surface; g) combine the plurality of first metal pillars and the plurality of second metal pillars The pillars are stacked up and down, and one end of each first metal pillar is welded to one end of each second metal pillar; and h) encapsulating the first metal plate body and the second metal plate body to Let a package body be combined between the first metal plate body and the second metal plate body. The package body covers the first etched surface, the second etched surface, and the outer peripheral surface of the plurality of first metal pillars. and the outer peripheral surface of the plurality of second metal pillars.
基於上述,本發明預成型導電柱結構已去除金屬板體及對導電柱封裝,又導電柱兩端裸露於封裝體,使預成型導電柱結構出貨至客戶端進行單晶封裝製程後段時,客戶端無須去除金屬板體,僅對導電柱刷錫即可直接與晶片焊接,以達到單晶封裝製程後段具有製程步驟簡單、縮短之優點。Based on the above, the preformed conductive pillar structure of the present invention has the metal plate removed and the conductive pillar encapsulated, and both ends of the conductive pillar are exposed to the package body, so that the preformed conductive pillar structure can be shipped to the client for the later stage of the single crystal packaging process. The client does not need to remove the metal plate. It only brushes tin on the conductive pillars and can be directly welded to the chip, thereby achieving the advantages of simple and shortened process steps in the latter part of the single crystal packaging process.
基於上述,本發明預成型導電柱結構已去除金屬板體,所以可省略習知封裝體先對晶片與板體封裝,再移除板體之步驟,使得晶片無須被封裝即可直接與導電柱焊接,後續檢測晶片且發生晶片接鏈不良時,因晶片未被封裝而可回收重製,進而提高單晶封裝製程之成品良率。Based on the above, the preformed conductive pillar structure of the present invention has removed the metal plate, so the conventional package can omit the steps of first packaging the chip and the plate and then removing the plate, so that the chip can be directly connected to the conductive pillar without being packaged. During welding and subsequent inspection of the wafer, if a defective chip connection occurs, the wafer can be recycled and remanufactured since it has not been encapsulated, thus improving the yield rate of the single crystal packaging process.
有關本發明之詳細說明及技術內容,將配合圖式說明如下,然而所附圖式僅作為說明用途,並非用於侷限本發明。The detailed description and technical content of the present invention will be described below with reference to the drawings. However, the attached drawings are only for illustrative purposes and are not intended to limit the present invention.
請參考圖2至圖8所示,本發明係提供一種預成型導電柱結構第一實施例及其製作方法,此預成型導電柱結構10主要包括複數導電柱1及一封裝體2。Referring to FIGS. 2 to 8 , the present invention provides a first embodiment of a preformed conductive pillar structure and a manufacturing method thereof. The preformed
如圖2所示,係本發明預成型導電柱結構第一實施例的製作方法之步驟,進一步說明如下;第一、如圖2之步驟a、圖3至圖4所示,提供一金屬板體11,對金屬板體11進行蝕刻處理,以令金屬板體11在一面形成有一被蝕刻面111及留存於被蝕刻面111上的複數金屬柱112。其中,金屬板體11可由銅、銀、金等電導率金屬所構成,使得金屬柱112可由銅、銀、金等電導率金屬所構成。As shown in Figure 2, the steps of the manufacturing method of the first embodiment of the preformed conductive pillar structure of the present invention are further described as follows; First, as shown in step a of Figure 2 and Figures 3 to 4, a metal plate is provided The
第二、如圖2之步驟b、圖5至圖6所示,對金屬板體11進行封裝處理,以令一封裝體2結合於金屬板體11上,封裝體2包覆被蝕刻面111與複數金屬柱112的外周面113,每一金屬柱112在一端具有裸露且齊平於封裝體2的頂面21的一端面14。Second, as shown in step b of Figure 2 and Figures 5 to 6, the
另外,封裝體2之材質為聚醯亞胺(Polyimide,PI)、乾膜(Dry film)、環氧樹脂(Expoxy)或封裝材(Molding Compound),封裝體2可用壓合(Lamination)或模壓(Molding)之方式形成於金屬板體11上,但不以上述為限制。In addition, the material of the
再者,對金屬板體11進行封裝處理之前,可先對被蝕刻面111與複數金屬柱112的外周面113進行表面粗化處理,使被蝕刻面111與複數金屬柱112的外周面113表面粗糙而易於與封裝體2穩定結合,但此步驟非必要步驟,其可視實際情況保留或省略。Furthermore, before encapsulating the
第三、如圖2之步驟c、圖7至圖8所示,對金屬板體11進行去除處理,以令每一金屬柱112在另一端具有裸露且齊平於封裝體2的底面22的一端面14。藉此,製作出預成型導電柱結構10之第一實施例。Third, as shown in step c of Figure 2 and Figures 7 to 8, the
其中,本實施例之每一端面14為一平面,但不以此為限制,每一端面14也可受蝕刻而形成由外周緣至中心點逐漸凹陷的一凹弧面。Each
如圖7至圖8所示,係本發明預成型導電柱結構10之第一實施例,詳細說明如下,複數導電柱1彼此直立設置且間隔並列;封裝體2包覆在複數導電柱1的外部,封裝體2具有一頂面21及一底面22,每一導電柱1的一端裸露且齊平於頂面21及另一端裸露且齊平於底面22。As shown in Figures 7 to 8, it is the first embodiment of the preformed
另外,封裝體2設有複數貫穿孔23,每一導電柱1包含嵌固於各貫穿孔23的金屬柱112,每一金屬柱112在兩端具有裸露且齊平於頂面21與底面22的二端面14,因金屬柱112被蝕刻成型,所以每一金屬柱112自兩端朝中間逐漸縮減外周緣尺寸。In addition, the
如圖7至圖8所示,本發明預成型導電柱結構10第一實施例之使用狀態,其係利用封裝體2包覆在複數導電柱1的外部,每一導電柱1的一端裸露且齊平於封裝體2的頂面21及另一端裸露且齊平於封裝體2的底面22。藉此,本發明預成型導電柱結構10已去除金屬板體11及對導電柱1封裝,又導電柱1兩端裸露於封裝體2,使預成型導電柱結構10出貨至客戶端進行單晶封裝製程後段時,客戶端無須去除金屬板體11,僅對導電柱1刷錫即可直接與晶片焊接,以達到單晶封裝製程後段具有製程步驟簡單、縮短之優點。As shown in FIGS. 7 to 8 , in the usage state of the first embodiment of the preformed
另外,本發明預成型導電柱結構10已去除金屬板體11,所以可省略習知封裝體先對晶片與板體封裝,再移除板體之步驟,使得晶片無須被封裝即可直接與導電柱1焊接,後續檢測晶片且發生晶片接鏈不良時,因晶片未被封裝而可回收重製,進而提高單晶封裝製程之成品良率。In addition, the preformed
又,在焊接過程中,本實施例之導電柱1的一端裸露且齊平於封裝體2的頂面21及另一端裸露且齊平於封裝體2的底面22,所以錫球不易自導電柱1的末端滾落,以達到預成型導電柱結構10具有方便焊接之功效。In addition, during the welding process, one end of the
請參考圖3至圖6、圖9至圖11所示,係本發明預成型導電柱結構第二實施例及其製作方法,進一步說明如下。Please refer to FIGS. 3 to 6 and 9 to 11 , which illustrate a second embodiment of the preformed conductive pillar structure and its manufacturing method according to the present invention. Further description is as follows.
本發明預成型導電柱結構第二實施例的製作方法之步驟a至b,與預成型導電柱結構第一實施例之步驟a至b相同,預成型導電柱結構第一、二實施例的製作方法不同之處在於步驟b之後的步驟不同。The steps a to b of the manufacturing method of the second embodiment of the preformed conductive pillar structure of the present invention are the same as the steps a to b of the first embodiment of the preformed conductive pillar structure. The manufacturing method of the first and second embodiments of the preformed conductive pillar structure The method differs in the steps after step b.
先經過圖9之步驟a(如圖3至圖4所示)、步驟b(如圖5至圖6所示)之後,再如圖9之步驟d、圖10至圖11所示,對金屬板體11進行蝕刻處理,以令每一金屬柱112在另一端延伸有裸露且突出於封裝體2的底面22的一延伸柱15。藉此,製作出預成型導電柱結構10之第二實施例。After first going through steps a (shown in Figures 3 to 4) and b (shown in Figures 5 and 6) in Figure 9, and then step d and 10 and 11 in Figure 9, the metal The
其中,本實施例之每一延伸柱15的末端面為一平面,但不以此為限制,每一延伸柱15的末端面也可受蝕刻而形成由外周緣至中心點逐漸凹陷的一凹弧面。In this embodiment, the end surface of each
如圖10至圖11所示,係本發明預成型導電柱結構10之第二實施例,詳細說明如下,封裝體2包覆在複數導電柱1的外部,封裝體2具有頂面21及底面22,每一導電柱1的一端裸露且齊平於頂面21及另一端裸露且突出於底面22。As shown in Figures 10 and 11, it is the second embodiment of the preformed
另外,封裝體2設有複數貫穿孔23,每一導電柱1包含嵌固於各貫穿孔23的金屬柱112,每一金屬柱112在一端具有裸露且齊平於頂面21的一端面14及在另一端延伸有裸露且突出於底面22的一延伸柱15,因金屬柱112先被蝕刻成型,延伸柱15再被蝕刻成型,所以每一金屬柱112自兩端朝中間逐漸縮減外周緣尺寸,每一延伸柱15自兩端朝中間逐漸縮減外周緣尺寸。藉此,以達到相同於預成型導電柱結構10第一實施例及其製作方法之功效。In addition, the
再者,本實施例利用蝕刻金屬板體11而在金屬柱112一端延伸有延伸柱15,進而增加導電柱1的長度,使預成型導電柱結構10具有可延長導電柱1長度之功能。Furthermore, in this embodiment, the
請參考圖12至圖17所示,本發明係提供一種預成型導電柱結構第三實施例及其製作方法,此預成型導電柱結構10主要包括複數導電柱1及封裝體2。Referring to FIGS. 12 to 17 , the present invention provides a third embodiment of a preformed conductive pillar structure and a manufacturing method thereof. The preformed
如圖12所示,係本發明預成型導電柱結構第三實施例的製作方法之步驟,進一步說明如下;第一、如圖12之步驟e、圖13所示,提供一第一金屬板體12,對第一金屬板體12進行蝕刻處理,以令第一金屬板體12在一面形成有一第一被蝕刻面121及留存於第一被蝕刻面121上的複數第一金屬柱122。As shown in Figure 12, the steps of the manufacturing method of the third embodiment of the preformed conductive pillar structure of the present invention are further described as follows; First, as shown in step e of Figure 12 and Figure 13, a first metal plate body is provided 12. Perform an etching process on the first
第二、如圖12之步驟f、圖14至圖15所示,提供一第二金屬板體13,對第二金屬板體13進行蝕刻處理,以令第二金屬板體13在一面形成有一第二被蝕刻面131及留存於第二被蝕刻面131上的複數第二金屬柱132。Second, as shown in step f of Figure 12 and Figures 14 and 15, a second
第三、如圖12之步驟g、圖14至圖15所示,將複數第一金屬柱122與複數第二金屬柱132上、下相疊,並使各第一金屬柱122的一端與各第二金屬柱132的一端焊接。Third, as shown in step g of Figure 12 and Figures 14 and 15, the plurality of
步驟g詳細說明如下,先在複數第二金屬柱132的末端刷錫,再將複數第一金屬柱122與複數第二金屬柱132上、下相疊,並提高環境溫度,使各第一金屬柱122的一端與各第二金屬柱132的一端透過錫加熱熔化後焊接。Step g is described in detail as follows. First, brush tin on the ends of the plurality of
第四、如圖12之步驟h、圖16所示,對第一金屬板體12與第二金屬板體13進行封裝處理,以令一封裝體2結合於第一金屬板體12與第二金屬板體13之間,封裝體2包覆第一被蝕刻面121、第二被蝕刻面131、複數第一金屬柱122的外周面123與複數第二金屬柱132的外周面133。Fourth, as shown in step h of Figure 12 and Figure 16, the first
另外,封裝體2之材質為聚醯亞胺(Polyimide,PI)、乾膜(Dry film)、環氧樹脂(Expoxy)或封裝材(Molding Compound),封裝體2可用壓合(Lamination)或模壓(Molding)之方式形成於第一金屬板體12與第二金屬板體13之間,但不以上述為限制。In addition, the material of the
再者,對第一金屬板體12與第二金屬板體13進行封裝處理之前,可先對第一被蝕刻面121、第二被蝕刻面131、複數第一金屬柱122的外周面123與複數第二金屬柱132的外周面133進行表面粗化處理,使第一被蝕刻面121、第二被蝕刻面131、複數第一金屬柱122的外周面123與複數第二金屬柱132的外周面133表面粗糙而易於與封裝體2穩定結合,但此步驟非必要步驟,其可視實際情況保留或省略。Furthermore, before encapsulating the first
第五、如圖12之步驟i、圖17所示,對第一金屬板體12與第二金屬板體13進行去除處理,以令每一第一金屬柱122與每一第二金屬柱132在另一端具有裸露且齊平於封裝體2的頂面21與底面22的二端面14’。藉此,製作出預成型導電柱結構10之第三實施例。Fifth, as shown in step i of Figure 12 and Figure 17, the first
其中,本實施例之每一端面14’為一平面,但不以此為限制,每一端面14’也可受蝕刻而形成由外周緣至中心點逐漸凹陷的一凹弧面。Each end surface 14' of this embodiment is a flat surface, but this is not a limitation. Each end surface 14' can also be etched to form a concave arc surface that is gradually depressed from the outer periphery to the center point.
如圖17所示,係本發明預成型導電柱結構10之第三實施例,詳細說明如下,封裝體2包覆在複數導電柱1的外部,封裝體2具有頂面21及底面22,每一導電柱1的一端裸露且齊平於頂面21及另一端裸露且齊平於底面22。As shown in Figure 17, it is the third embodiment of the preformed
另外,封裝體2設有複數貫穿孔23,每一導電柱1包含嵌固於各貫穿孔23且上、下相疊焊接的一第一金屬柱122及一第二金屬柱132,第一金屬柱122與第二金屬柱132在相互遠離的兩端具有裸露且齊平於頂面21與底面22的二端面14’,因第一金屬柱122與第二金屬柱132被蝕刻成型,所以每一第一金屬柱122自兩端朝中間逐漸縮減外周緣尺寸,每一第二金屬柱132自兩端朝中間逐漸縮減外周緣尺寸。藉此,以達到相同於預成型導電柱結構10第一實施例及其製作方法之功效。In addition, the
再者,本實施例利用第一金屬柱122與第二金屬柱132上、下相疊焊接,進而增加導電柱1的長度,使預成型導電柱結構10具有可延長導電柱1長度之功能。Furthermore, in this embodiment, the
請參考圖13至圖16、圖18至圖20所示,係本發明預成型導電柱結構第四實施例及其製作方法,進一步說明如下。Please refer to FIGS. 13 to 16 and 18 to 20 , which are the fourth embodiment of the preformed conductive pillar structure of the present invention and its manufacturing method. Further description is as follows.
本發明預成型導電柱結構第四實施例的製作方法之步驟e至h,與預成型導電柱結構第三實施例之步驟e至h相同,預成型導電柱結構第三、四實施例的製作方法不同之處在於步驟h之後的步驟不同。The steps e to h of the manufacturing method of the fourth embodiment of the preformed conductive pillar structure of the present invention are the same as the steps e to h of the third embodiment of the preformed conductive pillar structure. The manufacturing method of the third and fourth embodiments of the preformed conductive pillar structure The method differs in the steps after step h.
先經過圖18之步驟e(如圖13所示)、步驟f(如圖14至圖15所示)、步驟g(如圖14至圖16所示)、步驟h(如圖16所示)之後,再如圖18之步驟j、圖19至圖20所示,對第一金屬板體12與第二金屬板體13進行蝕刻處理,以令每一第一金屬柱122與每一第二金屬柱132在另一端延伸有裸露且突出於封裝體2的頂面21與底面22的二延伸柱15’。藉此,製作出預成型導電柱結構10之第四實施例。First go through step e (shown in Figure 13), step f (shown in Figure 14 to Figure 15), step g (shown in Figure 14 to Figure 16), and step h (shown in Figure 16) of Figure 18 Afterwards, as shown in step j of FIG. 18 and FIGS. 19 to 20 , the first
其中,本實施例之每一延伸柱15’的末端面為一平面,但不以此為限制,每一延伸柱15’的末端面也可受蝕刻而形成由外周緣至中心點逐漸凹陷的一凹弧面。Among them, the end surface of each extension column 15' in this embodiment is a plane, but this is not a limitation. The end surface of each extension column 15' can also be etched to form a gradually concave shape from the outer periphery to the center point. A concave arc surface.
如圖10至圖11所示,係本發明預成型導電柱結構10之第四實施例,詳細說明如下,封裝體2包覆在複數導電柱1的外部,封裝體2具有頂面21及底面22,每一導電柱1的一端裸露且突出於頂面21及另一端裸露且突出於底面22。As shown in Figures 10 and 11, it is the fourth embodiment of the preformed
另外,封裝體2設有複數貫穿孔23,每一導電柱1包含嵌固於各貫穿孔23且上、下相疊焊接的一第一金屬柱122及一第二金屬柱132,第一金屬柱122與第二金屬柱132在相互遠離的兩端延伸有裸露且突出於頂面21與底面22的二延伸柱15’,因第一金屬柱122及第二金屬柱132先被蝕刻成型,延伸柱15’再被蝕刻成型,所以每一第一金屬柱122自兩端朝中間逐漸縮減外周緣尺寸,每一第二金屬柱132自兩端朝中間逐漸縮減外周緣尺寸,每一延伸柱15’自兩端朝中間逐漸縮減外周緣尺寸。藉此,以達到相同於預成型導電柱結構10第三實施例及其製作方法之功效。In addition, the
再者,本實施例利用第一金屬柱122與第二金屬柱132上、下相疊焊接,蝕刻第一金屬板體12與第二金屬板體13而在第一金屬柱122與第二金屬柱132的兩端延伸有二延伸柱15,進而增加導電柱1的長度,使預成型導電柱結構10具有可延長導電柱1長度之功能。Furthermore, in this embodiment, the
請參考圖13至圖16、圖21至圖22所示,係本發明預成型導電柱結構第五實施例及其製作方法,進一步說明如下。Please refer to FIGS. 13 to 16 and 21 to 22 , which are the fifth embodiment of the preformed conductive pillar structure of the present invention and its manufacturing method. Further description is as follows.
本發明預成型導電柱結構第五實施例的製作方法之步驟e至h,與預成型導電柱結構第三實施例之步驟e至h相同,預成型導電柱結構第三、五實施例的製作方法不同之處在於步驟h之後的步驟不同。The steps e to h of the manufacturing method of the fifth embodiment of the preformed conductive pillar structure of the present invention are the same as the steps e to h of the third embodiment of the preformed conductive pillar structure. The manufacturing method of the third and fifth embodiments of the preformed conductive pillar structure The method differs in the steps after step h.
先經過圖21之步驟e(如圖13所示)、步驟f(如圖14至圖15所示)、步驟g(如圖14至圖16所示)、步驟h(如圖16所示)之後,再如圖21之步驟k、圖22所示,對第一金屬板體12與第二金屬板體13之其一者進行去除處理及另一者進行蝕刻處理,以令每一第一金屬柱122與每一第二金屬柱132在另一端具有裸露且齊平於封裝體2的頂面21與底面22之其一者的一端面14’及裸露且突出於封裝體2的頂面21與底面22之另一者的一延伸柱15’。藉此,製作出預成型導電柱結構10之第五實施例。First go through step e (shown in Figure 13), step f (shown in Figure 14 to Figure 15), step g (shown in Figure 14 to Figure 16), and step h (shown in Figure 16) of Figure 21 Afterwards, as shown in step k of FIG. 21 and FIG. 22 , one of the first
其中,本實施例之每一端面14’受蝕刻而形成由外周緣至中心點逐漸凹陷的一凹弧面,但不以此為限制,每一端面14’也可為一平面;每一延伸柱15’的末端面受蝕刻而形成由外周緣至中心點逐漸凹陷的一凹弧面,但不以此為限制,每一延伸柱15’的末端面也可為一平面。Each end surface 14' of this embodiment is etched to form a concave arc surface that is gradually depressed from the outer periphery to the center point. However, this is not a limitation. Each end surface 14' can also be a plane; each extension The end surface of the column 15' is etched to form a concave arc surface that is gradually depressed from the outer periphery to the center point. However, this is not a limitation. The end surface of each extended column 15' can also be a flat surface.
如圖22所示,係本發明預成型導電柱結構10之第五實施例,詳細說明如下,封裝體2包覆在複數導電柱1的外部,封裝體2具有頂面21及底面22,每一導電柱1的一端裸露且齊平於頂面21與底面22之其一者及另一端裸露且突出於頂面21與底面22之另一者。As shown in Figure 22, it is the fifth embodiment of the preformed
另外,封裝體2設有複數貫穿孔23,每一導電柱1包含嵌固於各貫穿孔23且上、下相疊焊接的一第一金屬柱122及一第二金屬柱132,第一金屬柱122與第二金屬柱132在相互遠離的一端具有裸露且齊平於頂面21與底面22之其一者的一端面14’及另一端具有裸露且突出於頂面21與底面22之另一者的一延伸柱15’,因第一金屬柱122及第二金屬柱132先被蝕刻成型,延伸柱15’再被蝕刻成型,所以每一第一金屬柱122自兩端朝中間逐漸縮減外周緣尺寸,每一第二金屬柱132自兩端朝中間逐漸縮減外周緣尺寸,每一延伸柱15’自兩端朝中間逐漸縮減外周緣尺寸。藉此,以達到相同於預成型導電柱結構10第三實施例及其製作方法之功效。In addition, the
再者,本實施例利用第一金屬柱122與第二金屬柱132上、下相疊焊接,蝕刻第一金屬板體12或第二金屬板體13而在第一金屬柱122或第二金屬柱132的一端延伸有一延伸柱15’,進而增加導電柱1的長度,使預成型導電柱結構10具有可延長導電柱1長度之功能。Furthermore, in this embodiment, the
如圖23所示,係本發明預成型導電柱結構10之第六實施例,預成型導電柱結構10之第六實施例與預成型導電柱結構10之第二實施例大致相同,預成型導電柱結構10之第六實施例與預成型導電柱結構10之第二實施例不同之處,進一步說明如下。As shown in Figure 23, it is the sixth embodiment of the preformed
透過對金屬板體11之不同部分進行不同參數的蝕刻處理,以令其一部分金屬柱112在另一端延伸有裸露且突出於封裝體2的底面22的一延伸柱15,另一部分金屬柱112在另一端具有裸露且齊平於封裝體2的底面22的一端面14。藉此,讓端面14與延伸柱15的位置配合晶片設置,以加強本發明預成型導電柱結構10與晶片接鏈之能力。By etching different parts of the
同理,再參考圖19至圖20、圖22所示,也可透過對第一金屬板體12或第二金屬板體13之不同部分進行不同參數的蝕刻處理,以令第一金屬柱122在另一端具有裸露且齊平於封裝體2的頂面21的端面14’或突出於封裝體2的頂面21的延伸柱15’,第二金屬柱132在另一端具有裸露且齊平於封裝體2的底面22的端面14’或突出於封裝體2的底面22的延伸柱15’。藉此,讓端面14’或延伸柱15’的位置配合晶片設置,以加強本發明預成型導電柱結構10與晶片接鏈之能力。Similarly, referring to FIGS. 19 to 20 and 22 , different parts of the first
綜上所述,本發明之預成型導電柱結構及其製作方法,亦未曾見於同類產品及公開使用,並具有產業利用性、新穎性與進步性,完全符合專利申請要件,爰依專利法提出申請,敬請詳查並賜准本案專利,以保障發明人之權利。To sum up, the preformed conductive pillar structure and its manufacturing method of the present invention have never been seen in similar products and are publicly used. It is industrially applicable, novel and progressive, and fully meets the patent application requirements. It is proposed in accordance with the patent law. To apply, please check carefully and grant the patent in this case to protect the rights of the inventor.
〈習知〉
a1:導電架
a2:板體
a3:導電柱
b1:晶片
b2:電極部
c:封裝體
〈本發明〉
10:預成型導電柱結構
1:導電柱
11:金屬板體
111:被蝕刻面
112:金屬柱
113:外周面
12:第一金屬板體
121:第一被蝕刻面
122:第一金屬柱
123:外周面
13:第二金屬板體
131:第二被蝕刻面
132:第二金屬柱
133:外周面
14、14’:端面
15、15’:延伸柱
2:封裝體
21:頂面
22:底面
23:貫穿孔
a~k:步驟
〈Knowledge〉
a1: conductive frame
a2: plate body
a3: conductive pillar
b1:wafer
b2:Electrode part
c: package
<The present invention>
10: Preformed conductive pillar structure
1: Conductive pillar
11:Metal plate body
111: Etched surface
112:Metal pillar
113: Outer peripheral surface
12: First metal plate body
121: The first etched surface
122:The first metal pillar
123:Outer peripheral surface
13: Second metal plate body
131: The second etched surface
132:Second metal pillar
133:Outer
圖1 係習知單晶封裝之組合剖面圖。Figure 1 is an assembled cross-sectional view of a conventional single crystal package.
圖2 係本發明預成型導電柱結構的第一種製作方法之步驟流程圖。Figure 2 is a step flow chart of the first manufacturing method of the preformed conductive pillar structure of the present invention.
圖3 係本發明金屬板體形成有被蝕刻面及複數金屬柱之立體圖。Figure 3 is a perspective view of the metal plate body of the present invention formed with an etched surface and a plurality of metal pillars.
圖4 係本發明金屬板體形成有被蝕刻面及複數金屬柱之剖面圖。Figure 4 is a cross-sectional view of the metal plate body of the present invention formed with an etched surface and a plurality of metal pillars.
圖5 係本發明封裝體結合於金屬板體上之立體圖。Figure 5 is a perspective view of the package of the present invention combined with a metal plate.
圖6 係本發明封裝體結合於金屬板體上之剖面圖。Figure 6 is a cross-sectional view of the package of the present invention combined with a metal plate.
圖7 係本發明預成型導電柱結構第一實施例之立體圖。Figure 7 is a perspective view of the first embodiment of the preformed conductive pillar structure of the present invention.
圖8 係本發明預成型導電柱結構第一實施例之剖面圖。Figure 8 is a cross-sectional view of the first embodiment of the preformed conductive pillar structure of the present invention.
圖9 係本發明預成型導電柱結構的第二種製作方法之步驟流程圖。Figure 9 is a step flow chart of the second manufacturing method of the preformed conductive pillar structure of the present invention.
圖10 係本發明預成型導電柱結構第二實施例之立體圖。Figure 10 is a perspective view of the second embodiment of the preformed conductive pillar structure of the present invention.
圖11 係本發明預成型導電柱結構第二實施例之剖面圖。Figure 11 is a cross-sectional view of the second embodiment of the preformed conductive pillar structure of the present invention.
圖12 係本發明預成型導電柱結構的第三種製作方法之步驟流程圖。Figure 12 is a step flow chart of the third manufacturing method of the preformed conductive pillar structure of the present invention.
圖13 係本發明第一金屬板體形成有第一被蝕刻面及複數第一金屬柱之立體圖。Figure 13 is a perspective view of the first metal plate body of the present invention formed with a first etched surface and a plurality of first metal pillars.
圖14 係本發明各第一金屬柱的一端與各第二金屬柱的一端焊接之立體圖。Figure 14 is a perspective view of one end of each first metal pillar and one end of each second metal pillar welded according to the present invention.
圖15 係本發明各第一金屬柱的一端與各第二金屬柱的一端焊接之剖面圖。Figure 15 is a cross-sectional view of one end of each first metal pillar and one end of each second metal pillar welded according to the present invention.
圖16 係本發明封裝體結合於第一金屬板體與第二金屬板體之間之剖面圖。Figure 16 is a cross-sectional view of the package of the present invention combined between the first metal plate body and the second metal plate body.
圖17 係本發明預成型導電柱結構第三實施例之剖面圖。Figure 17 is a cross-sectional view of the third embodiment of the preformed conductive pillar structure of the present invention.
圖18 係本發明預成型導電柱結構的第四種製作方法之步驟流程圖。Figure 18 is a step flow chart of the fourth manufacturing method of the preformed conductive pillar structure of the present invention.
圖19 係本發明預成型導電柱結構第四實施例之立體圖。Figure 19 is a perspective view of the fourth embodiment of the preformed conductive pillar structure of the present invention.
圖20 係本發明預成型導電柱結構第四實施例之剖面圖。Figure 20 is a cross-sectional view of the fourth embodiment of the preformed conductive pillar structure of the present invention.
圖21 係本發明預成型導電柱結構的第五種製作方法之步驟流程圖。Figure 21 is a step flow chart of the fifth manufacturing method of the preformed conductive pillar structure of the present invention.
圖22 係本發明預成型導電柱結構第五實施例之剖面圖。Figure 22 is a cross-sectional view of the fifth embodiment of the preformed conductive pillar structure of the present invention.
圖23 係本發明預成型導電柱結構第六實施例之立體圖。Figure 23 is a perspective view of the sixth embodiment of the preformed conductive pillar structure of the present invention.
10:預成型導電柱結構 10: Preformed conductive pillar structure
14:端面 14:End face
2:封裝體 2:Package
21:頂面 21:Top surface
23:貫穿孔 23:Through hole
Claims (16)
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TW111107756A TWI807665B (en) | 2022-03-03 | 2022-03-03 | Preformed conductive pillar structure and method of manufacturing the same |
CN202310038345.5A CN116705735A (en) | 2022-03-03 | 2023-01-09 | Preformed conductive column structure and manufacturing method thereof |
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