TW202336904A - Substrate processing apparatus - Google Patents
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- TW202336904A TW202336904A TW112108169A TW112108169A TW202336904A TW 202336904 A TW202336904 A TW 202336904A TW 112108169 A TW112108169 A TW 112108169A TW 112108169 A TW112108169 A TW 112108169A TW 202336904 A TW202336904 A TW 202336904A
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- waste liquid
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- 238000012545 processing Methods 0.000 title claims abstract description 118
- 239000000758 substrate Substances 0.000 title claims abstract description 76
- 239000007788 liquid Substances 0.000 claims abstract description 199
- 239000002699 waste material Substances 0.000 claims abstract description 144
- 239000003085 diluting agent Substances 0.000 claims abstract description 56
- 238000010248 power generation Methods 0.000 claims abstract description 53
- 238000010438 heat treatment Methods 0.000 claims abstract description 52
- 230000005611 electricity Effects 0.000 claims abstract description 18
- 238000001816 cooling Methods 0.000 claims description 20
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 230000020169 heat generation Effects 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 238000009835 boiling Methods 0.000 claims description 2
- 238000010790 dilution Methods 0.000 description 18
- 239000012895 dilution Substances 0.000 description 18
- 239000000243 solution Substances 0.000 description 7
- 238000007599 discharging Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000002826 coolant Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000000110 cooling liquid Substances 0.000 description 4
- 238000007865 diluting Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000008155 medical solution Substances 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
- H02N11/002—Generators
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
本發明是有關於一種基板處理裝置。The present invention relates to a substrate processing device.
在製造半導體或顯示器等的製造製程中，為了對半導體晶圓、光罩用玻璃基板、顯示器用玻璃基板等基板進行各種處理，使用基板處理裝置。In the manufacturing process of manufacturing semiconductors, displays, etc., substrate processing apparatuses are used to perform various processes on substrates such as semiconductor wafers, photomask glass substrates, and display glass substrates.
作為此種基板處理裝置，如專利文獻1所示，提出了使用硫酸及過氧化氫水的混合液（硫酸過氧化氫混合物（Sulfuric acid hydrogen Peroxide Mixture，SPM））等藥液從基板的表面將抗蝕劑去除的裝置。所述基板處理裝置藉由將加熱至100℃～160℃左右的SPM供給至基板而將抗蝕劑去除。另外，還記載了使用加熱裝置進一步對供給至基板的SPM進行加熱。用於去除抗蝕劑的SPM在基板處理裝置上所設置的緩衝罐內進行冷卻、稀釋後，作為廢液由工廠方面回收、廢棄。As such a substrate processing apparatus, as shown in Patent Document 1, it is proposed to use a chemical solution such as a mixture of sulfuric acid and hydrogen peroxide (Sulfuric acid hydrogen Peroxide Mixture (SPM)) to remove the substrate from the surface of the substrate. Apparatus for resist removal. The substrate processing apparatus removes the resist by supplying SPM heated to approximately 100° C. to 160° C. to the substrate. It is also described that the SPM supplied to the substrate is further heated using a heating device. The SPM used to remove the resist is cooled and diluted in a buffer tank installed on the substrate processing equipment, and then is recovered and discarded as waste liquid by the factory.
且說，近年來，就可持續發展目標（Sustainable Development Goals，SDGs）或企業社會責任（Corporate Social Responsibility，CSR）的觀點而言，期望以可再生能源製造製品，因此需要省電化。在半導體元件等的製造中，也使用大量的電力，因此，包括製造中的省電化等在內，期待對環境的對策。In addition, in recent years, from the viewpoint of Sustainable Development Goals (SDGs) or Corporate Social Responsibility (CSR), products are expected to be manufactured with renewable energy, and therefore there is a need to save electricity. A large amount of electric power is also used in the manufacturing of semiconductor elements and the like. Therefore, environmental measures including power saving during manufacturing are expected.
此處，在基板處理裝置中，使用多種多樣的藥液，除了再利用的情況以外，均稀釋後加以廢棄。因此，例如，對於如上所述用於去除抗蝕劑的SPM等處理液，也正在研究並非進行冷卻、稀釋而成為廢液，而是回收用於對SPM進行加熱的電力並進行再利用。Here, in the substrate processing apparatus, a variety of chemical solutions are used, and except for reuse, they are all diluted and discarded. Therefore, for example, for processing liquids such as SPM used for removing resists as described above, research is being conducted on recovering and reusing the electric power used to heat the SPM, instead of cooling and diluting the liquid to become a waste liquid.
另外，如專利文獻2所示，提出了藉由利用從處理槽排出的藥液（廢液）將新液升溫而實現能量的有效利用的方法。在所述方法中，即使在比新液的處理溫度低的溫度的廢液溫度（與處理溫度大致相同）下進行熱交換，也無法僅藉由熱交換使新液升溫至處理溫度，因此藉由在廢液中添加輔助液體，產生稀釋熱、反應熱或者中和熱等，進一步提高熱交換前的廢液的溫度，僅藉由熱交換器將新液升溫至處理溫度。由此，不需要用於對新液升溫的電力。 [現有技術文獻] [專利文獻] In addition, as shown in Patent Document 2, a method is proposed in which a chemical solution (waste liquid) discharged from a treatment tank is used to raise the temperature of a new solution to realize effective use of energy. In this method, even if heat exchange is performed at a temperature of the waste liquid that is lower than the processing temperature of the new liquid (approximately the same as the processing temperature), the temperature of the new liquid cannot be raised to the processing temperature by heat exchange alone. Therefore, the temperature of the new liquid cannot be raised to the processing temperature. By adding auxiliary liquid to the waste liquid, dilution heat, reaction heat or neutralization heat, etc. are generated to further increase the temperature of the waste liquid before heat exchange, and the new liquid is heated to the treatment temperature only by the heat exchanger. This eliminates the need for electric power for raising the temperature of the new liquid. [Prior art documents] [Patent Document]
[專利文獻1]日本專利特開2017-175166號公報 [專利文獻2]日本專利特開2006-66727號公報 [Patent Document 1] Japanese Patent Application Publication No. 2017-175166 [Patent Document 2] Japanese Patent Application Publication No. 2006-66727
[發明所要解決的問題] 然而，如上所述的方法適合於將多個基板浸漬於處理槽中所積存的藥液中而一併進行處理的所謂批次式處理裝置。即，在批次式處理裝置的情況下，雖然是斷續的，但每次處理結束時，一次向熱交換器供給大量的廢液。因此，批次式處理裝置由廢液充滿熱交換器內，而可效率良好地進行與新液的熱交換。[Problems to be Solved by the Invention] However, the method described above is suitable for a so-called batch processing apparatus in which a plurality of substrates are immersed in a chemical solution accumulated in a processing tank and processed together. That is, in the case of a batch type processing device, a large amount of waste liquid is supplied to the heat exchanger at one time each time the processing is completed, albeit intermittently. Therefore, the batch processing device fills the heat exchanger with the waste liquid and can efficiently exchange heat with the new liquid.
另一方面，存在向旋轉的基板供給處理液並逐片進行處理的所謂單片式處理裝置。單片式處理裝置與批次式處理裝置相比，可以高的水準使對各基板的處理的均勻性一致。因此，隨著近年來的電路圖案的微細化，單片式處理裝置被廣泛利用。但是，在此種單片式處理裝置中，廢液在處理過程中連續少量地流動，因此廢液的量不足以獲得新液與廢液的熱交換所產生的熱量。即，由少量的廢液使新液升溫的情況不適合作為有效利用能源的手段。On the other hand, there are so-called single-wafer processing apparatuses that supply a processing liquid to a rotating substrate and perform processing one by one. Compared with a batch-type processing device, a single-wafer processing device can achieve a higher level of uniformity in processing each substrate. Therefore, as circuit patterns have been miniaturized in recent years, single-chip processing devices have been widely used. However, in such a single-chip treatment device, the waste liquid continuously flows in a small amount during the treatment process, so the amount of waste liquid is not enough to obtain the heat generated by the heat exchange between the new liquid and the waste liquid. That is, raising the temperature of new liquid using a small amount of waste liquid is not suitable as a means of effectively utilizing energy.
另外，在使藥液與輔助液體混合的情況下，輔助液體擴散至藥液中需要一定程度的時間。因此，稀釋熱、反應熱或者中和熱等所引起的發熱並不急劇地發生，而是逐漸發生。在批次式的情況下，藉由將使用過的藥液（廢液）貯存於熱交換器中並與輔助液體混合，可確保達到足夠的溫度的時間。然而，在單片式的情況下，少量的廢液在廢液路徑中流動，因此難以確保與輔助液體混合的時間。In addition, when a medical solution and an auxiliary liquid are mixed, a certain amount of time is required for the auxiliary liquid to diffuse into the medical solution. Therefore, heat generation due to dilution heat, reaction heat, neutralization heat, etc. does not occur suddenly but occurs gradually. In the case of the batch type, by storing the used chemical liquid (waste liquid) in a heat exchanger and mixing it with the auxiliary liquid, the time to reach a sufficient temperature can be ensured. However, in the case of a single-chip type, a small amount of waste liquid flows in the waste liquid path, so it is difficult to ensure the time for mixing with the auxiliary liquid.
本發明的實施方式的目的在於提供一種在單片式處理裝置中使廢液效率良好地發熱而可效率良好地獲取電力的基板處理裝置。 [解決問題的技術手段] An object of embodiments of the present invention is to provide a substrate processing apparatus that efficiently generates heat from a waste liquid in a single-chip processing apparatus and can efficiently obtain electric power. [Technical means to solve problems]
本發明的實施方式的基板處理裝置具有：處理裝置，利用處理液逐片對基板進行處理；廢液流路，供對所述基板進行了處理的所述處理液的廢液流通；稀釋液供給部，向所述廢液供給稀釋液；發熱部，設置於所述廢液流路的多個部位，利用從所述稀釋液供給部供給的所述稀釋液使所述廢液發熱；以及發電部，利用所述發熱部的熱進行發電。 [發明的效果] The substrate processing apparatus according to the embodiment of the present invention includes: a processing device for processing substrates one by one using a processing liquid; a waste liquid flow path for circulating the waste liquid of the processing liquid that has processed the substrate; and a diluent supply. a part that supplies diluent to the waste liquid; a heating part that is provided at multiple locations in the waste liquid flow path and uses the diluent supplied from the diluent supply part to generate heat in the waste liquid; and generate electricity. part, and uses the heat of the heating part to generate electricity. [Effects of the invention]
藉由本發明的實施方式，可提供一種在單片式處理裝置中使廢液效率良好地發熱而可效率良好地獲取電力的基板處理裝置。According to the embodiments of the present invention, it is possible to provide a substrate processing apparatus that efficiently generates heat from waste liquid in a single-chip processing apparatus and can obtain electric power efficiently.
以下，參照附圖對本發明的實施方式進行說明。 [第一實施方式] [結構] 參照圖1對第一實施方式的基板處理裝置1進行說明。基板處理裝置1具有：處理裝置10、廢液流路20、稀釋液供給部30、發熱部40、發電部50、冷卻部60、蓄電裝置70、控制裝置80。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. [First Embodiment] [structure] The substrate processing apparatus 1 according to the first embodiment will be described with reference to FIG. 1 . The substrate processing apparatus 1 includes a processing device 10 , a waste liquid flow path 20 , a diluent supply unit 30 , a heat generating unit 40 , a power generation unit 50 , a cooling unit 60 , a power storage device 70 , and a control device 80 .
（處理裝置） 處理裝置10是逐片對基板W進行處理的單片式裝置。作為處理對象的基板W只要是例如半導體晶圓、光罩用玻璃基板、顯示器用玻璃基板等利用下述處理液L進行處理的對象，則可為任何基板。本實施方式的處理裝置10例如是藉由向旋轉的基板W供給處理液L而從基板W的表面將抗蝕劑去除的裝置。 (processing device) The processing device 10 is a single-chip device that processes the substrate W one by one. The substrate W to be processed may be any substrate as long as it is a target to be processed using the processing liquid L described below, such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a display, etc. The processing device 10 of this embodiment is a device that removes the resist from the surface of the substrate W by supplying the processing liquid L to the rotating substrate W, for example.
在本實施方式中，使用硫酸及過氧化氫水的混合液（SPM：Sulfuric acid hydrogen Peroxide Mixture）作為處理液L。但是，使用的處理液L並不限定於此，例如，可廣泛使用氫氟酸及硝酸的混合液、乙酸等酸系的液體。這些當被水稀釋時會發生反應而發熱。In this embodiment, a mixed liquid of sulfuric acid and hydrogen peroxide water (SPM: Sulfuric acid hydrogen Peroxide Mixture) is used as the treatment liquid L. However, the treatment liquid L used is not limited to this. For example, a mixed liquid of hydrofluoric acid and nitric acid, and an acid-based liquid such as acetic acid can be widely used. These react to produce heat when diluted with water.
處理裝置10具有：在作為容器的腔室10a中構成的旋轉部11、供給部12、回收部13。旋轉部11具有旋轉體11a、驅動源11c。旋轉體11a是藉由吸盤銷等保持部11b對基板W的邊緣進行保持並以與基板W的處理面正交的軸為中心而旋轉的旋轉台。驅動源11c為使旋轉體11a旋轉的馬達。The processing device 10 has a rotation part 11, a supply part 12, and a recovery part 13 which are comprised in the chamber 10a which is a container. The rotating part 11 has a rotating body 11a and a drive source 11c. The rotary body 11a is a turntable that holds the edge of the substrate W by a holding portion 11b such as a suction cup pin and rotates about an axis orthogonal to the processing surface of the substrate W. The drive source 11c is a motor that rotates the rotating body 11a.
供給部12具有噴嘴12a、臂12b。噴嘴12a為朝向旋轉的基板W的處理面噴出處理液L的噴出部。臂12b在前端設置有噴嘴12a，使噴嘴12a在旋轉體11a的中心上方與從旋轉體11a退避的位置之間擺動。噴嘴12a經由未圖示的供給配管供給來自處理液供給裝置的處理液L。The supply part 12 has a nozzle 12a and an arm 12b. The nozzle 12a is a discharge portion that discharges the processing liquid L toward the processing surface of the rotating substrate W. The arm 12b is provided with a nozzle 12a at its front end, and the nozzle 12a is swingable between a position above the center of the rotating body 11a and a position retreated from the rotating body 11a. The nozzle 12a supplies the processing liquid L from the processing liquid supply device via a supply pipe (not shown).
回收部13以包圍旋轉體11a的方式設置，且是將從基板W的處理面洩漏的處理液L從其底部回收的框體。在回收部13的底部及腔室10a的底部設置有開口10b，在所述開口10b連接有後述的廢液流路20。此外，此處，示出了選擇性地排出SPM的處理液L的開口10b。關於其他排出處理液L的開口及流路，省略了圖示。The recovery unit 13 is provided to surround the rotating body 11 a and is a frame that recovers the processing liquid L leaked from the processing surface of the substrate W from the bottom thereof. An opening 10b is provided at the bottom of the recovery part 13 and the bottom of the chamber 10a, and a waste liquid flow path 20 described below is connected to the opening 10b. In addition, here, the opening 10b for selectively discharging the processing liquid L of the SPM is shown. The other openings and flow paths for discharging the treatment liquid L are not shown in the drawings.
（廢液流路） 廢液流路20供對基板W進行了處理的處理液L的廢液Lw流通。廢液流路20為與腔室10a的開口10b連接的配管，且與工廠的回收路徑連接。在廢液流路20設置有用於對來自處理裝置10的廢液Lw的流量進行測定的流量計21。此外，本實施方式的基板處理裝置1具有多個所述處理裝置10，以能夠連續或者並行地對基板W進行處理。而且，多個處理裝置10中的腔室10a的開口10b與和共用的廢液流路20合流的配管連接。即，廢液流路20與多個處理裝置10連接。 (Waste liquid flow path) The waste liquid flow path 20 allows the waste liquid Lw of the processing liquid L that has processed the substrate W to circulate. The waste liquid flow path 20 is a pipe connected to the opening 10b of the chamber 10a, and is connected to the recovery path of the factory. The waste liquid flow path 20 is provided with a flow meter 21 for measuring the flow rate of the waste liquid Lw from the treatment device 10 . In addition, the substrate processing apparatus 1 of this embodiment includes a plurality of the above-mentioned processing apparatuses 10 so that the substrate W can be processed continuously or in parallel. Furthermore, the opening 10b of the chamber 10a in the plurality of processing devices 10 is connected to a pipe that merges with the common waste liquid flow path 20. That is, the waste liquid flow path 20 is connected to the plurality of processing devices 10 .
（稀釋液供給部） 稀釋液供給部30向廢液Lw供給稀釋液D。稀釋液供給部30具有稀釋流路31、質量流量控制器（Mass Flow Controller，MFC）32。稀釋流路31為與作為稀釋液D的水的供給源連接的配管。稀釋流路31空開間隔地與廢液流路20的多個部位連接。由此，稀釋流路31使稀釋液D流入至廢液流路20的廢液Lw。 (Diluent supply section) The diluent supply unit 30 supplies the diluent D to the waste liquid Lw. The diluent supply unit 30 has a dilution channel 31 and a mass flow controller (MFC) 32 . The dilution flow path 31 is a pipe connected to a supply source of water as the dilution liquid D. The dilution channel 31 is connected to a plurality of locations of the waste liquid channel 20 at intervals. Thereby, the diluent D flows into the waste liquid Lw of the waste liquid channel 20 in the dilution channel 31.
（發熱部） 發熱部40設置於廢液流路20的多個部位，利用供給至稀釋液供給部30的稀釋液D使廢液Lw發熱。發熱部40在廢液流路20串聯地配置有多個。發熱部40的配置位置成為廢液流路20中的連接有多個稀釋流路31的位置各自的下游。發熱部40設置有與廢液Lw稀釋至能夠廢棄的濃度相應的數量。從各處理裝置10排出廢液Lw的時機並非正好按照順序進行。例如，有時兩個排出廢液Lw的時機重疊或三個排出廢液Lw的時機重疊。因此，廢液流路20的流路直徑設定為，即使在所有的處理裝置10的廢液Lw被排出的時機重疊時，廢液Lw也無問題地在廢液流路20中流動。因此，需要即使在從所有的處理裝置10同時排出廢液Lw時也可充分進行稀釋的數量的發熱部40。發熱部40的數量可預先藉由實驗等求出。另外，本實施方式的發熱部40為線圈狀的流路。由此，發熱部40使得廢液Lw在發電部50的長度相應的距離中所滯留的時間變長，而可促進稀釋液D向廢液Lw的擴散。即，發熱部40可使廢液Lw與稀釋液D效率良好地反應而使廢液Lw發熱。例如，硫酸溶液的粘度比較高，因此稀釋液D向硫酸溶液中擴散時需要時間，但可確保所述時間。此外，在發熱部40為線圈狀的情況下，廢液Lw有可能在發熱部40內停滯。在此情況下，也可使得空氣或N 2氣體在發熱部40內流動，將廢液Lw擠出。 (Heat Generating Part) The heat generating part 40 is provided at a plurality of locations in the waste liquid flow path 20 , and uses the diluent D supplied to the diluent supply part 30 to generate heat in the waste liquid Lw. A plurality of heating units 40 are arranged in series in the waste liquid flow path 20 . The heat-generating part 40 is disposed downstream of each position in the waste liquid flow path 20 where the plurality of dilution flow paths 31 are connected. The number of heating units 40 corresponding to the concentration of the waste liquid Lw that can be diluted to enable it to be discarded is provided. The timing of discharging waste liquid Lw from each treatment device 10 is not exactly sequential. For example, two timings for discharging the waste liquid Lw may overlap, or three timings for discharging the waste liquid Lw may overlap. Therefore, the flow path diameter of the waste liquid channel 20 is set so that even when the timings at which the waste liquids Lw are discharged from all the processing devices 10 overlap, the waste liquid Lw flows through the waste liquid channel 20 without any problem. Therefore, a sufficient number of heating units 40 are required to allow sufficient dilution even when the waste liquid Lw is discharged from all the processing devices 10 at the same time. The number of heating parts 40 can be determined in advance through experiments or the like. In addition, the heating part 40 of this embodiment is a coil-shaped flow path. Thereby, the heating part 40 makes the waste liquid Lw stay in the distance corresponding to the length of the power generation part 50 longer, and can promote the diffusion of the diluent D into the waste liquid Lw. That is, the heat generating part 40 can efficiently react the waste liquid Lw and the diluent D to generate heat in the waste liquid Lw. For example, the viscosity of the sulfuric acid solution is relatively high, so it takes time for the diluent D to diffuse into the sulfuric acid solution, but the time can be ensured. In addition, when the heating part 40 is coil-shaped, waste liquid Lw may stagnate in the heating part 40. In this case, air or N 2 gas may be caused to flow in the heating part 40 to squeeze out the waste liquid Lw.
來自處理裝置10的廢液Lw藉由依次經過多個發熱部40，而被稀釋至能夠廢棄的狀態。在本實施方式中，從處理裝置10側即上游側向廢棄側即下游側設置有三個發熱部40。由此，在各發熱部40中，可將稀釋液D混合至廢液Lw中而發熱。The waste liquid Lw from the processing device 10 is diluted to a state capable of being discarded by sequentially passing through the plurality of heat generating parts 40 . In this embodiment, three heat generating parts 40 are provided from the upstream side, which is the processing device 10 side, to the downstream side, which is the waste side. Thereby, in each heating part 40, the diluent D can be mixed with the waste liquid Lw, and heat can be generated.
（發電部） 發電部50利用發熱部40的熱進行發電。作為發電部50，例如使用帕耳帖元件等發電元件。發電部50設置於發電元件的其中一個面與發熱部40相接的位置。即，發電部50為利用由發熱部40的發熱而產生的溫度差來發電的發電元件。 (Power generation department) The power generation unit 50 uses the heat of the heating unit 40 to generate electricity. As the power generation unit 50, a power generation element such as a Peltier element is used. The power generation part 50 is provided at a position where one surface of the power generation element is in contact with the heat generating part 40 . That is, the power generation unit 50 is a power generation element that generates electricity using the temperature difference generated by the heat generated by the heat generation unit 40 .
（冷卻部） 冷卻部60為供冷卻液C流通的配管。冷卻部60設置於與發電部50的發電元件的另一個面相接的位置。藉由利用冷卻部60對發電元件的另一個面進行冷卻，產生與經加熱的其中一個面的溫度差。冷卻部60與作為冷卻液C的水的供給源連接。此外，冷卻液C的溫度只要是可獲得與發熱的廢液Lw的溫度差的溫度即可，例如為常溫。 (cooling section) The cooling unit 60 is a pipe through which the coolant C flows. The cooling unit 60 is provided at a position in contact with the other surface of the power generation element of the power generation unit 50 . By cooling the other surface of the power generation element with the cooling unit 60 , a temperature difference is generated with the heated one surface. The cooling unit 60 is connected to a supply source of water as the cooling liquid C. In addition, the temperature of the coolant C may be a temperature that can obtain a temperature difference from the waste liquid Lw that generates heat, and may be, for example, normal temperature.
（蓄電裝置） 蓄電裝置70蓄積由發電部50產生的電力。蓄電裝置70可用作對處理液L進行加熱的加熱器的電源、或處理裝置10的驅動源11c的電源、工廠的照明或設備的電源、停電時的備用電源等各種電源。 (Electric storage device) Power storage device 70 stores electric power generated by power generation unit 50 . The power storage device 70 can be used as a power supply for a heater that heats the processing liquid L, a power supply for the drive source 11 c of the processing device 10 , a power supply for factory lighting or equipment, or a backup power supply in the event of a power outage.
（控制裝置） 控制裝置80對基板處理裝置1的各部進行控制。控制裝置80為了對基板處理裝置1的各部進行控制，而具有執行程式的處理器、儲存程式或動作條件等各種資訊的記憶體、對各構件進行驅動的驅動電路。控制裝置80可預先儲存處理液L的濃度。另外，控制裝置80可預先儲存發電部50的耐熱溫度。控制裝置80可根據追加至廢液Lw中的稀釋液D的量來運算廢液Lw的溫度上升至多少度。例如，控制裝置80基於由流量計21測定的廢液Lw的流量以利用MFC 32對稀釋液D的流量進行調整的方式進行控制，以使由稀釋液D稀釋的廢液Lw的溫度不超過發電部50的耐熱溫度。此外，雖然未圖示，但控制裝置80連接有輸入資訊的輸入部、輸出資訊的輸出部。 (control device) The control device 80 controls each component of the substrate processing apparatus 1 . In order to control each part of the substrate processing apparatus 1, the control device 80 has a processor that executes a program, a memory that stores various information such as programs and operating conditions, and a drive circuit that drives each component. The control device 80 may store the concentration of the treatment liquid L in advance. In addition, the control device 80 may store the heat-resistant temperature of the power generation unit 50 in advance. The control device 80 can calculate how much the temperature of the waste liquid Lw rises based on the amount of the diluent D added to the waste liquid Lw. For example, the control device 80 controls the flow rate of the diluting liquid D using the MFC 32 based on the flow rate of the waste liquid Lw measured by the flow meter 21 so that the temperature of the waste liquid Lw diluted with the diluting liquid D does not exceed the power generation temperature. The heat-resistant temperature of part 50. In addition, although not shown in the figure, the control device 80 is connected to an input unit for inputting information and an output unit for outputting information.
[動作] 對如上所述的本實施方式的動作進行說明。 （基板處理） 首先，對利用處理裝置10的基板處理進行說明。作為處理對象的基板W由搬送機器人搬入至旋轉體11a上，由保持部11b保持。藉由驅動源11c使旋轉體11a旋轉而基板W旋轉。藉由從噴嘴12a向基板W的處理面供給來自處理液供給裝置的處理液L，進行抗蝕劑去除處理。當經過規定的處理時間時，停止供給處理液L。其後，基板W停止旋轉，搬送機器人將由保持部11b進行的保持被釋放的基板W從腔室10a搬出。 [action] The operation of this embodiment as described above will be described. (Substrate processing) First, substrate processing using the processing apparatus 10 will be described. The substrate W to be processed is carried onto the rotating body 11a by a transfer robot, and is held by the holding portion 11b. The substrate W rotates as the rotating body 11a is rotated by the driving source 11c. The resist removal process is performed by supplying the processing liquid L from the processing liquid supply device from the nozzle 12 a to the processing surface of the substrate W. When the predetermined processing time elapses, the supply of the processing liquid L is stopped. Thereafter, the rotation of the substrate W stops, and the transfer robot carries out the substrate W from the chamber 10 a that has been released from holding by the holding unit 11 b.
（廢液發電） 接著，對利用來自處理裝置10的廢液Lw的發電進行說明。在處理裝置10中用於處理的處理液L從腔室10a的開口10b作為廢液Lw排出，並流入至廢液流路20。稀釋液D從多個部位的稀釋流路31流入至在廢液流路20中流動的廢液Lw。由此，在將廢液Lw與稀釋液D混合的狀態下，流入至各發熱部40。在通過發熱部40的過程中，藉由稀釋液D向廢液Lw擴散，反應進行而發熱。由此，各發電部50的發電元件的其中一個面被加熱，因此在發電元件的其中一個面與另一個面之間產生溫度差。由於在發電元件內部產生的溫度差，在發電元件內部產生電動勢。其結果，在各發電部50中進行發電。 (Waste liquid power generation) Next, power generation using the waste liquid Lw from the treatment device 10 will be described. The processing liquid L used for processing in the processing device 10 is discharged as waste liquid Lw from the opening 10b of the chamber 10a, and flows into the waste liquid flow path 20. The diluent D flows from the dilution channels 31 at a plurality of locations to the waste liquid Lw flowing in the waste liquid channel 20 . Thereby, the waste liquid Lw and the diluent D flow into each heat generating part 40 in a mixed state. While passing through the heat generating part 40, the diluent D diffuses into the waste liquid Lw, and the reaction proceeds to generate heat. As a result, one surface of the power generation element of each power generation unit 50 is heated, thereby causing a temperature difference between one surface and the other surface of the power generation element. Due to the temperature difference generated inside the power generation element, an electromotive force is generated inside the power generation element. As a result, power generation is performed in each power generation unit 50 .
另外，在冷卻部60中流通冷卻液C，對發電部50的發電元件的另一個面進行冷卻。因此，與空氣冷卻的情況相比，發電部50的發電元件中產生的溫度差變大，發電量變得更大。各發電部50的發電所產生的電力蓄積於蓄電裝置70中。In addition, the cooling liquid C flows through the cooling unit 60 to cool the other surface of the power generation element of the power generation unit 50 . Therefore, compared with the case of air cooling, the temperature difference generated in the power generation elements of the power generation unit 50 becomes larger, and the power generation amount becomes larger. The electric power generated by each power generation unit 50 is stored in the power storage device 70 .
此外，廢液Lw的流量由流量計21測量，與此相應，來自各稀釋流路31的稀釋液D的流量由MFC 32調整，廢液Lw被稀釋至能夠廢棄的濃度。例如，從上游側的發熱部40起依次稀釋為50%左右、30%左右、20%左右。由此，也可效率良好地產生廢液Lw的發熱。In addition, the flow rate of the waste liquid Lw is measured by the flow meter 21, and accordingly, the flow rate of the diluent D from each dilution channel 31 is adjusted by the MFC 32, so that the waste liquid Lw is diluted to a concentration that can be discarded. For example, it is diluted to approximately 50%, approximately 30%, and approximately 20% in order from the upstream heating part 40 . Thereby, heat generation of the waste liquid Lw can also be efficiently generated.
[效果] （1）本實施方式的基板處理裝置1具有：處理裝置10，利用處理液L逐片對基板W進行處理；廢液流路20，供對基板W進行了處理的處理液L的廢液Lw流通；稀釋液供給部30，向廢液Lw供給稀釋液D；發熱部40，設置於廢液流路20的多個部位，利用從稀釋液供給部30供給的稀釋液D使廢液Lw發熱；以及發電部50，利用由發熱部40產生的熱進行發電。 [Effect] (1) The substrate processing apparatus 1 of this embodiment includes: a processing device 10 for processing the substrate W one by one using a processing liquid L; and a waste liquid flow path 20 for supplying waste liquid Lw of the processing liquid L that has processed the substrate W. Circulation; the diluent supply part 30 supplies the diluent D to the waste liquid Lw; the heating part 40 is provided at multiple locations in the waste liquid flow path 20 and uses the diluent D supplied from the diluent supply part 30 to heat the waste liquid Lw. ; and a power generation unit 50 that uses the heat generated by the heating unit 40 to generate electricity.
因此，在單片式處理裝置10中，對於在處理過程中即使少量也連續流動的廢液Lw，可在多個部位階段性地混合稀釋液D並使其發熱。因此，可使廢液Lw效率良好地發熱而效率良好地獲取電力。另外，在此種發熱的過程中，可將廢液Lw稀釋至能夠廢棄的程度。Therefore, in the single-chip processing device 10, the diluent D can be mixed stepwise at a plurality of locations to generate heat for the waste liquid Lw that flows continuously even in a small amount during the treatment process. Therefore, the waste liquid Lw can be efficiently heated and electric power can be efficiently obtained. In addition, during this heat generation process, the waste liquid Lw can be diluted to a level that can be discarded.
（2）廢液Lw包含硫酸、磷酸、硝酸、氫氟酸中的至少一種，稀釋液D為水。因此，藉由利用用於廢棄的稀釋所使用的水使酸系的液體發熱，可以低成本獲取電力。(2) The waste liquid Lw contains at least one of sulfuric acid, phosphoric acid, nitric acid, and hydrofluoric acid, and the diluent D is water. Therefore, by using the water used for dilution for disposal to generate heat in the acid-based liquid, electricity can be obtained at low cost.
（3）發熱部40是線圈狀的流路。因此，可延長路徑長度，確保用於使稀釋液D擴散至廢液Lw的時間，可以比較小的空間效率良好地使熱傳遞至發電部50。此外，也可設為利用絕熱材料覆蓋發熱部40的周圍。藉由所述方式，由發熱部40產生的熱不易逃逸。在利用絕熱材料覆蓋發熱部40的情況下，較佳為發熱部40與發電部50接觸的部分不被絕熱材料覆蓋。(3) The heating part 40 is a coil-shaped flow path. Therefore, the path length can be lengthened, time for diffusing the diluent D to the waste liquid Lw can be ensured, and heat can be efficiently transferred to the power generation unit 50 in a relatively small space. In addition, the periphery of the heat generating part 40 may be covered with a heat insulating material. In this way, the heat generated by the heating part 40 cannot escape easily. When the heat-generating part 40 is covered with a heat-insulating material, it is preferable that the portion of the heat-generating part 40 that is in contact with the power-generating part 50 is not covered with the heat-insulating material.
（4）發電部50為利用由發熱部40的發熱產生的溫度差進行發電的發電元件。因此，可以簡單的結構進行發電，能夠實現低成本化、省空間化。進而，藉由冷卻部60可進一步增大與發熱部40的溫度差，因此可提高發電效率。(4) The power generation unit 50 is a power generation element that generates electricity using a temperature difference generated by the heat generated by the heating unit 40 . Therefore, it is possible to generate electricity with a simple structure, achieving low cost and space saving. Furthermore, the temperature difference between the cooling unit 60 and the heating unit 40 can be further increased, thereby improving the power generation efficiency.
（5）在廢液流路20連接有多個處理裝置10。因此，若在多個處理裝置10之間處理的開始產生偏移，則由處理裝置10的處理產生的廢液Lw的排出至廢液流路20的時機在多個處理裝置10之間產生偏移。由此，可使廢液Lw在廢液流路20中連續地流動的時間比較長，因此可長時間確保發熱及發電的時間。(5) A plurality of processing devices 10 are connected to the waste liquid flow path 20 . Therefore, if the start of processing varies among the plurality of processing devices 10 , the timing of discharging the waste liquid Lw generated by the processing of the processing device 10 to the waste liquid flow path 20 will vary among the plurality of processing devices 10 . shift. This allows the waste liquid Lw to continuously flow in the waste liquid flow path 20 for a relatively long time, so that the time for heat generation and power generation can be ensured for a long time.
（6）廢液Lw藉由依次經過多個發熱部40而被稀釋至能夠廢棄的狀態。由此，在各發熱部40中，將稀釋液D混合至廢液Lw中，因此可在各發熱部40中對廢液Lw的發熱量進行調整。藉由所述方式，可將在各發熱部40中被稀釋液D稀釋的廢液Lw的溫度調整為不超過各發電部50的耐熱溫度。另外，在廢液Lw被稀釋至能夠廢棄的濃度的期間，可將由廢液Lw產生的熱量效率良好地傳遞至發電部50。此外，也可設為在下游側的發熱部40中，利用溫度計等對在其內部流動的廢液Lw的溫度進行監控。或者，也可設為預先藉由實驗等對即將流入至下游側的發熱部40的內部之前的廢液Lw的溫度進行測定，並儲存於控制裝置80中。(6) The waste liquid Lw is diluted to a state that can be discarded by sequentially passing through the plurality of heat generating parts 40 . Thereby, in each heating part 40, the diluent D is mixed with the waste liquid Lw, and therefore the calorific value of the waste liquid Lw can be adjusted in each heating part 40. In this way, the temperature of the waste liquid Lw diluted with the diluent D in each heat generating unit 40 can be adjusted so as not to exceed the heat-resistant temperature of each power generating unit 50 . In addition, while the waste liquid Lw is diluted to a concentration that can be discarded, the heat generated from the waste liquid Lw can be efficiently transferred to the power generation unit 50 . In addition, the temperature of the waste liquid Lw flowing in the downstream heating unit 40 may be monitored using a thermometer or the like. Alternatively, the temperature of the waste liquid Lw immediately before flowing into the interior of the downstream heating part 40 may be measured in advance through experiments or the like, and may be stored in the control device 80 .
[第二實施方式] 接著，參照圖2對本發明的第二實施方式進行說明。本實施方式的基板處理裝置1基本上是與所述第一實施方式相同的結構。因此，對於圖2所示的與圖1相同的結構部，標注相同的符號並省略說明。 [Second Embodiment] Next, a second embodiment of the present invention will be described with reference to FIG. 2 . The substrate processing apparatus 1 of this embodiment basically has the same structure as that of the first embodiment. Therefore, the same structural parts shown in FIG. 2 as those shown in FIG. 1 are denoted by the same reference numerals and their descriptions are omitted.
但是，在本實施方式中，發熱部90為貯存廢液Lw的罐。罐設置於廢液流路20的多個部位，且是供廢液Lw流入並暫時貯存的具有規定的容積的容器。與所述發熱部40同樣地，發熱部90在廢液流路20串聯地配置有多個。發熱部90的配置位置成為廢液流路20中的連接有多個稀釋流路31的位置各自的下游。另外，在發熱部90的下游的位置設置有未圖示的閥。所述閥例如在發熱部90內的廢液Lw與稀釋液D的量超過一定量時打開。一定量例如為發熱部90的體積的8成左右。或者，在基板W為晶圓的情況下，一定量可設為對基板W進行了規定片數、例如13片處理時排出的廢液Lw及稀釋液D的量。發熱部90內的廢液Lw與稀釋液D的量是根據流量計21的測量值而算出。However, in this embodiment, the heat generating part 90 is a tank that stores the waste liquid Lw. The tank is installed at a plurality of locations in the waste liquid flow path 20 and is a container with a predetermined volume into which the waste liquid Lw flows and is temporarily stored. Like the heat-generating part 40 , a plurality of heat-generating parts 90 are arranged in series in the waste liquid flow path 20 . The heat generating part 90 is disposed downstream of each position in the waste liquid flow path 20 where the plurality of dilution flow paths 31 are connected. In addition, a valve (not shown) is provided downstream of the heat generating part 90 . For example, the valve is opened when the amounts of waste liquid Lw and diluent D in the heating part 90 exceed a certain amount. The certain amount is, for example, about 80% of the volume of the heating part 90 . Alternatively, when the substrate W is a wafer, the certain amount may be the amount of waste liquid Lw and diluent D discharged when a predetermined number of substrates W, for example, 13 pieces, are processed. The amounts of waste liquid Lw and diluent D in the heating part 90 are calculated based on the measurement values of the flow meter 21 .
另外，在基板處理裝置1不運轉的時間變長的情況下，與發熱部90內的廢液Lw和稀釋液D的量無關地打開閥。然後，廢液Lw從上游的發熱部90向下游的發熱部90排出。在下游的發熱部90中，向廢液Lw中加入規定的稀釋液D。然後，當供給稀釋液D後經過規定時間時，為了進一步向下游的發熱部90排出廢液Lw，打開未圖示的閥。如此，將廢液Lw排出至最後的發熱部90。基板處理裝置1不運轉的時間例如是根據來自前一製程的裝置的訊號而算出。In addition, when the non-operation time of the substrate processing apparatus 1 becomes longer, the valve is opened regardless of the amount of waste liquid Lw and diluent D in the heat generating part 90 . Then, the waste liquid Lw is discharged from the upstream heating part 90 to the downstream heating part 90 . In the downstream heating unit 90, a predetermined diluent D is added to the waste liquid Lw. Then, when a predetermined time elapses after the diluent D is supplied, a valve (not shown) is opened in order to further discharge the waste liquid Lw to the downstream heating unit 90 . In this way, the waste liquid Lw is discharged to the last heat generating part 90 . The time during which the substrate processing apparatus 1 is not operating is calculated, for example, based on a signal from the apparatus in the previous process.
另外，在與水平方向垂直的方向上，與位於下游側的發熱部90相比，位於上游側的發熱部90設置於更高的位置。藉由如此設置發熱部90，從發熱部90排出的廢液Lw可順利地流入至下游的發熱部90。In addition, in the direction perpendicular to the horizontal direction, the heat generating part 90 located on the upstream side is provided at a higher position than the heat generating part 90 located on the downstream side. By arranging the heating part 90 in this way, the waste liquid Lw discharged from the heating part 90 can smoothly flow into the downstream heating part 90 .
另外，也可在發熱部90的上表面周邊的側面設置排出側的流路。在此情況下，當液面上升至排出側的流路時，廢液Lw溢出而流向下一發熱部90。藉由所述方式，即使未圖示的閥發生故障也可繼續排出廢液Lw。廢液Lw溢出的時機與量是根據流量計21的測量值求出。基於這些值，可決定稀釋液D對流入至下一發熱部90的廢液Lw的供給時機。In addition, a discharge-side flow path may be provided on the side surface around the upper surface of the heat generating part 90 . In this case, when the liquid level rises to the flow path on the discharge side, the waste liquid Lw overflows and flows to the next heat generating part 90 . In this way, even if the valve (not shown) fails, the waste liquid Lw can continue to be discharged. The timing and amount of overflow of the waste liquid Lw are determined based on the measurement value of the flow meter 21 . Based on these values, the timing at which the diluent D is supplied to the waste liquid Lw flowing into the next heat generating part 90 can be determined.
流入至各發熱部90的廢液Lw與稀釋液D的混合液在貯存於罐內的期間藉由稀釋液D的擴散進行反應而發熱之後，排出至廢液流路20。由此，與第一實施方式同樣地，進行各發電部50的發電，並蓄電於蓄電裝置70中。The mixed liquid of the waste liquid Lw and the diluent D that flows into each heating unit 90 reacts by diffusion of the diluent D while being stored in the tank and generates heat, and then is discharged to the waste liquid flow path 20 . Thereby, similarly to the first embodiment, each power generation unit 50 generates electricity and stores the electricity in the power storage device 70 .
如此，在本實施方式中，在發熱部90的罐內，可確保使稀釋液D擴散至廢液Lw的時間，因此，與在配管內擴散的第一實施方式相比，可使反應進一步進行後流入至下一發熱部90。因此，可效率良好地利用廢液Lw的發熱，可提高發電效率。另外，稀釋位置較佳為設為發熱部90的罐下部。一般而言，稀釋液D與廢液Lw相比，比重輕。因此，藉由將稀釋位置設為發熱部90的罐下部，可使稀釋液D遍佈整個廢液Lw。即，可在整個發熱部90有效率地引起發熱反應。此外，也可利用絕熱材料覆蓋發熱部90的與發電部50接觸的部分以外的部分。In this way, in this embodiment, the time for the diluent D to diffuse into the waste liquid Lw can be ensured in the tank of the heating unit 90. Therefore, the reaction can be further advanced compared to the first embodiment in which the diluent D is diffused in the pipe. Then it flows into the next heating part 90 . Therefore, the heat generated by the waste liquid Lw can be efficiently utilized, and the power generation efficiency can be improved. In addition, the dilution position is preferably the lower part of the tank serving as the heating part 90 . Generally speaking, diluent D has a lighter specific gravity than waste liquid Lw. Therefore, by setting the dilution position to the lower part of the tank of the heating part 90, the diluent D can be spread throughout the entire waste liquid Lw. That is, the heat-generating reaction can be efficiently caused in the entire heat-generating part 90 . In addition, the heat-generating part 90 may be covered with a heat-insulating material other than the part in contact with the power-generating part 50 .
[變形例] 所述實施方式也能夠構成如下的變形例。 （1）線圈狀的發熱部40並不限定於筒狀的發熱部。例如，也可為捲繞成螺旋狀的形狀。另外，也可將發熱部40設為藉由設為流路蜿蜒的形狀來確保距離的形狀。 [Modification] The embodiment described above can also be configured as the following modifications. (1) The coil-shaped heating part 40 is not limited to a cylindrical heating part. For example, it may be spirally wound. In addition, the heat-generating part 40 may be formed into a shape in which the distance is ensured by having a meandering flow path.
（2）在冷卻部60中流通的冷卻液C也可以與稀釋液D共用的方式從共用的供給源供給。另外，作為冷卻部60的冷卻源，也可使用來自處理裝置10的不需要稀釋、且溫度比廢液Lw的溫度低的廢液。即，也可使用與所述廢液Lw區別地排出的液體作為冷卻液C。例如，也可使用鹼系的處理液作為冷卻液C。進而，也可不設置冷卻部60，而將發電部50的另一個面設為空氣冷卻。在此情況下，廢液Lw也會成為高溫，因此能夠根據與室溫的溫度差進行發電。(2) The cooling liquid C flowing through the cooling unit 60 may be supplied from a common supply source so as to be shared with the diluting liquid D. In addition, as the cooling source of the cooling unit 60, a waste liquid from the processing device 10 that does not require dilution and has a temperature lower than the temperature of the waste liquid Lw may be used. That is, a liquid discharged separately from the waste liquid Lw may be used as the cooling liquid C. For example, an alkali-based treatment liquid may be used as the coolant C. Furthermore, the cooling unit 60 may not be provided, and the other surface of the power generation unit 50 may be air-cooled. In this case, the waste liquid Lw also becomes high temperature, so it is possible to generate electricity based on the temperature difference from room temperature.
（3）作為發電部50，也可使用並非發電元件的發電裝置。例如，也可使用如下發電裝置：利用發熱部40、發熱部90對沸點比發熱部40、發熱部90的加熱溫度低的介質進行加熱而使其蒸發，並利用其蒸汽使渦輪旋轉而利用發電機進行發電。(3) As the power generation unit 50 , a power generation device other than a power generation element may be used. For example, a power generation device may be used that uses the heating parts 40 and 90 to heat and evaporate a medium with a boiling point lower than the heating temperature of the heating parts 40 and 90 , and uses the vapor to rotate a turbine to generate electricity. The motor generates electricity.
（4）發熱部40、發熱部90、發電部50的數量只要為多個即可，並不限定於所述形態中例示的數量。處理裝置10的數量也可為一個。(4) The number of the heat-generating parts 40 , 90 , and power-generating parts 50 may be a plurality, and is not limited to the numbers illustrated in the above-described embodiment. The number of processing devices 10 may also be one.
[其他實施方式] 以上，對本發明的實施方式及各部的變形例進行了說明，但所述實施方式或各部的變形例是作為一例來提示，並非意圖限定發明的範圍。所述這些新穎的實施方式能夠以其他各種形態加以實施，可在不脫離發明主旨的範圍內進行各種省略、置換、變更。這些實施方式或其變形包含在發明的範圍或主旨內，並且包含在申請專利範圍記載的發明中。 [Other embodiments] The embodiments and modifications of each part of the present invention have been described above. However, the embodiments and modifications of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments or modifications thereof are included in the scope or gist of the invention, and are included in the invention described in the claims.
1:基板處理裝置 10:處理裝置 10a:腔室 10b:開口 11:旋轉部 11a:旋轉體 11b:保持部 11c:驅動源 12:供給部 12a:噴嘴 12b:臂 13:回收部 20:廢液流路 21:流量計 30:稀釋液供給部 31:稀釋流路 32:質量流量控制器（Mass Flow Controller，MFC） 40:發熱部 50:發電部 60:冷卻部 70:蓄電裝置 80:控制裝置 90:發熱部 C:冷卻液 D:稀釋液 L:處理液 Lw:廢液 W:基板 1:Substrate processing device 10: Processing device 10a: Chamber 10b: Open your mouth 11:Rotation part 11a:Rotating body 11b: Maintenance Department 11c:Drive source 12: Supply Department 12a:Nozzle 12b: arm 13:Recycling Department 20:Waste liquid flow path 21:Flowmeter 30: Diluent supply department 31: Dilution flow path 32:Mass Flow Controller (MFC) 40: Heating part 50:Power generation department 60: Cooling department 70: Electric storage device 80:Control device 90: Heating part C: coolant D: diluent L: treatment liquid Lw: waste liquid W: substrate
圖1是表示第一實施方式的基板處理裝置的簡略結構圖。 圖2是表示第二實施方式的基板處理裝置的簡略結構圖。 FIG. 1 is a schematic structural diagram showing the substrate processing apparatus according to the first embodiment. FIG. 2 is a schematic structural diagram showing a substrate processing apparatus according to a second embodiment.
1:基板處理裝置 1:Substrate processing device
10:處理裝置 10: Processing device
10a:腔室 10a: Chamber
10b:開口 10b: Open your mouth
11:旋轉部 11:Rotation part
11a:旋轉體 11a:Rotating body
11b:保持部 11b: Maintenance Department
11c:驅動源 11c:Drive source
12:供給部 12: Supply Department
12a:噴嘴 12a:Nozzle
12b:臂 12b: arm
13:回收部 13:Recycling Department
20:廢液流路 20:Waste liquid flow path
21:流量計 21:Flow meter
30:稀釋液供給部 30: Diluent supply department
31:稀釋流路 31: Dilution flow path
32:質量流量控制器(Mass Flow Controller，MFC) 32:Mass Flow Controller (MFC)
40:發熱部 40: Heating part
50:發電部 50:Power generation department
60:冷卻部 60: Cooling department
70:蓄電裝置 70: Electric storage device
80:控制裝置 80:Control device
C:冷卻液 C: coolant
D:稀釋液 D: diluent
L:處理液 L: treatment liquid
Lw:廢液 Lw: waste liquid
W:基板 W: substrate
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| JP2022036573A JP7504940B2 (en) | 2022-03-09 | 2022-03-09 | Substrate Processing Equipment |
| JP2022-036573 | 2022-03-09 |
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| TW202336904A true TW202336904A (en) | 2023-09-16 |
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