TW202335195A - Package and method of manufacturing the same - Google Patents
Package and method of manufacturing the same Download PDFInfo
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- TW202335195A TW202335195A TW112117441A TW112117441A TW202335195A TW 202335195 A TW202335195 A TW 202335195A TW 112117441 A TW112117441 A TW 112117441A TW 112117441 A TW112117441 A TW 112117441A TW 202335195 A TW202335195 A TW 202335195A
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- layer
- metallization layer
- metallized
- ceramic
- package
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000001465 metallisation Methods 0.000 claims abstract description 161
- 239000000919 ceramic Substances 0.000 claims abstract description 94
- 238000007789 sealing Methods 0.000 claims abstract description 64
- 229910000679 solder Inorganic materials 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000007769 metal material Substances 0.000 claims abstract description 11
- 238000009713 electroplating Methods 0.000 claims description 42
- 238000001354 calcination Methods 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims 8
- 238000004806 packaging method and process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 14
- 238000005219 brazing Methods 0.000 abstract description 7
- 238000007747 plating Methods 0.000 description 16
- 229910045601 alloy Inorganic materials 0.000 description 15
- 239000000956 alloy Substances 0.000 description 15
- 239000004020 conductor Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 3
- 229910017709 Ni Co Inorganic materials 0.000 description 3
- 229910003267 Ni-Co Inorganic materials 0.000 description 3
- 229910003262 Ni‐Co Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
Abstract
Description
本發明係關於封裝體及其製造方法,特別係關於電子零件用的封裝體及其製造方法。The present invention relates to a package and a manufacturing method thereof, in particular to a package for electronic components and a manufacturing method thereof.
日本專利特開2000-312060號公報(專利文獻1),揭示用以搭載晶體振盪器等電子零件的電子零件搭載用基板。電子零件搭載用基板具有下部絕緣層及上部絕緣層。下部絕緣層具有用以將電子零件搭載於頂面的搭載部,且從此搭載部直至底面,包覆形成有用以將電子零件的電極連接至外部的複數金屬化導體層。上部絕緣層係框狀,以包圍搭載部的方式疊層於下部絕緣層上,且包覆形成有用以將蓋體接合至其頂面的密封用金屬化層。於上部絕緣層的外周面,形成有使此上部絕緣層上下貫通的缺口部。將使金屬化導體層與密封用金屬化層電連接的金屬化導體柱,以其上端面相對於上部絕緣層的頂面為同一面的方式,埋設於於此缺口部。Japanese Patent Application Laid-Open No. 2000-312060 (Patent Document 1) discloses an electronic component mounting substrate for mounting electronic components such as a crystal oscillator. The electronic component mounting substrate has a lower insulating layer and an upper insulating layer. The lower insulating layer has a mounting portion for mounting electronic components on the top surface, and is covered with a plurality of metallized conductor layers for connecting electrodes of the electronic components to the outside from the mounting portion to the bottom surface. The upper insulating layer is frame-shaped, laminated on the lower insulating layer to surround the mounting portion, and is covered with a sealing metallization layer for joining the cover to its top surface. A notch is formed on the outer peripheral surface of the upper insulating layer, allowing the upper insulating layer to penetrate vertically. The metallized conductor post that electrically connects the metallized conductor layer and the sealing metallized layer is buried in the notch so that its upper end surface is flush with the top surface of the upper insulating layer.
依據上述構成,密封用金屬化層經由金屬化導體柱而電連接於金屬化導體層。因此,藉由將金屬化導體層連接至接地電位,亦可使密封用金屬化層連接至接地電位。According to the above structure, the sealing metallized layer is electrically connected to the metallized conductor layer via the metallized conductor pillar. Therefore, by connecting the metallized conductor layer to ground potential, the sealing metallization layer can also be connected to ground potential.
又,上述公報中揭示:於金屬化導體層、密封用金屬化層及金屬化導體柱的露出表面,藉由電鍍法而包覆與焊料的可潤濕性優良的金屬例如金(Au)。再者,藉由此電鍍,可使透過焊料之密封用金屬化層和金屬蓋體的接合堅固。焊料例如係由金-錫(Au-Sn)合金構成。 [先前技術文獻] [專利文獻] Furthermore, the above-mentioned publication discloses that the exposed surfaces of the metallized conductor layer, the sealing metallized layer and the metallized conductor post are coated with a metal having excellent wettability with solder, such as gold (Au), by electroplating. Furthermore, by this electroplating, the sealing metallization layer and the metal cover can be firmly connected through the solder. The solder is made of gold-tin (Au-Sn) alloy, for example. [Prior technical literature] [Patent Document]
[專利文獻1]日本專利特開2000-312060號公報[Patent Document 1] Japanese Patent Application Laid-Open No. 2000-312060
[發明欲解決之課題][Problem to be solved by the invention]
依據上述公報所記載的技術,以覆蓋金屬化導體層、密封用金屬化層及金屬化導體柱的露出表面的方式,設置與焊料的可潤濕性優良的金屬層。藉此,如上所述,可使密封用金屬化層和屬蓋體之透過焊料的接合堅固。另一方面,由於覆蓋於與焊料的可潤濕性優良的金屬層,而使得焊料容易從位於頂面的密封用金屬化層上往位於側面的金屬化導體柱上,未有效利用地大量流出。特別是,焊料的金等昂貴材料的含有率大多為高,故於此情形時,焊料未有效利用地大量流出將使材料成本的顯著增加。According to the technology described in the above-mentioned publication, a metal layer excellent in wettability with solder is provided so as to cover the exposed surfaces of the metallized conductor layer, the sealing metallized layer, and the metallized conductor pillar. Thereby, as mentioned above, the connection between the sealing metallization layer and the cover body through the solder can be made strong. On the other hand, since it is covered with a metal layer that has excellent wettability with solder, it is easy for solder to flow out from the sealing metallized layer on the top surface to the metallized conductor pillars on the side, without effective use. . In particular, the content of expensive materials such as gold in solder is often high. Therefore, in this case, a large amount of solder flowing out without effective utilization will significantly increase the material cost.
本發明係為了解決如上課題而成,其目的在於提供一種封裝體及其製造方法,其可於確保頂面與底面間的電連接之同時,防止焊料從頂面往側面不必要地大量流。 [解決課題之手段] The present invention is made to solve the above problems, and its purpose is to provide a package and a manufacturing method thereof that can prevent unnecessary large amounts of solder from flowing from the top surface to the side while ensuring electrical connection between the top surface and the bottom surface. [Means to solve the problem]
一態樣的封裝體,係電子零件用,且使用焊料而裝設蓋體。封裝體具有陶瓷部、金屬化部及金屬層。陶瓷部於俯視觀察下具有外緣。陶瓷部具有頂面、與頂面相反的底面、及於俯視觀察下配置於外緣並使頂面與底面彼此連結之側面。頂面包含用以支持蓋體的密封面,且於密封面的內側設有用以收納電子零件的空腔。金屬化部設於陶瓷部上,且由金屬化材料所構成。金屬化部包含:密封金屬化層,設於密封面上;底面金屬化層,設於陶瓷部的底面上;及側面金屬化層,設於陶瓷部的側面上。側面金屬化層具有:上方部分,連結至密封金屬化層;下方部分,連結至底面金屬化層;及中間部分,使上方部分和下方部分彼此連結。金屬層,係由相較於金屬化材料對焊料的可潤濕性較高的金屬材料所構成。金屬層覆蓋金屬化部的密封金屬化層,而未覆蓋金屬化部的側面金屬化層的中間部分。A type of package for electronic components, with a cover installed using solder. The package body has a ceramic part, a metallized part and a metal layer. The ceramic part has an outer edge when viewed from above. The ceramic part has a top surface, a bottom surface opposite to the top surface, and a side surface arranged on the outer edge when viewed from above and connecting the top surface and the bottom surface to each other. The top surface includes a sealing surface for supporting the cover, and a cavity for storing electronic components is provided inside the sealing surface. The metallized part is provided on the ceramic part and is made of metallized material. The metallization part includes: a sealing metallization layer, located on the sealing surface; a bottom metallization layer, located on the bottom surface of the ceramic part; and a side metallization layer, located on the side of the ceramic part. The side metallization layer has an upper part connected to the sealing metallization layer; a lower part connected to the bottom metallization layer; and a middle part connecting the upper part and the lower part to each other. The metal layer is composed of a metal material that has higher wettability to solder than the metallized material. The metal layer covers the sealing metallization of the metallization, but does not cover the middle portion of the side metallization of the metallization.
又,構成上述金屬層的金屬材料,可為純金屬和合金的任一者。金屬層亦可覆蓋側面金屬化層的上方部分。金屬層亦可具有厚度逐漸變小的端部。於俯視觀察下,陶瓷部的外緣具有:第1角、第2角、及使第1角和第2角彼此連結的一邊,側面金屬化層亦可與第1角和第2角遠離而接於一邊。於側面金屬化層的中間部分,亦可設置由金屬化材料的氧化物所構成的表面氧化膜。側面金屬化層的中間部分的表面係斷裂面。外緣亦可包含配置有側面金屬化層的凹部。於配置有側面金屬化層的中間部分的高度範圍內,凹部可由側面金屬化層完全填埋。於配置有側面金屬化層的中間部分的高度範圍內,凹部可由側面金屬化層、及隔著側面金屬化層而面向陶瓷部且由陶瓷所構成的填充部完全填埋。In addition, the metal material constituting the metal layer may be either a pure metal or an alloy. The metal layer can also cover the upper portion of the side metallization layer. The metal layer may also have ends with gradually smaller thicknesses. When viewed from above, the outer edge of the ceramic part has: a first corner, a second corner, and a side connecting the first corner and the second corner to each other. The side metallization layer can also be separated from the first corner and the second corner. Connected to one side. A surface oxide film composed of an oxide of metallization material may also be provided in the middle part of the side metallization layer. The surface of the middle part of the side metallization layer is the fracture surface. The outer edge may also include recesses provided with side metallization layers. Within the height range of the middle portion provided with the side metallization layer, the recess can be completely filled by the side metallization layer. Within the height range of the middle portion where the side metallization layer is arranged, the recessed portion can be completely filled with the side metallization layer and a filling portion made of ceramic that faces the ceramic portion across the side metallization layer.
上述一態樣的封裝體的製造方法具備下述步驟:(a)形成生坯疊層體,該生坯疊層體具有:包含成為陶瓷部的部分之陶瓷生坯部、及包含成為金屬化部的部分之金屬化生坯部,其中,陶瓷生坯部及金屬化生坯部,各自橫跨於成為陶瓷部的外緣的至少一部分的假想線;(b)沿著假想線,於生坯疊層體形成渠溝;(c)藉由將生坯疊層體加以煅燒,形成包含陶瓷部及金屬化部的煅燒體;(d)為了形成金屬層,將煅燒體的金屬化部加以電鍍;及(e)於將金屬化部加以電鍍的步驟之後,以渠溝為起點使煅燒體產生裂縫,藉此一面使陶瓷部分斷,一面形成金屬化部的側面金屬化層的中間部分的表面。 [發明效果] The method for manufacturing a package in the above aspect includes the following steps: (a) forming a green laminate having a ceramic green portion including a portion to become a ceramic portion, and a portion including a metallized portion. A metallized green part that is a part of the ceramic part, wherein the ceramic green part and the metallized green part each cross an imaginary line that becomes at least part of the outer edge of the ceramic part; (b) along the imaginary line, on the green part The green laminate forms trenches; (c) By calcining the green laminate, a calcined body including a ceramic part and a metallized part is formed; (d) In order to form a metal layer, the metallized part of the calcined body is Electroplating; and (e) after the step of electroplating the metallized part, cracks are made in the calcined body starting from the trench, thereby breaking the ceramic part and forming the middle part of the side metallized layer of the metallized part. surface. [Effects of the invention]
依據上述一態樣的封裝體,第一,金屬化部包含:密封金屬化層,設於密封面上;底面金屬化層,設於陶瓷部的底面上;及側面金屬化層,設於陶瓷部的側面上。藉此,可確保配置有密封金屬化層的頂面和配置有底面金屬化層的底面之間的電連接。第二,由對熔融狀態中之焊料的可潤濕性高的金屬材料所構成的金屬層,即使於覆蓋金屬化部的密封金屬化層之同時,亦不會覆蓋金屬化部的側面金屬化層的中間部分。藉此,可防止焊料從頂面往側面不必要地大量流出。從以上可知,可於確保頂面和底面之間的電連接之同時,防止焊料從頂面往側面不必要地大量流出。According to the above aspect of the package, first, the metallization part includes: a sealing metallization layer provided on the sealing surface; a bottom surface metallization layer provided on the bottom surface of the ceramic part; and a side metallization layer provided on the ceramic part. on the side of the head. This ensures an electrical connection between the top surface provided with the sealing metallization layer and the bottom surface provided with the bottom surface metallization layer. Secondly, the metal layer composed of a metal material with high wettability to the solder in the molten state does not cover the side metallization of the metallized part while covering the sealing metallized layer of the metallized part. middle part of the layer. This prevents the solder from flowing out unnecessarily from the top surface to the sides. It can be seen from the above that while ensuring the electrical connection between the top surface and the bottom surface, the solder can be prevented from flowing out unnecessarily in large amounts from the top surface to the side.
此發明的目的、特徵、態樣及優點,藉由以下的詳細說明及附加圖式,可更為明白。The purpose, characteristics, aspects and advantages of this invention can be more clearly understood through the following detailed description and attached drawings.
以下,根據圖式說明實施形態。Hereinafter, embodiments will be described based on the drawings.
<實施形態1>
圖1係本實施形態1中之電子設備900的構成的概略俯視圖。圖2係沿著圖1之線II-II的概略部分剖面圖。電子設備900具有封裝體801、電子零件910、焊料930及蓋體920。
<
圖3係封裝體801的構成的概略俯視圖。圖4及圖5各自係沿著圖3之線IV-IV及線V-V的概略部分剖面圖。封裝體801係用於電子零件910,於本實施形態中,具有與電子零件910接合之電極墊400。如圖1及圖2所示,使用焊料930將蓋體920裝設於封裝體801。蓋體920宜由熱膨脹係數與陶瓷近似的金屬構成,具體而言,宜由以含有Fe(鐵)及Ni(鎳)作為主成分的合金構成,例如由Fe-Ni-Co(鈷)系合金或Fe-Ni系合金構成。焊料930以Au為主成分為佳,Au合金則更佳,典型而言為Au-Sn合金。又,焊料930的材料不限於此等,亦可為例如Ag(銀)-Cu(銅)合金、Pb(鉛)-Sn焊料、或無Pb焊料。蓋體的形狀亦可為平板狀。FIG. 3 is a schematic plan view of the structure of the
封裝體801具有陶瓷部100、設於陶瓷部100上的金屬化部200、及電鍍層300(金屬層)。金屬化部200包含密封金屬化層210、底面金屬化層220、及側面金屬化層230。電鍍層300具有上方電鍍層310及下方電鍍層320。上方電鍍層310與下方電鍍層320,係彼此分離。The
陶瓷部100由陶瓷構成,由例如氧化鋁或氮化鋁構成。於由氧化鋁所構成的陶瓷時,為了提高機械強度,亦可添加10~20wt%的二氧化鋯。如圖3所示,陶瓷部100於俯視觀察下,具有外緣EO。又,如圖4所示,陶瓷部100具有頂面P1、與頂面P1反向的底面P2、及將頂面P1和底面P2彼此連結的側面P3。側面P3於俯視觀察下,係配置於外緣EO(圖3)。外緣EO具有凹部CC。於本實施形態中,凹部CC係大約半圓形。頂面P1包含用以隔著金屬化部200及上方電鍍層310而支持蓋體920(圖2)之密封面SS。又,於頂面P1,設有用以將電子零件910收納於密封面SS的內側之空腔CV。陶瓷部100於俯視觀察下(圖3),具有包圍空腔CV之框部。又,於陶瓷部100,設有將空腔CV的內和外之間加以連結的內部配線(未圖示)。內部配線,例如使設於空腔CV內的電極墊400和設於底面P2上的電極墊(未圖示)彼此連接。The
金屬化部200由金屬化材料構成。金屬化材料的主成分,宜為高熔點金屬,例如,W(鎢)、Mo(鉬)、或此等金屬的混合材料。或者,金屬化材料的主成分,亦可為由W和Mo所構成的合金。密封金屬化層210係設於密封面SS上。底面金屬化層220係設於陶瓷部100的底面P2上。側面金屬化層230係設於陶瓷部100的側面P3上。具體而言,側面金屬化層230係配置於外緣EO的凹部CC。本實施形態中,於配置著側面金屬化層230的中間部分233的高度範圍內,凹部CC係由側面金屬化層230(圖4)所填滿。在此,上述「高度範圍」所言及的方向,係封裝體801的厚度方向(圖4中之縱方向)。側面金屬化層230具有:與密封金屬化層210連結的上方部分231、與底面金屬化層220連結的下方部分232、及使上方部分231和下方部分232彼此連結的中間部分233。側面金屬化層230的中間部分233的表面,非為煅燒面(as - fired surface),而係藉由後述分斷步驟所形成的斷裂面(fracture surface)SF(圖18)。The metallized portion 200 is composed of metallized material. The main component of the metallization material is preferably a high melting point metal, such as W (tungsten), Mo (molybdenum), or a mixture of these metals. Alternatively, the main component of the metallized material may be an alloy composed of W and Mo. The sealing metallization layer 210 is provided on the sealing surface SS. The bottom metallization layer 220 is provided on the bottom surface P2 of the
於俯視觀察下(圖3),陶瓷部100的外緣EO,係具有4個邊及4個角的長方形形狀。又,正方形係長方形的一種。具體而言,外緣EO具有:第1角N1(圖中之右上角)、第2角N2(圖中之右下角)、使第1角N1和第2角N2彼此連結的一邊(圖中之右邊)。側面金屬化層230,係與第1角N1及第2角N2遠離而接於一邊。與此對應,凹部CC,係與第1角N1及第2角N2遠離而接於一邊。又,本實施形態中,更有側面金屬化層230(及其所配置的凹部CC),係連接於與該一邊相反的邊,亦即圖中的左邊。又,1個封裝體所具有的側面金屬化層的數量(及凹部CC的數量)為任意。When viewed from above (Fig. 3), the outer edge EO of the
電鍍層300的上方電鍍層310,覆蓋金屬化部200的密封金屬化層210。另一方面,電鍍層300,則並未覆蓋金屬化部200的側面金屬化層230的中間部分233。本實施形態中,上方電鍍層310,覆蓋側面金屬化層230的上方部分231。上方部分231與上方電鍍層310的界面,亦可包含對厚度方向(圖4中之縱方向)的傾斜面。該界面亦可僅由該傾斜面構成。又,電鍍層300的下方電鍍層320,覆蓋金屬化部200的底面金屬化層220。又,電鍍層300的下方電鍍層320,覆蓋金屬化部200的側面金屬化層230的下方部分232。The electroplating layer 310 above the
電鍍層300的上方電鍍層310,具有厚度逐漸變小的端部(圖4中之右端部)。同樣地,電鍍層300的下方電鍍層320,具有厚度逐漸變小的端部(圖4中之右端部)。The electroplating layer 310 above the
相較於金屬化材料,電鍍層300係由對熔融狀態中之焊料930之可潤濕性高的金屬材料所構成。換言之,電鍍層300的金屬材料之該可潤濕性,高於金屬化材料的該可潤濕性。電鍍層300的金屬材料,宜以Au作為主成分,例如實質為Au。Compared with the metallized material, the
又,為了使電鍍層300不易剝離,宜於電鍍層300和金屬化部200之間,形成由與上述金屬材料不同的導體材料所構成之基底層(未圖示)。基底層亦可為電鍍層。基底層的材料,可以Ni作為主成分,例如,可為Ni或Ni-Co合金。In addition, in order to prevent the
圖5係未設有凹部CC處的部分剖面圖。Fig. 5 is a partial cross-sectional view of a place where no recessed portion CC is provided.
其次,針對將複數封裝體801總括製造的方法,參考圖6~圖18說明於下。又,圖6、圖8、圖10、圖12、圖14及圖16,分別係第1~第6步驟的概略部分俯視圖。又,圖7、圖9、圖11、圖13、圖15及圖17,分別係線VII-VII(圖6)、線IX-IX(圖8)、線XI-XI(圖10),線XIII-XIII(圖12),線XV-XV(圖14)及線XVII-XVII(圖16)的概略部分剖面圖。又,圖18係第7步驟的概略部分剖面圖。Next, a method of collectively manufacturing a plurality of
參考圖6及圖7,藉由將複數生坯片加以疊層,而形成陶瓷生坯部100G。陶瓷生坯部100G,包含藉由後述煅燒步驟而成為陶瓷部100(圖4)的部分。又,雖省略圖示,但於陶瓷生坯部100G,亦可設有成為陶瓷部100的內部配線(未圖示)的部分。Referring to FIGS. 6 and 7 , a ceramic
參考圖8及圖9,於陶瓷生坯部100G,形成沿著厚度方向延伸的貫通孔HL。貫通孔HL橫跨於成為陶瓷部100的外緣EO的至少一部分的假想線LV。貫通孔HL包含成為凹部CC(圖3)的部分。貫通孔HL,係藉由使用模具的機械加工而形成。又,作為變形例,貫通孔HL亦可藉由使用雷射光的加工而形成。Referring to FIGS. 8 and 9 , a through hole HL extending in the thickness direction is formed in the ceramic
參考圖10及圖11,藉由金屬膏的印刷,於陶瓷生坯部100G上,形成包含密封金屬化生坯層210G、底面金屬化生坯層220G及側面金屬化生坯層230G之金屬化生坯部200G。金屬化生坯部200G包含藉由後述煅燒步驟而成為金屬化部200的部分。具體而言,密封金屬化生坯層210G、底面金屬化生坯層220G及側面金屬化生坯層230G,各自包含藉由後述煅燒步驟而成為密封金屬化層210、底面金屬化層220及側面金屬化層230的部分。結果,形成生坯疊層體500G,該生坯疊層體500G具有:陶瓷生坯部100G,包含成為陶瓷部100的部分;及金屬化生坯部200G,包含成為金屬化部200的部分。Referring to Figures 10 and 11, metallization including a sealing metallized
陶瓷生坯部100G、及金屬化生坯部200G的側面金屬化生坯層230G,各自橫跨於成為陶瓷部100的外緣EO的至少一部分的假想線LV(圖10)。具體而言,陶瓷生坯部100G於貫通孔HL外橫跨於假想線LV。又,金屬化生坯部200G的側面金屬化生坯層230G,於貫通孔HL內橫跨於假想線LV。The ceramic
參考圖12及圖13,沿著假想線LV(圖10)於生坯疊層體500G形成渠溝TR。形成渠溝TR的步驟,係藉由沿著假想線LV使刀刃推壓於生坯疊層體500G而進行。又,作為變形例,形成渠溝TR的步驟,亦可藉由沿著假想線LV對生坯疊層體500G照射雷射光而進行。Referring to FIGS. 12 and 13 , a trench TR is formed in the
其次,將生坯疊層體500G(圖12及圖13)加以煅燒。參考圖14及圖15,藉由此煅燒,形成包含陶瓷部100及金屬化部200的煅燒體500。參考圖16及圖17,將煅燒體500的金屬化部200加以電鍍。藉此,形成電鍍層300。Next, the
參考圖18,於上述電鍍處理之後,以渠溝TR為起點使煅燒體500產生裂縫。藉此,一面使陶瓷部100分斷,一面形成金屬化部200的側面金屬化層230的中間部分233的表面(斷裂面SF)。藉由以上方式,而得到複數封裝體801。Referring to FIG. 18 , after the above electroplating process, cracks are generated in the
圖19係比較例中之電子設備990的構成的概略部分剖面圖。於本比較例中,與實施形態中之電子設備900(圖2)不同,於側面金屬化層230的側面整體,設有電鍍層390。結果,於使用焊料930而裝設蓋體920時,如圖中的箭頭所示,焊料930容易從頂面往側面不必要地大量流出。又,若追加用以使焊料930之如圖中箭頭所示的流動於中途停止的構件,則會使構成及製造方法複雜化。FIG. 19 is a schematic partial cross-sectional view of the structure of electronic device 990 in the comparative example. In this comparative example, unlike the electronic device 900 ( FIG. 2 ) in the embodiment, a plating layer 390 is provided on the entire side surface of the
又,雖省略圖示,但作為其他的比較例,可於與圖3類似之俯視觀察下,於陶瓷部100的框部,形成與外緣EO和空腔CV的任一者皆遠離的貫通孔,並於該貫通孔內,形成用以使頂面P1和底面P2電連接的導體構件。於此情形時,貫通孔的大小相較於框部的寬度必須為十分小。因此,於框部的寬度為小的情形時,形成貫通孔的處理難度高。例如,於使用具有微小插銷的模具的機械加工的情形時,與細微貫通孔對應的細微插銷容易彎折。而於使用雷射光以取代模具的情形時,生產性則大幅下降。再者,即使能形成細微貫通孔,於其中填充導體構件的處理的難度高。Although illustration is omitted, as another comparative example, in a plan view similar to that shown in FIG. 3 , a penetration can be formed in the frame of the
依據本實施形態的封裝體801,第一,金屬化部200(圖4)包含:密封金屬化層210,設於密封面SS上;底面金屬化層220,設於陶瓷部100的底面P2上;及側面金屬化層230,設於陶瓷部100的側面P3上。藉此,可確保配置有密封金屬化層210的頂面P1和配置有底面金屬化層220的底面P2之間的電連接。第二,由對熔融狀態中之焊料930(圖2)的可潤濕性高的金屬材料所構成的電鍍層300,雖然覆蓋金屬化部200的密封金屬化層210,但並不會覆蓋金屬化部200的側面金屬化層230的中間部分233。藉此,與比較例(圖19)不同,可防止焊料930從頂面往側面不必要地大量流出。據上,可確保頂面P1和底面P2之間的電連接,並防止焊料930從頂面往側面不必要地大量流出。According to the
上方電鍍層310(圖4)覆蓋側面金屬化層230的上方部分231。藉此,使焊料930(圖2)容易從密封金屬化層210的邊緣流出的範圍,局限於側面金屬化層230的上方部分231的範圍。因此,藉由使側面金屬化層230的上方部分231的尺寸十分小,可抑制焊料930流出的量。再者,藉由使焊料930從密封金屬化層210的邊緣稍微擴展,使焊料930更堅固地接合於電鍍層300。又,於側面金屬化層230的中間部分233的表面藉由煅燒步驟後的分斷步驟(圖18)形成,且界定該分斷步驟的位置的渠溝TR(圖12)於煅燒步驟前事先形成的情形時,電鍍層300的形成藉由煅燒步驟後且分斷步驟前的電鍍步驟(圖17)進行為有效率。於此情形時,電鍍層300中形成於渠溝TR內的部分,係對應於覆蓋側面金屬化層230的上方部分231的部分。因此,藉由容許電鍍層300覆蓋側面金屬化層230的上方部分231,可有效率地形成本實施形態中之電鍍層300。An upper plating layer 310 (Fig. 4) covers the upper portion 231 of the
上方電鍍層310,具有厚度逐漸變小的端部(圖4中之右端部)。藉此,可抑制端部中之電鍍層300的剝離。此外,當電鍍層300由昂貴的Au所構成時,則可削減原料費。又,於側面金屬化層230的中間部分233的表面藉由煅燒步驟後的分斷步驟(圖18)形成,且界定該分斷步驟的位置的渠溝TR(圖12)於煅燒步驟前事先形成的情形時,電鍍層300的形成藉由煅燒步驟後且分斷步驟前的電鍍步驟(圖17)進行為有效率。於此情形時,成為所完成的封裝體801所具有的電鍍層300的端部的部分,於電鍍步驟的時點位於渠溝TR的底部。由於在渠溝TR的底部電鍍逐漸難以進行,故電鍍層300具有厚度逐漸變小的端部。因此,藉由容許電鍍層300具有厚度逐漸變小的端部,可有效率地形成本實施形態中之電鍍層300。The upper electroplating layer 310 has an end portion (the right end portion in FIG. 4 ) with a gradually decreasing thickness. Thereby, peeling of the
針對陶瓷部100的外緣EO(圖3),側面金屬化層230係與第1角N1和第2角N2遠離而接於外緣EO的一邊。於外緣EO的角之容易發生側面金屬化層230的剝離之處,藉由該構成可抑制此剝離發生。特別是,與側面金屬化層230位於外緣EO的角的情形相比,可抑制用以形成陶瓷部100的外緣EO的分斷步驟(圖18)所造成之對側面金屬化層230的損傷。但是,於此效果非特別必要的情形時,亦即側面金屬化層230和陶瓷部100間的密接強度十分高的情形時,側面金屬化層230的配置不限於此,側面金屬化層230亦可配置於角。Regarding the outer edge EO of the ceramic part 100 ( FIG. 3 ), the
側面金屬化層230的中間部分233的表面係斷裂面SF(圖18)。藉此,可藉由分斷步驟形成該表面。The surface of the
側面金屬化層230,係配置於外緣EO(圖3)的凹部CC。藉此,可避免側面金屬化層230從陶瓷部100的外緣EO突出。The
於配置有側面金屬化層230的中間部分233(圖4)的高度範圍內,凹部CC(圖3)係由側面金屬化層230完全填埋。藉此,不必形成側面金屬化層230以外的構件,以作為完全填埋凹部CC的構件。又,藉由將凹部CC完全填埋,可避免接合蓋體920的區域因凹部CC而變小而產生密封不良。再者,因剛性變高,亦可防止以凹部CC為起點之包圍空腔CV的框部的破壞。此於陶瓷部100之包圍空腔CV的框部的寬度尺寸即使於與凹部CC遠離處亦僅有100μm以下的情形時有效。又,特別是於具有小至可包含於各邊為1mm的四方形區域程度的外緣EO之超小型封裝體中,設計上,大多要求將框部的寬度尺寸設為100μm以下。典型而言,於電子零件910(圖1)為(設有電極的)超小型水晶毛胚的情形時,會要求如此的超小型封裝體。Within the height range of the middle portion 233 ( FIG. 4 ) where the
依據本實施形態的封裝體801的製造方法,可以簡單方法製造封裝體801。具體而言,於分斷步驟所形成的斷裂面SF(圖18),係用作為抑制焊料930進一步流動的面。因此,不必形成用以抑制焊料930的流動的特別構件。又,貫通孔HL(圖8及圖9)因被分割而成為城堡形電極用的凹部CC(圖3)。因此,相較於與本實施形態不同而將與外緣EO和空腔CV的任一者皆遠離的貫通孔形成於陶瓷部100的框部以作為通孔電極用的情形,貫通孔HL的直徑可設為較大。因此,用以形成貫通孔HL的模具的插銷的直徑亦可設定為大。因此,貫通孔HL可藉由使用模具的機械加工而容易形成。藉此,相較於使用雷射加工的情形,可提高生產性。According to the manufacturing method of the
依據本實施形態的電子設備900的製造方法,首先,以如上方式製造封裝體801。其次,使電子零件910接合於封裝體801的電極墊400。接著,使用焊料930藉由硬焊接合(brazing)將蓋體920裝設至封裝體801。藉此,可得到電子設備900。硬焊接合可利用周知方法而進行,於此情形時,作為焊料930,典型係使用Au合金,特別是Au-Sn合金。但是,硬焊接合方法不限於此,例如,亦可以如下方式進行。首先,於蓋體920的一側的面上,形成由Ag-Cu合金所構成的焊料的層。其次,以焊料的層接觸於密封金屬化層210的方式,將設有焊料的層之蓋體920,載置於密封金屬化層210上。其次,藉由通電加熱,使焊料熔融。藉此,而得到電子設備900。According to the manufacturing method of the
又,電子設備900(圖2),如上所述,係使用設於底面P2上的電極墊(未圖示)而安裝於外部基板(未圖示)上。於此安裝中,電極墊係使用焊料而接合至外部基板。於此焊料接合中,假設若焊料從底面往側面不必要地流出,則於電極墊和外部基板間的接合容易變差。依據本實施形態,由對熔融狀態下之焊料的可潤濕性高的金屬材料所構成的電鍍層300,雖然覆蓋金屬化部200的底面金屬化層220,但並不會覆蓋金屬化部200的側面金屬化層230的中間部分233。藉此,可防止熔融狀態下的焊料從底面往側面不必要地流出。Furthermore, as described above, the electronic device 900 (FIG. 2) is mounted on the external substrate (not shown) using the electrode pads (not shown) provided on the bottom surface P2. In this installation, the electrode pads are bonded to the external substrate using solder. In this solder bonding, if the solder flows out unnecessarily from the bottom surface to the side surface, the bonding between the electrode pad and the external substrate is likely to deteriorate. According to this embodiment, although the
<實施形態2>
圖20係本實施形態2中之封裝體802的構成的概略俯視圖。圖21係沿著圖20之線XXI-XXI的概略部分剖面圖。於本實施形態中,於配置有側面金屬化層230的中間部分233的高度範圍內,凹部CC係由側面金屬化層230及填充部150完全填埋。填充部150隔著側面金屬化層230而面向陶瓷部100,且由陶瓷構成。填充部150的材料的主成分,宜與陶瓷部100的材料的主成分相同。例如,填充部150及陶瓷部100可皆由氧化鋁所構成,或者填充部150及陶瓷部100可皆由氮化鋁所構成。填充部150的表面,非煅燒面而係斷裂面SG。又,圖21所示的剖面,係沿著線XXI-XXI(圖20),而沿著線A-A(圖20)的部分剖面(未圖示),則與圖4(實施形態1)大致相同。
<Embodiment 2>
FIG. 20 is a schematic plan view of the structure of the
其次,於以下說明將複數封裝體802總括加以製造的方法。又,前述實施形態1中之第1及第2步驟(圖6~圖9),因於本實施形態中亦共用進行,故省略其說明。圖22、圖24、圖26、圖28、圖30及圖32,各自係第3~第8步驟的概略部分俯視圖。又,圖23、圖25、圖27、圖29、圖31及圖33,各自係沿著線XXIII-XXIII(圖22)、線XXV-XXV(圖24)、線XXVII-XXVII(圖26)、線XXIX-XXIX(圖28)、線XXXI-XXXI(圖30)及線XXXIII-XXXIII(圖32)的概略部分剖面圖。又,圖34係第9步驟的概略部分剖面圖。Next, a method of collectively manufacturing the plurality of
參考圖22及圖23,藉由金屬膏的印刷,以使貫通孔HL僅部分填充的方式,於陶瓷生坯部100G的貫通孔HL的內面上形成側面金屬化生坯層230G。其次,參考圖24及圖25,藉由陶瓷膏的印刷,以使貫通孔HL完全填埋的方式,隔著側面金屬化生坯層230G使填充生坯部150G填充至貫通孔HL。參考圖26及圖27,藉由金屬膏的印刷,於陶瓷生坯部100G上,形成密封金屬化生坯層210G和底面金屬化生坯層220G。以上,藉由圖22~圖27的步驟,於陶瓷生坯部100G上,形成包含成為金屬化部200的部分之金屬化生坯部200G。結果,形成生坯疊層體500G,該生坯疊層體500G具有:陶瓷生坯部100G,包含成為陶瓷部100的部分;金屬化生坯部200G,包含成為金屬化部200的部分;及填充生坯部150G,包含成為填充部150的部分。Referring to FIGS. 22 and 23 , a side metallized
陶瓷生坯部100G、金屬化生坯部200G的側面金屬化生坯層230G、及填充生坯部150G,各自橫跨於假想線LV(圖26)。具體而言,陶瓷生坯部100G於貫通孔HL外橫跨於假想線LV。又,側面金屬化生坯層230G及填充生坯部150G,各自於貫通孔HL內橫跨於假想線LV。The ceramic
參考圖28及圖29,沿著假想線LV(圖26),於生坯疊層體500G形成渠溝TR。形成渠溝TR的步驟,係藉由沿著假想線LV使刀刃推壓於生坯疊層體500G而進行。於渠溝TR係使用刀刃而形成時,如圖29所示,密封金屬化生坯層210G容易延伸至渠溝TR的側面上。此係因於形成渠溝TR時,密封金屬化生坯層210G捲入至刀刃所致。結果,於後述的電鍍步驟(圖32及圖33)中,於由陶瓷所構成的填充部150的表面上,亦容易形成電鍍層300。Referring to FIGS. 28 and 29 , a trench TR is formed in the
其次,將生坯疊層體500G(圖28及圖29)加以煅燒。參考圖30及圖31,利用此煅燒,形成包含陶瓷部100及金屬化部200的煅燒體500。Next, the green
參考圖32及圖33,將煅燒體500的金屬化部200加以電鍍。藉此,形成電鍍層300。Referring to FIGS. 32 and 33 , the metallized portion 200 of the
參考圖34,於上述電鍍之後,以渠溝TR為起點使於煅燒體500產生裂縫。藉此,一面使陶瓷部100及填充部150分斷(折斷),一面形成金屬化部200的側面金屬化層230的中間部分233的表面(圖20中之斷裂面SF)。藉由以上方式,得到複數封裝體802。Referring to FIG. 34 , after the above electroplating, cracks are generated in the
又,針對上述說明以外,因與上述實施形態1大致相同,故針對相同或對應的要件賦予相同符號,而不重複其說明。In addition, except for the above description, since it is substantially the same as the above-described
依據本實施形態的封裝體802,於配置有側面金屬化層230的中間部分233(圖21)的高度範圍內,凹部CC(圖20)係由側面金屬化層230、隔著側面金屬化層230而面向陶瓷部100且由陶瓷所構成的填充部150完全填埋。藉此,可藉由填充部150保護側面金屬化層230。又,因於包含成為凹部CC的部分的貫通孔HL內,形成由陶瓷所構成的填充部150(圖33),故構成框部的材料為陶瓷的比率變高使得均質性提高,故可使分斷步驟(圖34)中更穩定地產生凹部CC內的裂縫。According to the
依據本實施形態的封裝體802的製造方法,係使用刀刃而形成渠溝TR(圖29)。藉此,如上所述,密封金屬化生坯層210G容易延伸至渠溝TR的側面上。密封金屬化生坯層210G延伸至渠溝TR的側面上,結果使得封裝體802的密封金屬化層210亦延伸至渠溝TR的側面上。藉此,與圖4(實施形態1)的情形時相同,可於渠溝TR的側面上,得到具有厚度逐漸變小的端部的上方電鍍層310(圖21)。According to the manufacturing method of the
<實施形態2的變形例>
圖35係圖29的步驟的變形例的概略部分剖面圖。於圖29的步驟中係使用刀刃而形成渠溝TR,但於本變形例中,係藉由雷射加工(亦即,雷射光的照射)而形成渠溝TR。於此情形時,與圖29的情形不同,密封金屬化生坯層210G不易延伸至渠溝TR的側面上。依據本變形例,藉由使用雷射光來取代刀刃,可形成細微的渠溝TR。
<Modification of Embodiment 2>
FIG. 35 is a schematic partial cross-sectional view of a modified example of the procedure of FIG. 29 . In the step of FIG. 29 , the trench TR is formed using a blade, but in this modification, the trench TR is formed by laser processing (that is, irradiation of laser light). In this case, unlike the case of FIG. 29 , the sealing metallization
<實施形態3>
圖36係本實施形態3中之封裝體801M的構成的概略部分剖面圖。於本實施形態中,於側面金屬化層230的中間部分233,設有由金屬化材料的氧化物所構成的表面氧化膜233X。表面氧化膜233X可為中間部分233的自然氧化膜。又,針對此以外的構成,因與上述實施形態1(圖4)的構成大致相同,故針對相同或對應的要件賦予相同符號,而不重複其說明。
<Embodiment 3>
Fig. 36 is a schematic partial cross-sectional view of the structure of the package 801M in the third embodiment. In this embodiment, a
藉由本實施形態,亦可得到與實施形態1大致相同的效果。再者,依據本實施形態,可藉由表面氧化膜233X而使中間部分233對焊料930的可潤濕性更降低。特別是,於表面氧化膜233X為中間部分233的自然氧化膜的情形時,能容易形成表面氧化膜233X。According to this embodiment, substantially the same effect as that of
<實施形態4>
圖37係本實施形態4中之封裝體802M的構成的概略俯視圖。於本實施形態中,於側面金屬化層230的中間部分233,設有由金屬化材料的氧化物所構成的表面氧化膜233X。表面氧化膜233X,可為中間部分233的自然氧化膜。又,針對此以外的構成,因與上述實施形態2的構成大致相同,故針對相同或對應的要件賦予相同符號,而不重複其說明。
<Embodiment 4>
FIG. 37 is a schematic plan view of the structure of the
藉由本實施形態,亦可得到與實施形態2大致相同的效果。再者,依據本實施形態,亦可得到與上述實施形態3的特有效果相同的效果。According to this embodiment, substantially the same effect as that of Embodiment 2 can be obtained. Furthermore, according to this embodiment, the same effects as those unique to the above-mentioned Embodiment 3 can be obtained.
<實施形態5>
圖38係本實施形態5中之電子設備900M的構成在與圖2(電子設備900:實施形態1)對應的視野下的概略部分剖面圖。電子設備900M,除了電子設備900所具有的構件外,更具有金屬框體940。金屬框體940的形狀,於俯視觀察下,與密封金屬化層210的形狀大致相同。因此,金屬框體940於俯視觀察下包圍空腔CV。
<Embodiment 5>
FIG. 38 is a schematic partial cross-sectional view of the structure of the electronic device 900M in Embodiment 5 in the field of view corresponding to FIG. 2 (Electronic device 900: Embodiment 1). The electronic device 900M further has a metal frame 940 in addition to the components included in the
金屬框體940,宜由熱膨脹係數與陶瓷近似的金屬構成,具體而言,宜由以含有Fe(鐵)及Ni(鎳)作為主成分的合金構成,例如由Fe-Ni-Co(鈷)系合金或Fe-Ni系合金構成。The metal frame 940 is preferably made of a metal with a thermal expansion coefficient similar to that of ceramics. Specifically, it is preferably made of an alloy containing Fe (iron) and Ni (nickel) as main components, such as Fe-Ni-Co (cobalt). System alloy or Fe-Ni series alloy.
其次,說明電子設備900M的製造方法。首先,準備於前述實施形態1中所說明的封裝體801。其次,使用焊料930將金屬框體940裝設於封裝體801的密封金屬化層210。換言之,使金屬框體940硬焊接合於密封金屬化層210。硬焊接合的方法,亦可與前述實施形態1或其變形例中將蓋體920硬焊接合於密封金屬化層210的方法相同。特別是,於本實施形態中,焊料930的材料宜為Ag-Cu合金。其次,將蓋體920裝設於金屬框體940上。此裝設宜藉由硬焊接合進行。Next, the manufacturing method of the electronic device 900M will be described. First, the
於本實施形態中,蓋體920使用焊料930及硬焊接合於焊料930的金屬框體940而裝設於封裝體801。換言之,封裝體801,係使用焊料930及硬焊接合於焊料930的金屬框體940而裝設蓋體920而成的封裝體。因此,於本實施形態中,封裝體801的密封面SS,係用以隔著金屬框體940而支持蓋體920的密封面。In this embodiment, the
又,作為變形例,亦可將電子設備900M中之封裝體801,置換成封裝體801以外之前述實施形態1~4及其變形例的任一封裝體。Furthermore, as a modified example, the
上述實施形態及變形例,可彼此自由組合。此發明已詳細說明,但上述說明,於所有方面係為例示,此發明不受限於此。尚未例示的無數變形例,視為可於未超出此發明的範圍下而假設。The above-described embodiments and modifications can be freely combined with each other. The invention has been described in detail, but the above description is an illustration in all respects, and the invention is not limited thereto. Numerous modifications that have not been illustrated are considered conceivable without exceeding the scope of the invention.
100:陶瓷部
100G:陶瓷生坯部
150:填充部
150G:填充生坯部
200:金屬化部
200G:金屬化生坯部
210:密封金屬化層
210G:密封金屬化生坯層
220:底面金屬化層
220G:底面金屬化生坯層
230:側面金屬化層
230G:側面金屬化生坯層
231:上方部分
232:下方部分
233:中間部分
233X:表面氧化膜
300:電鍍層(金屬層)
310:上方電鍍層
320:下方電鍍層
390:電鍍層
400:電極墊
500:煅燒體
500G:生坯疊層體
801,801M,802,802M:封裝體
900,900M,990:電子設備
910:電子零件
920:蓋體
930:焊料
940:金屬框體
CC:凹部
CV:空腔
EO:外緣
HL:貫通孔
LV:假想線
N1,N2:第1及第2角
P1:頂面
P2:底面
P3:側面
SF:斷裂面
SG:斷裂面
SS:密封面
TR:渠溝
100:
【圖1】實施形態1中之電子設備的構成的概略俯視圖。
【圖2】沿著圖1之線II-II的概略部分剖面圖。
【圖3】實施形態1中之封裝體的構成概略俯視圖。
【圖4】沿著圖3之線IV-IV的概略部分剖面圖。
【圖5】沿著圖3之線V-V的概略部分剖面圖。
【圖6】實施形態1中之封裝體的製造方法的第1步驟的概略部分俯視圖。
【圖7】沿著圖6之線VII-VII的概略部分剖面圖。
【圖8】實施形態1中之封裝體的製造方法的第2步驟的概略部分俯視圖。
【圖9】沿著圖8之線IX-IX的概略部分剖面圖。
【圖10】實施形態1中之封裝體的製造方法的第3步驟的概略部分俯視圖。
【圖11】沿著圖10之線XI-XI的概略部分剖面圖。
【圖12】實施形態1中之封裝體的製造方法的第4步驟的概略部分俯視圖。
【圖13】沿著圖12之線XIII-XIII的概略部分剖面圖。
【圖14】實施形態1中之封裝體的製造方法的第5步驟的概略部分俯視圖。
【圖15】沿著圖14之線XV-XV的概略部分剖面圖。
【圖16】實施形態1中之封裝體的製造方法的第6步驟的概略部分俯視圖。
【圖17】沿著圖16之線XVII-XVII的概略部分剖面圖。
【圖18】實施形態1中之封裝體的製造方法的第7步驟的概略部分剖面圖。
【圖19】比較例中之電子設備的構成的概略部分剖面圖。
【圖20】實施形態2中之封裝體的構成的概略俯視圖。
【圖21】沿著圖20之線XXI-XXI的概略部分剖面圖。
【圖22】實施形態2中之封裝體的製造方法的第3步驟的概略部分俯視圖。
【圖23】沿著圖22之線XXIII-XXIII的概略部分剖面圖。
【圖24】實施形態2中之封裝體的製造方法的第4步驟的概略部分俯視圖。
【圖25】沿著圖24之線XXV-XXV的概略部分剖面圖。
【圖26】實施形態2中之封裝體的製造方法的第5步驟的概略部分俯視圖。
【圖27】沿著圖26之線XXVII-XXVII的概略部分剖面圖。
【圖28】實施形態2中之封裝體的製造方法的第6步驟的概略部分俯視圖。
【圖29】沿著圖28之線XXIX-XXIX的概略部分剖面圖。
【圖30】實施形態2中之封裝體的製造方法的第7步驟的概略部分俯視圖。
【圖31】沿著圖30之線XXXI-XXXI的概略部分剖面圖。
【圖32】實施形態2中之封裝體的製造方法的第8步驟的概略部分俯視圖。
【圖33】沿著圖32之線XXXIII-XXXIII的概略部分剖面圖。
【圖34】實施形態2中之封裝體的製造方法的第9步驟的概略部分剖面圖。
【圖35】實施形態2中之封裝體的製造方法的第6步驟(圖29)的變形例的概略部分剖面圖。
【圖36】實施形態3中之封裝體的構成的概略部分剖面圖。
【圖37】實施形態4中之封裝體的構成的概略俯視圖。
【圖38】實施形態5中之電子設備的構成在與圖2對應的視野下之概略部分剖面圖。
[Fig. 1] A schematic plan view of the structure of an electronic device in
900:電子設備 900: Electronic equipment
910:電子零件 910:Electronic parts
920:蓋體 920: Cover
930:焊料 930:Solder
CV:空腔 CV: cavity
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JP2020217028 | 2020-12-25 | ||
JP2020-217028 | 2020-12-25 | ||
JP2021-174728 | 2021-10-26 | ||
JP2021174728A JP2022103057A (en) | 2020-12-25 | 2021-10-26 | Package and manufacturing method thereof |
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TW202335195A true TW202335195A (en) | 2023-09-01 |
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Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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DE69613645T2 (en) * | 1995-03-02 | 2002-05-08 | Circuit Components Inc | COST-EFFECTIVE, HIGH-PERFORMANCE HOUSING FOR MICROWAVE CIRCUITS IN THE 90 GHZ RANGE WITH BGA IN / OUTPUT FORMAT AND CERAMIC SUBSTRATE TECHNOLOGY |
JPWO2004070836A1 (en) * | 2003-02-06 | 2006-06-01 | 株式会社Neomaxマテリアル | Hermetic sealing cap and manufacturing method thereof |
JP2004289470A (en) * | 2003-03-20 | 2004-10-14 | Kyocera Corp | Package for accommodating piezoelectric vibrator |
JP5388601B2 (en) * | 2008-10-28 | 2014-01-15 | 京セラ株式会社 | Electronic component storage package |
JP6314406B2 (en) * | 2013-10-03 | 2018-04-25 | 日立金属株式会社 | HERMETIC SEALING CAP, ELECTRONIC COMPONENT STORAGE PACKAGE, AND HERMETIC SEALING CAP MANUFACTURING METHOD |
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TWI806265B (en) | 2023-06-21 |
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